WO2001040541A1 - Atomic-layer-chemical-vapor-deposition of films that contain silicon dioxide - Google Patents

Atomic-layer-chemical-vapor-deposition of films that contain silicon dioxide Download PDF

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Publication number
WO2001040541A1
WO2001040541A1 PCT/FI2000/001072 FI0001072W WO0140541A1 WO 2001040541 A1 WO2001040541 A1 WO 2001040541A1 FI 0001072 W FI0001072 W FI 0001072W WO 0140541 A1 WO0140541 A1 WO 0140541A1
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WIPO (PCT)
Prior art keywords
process according
compound
silicon
silicon compound
silicon dioxide
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PCT/FI2000/001072
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English (en)
French (fr)
Inventor
Eva Aro
Suvi Haukka
Marko Tuominen
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ASM Microchemistry Oy
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ASM Microchemistry Oy
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Priority to AU23743/01A priority Critical patent/AU2374301A/en
Priority to KR1020027006929A priority patent/KR100743768B1/ko
Priority to US10/148,525 priority patent/US7771533B2/en
Priority to JP2001542604A priority patent/JP5420129B2/ja
Priority to EP00987492.6A priority patent/EP1248865B1/en
Publication of WO2001040541A1 publication Critical patent/WO2001040541A1/en
Anticipated expiration legal-status Critical
Priority to US10/678,766 priority patent/US7824492B2/en
Priority to US11/615,827 priority patent/US7771534B2/en
Priority to US12/917,307 priority patent/US9514956B2/en
Ceased legal-status Critical Current

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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H10P14/6933—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing at least one rare earth element, e.g. silicate of scandium or silicate of yttrium
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
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    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H10P14/6689—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
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    • H10P14/6929—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx
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    • H10P14/693—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing hafnium, e.g. HfSiOx or HfSiON
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    • H10P14/6931—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing tantalum, e.g. TaSiOx
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    • H10P14/6932—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing titanium, e.g. TiSiOx
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    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
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Definitions

  • Atomic-layer-chemical-vapor-deposition of films that contain silicon dioxide Atomic-layer-chemical-vapor-deposition of films that contain silicon dioxide.
  • the present invention relates to a method according to the preamble of claim 1 of producing oxide films.
  • a thin film containing silicon dioxide is produced on a growth substrate by an ALCVD method by bonding a vaporisable silicon compound onto the growth substrate and converting the bonded silicon compound to silicon dioxide.
  • the invention also relates to a method according to the preamble of claim 20 of producing multicomponent oxides (i.e. mixed oxides or tertiary oxides).
  • SiO 2 can no longer be used as the gate dielectric (gate oxide) of MOSFET (metal-oxide-semiconductor field-effect transistor) since for achieving required capacitances the SiO 2 layer should be made so thin that the tunneling current increases disadvantageously high from the functional point of view of the component.
  • MOSFET metal-oxide-semiconductor field-effect transistor
  • SiO 2 has to be replaced by a dielectric material with higher dielectric constant. In that case a thicker layer of the dielectric material than SiO 2 can exist.
  • the capacitance of DRAM (Dynamic Random Access Memory) capacitors must remain nearly constant meanwhile their decrease expeditiously in size, thus the previously used SiO 2 and Si 3 N 4 have to be replaced with materials having higher dielectric constants than these.
  • the considered dielectric should be stable on the silicon surface, should most preferably be amorphous and should endure nearly unchanged under high post-treatment temperatures.
  • a state where electrically active defects are rare should be provided at the interface of silicon and the high permittivity metal oxide.
  • the structure of the capacitor dielectric must be very stable due to the applied high activation temperatures. Due to the above mentioned facts it is preferable to admix SiO 2 to the metal oxide with a higher dielectric constant.
  • Chemical Vapor Deposition is the most frequently used method of producing silicon dioxide (see patent publications JP 9306906, US 4 845 054, US 4 981 724, US 5 462 899, JP 20868486, JP 6158329, JP 80061810, US 4 872 947, JP 7026383, US 5 855 957 and US 5 849 644).
  • Mainly tetraethoxy silane (TEOS) has been used as the silicon source material
  • oxygen, water, hydrogen peroxide or ozone have been used as the oxygen source material in the patent publications.
  • the oxygen source material is always brought simultaneously with the silicon source material to the growth substrate.
  • the conventional CVD method is related to the difficulty of controlling the process, and neither a sufficiently good coverage with the thin layers nor a good conformality is always achieved by CVD.
  • the invention is based to the idea that thin films containing silicon dioxide are produced by the Atomic Layer Chemical Vapor Deposition (ALCVD) process, which is generally known also as Atomic Layer Epitaxy (ALE) or Atomic Layer Deposition (ALD).
  • ACVD Atomic Layer Chemical Vapor Deposition
  • ALE Atomic Layer Epitaxy
  • ALD Atomic Layer Deposition
  • ALCVD is a current method of growing thin films (US patent publication 4 085 430). According to the method a thin film is grown by means of saturable surface reactions, which are well separated from each other. The saturation is provided by means of chemisorption.
  • the reaction temperature is selected as that the gaseous source material is stable at the growth temperature and additionally, it does not condense or decompose on the surface but is capable to react selectively with the reactive sites of the surface, e.g. with the OH groups or oxygen bridges (M-O-M) present on the oxide surface.
  • OH groups functioning as reactive sites a so-called ligand exchange reaction takes place in which a covalent bond is formed between the surface and the source material (chemiso ⁇ tion).
  • a dissociating reaction takes place in which reaction a covalent bond is also formed (chemisorption).
  • the bond formed by chemisorption is very strong and the surface structure formed on the surface is stable which enables the saturation of the surface by one molecular layer.
  • the ligand exchange reactions are carried out by leading the gaseous or vaporised source materials alternately into the reactor and by purging the reactor with an inert gas between the pulses of the source materials (T. Suntola, Thin Solid Films 215 (1992) 84; Niinist ⁇ et al. Materials Science and Engineering B 41 (1996) 23).
  • Also even and uniform films can be grown by ALCVD even on large surface areas. Accordingly films can be grown on both even and heterogeneous surface as well as on a grooved surface. Controlling the thickness and the composition of the film by means of the number of reaction cycles is precise and simple.
  • Silicon dioxide has also been grown by the ALCVD process.
  • Compounds Si(NCO) 4 and N(C 2 H 5 ) 3 (K. Yamaguchi et al., Appl. Surf. Sci. (1998) 130 - 132) have been used as source materials.
  • Producing silicon dioxide by Molecular Layer ALE and UHV-ALE processes using SiCl 4 and H 2 O as source materials is also known in the literature (Surface Review and Letters, Vol. 6, Nos 3 & 4 (1999) 435 - 448).
  • the objective of the present invention is to eliminate the disadvantages related to the prior art and to provide a novel method, which enables a controlled growth of SiO 2 containing thin films with sufficiently short reaction times.
  • the invention is based to the discovery that the above mentioned objectives can be achieved by using a silicon compound containing an organic ligand as the silicon source and a reactive oxygen source, such as ozone, as the oxygen source material.
  • a silicon compound containing an organic ligand as the silicon source
  • a reactive oxygen source such as ozone
  • Multicomponent oxides in which the amount of silicon dioxide can be varied in a controlled way can easily be prepared by the proposed solution.
  • the multicomponent oxides are therefore prepared by binding from the gas phase a suitable, vaporised silicon compound onto the growth substrate, converting the bonded silicon compound to silicon dioxide, bonding from the gas phase a vaporised metal compound or a vaporised compound of another semimetal onto the growth substrate and converting the bonded metal compound or the compound of another semimetal to a corresponding oxide whereby the silicon compound and the compound of another semimetal and/or metal are bonded onto the growth substrate in a desired order.
  • the method for preparing oxide films according to the first embodiment of the invention is characterized by what is stated in the characterizing part of claim 1.
  • the method of preparing multicomponent oxide films according to the invention is in turn characterized by what is stated in the characterizing part of claim 20.
  • the ALCVD process provides a possibility for growing a multistaged interlayer containing both silicon dioxide and metal oxide prior to growing the actual metal oxide, which has a high dielectricity.
  • the stability of the capacitor dielectric can be increased by mixing amo ⁇ hous silicon dioxide into the dielectric.
  • Such a silicon dioxide material can be used further in so-called STI (shallow trench isolation) structure.
  • STI shallow trench isolation
  • the function of STI is to isolate the transistors from each other in both the circuit and memory structures.
  • LOCOS isolation is in use, which isolation is not suitable in the future circuits because of its bulkiness.
  • STI trenches can be filled but often the trench has to be widened in the upper part in order to avoid void formation in the middle of the STI isolation. Enlargement of the trench leads to increase of the STI area, i.e. the area of the isolation area increases.
  • ALCVD is an especially suitable process for producing STI because ALCVD is characterized by the ability to grow silicon dioxide of uniform quality and without void formation on uneven growth substrates, especially also onto narrow trenches. Using ALCVD enables thus a narrower isolation area between the circuits whereby the packing density of the circuits can be increased.
  • silicon dioxide can be used as the isolation layer in both the writing/reading head and in the encapsulation of the writing/reading head.
  • the processing temperature must be low in all steps.
  • physical (sputtering) methods are used in the field, the problem of said methods being the unevenness of produced film.
  • ALCVD has the capability to produce both physically and electrically homogenous thin film. It is especially preferable to use a low temperature ALCVD silicon dioxide process that provides a uniformly covering and electrically homogenous SiO 2 thin film. In this way the reproducibility and reliability of this process step can be increased.
  • the forming temperature of silicon dioxide can be significantly decreased. According to the invention it can be operated especially at a temperature lower than 450 °C, most preferably at 400 °C at the most. In that case the whole growing cycle can also be accomplished at the same temperature, which has a great significance for industrial processing. Additionally, by using these reactive oxygen sources a very wide group of organic silicon compounds, which are not possible to be converted by e.g. water, become available.
  • silicon dioxide thin films and films mixed with silicon dioxide are grown in the ALCVD reactor preferably at the temperature of 150 - 450 °C.
  • Even flat (such as glass or wafer) or grooved flat materials can be used as a substrate.
  • On the surface of the substrate can also exist a so-called HSG (hemispherical grain) structure on which the film is grown.
  • a powdery material which has a large surface area, can be used as a substrate.
  • growth substrate designates in this invention the surface on which the thin film is grown. The surface can consist of the above mentioned substrate or of a thin film grown onto the substrate or of another structure.
  • the silicon source material is vaporised and led onto the substrate on which it reacts and forms via a ligand exchange reaction or dissociation reaction one chemisorbed molecular layer on the surface. After the reaction the reaction space is purged carefully with an inert gas to remove the unreacted source material and reaction products from the reaction space.
  • vaporisable compounds of silicon which contain at least one organic ligand, are used as the silicon source material.
  • Organic ligand designates a hydrogen carbyl group, which is derived from an organic compound. Such a ligand has thus itself a C-C bond (e.g.
  • silane, siloxane or silazane are used as vaporisable silicon compounds. These are commercially available compounds.
  • a silicon compound which has a boiling point of 400 °C at the most at a pressure of 10 mbar is selected.
  • the ALCVD process can be carried out in the above mentioned preferred temperature range of 150 - 400 °C.
  • n is an integer 1 - 3
  • alkyl and alkoxy groups contain 1 - 10 carbon atoms, most preferably 1 - 6 carbon atoms.
  • amino-substituted silanes and silazanes such as 3-aminoalkyltrialkoxy silanes, for example 3-aminopropyltriethoxy silane NH 2 -CH 2 CH 2 CH 2 -Si(O-CH 2 CH 3 ) 3 (AMTES) and 3-aminopropyltrimethoxy silane (NH 2 -CH 2 CH 2 CH 2 -Si(O-CH 3 ) 3 (AMTMS) and hexa-alkyldisilazane (CH 3 ) 3 Si-NH-Si(CH 3 ) 3 (HMDS) can be mentioned.
  • 3-aminoalkyltrialkoxy silanes for example 3-aminopropyltriethoxy silane NH 2 -CH 2 CH 2 CH 2 -Si(O-CH 2 CH 3 ) 3 (AMTES) and 3-aminopropyltrimethoxy silane (NH 2 -CH 2 CH 2 CH 2 -Si(O-CH 3
  • the silicon compound can also be formed during the ALCVD process in the connection of gas-phase reactions so that while the silicon compound is bonding, a new gas-phase silicon compound is formed which in turn is able to bond to the hydroxyl and, optionally oxide groups of the growth substrate.
  • this phenomenon is called "in situ" formation of silicon compound.
  • Such an in situ formed silicon compound comprises typically a silane compound, e.g. a silane compound which has a formula SiL,L 2 L 3 L 4 , wherein L, represents an amino group and L 2 - L 4 represent alkyl or alkoxy group.
  • This silane compound is formed e.g. when the growth substrate is contacted with hexa- alkyldisilazane at 350 - 450 °C at the pressure of 0,1 - 50 mbar.
  • a suitable reactive oxygen source is introduced into the reaction space, said oxygen source providing the conversion of the silicon compound to silicon dioxide on the growth surface.
  • Ozone which is introduced into the reaction space, reacts with the ligands of the chemisorbed silicon source material forming OH groups and oxygen bridges on the surface. In other words ozone combusts the organic ligands and water formed in the combustion reaction forms further OH groups.
  • a multicomponent film is achieved by changing the source material, i.e. by growing some other oxide onto the growth substrate between silicon dioxide growth cycles. From the point of view of the invention the growth order of the oxide compounds can be optional.
  • a multicomponent oxide is grown by vaporising the metal source material and leading the vaporised metal source material onto the substrate on which it reacts forming one molecular layer on the surface via a ligand exchange reaction and/or dissociation reaction.
  • the reaction space is purged carefully with an inert gas to remove the unreacted source material and the reaction products from the reaction space.
  • the oxygen source material is led into the reaction space, said oxygen source material reacting with the remaining ligands (e.g. chloride ligands) of the chemisorbed metal compound complex (e.g. zirkonium complex) forming new OH groups and oxygen bridges on the surface.
  • the reaction space is purged again carefully. In the next step the above-described growing cycle of silicon dioxide can be carried out.
  • any of the above mentioned silicon source materials can be used as the silicon compound. It must, however, be noted that also the halide compounds of silicon (silicon tetrachloride, silicon tetrafluoride, silicon tetraiodide etc.) as well as the above mentioned amino compounds are, however, suitable for being used as silicon source materials. Any of the below specified oxygen sources can be used as the oxygen source, most preferably, however, water or ozone.
  • One or more metals or semimetals can function as the second cation of the multicomponent oxide (i.e. tertiary oxide).
  • Metals belonging to the groups Ilia, IVa and Va (transition metals) of the periodic table of the elements including the rare earth metals, i.e. lanthane and lanthanoids, as well as the metals and semimetals of group IVb can especially be mentioned of the metals.
  • any stable vaporisable compound of metal in question can be used.
  • the following metal source materials were used: aluminium chloride as aluminium source material, titanium tetrachloride (TiCl 4 ) as titanium source material, tantalum pentachloride (TaCl 5 ) as tantalum source material, hafnium tetrachloride (HfCl 4 ) as hafnium source material, zirkonium tetrachloride (ZrCl 4 ) as zirkonium source material, yttrium betadiketonate (Y(thd) 3 ) as yttrium source material and lanthanum betadiketonate
  • La(thd) 3 as lanthanum source material.
  • water steam (H 2 O) was used as the oxygen source with aluminium, titanium, zirkonium and hafnium and tantalum source material and ozone (O 3 ) was used as the oxygen source with lanthanum and yttrium source material.
  • Multicomponent films containing various concentrations of silicon dioxide e.g. SiAlO x , SiTiO x , SiTaO x , SiHfO x , SiZrO x , SiYO x , SiLaO x
  • silicon dioxide e.g. SiAlO x , SiTiO x , SiTaO x , SiHfO x , SiZrO x , SiYO x , SiLaO x
  • the amount of oxide can vary and the oxide is not always completely stoichiometric.
  • the ratio of the amount of the metal oxide and silicon dioxide cycles can be varied.
  • the number of cycles of the metal oxide can vary between 1 - 1000 and that of silicon dioxide between 1 - 1000.
  • the number of cycles of the metal oxide varies between 1 - 50 and that of silicon dioxide between 1 - 50.
  • the growth rate of the multicomponent oxide is higher than that of either individual oxide from which the multicomponent oxide is formed.
  • the growth rate of La ⁇ from La(thd) 3 and ozone as well as the growth rate of Y 2 O 3 from Y(thd) 3 and ozone is 0,2 A/cycle which is at the same time equal to the growth rate of SiO 2 from 3-aminopropylmethoxy silane and ozone.
  • oxygen compound suitable for using in the ALCVD technology can function as the oxygen source in the above silicon dioxide and multicomponent oxide processes.
  • Preferred oxygen source materials are for example water, oxygen and hydrogen peroxide and the aqueous solutions of hydrogen peroxide. Most preferably such oxygen sources are used which are more reactive than water towards silicon compound which contains an organic ligand.
  • an especially preferred oxygen source material is ozone (O 3 ). Ozone can be produced by an ozone generator and it is most preferably introduced into the reaction space with the aid of nitrogen gas (or inert gas of same kind) whereby the concentration of ozone is about 1 - 30 vol.-%, preferably about 2 - 25 vol.-%.
  • organic ligands of silicon source material By using ozone as the source material organic ligands of silicon source material, said ligands forming a linear Si-C bond, can be changed at such a temperature in which the other possible ligands of the silicon source material, for example alkoxy ligands, which form a Si-O-C bond are not uncontrolled decomposing.
  • One or more of the following compounds can also be used as the oxygen source material: - oxides of nitrogen, such as N 2 O, NO and NO 2 ,
  • chlorodioxide ClO 2
  • perchloroacid HC10 4
  • -O-O-H peracids
  • perbenzoic acid C 6 H 5 COOOH
  • peracetic acid CH 3 COOOH
  • - alcohols such as methanol (CH 3 OH) and ethanol (CH 3 CH 2 OH)
  • radicals for example oxygen radical (O " ) or hydroxyl radical (OH).
  • SiO 2 films were grown in a flow type F-120 ALCVD reactor (ASM Microchemistry Ltd.).
  • 3-aminopropyltriethoxy silane NH 2 -CH 2 CH 2 CH 2 -Si(O-CH 2 CH 3 ) 3 AMTES
  • 3- aminopropyltrimethoxy silane NH 2 -CH 2 CH 2 CH 2 -Si(O-CH 3 ) 3
  • AMTMS 3- aminopropyltrimethoxy silane
  • CH 3 ) 3 Si-NH-Si(CH 3 ) 3 (HMDS) were used as the silicon source material.
  • Ozone (O 3 ) was used as the oxygen source material.
  • AMTES and AMTMS were inside of the reactor. Ozone and HMDS were led into the reactor from outside.
  • the reaction temperature of AMTES was 200 or 300 °C, that of AMTMS 300 °C and HMDS 400 °C.
  • the growing of SiO 2 from AMTES was carried out with the aid of alternating AMTES and ozone pulses between of which the reaction space was purged carefully so that the source materials would not be simultaneously present in the reaction space.
  • the duration of the AMTES pulse was 1,0 s and that of the purging pulse 2 s.
  • the duration of the ozone pulse was 4,0 s and the duration of the purging pulse 4,0 s.
  • the growth rate of SiO 2 was 0,15 A /reaction cycle at the reaction temperature of 300 °C and 0,28 A /cycle at the reaction temperature of 200 °C.
  • the refractive index of silicon dioxide grown at 300 °C was 1,4.
  • AMTMS as the source material the pulsing times were 0,5 s, 0,5 s, 2,0 s and 1 ,0 s, respectively, and the growth rate was 0,16 A reaction cycle.
  • the growing of SiO 2 from HMDS was carried out in the same way as above.
  • the duration of the HMDS pulse was 0,5 s and that of the purging pulse 2 s.
  • the duration of the ozone pulse was 2,5 s and that of the purging pulse 1 s.
  • the growth rate was 0,17 A and the value of the refractive index varied between 1,48 - 1,57.
  • ozone can be used together with the vaporisable silicon source material for growing silicon dioxide by the ALCVD process.
  • silicon source materials the advantage of AMTES and AMTMS is the low reaction temperature when ozone is used as the oxygen source. This enables further the preparing of multicomponent oxides since other than metal chlorides do not stand reaction temperatures above 350 °C without decomposing.
  • Multicomponent oxides were grown in the above reactor using AMTMS as the silicon source material.
  • the AMTMS pulse was 0,5 s, the purging pulse 0,5 s, the ozone pulse 3,5 s and the purging pulse 1 s.
  • the pulse of the metal source material was correspondingly 0,5 s and the purging pulse 0,5 s. If water was used as the oxygen source the duration of the water pulse was 0,2 s and that of the purging pulse 0,5 s.
  • ozone with the metal source material the duration of the ozone pulse was 3,5 s and that of the purging pulse 0,5 s.
  • the growth rates and cycle ratios are shown in the table below.
  • the multicomponent samples were analyzed by ESCA (electron spectroscopy for chemical analysis).
  • the thin film samples were analyzed in three different sites showing that the multicomponent oxides were very homogenous. Furthermore, the multicomponent oxides were very uniform which is typical for the ALCVD process when the chemistry of the growing is favourable.

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Publication number Priority date Publication date Assignee Title
EP1262576A1 (en) * 2001-05-30 2002-12-04 Sandvik Aktiebolag CVD Al2O3 coated cutting tool
JP2003055093A (ja) * 2001-08-03 2003-02-26 Asm Microchemistry Oy イットリウム酸化物およびランタン酸化物薄膜を堆積する方法
US6541280B2 (en) 2001-03-20 2003-04-01 Motorola, Inc. High K dielectric film
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US6875271B2 (en) 2002-04-09 2005-04-05 Applied Materials, Inc. Simultaneous cyclical deposition in different processing regions
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US20030232501A1 (en) 2002-06-14 2003-12-18 Kher Shreyas S. Surface pre-treatment for enhancement of nucleation of high dielectric constant materials
KR100505668B1 (ko) * 2002-07-08 2005-08-03 삼성전자주식회사 원자층 증착 방법에 의한 실리콘 산화막 형성 방법
KR100464855B1 (ko) * 2002-07-26 2005-01-06 삼성전자주식회사 박막 형성 방법과, 이를 이용한 커패시터 형성 방법 및트랜지스터 형성 방법
US8617312B2 (en) * 2002-08-28 2013-12-31 Micron Technology, Inc. Systems and methods for forming layers that contain niobium and/or tantalum
US6784049B2 (en) * 2002-08-28 2004-08-31 Micron Technology, Inc. Method for forming refractory metal oxide layers with tetramethyldisiloxane
US6730164B2 (en) * 2002-08-28 2004-05-04 Micron Technology, Inc. Systems and methods for forming strontium- and/or barium-containing layers
US7084076B2 (en) * 2003-02-27 2006-08-01 Samsung Electronics, Co., Ltd. Method for forming silicon dioxide film using siloxane
US7115528B2 (en) * 2003-04-29 2006-10-03 Micron Technology, Inc. Systems and method for forming silicon oxide layers
US7125815B2 (en) 2003-07-07 2006-10-24 Micron Technology, Inc. Methods of forming a phosphorous doped silicon dioxide comprising layer
JP4800627B2 (ja) * 2004-03-24 2011-10-26 セイコーエプソン株式会社 強誘電体メモリ素子
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
KR100578819B1 (ko) * 2004-07-15 2006-05-11 삼성전자주식회사 원자층 적층 방법과 이를 이용한 게이트 구조물의 제조방법 및 커패시터의 제조 방법
JP2006118669A (ja) * 2004-10-25 2006-05-11 Sanoh Industrial Co Ltd 樹脂チューブ
US7682940B2 (en) * 2004-12-01 2010-03-23 Applied Materials, Inc. Use of Cl2 and/or HCl during silicon epitaxial film formation
JP2006261434A (ja) * 2005-03-17 2006-09-28 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude シリコン酸化膜の形成方法
US7648927B2 (en) 2005-06-21 2010-01-19 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US7651955B2 (en) 2005-06-21 2010-01-26 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US7798096B2 (en) 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
US20070277734A1 (en) * 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US20070289534A1 (en) * 2006-05-30 2007-12-20 Applied Materials, Inc. Process chamber for dielectric gapfill
US7825038B2 (en) * 2006-05-30 2010-11-02 Applied Materials, Inc. Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
US7902080B2 (en) * 2006-05-30 2011-03-08 Applied Materials, Inc. Deposition-plasma cure cycle process to enhance film quality of silicon dioxide
US20070281106A1 (en) * 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US7498273B2 (en) * 2006-05-30 2009-03-03 Applied Materials, Inc. Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes
US7790634B2 (en) * 2006-05-30 2010-09-07 Applied Materials, Inc Method for depositing and curing low-k films for gapfill and conformal film applications
US8232176B2 (en) * 2006-06-22 2012-07-31 Applied Materials, Inc. Dielectric deposition and etch back processes for bottom up gapfill
US7795160B2 (en) * 2006-07-21 2010-09-14 Asm America Inc. ALD of metal silicate films
US8029620B2 (en) 2006-07-31 2011-10-04 Applied Materials, Inc. Methods of forming carbon-containing silicon epitaxial layers
JP5193527B2 (ja) * 2006-09-28 2013-05-08 東京エレクトロン株式会社 シリコン酸化膜の形成方法、シリコン酸化膜の形成装置及びプログラム
US8476125B2 (en) * 2006-12-15 2013-07-02 University Of South Carolina Fabrication technique for high frequency, high power group III nitride electronic devices
US8338273B2 (en) * 2006-12-15 2012-12-25 University Of South Carolina Pulsed selective area lateral epitaxy for growth of III-nitride materials over non-polar and semi-polar substrates
JP4353379B2 (ja) * 2006-12-19 2009-10-28 株式会社トリケミカル研究所 膜形成材料、膜形成方法、及び素子
US20090041952A1 (en) 2007-08-10 2009-02-12 Asm Genitech Korea Ltd. Method of depositing silicon oxide films
US7745352B2 (en) * 2007-08-27 2010-06-29 Applied Materials, Inc. Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process
US7943531B2 (en) * 2007-10-22 2011-05-17 Applied Materials, Inc. Methods for forming a silicon oxide layer over a substrate
US7541297B2 (en) * 2007-10-22 2009-06-02 Applied Materials, Inc. Method and system for improving dielectric film quality for void free gap fill
US7867923B2 (en) 2007-10-22 2011-01-11 Applied Materials, Inc. High quality silicon oxide films by remote plasma CVD from disilane precursors
US7803722B2 (en) * 2007-10-22 2010-09-28 Applied Materials, Inc Methods for forming a dielectric layer within trenches
US7964040B2 (en) * 2007-11-08 2011-06-21 Applied Materials, Inc. Multi-port pumping system for substrate processing chambers
US20090120584A1 (en) * 2007-11-08 2009-05-14 Applied Materials, Inc. Counter-balanced substrate support
US20090120368A1 (en) * 2007-11-08 2009-05-14 Applied Materials, Inc. Rotating temperature controlled substrate pedestal for film uniformity
US7659158B2 (en) 2008-03-31 2010-02-09 Applied Materials, Inc. Atomic layer deposition processes for non-volatile memory devices
US8357435B2 (en) * 2008-05-09 2013-01-22 Applied Materials, Inc. Flowable dielectric equipment and processes
US20090277587A1 (en) * 2008-05-09 2009-11-12 Applied Materials, Inc. Flowable dielectric equipment and processes
US20090325391A1 (en) * 2008-06-30 2009-12-31 Asm International Nv Ozone and teos process for silicon oxide deposition
US8491967B2 (en) 2008-09-08 2013-07-23 Applied Materials, Inc. In-situ chamber treatment and deposition process
US20100081293A1 (en) * 2008-10-01 2010-04-01 Applied Materials, Inc. Methods for forming silicon nitride based film or silicon carbon based film
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US20100136313A1 (en) * 2008-12-01 2010-06-03 Asm Japan K.K. Process for forming high resistivity thin metallic film
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8980382B2 (en) * 2009-12-02 2015-03-17 Applied Materials, Inc. Oxygen-doping for non-carbon radical-component CVD films
US7935643B2 (en) * 2009-08-06 2011-05-03 Applied Materials, Inc. Stress management for tensile films
US8741788B2 (en) 2009-08-06 2014-06-03 Applied Materials, Inc. Formation of silicon oxide using non-carbon flowable CVD processes
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US7989365B2 (en) * 2009-08-18 2011-08-02 Applied Materials, Inc. Remote plasma source seasoning
TWI392759B (zh) * 2009-09-28 2013-04-11 Univ Nat Taiwan 透明導電薄膜及其形成方法
US20110136347A1 (en) * 2009-10-21 2011-06-09 Applied Materials, Inc. Point-of-use silylamine generation
US8449942B2 (en) * 2009-11-12 2013-05-28 Applied Materials, Inc. Methods of curing non-carbon flowable CVD films
JP2010056582A (ja) * 2009-12-10 2010-03-11 Tokyo Electron Ltd 誘電体膜の形成方法
US20110159213A1 (en) * 2009-12-30 2011-06-30 Applied Materials, Inc. Chemical vapor deposition improvements through radical-component modification
WO2011090626A2 (en) * 2009-12-30 2011-07-28 Applied Materials, Inc. Dielectric film growth with radicals produced using flexible nitrogen/hydrogen ratio
US8329262B2 (en) * 2010-01-05 2012-12-11 Applied Materials, Inc. Dielectric film formation using inert gas excitation
SG182336A1 (en) * 2010-01-06 2012-08-30 Applied Materials Inc Flowable dielectric using oxide liner
WO2011084752A2 (en) 2010-01-07 2011-07-14 Applied Materials, Inc. In-situ ozone cure for radical-component cvd
CN102844848A (zh) * 2010-03-05 2012-12-26 应用材料公司 通过自由基成分化学气相沉积的共形层
US8236708B2 (en) 2010-03-09 2012-08-07 Applied Materials, Inc. Reduced pattern loading using bis(diethylamino)silane (C8H22N2Si) as silicon precursor
US7994019B1 (en) 2010-04-01 2011-08-09 Applied Materials, Inc. Silicon-ozone CVD with reduced pattern loading using incubation period deposition
US8476142B2 (en) 2010-04-12 2013-07-02 Applied Materials, Inc. Preferential dielectric gapfill
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US8524004B2 (en) 2010-06-16 2013-09-03 Applied Materials, Inc. Loadlock batch ozone cure
US8318584B2 (en) 2010-07-30 2012-11-27 Applied Materials, Inc. Oxide-rich liner layer for flowable CVD gapfill
US9285168B2 (en) 2010-10-05 2016-03-15 Applied Materials, Inc. Module for ozone cure and post-cure moisture treatment
US8664127B2 (en) 2010-10-15 2014-03-04 Applied Materials, Inc. Two silicon-containing precursors for gapfill enhancing dielectric liner
US8901016B2 (en) 2010-12-28 2014-12-02 Asm Japan K.K. Method of forming metal oxide hardmask
US20120180954A1 (en) 2011-01-18 2012-07-19 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8450191B2 (en) 2011-01-24 2013-05-28 Applied Materials, Inc. Polysilicon films by HDP-CVD
US8716154B2 (en) 2011-03-04 2014-05-06 Applied Materials, Inc. Reduced pattern loading using silicon oxide multi-layers
US8445078B2 (en) 2011-04-20 2013-05-21 Applied Materials, Inc. Low temperature silicon oxide conversion
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
US8466073B2 (en) 2011-06-03 2013-06-18 Applied Materials, Inc. Capping layer for reduced outgassing
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US9793148B2 (en) 2011-06-22 2017-10-17 Asm Japan K.K. Method for positioning wafers in multiple wafer transport
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US10707082B2 (en) 2011-07-06 2020-07-07 Asm International N.V. Methods for depositing thin films comprising indium nitride by atomic layer deposition
US9404178B2 (en) 2011-07-15 2016-08-02 Applied Materials, Inc. Surface treatment and deposition for reduced outgassing
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US8617989B2 (en) 2011-09-26 2013-12-31 Applied Materials, Inc. Liner property improvement
US8551891B2 (en) 2011-10-04 2013-10-08 Applied Materials, Inc. Remote plasma burn-in
US9341296B2 (en) 2011-10-27 2016-05-17 Asm America, Inc. Heater jacket for a fluid line
US9096931B2 (en) 2011-10-27 2015-08-04 Asm America, Inc Deposition valve assembly and method of heating the same
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US9005539B2 (en) 2011-11-23 2015-04-14 Asm Ip Holding B.V. Chamber sealing member
US9167625B2 (en) 2011-11-23 2015-10-20 Asm Ip Holding B.V. Radiation shielding for a substrate holder
US9202727B2 (en) 2012-03-02 2015-12-01 ASM IP Holding Susceptor heater shim
US8946830B2 (en) 2012-04-04 2015-02-03 Asm Ip Holdings B.V. Metal oxide protective layer for a semiconductor device
US8796097B2 (en) 2012-04-26 2014-08-05 University Of South Carolina Selectively area regrown III-nitride high electron mobility transistor
TWI622664B (zh) 2012-05-02 2018-05-01 Ａｓｍ智慧財產控股公司 相穩定薄膜，包括該薄膜之結構及裝置，及其形成方法
US9023427B2 (en) * 2012-05-16 2015-05-05 Asm Ip Holding B.V. Methods for forming multi-component thin films
US8933375B2 (en) 2012-06-27 2015-01-13 Asm Ip Holding B.V. Susceptor heater and method of heating a substrate
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9117866B2 (en) 2012-07-31 2015-08-25 Asm Ip Holding B.V. Apparatus and method for calculating a wafer position in a processing chamber under process conditions
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US8889566B2 (en) 2012-09-11 2014-11-18 Applied Materials, Inc. Low cost flowable dielectric films
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
KR101512315B1 (ko) * 2012-10-02 2015-04-15 모진희 실리콘이 포함된 도금액 및 이를 이용한 실리콘이 도금된 기판 제조방법
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US9640416B2 (en) 2012-12-26 2017-05-02 Asm Ip Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
US9505737B2 (en) 2013-01-11 2016-11-29 Corsair Pharma, Inc. Treprostinil derivative compounds and methods of using same
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
KR102052664B1 (ko) 2013-03-15 2019-12-06 삼성전자주식회사 트리알킬실란 계열의 실리콘 전구체 및 이를 이용하는 박막 형성 방법
US9324559B2 (en) * 2013-03-15 2016-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. Thin film deposition apparatus with multi chamber design and film deposition methods
US8993054B2 (en) 2013-07-12 2015-03-31 Asm Ip Holding B.V. Method and system to reduce outgassing in a reaction chamber
US9018111B2 (en) 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US9793115B2 (en) 2013-08-14 2017-10-17 Asm Ip Holding B.V. Structures and devices including germanium-tin films and methods of forming same
US9396934B2 (en) 2013-08-14 2016-07-19 Asm Ip Holding B.V. Methods of forming films including germanium tin and structures and devices including the films
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US9605343B2 (en) 2013-11-13 2017-03-28 Asm Ip Holding B.V. Method for forming conformal carbon films, structures conformal carbon film, and system of forming same
US10179947B2 (en) 2013-11-26 2019-01-15 Asm Ip Holding B.V. Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US9412581B2 (en) 2014-07-16 2016-08-09 Applied Materials, Inc. Low-K dielectric gapfill by flowable deposition
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
KR102300403B1 (ko) 2014-11-19 2021-09-09 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10043661B2 (en) 2015-07-13 2018-08-07 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US9899291B2 (en) 2015-07-13 2018-02-20 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
US10087525B2 (en) 2015-08-04 2018-10-02 Asm Ip Holding B.V. Variable gap hard stop design
US9647114B2 (en) 2015-08-14 2017-05-09 Asm Ip Holding B.V. Methods of forming highly p-type doped germanium tin films and structures and devices including the films
US9711345B2 (en) 2015-08-25 2017-07-18 Asm Ip Holding B.V. Method for forming aluminum nitride-based film by PEALD
US10121671B2 (en) 2015-08-28 2018-11-06 Applied Materials, Inc. Methods of depositing metal films using metal oxyhalide precursors
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US9607842B1 (en) 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
US9909214B2 (en) 2015-10-15 2018-03-06 Asm Ip Holding B.V. Method for depositing dielectric film in trenches by PEALD
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9786491B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US9786492B2 (en) * 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US9905420B2 (en) 2015-12-01 2018-02-27 Asm Ip Holding B.V. Methods of forming silicon germanium tin films and structures and devices including the films
US9607837B1 (en) 2015-12-21 2017-03-28 Asm Ip Holding B.V. Method for forming silicon oxide cap layer for solid state diffusion process
US9735024B2 (en) 2015-12-28 2017-08-15 Asm Ip Holding B.V. Method of atomic layer etching using functional group-containing fluorocarbon
US9627221B1 (en) 2015-12-28 2017-04-18 Asm Ip Holding B.V. Continuous process incorporating atomic layer etching
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US9754779B1 (en) 2016-02-19 2017-09-05 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10087522B2 (en) 2016-04-21 2018-10-02 Asm Ip Holding B.V. Deposition of metal borides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
KR102378021B1 (ko) 2016-05-06 2022-03-23 에이에스엠 아이피 홀딩 비.브이. SiOC 박막의 형성
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US9793135B1 (en) 2016-07-14 2017-10-17 ASM IP Holding B.V Method of cyclic dry etching using etchant film
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
KR102354490B1 (ko) 2016-07-27 2022-01-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10177025B2 (en) 2016-07-28 2019-01-08 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10090316B2 (en) 2016-09-01 2018-10-02 Asm Ip Holding B.V. 3D stacked multilayer semiconductor memory using doped select transistor channel
US10703915B2 (en) * 2016-09-19 2020-07-07 Versum Materials Us, Llc Compositions and methods for the deposition of silicon oxide films
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR102762543B1 (ko) 2016-12-14 2025-02-05 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US9916980B1 (en) 2016-12-15 2018-03-13 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
KR102700194B1 (ko) 2016-12-19 2024-08-28 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10103040B1 (en) 2017-03-31 2018-10-16 Asm Ip Holding B.V. Apparatus and method for manufacturing a semiconductor device
USD830981S1 (en) 2017-04-07 2018-10-16 Asm Ip Holding B.V. Susceptor for semiconductor substrate processing apparatus
US10847529B2 (en) 2017-04-13 2020-11-24 Asm Ip Holding B.V. Substrate processing method and device manufactured by the same
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
KR102627238B1 (ko) 2017-05-05 2024-01-19 에이에스엠 아이피 홀딩 비.브이. 산소 함유 박막의 형성을 제어하기 위한 플라즈마 강화 증착 공정
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
TWI794238B (zh) 2017-07-13 2023-03-01 荷蘭商Ａｓｍ智慧財產控股公司 於單一加工腔室中自半導體膜移除氧化物及碳之裝置及方法
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
TWI815813B (zh) 2017-08-04 2023-09-21 荷蘭商Ａｓｍ智慧財產控股公司 用於分配反應腔內氣體的噴頭總成
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10236177B1 (en) 2017-08-22 2019-03-19 ASM IP Holding B.V.. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
WO2019103613A1 (en) 2017-11-27 2019-05-31 Asm Ip Holding B.V. A storage device for storing wafer cassettes for use with a batch furnace
TWI791689B (zh) 2017-11-27 2023-02-11 荷蘭商Ａｓｍ智慧財產控股私人有限公司 包括潔淨迷你環境之裝置
US10748760B2 (en) * 2017-11-30 2020-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Varying temperature anneal for film and structures formed thereby
DE102018124675B4 (de) 2017-11-30 2025-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Glühen von Film bei unterschiedlichen Temperaturen und dadurch ausgebildete Strukturen
US10991573B2 (en) 2017-12-04 2021-04-27 Asm Ip Holding B.V. Uniform deposition of SiOC on dielectric and metal surfaces
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US11482412B2 (en) 2018-01-19 2022-10-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
WO2019158960A1 (en) 2018-02-14 2019-08-22 Asm Ip Holding B.V. A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
WO2019187337A1 (ja) * 2018-03-28 2019-10-03 株式会社明電舎 酸化膜形成方法
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR102600229B1 (ko) 2018-04-09 2023-11-10 에이에스엠 아이피 홀딩 비.브이. 기판 지지 장치, 이를 포함하는 기판 처리 장치 및 기판 처리 방법
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
TWI843623B (zh) 2018-05-08 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
US12272527B2 (en) 2018-05-09 2025-04-08 Asm Ip Holding B.V. Apparatus for use with hydrogen radicals and method of using same
KR20190129718A (ko) 2018-05-11 2019-11-20 에이에스엠 아이피 홀딩 비.브이. 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
TWI840362B (zh) 2018-06-04 2024-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 水氣降低的晶圓處置腔室
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
KR20250134000A (ko) 2018-06-27 2025-09-09 에이에스엠 아이피 홀딩 비.브이. 금속 함유 재료를 형성하기 위한 주기적 증착 방법 및 금속 함유 재료를 포함하는 필름 및 구조체
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
KR102686758B1 (ko) 2018-06-29 2024-07-18 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102707956B1 (ko) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344B (zh) 2018-10-01 2024-10-25 Asmip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US12378665B2 (en) 2018-10-26 2025-08-05 Asm Ip Holding B.V. High temperature coatings for a preclean and etch apparatus and related methods
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR102748291B1 (ko) 2018-11-02 2024-12-31 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
TWI866480B (zh) 2019-01-17 2024-12-11 荷蘭商Ａｓｍ Ｉｐ 私人控股有限公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR102727227B1 (ko) 2019-01-22 2024-11-07 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
TWI845607B (zh) 2019-02-20 2024-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
KR102638425B1 (ko) 2019-02-20 2024-02-21 에이에스엠 아이피 홀딩 비.브이. 기판 표면 내에 형성된 오목부를 충진하기 위한 방법 및 장치
TWI838458B (zh) 2019-02-20 2024-04-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於3d nand應用中之插塞填充沉積之設備及方法
TWI842826B (zh) 2019-02-22 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
KR102858005B1 (ko) 2019-03-08 2025-09-09 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
KR102782593B1 (ko) 2019-03-08 2025-03-14 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
JP2020167398A (ja) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー ドアオープナーおよびドアオープナーが提供される基材処理装置
KR102809999B1 (ko) 2019-04-01 2025-05-19 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
KR102897355B1 (ko) 2019-04-19 2025-12-08 에이에스엠 아이피 홀딩 비.브이. 층 형성 방법 및 장치
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR102929471B1 (ko) 2019-05-07 2026-02-20 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR102869364B1 (ko) 2019-05-07 2025-10-10 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR102929472B1 (ko) 2019-05-10 2026-02-20 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP7612342B2 (ja) 2019-05-16 2025-01-14 エーエスエム・アイピー・ホールディング・ベー・フェー ウェハボートハンドリング装置、縦型バッチ炉および方法
JP7598201B2 (ja) 2019-05-16 2024-12-11 エーエスエム・アイピー・ホールディング・ベー・フェー ウェハボートハンドリング装置、縦型バッチ炉および方法
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 가스 감지기를 포함하는 기상 반응기 시스템
KR102918757B1 (ko) 2019-06-10 2026-01-28 에이에스엠 아이피 홀딩 비.브이. 석영 에피택셜 챔버를 세정하는 방법
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR102911421B1 (ko) 2019-07-03 2026-01-12 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646B (zh) 2019-07-10 2026-02-10 Asmip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR102895115B1 (ko) 2019-07-16 2025-12-03 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR102860110B1 (ko) 2019-07-17 2025-09-16 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
KR102955799B1 (ko) 2019-07-17 2026-04-21 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
TWI839544B (zh) 2019-07-19 2024-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成形貌受控的非晶碳聚合物膜之方法
KR102903090B1 (ko) 2019-07-19 2025-12-19 에이에스엠 아이피 홀딩 비.브이. 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법
TWI851767B (zh) 2019-07-29 2024-08-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法
CN112309899B (zh) 2019-07-30 2025-11-14 Asmip私人控股有限公司 基板处理设备
CN112309900B (zh) 2019-07-30 2025-11-04 Asmip私人控股有限公司 基板处理设备
KR102971074B1 (ko) 2019-07-30 2026-05-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 방법
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US12622218B2 (en) 2019-07-31 2026-05-05 Asm Ip Holding B.V. Cassette lid opening device
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
CN112323048B (zh) 2019-08-05 2024-02-09 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
CN112342526A (zh) 2019-08-09 2021-02-09 Asm Ip私人控股有限公司 包括冷却装置的加热器组件及其使用方法
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP7810514B2 (ja) 2019-08-21 2026-02-03 エーエスエム・アイピー・ホールディング・ベー・フェー 成膜原料混合ガス生成装置及び成膜装置
KR102983146B1 (ko) 2019-08-22 2026-06-26 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
KR102928101B1 (ko) 2019-08-23 2026-02-13 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
JP7023905B2 (ja) * 2019-08-30 2022-02-22 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム
CN112442674A (zh) 2019-09-03 2021-03-05 Asm Ip私人控股有限公司 用于沉积硫族化物膜的方法和设备以及包括膜的结构
JP2021040060A (ja) * 2019-09-04 2021-03-11 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理システム、およびプログラム
KR102806450B1 (ko) 2019-09-04 2025-05-12 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR102733104B1 (ko) 2019-09-05 2024-11-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US12469693B2 (en) 2019-09-17 2025-11-11 Asm Ip Holding B.V. Method of forming a carbon-containing layer and structure including the layer
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TWI846953B (zh) 2019-10-08 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理裝置
TWI925822B (zh) 2019-10-08 2026-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體注入系統、及將材料沉積於反應室內之基板表面上的方法
KR102948143B1 (ko) 2019-10-08 2026-04-07 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
KR102879443B1 (ko) 2019-10-10 2025-11-03 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR102845724B1 (ko) 2019-10-21 2025-08-13 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR102960940B1 (ko) 2019-10-25 2026-05-04 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR102890638B1 (ko) 2019-11-05 2025-11-25 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR102861314B1 (ko) 2019-11-20 2025-09-17 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN112951697B (zh) 2019-11-26 2025-07-29 Asmip私人控股有限公司 基板处理设备
CN120432376A (zh) 2019-11-29 2025-08-05 Asm Ip私人控股有限公司 基板处理设备
CN120998766A (zh) 2019-11-29 2025-11-21 Asm Ip私人控股有限公司 基板处理设备
JP7527928B2 (ja) 2019-12-02 2024-08-05 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN112992667A (zh) 2019-12-17 2021-06-18 Asm Ip私人控股有限公司 形成氮化钒层的方法和包括氮化钒层的结构
KR102943768B1 (ko) 2019-12-19 2026-03-26 에이에스엠 아이피 홀딩 비.브이. 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
KR102974179B1 (ko) 2020-01-06 2026-06-05 에이에스엠 아이피 홀딩 비.브이. 채널형 리프트 핀
TWI901623B (zh) 2020-01-06 2025-10-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體供應總成以及閥板總成
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102882467B1 (ko) 2020-01-16 2025-11-05 에이에스엠 아이피 홀딩 비.브이. 고 종횡비 피처를 형성하는 방법
US12142479B2 (en) 2020-01-17 2024-11-12 Asm Ip Holding B.V. Formation of SiOCN thin films
US12341005B2 (en) 2020-01-17 2025-06-24 Asm Ip Holding B.V. Formation of SiCN thin films
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TWI889744B (zh) 2020-01-29 2025-07-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 污染物捕集系統、及擋板堆疊
TWI871421B (zh) 2020-02-03 2025-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 包括釩或銦層的裝置、結構及其形成方法、系統
KR20210100010A (ko) 2020-02-04 2021-08-13 에이에스엠 아이피 홀딩 비.브이. 대형 물품의 투과율 측정을 위한 방법 및 장치
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
KR102916725B1 (ko) 2020-02-13 2026-01-23 에이에스엠 아이피 홀딩 비.브이. 수광 장치를 포함하는 기판 처리 장치 및 수광 장치의 교정 방법
TWI915339B (zh) 2020-02-13 2026-02-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體分配總成、噴淋板總成、及調整至反應室之氣體的傳導率之方法
TWI855223B (zh) 2020-02-17 2024-09-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於生長磷摻雜矽層之方法
US12532675B2 (en) 2020-02-21 2026-01-20 Lam Research Corporation Core removal
TWI895326B (zh) 2020-02-28 2025-09-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 專用於零件清潔的系統
TWI914330B (zh) 2020-03-04 2026-02-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 反應器系統、及對準夾具
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
KR102775390B1 (ko) 2020-03-12 2025-02-28 에이에스엠 아이피 홀딩 비.브이. 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법
US12173404B2 (en) 2020-03-17 2024-12-24 Asm Ip Holding B.V. Method of depositing epitaxial material, structure formed using the method, and system for performing the method
JP7254044B2 (ja) * 2020-03-25 2023-04-07 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
KR102755229B1 (ko) 2020-04-02 2025-01-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TWI887376B (zh) 2020-04-03 2025-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體裝置的製造方法
TWI888525B (zh) 2020-04-08 2025-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
KR102970066B1 (ko) 2020-04-15 2026-05-28 에이에스엠 아이피 홀딩 비.브이. 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
TW202143328A (zh) 2020-04-21 2021-11-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於調整膜應力之方法
TWI913262B (zh) 2020-04-24 2026-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法
JP7816915B2 (ja) 2020-04-24 2026-02-18 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化バナジウム含有層を形成する方法および窒化バナジウム含有層を含む構造体
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
TWI921332B (zh) 2020-04-24 2026-04-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括硼化釩及磷化釩層的結構之方法、所形成之結構與裝置、及用以製造所述裝置之系統
TWI887400B (zh) 2020-04-24 2025-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於穩定釩化合物之方法及設備
KR102783898B1 (ko) 2020-04-29 2025-03-18 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
TWI907417B (zh) 2020-05-04 2025-12-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體處理系統
JP7736446B2 (ja) 2020-05-07 2025-09-09 エーエスエム・アイピー・ホールディング・ベー・フェー 同調回路を備える反応器システム
KR102788543B1 (ko) 2020-05-13 2025-03-27 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
TWI915365B (zh) 2020-05-15 2026-02-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統
TW202614152A (zh) 2020-05-19 2026-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備
KR20210145079A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 기판을 처리하기 위한 플랜지 및 장치
KR102795476B1 (ko) 2020-05-21 2025-04-11 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
TWI873343B (zh) 2020-05-22 2025-02-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基材上形成薄膜之反應系統
KR20210146802A (ko) 2020-05-26 2021-12-06 에이에스엠 아이피 홀딩 비.브이. 붕소 및 갈륨을 함유한 실리콘 게르마늄 층을 증착하는 방법
TWI876048B (zh) 2020-05-29 2025-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202212620A (zh) 2020-06-02 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法
TW202618032A (zh) 2020-06-16 2026-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 磊晶生長摻硼矽鍺層之方法和系統及包括摻硼矽鍺層之場效電晶體
TWI908816B (zh) 2020-06-24 2025-12-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TWI873359B (zh) 2020-06-30 2025-02-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
US12431354B2 (en) 2020-07-01 2025-09-30 Asm Ip Holding B.V. Silicon nitride and silicon oxide deposition methods using fluorine inhibitor
TW202202649A (zh) 2020-07-08 2022-01-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
KR20220010438A (ko) 2020-07-17 2022-01-25 에이에스엠 아이피 홀딩 비.브이. 포토리소그래피에 사용하기 위한 구조체 및 방법
TWI878570B (zh) 2020-07-20 2025-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
KR20220011092A (ko) 2020-07-20 2022-01-27 에이에스엠 아이피 홀딩 비.브이. 전이 금속층을 포함하는 구조체를 형성하기 위한 방법 및 시스템
US12322591B2 (en) 2020-07-27 2025-06-03 Asm Ip Holding B.V. Thin film deposition process
KR20220020210A (ko) 2020-08-11 2022-02-18 에이에스엠 아이피 홀딩 비.브이. 기판 상에 티타늄 알루미늄 카바이드 막 구조체 및 관련 반도체 구조체를 증착하는 방법
KR102915124B1 (ko) 2020-08-14 2026-01-19 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
TWI911263B (zh) 2020-08-25 2026-01-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 清潔基板的方法、選擇性沉積的方法、及反應器系統
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
TWI911265B (zh) 2020-08-27 2026-01-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成圖案化結構的方法、操控機械特性的方法、及裝置結構
TWI904232B (zh) 2020-09-10 2025-11-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 沉積間隙填充流體之方法及相關系統和裝置
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
KR20220036866A (ko) 2020-09-16 2022-03-23 에이에스엠 아이피 홀딩 비.브이. 실리콘 산화물 증착 방법
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TWI889903B (zh) 2020-09-25 2025-07-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
KR20220045900A (ko) 2020-10-06 2022-04-13 에이에스엠 아이피 홀딩 비.브이. 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치
CN114388427A (zh) 2020-10-06 2022-04-22 Asm Ip私人控股有限公司 用于在特征的侧壁上形成氮化硅的方法和系统
CN114293174A (zh) 2020-10-07 2022-04-08 Asm Ip私人控股有限公司 气体供应单元和包括气体供应单元的衬底处理设备
TWI918732B (zh) 2020-10-14 2026-03-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
KR102873665B1 (ko) 2020-10-15 2025-10-17 에이에스엠 아이피 홀딩 비.브이. 반도체 소자의 제조 방법, 및 ether-cat을 사용하는 기판 처리 장치
KR102943887B1 (ko) 2020-10-16 2026-03-25 에이에스엠 아이피 홀딩 비.브이. 임계 전압 제어용 구조체를 형성하는 방법
KR20220053482A (ko) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202229620A (zh) 2020-11-12 2022-08-01 特文特大學 沉積系統、用於控制反應條件之方法、沉積方法
TW202229795A (zh) 2020-11-23 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 具注入器之基板處理設備
TW202235649A (zh) 2020-11-24 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充間隙之方法與相關之系統及裝置
KR20220076343A (ko) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터
KR20220077875A (ko) 2020-12-02 2022-06-09 에이에스엠 아이피 홀딩 비.브이. 샤워헤드 어셈블리용 세정 고정구
US12255053B2 (en) 2020-12-10 2025-03-18 Asm Ip Holding B.V. Methods and systems for depositing a layer
TWI916460B (zh) 2020-12-14 2026-03-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成臨限電壓控制用之結構的方法
CN114639631A (zh) 2020-12-16 2022-06-17 Asm Ip私人控股有限公司 跳动和摆动测量固定装置
CN114649247A (zh) 2020-12-18 2022-06-21 Asm Ip私人控股有限公司 具有可旋转工作台的晶片处理设备
TW202226899A (zh) 2020-12-22 2022-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 具匹配器的電漿處理裝置
TWI922548B (zh) 2020-12-22 2026-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 前驅物膠囊、前驅物容器、氣相沉積總成、及將固態前驅物裝載至前驅物容器中之方法
TWI922546B (zh) 2020-12-22 2026-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
US20220220132A1 (en) * 2020-12-29 2022-07-14 American Air Liquide, Inc. Organosilane precursors for ald/cvd/sod of silicon-containing film applications
KR20220097266A (ko) 2020-12-30 2022-07-07 에이에스엠 아이피 홀딩 비.브이. 재료 증착을 위한 조성물, 합성 방법 및 용도
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
USD1099184S1 (en) 2021-11-29 2025-10-21 Asm Ip Holding B.V. Weighted lift pin
USD1060598S1 (en) 2021-12-03 2025-02-04 Asm Ip Holding B.V. Split showerhead cover
KR20240158811A (ko) 2023-04-27 2024-11-05 (주)디엔에프 플루오로디실라잔 화합물, 이를 포함하는 실리콘 함유 박막 증착용 조성물 및 이를 이용한 실리콘 함유 박막의 제조방법
KR102971998B1 (ko) 2024-03-14 2026-06-02 (주)디엔에프 사이클로실라잔 화합물 및 이를 이용한 실리콘 함유박막의 제조방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6065712A (ja) * 1983-09-20 1985-04-15 Toshiba Corp 酸化けい素被膜の形成方法
JPH03286531A (ja) * 1990-04-02 1991-12-17 Kawasaki Steel Corp シリコン酸化膜の形成方法
US5480818A (en) * 1992-02-10 1996-01-02 Fujitsu Limited Method for forming a film and method for manufacturing a thin film transistor

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5949687B2 (ja) * 1977-05-30 1984-12-04 株式会社東芝 半導体装置
US4467238A (en) * 1981-09-03 1984-08-21 General Electric Company High-pressure sodium lamp with improved IR reflector
JPH0382769A (ja) * 1989-08-28 1991-04-08 Dainippon Screen Mfg Co Ltd シリコン酸化膜形成方法およびその装置
US5187241A (en) * 1990-05-15 1993-02-16 International Business Machines Corporation Isoimide modifications of a polyimide and reaction thereof with nucleophiles
JP2828152B2 (ja) * 1991-08-13 1998-11-25 富士通 株式会社 薄膜形成方法、多層構造膜及びシリコン薄膜トランジスタの形成方法
RU2082258C1 (ru) * 1991-08-14 1997-06-20 Сименс АГ Схемная структура с по меньшей мере одним конденсатором и способ ее изготовления
JPH05299412A (ja) * 1992-04-23 1993-11-12 Kojundo Chem Lab Co Ltd 半導体装置のシリコン酸化膜の製造法
MX9303141A (es) 1992-05-28 1994-04-29 Polar Materials Inc Metodos y aparatos para depositar recubrimientos de barrera.
JPH0680413A (ja) * 1992-08-27 1994-03-22 Toshiro Maruyama 二酸化珪素膜の化学気相成長法
JP3080809B2 (ja) * 1993-04-30 2000-08-28 シャープ株式会社 半導体装置の製造方法
US5459108A (en) * 1992-10-06 1995-10-17 Sharp Kabushiki Kaisha Normal pressure CVD process for manufacture of a semiconductor device through reaction of a nitrogen containing organic source with ozone
JP3124861B2 (ja) * 1993-03-24 2001-01-15 富士通株式会社 薄膜成長方法および半導体装置の製造方法
FI92897C (fi) * 1993-07-20 1995-01-10 Planar International Oy Ltd Menetelmä kerrosrakenteen valmistamiseksi elektroluminenssikomponentteja varten
JPH0758100A (ja) * 1993-08-10 1995-03-03 Kawasaki Steel Corp 半導体装置の製造方法
JP3618110B2 (ja) 1993-08-30 2005-02-09 株式会社デンソー エレクトロルミネッセンス素子の製法
DE4437752A1 (de) * 1994-10-21 1996-04-25 Basf Ag Verfahren zur Herstellung von siliciumoxidbeschichteten Feststoffteilchen
FI100409B (fi) * 1994-11-28 1997-11-28 Asm Int Menetelmä ja laitteisto ohutkalvojen valmistamiseksi
FI97731C (fi) * 1994-11-28 1997-02-10 Mikrokemia Oy Menetelmä ja laite ohutkalvojen valmistamiseksi
US6006763A (en) 1995-01-11 1999-12-28 Seiko Epson Corporation Surface treatment method
US5536673A (en) * 1995-07-26 1996-07-16 United Microelectronics Corporation Method for making dynamic random access memory (DRAM) cells having large capacitor electrode plates for increased capacitance
US5603750A (en) * 1995-08-14 1997-02-18 Minnesota Mining And Manufacturing Company Fluorocarbon fluids as gas carriers to aid in precious and base metal heap leaching operations
US5891744A (en) * 1996-01-29 1999-04-06 Micron Technology, Inc. Method of monitoring a process of manufacturing a semiconductor wafer including hemispherical grain polysilicon
US6313035B1 (en) * 1996-05-31 2001-11-06 Micron Technology, Inc. Chemical vapor deposition using organometallic precursors
JP3317387B2 (ja) * 1996-06-03 2002-08-26 シャープ株式会社 アクティブマトリクス基板およびその製造方法
US6342277B1 (en) * 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US5916365A (en) * 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
US5879459A (en) * 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
WO1998044544A1 (en) * 1997-04-03 1998-10-08 W.L. Gore & Associates, Inc. Low dielectric constant material with improved dielectric strength
US6090442A (en) * 1997-04-14 2000-07-18 University Technology Corporation Method of growing films on substrates at room temperatures using catalyzed binary reaction sequence chemistry
US5972430A (en) 1997-11-26 1999-10-26 Advanced Technology Materials, Inc. Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer
TW439151B (en) 1997-12-31 2001-06-07 Samsung Electronics Co Ltd Method for forming conductive layer using atomic layer deposition process
KR100269328B1 (ko) * 1997-12-31 2000-10-16 윤종용 원자층 증착 공정을 이용하는 도전층 형성방법
FR2774775B1 (fr) * 1998-02-09 2000-04-07 Inst Francais Du Petrole Dispositif d'emission sismique immergeable et methode pour sa mise en oeuvre
EP1148052A3 (en) * 1998-10-09 2003-10-15 Mitsui Chemicals, Inc. 1,3-dialkyl-2-imidazolidinones and a manufacturing process therefor
KR100327328B1 (ko) * 1998-10-13 2002-05-09 윤종용 부분적으로다른두께를갖는커패시터의유전막형성방버뵤
US6350199B1 (en) * 1999-03-16 2002-02-26 International Game Technology Interactive gaming machine and method with customized game screen presentation
US6613383B1 (en) * 1999-06-21 2003-09-02 Regents Of The University Of Colorado Atomic layer controlled deposition on particle surfaces
US6203613B1 (en) * 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
FI118804B (fi) * 1999-12-03 2008-03-31 Asm Int Menetelmä oksidikalvojen kasvattamiseksi
US6780704B1 (en) * 1999-12-03 2004-08-24 Asm International Nv Conformal thin films over textured capacitor electrodes
US6537613B1 (en) 2000-04-10 2003-03-25 Air Products And Chemicals, Inc. Process for metal metalloid oxides and nitrides with compositional gradients
US6849305B2 (en) 2000-04-28 2005-02-01 Ekc Technology, Inc. Photolytic conversion process to form patterned amorphous film
WO2001099166A1 (en) 2000-06-08 2001-12-27 Genitech Inc. Thin film forming method
US6969539B2 (en) * 2000-09-28 2005-11-29 President And Fellows Of Harvard College Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide
JP4921652B2 (ja) * 2001-08-03 2012-04-25 エイエスエム インターナショナル エヌ．ヴェー． イットリウム酸化物およびランタン酸化物薄膜を堆積する方法
JP2003082464A (ja) * 2001-09-10 2003-03-19 Mitsubishi Electric Corp 化学気相成長法用液体原料、化学気相成長法による膜形成方法、および、化学気相成長装置
DE10208450B4 (de) * 2002-02-27 2004-09-16 Infineon Technologies Ag Verfahren zum Abscheiden dünner Schichten mittels ALD/CVD-Prozessen in Verbindung mit schnellen thermischen Prozessen
US7045170B1 (en) * 2002-04-03 2006-05-16 Sandia Corporation Anti-stiction coating for microelectromechanical devices
US7045430B2 (en) 2002-05-02 2006-05-16 Micron Technology Inc. Atomic layer-deposited LaAlO3 films for gate dielectrics
TW200408015A (en) 2002-08-18 2004-05-16 Asml Us Inc Atomic layer deposition of high K metal silicates
JP4212435B2 (ja) * 2003-08-29 2009-01-21 株式会社東芝 半導体装置およびその製造方法
US6818517B1 (en) * 2003-08-29 2004-11-16 Asm International N.V. Methods of depositing two or more layers on a substrate in situ
US20050252449A1 (en) * 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US20060211259A1 (en) * 2005-03-21 2006-09-21 Maes Jan W Silicon oxide cap over high dielectric constant films
US8501637B2 (en) * 2007-12-21 2013-08-06 Asm International N.V. Silicon dioxide thin films by ALD

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6065712A (ja) * 1983-09-20 1985-04-15 Toshiba Corp 酸化けい素被膜の形成方法
JPH03286531A (ja) * 1990-04-02 1991-12-17 Kawasaki Steel Corp シリコン酸化膜の形成方法
US5480818A (en) * 1992-02-10 1996-01-02 Fujitsu Limited Method for forming a film and method for manufacturing a thin film transistor

Non-Patent Citations (9)

* Cited by examiner, † Cited by third party
Title
DATABASE WPI Week 198521, Derwent World Patents Index; AN 1985-126548, XP002953016 *
DATABASE WPI Week 199205, Derwent World Patents Index; AN 1992-038777, XP002953015 *
J.W. KLAUS ET AL.: "Atomic layer deposition of SiO2 using catalyzed and uncatalyzed self-limiting surface reactions", SURFACE REVIEW AND LETTERS, vol. 6, no. 3 & 4, 1999, pages 435 - 448, XP000972688 *
KEI-ICHI YAMAGUCHI ET AL.: "Atomic-layer chemical-vapor-deposition of silicon dioxide films with an extremely low hydrogen content", APPLIED SURFACE SCIENCE, 1998, pages 202 - 207, XP002938103 *
LAURI NIINISTO ET AL.: "Synthesis of oxide thin films and overlayers by atomic layer epitaxy for advanced applications", MATERIALS SCIENCE AND ENGINEERING, vol. B41, 1996, pages 23 - 29, XP002938107 *
MICHAEL I. WISE ET AL.: "Diethyldiethoxysilane as a new precursor for SiO2 growth on silicon", MAT. RES. SOC. SYMP. PROC., vol. 334, 1994, pages 37 - 43, XP002938106 *
PATENT ABSTRACTS OF JAPAN *
S.M. GEORGE ET AL.: "Atomic layer controlled deposition of SiO2 and A12O3 using ABAB... binary reaction sequence chemistry", APPLIED SURFACE SCIENCE, vol. 82/83, 1994, pages 460 - 467, XP002938105 *
S.M. GEORGE ET AL.: "Surface chemistry for atomic layer growth", J. PHYS. CHEM., vol. 100, 1996, pages 13121 - 13131, XP002938104 *

Cited By (107)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7501343B2 (en) 2000-06-27 2009-03-10 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7208413B2 (en) 2000-06-27 2007-04-24 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7501344B2 (en) 2000-06-27 2009-03-10 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7033922B2 (en) 2000-06-28 2006-04-25 Applied Materials. Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7465666B2 (en) 2000-06-28 2008-12-16 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7115494B2 (en) 2000-06-28 2006-10-03 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7235486B2 (en) 2000-06-28 2007-06-26 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US6855368B1 (en) 2000-06-28 2005-02-15 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US9905414B2 (en) 2000-09-28 2018-02-27 President And Fellows Of Harvard College Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide
WO2002081691A3 (en) * 2000-11-20 2003-07-03 Tularik Inc Abcg5 and abcg8: compositions and methods of use
US6821750B2 (en) 2000-11-20 2004-11-23 Tularik Inc. ABCG8 vectors, host cells, and method of making
US7022948B2 (en) 2000-12-29 2006-04-04 Applied Materials, Inc. Chamber for uniform substrate heating
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US6825447B2 (en) 2000-12-29 2004-11-30 Applied Materials, Inc. Apparatus and method for uniform substrate heating and contaminate collection
US6765178B2 (en) 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6811814B2 (en) 2001-01-16 2004-11-02 Applied Materials, Inc. Method for growing thin films by catalytic enhancement
US7094680B2 (en) 2001-02-02 2006-08-22 Applied Materials, Inc. Formation of a tantalum-nitride layer
US9012334B2 (en) 2001-02-02 2015-04-21 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US9587310B2 (en) 2001-03-02 2017-03-07 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6660126B2 (en) 2001-03-02 2003-12-09 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US9139906B2 (en) 2001-03-06 2015-09-22 Asm America, Inc. Doping with ALD technology
US7201803B2 (en) 2001-03-07 2007-04-10 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US6541280B2 (en) 2001-03-20 2003-04-01 Motorola, Inc. High K dielectric film
US6770923B2 (en) 2001-03-20 2004-08-03 Freescale Semiconductor, Inc. High K dielectric film
WO2002093662A3 (en) * 2001-05-14 2003-05-15 Opsys Ltd A method of providing a layer including a metal or silicon or germanium and oxygen on a surface
EP1262576A1 (en) * 2001-05-30 2002-12-04 Sandvik Aktiebolag CVD Al2O3 coated cutting tool
US6855413B2 (en) 2001-05-30 2005-02-15 Sandvik Ab Oxide coated cutting tool
US6673393B2 (en) 2001-05-30 2004-01-06 Sandvik Ab Oxide coated cutting tool
DE10137088B4 (de) * 2001-06-20 2008-03-06 Samsung Electronics Co., Ltd., Suwon Verfahren zum Ausbilden von siliziumhaltigen Dünnschichten mittels Atomschichtabscheidung (Atomic Layer Deposition) unter Verwendung von Aminosilanen
JP3476801B2 (ja) 2001-06-20 2003-12-10 三星電子株式会社 トリスジメチルアミノシランを用いた原子層蒸着によるシリコン含有固体薄膜の製造方法
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US10280509B2 (en) 2001-07-16 2019-05-07 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US7905959B2 (en) 2001-07-16 2011-03-15 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
JP2003055093A (ja) * 2001-08-03 2003-02-26 Asm Microchemistry Oy イットリウム酸化物およびランタン酸化物薄膜を堆積する方法
US7352048B2 (en) 2001-09-26 2008-04-01 Applied Materials, Inc. Integration of barrier layer and seed layer
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US7494908B2 (en) 2001-09-26 2009-02-24 Applied Materials, Inc. Apparatus for integration of barrier layer and seed layer
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7780788B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6729824B2 (en) 2001-12-14 2004-05-04 Applied Materials, Inc. Dual robot processing system
US6620670B2 (en) 2002-01-18 2003-09-16 Applied Materials, Inc. Process conditions and precursors for atomic layer deposition (ALD) of AL2O3
US7094685B2 (en) 2002-01-26 2006-08-22 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US7473638B2 (en) 2002-01-26 2009-01-06 Applied Materials, Inc. Plasma-enhanced cyclic layer deposition process for barrier layers
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6827978B2 (en) 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US7429516B2 (en) 2002-02-26 2008-09-30 Applied Materials, Inc. Tungsten nitride atomic layer deposition processes
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7115499B2 (en) 2002-02-26 2006-10-03 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US6846516B2 (en) 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US7396565B2 (en) 2002-04-08 2008-07-08 Applied Materials, Inc. Multiple precursor cyclical deposition system
US6720027B2 (en) 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US6875271B2 (en) 2002-04-09 2005-04-05 Applied Materials, Inc. Simultaneous cyclical deposition in different processing regions
US6858547B2 (en) 2002-06-14 2005-02-22 Applied Materials, Inc. System and method for forming a gate dielectric
US7531468B2 (en) 2002-06-14 2009-05-12 Applied Materials, Inc. System and method for forming a gate dielectric
US7304004B2 (en) 2002-06-14 2007-12-04 Applied Materials, Inc. System and method for forming a gate dielectric
US7569500B2 (en) 2002-06-14 2009-08-04 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US7067439B2 (en) 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US7294208B2 (en) 2002-07-29 2007-11-13 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US7300870B2 (en) 2002-08-28 2007-11-27 Micron Technology, Inc. Systems and methods of forming refractory metal nitride layers using organic amines
US7943501B2 (en) 2002-08-28 2011-05-17 Micron Technology, Inc. Systems and methods of forming tantalum silicide layers
US7368402B2 (en) 2002-08-28 2008-05-06 Micron Technology, Inc. Systems and methods for forming tantalum oxide layers and tantalum precursor compounds
US7858815B2 (en) 2002-08-28 2010-12-28 Micron Technology, Inc. Systems and methods for forming tantalum oxide layers and tantalum precursor compounds
US7544615B2 (en) 2002-08-28 2009-06-09 Micron Technology, Inc. Systems and methods of forming refractory metal nitride layers using organic amines
US7560393B2 (en) 2002-08-28 2009-07-14 Micron Technology, Inc. Systems and methods of forming refractory metal nitride layers using disilazanes
US7196007B2 (en) 2002-08-28 2007-03-27 Micron Technology, Inc. Systems and methods of forming refractory metal nitride layers using disilazanes
US7645339B2 (en) 2002-10-18 2010-01-12 Applied Materials, Inc. Silicon-containing layer deposition with silicon compounds
US7540920B2 (en) 2002-10-18 2009-06-02 Applied Materials, Inc. Silicon-containing layer deposition with silicon compounds
US7758697B2 (en) 2002-10-18 2010-07-20 Applied Materials, Inc. Silicon-containing layer deposition with silicon compounds
US7097886B2 (en) 2002-12-13 2006-08-29 Applied Materials, Inc. Deposition process for high aspect ratio trenches
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7547952B2 (en) 2003-04-04 2009-06-16 Applied Materials, Inc. Method for hafnium nitride deposition
US7118779B2 (en) 2003-05-09 2006-10-10 Asm America, Inc. Reactor surface passivation through chemical deactivation
US7799135B2 (en) 2003-05-09 2010-09-21 Asm America, Inc. Reactor surface passivation through chemical deactivation
US7914847B2 (en) 2003-05-09 2011-03-29 Asm America, Inc. Reactor surface passivation through chemical deactivation
WO2004102648A3 (en) * 2003-05-09 2005-03-24 Asm Inc Reactor surface passivation through chemical deactivation
US7595263B2 (en) 2003-06-18 2009-09-29 Applied Materials, Inc. Atomic layer deposition of barrier materials
US7399388B2 (en) 2003-07-25 2008-07-15 Applied Materials, Inc. Sequential gas flow oxide deposition technique
US7517775B2 (en) 2003-10-10 2009-04-14 Applied Materials, Inc. Methods of selective deposition of heavily doped epitaxial SiGe
US7087497B2 (en) 2004-03-04 2006-08-08 Applied Materials Low-thermal-budget gapfill process
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US8323754B2 (en) 2004-05-21 2012-12-04 Applied Materials, Inc. Stabilization of high-k dielectric materials
US7560352B2 (en) 2004-12-01 2009-07-14 Applied Materials, Inc. Selective deposition
US7521365B2 (en) 2004-12-01 2009-04-21 Applied Materials, Inc. Selective epitaxy process with alternating gas supply
US7572715B2 (en) 2004-12-01 2009-08-11 Applied Materials, Inc. Selective epitaxy process with alternating gas supply
US7312128B2 (en) 2004-12-01 2007-12-25 Applied Materials, Inc. Selective epitaxy process with alternating gas supply
US7235492B2 (en) 2005-01-31 2007-06-26 Applied Materials, Inc. Low temperature etchant for treatment of silicon-containing surfaces
US7402534B2 (en) 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
US7563715B2 (en) 2005-12-05 2009-07-21 Asm International N.V. Method of producing thin films
US7674337B2 (en) 2006-04-07 2010-03-09 Applied Materials, Inc. Gas manifolds for use during epitaxial film formation
US7588980B2 (en) 2006-07-31 2009-09-15 Applied Materials, Inc. Methods of controlling morphology during epitaxial layer formation
US7972977B2 (en) 2006-10-05 2011-07-05 Asm America, Inc. ALD of metal silicate films
US8563444B2 (en) 2006-10-05 2013-10-22 Asm America, Inc. ALD of metal silicate films
US8187973B2 (en) 2008-04-10 2012-05-29 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device and the semiconductor device
US9418890B2 (en) 2008-09-08 2016-08-16 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
US8293658B2 (en) 2010-02-17 2012-10-23 Asm America, Inc. Reactive site deactivation against vapor deposition
US9223203B2 (en) 2011-07-08 2015-12-29 Asm International N.V. Microcontact printed films as an activation layer for selective atomic layer deposition
US11574838B2 (en) 2017-11-21 2023-02-07 Watlow Electric Manufacturing Company Ceramic pedestal having atomic protective layer

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