US20160365407A1 - Capacitor With 3D NAND Memory - Google Patents

Capacitor With 3D NAND Memory Download PDF

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Publication number
US20160365407A1
US20160365407A1 US14/739,717 US201514739717A US2016365407A1 US 20160365407 A1 US20160365407 A1 US 20160365407A1 US 201514739717 A US201514739717 A US 201514739717A US 2016365407 A1 US2016365407 A1 US 2016365407A1
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Prior art keywords
capacitor terminal
strips
stack
terminal strips
conductive
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Abandoned
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US14/739,717
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English (en)
Inventor
Hang-Ting Lue
Teng-Hao Yeh
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Macronix International Co Ltd
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Macronix International Co Ltd
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Priority claimed from US13/049,303 external-priority patent/US8598032B2/en
Priority claimed from US13/114,931 external-priority patent/US8383512B2/en
Application filed by Macronix International Co Ltd filed Critical Macronix International Co Ltd
Assigned to MACRONIX INTERNATIONAL CO., LTD. reassignment MACRONIX INTERNATIONAL CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LUE, HANG-TING, YEH, TENG-HAO
Priority to CN201510498244.1A priority Critical patent/CN106252353B/zh
Priority to TW104126756A priority patent/TWI566447B/zh
Priority to US15/279,203 priority patent/US10388720B2/en
Priority to US15/285,808 priority patent/US9716137B1/en
Publication of US20160365407A1 publication Critical patent/US20160365407A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H01L28/60—
    • H01L27/0629—
    • H01L27/11526—
    • H01L27/11556—
    • H01L27/11573—
    • H01L27/11582—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/50—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the boundary region between the core region and the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

Definitions

  • Capacitors are electronic devices including two terminals separated by insulating material. When there is a voltage difference between the two terminals, an electric field is created between the two terminals thereby storing electrical energy. The amount of electrical charge that can be stored on a capacitor per volt across the terminals is referred to as capacitance. Terminals are typically in the form of plates of various shapes, surface contours and sizes. The capacitance is generally a function of the dielectric constant ⁇ of the dielectric layer, directly proportional to the area of the opposed terminals and inversely proportional to the distance between the terminals. Placing two or more capacitors in parallel results in a total capacitance of the combination that is equal to the sum of the capacitances of the individual capacitors.
  • a stack of capacitors connected in parallel has a low area footprint from the bottom capacitor in the stack of capacitors, and yet a large capacitance from the summed capacitance of the capacitors in the stack connected in parallel.
  • the stacked capacitor is fabricated by many steps which results in increased complexity and cost of the overall integrated circuit. It would be desirable to take advantage of the low area footprint, large capacitance of the stacked capacitor, while minimizing additional fabrication complexity and cost resulting from the addition of the stacked capacitor to an integrated circuit.
  • Various aspects of the technology involve integrated circuits having both a 3D NAND memory array with a stack of conductive strips, and a stacked capacitor with a stack of capacitor terminal strips. Because the integrated circuit is already being fabricated to include a 3D NAND array, overall complexity is changed little from fabricating stacks of conductive strips for a capacitor in addition to the NAND memory array.
  • One aspect of the technology includes an integrated circuit with a substrate, a 3D NAND memory array with a stack of conductive strips, and a stacked capacitor with a stack of capacitor terminal strips. Multiple conductive strips in the stack of conductive strips, and multiple capacitor terminal strips of the stack of capacitor terminal strips, share a same plurality of vertical distances from the substrate.
  • the stack of conductive strips is at least one of: transistor channels in the 3D NAND memory array, conductors routing signals that select memory cells in the 3D NAND memory array, and conductors routing output from the 3D NAND memory array.
  • the 3D NAND memory array is a vertical gate memory array, and the conductive strips in the stack are NAND transistor channels in the vertical gate memory array.
  • the 3D NAND memory array is a vertical channel memory array, and the conductive strips in the stack are word lines in the vertical channel memory array.
  • the stack of capacitor terminal strips includes a first plurality of capacitor terminal strips alternating with a second plurality of capacitor terminal strips.
  • the first plurality of capacitor terminal strips are electrically connected together and the second plurality of capacitor terminal strips are electrically connected together.
  • the stack of capacitor terminal strips has a first end and a second end. Multiple capacitor terminal strips in the stack of capacitor terminal strips are electrically connected together at the first end, and multiple capacitor terminal strips in the stack of capacitor terminal strips are electrically connected together at the second end.
  • the embodiment further comprises a conductive plug electrically connected to at least one of the capacitor terminal strips at an intermediate point in between the first end and the second end.
  • the stack of capacitor terminal strips is one of a plurality of stacks of capacitor terminal strips having lengths between first ends and second ends.
  • the plurality of stacks of capacitor terminal strips include the first plurality of capacitor terminal strips alternating with the second plurality of capacitor terminal strips.
  • the first plurality of capacitor terminal strips in the plurality of stacks of capacitor terminal strips are electrically coupled together via the first ends and at intermediate points in between the first ends and second ends.
  • FIG. 1 Another aspect of the technology is a computer readable medium comprising a layout for an integrated circuit including designs for a plurality of masks.
  • the integrated circuit includes a 3D NAND memory array with a stack of conductive strips as described herein, and a capacitor with a stack of capacitor terminal strips as described herein. Multiple masks in the plurality of masks each define at least one conductive strip in the stack of conductive strips and at least one capacitor terminal strip in the stack of capacitor terminal strips.
  • a further aspect of the technology is a method of making an integrated circuit comprises:
  • FIG. 1 is an end view of stacks of conductive material for both a capacitor and a 3D NAND array on a same substrate.
  • FIG. 2 is a side view of a capacitor with a stack of conductive material from FIG. 1 .
  • FIGS. 3 and 4 are circuit diagrams of different ways to interconnect individual capacitors in a stack of conductive material, resulting in different overall capacitances of the stack of conductive material as a whole.
  • FIG. 5 is a perspective illustration of a three-dimensional, vertical gate NAND-flash memory device with stacks of conductive material from FIG. 1 .
  • FIG. 6 is a perspective illustration of an alternative three-dimensional, vertical channel NAND-flash memory device with stacks of conductive material from FIG. 1 .
  • FIGS. 7-8 are steps in a process for forming the stacks of conductive material for both a capacitor and a 3D NAND array on a same substrate from FIG. 1 .
  • FIG. 9 is a top view of a capacitor with stacks of conductive material, with an overlay of mask regions defining varying etch depths for electrical conductors.
  • FIG. 10 is a side view of a capacitor with stacks of conductive material.
  • FIGS. 11-14 illustrate a sequence of steps creating electrical conductors at an interconnect region in contact with extensions of the terminal layers, such as shown in the example of FIG. 10 , providing electrical access to a serpentine, stacked plate capacitor assembly.
  • FIG. 15 is a simplified block diagram of an integrated circuit with stacks of conductive material for both a capacitor and a 3D NAND array on a same substrate.
  • FIG. 16 is a simplified block diagram of a computer system that implements software incorporating aspects of the present technology.
  • FIG. 16A shows a nontransitory computer readable medium storing computer readable data with aspects of the present technology.
  • Capacitance is very useful electronic circuitry, but is expensive and has manufacturing difficulties when manufactured in semiconductors. Capacitance can be used to help reduce voltage variations and can be used to help save data in memory, such as SRAM, DRAM and Flash, either during normal operations or due to unexpected power failures. While there are system-level products for providing such capacitance, there may be advantages to providing it at the semiconductor level, including system cost, power and reliability.
  • FIG. 1 is an end view of stacks of conductive material for both a capacitor and a 3D NAND array on a same substrate.
  • the strips of conductive material and strips of insulator extend into and out of the page to the extent of the lengths of the strips of conductive material and strips of insulator.
  • the same insulator layer 10 is the base for stacks of conductive material that are in both a capacitor and a 3D NAND array. Insulator layer 10 is over a substrate layer 9 . Stacks 15 a and 15 b are included in capacitor devices. Stacks 15 c and 15 d are included in a 3D NAND array.
  • the zigzag lines through the insulator layer 10 indicate that the capacitor and a 3D NAND array are spaced apart on the same insulator layer 10 .
  • the stacks are spaced apart on a same conductive substrate, and the bottom of each stack is an insulator strip.
  • strips of conductive material alternate with strips of insulator.
  • an insulator strip 12 a electrically insulates proximate strips of conductive material 11 a and 13 a in the same stack from each other.
  • Insulator strip 14 a is above top-most conductive material strip 13 a .
  • a same arrangement of insulator strips and conductive material strips is in stacks 15 b, 15 c, and 15 d.
  • Conductive material strips 13 a , 13 b , 13 c , and 13 d share a same plane position and thus have a same vertical position relative to each other.
  • Conductive material strips 11 a , 11 b , 11 c , and 11 d also share a same plane position and thus have a same vertical position relative to each other.
  • Conductive material strips 13 a , 13 b , 13 c , and 13 d have a different plane position relative to conductive material strips 11 a , 11 b , 11 c , and 11 d ; thus conductive material strips 13 a , 13 b , 13 c , and 13 d have a different vertical position relative to conductive material strips 11 a, 11 b , 11 c, and 11 d.
  • the bottom insulator strip on the common conductive substrate isolates the conductive substrate shared by multiple stacks from the bottom-most conductive strip in each stack.
  • the strips of conductive material in both the capacitor terminal stacks and the 3D NAND array can be implemented using polysilicon or epitaxial single crystal silicon having n-type or p-type doping.
  • the insulator strips can be implemented for example using silicon dioxide, other silicon oxides, or silicon nitride.
  • the 3D NAND array of the integrated circuit includes stacks 15 c and 15 d of strips of conductive material. So complexity and cost of the integrated circuit is not appreciably increased from the further inclusion of stacks 15 a and 15 b of strips of conductive material as capacitors of the integrated circuit.
  • FIG. 2 is a side view of a capacitor with a stack of conductive material from FIG. 1 .
  • the strips of conductive material and strips of insulator extend into and out of the page to the extent of the widths of the strips of conductive material and strips of insulator.
  • Insulator layer 10 is the base for the stack of conductive material that in a capacitor device. Insulator layer 10 is over a substrate layer 9 . Additional stacks of conductive material for additional capacitor device can be elsewhere on the insulator layer 10 . Also, a 3D NAND array with multiple stacks of conductive material is elsewhere on the insulator layer 10 . In another embodiment, the stack is on a conductive substrate, and the bottom of each stack is an insulator strip. The capacitor suppresses parasitic capacitance by omitting the well-to-substrate capacitance of well capacitors, which could be in the range of about tenths of picofarads.
  • the stack strips of conductive material alternate with strips of insulator.
  • the stack includes capacitor terminal strip 1 21 , capacitor terminal strip 2 23 , capacitor terminal strip 3 25 , capacitor terminal strip 4 27 , capacitor terminal strip 5 29 , capacitor terminal strip 6 31 , capacitor terminal strip 7 33 , and capacitor terminal strip 8 35 .
  • the stack also includes insulator strip 1 22 , insulator strip 2 24 , insulator strip 3 26 , insulator strip 4 28 , insulator strip 5 30 , insulator strip 6 32 , insulator strip 7 34 , and insulator strip 8 36 . Accordingly, the capacitor terminal strips alternate with insulator strips.
  • An insulator strip electrically insulates proximate strips capacitor terminal strips in the same stack from each other.
  • the strips of conductive material in both the capacitor terminal stacks and the 3D NAND array can be implemented using polysilicon or epitaxial single crystal silicon having n-type or p-type doping.
  • the insulator strips can be implemented for example using silicon dioxide, other silicon oxides, or silicon nitride.
  • Terminal connection circuit 1 37 and terminal connection circuit 2 38 electrically connect together capacitor terminal strips. Such terminal connection circuits electrically connect the multiple capacitors within the stack in parallel. As discussed below, the parallel connection sums the capacitances of the multiple capacitors within the stack, resulting in a high total capacitance of the stack.
  • Terminal connection circuit 1 37 electrically connects the “odd” capacitor terminal strips, including capacitor terminal strip 1 21 , capacitor terminal strip 3 25 , capacitor terminal strip 5 29 , and capacitor terminal strip 7 33 .
  • Terminal connection circuit 2 38 electrically connects the “even” capacitor terminal strips, including capacitor terminal strip 2 23 , capacitor terminal strip 4 27 , capacitor terminal strip 6 31 , and capacitor terminal strip 8 35 .
  • the stack includes seven capacitors each having a respective one of the insulator strips as the capacitor's intermediate dielectric.
  • the seven capacitors each have two terminals, including a first capacitor terminal which is one of the “odd” capacitor terminal strips, and a second capacitor terminal which is one of the “even” capacitor terminal strips.
  • Other embodiments have more or fewer capacitors in the stack. Other embodiments connect in parallel only a subset of the capacitors in the stack. Other embodiments connect in series two or more of the capacitors in the stack. Other embodiments connect in series two or more of the capacitors in the stack, and connect in parallel two or more of the capacitors in the stack. Other embodiments allow one or more of the intermediate terminals to float, to allow more leeway in the layout.
  • FIGS. 3 and 4 are circuit diagrams of different ways to interconnect individual capacitors in a stack of conductive material, resulting in different overall capacitances of the stack of conductive material as a whole.
  • FIG. 3 has four capacitors connected to electrical conductors 46 . 0 and 46 . 1 , 46 . 2 and 46 . 3 , 46 . 4 and 46 . 5 , and 46 . 6 and 46 . 7 .
  • the individual capacitors identified as C 01 , C 23 , C 45 and C 67 in FIG. 3 , can be placed in parallel.
  • electrical conductors 46 . 0 , 46 . 2 , 46 . 4 and 46 . 6 are shorted to one another as a first terminal 47 and electrical conductors 46 . 1 , 46 . 3 , 46 . 5 and 46 . 7 are shorted to one another as a second terminal 48 .
  • FIG. 4 shows each of capacitors C 01 , C 23 , C 45 and C 67 connected in series. While the total capacitance C T for the FIG. 4 example is less than the capacitance of any of the individual capacitors, placing the capacitors in series is useful when working with high voltages because each capacitor only sees a fraction of the total voltage.
  • Other embodiments can connect series-connected capacitors and parallel-connected capacitors.
  • FIG. 5 is a perspective illustration of a three-dimensional, vertical gate NAND-flash memory device with stacks of conductive material from FIG. 1 .
  • the device illustrated in FIG. 1 includes stacks of active lines in active layers of the array, alternating with insulating lines. Insulating material is removed from the drawing to expose additional structure. For example, insulating lines are removed between the semiconductor lines in the stacks, and between the stacks of semiconductor lines.
  • a multilayer array is formed on an insulating layer, and includes a plurality of word lines 125 - 1 , . . . , 125 -N conformal with the plurality of stacks.
  • the plurality of stacks includes semiconductor lines 112 , 113 , 114 , and 115 in multiple planes. Semiconductor lines in the same plane are electrically coupled together by bit line contact pads (e.g. 102 B).
  • the plurality of stacks are formed on a same substrate as stacks in capacitors, as shown in FIG. 1 .
  • Bit line contact pads 112 A, 113 A, 114 A, and 115 A are on the near end of the figure terminate semiconductor lines, such as semiconductor lines 112 , 113 , 114 , and 115 . As illustrated, these bit line contact pads 112 A, 113 A, 114 A, and 115 A are electrically connected by interlayer connectors to different bit lines in an overlying patterned metal layer, e.g. ML 3 , for connection to decoding circuitry to select planes within the array. These bit line contact pads 112 A, 113 A, 114 A, and 115 A can be formed over stepped substrate structures as discussed below, and patterned at the same time that the plurality of stacks is defined.
  • these bit line contact pads 102 B, 103 B, 104 B, and 105 B are electrically connected by interlayer connectors to different bit lines in an overlying patterned metal layer, e.g. ML 3 , for connection to decoding circuitry to select planes within the array.
  • These bit line contact pads 102 B, 103 B, 104 B, and 105 B can be formed over stepped substrate structures as discussed below, and patterned at the same time that the plurality of stacks is defined.
  • any given stack of semiconductor lines is coupled to either the bit line contact pads 112 A, 113 A, 114 A, and 115 A, or the bit line contact pads 102 B, 103 B, 104 B, and 105 B, but not both.
  • a stack of semiconductor bit lines has one of the two opposite orientations of bit line end-to-source line end orientation, or source line end-to-bit line end orientation.
  • the stack of semiconductor lines 112 , 113 , 114 , and 115 has bit line end-to-source line end orientation; and the stack of semiconductor lines 102 , 103 , 104 , and 105 has source line end-to-bit line end orientation.
  • the stack of semiconductor lines 112 , 113 , 114 , and 115 terminated by the bit line contact pads 112 A, 113 A, 114 A, and 115 A, passes through SSL gate structure 119 , ground select line GSL 126 , word lines 125 - 1 WL through 125 -N WL, ground select line GSL 127 , and is terminated at the other end by source line 128 .
  • the stack of semiconductor lines 112 , 113 , 114 , and 115 does not reach the bit line structures 102 B, 103 B, 104 B, and 105 B.
  • the stack of semiconductor lines 102 , 103 , 104 , and 105 terminated by the bit line contact pads 102 B, 103 B, 104 B, and 105 B, passes through SSL gate structure 109 , ground select line GSL 127 , word lines 125 -N WL through 125 - 1 WL, ground select line GSL 126 , and is terminated at the other end by a source line (obscured by other parts of the figure).
  • the stack of semiconductor lines 102 , 103 , 104 , and 105 does not reach the bit line structures 112 A, 113 A, 114 A, and 115 A.
  • a layer of memory material is disposed in interface regions at cross-points between surfaces of the semiconductor lines 112 - 115 and 102 - 105 and the plurality of word lines 125 - 1 through 125 - n.
  • Ground select lines GSL 126 and GSL 127 are conformal with the plurality of stacks, similar to the word lines.
  • Every stack of semiconductor lines is terminated at one end by bit line contact pads and at the other end by a source line.
  • the stack of semiconductor lines 112 , 113 , 114 , and 115 is terminated by bit line contact pads 112 A, 113 A, 114 A, and 115 A, and terminated on the other end by a source line 128 .
  • Bit lines and string select lines are formed at the metal layers ML 1 , ML 2 , and ML 3 .
  • Bit lines are coupled to a plane decoder (not shown) in the peripheral area on the circuit.
  • String select lines are coupled to a string select line decoder (not shown) in the peripheral area on the circuit.
  • the ground select lines GSL 126 and 127 can be patterned during the same step that the word lines 125 - 1 through 125 -n are defined. Ground select devices are formed at cross-points between surfaces of the plurality of stacks and ground select lines GSL 126 and 127 .
  • the SSL gate structures 119 and 109 can be patterned during the same step that the word lines 125 - 1 through 125 -n are defined. String select devices are formed at cross-points between surfaces of the plurality of stacks and string select (SSL) gate structures 119 and 109 . These devices are coupled to decoding circuitry for selecting the strings within particular stacks in the array.
  • FIG. 6 is a perspective illustration of an alternative three-dimensional, vertical channel NAND-flash memory device with stacks of conductive material from FIG. 1 .
  • the memory device includes an array of NAND strings of memory cells, and can be a double-gate vertical channel memory array (DGVC).
  • the memory device includes an integrated circuit substrate 201 , and a plurality of stacks of conductive strips alternating with insulating material.
  • the stacks include at least a bottom plane of conductive strips (GSL), a plurality of intermediate planes of conductive strips (WLs), and a top plane of conductive strips (SSLs).
  • the stacks are formed on a same substrate as stacks in capacitors, as shown in FIG. 1 .
  • a stack 210 includes a bottom plane of conductive strips (GSL), a plurality of intermediate planes of conductive strips (WLs) ranging from WL 0 to WL N-1 , and a top plane of conductive strips (SSLs), where N can be 8, 16, 32, 64 and so on.
  • the insulating material is removed from the drawing to expose additional structure. For example, the insulating material is removed between the conductive strips in the stacks, and is removed between the stacks of conductive strips.
  • a plurality of bit line structures is arranged orthogonally over, having surfaces conformal with, the plurality of stacks, including inter-stack semiconductor body elements 220 between the stacks and linking elements 230 over the stacks connecting the semiconductor body elements 220 .
  • the memory device includes memory elements in interface regions at cross-points 280 between side surfaces of the conductive strips in the plurality of intermediate planes (WLs) in the stacks and the inter-stack semiconductor body elements 220 of the plurality of bit line structures.
  • a reference conductor 260 is disposed between the bottom plane (GSL) of conductive strips and the integrated circuit substrate 201 .
  • At least one reference line structure is arranged orthogonally over the plurality of stacks, including inter-stack semiconductor elements 240 between the stacks in electrical communication with the reference conductor 260 , and linking elements 250 over the stacks 210 connecting the inter-stack semiconductor elements 240 .
  • the semiconductor elements 240 can have a higher conductivity than the semiconductor body elements 220 .
  • the memory device includes string select switches 290 at interface regions with the top plane of conductive strips, and reference select switches 270 at interface regions with the bottom plane (GSL) of conductive strips.
  • the memory device can further include decoding circuitry coupled to the conductive strips in the plurality of stacks.
  • the decoding circuitry can include word line decoding circuits, and string selection line decoding circuits coupled to the top plane of conductive strips (SSLs) in the plurality of stacks. String selection lines in the top plane of conductive strips are independently coupled to and controlled by the string selection line decoding circuits.
  • Conductive strips in the intermediate planes (WLs), and conductive strips in the bottom plane (GSL) are connected together to reduce decoder areas and consequently an overall size of the memory device. Conductive strips in the top plane (SSL) are individually decoded to allow correct bit line decoding.
  • the memory device can include contact pads which provide linking elements, such as contact pads 261 and 262 , connecting sets of word lines in the intermediate planes (WL), and interlayer connectors, such as interlayer connectors 271 and 272 , coupled to landing areas in the contact pads 261 and 262 , and to the word line decoding circuits (not shown).
  • the landing areas are at interface regions between bottom surfaces of the interlayer connectors and top surfaces of the contact pads.
  • interlayer connectors e.g. 271 and 272 for sets of word lines at multiple layers in the plurality of intermediate planes are arranged in a staircase structure, and are connected to landing areas at two different layers in the plurality of intermediate planes.
  • the contact pads can be formed over a stepped substrate structure as described below.
  • the staircase structure can be formed in a vertical contact region near the boundary of a memory cell region for the array of memory cells and a peripheral region for components of peripheral circuits.
  • the vertical contact region can include contact pads 261 and 262 , and interlayer connectors 271 and 272 .
  • the memory device can include ground selection line decoding circuits coupled to the at least one bottom plane (GSL) of conductive strips in the plurality of stacks.
  • the memory device can include contact pads, such as a contact pad 263 , connecting sets of ground selection lines in the bottom plane (GSL) of conductive strips, and interlayer connectors, such as an interlayer connector 273 , coupled to landing areas in the contact pads, and to the ground selection line decoding circuits (not shown).
  • the memory device includes a first overlying conductive layer (not shown) connected to the plurality of bit line structures, including a plurality of global bit lines coupled to sensing circuits.
  • the memory device also includes a second overlying conductive layer (not shown) connected to the at least one reference conductor structure, coupled to a reference voltage source.
  • Insulating layers in the stack can be the same as or different from the other layers.
  • Representative insulating materials that can be used include a silicon oxide, a silicon nitride, a silicon oxynitride, silicate, or other materials.
  • Low dielectric constant (low-k) materials having a dielectric constant smaller than that of silicon dioxide, such as SiCHO x can be used.
  • High dielectric constant (high-k) materials having a dielectric constant greater than that of silicon dioxide, such as HfO x , HfON, AlO x , RuO x , TiO x , can be used also.
  • Conductor or semiconductor layers in the stack can be the same as or different from the other layers.
  • Representative materials that can be used include semiconductors including undoped and doped polysilicon (using dopants such as As, P, B), combinations of semiconductor structures, silicides including TiSi, CoSi, oxide semiconductors, including InZnO, InGaZnO, and combinations of semiconductors and silicides.
  • Conductive layers in the stack can also be a metal, a conductive compound, or combinations of materials including Al, Cu, W, Ti, Co, Ni, TiN, TaN, TaA 1 N, and others.
  • FIGS. 7-8 are steps in a process for forming the stacks of conductive material for both a capacitor and a 3D NAND array on a same substrate from FIG. 1 .
  • FIG. 7 a structure is shown which results from alternating deposition of insulating layers 210 , 212 , 214 and semiconductor layers 211 , 213 formed using doped semiconductors for example in a blanket deposition in the array area of a chip.
  • the semiconductor layers 211 , 213 can be implemented using polysilicon or epitaxial single crystal silicon having n-type or p-type doping.
  • a typical thickness range of the semiconductor layers is from 200 to 500 angstroms.
  • Inter-level insulating layers 210 , 212 , 214 can be implemented for example using silicon dioxide, other silicon oxides, or silicon nitride. These layers can be formed in a variety of ways, including low pressure chemical vapor deposition LPCVD processes available in the art.
  • the zigzag lines through the insulator layer 210 indicate that the capacitor and a 3D NAND array are spaced apart on the same insulator layer 210 .
  • the stacks are spaced apart on a same conductive substrate, and the bottom of each stack is an insulator strip.
  • FIG. 8 shows the result of a first lithographic patterning step used to define a plurality of ridge-shaped stacks 250 of semiconductor strips, where the semiconductor strips are implemented using the material of the semiconductor layers 211 , 213 , and separated by the insulating layers 212 , 214 .
  • Deep, high aspect ratio trenches can be formed in the stack, supporting many layers, using lithography based processes applying a carbon hard mask and reactive ion etching.
  • the same insulator layer 210 is the base for stacks of conductive material that are in both a capacitor and a 3D NAND array.
  • Stack 215 a is included in a capacitor device.
  • Stack 15 b is included in a 3D NAND array.
  • Conductive material strips 213 a and 213 b share a same plane position and thus have a same vertical position relative to each other. Conductive material strips 211 a and 211 b also share a same plane position and thus have a same vertical position relative to each other. Conductive material strips 213 a and 213 b have a different plane position relative to conductive material strips 211 a and 211 b ; thus conductive material strips 213 a and 213 b have a different vertical position relative to conductive material strips 211 a and 211 b.
  • the zigzag lines through the insulator layer 210 indicate that the capacitor and a 3D NAND array are spaced apart on the same insulator layer 210 .
  • the stacks are spaced apart on a same conductive substrate, and the bottom of each stack is an insulator strip.
  • the capacitor structures can be made on what could be called a rough surface conductor so that the upper portion of substrate 12 and ridges 16 would be made of electrical conductors and thus act as an electrically conductive terminal layer.
  • the conductors can be a metal or combination of metals, include Al, Cu, W, Ti, Co, Ni.
  • the conductors can also be metal compounds, such as TiN/TaN/AlCu, or semiconductor compounds, such as heavily doped Si (using dopants such as As, P, B.); silicides including TiSi, CoSi.
  • typical dielectric materials include SiO 2 , SiN, SiON.
  • high dielectric constant (high-k) materials having a dielectric constant greater than that of silicon dioxide, such as HfO x , HfON, AlO x , RuO x , TiO x , are generally preferred.
  • the dielectric materials may also be a multi-layer, such as silicon oxide/silicon nitride, silicon oxide (ONO), silicon oxide, high-k dielectric, silicon oxide (O/high-k/O), which provide higher k values and create less concern about capacitance leakage.
  • a suitable deposition technique for dielectric layer 22 would be, for example, atomic layer deposition ALD, high density plasma chemical vapor deposition HDCVD, low density plasma chemical vapor deposition LPCVD, etc., depending on the chosen materials.
  • the process of depositing the terminal layers 20 and dielectric layers 22 proceeds until a desired number of serpentine plate capacitors 18 are created.
  • the size of trench width 26 and the ratio between trench width 26 and ridge height 32 typically limits the number of terminal and dielectric layers 20 , 22 .
  • the size of trench width 26 is usually greater than ridge width 30 .
  • FIG. 9 is a top view of a capacitor with stacks of conductive material, with an overlay of mask regions defining varying etch depths for electrical conductors.
  • the stacks of conductive strips extend into and out of the page to the extent of the heights of the stacks.
  • Other embodiments have fewer or more stacks of conductive material.
  • the stacks have lengths with a first end and a second end. The first ends are interconnected electrically by terminal connection circuit 1 37 and the second ends are interconnected electrically by terminal connection circuit 2 38 .
  • Terminal connection circuit 1 37 interconnects “odd” numbered layers of capacitor terminal strips.
  • Terminal connection circuit 2 38 interconnects “even” numbered layers of capacitor terminal strips. Such interconnection can be seen in FIG. 2 .
  • the dimensions of the capacitor terminal strips can be sufficiently large such that even the minimal resistance of the conductive strips results in unacceptably long RC delay.
  • An example RC delay calculation of the capacitor in FIG. 2 follows:
  • the capacitor terminal strips at different layers can be coupled to terminal connection circuit 1 37 or terminal connection circuit 2 38 not just at ends of the stacks, but also at an intermediate position between the first ends and the second ends.
  • Such more frequent terminal connections are called strap connections. Strap connections reduce the resistance L in the example RC delay calculation.
  • the strap connections are defined by the overlay of mask regions defining varying etch depths for the strap connections.
  • Mask region 306 defines an etch depth of 4 layers.
  • Mask regions 302 define an etch depth of 2 layers.
  • Mask regions 304 define an etch depth of 1 layer.
  • the etch depths vary from 0 layers to 7 layers, depending on the combination of mask regions 302 , 304 , and 306 which overlie each other above particular stacks of conductive material.
  • the conductive material stacks have the following combined etch depths for the strap connections.
  • 15 e has a 7 layer etch depth
  • 15 f has a 6 layer etch depth
  • 15 g has a 5 layer etch depth
  • 15 h has a 4 layer etch depth
  • 15 i has a 3 layer etch depth
  • 15 j has a 2 layer etch depth
  • 15 k has a 1 layer etch depth
  • 15 l has a 0 layer etch depth.
  • FIG. 10 is a side view of a capacitor with stacks of conductive material.
  • the different layers of conductive material are contacted by conductive plugs of different depths.
  • Such an array of conductive plugs can be used as the strap contacts or as the terminal connection circuits in FIG. 9 .
  • the staircase plugs can have the same pitch as the stacks of conductive material.
  • FIGS. 11-14 illustrate a sequence of steps creating electrical conductors at an interconnect region in contact with extensions of the terminal layers, such as shown in the example of FIG. 10 .
  • terminal layer extensions 40 are identified in the figures as terminal layer extensions 40 . 0 through 40 . 7 with the top most being 40 . 0 .
  • the locations for the electrical conductors 46 for contact with the corresponding terminal layer extensions 40 are labeled 0 through 7 in the figures. Similar numbering occurs with dielectric layer extensions 42 .
  • an interconnect region 44 is located at the top of one or more dielectric ridges 16 or at the bottom of one or more trenches 15 , then terminal conductors 46 will directly contact the terminal layers 20 with terminal layer extensions 40 being unnecessary.
  • a first photoresist mask 50 shown in FIG. 11 , is created on dielectric layer extension 42 . 0 at electrical conductor locations 0 , 2 , 4 , 6 and on the far side of location 7 .
  • the regions covered by photoresist masks are sometimes referred to as mask regions.
  • the regions not covered by first photoresist mask 50 are then etched one level through dielectric layer extension 42 . 0 and terminal layer extension 40 . 0 to create the structure shown in FIG. 11 .
  • first photoresist mask 50 is removed and then a second photoresist mask 54 is formed on the resulting structure of FIG.
  • third photoresist mask 58 is removed and an optional conformal dielectric barrier layer material can be deposited on the exposed surfaces, including over the stair stepped landing pads 60 , to create a dielectric barrier layer 62 .
  • Barrier layer 62 is used as an etching stop and is can be made of silicon nitride.
  • Dielectric fill layer 24 is deposited on the resulting structure. Appropriate vias are then formed through dielectric fill layer 24 and through the dielectric barrier layer 62 covering the landing pad 60 of each of terminal layer extensions 40 . 0 - 40 . 7 .
  • Electrical conductors 46 are then formed in the vias to provide electrical connection with landing pads 60 of terminal layer extensions 40 and thus with terminal layers 20 capacitors to create the structure shown in FIG. 14 .
  • Electrical conductors 46 can be made of the same electrical conductor materials discussed above. However, doped Si, W and Cu may be preferred because of the existing knowledge about chemical mechanical polishing of these electrically conductive materials. Electrical conductors 46 are identified as 46 . 0 - 46 . 7 corresponding to locations 0 - 7 .
  • More than one interconnect region 44 could be used to access the landing pads 60 at the various levels. Some or all of the landing pads 60 at the different levels could be accessed by the same or different interconnect region 44 .
  • the process for creating electrical conductors 46 can be referred to as a binary process, based on 2 0 .. . 2 n-1 withn being the number of etching steps. That is, first photoresist mask 50 alternatingly covers 2 0 landing pads 60 and exposes 2 0 landing pads 60 ; second photoresist mask 54 alternatingly covers 2 1 landing pads 60 and exposes 2 1 landing pads 60 ; third photoresist mask 58 alternatingly covers 2 2 landing pads 60 and exposes 2 2 landing pads 60 ; and so on.
  • n masks can be used to provide access to 2 n landing pads 60 for 2 n terminalconductors 46 .
  • using three masks provides access to 8 landing pads 60 for 8 terminal conductors 46 .
  • FIG. 15 is a simplified block diagram of an integrated circuit with stacks of conductive material for both a capacitor and a 3D NAND array on a same substrate.
  • the integrated circuit line 975 includes a 3D NAND flash memory array 960 , implemented as described herein, on a semiconductor substrate with stacks of conductive material and with capacitors with stacks of conductive material.
  • a row decoder 961 is coupled to a plurality of word lines 962 , and arranged along rows in the memory array 960 .
  • a column decoder 963 is coupled to a plurality of SSL lines 964 arranged along columns corresponding to stacks in the memory array 960 for reading and programming data from the memory cells in the array 960 .
  • a plane decoder 958 is coupled to a plurality of planes in the memory array 960 via bit lines 959 .
  • Addresses are supplied on bus 965 to column decoder 963 , row decoder 961 and plane decoder 958 .
  • Sense amplifiers and data-in structures in block 966 are coupled to the column decoder 963 in this example via data bus 967 .
  • Data is supplied via the data-in line 971 from input/output ports on the integrated circuit 975 or from other data sources internal or external to the integrated circuit 975 , to the data-in structures in block 966 .
  • other circuitry 974 is included on the integrated circuit, such as a general purpose processor or special purpose application circuitry, or a combination of modules providing system-on-a-chip functionality supported by the NAND flash memory cell array.
  • Data is supplied via the data-out line 972 from the sense amplifiers in block 966 to input/output ports on the integrated circuit 975 , or to other data destinations internal or external to the integrated circuit 975 .
  • a controller implemented in this example using bias arrangement state machine 969 controls the application of bias arrangement supply voltage generated or provided through the voltage supply or supplies in block 968 , such as read, erase, program, erase verify and program verify voltages.
  • the controller can be implemented using special-purpose logic circuitry as known in the art.
  • the controller comprises a general-purpose processor, which may be implemented on the same integrated circuit, which executes a computer program to control the operations of the device.
  • a combination of special-purpose logic circuitry and a general-purpose processor may be utilized for implementation of the controller.
  • the substrate also includes capacitors with stacks of conductive material 999 on the same substrate as the 3D NAND flash memory array 960 .
  • FIG. 16 is a simplified block diagram of a computer system 110 that implements software incorporating aspects of the present invention. While the present paper indicates individual steps carrying out specified operations, it will be appreciated that each step is actually implemented with software instructions that cause the computer system 110 to operate in the specified manner.
  • Computer system 210 typically includes a processor subsystem 214 which communicates with a number of peripheral devices via bus subsystem 212 .
  • peripheral devices may include a storage subsystem 224 , comprising a memory subsystem 226 and a file storage subsystem 228 , user interface input devices 222 , user interface output devices 220 , and a network interface subsystem 216 .
  • the input and output devices allow user interaction with computer system 210 .
  • Network interface subsystem 216 provides an interface to outside networks, including an interface to communication network 218 , and is coupled via communication network 218 to corresponding interface devices in other computer systems.
  • Communication network 218 may comprise many interconnected computer systems and communication links. These communication links may be wireline links, optical links, wireless links, or any other mechanisms for communication of information. While in one embodiment, communication network 218 is the Internet, in other embodiments, communication network 218 may be any suitable computer network.
  • NICs network interface cards
  • ICs integrated circuits
  • ICs integrated circuits
  • macrocells fabricated on a single integrated circuit chip with other components of the computer system.
  • User interface input devices 222 may include a keyboard, pointing devices such as a mouse, trackball, touchpad, or graphics tablet, a scanner, a touch screen incorporated into the display, audio input devices such as voice recognition systems, microphones, and other types of input devices.
  • pointing devices such as a mouse, trackball, touchpad, or graphics tablet
  • audio input devices such as voice recognition systems, microphones, and other types of input devices.
  • use of the term “input device” is intended to include all possible types of devices and ways to input information into computer system 210 or onto computer network 218 .
  • User interface output devices 220 may include a display subsystem, a printer, a fax machine, or nonvisual displays such as audio output devices.
  • the display subsystem may include a cathode ray tube (CRT), a flat panel device such as a liquid crystal display (LCD), a projection device, or some other mechanism for creating a visible image.
  • the display subsystem may also provide non visual display such as via audio output devices.
  • output device is intended to include all possible types of devices and ways to output information from computer system 110 to the user or to another machine or computer system.
  • Non-transitory storage subsystem 224 stores the basic programming and data constructs that provide the functionality of certain embodiments of the present technology.
  • the various modules implementing the functionality of certain embodiments of the invention may be stored in storage subsystem 224 .
  • Some examples are EDA programs for a cell or layout including stacks of conductive material for NAND memory arrays and capacitors on the same substrate as described herein. These software modules are generally executed by processor subsystem 214 .
  • Storage subsystem 224 also represents storage accessible to the computer system on which the various software mentioned herein are stored. In another embodiment some or all of the software is located on storage accessible to the computer system via the network 218 .
  • Memory subsystem 226 typically includes a number of memories including a main random access memory (RAM) 230 for storage of instructions and data during program execution and a read only memory (ROM) 232 in which fixed instructions are stored.
  • File storage subsystem 228 provides persistent storage for program and data files, and may include a hard disk drive, a floppy disk drive along with associated removable media, a CD ROM drive, an optical drive, or removable media cartridges.
  • the databases and modules implementing the functionality of certain embodiments of the invention may have been provided on a computer readable medium such as one or more CD-ROMs, and may be stored by file storage subsystem 228 .
  • the host memory 226 contains, among other things, computer instructions which, when executed by the processor subsystem 214 , cause the computer system to operate or perform functions as described herein. As used herein, processes and software that are said to run in or on “the host” or “the computer”, execute on the processor subsystem 214 in response to computer instructions and data in the host memory subsystem 226 including any other local or remote storage for such instructions and data.
  • Bus subsystem 212 provides a mechanism for letting the various components and subsystems of computer system 210 communicate with each other as intended. Although bus subsystem 212 is shown schematically as a single bus, alternative embodiments of the bus subsystem may use multiple busses.
  • Computer system 210 itself can be of varying types including a personal computer, a portable computer, a workstation, a computer terminal, a network computer, a television, a mainframe, a server farm, or any other data processing system or user device. Due to the ever changing nature of computers and networks, the description of computer system 210 is intended only as a specific example for purposes of illustrating certain embodiments of the present invention. Many other configurations of computer system 210 are possible having more or less components than the computer system depicted.
  • FIG. 16A shows a nontransitory computer readable medium 240 which stores a cell or layout 280 with stacks of conductive material in a NAND array and in a capacitor on a same substrate.
  • the nontransitory computer readable medium can be any of the nontransitory memories discussed in connection with the storage subsystem 224 .

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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US15/279,203 US10388720B2 (en) 2011-03-16 2016-09-28 Capacitor with 3D NAND memory
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