WO2010086745A1 - Method of etching lanthanum-containing oxide layers - Google Patents
Method of etching lanthanum-containing oxide layers Download PDFInfo
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- WO2010086745A1 WO2010086745A1 PCT/IB2010/000334 IB2010000334W WO2010086745A1 WO 2010086745 A1 WO2010086745 A1 WO 2010086745A1 IB 2010000334 W IB2010000334 W IB 2010000334W WO 2010086745 A1 WO2010086745 A1 WO 2010086745A1
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- alkyls
- aryl
- salt
- cpc
- active ingredient
- Prior art date
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- 238000005530 etching Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title claims description 27
- 229910052746 lanthanum Inorganic materials 0.000 title description 5
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 title description 3
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims abstract description 54
- 238000004377 microelectronic Methods 0.000 claims abstract description 22
- 229910052747 lanthanoid Inorganic materials 0.000 claims abstract description 20
- 150000002602 lanthanoids Chemical class 0.000 claims abstract description 19
- 150000004820 halides Chemical class 0.000 claims abstract description 18
- 150000003839 salts Chemical class 0.000 claims abstract description 18
- 239000004480 active ingredient Substances 0.000 claims abstract description 15
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000001257 hydrogen Substances 0.000 claims abstract description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 8
- 235000019270 ammonium chloride Nutrition 0.000 claims abstract description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract 7
- 239000000203 mixture Substances 0.000 claims description 36
- 125000000217 alkyl group Chemical group 0.000 claims description 13
- 125000003118 aryl group Chemical group 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- -1 fluoride ions Chemical class 0.000 claims description 6
- NHGXDBSUJJNIRV-UHFFFAOYSA-M tetrabutylammonium chloride Chemical compound [Cl-].CCCC[N+](CCCC)(CCCC)CCCC NHGXDBSUJJNIRV-UHFFFAOYSA-M 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- OKIZCWYLBDKLSU-UHFFFAOYSA-M N,N,N-Trimethylmethanaminium chloride Chemical compound [Cl-].C[N+](C)(C)C OKIZCWYLBDKLSU-UHFFFAOYSA-M 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- YMBCJWGVCUEGHA-UHFFFAOYSA-M tetraethylammonium chloride Chemical compound [Cl-].CC[N+](CC)(CC)CC YMBCJWGVCUEGHA-UHFFFAOYSA-M 0.000 claims description 2
- FBEVECUEMUUFKM-UHFFFAOYSA-M tetrapropylazanium;chloride Chemical compound [Cl-].CCC[N+](CCC)(CCC)CCC FBEVECUEMUUFKM-UHFFFAOYSA-M 0.000 claims description 2
- 239000012487 rinsing solution Substances 0.000 claims 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 abstract description 12
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 abstract description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 abstract description 6
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 5
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 abstract description 3
- 239000003795 chemical substances by application Substances 0.000 abstract description 3
- 239000000600 sorbitol Substances 0.000 abstract description 3
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 abstract description 2
- 239000000908 ammonium hydroxide Substances 0.000 abstract description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 abstract description 2
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 abstract 2
- 125000005915 C6-C14 aryl group Chemical group 0.000 abstract 2
- 238000009472 formulation Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- SLODBEHWNYQCRC-UHFFFAOYSA-N [La+3].[O-2].[Zr+4] Chemical compound [La+3].[O-2].[Zr+4] SLODBEHWNYQCRC-UHFFFAOYSA-N 0.000 description 1
- XBMVVNMBJZRKNO-UHFFFAOYSA-N [O--].[O--].[O--].[La+3].[Er+3] Chemical compound [O--].[O--].[O--].[La+3].[Er+3] XBMVVNMBJZRKNO-UHFFFAOYSA-N 0.000 description 1
- DBOSVWZVMLOAEU-UHFFFAOYSA-N [O-2].[Hf+4].[La+3] Chemical compound [O-2].[Hf+4].[La+3] DBOSVWZVMLOAEU-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012433 hydrogen halide Substances 0.000 description 1
- 229910000039 hydrogen halide Inorganic materials 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- KUJCXHVZKFFWJH-UHFFFAOYSA-N lanthanum(3+) lutetium(3+) oxygen(2-) Chemical compound [O--].[O--].[O--].[La+3].[Lu+3] KUJCXHVZKFFWJH-UHFFFAOYSA-N 0.000 description 1
- GJJSDZSDOYNJSW-UHFFFAOYSA-N lanthanum(3+);borate Chemical compound [La+3].[O-]B([O-])[O-] GJJSDZSDOYNJSW-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- IWZKICVEHNUQTL-UHFFFAOYSA-M potassium hydrogen phthalate Chemical compound [K+].OC(=O)C1=CC=CC=C1C([O-])=O IWZKICVEHNUQTL-UHFFFAOYSA-M 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000003134 recirculating effect Effects 0.000 description 1
- 239000008237 rinsing water Substances 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002594 sorbent Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
Definitions
- the present invention relates generally to methods of etching lanthanum-containing oxide layers.
- CMOS complementary metal-oxide-semiconductor
- Si/SiO2 Silicon/Silicon dioxide
- HKMG high-k/metal gate
- Current CMOS technology includes the use of HK+MG stacks on hafnium-based high-k including a capping layer such as lanthanum oxide as the nMOS cap between the high- k material and the metal stack. Subsequent to deposition of the lanthanum oxide, patterning is performed to define the nMOS device regions. An etchant material is needed to controllably and predictably remove lanthanum oxide during the manufacturing process of the HK + MG stacks.
- the present invention generally relates to a method of etching lanthanum oxide and other lanthanoid-containing oxides from a microelectronic device.
- the method removes excess lanthanum oxide and/or lanthanoid-containing oxide without damaging other materials present on the microelectronic device including, but not limited to, thermal oxide, polysilicon and the high-k material.
- "Microelectronic device” corresponds to semiconductor substrates, flat panel displays, phase change memory devices, solar panels and other products including solar substrates, photovoltaics, and microelectromechanical systems (MEMS), manufactured for use in microelectronic, integrated circuit, or computer chip applications.
- MEMS microelectromechanical systems
- microelectronic device “microelectronic substrate” and “microelectronic device structure” are not meant to be limiting in any way and include any substrate or structure that will eventually become a microelectronic device or microelectronic assembly.
- the microelectronic device can be patterned, blanketed, a control and/or a test device.
- a "rejected microelectronic device” structure is intended to capture all microelectronic devices that can be reclaimed, reworked, and/or cleaned according to the methods of the invention.
- substantially devoid is defined herein as less than 2 wt. %, preferably less than 1 wt. %, more preferably less than 0.5 wt. %, and most preferably less than 0.1 wt. %, based on the total weight of the composition.
- lanthanoid-containing oxide corresponds to oxides including at least one of the lanthanoid metals (previously known as the lanthanides) selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and any combination thereof.
- compositions may be embodied in a wide variety of specific formulations, as hereinafter more fully described.
- compositions wherein specific components of the composition are discussed in reference to weight percentage ranges including a zero lower limit, it will be understood that such components may be present or absent in various specific embodiments of the composition, and that in instances where such components are present, they may be present at concentrations as low as 1 ppm (part per million), based on the total weight of the composition in which such components are employed.
- a method of etching lanthanum oxide and/or other lanthanoid-containing oxides from a microelectronic device comprises contacting the lanthanum oxide or lanthanoid-containing oxide material with an etchant composition comprising, consisting of, or consisting essentially of a buffered halide system as the active ingredient.
- CpC 6 alkyls e.g., methyl, ethyl, propyl, butyl, pentyl, and hexyl
- C 6 -Ci 4 aryl e.g., benzyl
- the buffered halide system comprises, consists of or consists essentially of at least one [NR 1 R 2 R 3 R 4 J + Cl " salt, [NR 1 R 2 R 3 R 4 J + Br " salt, [NR 1 R 2 R 3 R 4 J + I " salt, or combinations thereof as the active ingredient, wherein R 1 , R 2 , R 3 and R 4 are described above.
- the buffered halide system comprises, consists of or consists essentially of at least one [NR 1 R 2 R 3 R 4 J + Cl " salt as the active ingredient, wherein R 1 , R 2 , R 3 and R 4 are described above.
- buffered chloride system salts include ammonium chloride, tetramethylammonium chloride, tetraethylammonium chloride, tetrapropylammonium chloride, and tetrabutylammonium chloride.
- a buffer such as potassium hydrogen phthalate in the presence of HCl may be considered.
- the pH of the buffered halide system is preferably in a range from about 3 to about 6, more preferably about 4 to about 6. The higher pH, the lower the etch rate of lanthanum oxide. In order to achieve the preferred pH, bases may be added for pH adjustment.
- a quaternary ammonium hydroxide such as tetramethylammonium hydroxide (TMAH) may be added.
- TMAH tetramethylammonium hydroxide
- the buffered halide systems and the etchant composition is substantially devoid of fluoride ions.
- the etchant composition further includes lanthanum oxide or lanthanoid-containing oxides subsequent to initiation of etching.
- the etchant composition may comprise, consist of or consist essentially of at least one buffered halide system as the active ingredient as defined above, and lanthanum oxide or lanthanoid- containing oxides.
- the lanthanum oxide or lanthanoid-containing oxides may be dissolved and/or suspended in the etchant composition.
- the buffered halide system is substantially devoid of fluoride ions.
- the etchant composition further includes at least one passivating agent selected from the group consisting of sorbitol, ethylene glycol, propylene glycol, glycerol, and PEG (MW in a range from about 122 to 2000).
- the passivating agent preferably further reduces the lanthanum oxide and/or lanthanoid-containing oxide etch rates.
- the cumulative amount of at least one [NR 1 R 2 R 3 R 4 J + X ' salt as the active ingredient is in a range from about 0.001 M to about 1 M, preferably about 0.005 M to about 0.5 M.
- an etchant composition having a certain molarity of [NR 1 R 2 R 3 R 4 J + X " salt dissolved therein, whether beginning with solid or liquid [NR 1 R 2 R 3 R 4 J + X " salt, a concentrated [NR 1 R 2 R 3 R 4 J + X " salt solution, or combining aqueous hydrogen halide acids with aqueous ammonia.
- the water is deionized.
- the etchant composition typically is contacted with the lanthanum oxide or lanthanoid-containing oxide for a time of from about 5 sec to about 10 min, preferably about 10 sec to about 180 sec, most preferably about 20 sec to about 90 sec, at temperature in a range of from about 5°C to about 60 0 C, preferably about room temperature.
- Such contacting times and temperatures are illustrative, and any other suitable time and temperature conditions may be employed that are efficacious to at least partially etch lanthanum oxide or lanthanoid- containing oxide.
- the method removes excess lanthanum-oxide and/or other lanthanoid-containing oxides without damaging other materials present on the microelectronic device including, but not limited to, thermal oxide, polysilicon, high-k material (e.g., hafnium-containing materials), and combinations thereof.
- an etching composition as described herein is contacted in any suitable manner to the microelectronic device having lanthanum oxide or lanthanoid- containing oxide thereon, e.g., by spraying an etchant composition on the surface of the device, by dipping (in a volume of an etchant composition) of the device including the lanthanum oxide or lanthanoid-containing oxide material, by contacting the device with another material, e.g., a pad, or fibrous sorbent applicator element, that has an etchant composition absorbed thereon, by contacting the device including the lanthanum oxide or lanthanoid-containing oxide with a spraying etchant, by contacting the device including the lanthanum oxide or lanthanoid-containing oxide with a recirculating etchant composition, or by any other suitable means, manner or technique, by which an etchant composition is brought into contact with the lanthanum oxide or lanthanoi
- the etchant composition may be readily removed from microelectronic device to which it has previously been applied using a rinse solution for time in a range from about 1 sec to about 60 sec, preferably about 10 sec to about 40 sec, wherein the rinse solution preferably comprises water, more preferably ultrapure water. Thereafter, the microelectronic device may be dried with nitrogen gas.
- Formulation D 0.2 M NH 4 Cl, adjusted to pH 6.08 with TMAH
- Formulation E 0. M NH 4 Cl, adjusted to pH 8.6 with TMAH
- Formulation F 90 vol% 0.1 M NH 4 Cl, 10.0 vol.% sorbitol
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
Lanthanum oxide or lanthanoid-containing oxides are etched from substrates intended for microelectronic devices using a buffered halide solution, the active ingredient preferably comprising, consisting or consisting essentially of a salt of the formula: [NR1R2R3R4]+X- wherein X = F, Cl, Br or I, and R1, R2, R3 and R4 may be the same or different from one another, and are selected from hydrogen, straight-chained C1-C6 alkyls, branched C1-C6 alkyls, substituted C6-C14 aryl, unsubstituted C6-C14 aryl, and combinations thereof. A fluoride-free active ingredient, e.g. ammonium chloride, is preferred. The pH is preferably in the range 3 to 6, and may be adjusted with a quaternary ammonium hydroxide such as tetramethylammonium hydroxide (TMAH). Contact times from about 5 seconds to about 10 minutes, at temperatures from about 5°C to about 60°C, are preferred. A passivating agent such as sorbitol, ethylene glycol, propylene glycol, glycerol or PEG may be used to reduce the etching rate.
Description
METHOD OF ETCHING LANTHANUM-CONTAINING OXIDE LAYERS
FIELD
[0001] The present invention relates generally to methods of etching lanthanum-containing oxide layers.
DESCRIPTION OF THE RELATED ART
[0002] As the semiconductor manufacturing industry pushes the limits of CMOS architecture to ever smaller physical dimensions, e.g., 45nm, 32 nm and 22 nm nodes, device makers are obliged to move away from common Silicon/Silicon dioxide (Si/SiO2) technology and integrate more new materials in the chips, such as high-k/metal gate (HKMG). [0003] Current CMOS technology includes the use of HK+MG stacks on hafnium-based high-k including a capping layer such as lanthanum oxide as the nMOS cap between the high- k material and the metal stack. Subsequent to deposition of the lanthanum oxide, patterning is performed to define the nMOS device regions. An etchant material is needed to controllably and predictably remove lanthanum oxide during the manufacturing process of the HK + MG stacks.
SUMMARY
DETAILED DESCRIPTION AND PREFERRED EMBODIMENTS THEREOF
[0004] The present invention generally relates to a method of etching lanthanum oxide and other lanthanoid-containing oxides from a microelectronic device. Preferably, the method removes excess lanthanum oxide and/or lanthanoid-containing oxide without damaging other materials present on the microelectronic device including, but not limited to, thermal oxide, polysilicon and the high-k material.
[0005] "Microelectronic device" corresponds to semiconductor substrates, flat panel displays, phase change memory devices, solar panels and other products including solar substrates, photovoltaics, and microelectromechanical systems (MEMS), manufactured for use in microelectronic, integrated circuit, or computer chip applications. It is to be understood that the terms "microelectronic device," "microelectronic substrate" and "microelectronic device structure" are not meant to be limiting in any way and include any substrate or structure that will eventually become a microelectronic device or microelectronic assembly. The microelectronic device can be patterned, blanketed, a control and/or a test device. A "rejected microelectronic device" structure is intended to capture all microelectronic devices that can be reclaimed, reworked, and/or cleaned according to the methods of the invention.
[0006] "Substantially devoid" is defined herein as less than 2 wt. %, preferably less than 1 wt. %, more preferably less than 0.5 wt. %, and most preferably less than 0.1 wt. %, based on the total weight of the composition.
[0007] As used herein, "about" is intended to correspond to ± 5 % of the stated value. [0008] As defined herein, "lanthanoid-containing oxide" corresponds to oxides including at least one of the lanthanoid metals (previously known as the lanthanides) selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and any combination thereof. Specific examples include, but are not limited to, lanthanum oxide, lanthanum silicate, lanthanum aluminate, lanthanum borate, lanthanum hafnium oxide, lanthanum zirconium oxide, lanthanum lutetium oxide, and lanthanum erbium oxide. [0009] Compositions may be embodied in a wide variety of specific formulations, as hereinafter more fully described.
[0010] In all such compositions, wherein specific components of the composition are discussed in reference to weight percentage ranges including a zero lower limit, it will be understood that such components may be present or absent in various specific embodiments of the composition, and that in instances where such components are present, they may be
present at concentrations as low as 1 ppm (part per million), based on the total weight of the composition in which such components are employed.
[0011] In general, a method of etching lanthanum oxide and/or other lanthanoid-containing oxides from a microelectronic device comprises contacting the lanthanum oxide or lanthanoid-containing oxide material with an etchant composition comprising, consisting of, or consisting essentially of a buffered halide system as the active ingredient. Preferably, the buffered halide system comprises, consists of or consists essentially of at least one [NR1R2R3R4J+X" salt as the active ingredient, wherein X = F, Cl, Br, and I, and R1, R2, R3 and R4 may be the same as or different from one another and are selected from the group consisting of hydrogen, straight chained or branched CpC6 alkyls (e.g., methyl, ethyl, propyl, butyl, pentyl, and hexyl) substituted or unsubstituted C6-Ci4 aryl (e.g., benzyl), and combinations thereof. More preferably, the buffered halide system comprises, consists of or consists essentially of at least one [NR1R2R3R4J+Cl" salt, [NR1R2R3R4J+Br" salt, [NR1R2R3R4J+I" salt, or combinations thereof as the active ingredient, wherein R1, R2, R3 and R4 are described above. Most preferably, the buffered halide system comprises, consists of or consists essentially of at least one [NR1R2R3R4J+Cl" salt as the active ingredient, wherein R1, R2, R3 and R4 are described above. Particularly preferred buffered chloride system salts include ammonium chloride, tetramethylammonium chloride, tetraethylammonium chloride, tetrapropylammonium chloride, and tetrabutylammonium chloride. In addition to the buffered halide system or as an alternative to the buffered halide system, a buffer such as potassium hydrogen phthalate in the presence of HCl may be considered. [0012] The pH of the buffered halide system is preferably in a range from about 3 to about 6, more preferably about 4 to about 6. The higher pH, the lower the etch rate of lanthanum oxide. In order to achieve the preferred pH, bases may be added for pH adjustment. For example, when the pH is required to be raised, a quaternary ammonium hydroxide such as tetramethylammonium hydroxide (TMAH) may be added.
[0013] In a particularly preferred embodiment, the buffered halide systems and the etchant composition is substantially devoid of fluoride ions.
[0014] In still another embodiment, the etchant composition further includes lanthanum oxide or lanthanoid-containing oxides subsequent to initiation of etching. For example, the etchant composition may comprise, consist of or consist essentially of at least one buffered halide system as the active ingredient as defined above, and lanthanum oxide or lanthanoid- containing oxides. The lanthanum oxide or lanthanoid-containing oxides may be dissolved and/or suspended in the etchant composition. Preferably, the buffered halide system is substantially devoid of fluoride ions.
[0015] In yet another embodiment, the etchant composition further includes at least one passivating agent selected from the group consisting of sorbitol, ethylene glycol, propylene glycol, glycerol, and PEG (MW in a range from about 122 to 2000). The passivating agent preferably further reduces the lanthanum oxide and/or lanthanoid-containing oxide etch rates. [0016] Because the etchant compositions are aqueous-based and acidic, there is no damage to photoresist that may be present on the microelectronic device.
[0017] Preferably, the cumulative amount of at least one [NR1R2R3R4J+X' salt as the active ingredient is in a range from about 0.001 M to about 1 M, preferably about 0.005 M to about 0.5 M. One skilled in the art would know how to make an etchant composition having a certain molarity of [NR1R2R3R4J+X" salt dissolved therein, whether beginning with solid or liquid [NR1R2R3R4J+X" salt, a concentrated [NR1R2R3R4J+X" salt solution, or combining aqueous hydrogen halide acids with aqueous ammonia. Preferably, the water is deionized. [0018] In use, the etchant composition typically is contacted with the lanthanum oxide or lanthanoid-containing oxide for a time of from about 5 sec to about 10 min, preferably about 10 sec to about 180 sec, most preferably about 20 sec to about 90 sec, at temperature in a range of from about 5°C to about 600C, preferably about room temperature. Such contacting times and temperatures are illustrative, and any other suitable time and temperature conditions may be employed that are efficacious to at least partially etch lanthanum oxide or lanthanoid-
containing oxide. Preferably, the method removes excess lanthanum-oxide and/or other lanthanoid-containing oxides without damaging other materials present on the microelectronic device including, but not limited to, thermal oxide, polysilicon, high-k material (e.g., hafnium-containing materials), and combinations thereof.
[0019] In an etching application, an etching composition as described herein is contacted in any suitable manner to the microelectronic device having lanthanum oxide or lanthanoid- containing oxide thereon, e.g., by spraying an etchant composition on the surface of the device, by dipping (in a volume of an etchant composition) of the device including the lanthanum oxide or lanthanoid-containing oxide material, by contacting the device with another material, e.g., a pad, or fibrous sorbent applicator element, that has an etchant composition absorbed thereon, by contacting the device including the lanthanum oxide or lanthanoid-containing oxide with a spraying etchant, by contacting the device including the lanthanum oxide or lanthanoid-containing oxide with a recirculating etchant composition, or by any other suitable means, manner or technique, by which an etchant composition is brought into contact with the lanthanum oxide or lanthanoid-containing oxide. The contacting conditions include a period of time and conditions sufficient to etch the lanthanum oxide or lanthanoid-containing oxide.
[0020] Following the achievement of the desired removal action, the etchant composition may be readily removed from microelectronic device to which it has previously been applied using a rinse solution for time in a range from about 1 sec to about 60 sec, preferably about 10 sec to about 40 sec, wherein the rinse solution preferably comprises water, more preferably ultrapure water. Thereafter, the microelectronic device may be dried with nitrogen gas. [0021] The features and advantages of the invention are more fully shown by the illustrative examples discussed below.
Example 1
[0022] Six solutions were prepared as follows:
Formulation A: 0.01 M NH4Cl
Formulation B: 0.05 M NH4Cl
Formulation C: 0.1 M NH4Cl
Formulation D: 0.2 M NH4Cl, adjusted to pH 6.08 with TMAH
Formulation E: 0. M NH4Cl, adjusted to pH 8.6 with TMAH
Formulation F: 90 vol% 0.1 M NH4Cl, 10.0 vol.% sorbitol
[0023] Blanketed lanthanum oxide coupons were dipped in a volume of formulations A-F, as well as pure water, for 30 sec, followed by withdrawal, and dip in rinsing water, and drying with nitrogen gas. The coupons were observed and the etch rates determined. The results are summarized in Table 1 below:
[0024] It can be seen that when the buffered chloride system has a pH between about 4 and about 6, there is excellent etch rate control with lanthanum oxide etch rates in a range from about 3 A min 1 to about 50 A min"1.
[0025] It is further noted that no damage to photoresist, hafnium oxide, titanium nitride or silicon oxide layers was observed when these materials were in the presence of formulations
A-F.
[0026] Although the invention has been variously disclosed herein with reference to illustrative embodiments and features, it will be appreciated that the embodiments and features described hereinabove are not intended to limit the invention, and that other variations, modifications and other embodiments will suggest themselves to those of ordinary
skill in the art, based on the disclosure herein. The invention therefore is to be broadly construed, as encompassing all such variations, modifications and alternative embodiments within the spirit and scope of the claims hereafter set forth.
Claims
1. A method of etching lanthanum oxide or other lanthanoid-containing oxides from the surface of a microelectronic device having same thereon, said method comprises contacting the lanthanum oxide or lanthanoid-containing oxide material with an etchant composition under the appropriate contacting conditions, wherein the etchant composition comprises a buffered halide system as the active ingredient.
2. The method of claim 1, wherein the buffered halide system comprises at least one [NR1R2R3R4J+X" salt as the active ingredient, wherein X = F, Cl, Br or I, and wherein R1, R2, R3 and R4 may be the same as or different from one another and are selected from the group consisting of hydrogen, straight chained CpC6 alkyls, branched CpC6 alkyls, substituted C6- Ci4 aryl, unsubstituted C6-Ci4 aryl, and combinations thereof.
3 The method of claim 1 , wherein the buffered halide system consists of at least one
[NR1R2R3R4J+X' salt as the active ingredient, wherein X = F, Cl, Br or I, and wherein R1, R2, R3 and R4 may be the same as or different from one another and are selected from the group consisting of hydrogen, straight chained CpC6 alkyls, branched CpC6 alkyls, substituted C6- Ci4 aryl, unsubstituted C6-Ci4 aryl, and combinations thereof.
4. The method of claim 1, wherein the buffered halide system consists essentially of at least one [NR1R2R3R4J+X" salt as the active ingredient, wherein X = F, Cl, Br or I, and wherein R1, R2, R3 and R4 may be the same as or different from one another and are selected from the group consisting of hydrogen, straight chained CpC6 alkyls, branched CpC6 alkyls, substituted C6-Ci4 aryl, unsubstituted C6-Ci4 aryl, and combinations thereof.
5. The method of claim 1, wherein the buffered halide system comprises at least one
[NR1R2R3R4J+X' salt as the active ingredient, wherein X = Cl, Br or I, and wherein R1, R2, R3 and R4 may be the same as or different from one another and are selected from the group consisting of hydrogen, straight chained Ci-Ce alkyls, branched Ci-Cβ alkyls, substituted C6- Ci4 aryl, unsubstituted C6-Ci4 aryl, and combinations thereof.
6 The method of claim 1 , wherein the buffered halide system consists of at least one
[NR1R2R3R4J+X" salt as the active ingredient, wherein X = Cl, Br or I, and wherein R1, R2, R3 and R4 may be the same as or different from one another and are selected from the group consisting of hydrogen, straight chained CpC6 alkyls, branched CpC6 alkyls, substituted C6- Ci4 aryl, unsubstituted C6-Ci4 aryl, and combinations thereof.
7. The method of claim 1, wherein the buffered halide system consists essentially of at least one [NR1R2R3R4J+X" salt as the active ingredient, wherein X = Cl, Br or I, and wherein R1, R2, R3 and R4 may be the same as or different from one another and are selected from the group consisting of hydrogen, straight chained CpC6 alkyls, branched CpC6 alkyls, substituted C6-Ci4 aryl, unsubstituted C6-Ci4 aryl, and combinations thereof.
8. The method of any of claims 2-7, wherein the at least one [NR1R2R3R4J+X" salt is selected from the group consisting of ammonium chloride, tetramethylammonium chloride, tetraethylammonium chloride, tetrapropylammonium chloride, tetrabutylammonium chloride, and combinations thereof.
9. The method of any of the preceding claims, wherein pH of the etchant composition is in a range from about 3 to about 6.
10. The method of claim 9, wherein the pH is adjusted using a base.
11. The method of any of claims 1, or 5-10, wherein the etchant composition is substantially devoid of fluoride ions.
12. The method of any of the preceding claims, wherein the amount of the at least one [NR1R2R3R4J+X" salt is in a range from about 0.001 M to about 1 M.
13. The method of any of the preceding claims, wherein the appropriate contacting conditions include time in a range from about 10 sec to about 180 sec.
14. The method of any of the preceding claims, wherein the appropriate contacting conditions include temperature in a range from about 5°C to about 600C.
15. The method of any of the preceding claims, further comprising rinsing the etchant composition from the microelectronic device with a rinsing solution.
16. The method of claim 15, wherein the rinsing solution comprises water.
17. The method of claims 15 or 16, further comprising drying the microelectronic device.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14913209P | 2009-02-02 | 2009-02-02 | |
| US61/149,132 | 2009-02-02 |
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| WO2010086745A1 true WO2010086745A1 (en) | 2010-08-05 |
| WO2010086745A8 WO2010086745A8 (en) | 2010-10-14 |
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| PCT/IB2010/000334 WO2010086745A1 (en) | 2009-02-02 | 2010-01-29 | Method of etching lanthanum-containing oxide layers |
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| WO (1) | WO2010086745A1 (en) |
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| US9175404B2 (en) | 2011-09-30 | 2015-11-03 | Advanced Technology Materials, Inc. | Etching agent for copper or copper alloy |
| US9238850B2 (en) | 2010-08-20 | 2016-01-19 | Advanced Technology Materials, Inc. | Sustainable process for reclaiming precious metals and base metals from e-waste |
| US9416338B2 (en) | 2010-10-13 | 2016-08-16 | Advanced Technology Materials, Inc. | Composition for and method of suppressing titanium nitride corrosion |
| US9546321B2 (en) | 2011-12-28 | 2017-01-17 | Advanced Technology Materials, Inc. | Compositions and methods for selectively etching titanium nitride |
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| CN113078209B (en) * | 2021-03-24 | 2022-06-21 | 长鑫存储技术有限公司 | Semiconductor structure, manufacturing method thereof and peripheral circuit |
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| Publication number | Publication date |
|---|---|
| TW201042718A (en) | 2010-12-01 |
| WO2010086745A8 (en) | 2010-10-14 |
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