TWI704251B - 字元線應用所使用的鎢 - Google Patents

字元線應用所使用的鎢 Download PDF

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TWI704251B
TWI704251B TW105104238A TW105104238A TWI704251B TW I704251 B TWI704251 B TW I704251B TW 105104238 A TW105104238 A TW 105104238A TW 105104238 A TW105104238 A TW 105104238A TW I704251 B TWI704251 B TW I704251B
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tungsten
substrate
depositing
component
patent application
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TW201700773A (zh
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米歇爾 丹納克
漢娜 班諾爾克
拉許納 胡瑪雲
高舉文
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美商蘭姆研究公司
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Abstract

本文所揭露的是在記憶體元件中形成鎢字元線之方法及相關設備。本文亦揭露的是用於沉積無氟鎢（FFW）之方法及相關設備。根據各種實施例，該等方法涉及使用鎢氯化物（WClx ）前驅物及含硼（B）、含矽（Si）或含鍺（Ge）還原劑之多成分鎢膜之沉積。

Description

字元線應用所使用的鎢
本發明係關於字元線應用所使用的鎢。
使用化學氣相沉積(CVD)技術的鎢(W)膜沉積是半導體製造處理的必要部分。例如，鎢膜可能以水平內連線、在相鄰金屬層之間的介層窗(via)、以及在第一金屬層和矽基板上的元件之間的接觸窗(contact)的形式被使用做為低電阻的電連接。在示例的鎢沉積處理中，阻障層被沉積在介電基板上，接著沉積鎢膜的薄成核層。此後，鎢膜的其餘部分被沉積在成核層上作為主體層。通常，鎢主體層係藉由在化學氣相沉積處理中利用氫氣(H2)將六氟化鎢(WF6)還原而形成。
鎢膜亦可使用在各種記憶體應用，包括動態隨機存取記憶體(DRAM)之埋藏字元線(bWL)結構之形成。在bWL沉積之範例中，可藉由使用WF6之CVD處理而將鎢層沉積在鈦氮化物(TiN)層上以形成TiN/W雙層。
本文所揭露的是在基板上沉積鎢的方法。在某些實施例中，該方法包括：脈衝式輸送(pulsing)還原劑，其中該還原劑係含硼(B)、含矽(Si)或含鍺(Ge)；及脈衝式輸送鎢氯化物前驅物，其中該鎢氯化物前驅物係藉由 該還原劑或其產物加以還原，以在基板上形成多成分含鎢膜，該多成分含鎢膜包括B、Si及Ge其中一或多者。
在某些實施例中，該方法涉及脈衝式輸送第三反應物以形成三元含鎢膜。第三反應物可為含氮或含碳反應物，俾使三元含鎢膜包括鎢、矽、鍺及硼其中一者、及碳及氮其中一者。包括矽、鍺、硼、碳及氮其中二或更多者之四元及更多元膜可以被形成。在某些實施例中，該多成分膜是二元膜。
在某些實施例中，多成分含鎢膜是用於字元線之擴散阻障物。在某些實施例中，多成分含鎢膜是用於金屬閘極之功函數層。
在某些實施例中，在鎢氯化物脈衝期間之基板溫度是至少400℃。在某些實施例中，在鎢氯化物脈衝期間之基板溫度是至少450℃。在某些實施例中，在鎢氯化物脈衝期間之基板溫度是至少500℃。在某些實施例中，在鎢氯化物脈衝期間之基板溫度是至少550℃。
在某些實施例中，在鎢氯化物及還原劑脈衝期間之基板溫度是至少400℃。在某些實施例中，在鎢氯化物及還原劑脈衝期間之基板溫度是至少450°C。在某些實施例中，在鎢氯化物及還原劑脈衝期間之基板溫度是至少500℃。在某些實施例中，在鎢氯化物及還原劑脈衝期間之基板溫度是至少550℃。
該方法可更包括沉積主體鎢(W)層在多成分含鎢膜上。在某些實施例中，藉由在鎢氯化物前驅物與還原劑之間之化學氣相沉積(CVD)反應以沉積主體W層。
在某些實施例中，主體層可直接沉積在多成分含鎢膜上，無需中介層。
根據各種實施例，多成分含鎢膜係直接沉積在絕緣膜上，例如在氧化物或氮化物膜上。在某些實施例中，該方法涉及還原劑之分解以形成一層B、Si或Ge在基板上。
亦提出記憶體結構。在某些實施例中，記憶體結構可包括包含B、Si及Ge其中一或多者之多成分含鎢膜之襯墊層；及鎢字元線。在某些實施例中，記憶體結構可包括包含B、Si及Ge其中一或多者之多成分含鎢膜之功函數層；及金屬閘極。
以下將參考著圖式進一步描述這些及其它態樣。
9:矽基板
11:埋藏字元線(bWL)
12:保形阻障層
13:絕緣層
21:字元線
22:保形阻障層
23:3D NAND結構
24:柱狀收縮部
30:基板
31:金屬閘極
32:VNAND結構
33:半導體通道
35:穿隧介電層
37:電荷儲存層
39:功函數層
41:阻擋介電質
302:方塊
304:方塊
306:方塊
307:方塊
308:方塊
309:方塊
312:方塊
352:方塊
354:方塊
400:系統
401:晶圓來源模組
403:傳送模組
407:模組
409:多站反應器
411:站
413:站
415:站
417:站
419:常壓傳送腔室
421:負載鎖室
429:系統控制器
圖1描繪動態隨機存取記憶體(DRAM)架構之概要範例，該動態隨機存取記憶體架構包括埋藏字元線(bWL)在矽基板中。
圖2A描繪三維(3D)NAND結構之概要範例，該3D NAND結構包括鎢字元線。
圖2B為部分製造的3D NAND結構之三維特徵部之二維(2D)寫實圖，該3D NAND結構包括鎢字元線。
圖2C顯示垂直NAND結構之概要範例，該垂直NAND結構包括含鎢功函數層。
圖3A顯示可用於形成含鎢二元或三元膜之方法之範例。
圖3B顯示可用於填充特徵部之方法之範例。
圖4為根據本發明之實施例之適用於實施鎢沉積處理之處理系統之方塊圖。
在以下敘述中，數個特定細節被提出以提供對於所述實施例之徹底了解。所揭露的實施例可在沒有這些特定細節之部分或全部之情況下加以實施。在其它的情況下，熟知的處理操作並未詳細地描述以免不必要地混淆所揭 露的實施例。雖然所揭露的實施例將結合特定實施例而加以敘述，但應當了解，其並非用來限制所揭露的實施例。
半導體元件製造通常涉及鎢膜之沉積，例如在溝渠或介層窗中以形成內連線。在習知的鎢膜沉積方法中，先將成核鎢層沉積在介層窗或接觸窗中。通常，成核層是薄保形層，用於幫助隨後的主體材料形成於其上。可將鎢成核層沉積以保形地覆蓋特徵部之側壁及底部。下方特徵部底部及側壁之保形對於維持高品質的沉積可能是關鍵的。成核層之沉積通常使用原子層沉積(ALD)或脈衝式成核層(PNL)方法。
在PNL技術中，反應物之脈衝係相繼地注入及從反應腔室清除，通常藉由在反應物之間之吹淨氣體(purge gas)之脈衝。第一反應物可吸附在基板上，可用於與下一反應物進行反應。以循環的方式重複該處理，直到達成想要的厚度。PNL類似於ALD技術。PNL與ALD之大致區別在於其較高的操作壓力範圍(大於1Torr)及其每循環較高的成長速率(每循環大於1單層膜成長)。在PNL沉積期間之腔室壓力可介於約1Torr至約400Torr之範圍。在本文所提出之敘述內容中，PNL概括地包含相繼地加入反應物以在半導體基板上進行反應之任何循環處理。因此，該概念包含習知稱為ALD之技術。在所揭露的實施例之內容中，CVD包含其中將反應物一起引入反應器以進行氣相反應之處理。PNL及ALD處理與CVD處理是有區別的，反之亦然。
在沉積鎢成核層之後，一般藉由使用例如氫(H2)之還原劑以還原六氟化鎢(WF6)之化學氣相沉積(CVD)處理以沉積主體鎢。
習知的鎢沉積涉及含氟前驅物WF6之使用。然而，WF6之使用會導致一些氟併入所沉積的鎢膜中。當元件縮小時，特徵部變得更小且有害的影響電遷移和離子擴散變得更顯著，因而造成元件失效。氟之存在可能造成電遷移 及/或氟擴散至相鄰部分中，因而減低元件之效能。包括微量氟之鎢膜可能因此造成整合及可靠度問題、以及與下方膜有關之元件效能問題。
本文所揭露的是用於在記憶體元件中形成鎢字元線之方法及相關設備。本文亦揭露的是用以沉積無氟鎢(fluorine-free tungsten，FFW)之方法及相關設備。圖1描繪DRAM架構之概要範例，該DRAM架構包括埋藏字元線(bWL)11在矽基板9中。bWL係形成在蝕刻在矽基板9中之溝渠中。做為溝渠之襯墊的是保形阻障層12及絕緣層13，絕緣層13係配置在保形阻障層12與矽基板9之間。在圖1之範例中，絕緣層13可為閘極氧化物層，由高介電常數介電材料(例如矽氧化物或矽氮化物材料)所形成。
在本文所揭露的某些實施例中，保形阻障層12是含鎢層。在習知的鎢(W)字元線架構中，使用鈦氮化物(TiN)做為阻障物。然而，TiN/W字元線填充受到電阻率大小之限制；因為TiN具有相當高的電阻率，當尺寸減少且TiN保形層佔據溝渠之較大體積分率時，則電阻增加。根據各種實施例，本文所揭露的鎢bWL是無TiN及其它非W阻障層。
保形阻障層12可包括硼、矽及鍺其中一或多者。在某些實施例中，保形阻障層12是二元化合物，例如WBx、WSix及WGex，其中x是大於零之數字。在某些實施例中，保形阻障層12可包括碳或氮。在某些實施例中，保形阻障層12可包括硼、矽及鍺其中一或多者、及碳及氮其中一或兩者。在某些實施例中，保形阻障層12是三元化合物，例如WBxNy、WSixNy、WGexNy、WSixCy、WBxCy、WGexCy、等，其中x及y是大於零之數字。包括Si、B、Ge、N及C之四元及更多元化合物亦可被使用，範例包括WBxGeyNz、WGexCyNz、等，其中x、y及z是大於零之數字。
圖2A描繪在3D NAND結構23中之字元線21之概要範例。在圖2B中，顯示在鎢填充後之部分製造的3D NAND結構之3D特徵部之2D寫實圖，包 括字元線21及保形阻障層22。圖2B為已填充區域之剖面繪圖，具有如圖中所示之柱狀收縮部24，代表在俯視圖中可見、而非橫剖面圖中可見之收縮部。保形阻障層22可為如上所述之含鎢層(如圖1中之保形阻障層12)。含鎢膜可做為阻障層及成核層以用於隨後的CVD W沉積。
在某些實施例中，提出用於金屬閘極之含鎢功函數層，包括用於3D記憶體結構(例如上述之3D NAND結構)之金屬閘極之功函數層。
圖2C顯示VNAND結構32之概要範例，該VNAND結構32包括形成在基板30上之金屬閘極31，亦顯示金屬閘極31及相關膜堆疊之範例之放大圖。VNAND結構32包括半導體通道33、穿隧介電層35、電荷儲存層37、功函數層39、阻擋介電質41、及金屬閘極31。
在記憶體結構(包括圖2A-2C之範例中所示之結構)中之功函數層之範例包括二元含鎢化合物之膜，例如WBx、WSix及WGex，其中x是大於零之數字。在某些實施例中，功函數層可包括碳或氮。在某些實施例中，功函數層可包括硼、矽及鍺其中一或多者、及碳及氮其中一或兩者。在某些實施例中，功函數層是三元化合物，例如WBxNy、WSixNy、WGexNy、WSixCy、WBxCy、WGexCy、等。包括Si、B、Ge、N及C之四元及更多元化合物亦可被使用。含鎢膜可做為功函數層及成核層以用於隨後的CVD W沉積。功函數層可沉積在介電材料(例如閘極氧化物)上。
在某些實施例中，參考圖2A-2C而加以說明之記憶體結構不包括TiN擴散阻障物或TiN功函數層。
圖3A顯示可用於形成含鎢二元或三元膜之方法之範例。首先，使基板暴露至還原劑脈衝(302)。在某些實施例中，該基板可為部分製造的記憶體元件。在某些實施例中，暴露於還原劑脈衝而形成膜於其上之表面是介電 質。根據各種實施例，該膜可形成在其它類型的表面(包括導電及半導電表面)上。
使用在方塊302中之還原劑將還原在後續操作中使用之含鎢前驅物並且提供待併入所產生膜之中之化合物。這類還原劑之範例包括含硼、含矽及含鍺還原劑。含硼還原劑之範例包括硼烷，例如BnHn+4、BnHn+6、BnHn+8、BnHm，其中n是1至10之整數，m是與n不同之整數。在特定的實施例中，可使用二硼烷。亦可使用其它含硼化合物，例如，烷基硼烷、烷基硼、胺基硼烷(CH3)2NB(CH2)2、及碳硼烷，例如C2BnHn+2。含矽化合物之範例包括矽烷，例如SiH4及Si2H6。含鍺化合物之範例包括鍺烷，例如GenHn+4、GenHn+6、GenHn+8及GenHm，其中n是1至10之整數，且n是與m不同之整數。亦可使用其它含鍺化合物，例如，烷基鍺烷、烷基鍺、胺基鍺烷及碳鍺烷。
根據各種實施例，方塊302可能涉及一薄層的熱分解元素硼、矽或鍺之吸附至基板表面上。在某些實施例中，方塊302可能涉及前驅物分子之吸附至基板表面上。
其次，基板所在之腔室可選擇性地被吹淨(304)。可利用吹淨脈衝或抽真空以移除任何副產物(若存在的話)及未吸附的前驅物。接著是鎢氯化物前驅物之脈衝(306)。鎢氯化物前驅物包括WCl2、WCl4、WCl5及WCl6、及其混合物。在某些實施例中，鎢氯化物前驅物是六氯化鎢(WCl6)，五氯化鎢(WCl5)或其混合物。在方塊306之後，亦可實施選擇性的吹淨(307)。鎢前驅物被還原劑(或其分解或反應產物)所還原以形成多成分膜。
沉積循環通常會沉積一部分的含鎢層。在某些實行例中，在方塊307之後，沉積循環可能完成，所沉積的膜是含鎢二元膜，例如WBx、WSix及WGex，其中x是大於零。在這樣的實施例中，處理可進行至方塊312以重複方塊302-307之循環直到沉積至想要的厚度。示例的成長速率可為約每循環100Å。
在某些實施例中，處理將進行選擇性地引入第三反應物(308)。第三反應物通常包括待引入膜中之元素，例如碳或氮。含氮反應物之範例包括N2、NH3及N2H4。含碳反應物之範例包括CH4及C2H2。隨後可進行選擇性的吹淨(309)。接著，處理可進行至方塊312以重複沉積循環。
包括氮或碳之三元膜之範例提供如上。在某些實施例中，膜可包括氮及碳兩者(例如WSiCN)。
根據各種實施例，多成分鎢膜可具有下列的原子百分比：W約5%至90%，B/Ge/Si約5%至60%，C/N約5%至80%。在某些實施例中，多成分膜具有下列的原子百分比：W約15%至約80%，B/Ge/Si約15%至約50%，C/N約20%至約50%。根據各種實施例，多成分鎢膜為至少50%鎢。
根據各種實施例，沉積溫度是相當高，例如在400℃及650℃之間，包括在450℃及600℃之間，在某些實施例中大於約500℃。此有助於鎢氯化物之還原並且亦使B、Si或Ge能夠併入二元膜中。該範圍之下端通常受限於鎢氯化物化合物能夠以合理的反應速率被還原之溫度，該溫度通常高於鎢氟化物還原。該範圍之上端可能受限於熱預算考量。在某些實施例中，方塊302、306及308其中任何一或多者可在不同於其它方塊其中任一者之溫度加以實施。美國專利申請案第14/703,732號(其合併於此做為參考)描述一處理範例，其中實施還原劑脈衝之溫度係低於隨後的鎢氯化物脈衝。類似的溫度控制可使用在圖3A之實施例中。在某些實施例中，從方塊302轉變至方塊306以及從方塊306轉變至方塊308涉及在多站腔室中將基板從一沉積站移動至另一者。此外，方塊302、方塊306、方塊308每一者可在相同多站腔室之不同站中加以實施。
在某些實施例中，可藉由引入氮或碳而調整二元或三元膜之電性，例如功函數。類似地，可調整還原劑之量(藉由調整用量及/或脈衝時間)以調整併入膜中之B、Si或Ge之量。此外，方塊302、306及308其中任何一或兩者 在每循環可實施超過一次，以調整二元或三元膜之鎢與其它成分之相對量及其物理、電及化學特性。美國專利公開案第20140027664號(其合併於此做為參考)描述用於形成三元WBN膜之不同循環之範例。在某些實施例中，所沉積的含鎢膜具有約4.5-4.8eV之有效功函數。
圖3B顯示可用於填充特徵部之方法之範例。首先，沉積含鎢多成分層(352)。多成分層可包括W、B、Si及Ge其中一或多者、及選擇性的C及N其中一或多者。範例包括WBx、WSix、WGex、WBxNy、WSixNy、WGexNy、WSixCy、WBxCy、WGexCy，其中x及y是大於零。可以關於圖3A之以上敘述以沉積該膜。
其次，含鎢多成分層可暴露至鎢氯化物前驅物以藉由CVD而沉積W金屬。對照於方塊352，CVD沉積的W通常是純鎢，亦即只有微量的雜質。在某些實施例中，該膜為至少95% W。在方塊352中沉積的層可做為在方塊354中之CVD W沉積用之成核層。方塊354可填充在基板上之特徵部，包括垂直特徵部(例如鎢介層窗及bWL)及水平特徵部(例如VNAND字元線)。如上所述，關於圖3A及3B所實施之方法通常不包括含氟前驅物。
在CVD反應中示例的基板溫度為如450℃一般低且可為如650℃一般高。在某些實施例中，鎢氯化物前驅物是WCl5或WCl6。在某些實施例中，還原劑是氫氣，但可使用其它還原劑，包括矽烷、硼烷及鍺烷。在某些實施例中，可以不同的階段實施CVD，例如低溫階段及高溫階段。在某些實施例中，CVD操作可發生在多個階段中，其中反應物之連續及同時流動之多個時期被一或更多反應物流動被轉向之時期所分隔開。
在方塊352及354中可使用惰性載氣以運送反應物流其中一或多者，其可能或可能不是預先混合的。在各種實施例中，使用氬做為載氣以引入前驅物。可使用其它適合的載氣。可提供惰性氣體(例如氬)或另一氣體(例 如氮)或其組合做為背景氣體，同時具有還原劑或WCl5或WCl6氣體。在某些實施例中，背景氣體流是連續的，亦即其在整個方塊352及354中不被開啟及關閉。
不像PNL或ALD處理，方塊354通常可涉及連續地引入反應物直到沉積想要的量。在某些實施例中，CVD操作可發生在多個階段中，其中反應物之連續及同時流動之多個時期被一或更多反應物流動被轉向之時期所分隔開。流動亦可脈衝式輸送於介於約1秒與約2秒之間之脈衝時間內。在某些實施例中，反應物是連續流動於介於約400秒與約600秒之間之時間內。在CVD沉積期間內腔室壓力之示例範圍可從約10Torr至約500Torr、或約40Torr。
在某些實施例中，從方塊352至方塊354之轉變涉及在多站腔室中將基板從一沉積站移動至另一者。
設備
可使用任何適當的腔室以實施所揭露的實施例。示例的沉積設備包括各種系統，例如由Lam Research Corp.,of Fremont California發售之ALTUS®及ALTUS® Max、或各種其它商業上可獲得的處理系統之任何一者。處理可以在多沉積站上平行實施。
在某些實施例中，鎢成核處理是在第一站實施，該第一站是設置在單一沉積腔室中之二、五、或甚至更多沉積站其中一者。在某些實施例中，成核處理之不同步驟是在沉積腔室之二不同站加以實施。例如，基板可在第一站中暴露至二硼烷(B2H6)，該第一站使用個別的氣體供應系統，該個別的氣體供應系統在基板表面產生局部氛圍，接著可將基板傳送至第二站以暴露至前驅物(例如六氯化鎢WCl6)以沉積成核層。在某些實施例中，接著可將基板傳送回第一站以用於第二次暴露至二硼烷或傳送至第三站以用於第三反應物暴 露。接著，可將基板傳送至第二站以用於暴露至WCl6(或其它鎢氯化物)以完成鎢成核以及在相同或不同站中繼續進行主體鎢沉積。接著可使用一或更多站以實施化學氣相沉積(CVD)，如上所述。
圖4為根據本發明之實施例之適用於實施鎢沉積處理之處理系統之方塊圖。系統400包括傳送模組403。傳送模組403提供一乾淨、加壓的環境以當處理中基板在不同反應器模組之間移動時使它們的污染之風險最小化。安裝在傳送模組403上的是多站反應器409，多站反應器409能實施根據本發明實施例之CVD沉積以及成核層沉積(其可被稱為脈衝式成核層(PNL)沉積)。腔室409可包括可依序執行這些操作之多個站411、413、415及417。例如：腔室409可配置成使得站411及413執行PNL沉積，而站413及415執行CVD。每個沉積站可包括經加熱的晶圓支座及噴淋頭、分散板或其它氣體入口。
亦安裝在傳送模組403上的可為一或更多單一或多重站的模組407，其可執行電漿或化學(非電漿)預清潔。該模組亦可用於各種其它處理，例如：還原劑浸泡。系統400亦包括一或更多(在此例子中是兩個)晶圓來源模組401，其在處理之前和之後儲存晶圓。在常壓傳送腔室419中的常壓機械臂(atmospheric robot)(未顯示)首先將晶圓從來源模組401移動至負載鎖室(loadlock)421。在傳送模組403中之晶圓傳送裝置(通常為機械臂單元)從負載鎖室421將晶圓移動至安裝在傳送模組403上之複數模組及移動在該複數模組之間。
在某些實施例中，系統控制器429在沉積期間用於控制處理條件。控制器通常包括一或更多記憶裝置及一或更多處理器。處理器可包括CPU或電腦、類比及/或數位輸入/輸出連接、步進馬達控制器板等。
控制器可控制沉積設備的所有活動。系統控制器執行系統控制軟體，該系統控制軟體包括用於控制下述的指令集：時序、氣體混合、腔室壓力、 腔室溫度、晶圓溫度、射頻(RF)功率位準(若使用)、晶圓卡盤或支座位置、及特定處理之其它參數。儲存於記憶裝置與控制器有關的其它電腦程式可使用在某些實施例中。
通常，具有與控制器有關的使用者介面。該使用者介面可包括顯示螢幕、設備及/或處理條件的圖形軟體顯示器、及使用者輸入裝置，例如指向裝置、鍵盤、觸控螢幕、麥克風等。
系統控制邏輯可以任何適合的方式加以配置。通常，邏輯可被設計或配置在硬體及/或軟體中。控制驅動電路的指令可為硬編碼或被提供作為軟體。該等指令可由「程式設計」提供。這類的程式設計被理解為包括任何形式的邏輯，包括在數位訊號處理器、特殊應用積體電路、及具有實現為硬體之特定演算法之其它裝置。程式設計亦被理解為包括可在通用處理器上執行之軟體或韌體指令。系統控制軟體可以任何適合的電腦可讀程式設計語言加以編碼。或者，控制邏輯可硬編碼在控制器中。特殊應用積體電路、可程式邏輯裝置(例如：現場可程式閘陣列(field-programmable gate array)或FPGA)等可用於這些目的。在以下的討論中，無論「軟體」或「編碼」於何處使用，功能上相當的硬編碼邏輯可在這些地方使用。
用於控制在處理序列中之沉積及其它處理之電腦程式碼可以任何習知的電腦可讀程式設計語言撰寫：例如，組合語言、C、C++、巴斯卡(Pascal)、福傳(Fortran)、或其它。編譯的目的碼或腳本係由處理器實行以執行在程式中所確定的任務。
控制器參數涉及處理條件，例如：處理氣體成分及流率、溫度、壓力、電漿條件(例如RF功率位準及低頻RF頻率)、冷卻氣體壓力、及腔室壁溫度。這些參數係以配方的形式提供給使用者，並且可利用使用者介面加以輸入。
可藉由系統控制器之類比及/或數位輸入連接以提供用於監控處理之訊號。用於控制處理之訊號係輸出在沉積設備之類比及數位輸出連接上。
系統軟體可以許多不同的方式設計或配置。例如：各種腔室元件副程式(subroutine)或控制物件可被撰寫，以控制執行本發明之沉積處理所需的腔室元件之操作。為了此目的之程式或程式部分之範例包含基板定位碼、處理氣體控制碼、壓力控制碼、加熱器控制碼、及電漿控制碼。
基板定位程式可包括用以控制腔室元件之程式碼，用以裝載基板至支座或卡盤之上、以及用以控制在基板與腔室其它部分(例如氣體入口及/或目標物)之間之間距。處理氣體控制程式可包括程式碼，用於控制氣體成分及流率，及選擇性地用於在沉積之前使氣體流入腔室中以穩定腔室中之壓力。壓力控制程式可包括程式碼，用於藉由調節，例如，腔室排氣系統中之節流閥以控制腔室中之壓力。加熱器控制程式可包括控制電流至用以加熱基板之加熱單元的碼。或者，該加熱器控制程式可控制加熱轉移氣體(例如氦氣)之遞送至晶圓卡盤。
於沉積期間可被監控之腔室感測器的例子包括：質量流量控制器、壓力感測器(例如壓力計)、及位於支座或卡盤中之熱電偶。適當編程的反饋及控制演算法可與來自這些感測器的資料一起使用以維持想要的處理條件。以上描述在單一或多腔室半導體處理工具內所揭露實施例的實施方式。
以上描述在單一或多腔室半導體處理工具內所揭露實施例的實施方式。在此描述之設備及處理可結合微影圖案化的工具或處理而使用，例如，半導體元件、顯示器、LED、太陽光電板等之製造或生產。通常，雖然不一定，這樣的工具/處理將一起使用或執行於共同的製造設施內。膜之微影圖案化通常包含一些或全部下述步驟，每個步驟以幾個可能的工具提供：(1)工件(亦即基板)上光阻之塗佈，使用旋轉式或噴塗式之工具；(2)光阻之固化，使 用加熱板或加熱爐或UV固化工具；(3)以工具(例如晶圓步進機)使光阻暴露於可見光或UV或x射線光；(4)使光阻顯影以便使用工具(例如溼式清洗台)選擇性地移除光阻及從而使其圖案化；(5)藉由使用乾式或電漿輔助蝕刻工具轉移光阻圖案至下方膜或工件中；及(6)使用工具(例如RF或微波電漿光阻剝除器)移除光阻。
結論
雖然上述實施例為了清楚理解之目的已經利用一些細節加以描述，但顯然地，某些改變和修飾可在隨附申請專利範圍之範疇中實施。應注意，有許多執行本發明實施例之處理、系統及設備之替代方式。因此，應將本發明實施例視為說明性的而非限制性的，且該等實施例不受限於本文所提出之細節。
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Claims (26)

  1. 一種在基板上沉積鎢的方法，該方法包括：脈衝式輸送還原劑，其中該還原劑係含硼(B)的、含矽(Si)的或含鍺(Ge)的；及脈衝式輸送鎢氯化物前驅物，其中藉由該還原劑或其產物將該鎢氯化物前驅物還原，以形成多成分含鎢膜在該基板上，該多成分含鎢膜包括B、Si及Ge其中一或多者，其中該多成分含鎢膜包括介於5%與60%原子百分比之間的B、Si、或Ge。
  2. 如申請專利範圍第1項之在基板上沉積鎢的方法，更包括：脈衝式輸送第三反應物，以形成三元含鎢膜。
  3. 如申請專利範圍第1項之在基板上沉積鎢的方法，其中該多成分含鎢膜係二元膜。
  4. 如申請專利範圍第1項之在基板上沉積鎢的方法，其中該多成分含鎢膜係用於字元線之擴散阻障物。
  5. 如申請專利範圍第1項之在基板上沉積鎢的方法，其中該多成分含鎢膜係用於金屬閘極之功函數層。
  6. 如申請專利範圍第1項之在基板上沉積鎢的方法，其中在該鎢氯化物脈衝期間之基板溫度係至少400℃。
  7. 如申請專利範圍第1項之在基板上沉積鎢的方法，其中在該鎢氯化物脈衝期間之基板溫度係至少450℃。
  8. 如申請專利範圍第1項之在基板上沉積鎢的方法，其中在該鎢氯化物脈衝期間之基板溫度係至少500℃。
  9. 如申請專利範圍第1項之在基板上沉積鎢的方法，其中在該等還原劑及鎢氯化物脈衝期間之基板溫度係至少400℃。
  10. 如申請專利範圍第1項之在基板上沉積鎢的方法，其中在該等還原劑及鎢氯化物脈衝期間之基板溫度係至少450℃。
  11. 如申請專利範圍第1項之在基板上沉積鎢的方法，其中在該等還原劑及鎢氯化物脈衝期間之基板溫度係至少500℃。
  12. 如申請專利範圍第1項之在基板上沉積鎢的方法，更包括：沉積主體鎢(W)層在該多成分含鎢膜上。
  13. 如申請專利範圍第12項之在基板上沉積鎢的方法，其中藉由在鎢氯化物前驅物與還原劑之間之化學氣相沉積(CVD)反應以沉積該主體W層。
  14. 如申請專利範圍第12項之在基板上沉積鎢的方法，其中該主體W層係直接沉積在該多成分含鎢膜上而沒有中介層。
  15. 如申請專利範圍第1項之在基板上沉積鎢的方法，其中該多成分含鎢膜係直接沉積在絕緣膜上。
  16. 如申請專利範圍第15項之在基板上沉積鎢的方法，其中該絕緣膜係氧化物或氮化物膜。
  17. 如申請專利範圍第1項之在基板上沉積鎢的方法，該方法更包括該還原劑之分解，以形成一層B、Si或Ge在該基板上。
  18. 如申請專利範圍第1項之在基板上沉積鎢的方法，其中該多成分含鎢膜係選自於由WGex、WGexNy、WGexCy、WBxGeyNz、以及WGexCyNz所組成之群組，其中x、y、以及z為大於零之數字。
  19. 一種記憶體結構，包括：多成分含鎢膜之襯墊層，該多成分含鎢膜包括B、Si及Ge其中一或多者，其中該多成分含鎢膜包括介於5%與60%原子百分比之間的B、Si、或Ge；及 鎢字元線。
  20. 一種記憶體結構，包括：多成分含鎢膜之功函數層，該多成分含鎢膜包括B、Si及Ge其中一或多者，其中該多成分含鎢膜包括介於5%與60%原子百分比之間的B、Si、或Ge；及金屬閘極。
  21. 一種在基板上沉積多成分含鎢擴散阻障層的方法，該方法包括：沉積多成分含鎢擴散阻障層在基板的介電表面上，其中沉積該多成分含鎢擴散阻障層包括使該基板暴露至還原劑與鎢氯化物的交替脈衝，其中該還原劑係選自於含硼還原劑、含矽還原劑、以及含鍺還原劑，其中該多成分含鎢擴散阻障層包括介於5%與60%原子百分比之間的B、Si、或Ge；及沉積主體鎢層在該多成分含鎢擴散阻障層上。
  22. 如申請專利範圍第21項之在基板上沉積多成分含鎢擴散阻障層的方法，其中該多成分含鎢擴散阻障層係三元或四元含鎢膜。
  23. 如申請專利範圍第22項之在基板上沉積多成分含鎢擴散阻障層的方法，更包括：脈衝式輸送第三反應物，以形成該多成分含鎢擴散阻障層。
  24. 如申請專利範圍第23項之在基板上沉積多成分含鎢擴散阻障層的方法，其中該第三反應物係含氮反應物，以及該多成分含鎢擴散阻障層包括由該含氮反應物所提供的氮。
  25. 如申請專利範圍第23項之在基板上沉積多成分含鎢擴散阻障層的方法，其中該第三反應物係含碳反應物，以及該多成分含鎢擴散阻障層包括由該含碳反應物所提供的碳。
  26. 如申請專利範圍第21項之在基板上沉積多成分含鎢擴散阻障層的方法，其中該多成分含鎢擴散阻障層係選自於由四元含矽化合物與WSixNy及WSixCy所組成之群組，其中x以及y為大於零之數字。
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