TWI492316B - 半導體裝置製造方法 - Google Patents

半導體裝置製造方法 Download PDF

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Publication number
TWI492316B
TWI492316B TW101126953A TW101126953A TWI492316B TW I492316 B TWI492316 B TW I492316B TW 101126953 A TW101126953 A TW 101126953A TW 101126953 A TW101126953 A TW 101126953A TW I492316 B TWI492316 B TW I492316B
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Taiwan
Prior art keywords
layer
oxide semiconductor
atmosphere
insulating layer
oxygen
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TW101126953A
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English (en)
Chinese (zh)
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TW201250862A (en
Inventor
Miyuki Hosoba
Junichiro Sakata
Hiroki Ohara
Shunpei Yamazaki
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Semiconductor Energy Lab
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Publication of TW201250862A publication Critical patent/TW201250862A/zh
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
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    • H10D30/67—Thin-film transistors [TFT]
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    • H10D30/67—Thin-film transistors [TFT]
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    • H10D86/01—Manufacture or treatment
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    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
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    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133302—Rigid substrates, e.g. inorganic substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G02F1/133531—Polarisers characterised by the arrangement of polariser or analyser axes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134336—Matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0286—Details of a shift registers arranged for use in a driving circuit
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/08—Details of timing specific for flat panels, other than clock recovery
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
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    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3674—Details of drivers for scan electrodes
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    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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  • Thin Film Transistor (AREA)
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Families Citing this family (112)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10434804B2 (en) 2008-06-13 2019-10-08 Kateeva, Inc. Low particle gas enclosure systems and methods
US12018857B2 (en) 2008-06-13 2024-06-25 Kateeva, Inc. Gas enclosure assembly and system
US11975546B2 (en) 2008-06-13 2024-05-07 Kateeva, Inc. Gas enclosure assembly and system
US12064979B2 (en) 2008-06-13 2024-08-20 Kateeva, Inc. Low-particle gas enclosure systems and methods
WO2011002046A1 (en) 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN104576748B (zh) 2009-06-30 2019-03-15 株式会社半导体能源研究所 半导体装置的制造方法
WO2011004723A1 (en) 2009-07-10 2011-01-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method the same
KR101847656B1 (ko) * 2009-10-21 2018-05-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2011062043A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
EP2507823B1 (en) 2009-12-04 2018-09-26 Semiconductor Energy Laboratory Co. Ltd. Manufacturing method for semiconductor device
WO2011068033A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011070892A1 (en) 2009-12-08 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20130008037A (ko) * 2010-03-05 2013-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하는 방법
CN104465408B (zh) * 2010-04-23 2017-09-15 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
CN102906882B (zh) * 2010-05-21 2015-11-25 株式会社半导体能源研究所 半导体装置及其制造方法
WO2011145634A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8906756B2 (en) 2010-05-21 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8642380B2 (en) 2010-07-02 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2012029596A1 (en) * 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101895325B1 (ko) 2010-12-17 2018-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 재료 및 반도체 장치
JP6023453B2 (ja) * 2011-04-15 2016-11-09 株式会社半導体エネルギー研究所 記憶装置
KR20140003315A (ko) * 2011-06-08 2014-01-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟, 스퍼터링 타겟의 제조 방법 및 박막의 형성 방법
US8643008B2 (en) * 2011-07-22 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6116149B2 (ja) * 2011-08-24 2017-04-19 株式会社半導体エネルギー研究所 半導体装置
JP5832399B2 (ja) * 2011-09-16 2015-12-16 株式会社半導体エネルギー研究所 発光装置
JP2013084333A (ja) 2011-09-28 2013-05-09 Semiconductor Energy Lab Co Ltd シフトレジスタ回路
JP2013087962A (ja) * 2011-10-13 2013-05-13 Panasonic Corp 加熱調理装置
KR20130043063A (ko) 2011-10-19 2013-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR101935464B1 (ko) * 2011-10-26 2019-01-07 삼성디스플레이 주식회사 색필터 및 색필터 표시판
JP6059968B2 (ja) * 2011-11-25 2017-01-11 株式会社半導体エネルギー研究所 半導体装置、及び液晶表示装置
JP6259575B2 (ja) * 2012-02-23 2018-01-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6257900B2 (ja) * 2012-02-23 2018-01-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101477469B1 (ko) * 2012-03-30 2014-12-29 호야 가부시키가이샤 마스크 블랭크용 기판, 다층 반사막 부착 기판, 투과형 마스크 블랭크, 반사형 마스크 블랭크, 투과형 마스크, 반사형 마스크 및 반도체 장치의 제조 방법
US9099578B2 (en) 2012-06-04 2015-08-04 Nusola, Inc. Structure for creating ohmic contact in semiconductor devices and methods for manufacture
US8999773B2 (en) * 2012-04-05 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Processing method of stacked-layer film and manufacturing method of semiconductor device
JP6035195B2 (ja) 2012-05-01 2016-11-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102173074B1 (ko) * 2012-05-10 2020-11-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102295737B1 (ko) * 2012-05-10 2021-09-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 디바이스
US9379250B2 (en) * 2012-06-22 2016-06-28 Sharp Kabushiki Kaisha Semiconductor device and method for producing same
JP2014041344A (ja) * 2012-07-27 2014-03-06 Semiconductor Energy Lab Co Ltd 液晶表示装置の駆動方法
KR20140026257A (ko) * 2012-08-23 2014-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR102400509B1 (ko) 2012-09-13 2022-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
TWI782259B (zh) * 2012-10-24 2022-11-01 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP6317059B2 (ja) * 2012-11-16 2018-04-25 株式会社半導体エネルギー研究所 半導体装置及び表示装置
JP6121149B2 (ja) * 2012-11-28 2017-04-26 富士フイルム株式会社 酸化物半導体素子、酸化物半導体素子の製造方法、表示装置及びイメージセンサ
CN103177970A (zh) * 2013-02-26 2013-06-26 上海大学 一种氧化物薄膜晶体管制备方法
TWI493370B (zh) * 2013-03-05 2015-07-21 Univ Nat Chiao Tung 工程變更之保持時間修復方法
JP2014175503A (ja) 2013-03-08 2014-09-22 Kobe Steel Ltd 薄膜トランジスタの半導体層用酸化物、薄膜トランジスタおよび表示装置
WO2014145294A2 (en) * 2013-03-15 2014-09-18 Nusola Inc. Manufacturing equipment for photovoltaic devices and methods
TWI639235B (zh) * 2013-05-16 2018-10-21 半導體能源研究所股份有限公司 半導體裝置
US9035301B2 (en) 2013-06-19 2015-05-19 Semiconductor Energy Laboratory Co., Ltd. Imaging device
JP6326270B2 (ja) * 2013-06-28 2018-05-16 株式会社神戸製鋼所 薄膜トランジスタおよびその製造方法
CN104282567B (zh) * 2013-07-05 2017-05-03 上海和辉光电有限公司 制造igzo层和tft的方法
JP5454727B1 (ja) * 2013-07-10 2014-03-26 日新電機株式会社 薄膜トランジスタの作製方法
JP6410496B2 (ja) * 2013-07-31 2018-10-24 株式会社半導体エネルギー研究所 マルチゲート構造のトランジスタ
TWI635750B (zh) 2013-08-02 2018-09-11 半導體能源研究所股份有限公司 攝像裝置以及其工作方法
JP6345544B2 (ja) * 2013-09-05 2018-06-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6433757B2 (ja) * 2013-10-31 2018-12-05 株式会社半導体エネルギー研究所 半導体装置、表示装置、電子機器
WO2015098906A1 (ja) * 2013-12-24 2015-07-02 富士フイルム株式会社 光学シート部材及び表示装置
US10468279B2 (en) 2013-12-26 2019-11-05 Kateeva, Inc. Apparatus and techniques for thermal treatment of electronic devices
WO2015112454A1 (en) 2014-01-21 2015-07-30 Kateeva, Inc. Apparatus and techniques for electronic device encapsulation
WO2015168036A1 (en) 2014-04-30 2015-11-05 Kateeva, Inc. Gas cushion apparatus and techniques for substrate coating
US9722090B2 (en) * 2014-06-23 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including first gate oxide semiconductor film, and second gate
KR102295874B1 (ko) * 2014-07-24 2021-08-31 엘지디스플레이 주식회사 디스플레이 장치
CN106573831B (zh) * 2014-08-12 2020-04-21 康宁股份有限公司 用于减少显示器玻璃静电放电的有机表面处理
CN104319279B (zh) * 2014-11-10 2017-11-14 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
JP2016119465A (ja) * 2014-12-18 2016-06-30 株式会社半導体エネルギー研究所 結晶性半導体膜の作成方法、および半導体装置
KR20170101233A (ko) * 2014-12-26 2017-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링용 타깃의 제작 방법
JP6539464B2 (ja) * 2015-03-19 2019-07-03 国立大学法人東北大学 半導体素子の製造方法
KR102391347B1 (ko) * 2015-04-09 2022-04-28 삼성디스플레이 주식회사 박막트랜지스터 어레이 기판 및 이를 구비한 디스플레이 장치
CN104992951A (zh) * 2015-06-19 2015-10-21 深圳市华星光电技术有限公司 一种阵列基板及其制成方法、显示面板
CN105097668A (zh) * 2015-06-30 2015-11-25 京东方科技集团股份有限公司 一种显示基板及其制备方法、显示装置
US10115828B2 (en) 2015-07-30 2018-10-30 Ricoh Company, Ltd. Field-effect transistor, display element, image display device, and system
KR102473677B1 (ko) * 2015-08-17 2022-12-02 삼성디스플레이 주식회사 액정 표시 장치
US10388608B2 (en) * 2015-08-28 2019-08-20 Hitachi Chemical Company, Ltd. Semiconductor device and method for manufacturing same
CN105137660A (zh) * 2015-09-25 2015-12-09 京东方科技集团股份有限公司 一种光配向膜杂质去除装置和方法
CN105204216A (zh) * 2015-10-29 2015-12-30 深圳市华星光电技术有限公司 Pdlc显示面板及其制作方法与液晶显示装置
EP3377234A4 (en) 2015-11-16 2019-08-07 Kateeva, Inc. SYSTEMS AND METHOD FOR THE THERMAL PROCESSING OF A SUBSTRATE
JP6640759B2 (ja) * 2017-01-11 2020-02-05 株式会社アルバック 真空処理装置
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
CN106646982B (zh) * 2017-03-21 2019-09-17 京东方科技集团股份有限公司 显示面板及其制造方法和显示装置
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US10847360B2 (en) 2017-05-25 2020-11-24 Applied Materials, Inc. High pressure treatment of silicon nitride film
CN110678973B (zh) 2017-06-02 2023-09-19 应用材料公司 碳化硼硬掩模的干式剥除
KR102405723B1 (ko) 2017-08-18 2022-06-07 어플라이드 머티어리얼스, 인코포레이티드 고압 및 고온 어닐링 챔버
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
US10714400B2 (en) * 2017-08-30 2020-07-14 Micron Technology, Inc. Methods of forming semiconductor structures comprising thin film transistors including oxide semiconductors
US11177128B2 (en) 2017-09-12 2021-11-16 Applied Materials, Inc. Apparatus and methods for manufacturing semiconductor structures using protective barrier layer
US10643867B2 (en) 2017-11-03 2020-05-05 Applied Materials, Inc. Annealing system and method
CN117936417A (zh) 2017-11-11 2024-04-26 微材料有限责任公司 用于高压处理腔室的气体输送系统
US10854483B2 (en) 2017-11-16 2020-12-01 Applied Materials, Inc. High pressure steam anneal processing apparatus
KR20200075892A (ko) 2017-11-17 2020-06-26 어플라이드 머티어리얼스, 인코포레이티드 고압 처리 시스템을 위한 컨덴서 시스템
CN111699549B (zh) 2018-01-24 2025-03-28 应用材料公司 使用高压退火的接缝弥合
JP7239598B2 (ja) 2018-03-09 2023-03-14 アプライド マテリアルズ インコーポレイテッド 金属含有材料の高圧アニーリングプロセス
US10714331B2 (en) 2018-04-04 2020-07-14 Applied Materials, Inc. Method to fabricate thermally stable low K-FinFET spacer
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10566188B2 (en) 2018-05-17 2020-02-18 Applied Materials, Inc. Method to improve film stability
US10704141B2 (en) 2018-06-01 2020-07-07 Applied Materials, Inc. In-situ CVD and ALD coating of chamber to control metal contamination
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
CN111101142B (zh) * 2018-10-26 2021-05-18 中国科学院金属研究所 一种图形化集成式高效光催化分解水系统的构筑方法
JP7153533B2 (ja) * 2018-10-30 2022-10-14 株式会社ジャパンディスプレイ 表示装置
JP7179172B6 (ja) 2018-10-30 2022-12-16 アプライド マテリアルズ インコーポレイテッド 半導体用途の構造体をエッチングするための方法
KR20210077779A (ko) 2018-11-16 2021-06-25 어플라이드 머티어리얼스, 인코포레이티드 강화된 확산 프로세스를 사용한 막 증착
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
JP7213787B2 (ja) * 2018-12-18 2023-01-27 芝浦メカトロニクス株式会社 成膜装置
TW202038326A (zh) 2019-01-11 2020-10-16 日商索尼半導體解決方案公司 氧化物半導體膜之蝕刻方法
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
JP7722388B2 (ja) 2020-11-25 2025-08-13 Ａｇｃ株式会社 車両及びフェンダーライナーの製造方法
US20230031333A1 (en) * 2021-07-30 2023-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. Device level thermal dissipation
CN114035711B (zh) * 2021-10-22 2023-08-08 上海交通大学 外触发触控传感阵列及其制备方法
US20240118329A1 (en) * 2022-10-05 2024-04-11 Taiwan Semiconductor Manufacturing Company Limited Electrostatic field strength measurement

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070085075A1 (en) * 2003-04-02 2007-04-19 Semiconductor Energy Laboratory Co., Ltd. Light Emitting Device, Electronic Equipment and Apparatus For Manufacturing the Same
TW200845397A (en) * 2007-02-28 2008-11-16 Canon Kk Thin-film transistor and method of manufacturing same
EP2006903A2 (en) * 2007-06-19 2008-12-24 Samsung SDI Co., Ltd. Method of fabricating polycrystalline silicon, TFT fabricated using the same, method of fabricating the TFT, and organic light emitting diode display device including the TFT
TW200936792A (en) * 2007-12-27 2009-09-01 Nippon Mining Co Process for producing thin film of a-igzo oxide
TW200937638A (en) * 2007-12-13 2009-09-01 Idemitsu Kosan Co Field effect transistor using oxide semiconductor and method for manufacturing the same

Family Cites Families (197)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0669919B2 (ja) 1989-03-28 1994-09-07 住友セメント株式会社 超伝導セラミックス薄膜の製法
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
JP3605932B2 (ja) 1995-03-31 2004-12-22 セイコーエプソン株式会社 Ｍｉｍ型非線形素子の製造方法
EP0820644B1 (en) 1995-08-03 2005-08-24 Koninklijke Philips Electronics N.V. Semiconductor device provided with transparent switching element
JP3625598B2 (ja) * 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
JPH09283464A (ja) * 1996-04-09 1997-10-31 Mitsubishi Electric Corp 半導体装置の製造方法
JP3372028B2 (ja) * 1998-06-15 2003-01-27 松下電器産業株式会社 プラズマディスプレイパネル、その製造方法及び製造装置
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000114479A (ja) * 1998-10-01 2000-04-21 Toshiba Corp 導電性膜の形成方法およびそれを用いたキャパシタの形成方法
JP2000150861A (ja) * 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) * 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
JP2000173945A (ja) 1998-12-02 2000-06-23 Sharp Corp 半導体基板用縦型熱処理装置
JP2000357586A (ja) 1999-06-15 2000-12-26 Sharp Corp 薄膜ｅｌ素子の製造方法および薄膜ｅｌ素子
TW460731B (en) * 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP3460649B2 (ja) * 1999-11-19 2003-10-27 住友金属工業株式会社 半導体装置の製造方法
JP2001308335A (ja) * 2000-04-24 2001-11-02 Matsushita Electric Ind Co Ltd 薄膜トランジスタの製造方法および表示装置
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
JP4540201B2 (ja) 2000-09-13 2010-09-08 独立行政法人産業技術総合研究所 ＺｎＯ系酸化物半導体層を有する半導体装置の製法
KR20020038482A (ko) * 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) * 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP4090716B2 (ja) * 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
WO2003040441A1 (fr) * 2001-11-05 2003-05-15 Japan Science And Technology Agency Film mince monocristallin homologue a super-reseau naturel, procede de preparation et dispositif dans lequel est utilise ledit film mince monocristallin
JP4083486B2 (ja) * 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
CN1445821A (zh) * 2002-03-15 2003-10-01 三洋电机株式会社 ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法
JP3819793B2 (ja) * 2002-03-15 2006-09-13 三洋電機株式会社 成膜方法及び半導体装置の製造方法
JP3933591B2 (ja) * 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
JP3695416B2 (ja) * 2002-04-11 2005-09-14 昭和電工株式会社 リン化硼素系半導体層、その製造方法、及びリン化硼素系半導体素子
US7339187B2 (en) * 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
US7189992B2 (en) 2002-05-21 2007-03-13 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures having a transparent channel
JP2004022625A (ja) * 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) * 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) * 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
US20040112735A1 (en) * 2002-12-17 2004-06-17 Applied Materials, Inc. Pulsed magnetron for sputter deposition
JP2004235180A (ja) * 2003-01-28 2004-08-19 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP2004311965A (ja) 2003-03-26 2004-11-04 Canon Inc 光起電力素子の製造方法
JP4108633B2 (ja) * 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) * 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US7824498B2 (en) 2004-02-24 2010-11-02 Applied Materials, Inc. Coating for reducing contamination of substrates during processing
US7282782B2 (en) * 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
CN1998087B (zh) * 2004-03-12 2014-12-31 独立行政法人科学技术振兴机构 非晶形氧化物和薄膜晶体管
US7145174B2 (en) * 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7297977B2 (en) * 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
JP2005268724A (ja) 2004-03-22 2005-09-29 Sony Corp 電子素子およびその製造方法
TW200541079A (en) 2004-06-04 2005-12-16 Adv Lcd Tech Dev Ct Co Ltd Crystallizing method, thin-film transistor manufacturing method, thin-film transistor, and display device
US7211825B2 (en) * 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (ja) * 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) * 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7382421B2 (en) 2004-10-12 2008-06-03 Hewlett-Packard Development Company, L.P. Thin film transistor with a passivation layer
US7298084B2 (en) * 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7791072B2 (en) * 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
JP5138163B2 (ja) 2004-11-10 2013-02-06 キヤノン株式会社 電界効果型トランジスタ
JP5126729B2 (ja) 2004-11-10 2013-01-23 キヤノン株式会社 画像表示装置
KR20070085879A (ko) * 2004-11-10 2007-08-27 캐논 가부시끼가이샤 발광 장치
JP5118810B2 (ja) 2004-11-10 2013-01-16 キヤノン株式会社 電界効果型トランジスタ
JP5126730B2 (ja) * 2004-11-10 2013-01-23 キヤノン株式会社 電界効果型トランジスタの製造方法
US7868326B2 (en) * 2004-11-10 2011-01-11 Canon Kabushiki Kaisha Field effect transistor
US7863611B2 (en) * 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7453065B2 (en) * 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
CA2585190A1 (en) * 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
JP5094019B2 (ja) 2005-01-21 2012-12-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7579224B2 (en) * 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI569441B (zh) * 2005-01-28 2017-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI472037B (zh) * 2005-01-28 2015-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) * 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) * 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) * 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) * 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US7544967B2 (en) * 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
US7645478B2 (en) * 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) * 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006302679A (ja) 2005-04-21 2006-11-02 Seiko Epson Corp 導電膜の形成方法、及び電子機器の製造方法
JP2006344849A (ja) * 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7691666B2 (en) * 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 (en) * 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) * 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007041260A (ja) 2005-08-03 2007-02-15 Fujifilm Holdings Corp 液晶表示素子
JP2007059128A (ja) * 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP4870404B2 (ja) * 2005-09-02 2012-02-08 財団法人高知県産業振興センター 薄膜トランジスタの製法
JP4870403B2 (ja) * 2005-09-02 2012-02-08 財団法人高知県産業振興センター 薄膜トランジスタの製法
JP4280736B2 (ja) * 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP5116225B2 (ja) * 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP4850457B2 (ja) * 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP4560502B2 (ja) 2005-09-06 2010-10-13 キヤノン株式会社 電界効果型トランジスタ
JP2007073705A (ja) * 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
EP1998373A3 (en) 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP2007115808A (ja) * 2005-10-19 2007-05-10 Toppan Printing Co Ltd トランジスタ
JP5037808B2 (ja) * 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
WO2007058329A1 (en) * 2005-11-15 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5250929B2 (ja) 2005-11-30 2013-07-31 凸版印刷株式会社 トランジスタおよびその製造方法
TWI292281B (en) * 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) * 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) * 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) * 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) * 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) * 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
KR100785038B1 (ko) 2006-04-17 2007-12-12 삼성전자주식회사 비정질 ＺｎＯ계 ＴＦＴ
US20070252928A1 (en) * 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP2007311404A (ja) * 2006-05-16 2007-11-29 Fuji Electric Holdings Co Ltd 薄膜トランジスタの製造方法
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4999400B2 (ja) * 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) * 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP5127183B2 (ja) 2006-08-23 2013-01-23 キヤノン株式会社 アモルファス酸化物半導体膜を用いた薄膜トランジスタの製造方法
JP5128792B2 (ja) 2006-08-31 2013-01-23 財団法人高知県産業振興センター 薄膜トランジスタの製法
JP4332545B2 (ja) * 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP5164357B2 (ja) * 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP4274219B2 (ja) * 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
US7622371B2 (en) * 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7511343B2 (en) 2006-10-12 2009-03-31 Xerox Corporation Thin film transistor
JP4741453B2 (ja) 2006-11-22 2011-08-03 本田技研工業株式会社 車体フロア構造
US7772021B2 (en) * 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) * 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
US8120114B2 (en) * 2006-12-27 2012-02-21 Intel Corporation Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate
KR101303578B1 (ko) * 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) * 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR101312259B1 (ko) 2007-02-09 2013-09-25 삼성전자주식회사 박막 트랜지스터 및 그 제조방법
TWI478347B (zh) * 2007-02-09 2015-03-21 Idemitsu Kosan Co A thin film transistor, a thin film transistor substrate, and an image display device, and an image display device, and a semiconductor device
KR101410926B1 (ko) * 2007-02-16 2014-06-24 삼성전자주식회사 박막 트랜지스터 및 그 제조방법
WO2008105347A1 (en) * 2007-02-20 2008-09-04 Canon Kabushiki Kaisha Thin-film transistor fabrication process and display device
US8436349B2 (en) 2007-02-20 2013-05-07 Canon Kabushiki Kaisha Thin-film transistor fabrication process and display device
JP5196870B2 (ja) 2007-05-23 2013-05-15 キヤノン株式会社 酸化物半導体を用いた電子素子及びその製造方法
JP2008235871A (ja) * 2007-02-20 2008-10-02 Canon Inc 薄膜トランジスタの形成方法及び表示装置
KR100851215B1 (ko) * 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
CN101680081B (zh) * 2007-03-20 2012-10-31 出光兴产株式会社 溅射靶、氧化物半导体膜及半导体器件
US8158974B2 (en) * 2007-03-23 2012-04-17 Idemitsu Kosan Co., Ltd. Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor
JP5244331B2 (ja) 2007-03-26 2013-07-24 出光興産株式会社 非晶質酸化物半導体薄膜、その製造方法、薄膜トランジスタの製造方法、電界効果型トランジスタ、発光装置、表示装置及びスパッタリングターゲット
WO2008126879A1 (en) * 2007-04-09 2008-10-23 Canon Kabushiki Kaisha Light-emitting apparatus and production method thereof
JP5197058B2 (ja) * 2007-04-09 2013-05-15 キヤノン株式会社 発光装置とその作製方法
US7795613B2 (en) * 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) * 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) * 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) * 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
CN101663762B (zh) * 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
KR100982395B1 (ko) 2007-04-25 2010-09-14 주식회사 엘지화학 박막 트랜지스터 및 이의 제조방법
JP5408842B2 (ja) * 2007-04-27 2014-02-05 キヤノン株式会社 発光装置およびその製造方法
KR20080099084A (ko) * 2007-05-08 2008-11-12 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법
JP5215589B2 (ja) 2007-05-11 2013-06-19 キヤノン株式会社 絶縁ゲート型トランジスタ及び表示装置
JP5294651B2 (ja) 2007-05-18 2013-09-18 キヤノン株式会社 インバータの作製方法及びインバータ
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
KR101092483B1 (ko) 2007-05-31 2011-12-13 캐논 가부시끼가이샤 산화물 반도체를 사용한 박막트랜지스터의 제조 방법
JP5242083B2 (ja) 2007-06-13 2013-07-24 出光興産株式会社 結晶酸化物半導体、及びそれを用いてなる薄膜トランジスタ
US7682882B2 (en) * 2007-06-20 2010-03-23 Samsung Electronics Co., Ltd. Method of manufacturing ZnO-based thin film transistor
US20090001881A1 (en) 2007-06-28 2009-01-01 Masaya Nakayama Organic el display and manufacturing method thereof
JP2009031750A (ja) 2007-06-28 2009-02-12 Fujifilm Corp 有機ｅｌ表示装置およびその製造方法
JP2009041713A (ja) 2007-08-10 2009-02-26 Nissan Motor Co Ltd 車両空調用クラッチ制御装置
KR101576813B1 (ko) 2007-08-17 2015-12-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
TWI453915B (zh) * 2007-09-10 2014-09-21 Idemitsu Kosan Co Thin film transistor
JP5354999B2 (ja) * 2007-09-26 2013-11-27 キヤノン株式会社 電界効果型トランジスタの製造方法
JP4759598B2 (ja) 2007-09-28 2011-08-31 キヤノン株式会社 薄膜トランジスタ、その製造方法及びそれを用いた表示装置
JP2009099847A (ja) 2007-10-18 2009-05-07 Canon Inc 薄膜トランジスタとその製造方法及び表示装置
JP2009134274A (ja) 2007-10-30 2009-06-18 Semiconductor Energy Lab Co Ltd 液晶表示装置の作製方法
JP2009128761A (ja) 2007-11-27 2009-06-11 Sharp Corp 基板装置及びその製造方法並びに表示装置
KR101270174B1 (ko) 2007-12-03 2013-05-31 삼성전자주식회사 산화물 반도체 박막 트랜지스터의 제조방법
JP5213422B2 (ja) * 2007-12-04 2013-06-19 キヤノン株式会社 絶縁層を有する酸化物半導体素子およびそれを用いた表示装置
JP5215158B2 (ja) * 2007-12-17 2013-06-19 富士フイルム株式会社 無機結晶性配向膜及びその製造方法、半導体デバイス
CN101911303B (zh) 2007-12-25 2013-03-27 出光兴产株式会社 氧化物半导体场效应晶体管及其制造方法
WO2009093625A1 (ja) * 2008-01-23 2009-07-30 Idemitsu Kosan Co., Ltd. 電界効果型トランジスタ及びその製造方法、それを用いた表示装置、並びに半導体装置
JP5217564B2 (ja) * 2008-03-28 2013-06-19 カシオ計算機株式会社 発光装置の製造方法
JP5325446B2 (ja) * 2008-04-16 2013-10-23 株式会社日立製作所 半導体装置及びその製造方法
KR100963104B1 (ko) 2008-07-08 2010-06-14 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
US7812346B2 (en) 2008-07-16 2010-10-12 Cbrite, Inc. Metal oxide TFT with improved carrier mobility
TWI875442B (zh) 2008-07-31 2025-03-01 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
JP5608347B2 (ja) 2008-08-08 2014-10-15 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US8129718B2 (en) 2008-08-28 2012-03-06 Canon Kabushiki Kaisha Amorphous oxide semiconductor and thin film transistor using the same
US9082857B2 (en) 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
JP4623179B2 (ja) * 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) * 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
EP2184783B1 (en) 2008-11-07 2012-10-03 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and method for manufacturing the same
KR101609727B1 (ko) 2008-12-17 2016-04-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 이의 제조 방법
TWI431130B (zh) * 2008-12-19 2014-03-21 Applied Materials Inc 銅黑銅鐵礦透明ｐ型半導體之製造及應用方法
TWI489628B (zh) 2009-04-02 2015-06-21 Semiconductor Energy Lab 半導體裝置和其製造方法
CN104576748B (zh) 2009-06-30 2019-03-15 株式会社半导体能源研究所 半导体装置的制造方法
WO2011002046A1 (en) 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101645146B1 (ko) 2009-06-30 2016-08-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
KR101944656B1 (ko) 2009-06-30 2019-04-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
JP5663214B2 (ja) 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101476817B1 (ko) 2009-07-03 2014-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터를 갖는 표시 장치 및 그 제작 방법
KR102503687B1 (ko) 2009-07-03 2023-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
WO2011004755A1 (en) 2009-07-10 2011-01-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011062043A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8906756B2 (en) * 2010-05-21 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070085075A1 (en) * 2003-04-02 2007-04-19 Semiconductor Energy Laboratory Co., Ltd. Light Emitting Device, Electronic Equipment and Apparatus For Manufacturing the Same
TW200845397A (en) * 2007-02-28 2008-11-16 Canon Kk Thin-film transistor and method of manufacturing same
EP2006903A2 (en) * 2007-06-19 2008-12-24 Samsung SDI Co., Ltd. Method of fabricating polycrystalline silicon, TFT fabricated using the same, method of fabricating the TFT, and organic light emitting diode display device including the TFT
TW200937638A (en) * 2007-12-13 2009-09-01 Idemitsu Kosan Co Field effect transistor using oxide semiconductor and method for manufacturing the same
TW200936792A (en) * 2007-12-27 2009-09-01 Nippon Mining Co Process for producing thin film of a-igzo oxide

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