TWI289612B - Method for forming a film layer on a substrate - Google Patents

Method for forming a film layer on a substrate Download PDF

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Publication number
TWI289612B
TWI289612B TW092106756A TW92106756A TWI289612B TW I289612 B TWI289612 B TW I289612B TW 092106756 A TW092106756 A TW 092106756A TW 92106756 A TW92106756 A TW 92106756A TW I289612 B TWI289612 B TW I289612B
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Taiwan
Prior art keywords
precursor
process gas
substrate
flow rate
gas composition
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TW092106756A
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English (en)
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TW200306359A (en
Inventor
Kam S Law
William R Harshbarger
Soo-Young Choi
Sanjay Yadav
Quanyuan Shang
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Applied Materials Inc
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Publication of TWI289612B publication Critical patent/TWI289612B/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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  • Chemical Vapour Deposition (AREA)

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1289612 玖、發明說明 【發明所屬之技術領域】 本發明是有關於一種薄膜層之沉積方法，且特別是有關於 一種主動矩陣式液晶顯示器的薄膜層沉積方法。 【先前技術】 主動矩陣式液晶顯示器（Active Matrix Liquid Crystal Display ; AMLCD)已解決許多被動式顯示器的相關問題。舉例來 說’主動矩陣式液晶顯示器的製造使得顯示器螢幕相較於使用其 他技術的顯示器具有更大的亮度（Brightness)、更佳的清晰率 (Readability)、更大的色度（Color Shades)變化以及更廣的視角。 一般來說，主動矩陣式液晶顯示器係由稱之為畫素（pixel)的圖案 元件之矩陣所構成。顯示器中的每個晝素並連接到一電子開關 (Electronic Switch)，以控制其操作。此電子開關有很多種類， 例如薄膜電晶體（Thin Film Transistor ; TFT)或有機發光二極體 (Organic Light Emitting Diodes ; 〇LED)，都被研究來控制晝素 之操作。其中，特別是薄膜電晶體可提供高程度的設計彈性與元 件表現。 薄膜電晶體通常形成於具有高光學透明度的大面積基板 上，例如玻璃基板。第1圖所繪示為薄膜電晶體的剖面示意圖， 其中此一薄膜電晶體122具有底閘極結構（B〇tt〇m Gate Structure)。該薄膜電晶體包含玻璃基板1〇1，其具有一底層ι〇2 形成於玻璃基板ιοί表面上。一閘極則形成於底層1〇2上，由閘 極金屬層以及閘極介電層108所構成’係控制電晶體中電荷 1289612 載子的移動。形成於閘極金屬層1 04上的閘極介電層i 08係使閘 極金屬層104電性隔離位於其上的半導體層11〇、半導體層n4a 以及半導體層H4b，這些半導體層各具有其功能以提供電荷載 子至電晶體。電晶體的源極區域118a形成於半導體層114a上， 而汲極區域118b則形成於半導體層1141)上。最後，保護層12〇 係將薄膜電晶體122封入其中，以保護薄膜電晶體122不受環境 損害，如水氣與氧氣。 上述之母層結構對薄膜電晶體的電性表現都相當關鍵。特 別疋，閘極介電層須具有一定程度的品質（例如低平帶電壓 (Vfb))，以使電晶體具有一般的期望電性參數，例如高崩潰電壓 (Vb)。 使用習知技術可沉積許多薄膜層，例如電漿加強化學氣相 /儿積（PECVD)製程。但是，使用電聚加強化學氣相沉積製程來沉 積薄膜層需要高製程溫度，這樣對某些基板1如玻璃基板來 說’並不適合。因為玻璃材質可能會因此軟化而在尺寸上變得不 穩定。 所以，亟需發展一種可於溫度敏感的基板上形成高品質薄 膜的方法。 【發明内容】 本發明的目的就是在提供一種薄膜層沉積方法，利用循環 沉積製程來沉積薄膜層。此循環沉積製程實質上係包含實質連續 流動-或多個製程氣體，並由脈衝以及非脈衝的交互週期來二 1289612 整，其中，脈衝週期係在脈衝前驅 ,, 物至製程環境以及脈衝能量到 氣程環境以產生電漿之間交替。 因此，此方法實質上包含將基板 置於一製程反應室，在若干製程停 制 朱件下使基板暴露於連續流動之 衣程氣體組合物中，並提供非脈衝的— 週期。接者，提供前驅物 之脈衝至製程環境中。在這樣的製 片 表私條件下，前驅物並不與製程 軋體組合物反應。一旦提供前驅 至i私裱境中後，則提供非脈 衝的第二週期。之後，提供高 只手電力至製程環境中以產生電 水ΰ在電漿環境下，製程氣體 物則與前驅物進行反應。這樣 的反應則可生成一薄膜層。並且重 里硬脈衝與非脈衝步驟，直到形 成所期望的薄膜厚度。 本發明的方法除了反應氣體外， 外並不像習知方法還須提供 载氣（Carrier Gas)或淨化氣體（Pu ^ 訌Gas)。用以替代的是在所需 薄膜層的沉積過程中，提供連續或實 貝上為連、、·貝的「製程氣體」 或「製程氣體組合物」至反應室中重 T事實上，使用任何前驅物以 及氣體組成可沉積任何的薄膜層，σ I兑 ^ ，、要則驅物以及氣體組成在一 夠能量以產生電聚的製程環境下才進行相互反應即可。〜 【實施方式】 本發明係揭露一種循環沉積方法，用以在基板上形成—薄 膜層。本發明之方法除了反應氣體外，並不需提供栽氣與 化氣體，而在所需薄膜層的沉積過程中，提供連續或實質上為連 續的「製程氣體」或「製程氣體組合物」至反應室中。事實： 1289612 使用任何前驅物以及氣體組成可沉積任何的薄膜層，只要前驅物 以及氣體組成在-般製程條件下並不互相反應（或具有極微小的 反應），僅在供應足夠能量以產生電漿的製程環境下才進行相互 反應即可 第2圖所緣示為實施本發明之方法所使用的製程反應室設 備之剖面示意圖…，設備1〇包括一沉積反應室12，此沉積 反應室12之頂面14中具有-開口，並且—第一電極或氣體之入 口管線16係位於此開口中。或者，頂面14與電極Μ之間可為 緊密無空隙地而相接於内表面。在反應室12中並具有一支撐旋 轉系統（SuSCept〇r)18,此支撐旋轉系统18為平板形式並與第一 電極16相互平行，並可由紹金屬層或以塗佈有氧㈣之材料所 構成。此支#旋轉系統18係接地以作為第二電極，並且位於轴 2〇的-端。此幸由20係由沉積反應室12的底面22垂直延伸出， 並且可垂直地上下移動，使得支撐旋轉系統18也可垂直地上下 移動，以接近或遠離第一電極16。一升舉平板（Lif卜〇ffpiate)24 係在支撐旋轉系統18與沉積反應室12的底面22之間，水平地 延伸出來，並且實質上與支撐旋轉系統18相互平行。升舉栓 (Lift-off pin)26垂直往上突出於升舉平板24的表面，並置於可 由支撐旋轉U 18之孔、洞28㈣的位置上，其厚度較支稽旋轉 系統1S的厚度較厚些。除了如时所示升舉平板Μ上僅具有兩 個升舉栓26之外，更可於升舉平板24上安置更多互相間隔的多 個升舉栓26。氣體出口 30係由沉積反應室12的一側面32延伸 出來，並且與用以排空製程反應室12的裝置（未繪示）連接。氣 1289612 :路42係由沉積反應室12的第一電極管線或氣體入口管 l伸出來’並且由n㈣網路（ 體來源（切示）。帛_電極16並連接至 卫運接至一射頻電力源36。另外， ^具有-傳送平板（未緣示）可用以承載基板使其經由 ㈣口（切示）進入沉積反應室12，並置於支撐旋轉系㈣上， 、且也由沉積反應t12中移出以完成沉積的基板。 在製程反應室10.的操作中，首先利用傳送平板（未緣示）栽 入基板巧於沉積反應室12中’並置於支擇旋轉系統以上。美 板38的尺寸必須超過支標旋轉系統18中孔润28的位置。支揮 旋轉系統18可藉由移動轴2G上升，使得基板38上升遠離轉 栓26,也因此升舉栓26並不突出於孔㈣，並且支揮旋轉系統 '與基板38可相對地接近於第一電極16。在基板表面與氣體入 口管線16之電荷表面之間的電極間隔或距離，可依所使用的前 藤物與製程氣體種類或所形成之薄膜的期望特性，而調整到最佳 化。 在此係描述薄膜層的沉積方4，係利用㈣沉積製程。循 環沉積製程包括吸附基板上的前驅物，接著當能量供應至系統中 時，前驅物即與製程氣體或製程氣體組合物進行反應，以形成薄 膜層於基板上。使用任何前驅物以及氣體組成可沉積任何薄膜， 只要前驅物以及氣體組成在一般製程條件下並不互相反應（或具 有極微小的反應），僅在供應足夠能量以產生電漿的製程環境下 才進行相互反應即可。舉例來說，可料樣的方法形成閘極介電 I289612 層’例如氮化矽（Si3N4)、氧化矽（SiO)、二氧化矽（Si02)、氮化鋁 或氧化鋁等。 第3圖所繪示為形成薄膜層沉積之不同步驟的製程順序4〇〇 圖。這些步驟可在製程反應室中進行，如第2圖之描述。一般來 說’例如溫度、壓力、製程氣體、前驅物流率、電力與脈衝時間 等沉積條件，依照所使用的不同製程氣體、前驅物與反應室等而 有所不同。但是，所選擇的條件必須是使前驅物與製程氣體組合 物的在一般製程條件下不反應，僅在電漿產生呈製程環境中時才 進行反應。 如步驟402所示，提供基板至製程反應室中。此基板可例 如由矽、玻璃或塑膠等適合於薄膜層形成的材料所構成。並調整 製程反應室條件，例如溫度與壓力，以加強前驅物與製程氣體的 反應。一般說來，根據本發明對薄膜層的沉積，基板應維持在小 於50(TC的溫度之下，較佳係在約35代，並且製程反應室的壓 力大約介於10毫托（milli-torr)至10托（torr)之間。 然而’在本發明中，製程氣體或製程氣體組合物為一反應
的實施例 而淨化氣體不像载氣， 2)、氫氣（H2)及其 如步驟404所描述。並且， S擇’以同時作為反應物氣 ’作為载氣的通常為非反 、氮氣（N2)、氫氣（h2)及 非反應性氣體，可與載氣相同或不同。然 並不非以連續或實質上連續的流動方式來 1289612 提供，而是以預定義間隔供應至系統中。 反應物氣體係為可在反應室中影響某些化學反應的氣體。 舉例來說，反應物氣體可作為反應的催化劑，或者，可作為化學 反應的反應物。根據系統及其所進行的化學反應不同，反應物氣 體一般與非反應性之载氣或淨化氣體組成不同。舉例來說，對氮 化層的沉積則可利用包含例如氨氣（ΜΗ3)、聯氨（N2H〇、氮氣及 其混合物等氣體作為反應性氣體。而對沉積氧化層來說，其他適 合的反應氣體也可包含氧氣（〇2)、臭氧（〇3)、氫氣 '水蒸氣及其 混合物等。在本發明中，一氣體組成物（製程氣體或製程氣體組 合物）具有習知所用載體、淨化氣體與反應氣體的所有目的。 傳送製程氣體或製程氣體組合物的條件，係隨著製程中的 其他條件不同來進行選擇，例如所使用之製程氣體、其他製程條 件（如反應室溫度和壓力）以及反應室尺寸等。舉例來說，可提供 約介於200每秒標準立方公分卜⑶…至3〇〇〇sccm之間或更大量 的製程氣體於反應室中。 凊參照步驟406，在製程氣體流於製程反應室中形成後，可 將一前驅物的脈衝加至氣體流。舉例來說，含矽之前驅物可包含 i化矽化合物，例如四氣化矽（Sicl4)、二氯矽以及 二氯矽烷（SiChH)。含矽的前驅物並可包括其他適合的含矽化合 物’包含例如石夕氧烷化合物（Sil〇xane)、矽烷（SiH4)或二矽烷 (ShH6)等等。在此所使用的脈衝係指注入製程反應室或氣體流之 一材料劑量（dose)。這樣的劑量可為預定義持續時間的單一注入 11 1289612 里’或使連續的數份注入量。前驅物的脈衝以預定義之一時間間 隔持續著。 前驅物之脈衝的時間間隔可依據數個因素而加改變，例如 所使用之製程反應室的體積容量、其所連接的真空系統以及所使 用之反應物的揮發度與反應度等。舉例來說，一前驅物脈衝可持 續約0.2秒至5秒之間，較佳者為0.5秒至2秒之間，更佳者為 約〇·7秒至1秒之間。然而，前驅物脈衝的持續時間可依據反應 至與基板尺寸以及前驅物與氣體流率不同而改變。前驅物之流率 大約介於lOOsccm至lOOOsccm之間，較佳者係介於2〇〇sccm至 5〇〇sCCm之間。一般來說，可有利地選擇製程條件，讓前驅物脈 衝可提供一足量，使得前驅物之至少一單層吸附於基板上。之 後可利用製程氣體蒸氣與真空系統的結合，將反應室中過量的 前驅物由其中移除。 步驟408中，在過量的前驅物已充分地由製程反應室中利 用製程氣體蒸氣去除後，如射頻電力之一高頻電力，係供應至反 應至中。舉例來說，可經由f麗頭（Sh〇werhead)或支擇旋轉系統 (基板支撐設備）來m；槳m係由在製程反應冑巾的氣體 組成所構成。高頻電力對基板支撐臺座的應用，係以—預定時間 間隔持續著，例如約2秒至10秒之間，或者3秒到5秒之間。 -般對薄膜沉積來說，可供應大小約介於5〇〇瓦(Watt; w)至約 2〇〇〇w之間的高頻電力，較佳者為介於75〇w至約i75w之間， 更佳者為介於900W至約1200W之間。 步驟404至步驟408包含一壤胳麻々 ^ a 溥膜層之一沉積週期的實施 12 1289612 例。在此實施例中，係提供實質上為固定流率之製程氣體流至製 程反應室中，並由脈衝與非脈衝的的交替週期來控制，其中脈衝 週期在前驅物與高頻率電力之間交替，而非脈衝週期實質上則包 含製程氣體流。利用本發明僅需提供反應氣體，無須提供載氣與 /或淨化氣體的需要，而是使用一製程氣體組合物（包含一或多種 反應氣體）來作為替代。然而熟悉此技藝者，應了解基板製程並 可包括週期地停止製程氣體組合物的流動，或者在製程中以另一 氣體來替代或結合製程氣體。 前驅物及高頻電力之每個脈衝的時間間隔可具有同樣的持 續期間。也就是說，前驅物脈衝的持續時間可與高頻電力脈衝的 持、’、貝時間70全相同。在這樣的實施例中，前驅物脈衝的時間間隔 (τ〗）等於高頻電力脈衝的時間間隔（τ2)。 或者，前驅物及高頻電力之每個脈衝的時間間隔也可具有 不同的持續時間。也就是說，前驅物脈衝的持續時間可短於或長 於高頻電力脈衝的持續時間。在這樣的實施例中，前驅物脈衝的 的時間間隔（Tl)與高頻電力脈衝的時間間隔（τ2)並不相同。 此外，介於前驅物及高頻電力之每個脈衝間的非脈衝週期 可具有相同的持續時間。也就是說，介於前驅物之每個脈衝與^ 頻電力脈衝間的非脈衝週期之持續時間為完全相同的。在此實Ζ 例中’介於前驅物脈衝與高頻電力脈衝之間的非脈衝時間間隔 (Τ3)，等於介於高頻電力脈衝與前驅物脈衝之間的非脈衝時間間 隔㈤。在非脈衝之時間週期，係提供固定的製程氣體流至製^ 反應室中。 13 1289612 或者，介於前驅物及高頻電力之每個脈衝間的非脈衝週期 可具有不同的持’續時間。也就是說，介於前驅物之每個脈衝與高 頻電力之每個脈衝間的非脈衝週期之持續時間，可短於或長於介 於同頻電力與前驅物之每個脈衝的非脈衝週期的持續時間。在此 實施例中，介於前驅物脈衝與高頻電力脈衝之間的非脈衝時間間 隔（丁3)，與介於高頻電力脈衝與前驅物脈衝間的非脈衝時間間隔 (T4)並不相同。在非脈衝之時間週期，僅有固定的製程氣體流提 供至製程反應室中。 前驅物、高頻電力以及介於每個沉積之間之非脈衝週期的 時間間隔也可具有相同的持續時間。在這樣的實施例中，前驅物 之時間間隔⑴)、高頻電力之時間間隔㈤、介於前驅物脈衝及 高頻電力脈衝之間的非脈衝之時間間隔(T3)以及介於高頻電力 脈衝與前驅物脈衝之間的非脈衝之時間間隔（Τ4)，在每個隨後的 沉積週期中皆可具有相同值。舉例來說，纟第一沉積週期⑹ 中，前驅物之時間間隔㈤與隨後之沉積週期（c2.cN)中的前驅 物之時間間隔（T1)具有相同的持續時間。同樣地，在第一沉積週 期（C!)中’高頻電力之每個脈衝以及介㈣驅物脈衝及高頻電力 脈衝之間非脈衝週期的持續時間’與隨後的沉積週期中 的高頻電力之每個脈衝以及介於前驅物脈衝及高頻電力_之 間非脈衝週期的持續時間分別具有相同值。 此外，-個或多個間極介電層沉積製程之沉積週期中’前 驅物、高頻電力以及非脈衝週期之至少一脈衝的時間間隔，也可 具有不同值。在此實施例中，前臁私* -仏A ,、k 14 1289612
隔、南頻電力之脈衝的時間間隔（τ〇、介於前驅物脈衝及高頻電 力脈衝之間的時間間隔（Τ3)、以及介於高頻電力脈衝及前驅物脈 衝之間的時間間隔（τ〇，皆在後續薄膜層沉積製程的一或多個沉 積週期中，具有不同值。舉例來說，在第一沉積週期（C0中，前 驅物脈衝的時間間隔（Τι)可長於或短於隨後的沉積週期（c2…Cn) 中的别驅物之時間間隔（T〗）。同樣地，在第一沉積週期（C1)中， 阿頻電力之每個脈衝以及介於前驅物脈衝及高頻電力脈衝之間 非脈衝週期的持續時間’與隨後的沉積週期（Cl .Cn)中的高頻電 力之母個脈衝以及介於前驅物脈衝及高頻電力脈衝之間非脈衝 週』的持續時間分別可為相同或不同。熟悉此技藝者並可知一 個脈衝可為早一劑量或注入量的化合物、應用或能量的，或者 也為兩個以上的連續劑量或注入量。 請參照步驟410,在每個沉積週期之後（步驟404至步塌 408)’具有—㈣厚度的薄膜層即形成於基板上。根據特定元科
的需求’可進行步驟411 ’繼續沉積週期以達到所需厚度。也就 是說，可重複步驟404至步驟4〇8直 ,m LU上土 寻膘層的所需厚度為 止。因此，當達到薄膜層所需厚度， 步 驟413以停止製程。 如…U所示，進行步 沉積含矽閘極薄膜層的一般製程包括 ^ ^ φ ^ ^ e 氧氣與氧氣的混合 裝私轧體中，獒供四氯化矽的脈衝來沉 可使四氣化矽描供/、㈠ 積3矽閑極介電層。並且 7便四氯化矽獒供在一適當的流動控制值， 控制值，介於約5Gseem至5G()see 1子操縱流動 約20〇SCCm，並且因此脈衝時間約為2秒：，較佳的流率則 / $小於2秒，較佳者則 15 1289612
約為0·5秒至1秒之間。而氫氣與氧氣的流率則提供在介於約 50〇SCCm至250〇sccm之間，較佳者則介於約i〇〇〇sccm至 2000sCCm之間。而製程氣體也可提供在一適當的流體控制值， 例如一電子操縱流動控制值。基板也可置於維持在約介於 0.05t〇n:至lOton;之間的反應室壓力中，並且其周圍的溫度係小 於50(TC，較佳者係小於35(TC。上述對含矽前驅物的流率以及 反應物氣體，可依據製程反應室的體積容量而加以改變。高頻電 力能量源可為約介於250W至2000W之間的射頻，較佳者為介 於500W至1500W之間。 第4圖至第9圖所繪示為二氧化矽閘極介電層之沉積中， 不同沉積參數對薄膜厚度的影響。第4圖所繪示為四氯切脈衝 的時間長度對沉積厚度的影響。值得注意的是，最大厚度可在每 個脈衝小於0.8秒時達到，並且厚度在時間超過丨秒時會減少。 第5圖所繪示為射頻脈衝的長度對薄膜厚度的曲線關係圖。值得 注意的是，脈衝的最大效率可在3秒至5秒之間達到。
隔之時間影響關係圖，第7圖所繪示為能量脈衝與前驅物脈《 間之非脈衝間隔的時間影響關係圖，第8圖所♦示為電極心 薄膜厚度的影響’而第9圖所繪示為射頻電力對薄膜厚产$ 響。 、又 t體電路 底閘極薄臈電晶體 第1 〇A圖至第1 〇c圖係繪示為在底閘極薄膜電晶體製程 16 1289612 中’使用電漿加強化學氣相沉積製程來形成閘極介電層之不同階 k ’基板的剖面示意圖。這個特別的電晶體製造順序係為主動矩 陣液晶顯示器中的-開關元件’並且此製程並說明使用在主動矩 陣液晶顯w巾的關料的—實施狀形成。舉例來說，第 10A圖係說明基板600的剖面圖，此基板6〇〇可由實質上在可見 光•曰中具有光學透明度的材料所構& ’例如玻璃或透明塑膠，包 括鈉約玻璃（Soda-Lime Glass)、珊石夕玻璃（B〇r〇siHcate Guss)或 石英玻璃等。基板並可在形狀與尺寸上加以變化。_般來說，在 薄膜電晶體應用方面’基板為玻璃基板，並且其尺寸約大於5〇〇 平方公釐（mm2)。 基板600並可在其上具有一底層6〇2。此底層6〇2可為絕緣 材料’例如二氧化矽或氮化矽。底層6〇2可利用習之沉積技術來 形成。 閘極金屬| 604則形成於底材6()2上。閘極金屬| 6〇4係 可控制薄膜電晶體中電荷載子之移動的導電層所構成。所以，閘 極金屬層604可由金屬層所構成，例如紹、鎢、鉻、组及其混合 物所構成。閘極金屬| 604並可使用習知沉積、微影以及蝕刻技 術來形成。 請參照第1〇B圖，閘極介電層608則形成於閘極金屬層6〇4 上。閘極介電f 608可由包含例如氮化梦（Si3N4)、氧化石夕(si〇) 以及二氧化矽等材料所構成，並且可利用上述第3圖所述之循環 沉積技術之一實施例來沉積。閘極介電層6〇8之形成厚度大約可 介於20埃（Angtroms)至5000埃之間。 17 1289612
另外’閘極介電層608可由兩層以μ AA 臂U上的結構來構成。在這 樣的實施例中，第一閘極介電層608a可剎μ +你 d】利用上述第3圖所之循 環沉積技術之一實施例來形成。此第一 又 乐閘極介電層608a可具有 與閘極介電層6 0 8相似之組成。 在沉積第一閘極介電層608a後，筮—鬥κ人而任 弟一閘極介電層608b可 利用習知沉積技術，例如化學氣相沉接 J 干乱相，儿積或電漿加強化學氣相沉 積，沉積於第一閘極介電層6〇8a上。第-門托入帝山与儿 昂一閘極介電層可由氧化
石夕、二氧化石夕或氮化石夕所構成。 並且，第一閘極介電層608a與第二閘極介電層6〇8b的選 擇組成可不相同。舉例來說，第一閘極介電層6〇8a可為二氧化 矽，而第二閘極介電層則由氮化矽所構成。 請參照第10C圖，一本體半導體層（Bulk Semiconductor
Layer)61〇係形成於閘極介電層6〇8上，並且可利用習知沉積技 術形成。此本體半導體層610可由例如非晶矽（Am〇rph〇us sinc〇n)
或聚結晶矽（Polycrystalline Smcon)所構成，其沉積厚度大約介 於20埃至5000埃之間。 餘刻終止層612則形成於本體半導體層61〇上，其可由包 含例如氮化矽之絕緣材料所構成。此蝕刻終止層612並可利用例 如電漿加強化學氣相沉積、化學氣相沉積、物理氣相沉積或此技 藝者所知之其他習知方法來形成。蚀刻終止層612與本體半導體 層6 1 0並可使用習知技術來進行微影或或蝕刻。 一摻雜半導體層6 1 4則形成於已圖案化的蝕刻終止層6 i 2 與本體半導體層610上。摻雜半導體層614可由例如矽所構成， 18 1289612 並且其厚度可介於約10埃至1〇〇埃之間。此摻雜半導體層 直接與本體半導體層610的部份區域接觸，而形成半導體體接面 (Junction) ° 透明導體層6 1 6則形成於部份閘極介電層60s與摻雜半導 體層614上，並可由在可見光譜中具有光學透明性以及具有導電 性的材質所構成。舉例來說，透明導電層6丨6可由包含銦錫氧化 物、氧化鋅等所構成，並且可利用習知技術來微影圖案化或蝕刻。 導電層618則形成於部份摻雜半導體層614以及透明導電 層6 1 6上，並可由包含例如鋁、鎢、鉬（M〇)、鉻、鈕及其混合物 等金屬所構成。此導電層6丨8並可利用習知沉積技術來形成。 不卿疋V電層618或是摻雜半導體層614都可進行微影圖 案化以疋義源極區域6 1 4a以及汲極區域6丨4b ,以及源極接觸 518a以及汲極接觸618b。薄膜電晶體的源極區域6丨“及汲極區 域614b並以蝕刻終止層612為界，而互相分開。 之後，保濩層620係沉積於基板65〇的頂面上，並覆蓋閘 和"電層608、源極接觸618a、汲極接觸61“、蝕刻終止層η。、 Η❹極61一及_ 614b。保護層㈣—般為絕緣層，可 由例如氧化矽或氮化矽所構成，並且可利用習知沉積技術來形 成。 頂閘極薄膜電晶體 A圖至帛11C圖係_示為在頂閘極薄膜電晶體製程 中’使用循環沉積製程來形成閘極介電層之不同階段的基板剖面 不意圖。這個電晶體製造順序為對主動矩陣液晶顯示器中的開關 19 1289612 元件，並且說明使用在主動矩陣液晶顯示器中的 施例之形成。例如，頂閘極薄膜電晶體可為金屬 開關矩陣的一實 氧化半導體場效 電晶體（MOSFET)或接面場效電晶體（JFET)。 舉例來說，第1 1 A圖係說明基板700的立| 7 面圖，此基板600 可由實質上在可見光譜中具有光學透明度的材料所構成 璃或透明塑膠，包括鈉鈣玻璃、硼矽酸玻璃或石英等。 並可在其上具有一底層702。此底層702可為絕緣材料 氧化矽或氮化矽。 ，例如玻 基板7 0 0 ，例如二
摻雜半導體層704則沉積於底層7G2 i，可切材料所構 成。摻雜半導體層704包含n型摻雜區域7〇4n以及p型摻雜區 域704p。在n型摻雜區域7〇411及p型摻雜區域7〇4p之間的界 面則為半導體接面，可提供薄膜電晶體具有扮演開關元件的能 力0 凊參照第11B圖，閘極介電層708則形成於n型摻雜區域 7〇4η及ρ型摻雜區域7〇4ρ上，並可由例如包含氮化石夕、氧化矽 與二氧化矽的材料所構成。 閘極介電層708可利用上述第3圖所述之循環沉積技術之 貝化例來沉積，其厚度並可介於約20埃至5000埃之間。 間極金屬層7 1 0則形成於閘極介電層708上，如第11 C圖 所不。閘極金屬層7 1 0係由可控制薄膜電晶體中電荷載子之移動 的導電層所構成。所以，閘極金屬層71〇可由金屬層所構成，例 如包含銘、鎢、鉻、鈕及其混合物之材料。閘極金屬層71〇可利 用習知沉積技術來形成。在沉積之後，並可利用習知微影與蝕刻 20 1289612 技術進行圖案化，以定義閘極位置。 在閘極金屬層710形成後，内 門屬；丨電層712並形成於其上。 内層介電層712可由例如氧化矽或f A鼠化矽之材料所構成，並可利 用習知沉積製程來形成。 内層介電層712並進行圖牵外 叮口累化，以暴露n型摻雜區域7〇4n 以及P型摻雜區域704p。内層介電 )丨电層7 1 2的圖案化區域可填滿 導體材料，以形成接觸窗72〇。此接 凡接觸® 720並可由包含例如鋁、 鎢、鉬、鉻、鈕及其混合物之材料 W計所構成，並可利用習知沉積技 術來形成。 之後，可形成保護層722於盆卜，仅嗜从 於，、上以保濩並將所完成的薄 膜電晶體725封於内部。保護層722 一般為絕緣材料，並可由例 如氧切或氮化料構成，並可利用f知沉積技術來形成。 與第10圖至第U圖之描述具有不同之半導體層配置，以 形成其他元件的方法’亦屬於本發明之範圍。舉例來說，開關元 可為又桎或單極電晶體元件的變化’其中閘極介電層可利用如 上所述之電漿加強製程來沉積。 實施例 ^、曰示使用本發明之方法來示範沉積二氧化矽的兩套 製程條件。在第-套資料中’氫氣和氧氣的流率都是500sccm， 而在第二套=蒼斗立士 技 、^ ’虱氣和氧氣的流率都是20〇〇sccm。值得注 思的是’第一套杳M rb >- 、 砮貝枓中四氟化矽脈衝與射頻脈衝之間的非脈衝週 期為0 · 5秒，而+ & 第一套資料中為〇·3秒’並且第一套資料中射 頻脈衝的電力炎 、 力為1000W，在第二套資料中為500瓦。 21 1289612 在第一套貝料中，薄膜厚度除以沉積週期的數目的比 為1·06 ,而在第二套資料中的D/R比為〇 69。
AGO H2 500 H2 500 H2 500 Η2 500 溫度 300 厚度 1014 〇2 500 〇2 500 〇2 500 02 500 週期 960 D/R 1.06 SiC 14 200 間隔 1100 C-V -0.87 1000W 0.5秒 3秒 0·5秒 0.7秒 H2 2000 H2 2000 H2 2000 H22000 溫度 300 Η2 977 〇21000 〇21000 〇21000 〇21000 週期 1420 2000 0.69 SiC 14 間隔 1600 Η2 -0.87 200 1000W 0.5秒 3秒 0.5秒 〇·7秒
第12A圖、第12B圖與第13圖所繪示為使用本發明之方法 所沉積之薄膜其平帶電壓曲線圖，其中第12A圖係繪示在退火 前的平帶電壓曲線圖，第丨2B圖係繪示在退火後的平帶電壓曲線 圖’而第13圖則繪示在氫氣與氧氣流率皆為500sccm、四氯化 石夕流率為200sccm、製程溫度為300°C、電極間隔為11〇〇、射頻 電力為1 00W、介於射頻與四氯化矽以及四氣化矽與射頻之脈衝 22 1289612 間(白為非脈衝)的非脈衝時間為0.5秒、以及 / 及四氣化矽脈衝Ά n 7勒 …員脈衝為3秒以 g妒脈衝為〇·7秒的條件下， τ儿積》專膜的平帶 雖然本發明已以一鈐技咸 τ m。 月已以較佳實施例揭露如上，鈇i *也、 定本發明，紅乂 ％ …、，、並非用以限 ♦’又月任何熟習此技藝者，在π胳私丄 内’當可作各種之"之精神和乾圍 戸合禋之更動與潤飾，因此本 之申社直糾#㈤ Λ乃之保蠖靶圍當視後附 之甲切專利乾圍所界定者為準。 【圖式簡單說明】 為讓本發明之上述和其他目的、 Λ ± 町特徵、優點與較佳實施例 月匕更明顯易懂，請辅以實施例描 曰一 4夂所附圖式。值得注意的 疋’《兒明書與所附圖示僅用以兮明太 以
用乂況明本發明特定實施例，而非用 限定本發明之範圍，且本發 + 士月允开其他具有相同功效的實施例 其中： 第1圖所繪示為底閘極之薄膜電晶體的剖面示意圖； 第2圖所繪不為實施本發明之方法所使用之製程反應室的 剖面示意圖； 第3圖所繪示為根據本發明一較佳實施例’使用循環沉積 技術以形成薄膜層的製程順序圖； 第4圖所繪示為前驅物對薄膜厚度之影響的曲線圖； 第5圖所繪示為射頻（RF)脈衝對薄膜厚度之影響的曲線圖·, 第6圖所繪示為在前驅物脈衝與電漿脈衝之間的非脈衝時 間對薄膜厚度之影響的曲線圖； 第7圖所繪示為在電漿脈衝與前驅物脈衝之間的非脈衝時 23 1289612 間對薄膜厚度之影響的曲線圖； ° 丁為在電極與基板之間的間隔（公釐）對薄膜厚 度之影響的曲線圖； 第9圖所繪示a & ·、、、射頻電力對薄膜厚度之影響的曲線圖； 第10A圖至第！ nr> ^ 圖所綠示為在底閘極（Bottom-gate)薄膜 電晶體製造流程的不同 U ^段中，基板的剖面示意圖·， 第11A圖至繁 土法。 田所繪不為在頂閘極（Top-gate)薄膜電晶 體製k 程的不同階段中.，
★ τ 基板的剖面示意圖； 第12圖所繪示為以 、 不^月之方法所沉積的閘極介電薄膜， 在退火前與退火後的平帶電壓曲線圖；以丨 、 第圖所繪示為以本發明之方法所沉積的閘極介電薄膜$ 平台電壓曲線圖。 ' >
【元件代表符號簡單說明】 10 設備 12 14 頂面 16 第一電極或氣體入 σ管線 18 支撐旋轉系統 20 22 底面 24 26 升舉栓 28 30 氟體出口 32 36 射頻電力源 38 42 氣體進入管線 44 沉積反應室 轴 升舉平板 孔洞 側面 基板 24 玻璃基板 102 底層 閘極金屬層 108 閘極介電層 半導體層 112 半導體層 114b 半導體層 源極區域 >及極區域 120 保護層 薄膜電晶體 400 製造流程 步驟 404 步驟 步驟 408 步驟 步驟 411 步驟 步驟 413 步驟 基板 602 底層 閘極金屬層 608 閘極介電層 第一閘極介電層 608b 第二閘極介電層 本體半導體層 612 14刻終止層 摻雜半導體層 614a 源極區域 >及極區域 616 透明導電層 導電層 618a 源極接觸 汲極接觸 620 保護層 基板 702 底層 摻雜半導體層 704η η型摻雜區域 P型摻雜區域 708 閘極介電層 閘極金屬層 712 内層介電層 25 1289612 720 接觸窗 722 保護層 725 薄膜電晶體
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Claims (1)

1289612 拾、申請專利範圍 1· -種在-製程反應室中一基 該方法包含： 成/專膜層的方法 ⑷在數種製程條件下，使該 、土 * 叹恭路於一以固定湳牽音 連續流動之製程氣體組合物—第一時間週期； 甘⑻在該第一時間週期後’將-前驅物脈衝至該處理室中 其中於該脈衝期間維持以固定流 貝負遷續流動之製程氣體 3物’且其中§亥前駆物在兮莖制
物在該41私條件下並不與該製程氣體組 物反應；接著 (C)以該固定流率持續實質 了貝貝貝逯、，，買/瓜動§亥製程氣體組合物一第 二時間週期； “（）在“第-時間週期I ’於該處理室中脈衝高頻電力以產 電水狀心、/、中於該脈衝高頻電力期間維持以該固定流率實質 連續流動言亥製程氣體組合物，I其中該前駆物與該製程氣體組合 物於該電漿狀態下會進行反應；以及
(e)重複步驟（a)、（b)、（C)及（d)直到達到該薄膜層的期望厚 度值，其中該薄膜層為氮化矽（shN4)、氧化矽（si〇)、二氧化矽 (Si02) 〇 2.如申請專利範圍第1項所述之方法，其中該製稃氟體银 合物係由氨氣（NH3)、聯氨（N2h4)、氮氣（n2)、氧氣（〇2)、臭氧 (〇3)、氫氣（HO、水蒸汽（h2〇)及其混合物所組成。 27 1289612 • 種在一製程反癉窒申 ^ ,c u ^ _ 馬至中一基板上形成一薄膜層之方法， 該方法至少包含： (a)在數種製程條件下# 1定孩I板暴路於一以固定流率實皙 連續流動之製程氣體組合 ^ _ 物一第一時間週期，其中該製程氣體組 a物為虱軋與氧氣的混合； 5第時間週期後’將一前驅物脈衝至該處理室中， 其中於該脈衝期問雜姓 門維持以固定流率實質連續流動之製程氣體組 合物’且其中該前驅物在允
初在该4製程條件下並不與該製程氣體組合 物反應；接著 ⑷以該固定流率持續實質連續流動該製程氣體組合物—第 二時間週期； ⑷在該第二時間週期後，於該處理室中脈衝高頻電力以產 生電襞狀態’其中於該脈衝高頻電力_維持以該固定流率實質 連續流動該製程氣體組合物，且其中該前驅物與該製程氣體= 物於該電漿狀態下會進行反應；以及
(e)重複步驟（a)、（b)、（〇及（(1)直到達到該薄膜層的期望厚 度值。 4. 一種在一製程反應室中一基板上形成一薄膜層之方法， 該方法至少包含： (a) 在數種製程條件下，使該基板暴露於一以固定流率實質 連續流動之製程氣體組合物一第一時間週期； (b) 在該第一時間週期後，將一前驅物脈衝至該處理室中， 28 1289612 ^中於該脈衝期間維持以固定流率實f連續流動之製程氣體組 。物且其中该前驅物在該等製程條件下並不與該製程氣體組合 物反應，且其中該前驅物為豳化矽化合物；接著 ()乂該固疋流率持續實質連續流動該製程氣體組合物一第 二時間週期； (d) 在該第二時間週期後，於該處理室中脈衝高頻電力以產 生電聚狀態，其中於該脈衝高頻電力期間維持以該固定流率實質 連續流動該製程氣體組合物，且其中該前驅物與該製程氣體組合 物於該電漿狀態下會進行反應；以及 (e) 重複步驟（a)、（b)、（c)及（d)直到達到該薄膜層的期望厚 度值。 5·如申請專利範圍帛4項所述之方法，其中該i化石夕化合 物為四氣化矽（S1CI4)、二氯矽烷（Si2Cl2H2)以及三氯矽烷 (SiCl3H)。 6· 一種在一製程反應室中一基板上形成一薄膜層之方法， 該方法至少包含： ⑷在數種製程條件下，使該基板暴露於一以固定流率實質 連續流動之製程氣體組合物一第一時間週期； (b)在d第時間週期後，將一前驅物脈衝至該處理室中， 其中於該脈衝期間維持以固定流率實質連續流動之製程氣體、组 - σ物’且其中”亥則驅物在該等製程條件下並不與該製程氣體組合 29 1289612 物反應，且其中該前驅物為矽氧烷化合物（Sil〇xane);接著 (C)以該固定流率持續實質連續流動該製程氣體組合物一第 二時間週期； (d) 在該第二時間週期後，於該處理室中脈衝高頻電力以產 生電聚狀悲，其中於該脈衝高頻電力期間維持以該固定流率實質 連續流動該製程氣體組合物，且其中該前驅物與該製程氣體組合 物於該電漿狀態下會進行反應；以及 (e) 重複步驟（a)、（b)、（c)及（d)直到達到該薄膜層的期望厚 度值。 7· —種在一製程反應室中一基板上形成一薄膜層之方法， 該方法至少包含： (a) 在數種製程條件下，使該基板暴露於一以固定流率實質 連續流動之製程氣體組合物一第一時間週期； (b) 在該第一時間週期後，將一前驅物脈衝至該處理室中， 其中於該脈衝期間維持以固定流率實質連續流動之製程氣體組 合物，且其中該前驅物在該等製程條件下並不與該製程氣體紐合 物反應，且其中該前驅物為矽烷（SiH4)或二矽烷（ShHd ;接著 (〇以該固定流率持續實質連續流動該製程氣體組合物一第 二時間週期； (d)在該第二時間週期後，於該處理室中脈衝高頻電力以產 生電漿狀態，其中於該脈衝高頻電力期間維持以該固定流率實質 連續流動該製程氣體組合物，且其中該前驅物與該製程氣體組合 30 1289612 物於該電聚狀態下會進行反應；以及 (e)重複步驟（a)、（b)、（c)及⑷直到達到該薄膜層的 度值。 予 〜8.如申請專利範圍第1項所述之方法，其中該高頻電力為 〜射頻電力。 … 9.如申請專利範圍第1項所述之方法，其中該射頻電力# 被供應至-喷灌頭。 I 〇·如申請專利範圍第9項所述之方法，其中該射頻電力係 破供應至一基板支撐平台。 II ·如申請專利範圍第9項所述之方法，其中該高頻電力係 介於約500瓦至2000瓦之間。 12 ·如申請專利範圍第n項所述之方法，其中該高頻電力 係八 ' ;丨於約750瓦至約175〇瓦之間。 1 3 ·如申請專利範圍第1 2項所述之方法，其中該高頻電力 丨於約900瓦至約12〇〇瓦之間。 14·如申請專利範圍第1項所述之方法，其中該基板溫度係 31 1289612 維持在小於50(rc。 15·如申請專利範圍第14頊所述之方法，其中該基板溫度 係維持在小於350。。。 1 6 ·如申請專利範圍第1項所述之方法，其中該製程反應室 t力係、、隹持在介於約10毫托（mini-t〇rr)至約丨〇托（torr)之間。 1 7.如申請專利範圍第16項所述之方法，其中該製程反應 至壓力係維持在介於約〇, 5托至約5托之間。 18. 如申請專利範圍第17項所述之方法，#中該製程反應 室壓力係維持在介於約1 〇托至約5托之間。 19. 如中請專利職第丨項所述之方法，其巾該製程氣體組 合物之流量係介於約2〇〇每秒標準立方公分（Sam)至約 3000seem 之間。 其中該前驅物之脈 其中該前驅物之 20.如申請專利範圍第1項所述之方法 衝具有約〇 · 5秒至約2秒之間的持續時間。 2 1 如申請專利範圍第2 0項所述之方法 脈衝具有約0.7秒至約丨秒之間的持續時間。 32 1289612 22·如申請專利範圍第1頊所述之方法，其中該脈衝一前驅 物進入製程反應室包含注入一次以上之前驅物。 23 ·如申請專利範圍第1頊所述之方法，其中該脈衝高頻電 、 力至少包含一射頻脈衝。 24.如申請專利範圍第23項所述之方法，其中該射頻之 、< 脈 ^ 衝持續約2秒至約} 〇秒間。 25·如申請專利範圍第24項所述之方法，其中該射頻之脈 衝持續約3秒至約5秒間。 26.如申請專利範圍第1項所述之方法，其中該脈衝高頻電 力至少包含脈衝一次以上之高頻電力。 27· —種在一製程反應室中以使用一前驅物之一循環沉積 製程來形成一薄膜層於一基板上的方法，該方法至少包含： (a) 使邊基板暴露於一以介於約500 seem至2000 seem間之 々《l率實質連續流動之氫氣與氧氣結合物中約〇 · 5秒至約1秒之第 一時間週期； (b) 在該第一時間週期後，以介於200sccm至500sccm之間 的/瓜率脈衝四氣化矽至該反應室中約0.5秒至約1秒，其中於該 33 1289612 脈衡期間維持實質連續流動氫氣及氧氣之結合物； 秒之第 U)持續實質流動氫氣及氧氣之結合物約1秒至約4 —時間週期； (d)在該第二時間週期後，以約5〇〇瓦至約 瓦脈衝射頻 力約2秒至6秒，其中於該脈衝射頻電力期間係維持實質連續 ’泉動氫氣及氧氣之結合物；以及 (匀重複步驟（a)、（b)、（〇、及（d)暴露、提供及脈衝步驟， 直到達到該薄膜層的期望厚度值。
28· —種在一製程反應室中一基板上形成一薄膜層之方 法，其至少包含： U)使該基板暴露於一以固定流率連續流動之一製程氣體組 合物一第一時間週期； (b)使該基板暴露於一前驅物以及以固定流率連續流動之該 製程氣體組合物一第二時間週期’其中該前驅物為含石夕前驅物;
(C)使該基板暴露於-以固定流率連續流動之該製程氣體組 合物一第三時間週期； 6⑷於-第四時間週期期間’施加高頻電力至該製程反應 室’藉以將該製程氣體組合物激發成一電漿態，其中該前驅物與 *亥製程氣體組合物反應形成—薄膜層於該基板上，且其中於該第 四時間週期期間維持以該固定流率連續流動該製程氣體組合 物；以及 ⑷重複步驟⑷、（b)、（c)、及(d)，直到達到該薄膜層的期 34 1289612 望厚度值。 29· —種在一製程反應室中一基板上形成一薄膜層之方 法，其至少包含： (a) 使該基板暴露於一以固定流率連續流動之一製程氣體組 合物一第一時間週期，其中該製程氣體組合物為氫氣及氧氣之結 合物； (b) 使該基板暴露於一前驅物以及以固定流率連續流動之該 製程氣體組合物一第二時間週期； (c) 使該基板暴露於一以固定流率連續流動之該製程氣體組 合物一第三時間週期； (d) 於一第四時間週期期間，施加高頻電力至該製程反應 室，藉以將該製程氣體組合物激發成一電漿態，其中該前驅物與 該製程氣體組合物反應形成一薄膜層於該基板上，且其中於該第 四時間週期期間維持以該固定流率連續流動該製程氣體組合 物；以及 (e) 重複步驟（a)、（b)、（c)、及（d)，直到達到該薄膜層的期 望厚度值。 30·如申請專利範圍第30項所述之方法，其中該含矽前驅 物為一齒化石夕化合物。 3 1.如申請專利範圍第30項所述之方法，其中暴露該基板 35 1289612 至一前驅物的步驟包括提供一該前驅物之脈衝。
36
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Families Citing this family (410)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7439191B2 (en) * 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US20030232501A1 (en) 2002-06-14 2003-12-18 Kher Shreyas S. Surface pre-treatment for enhancement of nucleation of high dielectric constant materials
US7011890B2 (en) * 2003-03-03 2006-03-14 Applied Materials Inc. Modulated/composited CVD low-k films with improved mechanical and electrical properties for nanoelectronic devices
US7199061B2 (en) * 2003-04-21 2007-04-03 Applied Materials, Inc. Pecvd silicon oxide thin film deposition
US7166528B2 (en) 2003-10-10 2007-01-23 Applied Materials, Inc. Methods of selective deposition of heavily doped epitaxial SiGe
US20050109276A1 (en) * 2003-11-25 2005-05-26 Applied Materials, Inc. Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US8323754B2 (en) 2004-05-21 2012-12-04 Applied Materials, Inc. Stabilization of high-k dielectric materials
US20060019032A1 (en) * 2004-07-23 2006-01-26 Yaxin Wang Low thermal budget silicon nitride formation for advance transistor fabrication
US7966969B2 (en) * 2004-09-22 2011-06-28 Asm International N.V. Deposition of TiN films in a batch reactor
US20060084283A1 (en) * 2004-10-20 2006-04-20 Paranjpe Ajit P Low temperature sin deposition methods
JP2006135229A (ja) * 2004-11-09 2006-05-25 Elpida Memory Inc 絶縁膜の成膜方法及びその絶縁膜を備えた半導体装置
US7682940B2 (en) * 2004-12-01 2010-03-23 Applied Materials, Inc. Use of Cl2 and/or HCl during silicon epitaxial film formation
US7235492B2 (en) 2005-01-31 2007-06-26 Applied Materials, Inc. Low temperature etchant for treatment of silicon-containing surfaces
US7651955B2 (en) 2005-06-21 2010-01-26 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US7648927B2 (en) 2005-06-21 2010-01-19 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US7780865B2 (en) * 2006-03-31 2010-08-24 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
US7601651B2 (en) * 2006-03-31 2009-10-13 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
US20070287301A1 (en) * 2006-03-31 2007-12-13 Huiwen Xu Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics
US7674337B2 (en) 2006-04-07 2010-03-09 Applied Materials, Inc. Gas manifolds for use during epitaxial film formation
US7798096B2 (en) 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
US7501355B2 (en) 2006-06-29 2009-03-10 Applied Materials, Inc. Decreasing the etch rate of silicon nitride by carbon addition
US7674662B2 (en) * 2006-07-19 2010-03-09 Applied Materials, Inc. Process for making thin film field effect transistors using zinc oxide
CN103981568A (zh) 2006-07-31 2014-08-13 应用材料公司 形成含碳外延硅层的方法
US8476125B2 (en) * 2006-12-15 2013-07-02 University Of South Carolina Fabrication technique for high frequency, high power group III nitride electronic devices
US8338273B2 (en) * 2006-12-15 2012-12-25 University Of South Carolina Pulsed selective area lateral epitaxy for growth of III-nitride materials over non-polar and semi-polar substrates
US20080254613A1 (en) * 2007-04-10 2008-10-16 Applied Materials, Inc. Methods for forming metal interconnect structure for thin film transistor applications
US7927713B2 (en) 2007-04-27 2011-04-19 Applied Materials, Inc. Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
WO2009117438A2 (en) 2008-03-20 2009-09-24 Applied Materials, Inc. Process to make metal oxide thin film transistor array with etch stopping layer
US7879698B2 (en) * 2008-03-24 2011-02-01 Applied Materials, Inc. Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor
US7659158B2 (en) 2008-03-31 2010-02-09 Applied Materials, Inc. Atomic layer deposition processes for non-volatile memory devices
US8258511B2 (en) 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US20100133094A1 (en) * 2008-12-02 2010-06-03 Applied Materials, Inc. Transparent conductive film with high transmittance formed by a reactive sputter deposition
US7833906B2 (en) 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition
US20100163406A1 (en) * 2008-12-30 2010-07-01 Applied Materials, Inc. Substrate support in a reactive sputter chamber
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US7988470B2 (en) 2009-09-24 2011-08-02 Applied Materials, Inc. Methods of fabricating metal oxide or metal oxynitride TFTs using wet process for source-drain metal etch
US8840763B2 (en) 2009-09-28 2014-09-23 Applied Materials, Inc. Methods for stable process in a reactive sputtering process using zinc or doped zinc target
KR20120045178A (ko) * 2010-10-29 2012-05-09 삼성전자주식회사 박막 트랜지스터 및 이의 제조 방법
US8465811B2 (en) * 2011-01-28 2013-06-18 Asm Japan K.K. Method of depositing film by atomic layer deposition with pulse-time-modulated plasma
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US9793148B2 (en) 2011-06-22 2017-10-17 Asm Japan K.K. Method for positioning wafers in multiple wafer transport
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9006802B2 (en) * 2011-08-18 2015-04-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device manufacturing methods and methods of forming insulating material layers
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US8946830B2 (en) 2012-04-04 2015-02-03 Asm Ip Holdings B.V. Metal oxide protective layer for a semiconductor device
US8796097B2 (en) 2012-04-26 2014-08-05 University Of South Carolina Selectively area regrown III-nitride high electron mobility transistor
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US9640416B2 (en) 2012-12-26 2017-05-02 Asm Ip Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US8993054B2 (en) 2013-07-12 2015-03-31 Asm Ip Holding B.V. Method and system to reduce outgassing in a reaction chamber
US9018111B2 (en) 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US9793115B2 (en) 2013-08-14 2017-10-17 Asm Ip Holding B.V. Structures and devices including germanium-tin films and methods of forming same
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US10179947B2 (en) 2013-11-26 2019-01-15 Asm Ip Holding B.V. Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
KR102300403B1 (ko) 2014-11-19 2021-09-09 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US9887277B2 (en) * 2015-01-23 2018-02-06 Applied Materials, Inc. Plasma treatment on metal-oxide TFT
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
TWI701357B (zh) * 2015-03-17 2020-08-11 美商應用材料股份有限公司 用於膜沉積的脈衝化電漿
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US9899291B2 (en) 2015-07-13 2018-02-20 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US10043661B2 (en) 2015-07-13 2018-08-07 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
US10087525B2 (en) 2015-08-04 2018-10-02 Asm Ip Holding B.V. Variable gap hard stop design
US9647114B2 (en) 2015-08-14 2017-05-09 Asm Ip Holding B.V. Methods of forming highly p-type doped germanium tin films and structures and devices including the films
US9711345B2 (en) 2015-08-25 2017-07-18 Asm Ip Holding B.V. Method for forming aluminum nitride-based film by PEALD
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US9909214B2 (en) 2015-10-15 2018-03-06 Asm Ip Holding B.V. Method for depositing dielectric film in trenches by PEALD
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9905420B2 (en) 2015-12-01 2018-02-27 Asm Ip Holding B.V. Methods of forming silicon germanium tin films and structures and devices including the films
US9607837B1 (en) 2015-12-21 2017-03-28 Asm Ip Holding B.V. Method for forming silicon oxide cap layer for solid state diffusion process
US9735024B2 (en) 2015-12-28 2017-08-15 Asm Ip Holding B.V. Method of atomic layer etching using functional group-containing fluorocarbon
US9627221B1 (en) 2015-12-28 2017-04-18 Asm Ip Holding B.V. Continuous process incorporating atomic layer etching
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US9754779B1 (en) 2016-02-19 2017-09-05 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
US10087522B2 (en) 2016-04-21 2018-10-02 Asm Ip Holding B.V. Deposition of metal borides
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9793135B1 (en) 2016-07-14 2017-10-17 ASM IP Holding B.V Method of cyclic dry etching using etchant film
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
KR102354490B1 (ko) 2016-07-27 2022-01-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10177025B2 (en) 2016-07-28 2019-01-08 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10090316B2 (en) 2016-09-01 2018-10-02 Asm Ip Holding B.V. 3D stacked multilayer semiconductor memory using doped select transistor channel
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US9916980B1 (en) 2016-12-15 2018-03-13 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
KR102700194B1 (ko) 2016-12-19 2024-08-28 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10103040B1 (en) 2017-03-31 2018-10-16 Asm Ip Holding B.V. Apparatus and method for manufacturing a semiconductor device
USD830981S1 (en) 2017-04-07 2018-10-16 Asm Ip Holding B.V. Susceptor for semiconductor substrate processing apparatus
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
US10236177B1 (en) 2017-08-22 2019-03-19 ASM IP Holding B.V.. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR102510397B1 (ko) * 2017-09-01 2023-03-16 삼성디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 디스플레이 장치
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10431689B2 (en) * 2017-11-07 2019-10-01 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Thin film transistor and display device
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
WO2019103610A1 (en) 2017-11-27 2019-05-31 Asm Ip Holding B.V. Apparatus including a clean mini environment
JP7214724B2 (ja) 2017-11-27 2023-01-30 エーエスエム アイピー ホールディング ビー．ブイ． バッチ炉で利用されるウェハカセットを収納するための収納装置
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10727075B2 (en) * 2017-12-22 2020-07-28 Applied Materials, Inc. Uniform EUV photoresist patterning utilizing pulsed plasma process
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
JP7124098B2 (ja) 2018-02-14 2022-08-23 エーエスエム・アイピー・ホールディング・ベー・フェー 周期的堆積プロセスにより基材上にルテニウム含有膜を堆積させる方法
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
SG11202008268RA (en) 2018-03-19 2020-10-29 Applied Materials Inc Methods for depositing coatings on aerospace components
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
WO2019209401A1 (en) 2018-04-27 2019-10-31 Applied Materials, Inc. Protection of components from corrosion
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
TWI843623B (zh) 2018-05-08 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
KR20190129718A (ko) 2018-05-11 2019-11-20 에이에스엠 아이피 홀딩 비.브이. 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
TWI840362B (zh) 2018-06-04 2024-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 水氣降低的晶圓處置腔室
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
TW202409324A (zh) 2018-06-27 2024-03-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料之循環沉積製程
KR102686758B1 (ko) 2018-06-29 2024-07-18 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US11521849B2 (en) * 2018-07-20 2022-12-06 Applied Materials, Inc. In-situ deposition process
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11009339B2 (en) 2018-08-23 2021-05-18 Applied Materials, Inc. Measurement of thickness of thermal barrier coatings using 3D imaging and surface subtraction methods for objects with complex geometries
KR102707956B1 (ko) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
TWI844567B (zh) 2018-10-01 2024-06-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材保持裝置、含有此裝置之系統及其使用之方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
US11145504B2 (en) 2019-01-14 2021-10-12 Applied Materials, Inc. Method of forming film stacks with reduced defects
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
JP2020136678A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための方法および装置
TWI845607B (zh) 2019-02-20 2024-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
KR20200102357A (ko) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
TWI842826B (zh) 2019-02-22 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
KR20200116033A (ko) 2019-03-28 2020-10-08 에이에스엠 아이피 홀딩 비.브이. 도어 개방기 및 이를 구비한 기판 처리 장치
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
KR20200123380A (ko) 2019-04-19 2020-10-29 에이에스엠 아이피 홀딩 비.브이. 층 형성 방법 및 장치
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
EP3959356A4 (en) 2019-04-26 2023-01-18 Applied Materials, Inc. METHODS FOR PROTECTING AEROSPACE ELEMENTS AGAINST CORROSION AND OXIDATION
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
US11794382B2 (en) 2019-05-16 2023-10-24 Applied Materials, Inc. Methods for depositing anti-coking protective coatings on aerospace components
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 가스 감지기를 포함하는 기상 반응기 시스템
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
US11697879B2 (en) 2019-06-14 2023-07-11 Applied Materials, Inc. Methods for depositing sacrificial coatings on aerospace components
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
KR20210010817A (ko) 2019-07-19 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법
TWI839544B (zh) 2019-07-19 2024-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成形貌受控的非晶碳聚合物膜之方法
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
CN118422165A (zh) 2019-08-05 2024-08-02 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
KR20210028093A (ko) * 2019-08-29 2021-03-11 에이에스엠 아이피 홀딩 비.브이. 유전체 층을 포함하는 구조체 및 이를 형성하는 방법
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11466364B2 (en) 2019-09-06 2022-10-11 Applied Materials, Inc. Methods for forming protective coatings containing crystallized aluminum oxide
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TWI846953B (zh) 2019-10-08 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理裝置
KR20210042810A (ko) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP7527928B2 (ja) 2019-12-02 2024-08-05 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
TW202125596A (zh) 2019-12-17 2021-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成氮化釩層之方法以及包括該氮化釩層之結構
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
KR20210089079A (ko) 2020-01-06 2021-07-15 에이에스엠 아이피 홀딩 비.브이. 채널형 리프트 핀
TW202140135A (zh) 2020-01-06 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體供應總成以及閥板總成
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
TW202146882A (zh) 2020-02-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 專用於零件清潔的系統
KR20210116249A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
CN113394086A (zh) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 用于制造具有目标拓扑轮廓的层结构的方法
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
KR20210128343A (ko) 2020-04-15 2021-10-26 에이에스엠 아이피 홀딩 비.브이. 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
JP2021172884A (ja) 2020-04-24 2021-11-01 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化バナジウム含有層を形成する方法および窒化バナジウム含有層を含む構造体
TW202146831A (zh) 2020-04-24 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
TW202147543A (zh) 2020-05-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體處理系統
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
TW202146699A (zh) 2020-05-15 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統
KR20210143653A (ko) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
US11519066B2 (en) 2020-05-21 2022-12-06 Applied Materials, Inc. Nitride protective coatings on aerospace components and methods for making the same
KR102702526B1 (ko) 2020-05-22 2024-09-03 에이에스엠 아이피 홀딩 비.브이. 과산화수소를 사용하여 박막을 증착하기 위한 장치
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202212620A (zh) 2020-06-02 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
WO2022005696A1 (en) 2020-07-03 2022-01-06 Applied Materials, Inc. Methods for refurbishing aerospace components
KR102707957B1 (ko) 2020-07-08 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
TW202219628A (zh) 2020-07-17 2022-05-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於光微影之結構與方法
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
KR20220027026A (ko) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템
TW202229601A (zh) 2020-08-27 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成圖案化結構的方法、操控機械特性的方法、裝置結構、及基板處理系統
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
KR20220045900A (ko) 2020-10-06 2022-04-13 에이에스엠 아이피 홀딩 비.브이. 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치
CN114293174A (zh) 2020-10-07 2022-04-08 Asm Ip私人控股有限公司 气体供应单元和包括气体供应单元的衬底处理设备
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
KR20220053482A (ko) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202235649A (zh) 2020-11-24 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充間隙之方法與相關之系統及裝置
TW202235675A (zh) 2020-11-30 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 注入器、及基板處理設備
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Family Cites Families (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5898917A (ja) 1981-12-09 1983-06-13 Seiko Epson Corp 原子層エビタキシヤル装置
US5294286A (en) 1984-07-26 1994-03-15 Research Development Corporation Of Japan Process for forming a thin film of silicon
US5693139A (en) 1984-07-26 1997-12-02 Research Development Corporation Of Japan Growth of doped semiconductor monolayers
JPS62171999A (ja) 1986-01-27 1987-07-28 Nippon Telegr & Teleph Corp <Ntt> ３−ｖ族化合物半導体のエピタキシヤル結晶成長方法
JPS6362313A (ja) 1986-09-03 1988-03-18 Fujitsu Ltd 半導体装置の製造方法
JPH0639357B2 (ja) 1986-09-08 1994-05-25 新技術開発事業団 元素半導体単結晶薄膜の成長方法
US5000113A (en) 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
EP0299249A1 (en) 1987-07-16 1989-01-18 Texas Instruments Incorporated Processing apparatus and method
JPH01143221A (ja) 1987-11-27 1989-06-05 Nec Corp 絶縁薄膜の製造方法
JPH01270593A (ja) 1988-04-21 1989-10-27 Fujitsu Ltd 化合物半導体層形成方法
JPH02172895A (ja) 1988-12-22 1990-07-04 Nec Corp 半導体の結晶成長方法
EP0413982B1 (en) 1989-07-27 1997-05-14 Junichi Nishizawa Impurity doping method with adsorbed diffusion source
CA2031253A1 (en) 1989-12-01 1991-06-02 Kenji Aoki Method of producing bipolar transistor
JPH03286522A (ja) 1990-04-03 1991-12-17 Nec Corp Ｓｉの結晶成長方法
JP2764472B2 (ja) 1991-03-25 1998-06-11 東京エレクトロン株式会社 半導体の成膜方法
JPH0547665A (ja) 1991-08-12 1993-02-26 Fujitsu Ltd 気相成長方法
JP2828152B2 (ja) 1991-08-13 1998-11-25 富士通 株式会社 薄膜形成方法、多層構造膜及びシリコン薄膜トランジスタの形成方法
JPH05251339A (ja) 1991-08-14 1993-09-28 Fujitsu Ltd 半導体基板およびその製造方法
US5480818A (en) 1992-02-10 1996-01-02 Fujitsu Limited Method for forming a film and method for manufacturing a thin film transistor
DE4220282A1 (de) 1992-06-20 1993-12-23 Philips Patentverwaltung Verfahren für die periphere Angiographie und Anordnung zur Durchführung des Verfahrens
US5504040A (en) * 1992-06-30 1996-04-02 Texas Instruments Incorporated Planarized material layer deposition using condensed-phase processing
JPH0750690B2 (ja) 1992-08-21 1995-05-31 日本電気株式会社 ハロゲン化物を用いる半導体結晶のエピタキシャル成長方法とその装置
JP2726209B2 (ja) 1992-12-22 1998-03-11 三菱電機株式会社 半導体光デバイス及びその製造方法
JP3265042B2 (ja) 1993-03-18 2002-03-11 東京エレクトロン株式会社 成膜方法
US5437570A (en) * 1993-04-02 1995-08-01 Almi Machinefabriek Bv Apparatus for making cutouts in the ends of tubular workpieces
JPH0729897A (ja) 1993-06-25 1995-01-31 Nec Corp 半導体装置の製造方法
US5372860A (en) 1993-07-06 1994-12-13 Corning Incorporated Silicon device production
JPH07109573A (ja) 1993-10-12 1995-04-25 Semiconductor Energy Lab Co Ltd ガラス基板および加熱処理方法
US5796116A (en) 1994-07-27 1998-08-18 Sharp Kabushiki Kaisha Thin-film semiconductor device including a semiconductor film with high field-effect mobility
JP3286522B2 (ja) 1996-03-14 2002-05-27 日立ビアメカニクス株式会社 プリント基板加工装置
US6342277B1 (en) 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US5916365A (en) 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
US5923056A (en) 1996-10-10 1999-07-13 Lucent Technologies Inc. Electronic components with doped metal oxide dielectric materials and a process for making electronic components with doped metal oxide dielectric materials
US5807792A (en) 1996-12-18 1998-09-15 Siemens Aktiengesellschaft Uniform distribution of reactants in a device layer
US6287965B1 (en) 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
KR100385946B1 (ko) 1999-12-08 2003-06-02 삼성전자주식회사 원자층 증착법을 이용한 금속층 형성방법 및 그 금속층을장벽금속층, 커패시터의 상부전극, 또는 하부전극으로구비한 반도체 소자
KR100269306B1 (ko) 1997-07-31 2000-10-16 윤종용 저온처리로안정화되는금속산화막으로구성된완충막을구비하는집적회로장치및그제조방법
KR100261017B1 (ko) 1997-08-19 2000-08-01 윤종용 반도체 장치의 금속 배선층을 형성하는 방법
KR100269328B1 (ko) 1997-12-31 2000-10-16 윤종용 원자층 증착 공정을 이용하는 도전층 형성방법
TW439151B (en) 1997-12-31 2001-06-07 Samsung Electronics Co Ltd Method for forming conductive layer using atomic layer deposition process
US6383955B1 (en) 1998-02-05 2002-05-07 Asm Japan K.K. Silicone polymer insulation film on semiconductor substrate and method for forming the film
TW437017B (en) 1998-02-05 2001-05-28 Asm Japan Kk Silicone polymer insulation film on semiconductor substrate and method for formation thereof
US6514880B2 (en) 1998-02-05 2003-02-04 Asm Japan K.K. Siloxan polymer film on semiconductor substrate and method for forming same
DE69923436T2 (de) 1998-03-06 2006-01-05 Asm America Inc., Phoenix Verfahren zum beschichten von silizium mit hoher kantenabdeckung
JP4214585B2 (ja) 1998-04-24 2009-01-28 富士ゼロックス株式会社 半導体デバイス、半導体デバイスの製造方法及び製造装置
US6025627A (en) 1998-05-29 2000-02-15 Micron Technology, Inc. Alternate method and structure for improved floating gate tunneling devices
JP3899733B2 (ja) 1998-07-03 2007-03-28 株式会社豊田中央研究所 多孔材料及び多孔材料の製造方法
KR100275738B1 (ko) 1998-08-07 2000-12-15 윤종용 원자층 증착법을 이용한 박막 제조방법
KR100287180B1 (ko) 1998-09-17 2001-04-16 윤종용 계면 조절층을 이용하여 금속 배선층을 형성하는 반도체 소자의 제조 방법
KR100327328B1 (ko) 1998-10-13 2002-05-09 윤종용 부분적으로다른두께를갖는커패시터의유전막형성방버뵤
US20020031562A1 (en) 1999-02-26 2002-03-14 Ribnicky David M. Recovery of gaultherin from plants
US6305314B1 (en) 1999-03-11 2001-10-23 Genvs, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
US6200893B1 (en) 1999-03-11 2001-03-13 Genus, Inc Radical-assisted sequential CVD
US6124158A (en) 1999-06-08 2000-09-26 Lucent Technologies Inc. Method of reducing carbon contamination of a thin dielectric film by using gaseous organic precursors, inert gas, and ozone to react with carbon contaminants
KR20010017820A (ko) 1999-08-14 2001-03-05 윤종용 반도체 소자 및 그 제조방법
US6391785B1 (en) 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
US6511539B1 (en) 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
DE10049257B4 (de) 1999-10-06 2015-05-13 Samsung Electronics Co., Ltd. Verfahren zur Dünnfilmerzeugung mittels atomarer Schichtdeposition
FI117942B (fi) 1999-10-14 2007-04-30 Asm Int Menetelmä oksidiohutkalvojen kasvattamiseksi
US6203613B1 (en) 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
TW468212B (en) 1999-10-25 2001-12-11 Motorola Inc Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6780704B1 (en) 1999-12-03 2004-08-24 Asm International Nv Conformal thin films over textured capacitor electrodes
US6348420B1 (en) 1999-12-23 2002-02-19 Asm America, Inc. Situ dielectric stacks
EP1123991A3 (en) 2000-02-08 2002-11-13 Asm Japan K.K. Low dielectric constant materials and processes
US6492283B2 (en) 2000-02-22 2002-12-10 Asm Microchemistry Oy Method of forming ultrathin oxide layer
AU2001245388A1 (en) 2000-03-07 2001-09-17 Asm America, Inc. Graded thin films
US6984591B1 (en) 2000-04-20 2006-01-10 International Business Machines Corporation Precursor source mixtures
KR100363088B1 (ko) 2000-04-20 2002-12-02 삼성전자 주식회사 원자층 증착방법을 이용한 장벽 금속막의 제조방법
US6630413B2 (en) 2000-04-28 2003-10-07 Asm Japan K.K. CVD syntheses of silicon nitride materials
US6458718B1 (en) 2000-04-28 2002-10-01 Asm Japan K.K. Fluorine-containing materials and processes
KR100378186B1 (ko) 2000-10-19 2003-03-29 삼성전자주식회사 원자층 증착법으로 형성된 박막이 채용된 반도체 소자 및그 제조방법
US6613695B2 (en) 2000-11-24 2003-09-02 Asm America, Inc. Surface preparation prior to deposition
WO2002045167A2 (en) 2000-11-30 2002-06-06 Asm International N.V. Thin films for magnetic devices
WO2002045871A1 (en) * 2000-12-06 2002-06-13 Angstron Systems, Inc. System and method for modulated ion-induced atomic layer deposition (mii-ald)
KR100385947B1 (ko) 2000-12-06 2003-06-02 삼성전자주식회사 원자층 증착 방법에 의한 박막 형성 방법
US6416822B1 (en) * 2000-12-06 2002-07-09 Angstrom Systems, Inc. Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
KR20020049875A (ko) 2000-12-20 2002-06-26 윤종용 반도체 메모리 소자의 강유전체 커패시터 및 그 제조방법
KR100393208B1 (ko) 2001-01-15 2003-07-31 삼성전자주식회사 도핑된 다결정 실리콘-저매니움막을 이용한 반도체 소자및 그 제조방법
US7026219B2 (en) 2001-02-12 2006-04-11 Asm America, Inc. Integration of high k gate dielectric
EP1421607A2 (en) 2001-02-12 2004-05-26 ASM America, Inc. Improved process for deposition of semiconductor films
KR20040008193A (ko) 2001-05-30 2004-01-28 에이에스엠 아메리카, 인코포레이티드 저온 로딩 및 소성
US6828218B2 (en) 2001-05-31 2004-12-07 Samsung Electronics Co., Ltd. Method of forming a thin film using atomic layer deposition
US6391803B1 (en) 2001-06-20 2002-05-21 Samsung Electronics Co., Ltd. Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane
US6861334B2 (en) 2001-06-21 2005-03-01 Asm International, N.V. Method of fabricating trench isolation structures for integrated circuits using atomic layer deposition
US6806145B2 (en) 2001-08-31 2004-10-19 Asm International, N.V. Low temperature method of forming a gate stack with a high k layer deposited over an interfacial oxide layer
US6960537B2 (en) 2001-10-02 2005-11-01 Asm America, Inc. Incorporation of nitrogen into high k dielectric film
DE10150258A1 (de) * 2001-10-11 2003-04-17 Degussa Leitungssystem für Fluide und Gase in einer Brennstoffzelle
US6998014B2 (en) * 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers

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