TWI616932B - Exposure device and component manufacturing method - Google Patents
Exposure device and component manufacturing method Download PDFInfo
- Publication number
- TWI616932B TWI616932B TW105115519A TW105115519A TWI616932B TW I616932 B TWI616932 B TW I616932B TW 105115519 A TW105115519 A TW 105115519A TW 105115519 A TW105115519 A TW 105115519A TW I616932 B TWI616932 B TW I616932B
- Authority
- TW
- Taiwan
- Prior art keywords
- liquid
- substrate
- exposure apparatus
- optical system
- projection optical
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/52—Details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7007—Alignment other than original with workpiece
- G03F9/7015—Reference, i.e. alignment of original or workpiece with respect to a reference not on the original or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7096—Arrangement, mounting, housing, environment, cleaning or maintenance of apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Plasma & Fusion (AREA)
- Multimedia (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Microscoopes, Condenser (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003146423 | 2003-05-23 | ||
| JP2003305280 | 2003-08-28 | ||
| JP2004049231 | 2004-02-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201635346A TW201635346A (zh) | 2016-10-01 |
| TWI616932B true TWI616932B (zh) | 2018-03-01 |
Family
ID=33479649
Family Applications (8)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105115519A TWI616932B (zh) | 2003-05-23 | 2004-05-21 | Exposure device and component manufacturing method |
| TW093114406A TW200509205A (en) | 2003-05-23 | 2004-05-21 | Exposure method and device-manufacturing method |
| TW098124949A TWI424470B (zh) | 2003-05-23 | 2004-05-21 | A method of manufacturing an exposure apparatus and an element |
| TW100116612A TWI474380B (zh) | 2003-05-23 | 2004-05-21 | A method of manufacturing an exposure apparatus and an element |
| TW106135828A TW201806001A (zh) | 2003-05-23 | 2004-05-21 | 曝光裝置及元件製造方法 |
| TW100136676A TWI503865B (zh) | 2003-05-23 | 2004-05-21 | A method of manufacturing an exposure apparatus and an element |
| TW103145927A TWI612556B (zh) | 2003-05-23 | 2004-05-21 | 曝光裝置、曝光方法及元件製造方法 |
| TW101102376A TWI518742B (zh) | 2003-05-23 | 2004-05-21 | A method of manufacturing an exposure apparatus and an element |
Family Applications After (7)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093114406A TW200509205A (en) | 2003-05-23 | 2004-05-21 | Exposure method and device-manufacturing method |
| TW098124949A TWI424470B (zh) | 2003-05-23 | 2004-05-21 | A method of manufacturing an exposure apparatus and an element |
| TW100116612A TWI474380B (zh) | 2003-05-23 | 2004-05-21 | A method of manufacturing an exposure apparatus and an element |
| TW106135828A TW201806001A (zh) | 2003-05-23 | 2004-05-21 | 曝光裝置及元件製造方法 |
| TW100136676A TWI503865B (zh) | 2003-05-23 | 2004-05-21 | A method of manufacturing an exposure apparatus and an element |
| TW103145927A TWI612556B (zh) | 2003-05-23 | 2004-05-21 | 曝光裝置、曝光方法及元件製造方法 |
| TW101102376A TWI518742B (zh) | 2003-05-23 | 2004-05-21 | A method of manufacturing an exposure apparatus and an element |
Country Status (7)
| Country | Link |
|---|---|
| US (14) | US7388649B2 (cg-RX-API-DMAC7.html) |
| EP (10) | EP2466618A3 (cg-RX-API-DMAC7.html) |
| JP (13) | JP5440228B2 (cg-RX-API-DMAC7.html) |
| KR (10) | KR101508811B1 (cg-RX-API-DMAC7.html) |
| HK (1) | HK1221072A1 (cg-RX-API-DMAC7.html) |
| TW (8) | TWI616932B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2004105107A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (175)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1420300B1 (en) * | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| SG121818A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| CN100568101C (zh) | 2002-11-12 | 2009-12-09 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
| US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| EP1571694A4 (en) * | 2002-12-10 | 2008-10-15 | Nikon Corp | EXPOSURE APPARATUS AND METHOD FOR MANUFACTURING THE DEVICE |
| WO2004090952A1 (ja) | 2003-04-09 | 2004-10-21 | Nikon Corporation | 露光方法及び装置、並びにデバイス製造方法 |
| WO2004093160A2 (en) * | 2003-04-10 | 2004-10-28 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
| EP2161621B1 (en) | 2003-04-11 | 2018-10-24 | Nikon Corporation | Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus |
| SG139734A1 (en) | 2003-04-11 | 2008-02-29 | Nikon Corp | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
| TWI616932B (zh) | 2003-05-23 | 2018-03-01 | Nikon Corp | Exposure device and component manufacturing method |
| US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP2261741A3 (en) | 2003-06-11 | 2011-05-25 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR101528089B1 (ko) | 2003-06-13 | 2015-06-11 | 가부시키가이샤 니콘 | 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법 |
| US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
| KR101265454B1 (ko) | 2003-06-19 | 2013-05-16 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조방법 |
| EP1491956B1 (en) | 2003-06-27 | 2006-09-06 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP3862678B2 (ja) * | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
| WO2005010962A1 (ja) | 2003-07-28 | 2005-02-03 | Nikon Corporation | 露光装置及びデバイス製造方法、並びに露光装置の制御方法 |
| KR20180120816A (ko) * | 2003-08-21 | 2018-11-06 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| EP1670039B1 (en) | 2003-08-29 | 2014-06-04 | Nikon Corporation | Exposure apparatus and device producing method |
| KR101248325B1 (ko) * | 2003-09-26 | 2013-03-27 | 가부시키가이샤 니콘 | 투영노광장치 및 투영노광장치의 세정방법, 메인터넌스방법 그리고 디바이스의 제조방법 |
| WO2005036621A1 (ja) | 2003-10-08 | 2005-04-21 | Zao Nikon Co., Ltd. | 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法 |
| TWI474132B (zh) | 2003-10-28 | 2015-02-21 | 尼康股份有限公司 | 照明光學裝置、投影曝光裝置、曝光方法以及元件製造方法 |
| CN100461336C (zh) * | 2003-10-31 | 2009-02-11 | 株式会社尼康 | 曝光装置以及器件制造方法 |
| TWI361450B (en) * | 2003-10-31 | 2012-04-01 | Nikon Corp | Platen, stage device, exposure device and exposure method |
| JP2005159322A (ja) * | 2003-10-31 | 2005-06-16 | Nikon Corp | 定盤、ステージ装置及び露光装置並びに露光方法 |
| US7528929B2 (en) | 2003-11-14 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| TWI512335B (zh) | 2003-11-20 | 2015-12-11 | 尼康股份有限公司 | 光束變換元件、光學照明裝置、曝光裝置、以及曝光方法 |
| CN102163004B (zh) | 2003-12-03 | 2014-04-09 | 株式会社尼康 | 曝光装置、曝光方法和器件制造方法 |
| US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
| US7990516B2 (en) | 2004-02-03 | 2011-08-02 | Nikon Corporation | Immersion exposure apparatus and device manufacturing method with liquid detection apparatus |
| TWI379344B (en) | 2004-02-06 | 2012-12-11 | Nikon Corp | Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method |
| US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1724815B1 (en) | 2004-02-10 | 2012-06-13 | Nikon Corporation | Aligner, device manufacturing method, maintenance method and aligning method |
| US7616383B2 (en) * | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2005119368A2 (en) * | 2004-06-04 | 2005-12-15 | Carl Zeiss Smt Ag | System for measuring the image quality of an optical imaging system |
| EP2966670B1 (en) * | 2004-06-09 | 2017-02-22 | Nikon Corporation | Exposure apparatus and device manufacturing method |
| KR101228244B1 (ko) * | 2004-06-21 | 2013-01-31 | 가부시키가이샤 니콘 | 노광 장치 및 그 부재의 세정 방법, 노광 장치의메인터넌스 방법, 메인터넌스 기기, 그리고 디바이스 제조방법 |
| JP5119666B2 (ja) | 2004-06-21 | 2013-01-16 | 株式会社ニコン | 露光装置、液体除去方法、及びデバイス製造方法 |
| US8698998B2 (en) | 2004-06-21 | 2014-04-15 | Nikon Corporation | Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device |
| US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| DE602005016429D1 (de) | 2004-07-12 | 2009-10-15 | Nippon Kogaku Kk | Hren |
| JP2006041046A (ja) * | 2004-07-23 | 2006-02-09 | Canon Inc | 光電計測装置及び露光装置 |
| US7224427B2 (en) * | 2004-08-03 | 2007-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Megasonic immersion lithography exposure apparatus and method |
| DE602005021653D1 (de) * | 2004-08-03 | 2010-07-15 | Nippon Kogaku Kk | Belichtungsgeräte, belichtungsverfahren und bauelemente-herstellungsverfahren |
| WO2006019124A1 (ja) | 2004-08-18 | 2006-02-23 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| US7701550B2 (en) * | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| SG155927A1 (en) * | 2004-09-17 | 2009-10-29 | Nikon Corp | Substrate holding device, exposure apparatus, and device manufacturing method |
| US7385670B2 (en) * | 2004-10-05 | 2008-06-10 | Asml Netherlands B.V. | Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus |
| CN101866113B (zh) | 2004-10-26 | 2013-04-24 | 株式会社尼康 | 衬底处理方法、曝光装置及器件制造方法 |
| US7446850B2 (en) | 2004-12-03 | 2008-11-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7804576B2 (en) | 2004-12-06 | 2010-09-28 | Nikon Corporation | Maintenance method, maintenance device, exposure apparatus, and device manufacturing method |
| JP4752473B2 (ja) | 2004-12-09 | 2011-08-17 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
| US7880860B2 (en) * | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7528931B2 (en) | 2004-12-20 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7450217B2 (en) | 2005-01-12 | 2008-11-11 | Asml Netherlands B.V. | Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby |
| US7324185B2 (en) | 2005-03-04 | 2008-01-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
| US20060232753A1 (en) * | 2005-04-19 | 2006-10-19 | Asml Holding N.V. | Liquid immersion lithography system with tilted liquid flow |
| US7433016B2 (en) | 2005-05-03 | 2008-10-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8248577B2 (en) | 2005-05-03 | 2012-08-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR101544336B1 (ko) | 2005-05-12 | 2015-08-12 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치 및 노광 방법 |
| US7924416B2 (en) | 2005-06-22 | 2011-04-12 | Nikon Corporation | Measurement apparatus, exposure apparatus, and device manufacturing method |
| JPWO2006137440A1 (ja) * | 2005-06-22 | 2009-01-22 | 株式会社ニコン | 計測装置及び露光装置、並びにデバイス製造方法 |
| JP2007012375A (ja) * | 2005-06-29 | 2007-01-18 | Toyota Motor Corp | 燃料電池、燃料電池用電極触媒層の製造方法、及び燃料電池の運転方法 |
| EP1909310A4 (en) * | 2005-07-11 | 2010-10-06 | Nikon Corp | EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS |
| JP5011676B2 (ja) * | 2005-08-12 | 2012-08-29 | 株式会社日立製作所 | 表示装置を備える機器 |
| US8780326B2 (en) * | 2005-09-09 | 2014-07-15 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| US7929109B2 (en) | 2005-10-20 | 2011-04-19 | Nikon Corporation | Apparatus and method for recovering liquid droplets in immersion lithography |
| JP4735186B2 (ja) * | 2005-10-21 | 2011-07-27 | 株式会社ニコン | 液浸顕微鏡装置 |
| US7986395B2 (en) * | 2005-10-24 | 2011-07-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography apparatus and methods |
| US7773195B2 (en) | 2005-11-29 | 2010-08-10 | Asml Holding N.V. | System and method to increase surface tension and contact angle in immersion lithography |
| US8125610B2 (en) * | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
| US7649611B2 (en) | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4889331B2 (ja) * | 2006-03-22 | 2012-03-07 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
| US7709813B2 (en) * | 2006-04-03 | 2010-05-04 | Nikon Corporation | Incidence surfaces and optical windows that are solvophobic to immersion liquids |
| TW200805000A (en) | 2006-05-18 | 2008-01-16 | Nikon Corp | Exposure method and apparatus, maintenance method and device manufacturing method |
| EP2034514A4 (en) * | 2006-05-22 | 2012-01-11 | Nikon Corp | EXPOSURE METHOD AND APPARATUS, MAINTENANCE METHOD, AND METHOD OF MANUFACTURING THE DEVICE THEREFOR |
| US7969548B2 (en) * | 2006-05-22 | 2011-06-28 | Asml Netherlands B.V. | Lithographic apparatus and lithographic apparatus cleaning method |
| WO2007136089A1 (ja) * | 2006-05-23 | 2007-11-29 | Nikon Corporation | メンテナンス方法、露光方法及び装置、並びにデバイス製造方法 |
| US20070273856A1 (en) * | 2006-05-25 | 2007-11-29 | Nikon Corporation | Apparatus and methods for inhibiting immersion liquid from flowing below a substrate |
| WO2007139017A1 (ja) * | 2006-05-29 | 2007-12-06 | Nikon Corporation | 液体回収部材、基板保持部材、露光装置、及びデバイス製造方法 |
| US7532309B2 (en) * | 2006-06-06 | 2009-05-12 | Nikon Corporation | Immersion lithography system and method having an immersion fluid containment plate for submerging the substrate to be imaged in immersion fluid |
| US8564759B2 (en) | 2006-06-29 | 2013-10-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for immersion lithography |
| EP2043134A4 (en) * | 2006-06-30 | 2012-01-25 | Nikon Corp | MAINTENANCE METHOD, EXPOSURE METHOD, AND DEVICE AND DEVICE MANUFACTURING METHOD |
| EP1895365B1 (en) * | 2006-08-28 | 2009-05-13 | Interuniversitair Microelektronica Centrum ( Imec) | Method and system for measuring contamination of a lithographical element |
| US8570484B2 (en) | 2006-08-30 | 2013-10-29 | Nikon Corporation | Immersion exposure apparatus, device manufacturing method, cleaning method, and cleaning member to remove foreign substance using liquid |
| US7826030B2 (en) * | 2006-09-07 | 2010-11-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2008029884A1 (en) * | 2006-09-08 | 2008-03-13 | Nikon Corporation | Cleaning member, cleaning method and device manufacturing method |
| US20080100812A1 (en) * | 2006-10-26 | 2008-05-01 | Nikon Corporation | Immersion lithography system and method having a wafer chuck made of a porous material |
| JP5055971B2 (ja) * | 2006-11-16 | 2012-10-24 | 株式会社ニコン | 表面処理方法及び表面処理装置、露光方法及び露光装置、並びにデバイス製造方法 |
| US9632425B2 (en) | 2006-12-07 | 2017-04-25 | Asml Holding N.V. | Lithographic apparatus, a dryer and a method of removing liquid from a surface |
| JP2008192854A (ja) * | 2007-02-05 | 2008-08-21 | Canon Inc | 液浸露光装置 |
| US8654305B2 (en) * | 2007-02-15 | 2014-02-18 | Asml Holding N.V. | Systems and methods for insitu lens cleaning in immersion lithography |
| US8817226B2 (en) | 2007-02-15 | 2014-08-26 | Asml Holding N.V. | Systems and methods for insitu lens cleaning using ozone in immersion lithography |
| JP4366407B2 (ja) * | 2007-02-16 | 2009-11-18 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| US20080198347A1 (en) * | 2007-02-16 | 2008-08-21 | Canon Kabushiki Kaisha | Immersion exposure apparatus and method of manufacturing device |
| JP2008218653A (ja) * | 2007-03-02 | 2008-09-18 | Canon Inc | 露光装置及びデバイス製造方法 |
| US8237911B2 (en) | 2007-03-15 | 2012-08-07 | Nikon Corporation | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
| JP2008258324A (ja) * | 2007-04-03 | 2008-10-23 | Canon Inc | 露光装置及びデバイスの製造方法 |
| US8011377B2 (en) | 2007-05-04 | 2011-09-06 | Asml Netherlands B.V. | Cleaning device and a lithographic apparatus cleaning method |
| US8947629B2 (en) | 2007-05-04 | 2015-02-03 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
| US7866330B2 (en) | 2007-05-04 | 2011-01-11 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
| US7841352B2 (en) | 2007-05-04 | 2010-11-30 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
| JP2008283052A (ja) * | 2007-05-11 | 2008-11-20 | Toshiba Corp | 液浸露光装置および半導体装置の製造方法 |
| JP2009033111A (ja) * | 2007-05-28 | 2009-02-12 | Nikon Corp | 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法 |
| US8514365B2 (en) * | 2007-06-01 | 2013-08-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20090014030A1 (en) * | 2007-07-09 | 2009-01-15 | Asml Netherlands B.V. | Substrates and methods of using those substrates |
| US7916269B2 (en) | 2007-07-24 | 2011-03-29 | Asml Netherlands B.V. | Lithographic apparatus and contamination removal or prevention method |
| US9019466B2 (en) | 2007-07-24 | 2015-04-28 | Asml Netherlands B.V. | Lithographic apparatus, reflective member and a method of irradiating the underside of a liquid supply system |
| US8451427B2 (en) | 2007-09-14 | 2013-05-28 | Nikon Corporation | Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method |
| NL1035942A1 (nl) * | 2007-09-27 | 2009-03-30 | Asml Netherlands Bv | Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus. |
| SG151198A1 (en) * | 2007-09-27 | 2009-04-30 | Asml Netherlands Bv | Methods relating to immersion lithography and an immersion lithographic apparatus |
| JP2009094145A (ja) * | 2007-10-04 | 2009-04-30 | Canon Inc | 露光装置、露光方法およびデバイス製造方法 |
| JP5267029B2 (ja) | 2007-10-12 | 2013-08-21 | 株式会社ニコン | 照明光学装置、露光装置及びデバイスの製造方法 |
| CN101681123B (zh) | 2007-10-16 | 2013-06-12 | 株式会社尼康 | 照明光学系统、曝光装置以及元件制造方法 |
| SG10201602750RA (en) | 2007-10-16 | 2016-05-30 | Nikon Corp | Illumination Optical System, Exposure Apparatus, And Device Manufacturing Method |
| US8379187B2 (en) | 2007-10-24 | 2013-02-19 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| JP5017232B2 (ja) * | 2007-10-31 | 2012-09-05 | エーエスエムエル ネザーランズ ビー.ブイ. | クリーニング装置および液浸リソグラフィ装置 |
| US9116346B2 (en) | 2007-11-06 | 2015-08-25 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
| NL1036273A1 (nl) * | 2007-12-18 | 2009-06-19 | Asml Netherlands Bv | Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus. |
| NL1036306A1 (nl) * | 2007-12-20 | 2009-06-23 | Asml Netherlands Bv | Lithographic apparatus and in-line cleaning apparatus. |
| US8339572B2 (en) | 2008-01-25 | 2012-12-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20100039628A1 (en) * | 2008-03-19 | 2010-02-18 | Nikon Corporation | Cleaning tool, cleaning method, and device fabricating method |
| NL1036631A1 (nl) * | 2008-03-24 | 2009-09-25 | Asml Netherlands Bv | Immersion Lithographic Apparatus and Device Manufacturing Method. |
| NL1036709A1 (nl) * | 2008-04-24 | 2009-10-27 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
| US8421993B2 (en) * | 2008-05-08 | 2013-04-16 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
| EP2249205B1 (en) * | 2008-05-08 | 2012-03-07 | ASML Netherlands BV | Immersion lithographic apparatus, drying device, immersion metrology apparatus and device manufacturing method |
| CN105606344B (zh) | 2008-05-28 | 2019-07-30 | 株式会社尼康 | 照明光学系统、照明方法、曝光装置以及曝光方法 |
| US9176393B2 (en) | 2008-05-28 | 2015-11-03 | Asml Netherlands B.V. | Lithographic apparatus and a method of operating the apparatus |
| TW201009895A (en) * | 2008-08-11 | 2010-03-01 | Nikon Corp | Exposure apparatus, maintaining method and device fabricating method |
| NL2003363A (en) | 2008-09-10 | 2010-03-15 | Asml Netherlands Bv | Lithographic apparatus, method of manufacturing an article for a lithographic apparatus and device manufacturing method. |
| NL2003333A (en) * | 2008-10-23 | 2010-04-26 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
| TWI438577B (zh) | 2008-12-08 | 2014-05-21 | Asml Netherlands Bv | 微影裝置及器件製造方法 |
| JP2010140958A (ja) * | 2008-12-09 | 2010-06-24 | Canon Inc | 露光装置及びデバイス製造方法 |
| SG173172A1 (en) | 2009-01-28 | 2011-08-29 | Advanced Tech Materials | Lithographic tool in situ clean formulations |
| GB2469112A (en) | 2009-04-03 | 2010-10-06 | Mapper Lithography Ip Bv | Wafer support using controlled capillary liquid layer to hold and release wafer |
| DE102009015717B4 (de) * | 2009-03-31 | 2012-12-13 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Verfahren und System zum Erkennen einer Teilchenkontamination in einer Immersionslithographieanlage |
| NL2004362A (en) * | 2009-04-10 | 2010-10-12 | Asml Netherlands Bv | A fluid handling device, an immersion lithographic apparatus and a device manufacturing method. |
| US20110153387A1 (en) * | 2009-12-17 | 2011-06-23 | Google Inc. | Customizing surveys |
| NL2005717A (en) * | 2009-12-18 | 2011-06-21 | Asml Netherlands Bv | A lithographic apparatus and a device manufacturing method. |
| EP2381310B1 (en) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Fluid handling structure and lithographic apparatus |
| NL2006818A (en) * | 2010-07-02 | 2012-01-03 | Asml Netherlands Bv | A method of adjusting speed and/or routing of a table movement plan and a lithographic apparatus. |
| US9632426B2 (en) * | 2011-01-18 | 2017-04-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | In-situ immersion hood cleaning |
| JP2012256000A (ja) * | 2011-06-10 | 2012-12-27 | Sanyo Electric Co Ltd | 投写型映像表示装置 |
| TWI447843B (zh) * | 2011-12-02 | 2014-08-01 | Univ Nat Central | 晶圓定位方法及其系統 |
| CA3085086C (en) | 2011-12-06 | 2023-08-08 | Delta Faucet Company | Ozone distribution in a faucet |
| KR101671787B1 (ko) | 2012-05-29 | 2016-11-02 | 에이에스엠엘 네델란즈 비.브이. | 지지 장치, 리소그래피 장치 및 디바이스 제조 방법 |
| JP6313585B2 (ja) * | 2013-12-10 | 2018-04-18 | キヤノン株式会社 | 露光装置及び物品の製造方法 |
| US9658536B2 (en) * | 2014-02-25 | 2017-05-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | In-line inspection and clean for immersion lithography |
| WO2015133391A1 (ja) * | 2014-03-07 | 2015-09-11 | 富士フイルム株式会社 | トランジスタの製造方法 |
| WO2015193036A1 (en) | 2014-06-16 | 2015-12-23 | Asml Netherlands B.V. | Lithographic apparatus, method of transferring a substrate and device manufacturing method |
| KR101895018B1 (ko) * | 2014-06-19 | 2018-09-04 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치, 대상물 위치설정 시스템 및 디바이스 제조 방법 |
| CN112162465B (zh) * | 2015-03-31 | 2023-06-20 | 株式会社尼康 | 曝光装置、平面显示器的制造方法、元件制造方法、及曝光方法 |
| KR102426760B1 (ko) * | 2015-04-24 | 2022-07-29 | 엘지이노텍 주식회사 | 헤드 마운트 디스플레이 장치 |
| WO2017112795A1 (en) | 2015-12-21 | 2017-06-29 | Delta Faucet Company | Fluid delivery system including a disinfectant device |
| JP6207671B1 (ja) * | 2016-06-01 | 2017-10-04 | キヤノン株式会社 | パターン形成装置、基板配置方法及び物品の製造方法 |
| CN107966880B (zh) * | 2017-03-15 | 2019-01-11 | 上海微电子装备(集团)股份有限公司 | 一种用于光刻机的垂向控制方法 |
| JP6985102B2 (ja) * | 2017-10-31 | 2021-12-22 | 株式会社ディスコ | レーザー加工装置 |
| JP7219230B2 (ja) | 2017-12-22 | 2023-02-07 | ソニーグループ株式会社 | コンタクトレンズおよび通信システム |
| JP6933608B2 (ja) * | 2018-06-01 | 2021-09-08 | ファナック株式会社 | 視覚センサのレンズまたはレンズカバーの異常検出システム |
| WO2020064265A1 (en) | 2018-09-24 | 2020-04-02 | Asml Netherlands B.V. | A process tool and an inspection method |
| CN110597021B (zh) * | 2019-09-20 | 2021-04-23 | 上海华力微电子有限公司 | 浸没式光刻工艺中晶圆表面残水缺陷的改善方法 |
| JP7427461B2 (ja) * | 2020-02-06 | 2024-02-05 | キヤノン株式会社 | 露光装置、及び物品の製造方法 |
| JP7038163B2 (ja) * | 2020-05-18 | 2022-03-17 | 本田技研工業株式会社 | 外観検査システム |
| JP7536571B2 (ja) | 2020-09-15 | 2024-08-20 | キオクシア株式会社 | 位置計測装置及び計測方法 |
| CN116348820A (zh) * | 2020-12-23 | 2023-06-27 | Asml荷兰有限公司 | 流体处理系统、方法以及光刻设备 |
| CN113189849B (zh) * | 2021-04-22 | 2023-08-11 | 中国科学院光电技术研究所 | 一种近场光刻浸没系统及其浸没单元和接口模组 |
| US11761905B2 (en) * | 2021-08-26 | 2023-09-19 | Taiwan Semiconductor Manufacturing Company Limited | Inspection layer to improve the detection of defects through optical systems and methods of inspecting semiconductor device for defects |
| DE102023135389A1 (de) * | 2023-12-15 | 2025-06-18 | Nikon Slm Solutions Ag | Reinigungssystem und -verfahren zum Reinigen eines Optikelements in einer Optikeinheit einer Anlage für additive Fertigung |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999049504A1 (fr) * | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
| TW200300269A (en) * | 2001-11-02 | 2003-05-16 | Toshiba Kk | Exposure method and apparatus |
Family Cites Families (306)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3139101A (en) | 1962-07-23 | 1964-06-30 | Gen Motors Corp | Sonic surface cleaner |
| GB1242527A (en) * | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
| NL7606482A (nl) * | 1976-06-16 | 1977-12-20 | Philips Nv | Eenkristzl van calcium-gallium-germanium granaat, alsmede substraat vervaardigd van een dergelijk eenkristzl met een epitaxiaal opgegroeide beldo- meinfilm. |
| DE2963537D1 (en) | 1979-07-27 | 1982-10-07 | Tabarelli Werner W | Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer |
| US4509852A (en) * | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
| US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
| JPS57117238A (en) | 1981-01-14 | 1982-07-21 | Nippon Kogaku Kk <Nikon> | Exposing and baking device for manufacturing integrated circuit with illuminometer |
| JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
| JPS57153433U (cg-RX-API-DMAC7.html) | 1981-03-20 | 1982-09-27 | ||
| JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
| JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
| DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
| DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
| JPS6197918A (ja) * | 1984-10-19 | 1986-05-16 | Hitachi Ltd | X線露光装置 |
| JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
| JPS62121417A (ja) * | 1985-11-22 | 1987-06-02 | Hitachi Ltd | 液浸対物レンズ装置 |
| JPH0782981B2 (ja) | 1986-02-07 | 1995-09-06 | 株式会社ニコン | 投影露光方法及び装置 |
| JPH0695511B2 (ja) * | 1986-09-17 | 1994-11-24 | 大日本スクリ−ン製造株式会社 | 洗浄乾燥処理方法 |
| JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
| JP2897355B2 (ja) | 1990-07-05 | 1999-05-31 | 株式会社ニコン | アライメント方法,露光装置,並びに位置検出方法及び装置 |
| JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
| JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
| JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
| JPH05100182A (ja) * | 1991-10-11 | 1993-04-23 | Nikon Corp | レーザトラツプ集塵装置及び集塵方法 |
| JPH05304072A (ja) | 1992-04-08 | 1993-11-16 | Nec Corp | 半導体装置の製造方法 |
| JPH06459A (ja) * | 1992-06-19 | 1994-01-11 | T H I Syst Kk | 洗浄乾燥方法とその装置 |
| JP3246615B2 (ja) | 1992-07-27 | 2002-01-15 | 株式会社ニコン | 照明光学装置、露光装置、及び露光方法 |
| JPH06188169A (ja) | 1992-08-24 | 1994-07-08 | Canon Inc | 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法 |
| JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
| JP2753930B2 (ja) | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
| JPH06181157A (ja) | 1992-12-15 | 1994-06-28 | Nikon Corp | 低発塵性の装置 |
| JP2520833B2 (ja) | 1992-12-21 | 1996-07-31 | 東京エレクトロン株式会社 | 浸漬式の液処理装置 |
| JP3412704B2 (ja) | 1993-02-26 | 2003-06-03 | 株式会社ニコン | 投影露光方法及び装置、並びに露光装置 |
| JP3306961B2 (ja) * | 1993-03-08 | 2002-07-24 | 株式会社ニコン | 露光装置及び露光方法 |
| WO1994020114A1 (en) | 1993-03-12 | 1994-09-15 | Board Of Regents, The University Of Texas System | Anthracyclines with unusually high activity against cells resistant to doxorubicin and its analogs |
| JPH0750246A (ja) * | 1993-08-06 | 1995-02-21 | Hitachi Ltd | 半導体製造装置 |
| JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
| JP3379200B2 (ja) * | 1994-03-25 | 2003-02-17 | 株式会社ニコン | 位置検出装置 |
| US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
| US7365513B1 (en) | 1994-04-01 | 2008-04-29 | Nikon Corporation | Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device |
| US5874820A (en) | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
| US6989647B1 (en) | 1994-04-01 | 2006-01-24 | Nikon Corporation | Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device |
| JP3555230B2 (ja) | 1994-05-18 | 2004-08-18 | 株式会社ニコン | 投影露光装置 |
| JP3613288B2 (ja) | 1994-10-18 | 2005-01-26 | 株式会社ニコン | 露光装置用のクリーニング装置 |
| US5623853A (en) | 1994-10-19 | 1997-04-29 | Nikon Precision Inc. | Precision motion stage with single guide beam and follower stage |
| JP3647100B2 (ja) * | 1995-01-12 | 2005-05-11 | キヤノン株式会社 | 検査装置およびこれを用いた露光装置やデバイス生産方法 |
| JPH08195375A (ja) * | 1995-01-17 | 1996-07-30 | Sony Corp | 回転乾燥方法および回転乾燥装置 |
| US6008500A (en) | 1995-04-04 | 1999-12-28 | Nikon Corporation | Exposure apparatus having dynamically isolated reaction frame |
| JPH08316124A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
| JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
| US6297871B1 (en) * | 1995-09-12 | 2001-10-02 | Nikon Corporation | Exposure apparatus |
| US5798838A (en) | 1996-02-28 | 1998-08-25 | Nikon Corporation | Projection exposure apparatus having function of detecting intensity distribution of spatial image, and method of detecting the same |
| US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
| JPH10116760A (ja) | 1996-10-08 | 1998-05-06 | Nikon Corp | 露光装置及び基板保持装置 |
| US6033478A (en) * | 1996-11-05 | 2000-03-07 | Applied Materials, Inc. | Wafer support with improved temperature control |
| JP4029183B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
| JP4029182B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 露光方法 |
| CN1244021C (zh) | 1996-11-28 | 2006-03-01 | 株式会社尼康 | 光刻装置和曝光方法 |
| KR19980032589U (ko) | 1996-12-04 | 1998-09-05 | 최병숙 | 롤러컨베이어 장치 |
| US5815246A (en) | 1996-12-24 | 1998-09-29 | U.S. Philips Corporation | Two-dimensionally balanced positioning device, and lithographic device provided with such a positioning device |
| DE69735016T2 (de) | 1996-12-24 | 2006-08-17 | Asml Netherlands B.V. | Lithographisches Gerät mit zwei Objekthaltern |
| USRE40043E1 (en) | 1997-03-10 | 2008-02-05 | Asml Netherlands B.V. | Positioning device having two object holders |
| JPH10255319A (ja) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
| US6268904B1 (en) * | 1997-04-23 | 2001-07-31 | Nikon Corporation | Optical exposure apparatus and photo-cleaning method |
| JP3747566B2 (ja) * | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
| EP0874283B1 (en) | 1997-04-23 | 2003-09-03 | Nikon Corporation | Optical exposure apparatus and photo-cleaning method |
| JP3817836B2 (ja) * | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
| AU755913B2 (en) | 1997-06-18 | 2003-01-02 | Masad Damha | Nucleic acid biosensor diagnostics |
| JPH1116816A (ja) | 1997-06-25 | 1999-01-22 | Nikon Corp | 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法 |
| US5980647A (en) | 1997-07-15 | 1999-11-09 | International Business Machines Corporation | Metal removal cleaning process and apparatus |
| US6085764A (en) | 1997-07-22 | 2000-07-11 | Tdk Corporation | Cleaning apparatus and method |
| JP3445120B2 (ja) | 1997-09-30 | 2003-09-08 | キヤノン株式会社 | 露光装置及びデバイスの製造方法 |
| JP4210871B2 (ja) | 1997-10-31 | 2009-01-21 | 株式会社ニコン | 露光装置 |
| WO1999027568A1 (en) * | 1997-11-21 | 1999-06-03 | Nikon Corporation | Projection aligner and projection exposure method |
| JPH11162831A (ja) * | 1997-11-21 | 1999-06-18 | Nikon Corp | 投影露光装置及び投影露光方法 |
| JPH11283903A (ja) * | 1998-03-30 | 1999-10-15 | Nikon Corp | 投影光学系検査装置及び同装置を備えた投影露光装置 |
| JPH11166990A (ja) | 1997-12-04 | 1999-06-22 | Nikon Corp | ステージ装置及び露光装置並びに走査型露光装置 |
| JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
| US6208407B1 (en) | 1997-12-22 | 2001-03-27 | Asm Lithography B.V. | Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement |
| JPH11191525A (ja) | 1997-12-26 | 1999-07-13 | Nikon Corp | 投影露光装置 |
| JP4207240B2 (ja) | 1998-02-20 | 2009-01-14 | 株式会社ニコン | 露光装置用照度計、リソグラフィ・システム、照度計の較正方法およびマイクロデバイスの製造方法 |
| US5913981A (en) | 1998-03-05 | 1999-06-22 | Micron Technology, Inc. | Method of rinsing and drying semiconductor wafers in a chamber with a moveable side wall |
| US5958143A (en) | 1998-04-28 | 1999-09-28 | The Regents Of The University Of California | Cleaning process for EUV optical substrates |
| US6459472B1 (en) | 1998-05-15 | 2002-10-01 | Asml Netherlands B.V. | Lithographic device |
| JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
| JP2000091207A (ja) | 1998-09-14 | 2000-03-31 | Nikon Corp | 投影露光装置及び投影光学系の洗浄方法 |
| JP2000097616A (ja) | 1998-09-22 | 2000-04-07 | Nikon Corp | 干渉計 |
| JP2000311933A (ja) | 1999-04-27 | 2000-11-07 | Canon Inc | 基板保持装置、基板搬送システム、露光装置、塗布装置およびデバイス製造方法ならびに基板保持部クリーニング方法 |
| JP2000354835A (ja) | 1999-06-15 | 2000-12-26 | Toshiba Corp | 超音波洗浄処理方法及びその装置 |
| JP2001013677A (ja) | 1999-06-28 | 2001-01-19 | Shin Etsu Chem Co Ltd | ペリクル収納容器の洗浄方法 |
| US6459672B1 (en) | 1999-09-28 | 2002-10-01 | Sony Corporation | Optical head and optical disc device |
| WO2001035168A1 (en) | 1999-11-10 | 2001-05-17 | Massachusetts Institute Of Technology | Interference lithography utilizing phase-locked scanning beams |
| US6496259B2 (en) | 1999-12-28 | 2002-12-17 | Robert John Barish | Optical device providing relative alignment |
| US6995930B2 (en) | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
| US7187503B2 (en) | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
| US6421932B2 (en) * | 2000-02-14 | 2002-07-23 | Hitachi Electronics Engineering Co., Ltd. | Method and apparatus for drying substrate plates |
| JP2001318470A (ja) * | 2000-02-29 | 2001-11-16 | Nikon Corp | 露光装置、マイクロデバイス、フォトマスク、及び露光方法 |
| HU225403B1 (en) * | 2000-03-13 | 2006-11-28 | Andras Dr Boerzsoenyi | Method and apparatus for calibration of flowmeter of liquid flowing in canal |
| JP3996730B2 (ja) * | 2000-03-31 | 2007-10-24 | 株式会社日立製作所 | 半導体部品の製造方法 |
| US6466365B1 (en) | 2000-04-07 | 2002-10-15 | Corning Incorporated | Film coated optical lithography elements and method of making |
| JP3531914B2 (ja) * | 2000-04-14 | 2004-05-31 | キヤノン株式会社 | 光学装置、露光装置及びデバイス製造方法 |
| JP2001300453A (ja) * | 2000-04-20 | 2001-10-30 | Canon Inc | 物品表面の洗浄方法と洗浄装置、およびこれらによる光学素子の製造方法と装置、並びに光学系、露光方法、露光装置、デバイス製造方法 |
| JP2002014005A (ja) | 2000-04-25 | 2002-01-18 | Nikon Corp | 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置 |
| US20020041377A1 (en) | 2000-04-25 | 2002-04-11 | Nikon Corporation | Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method |
| DE10130999A1 (de) | 2000-06-29 | 2002-04-18 | D M S Co | Multifunktions-Reinigungsmodul einer Herstellungseinrichtung für Flachbildschirme und Reinigungsgerät mit Verwendung desselben |
| DE10032238A1 (de) | 2000-07-03 | 2002-01-17 | Siemens Ag | Telefon mit einem kapazitiven Umgebungssensor |
| US6446365B1 (en) | 2000-09-15 | 2002-09-10 | Vermeer Manufacturing Company | Nozzle mount for soft excavation |
| KR100798769B1 (ko) | 2000-09-25 | 2008-01-29 | 동경 엘렉트론 주식회사 | 기판 처리장치 |
| JP3840388B2 (ja) | 2000-09-25 | 2006-11-01 | 東京エレクトロン株式会社 | 基板処理装置 |
| KR100866818B1 (ko) | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
| US6710850B2 (en) | 2000-12-22 | 2004-03-23 | Nikon Corporation | Exposure apparatus and exposure method |
| KR20040007444A (ko) | 2001-02-06 | 2004-01-24 | 가부시키가이샤 니콘 | 노광장치 및 노광방법, 그리고 디바이스 제조방법 |
| US20020163629A1 (en) | 2001-05-07 | 2002-11-07 | Michael Switkes | Methods and apparatus employing an index matching medium |
| DE10123027B4 (de) | 2001-05-11 | 2005-07-21 | Evotec Oai Ag | Vorrichtung zur Untersuchung chemischer und/oder biologischer Proben |
| JP2002336804A (ja) | 2001-05-15 | 2002-11-26 | Nikon Corp | 光学部品の洗浄方法及び露光装置 |
| TW529172B (en) | 2001-07-24 | 2003-04-21 | Asml Netherlands Bv | Imaging apparatus |
| US20030023182A1 (en) * | 2001-07-26 | 2003-01-30 | Mault James R. | Respiratory connector for respiratory gas analysis |
| US7145671B2 (en) | 2001-08-16 | 2006-12-05 | Hewlett-Packard Development Company, L.P. | Image forming devices, methods of operating an image forming device, a method of providing consumable information, and a method of operating a printer |
| JP2003124089A (ja) * | 2001-10-09 | 2003-04-25 | Nikon Corp | 荷電粒子線露光装置及び露光方法 |
| US6801301B2 (en) | 2001-10-12 | 2004-10-05 | Canon Kabushiki Kaisha | Exposure apparatus |
| EP1313337A1 (de) * | 2001-11-15 | 2003-05-21 | Siemens Aktiengesellschaft | Verfahren zur Übertragung von Informationen in einem zellularen Funkkommunikationssystem mit Funksektoren |
| EP1329770A1 (en) * | 2002-01-18 | 2003-07-23 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1329773A3 (en) | 2002-01-18 | 2006-08-30 | ASML Netherlands B.V. | Lithographic apparatus, apparatus cleaning method, and device manufacturing method |
| US7154676B2 (en) | 2002-03-01 | 2006-12-26 | Carl Zeiss Smt A.G. | Very-high aperture projection objective |
| US7190527B2 (en) | 2002-03-01 | 2007-03-13 | Carl Zeiss Smt Ag | Refractive projection objective |
| DE10229249A1 (de) * | 2002-03-01 | 2003-09-04 | Zeiss Carl Semiconductor Mfg | Refraktives Projektionsobjektiv mit einer Taille |
| DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
| DE10229818A1 (de) | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
| US7092069B2 (en) | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
| US20030200996A1 (en) | 2002-04-30 | 2003-10-30 | Hiatt William Mark | Method and system for cleaning a wafer chuck |
| KR20040104691A (ko) | 2002-05-03 | 2004-12-10 | 칼 짜이스 에스엠테 아게 | 높은 개구를 갖는 투영 대물렌즈 |
| US6853794B2 (en) * | 2002-07-02 | 2005-02-08 | Lightel Technologies Inc. | Apparatus for cleaning optical fiber connectors and fiber optic parts |
| US20040021061A1 (en) * | 2002-07-30 | 2004-02-05 | Frederik Bijkerk | Photodiode, charged-coupled device and method for the production |
| JP2004071855A (ja) | 2002-08-07 | 2004-03-04 | Tokyo Electron Ltd | 基板処理装置及び基板処理方法 |
| US7362508B2 (en) | 2002-08-23 | 2008-04-22 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
| JP3922637B2 (ja) | 2002-08-30 | 2007-05-30 | 本田技研工業株式会社 | サイドエアバッグシステム |
| US7093375B2 (en) | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
| US6988326B2 (en) | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
| US6954993B1 (en) | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
| US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
| US6788477B2 (en) | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
| DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
| CN100568101C (zh) | 2002-11-12 | 2009-12-09 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
| SG121818A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| CN101470360B (zh) | 2002-11-12 | 2013-07-24 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
| EP1420300B1 (en) * | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| EP1429188B1 (en) | 2002-11-12 | 2013-06-19 | ASML Netherlands B.V. | Lithographic projection apparatus |
| EP2495613B1 (en) | 2002-11-12 | 2013-07-31 | ASML Netherlands B.V. | Lithographic apparatus |
| EP1420299B1 (en) * | 2002-11-12 | 2011-01-05 | ASML Netherlands B.V. | Immersion lithographic apparatus and device manufacturing method |
| SG131766A1 (en) | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| DE10253679A1 (de) | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
| JP3884371B2 (ja) | 2002-11-26 | 2007-02-21 | 株式会社東芝 | レチクル、露光モニタ方法、露光方法、及び半導体装置の製造方法 |
| TW200412617A (en) | 2002-12-03 | 2004-07-16 | Nikon Corp | Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method |
| DE10258718A1 (de) | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
| JP4525062B2 (ja) | 2002-12-10 | 2010-08-18 | 株式会社ニコン | 露光装置及びデバイス製造方法、露光システム |
| US6992750B2 (en) | 2002-12-10 | 2006-01-31 | Canon Kabushiki Kaisha | Exposure apparatus and method |
| SG157962A1 (en) | 2002-12-10 | 2010-01-29 | Nikon Corp | Exposure apparatus and method for producing device |
| KR20130010039A (ko) | 2002-12-10 | 2013-01-24 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| EP1571694A4 (en) * | 2002-12-10 | 2008-10-15 | Nikon Corp | EXPOSURE APPARATUS AND METHOD FOR MANUFACTURING THE DEVICE |
| JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| US7242455B2 (en) | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
| US7358507B2 (en) | 2002-12-13 | 2008-04-15 | Koninklijke Philips Electronics N.V. | Liquid removal in a method and device for irradiating spots on a layer |
| WO2004057590A1 (en) | 2002-12-19 | 2004-07-08 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
| AU2003295177A1 (en) | 2002-12-19 | 2004-07-14 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
| US7010958B2 (en) | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
| US6781670B2 (en) | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
| US7156869B1 (en) * | 2003-01-27 | 2007-01-02 | Advanced Cardiovascular Systems, Inc. | Drug-eluting stent and delivery system with tapered stent in shoulder region |
| JP2004007417A (ja) | 2003-02-10 | 2004-01-08 | Fujitsu Ltd | 情報提供システム |
| US7090964B2 (en) | 2003-02-21 | 2006-08-15 | Asml Holding N.V. | Lithographic printing with polarized light |
| US7206059B2 (en) | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
| US6943941B2 (en) | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
| US6853795B2 (en) * | 2003-03-05 | 2005-02-08 | Corning Cable Systems Llc | High density fiber optic distribution frame |
| US7029832B2 (en) | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
| US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
| KR101177331B1 (ko) | 2003-04-09 | 2012-08-30 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
| JP4775256B2 (ja) | 2003-04-10 | 2011-09-21 | 株式会社ニコン | 液浸リソグラフィ装置用の減圧排出を含む環境システム |
| WO2004093160A2 (en) * | 2003-04-10 | 2004-10-28 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
| KR101497289B1 (ko) | 2003-04-10 | 2015-02-27 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
| JP4656057B2 (ja) | 2003-04-10 | 2011-03-23 | 株式会社ニコン | 液浸リソグラフィ装置用電気浸透素子 |
| WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
| SG139734A1 (en) | 2003-04-11 | 2008-02-29 | Nikon Corp | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
| EP2161621B1 (en) * | 2003-04-11 | 2018-10-24 | Nikon Corporation | Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus |
| CN1774667A (zh) | 2003-04-17 | 2006-05-17 | 株式会社尼康 | 用在浸没式平版印刷方法中自动聚焦部件的光学配置 |
| JP4146755B2 (ja) | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
| JP4025683B2 (ja) | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
| TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| EP1624481A4 (en) * | 2003-05-15 | 2008-01-30 | Nikon Corp | EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS |
| TWI614794B (zh) | 2003-05-23 | 2018-02-11 | Nikon Corp | 曝光方法及曝光裝置以及元件製造方法 |
| TWI616932B (zh) | 2003-05-23 | 2018-03-01 | Nikon Corp | Exposure device and component manufacturing method |
| JP2005277363A (ja) * | 2003-05-23 | 2005-10-06 | Nikon Corp | 露光装置及びデバイス製造方法 |
| JP5058550B2 (ja) * | 2003-05-23 | 2012-10-24 | 株式会社ニコン | 露光装置、露光方法、デバイス製造方法、及び液体回収方法 |
| CN1307456C (zh) | 2003-05-23 | 2007-03-28 | 佳能株式会社 | 投影光学系统、曝光装置及器件的制造方法 |
| KR20150036794A (ko) | 2003-05-28 | 2015-04-07 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치, 및 디바이스 제조 방법 |
| JP2004356356A (ja) | 2003-05-29 | 2004-12-16 | Oki Electric Ind Co Ltd | 洗浄終了判定方法および洗浄装置 |
| US7356332B2 (en) * | 2003-06-09 | 2008-04-08 | Microsoft Corporation | Mobile information system for presenting information to mobile devices |
| EP2261741A3 (en) | 2003-06-11 | 2011-05-25 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7317504B2 (en) * | 2004-04-08 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4054285B2 (ja) | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
| JP4084710B2 (ja) | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
| US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
| JP4084712B2 (ja) | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
| JP4029064B2 (ja) | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
| US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
| EP1639391A4 (en) | 2003-07-01 | 2009-04-29 | Nikon Corp | USE OF FLUIDS SPECIFIED ISOTOPICALLY AS OPTICAL ELEMENTS |
| EP1646074A4 (en) | 2003-07-09 | 2007-10-03 | Nikon Corp | EXPOSURE DEVICE AND METHOD OF MANUFACTURE |
| US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
| US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
| WO2005010962A1 (ja) | 2003-07-28 | 2005-02-03 | Nikon Corporation | 露光装置及びデバイス製造方法、並びに露光装置の制御方法 |
| US7175968B2 (en) | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
| US7326522B2 (en) | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
| US7370659B2 (en) * | 2003-08-06 | 2008-05-13 | Micron Technology, Inc. | Photolithographic stepper and/or scanner machines including cleaning devices and methods of cleaning photolithographic stepper and/or scanner machines |
| US7700267B2 (en) | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
| US7061578B2 (en) | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
| US7579135B2 (en) | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
| US7085075B2 (en) | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
| US6844206B1 (en) * | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
| JP2005072404A (ja) | 2003-08-27 | 2005-03-17 | Sony Corp | 露光装置および半導体装置の製造方法 |
| TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US6954256B2 (en) | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
| US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
| EP1670039B1 (en) | 2003-08-29 | 2014-06-04 | Nikon Corporation | Exposure apparatus and device producing method |
| WO2005022615A1 (ja) | 2003-08-29 | 2005-03-10 | Nikon Corporation | 液体回収装置、露光装置、露光方法及びデバイス製造方法 |
| JP4305095B2 (ja) | 2003-08-29 | 2009-07-29 | 株式会社ニコン | 光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法 |
| US7014966B2 (en) | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
| KR101523180B1 (ko) | 2003-09-03 | 2015-05-26 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
| KR101248325B1 (ko) | 2003-09-26 | 2013-03-27 | 가부시키가이샤 니콘 | 투영노광장치 및 투영노광장치의 세정방법, 메인터넌스방법 그리고 디바이스의 제조방법 |
| US6961186B2 (en) | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
| US7369217B2 (en) | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
| JP2005136374A (ja) | 2003-10-06 | 2005-05-26 | Matsushita Electric Ind Co Ltd | 半導体製造装置及びそれを用いたパターン形成方法 |
| TW200514138A (en) * | 2003-10-09 | 2005-04-16 | Nippon Kogaku Kk | Exposure equipment and exposure method, manufacture method of component |
| EP1524588A1 (en) | 2003-10-15 | 2005-04-20 | Sony Ericsson Mobile Communications AB | User input device for a portable electronic device |
| EP1524558A1 (en) | 2003-10-15 | 2005-04-20 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20050084797A1 (en) * | 2003-10-16 | 2005-04-21 | Agfa-Gevaert | Heat-sensitive lithographic printing plate precursor |
| US7678527B2 (en) | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
| WO2005050324A2 (en) | 2003-11-05 | 2005-06-02 | Dsm Ip Assets B.V. | A method and apparatus for producing microchips |
| US7924397B2 (en) | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
| EP1695148B1 (en) | 2003-11-24 | 2015-10-28 | Carl Zeiss SMT GmbH | Immersion objective |
| US7545481B2 (en) | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7125652B2 (en) | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
| JP2007516613A (ja) | 2003-12-15 | 2007-06-21 | カール・ツアイス・エスエムテイ・アーゲー | 少なくとも1つの液体レンズを備えるマイクロリソグラフィー投影対物レンズとしての対物レンズ |
| KR101200654B1 (ko) | 2003-12-15 | 2012-11-12 | 칼 짜이스 에스엠티 게엠베하 | 고 개구율 및 평평한 단부면을 가진 투사 대물렌즈 |
| WO2005106589A1 (en) | 2004-05-04 | 2005-11-10 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus and immersion liquid therefore |
| JP4720506B2 (ja) | 2003-12-15 | 2011-07-13 | 株式会社ニコン | ステージ装置、露光装置、及び露光方法 |
| JP4323946B2 (ja) | 2003-12-19 | 2009-09-02 | キヤノン株式会社 | 露光装置 |
| US20050185269A1 (en) | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
| JP5102492B2 (ja) | 2003-12-19 | 2012-12-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結晶素子を有するマイクロリソグラフィー投影用対物レンズ |
| US7460206B2 (en) | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
| US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7589818B2 (en) | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
| US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20050147920A1 (en) | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
| US7145641B2 (en) | 2003-12-31 | 2006-12-05 | Asml Netherlands, B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
| US7088422B2 (en) | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
| KR20180117228A (ko) | 2004-01-05 | 2018-10-26 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| JP4371822B2 (ja) | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
| JP4429023B2 (ja) | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| US20050153424A1 (en) | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
| JP5420821B2 (ja) | 2004-01-14 | 2014-02-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 反射屈折投影対物レンズ |
| KR101099847B1 (ko) | 2004-01-16 | 2011-12-27 | 칼 짜이스 에스엠티 게엠베하 | 편광변조 광학소자 |
| WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
| WO2005071491A2 (en) | 2004-01-20 | 2005-08-04 | Carl Zeiss Smt Ag | Exposure apparatus and measuring device for a projection lens |
| US7026259B2 (en) | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
| US7391501B2 (en) | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
| US7990516B2 (en) * | 2004-02-03 | 2011-08-02 | Nikon Corporation | Immersion exposure apparatus and device manufacturing method with liquid detection apparatus |
| JP2007520893A (ja) | 2004-02-03 | 2007-07-26 | ロチェスター インスティテュート オブ テクノロジー | 流体を使用したフォトリソグラフィ法及びそのシステム |
| US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1716454A1 (en) | 2004-02-09 | 2006-11-02 | Carl Zeiss SMT AG | Projection objective for a microlithographic projection exposure apparatus |
| EP1724815B1 (en) | 2004-02-10 | 2012-06-13 | Nikon Corporation | Aligner, device manufacturing method, maintenance method and aligning method |
| US20070165198A1 (en) | 2004-02-13 | 2007-07-19 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
| WO2005081030A1 (en) | 2004-02-18 | 2005-09-01 | Corning Incorporated | Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light |
| DE102004007946A1 (de) | 2004-02-18 | 2005-09-15 | Tyco Electronics Raychem Gmbh | Gassensoranordnung in integrierter Bauweise |
| KR101106497B1 (ko) | 2004-02-20 | 2012-01-20 | 가부시키가이샤 니콘 | 노광 장치, 공급 방법 및 회수 방법, 노광 방법, 및디바이스 제조 방법 |
| US20050205108A1 (en) | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
| US7027125B2 (en) | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
| US7084960B2 (en) | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
| US7227619B2 (en) | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7034917B2 (en) | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
| US7295283B2 (en) | 2004-04-02 | 2007-11-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7712905B2 (en) | 2004-04-08 | 2010-05-11 | Carl Zeiss Smt Ag | Imaging system with mirror group |
| US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7271878B2 (en) | 2004-04-22 | 2007-09-18 | International Business Machines Corporation | Wafer cell for immersion lithography |
| US7244665B2 (en) | 2004-04-29 | 2007-07-17 | Micron Technology, Inc. | Wafer edge ring structures and methods of formation |
| US7379159B2 (en) | 2004-05-03 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8054448B2 (en) | 2004-05-04 | 2011-11-08 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
| US7091502B2 (en) | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
| KR101213831B1 (ko) | 2004-05-17 | 2012-12-24 | 칼 짜이스 에스엠티 게엠베하 | 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈 |
| US7616383B2 (en) * | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7486381B2 (en) | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2005119368A2 (en) | 2004-06-04 | 2005-12-15 | Carl Zeiss Smt Ag | System for measuring the image quality of an optical imaging system |
| EP2966670B1 (en) | 2004-06-09 | 2017-02-22 | Nikon Corporation | Exposure apparatus and device manufacturing method |
| US7463330B2 (en) * | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7224427B2 (en) * | 2004-08-03 | 2007-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Megasonic immersion lithography exposure apparatus and method |
| US7304715B2 (en) | 2004-08-13 | 2007-12-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7446850B2 (en) * | 2004-12-03 | 2008-11-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7804576B2 (en) * | 2004-12-06 | 2010-09-28 | Nikon Corporation | Maintenance method, maintenance device, exposure apparatus, and device manufacturing method |
| US7248334B2 (en) * | 2004-12-07 | 2007-07-24 | Asml Netherlands B.V. | Sensor shield |
| JP4752473B2 (ja) | 2004-12-09 | 2011-08-17 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
| US7880860B2 (en) * | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7450217B2 (en) | 2005-01-12 | 2008-11-11 | Asml Netherlands B.V. | Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby |
| US7262422B2 (en) | 2005-07-01 | 2007-08-28 | Spansion Llc | Use of supercritical fluid to dry wafer and clean lens in immersion lithography |
| US8125610B2 (en) * | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
| JP5100182B2 (ja) | 2007-03-30 | 2012-12-19 | キヤノン株式会社 | データ転送装置及びデータ受信装置並びにデータ転送システム |
| US9019466B2 (en) * | 2007-07-24 | 2015-04-28 | Asml Netherlands B.V. | Lithographic apparatus, reflective member and a method of irradiating the underside of a liquid supply system |
| JP5440937B2 (ja) * | 2010-02-01 | 2014-03-12 | 日本電気株式会社 | スレッド数制限装置、スレッド数制限方法およびスレッド数制限プログラム |
-
2004
- 2004-05-21 TW TW105115519A patent/TWI616932B/zh not_active IP Right Cessation
- 2004-05-21 TW TW093114406A patent/TW200509205A/zh not_active IP Right Cessation
- 2004-05-21 TW TW098124949A patent/TWI424470B/zh not_active IP Right Cessation
- 2004-05-21 TW TW100116612A patent/TWI474380B/zh not_active IP Right Cessation
- 2004-05-21 TW TW106135828A patent/TW201806001A/zh unknown
- 2004-05-21 TW TW100136676A patent/TWI503865B/zh not_active IP Right Cessation
- 2004-05-21 TW TW103145927A patent/TWI612556B/zh not_active IP Right Cessation
- 2004-05-21 TW TW101102376A patent/TWI518742B/zh not_active IP Right Cessation
- 2004-05-24 KR KR1020117026166A patent/KR101508811B1/ko not_active Expired - Fee Related
- 2004-05-24 EP EP12155098A patent/EP2466618A3/en not_active Withdrawn
- 2004-05-24 KR KR1020177032045A patent/KR20170126020A/ko not_active Ceased
- 2004-05-24 EP EP12155099A patent/EP2466619A3/en not_active Withdrawn
- 2004-05-24 EP EP15199243.5A patent/EP3032572A1/en not_active Withdrawn
- 2004-05-24 WO PCT/JP2004/007417 patent/WO2004105107A1/ja not_active Ceased
- 2004-05-24 EP EP12155096A patent/EP2466616A3/en not_active Withdrawn
- 2004-05-24 EP EP12155097A patent/EP2466617A3/en not_active Withdrawn
- 2004-05-24 KR KR1020117023021A patent/KR101536033B1/ko not_active Expired - Fee Related
- 2004-05-24 EP EP12155114A patent/EP2535769A3/en not_active Withdrawn
- 2004-05-24 KR KR1020057022146A patent/KR20060009950A/ko not_active Ceased
- 2004-05-24 KR KR1020127025283A patent/KR101523828B1/ko not_active Expired - Fee Related
- 2004-05-24 KR KR1020127025284A patent/KR101523829B1/ko not_active Expired - Fee Related
- 2004-05-24 KR KR1020117019047A patent/KR101327697B1/ko not_active Expired - Fee Related
- 2004-05-24 EP EP04734624A patent/EP1628329A4/en not_active Withdrawn
- 2004-05-24 EP EP12155100A patent/EP2466620A3/en not_active Withdrawn
- 2004-05-24 EP EP12155095A patent/EP2466615A3/en not_active Withdrawn
- 2004-05-24 KR KR1020147036412A patent/KR101677829B1/ko not_active Expired - Fee Related
- 2004-05-24 KR KR1020117031175A patent/KR101345540B1/ko not_active Expired - Fee Related
- 2004-05-24 KR KR1020157026199A patent/KR101796849B1/ko not_active Expired - Fee Related
- 2004-05-24 EP EP12155093.3A patent/EP2498131B1/en not_active Expired - Lifetime
-
2005
- 2005-11-22 US US11/284,187 patent/US7388649B2/en not_active Expired - Fee Related
-
2006
- 2006-08-16 HK HK16109045.8A patent/HK1221072A1/en unknown
- 2006-11-22 US US11/603,078 patent/US8125612B2/en not_active Expired - Fee Related
-
2007
- 2007-02-09 US US11/704,340 patent/US8134682B2/en not_active Expired - Fee Related
- 2007-06-07 US US11/808,231 patent/US8072576B2/en not_active Expired - Fee Related
- 2007-06-07 US US11/808,230 patent/US8384877B2/en not_active Expired - Fee Related
- 2007-06-22 US US11/767,425 patent/US8174668B2/en not_active Expired - Fee Related
-
2008
- 2008-05-15 US US12/153,234 patent/US20080231825A1/en not_active Abandoned
- 2008-05-16 US US12/153,357 patent/US8130363B2/en not_active Expired - Fee Related
- 2008-05-16 US US12/153,354 patent/US8169592B2/en not_active Expired - Fee Related
-
2010
- 2010-02-09 JP JP2010026918A patent/JP5440228B2/ja not_active Expired - Fee Related
-
2011
- 2011-04-13 JP JP2011089260A patent/JP5440542B2/ja not_active Expired - Fee Related
- 2011-04-13 JP JP2011089261A patent/JP5252025B2/ja not_active Expired - Fee Related
- 2011-04-13 JP JP2011089259A patent/JP5440541B2/ja not_active Expired - Fee Related
- 2011-04-13 JP JP2011089258A patent/JP2011139105A/ja active Pending
- 2011-04-21 US US13/064,867 patent/US8780327B2/en not_active Expired - Fee Related
-
2012
- 2012-03-30 JP JP2012082522A patent/JP5699976B2/ja not_active Expired - Fee Related
- 2012-09-18 JP JP2012205079A patent/JP5590083B2/ja not_active Expired - Fee Related
- 2012-09-18 JP JP2012205080A patent/JP5700011B2/ja not_active Expired - Fee Related
-
2013
- 2013-02-25 US US13/775,853 patent/US8760617B2/en not_active Expired - Fee Related
- 2013-12-26 JP JP2013269607A patent/JP5794291B2/ja not_active Expired - Fee Related
-
2014
- 2014-05-21 US US14/283,865 patent/US9304392B2/en not_active Expired - Lifetime
- 2014-11-10 JP JP2014228266A patent/JP5907238B2/ja not_active Expired - Lifetime
-
2015
- 2015-09-11 JP JP2015179702A patent/JP6278015B2/ja not_active Expired - Lifetime
-
2016
- 2016-02-29 US US15/056,295 patent/US9939739B2/en not_active Expired - Fee Related
- 2016-12-27 JP JP2016252527A patent/JP6350643B2/ja not_active Expired - Fee Related
-
2018
- 2018-01-09 JP JP2018001074A patent/JP2018077518A/ja active Pending
- 2018-03-09 US US15/916,937 patent/US20180196352A1/en not_active Abandoned
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999049504A1 (fr) * | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
| TW200300269A (en) * | 2001-11-02 | 2003-05-16 | Toshiba Kk | Exposure method and apparatus |
Also Published As
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI616932B (zh) | Exposure device and component manufacturing method | |
| JP2005277363A (ja) | 露光装置及びデバイス製造方法 | |
| JP5058550B2 (ja) | 露光装置、露光方法、デバイス製造方法、及び液体回収方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |