SG189557A1 - Cleanup method for optics in immersion lithography - Google Patents
Cleanup method for optics in immersion lithography Download PDFInfo
- Publication number
- SG189557A1 SG189557A1 SG2009027129A SG2009027129A SG189557A1 SG 189557 A1 SG189557 A1 SG 189557A1 SG 2009027129 A SG2009027129 A SG 2009027129A SG 2009027129 A SG2009027129 A SG 2009027129A SG 189557 A1 SG189557 A1 SG 189557A1
- Authority
- SG
- Singapore
- Prior art keywords
- cleanup
- optical element
- liquid
- workpiece
- immersion
- Prior art date
Links
- 239000007788 liquid Substances 0.000 claims abstract description 94
- 230000003287 optical effect Effects 0.000 claims abstract description 90
- 238000000034 method Methods 0.000 claims abstract description 82
- 238000004140 cleaning Methods 0.000 claims abstract description 61
- 230000008569 process Effects 0.000 claims abstract description 42
- 238000000671 immersion lithography Methods 0.000 claims abstract description 33
- 238000007654 immersion Methods 0.000 claims abstract description 31
- 238000001459 lithography Methods 0.000 claims abstract description 8
- 238000011084 recovery Methods 0.000 claims description 12
- 230000000717 retained effect Effects 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000005286 illumination Methods 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 36
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000012805 post-processing Methods 0.000 description 3
- 238000007781 pre-processing Methods 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 230000002925 chemical effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000033001 locomotion Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
Landscapes
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Plasma & Fusion (AREA)
- Toxicology (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning In General (AREA)
- Cleaning By Liquid Or Steam (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US46255603P | 2003-04-11 | 2003-04-11 | |
| US48291303P | 2003-06-27 | 2003-06-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG189557A1 true SG189557A1 (en) | 2013-05-31 |
Family
ID=33303091
Family Applications (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201803122UA SG10201803122UA (en) | 2003-04-11 | 2004-04-02 | Immersion lithography apparatus and device manufacturing method |
| SG2014015135A SG2014015135A (en) | 2003-04-11 | 2004-04-02 | Cleanup method for optics in immersion lithography |
| SG2009027137A SG185136A1 (en) | 2003-04-11 | 2004-04-02 | Cleanup method for optics in immersion lithography |
| SG2013077797A SG2013077797A (en) | 2003-04-11 | 2004-04-02 | Cleanup method for optics in immersion lithography |
| SG2009027129A SG189557A1 (en) | 2003-04-11 | 2004-04-02 | Cleanup method for optics in immersion lithography |
Family Applications Before (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201803122UA SG10201803122UA (en) | 2003-04-11 | 2004-04-02 | Immersion lithography apparatus and device manufacturing method |
| SG2014015135A SG2014015135A (en) | 2003-04-11 | 2004-04-02 | Cleanup method for optics in immersion lithography |
| SG2009027137A SG185136A1 (en) | 2003-04-11 | 2004-04-02 | Cleanup method for optics in immersion lithography |
| SG2013077797A SG2013077797A (en) | 2003-04-11 | 2004-04-02 | Cleanup method for optics in immersion lithography |
Country Status (9)
| Country | Link |
|---|---|
| US (10) | US7522259B2 (enExample) |
| EP (6) | EP2161621B1 (enExample) |
| JP (10) | JP4837556B2 (enExample) |
| KR (11) | KR101525335B1 (enExample) |
| CN (4) | CN101825847B (enExample) |
| AT (1) | ATE449982T1 (enExample) |
| DE (1) | DE602004024295D1 (enExample) |
| SG (5) | SG10201803122UA (enExample) |
| WO (1) | WO2004093130A2 (enExample) |
Families Citing this family (227)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7372541B2 (en) | 2002-11-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| TWI232357B (en) | 2002-11-12 | 2005-05-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| JP3953460B2 (ja) | 2002-11-12 | 2007-08-08 | エーエスエムエル ネザーランズ ビー．ブイ． | リソグラフィ投影装置 |
| EP1420299B1 (en) * | 2002-11-12 | 2011-01-05 | ASML Netherlands B.V. | Immersion lithographic apparatus and device manufacturing method |
| DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
| US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| US7242455B2 (en) | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
| CN1723541B (zh) | 2002-12-10 | 2010-06-02 | 株式会社尼康 | 曝光装置和器件制造方法 |
| CN101424883B (zh) | 2002-12-10 | 2013-05-15 | 株式会社尼康 | 曝光设备和器件制造法 |
| KR101085372B1 (ko) | 2002-12-10 | 2011-11-21 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| US7948604B2 (en) | 2002-12-10 | 2011-05-24 | Nikon Corporation | Exposure apparatus and method for producing device |
| WO2004053956A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及び露光方法、デバイス製造方法 |
| DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
| KR101921572B1 (ko) | 2003-02-26 | 2018-11-26 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| EP1610361B1 (en) | 2003-03-25 | 2014-05-21 | Nikon Corporation | Exposure system and device production method |
| WO2004090956A1 (ja) | 2003-04-07 | 2004-10-21 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| WO2004093159A2 (en) | 2003-04-09 | 2004-10-28 | Nikon Corporation | Immersion lithography fluid control system |
| EP3352010A1 (en) | 2003-04-10 | 2018-07-25 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
| KR101745223B1 (ko) | 2003-04-10 | 2017-06-08 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
| SG2014015176A (en) | 2003-04-10 | 2015-06-29 | Nippon Kogaku Kk | Environmental system including vacuum scavange for an immersion lithography apparatus |
| CN101825847B (zh) * | 2003-04-11 | 2013-10-16 | 株式会社尼康 | 用于沉浸式光刻光学系统的清洗方法 |
| WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
| SG2012031738A (en) | 2003-04-11 | 2015-07-30 | Nippon Kogaku Kk | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
| JP2006523958A (ja) | 2003-04-17 | 2006-10-19 | 株式会社ニコン | 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造 |
| TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| KR20060009356A (ko) | 2003-05-15 | 2006-01-31 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| TWI612556B (zh) * | 2003-05-23 | 2018-01-21 | Nikon Corp | 曝光裝置、曝光方法及元件製造方法 |
| TWI470671B (zh) | 2003-05-23 | 2015-01-21 | 尼康股份有限公司 | Exposure method and exposure apparatus, and device manufacturing method |
| EP2453465A3 (en) | 2003-05-28 | 2018-01-03 | Nikon Corporation | Exposure method, exposure apparatus, and method for producing a device |
| US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1486827B1 (en) | 2003-06-11 | 2011-11-02 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7317504B2 (en) | 2004-04-08 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR101528089B1 (ko) | 2003-06-13 | 2015-06-11 | 가부시키가이샤 니콘 | 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법 |
| US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
| KR101931923B1 (ko) | 2003-06-19 | 2018-12-21 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조방법 |
| EP1491956B1 (en) | 2003-06-27 | 2006-09-06 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
| KR20060027832A (ko) | 2003-07-01 | 2006-03-28 | 가부시키가이샤 니콘 | 광학 엘리먼트로서 동위원소적으로 특정된 유체를 사용하는방법 |
| EP2843472B1 (en) | 2003-07-08 | 2016-12-07 | Nikon Corporation | Wafer table for immersion lithography |
| KR20060026883A (ko) | 2003-07-09 | 2006-03-24 | 가부시키가이샤 니콘 | 결합장치, 노광장치 및 디바이스 제조방법 |
| KR101296501B1 (ko) | 2003-07-09 | 2013-08-13 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| EP2264531B1 (en) | 2003-07-09 | 2013-01-16 | Nikon Corporation | Exposure apparatus and device manufacturing method |
| EP1650787A4 (en) | 2003-07-25 | 2007-09-19 | Nikon Corp | INVESTIGATION METHOD AND INVESTIGATION DEVICE FOR AN OPTICAL PROJECTION SYSTEM AND METHOD OF MANUFACTURING AN OPTICAL PROJECTION SYSTEM |
| KR101935709B1 (ko) | 2003-07-28 | 2019-01-04 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법 |
| US7326522B2 (en) | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
| US7175968B2 (en) | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
| EP1503244A1 (en) | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
| US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7370659B2 (en) * | 2003-08-06 | 2008-05-13 | Micron Technology, Inc. | Photolithographic stepper and/or scanner machines including cleaning devices and methods of cleaning photolithographic stepper and/or scanner machines |
| KR101242886B1 (ko) | 2003-08-29 | 2013-03-12 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| KR20170070264A (ko) | 2003-09-03 | 2017-06-21 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
| JP4444920B2 (ja) | 2003-09-19 | 2010-03-31 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| KR101248325B1 (ko) | 2003-09-26 | 2013-03-27 | 가부시키가이샤 니콘 | 투영노광장치 및 투영노광장치의 세정방법, 메인터넌스방법 그리고 디바이스의 제조방법 |
| EP2312395B1 (en) | 2003-09-29 | 2015-05-13 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing a device |
| KR101361892B1 (ko) | 2003-10-08 | 2014-02-12 | 가부시키가이샤 자오 니콘 | 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광 방법, 디바이스 제조 방법 |
| EP1672682A4 (en) | 2003-10-08 | 2008-10-15 | Zao Nikon Co Ltd | SUBSTRATE TRANSPORT DEVICE AND METHOD, EXPOSURE DEVICE AND METHOD AND COMPONENT MANUFACTURING METHOD |
| JP2005136364A (ja) | 2003-10-08 | 2005-05-26 | Zao Nikon Co Ltd | 基板搬送装置、露光装置、並びにデバイス製造方法 |
| TW201738932A (zh) | 2003-10-09 | 2017-11-01 | Nippon Kogaku Kk | 曝光裝置及曝光方法、元件製造方法 |
| US7411653B2 (en) | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
| US7352433B2 (en) | 2003-10-28 | 2008-04-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1531362A3 (en) * | 2003-11-13 | 2007-07-25 | Matsushita Electric Industrial Co., Ltd. | Semiconductor manufacturing apparatus and pattern formation method |
| JP4295712B2 (ja) | 2003-11-14 | 2009-07-15 | エーエスエムエル ネザーランズ ビー．ブイ． | リソグラフィ装置及び装置製造方法 |
| TW201804262A (zh) | 2003-12-03 | 2018-02-01 | 尼康股份有限公司 | 曝光裝置、曝光方法、元件製造方法 |
| KR101281397B1 (ko) | 2003-12-15 | 2013-07-02 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
| JP4308638B2 (ja) | 2003-12-17 | 2009-08-05 | パナソニック株式会社 | パターン形成方法 |
| US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4371822B2 (ja) * | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
| WO2005071491A2 (en) | 2004-01-20 | 2005-08-04 | Carl Zeiss Smt Ag | Exposure apparatus and measuring device for a projection lens |
| US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
| JP4506674B2 (ja) | 2004-02-03 | 2010-07-21 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2005076323A1 (ja) * | 2004-02-10 | 2005-08-18 | Nikon Corporation | 露光装置及びデバイス製造方法、メンテナンス方法及び露光方法 |
| US20050205108A1 (en) * | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
| KR20180042456A (ko) | 2004-03-25 | 2018-04-25 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| US7034917B2 (en) | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
| US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2005111722A2 (en) | 2004-05-04 | 2005-11-24 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
| US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7796274B2 (en) | 2004-06-04 | 2010-09-14 | Carl Zeiss Smt Ag | System for measuring the image quality of an optical imaging system |
| KR101162128B1 (ko) * | 2004-06-09 | 2012-07-03 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| US8698998B2 (en) | 2004-06-21 | 2014-04-15 | Nikon Corporation | Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device |
| KR101245070B1 (ko) * | 2004-06-21 | 2013-03-18 | 가부시키가이샤 니콘 | 노광 장치 및 그 부재의 세정 방법, 노광 장치의 메인터넌스 방법, 메인터넌스 기기, 그리고 디바이스 제조 방법 |
| JP4677833B2 (ja) * | 2004-06-21 | 2011-04-27 | 株式会社ニコン | 露光装置、及びその部材の洗浄方法、露光装置のメンテナンス方法、メンテナンス機器、並びにデバイス製造方法 |
| US20060001851A1 (en) | 2004-07-01 | 2006-01-05 | Grant Robert B | Immersion photolithography system |
| US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2006006565A1 (ja) | 2004-07-12 | 2006-01-19 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| JP2006032750A (ja) * | 2004-07-20 | 2006-02-02 | Canon Inc | 液浸型投影露光装置、及びデバイス製造方法 |
| US7224427B2 (en) | 2004-08-03 | 2007-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Megasonic immersion lithography exposure apparatus and method |
| JP4983257B2 (ja) | 2004-08-18 | 2012-07-25 | 株式会社ニコン | 露光装置、デバイス製造方法、計測部材、及び計測方法 |
| US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4772306B2 (ja) | 2004-09-06 | 2011-09-14 | 株式会社東芝 | 液浸光学装置及び洗浄方法 |
| US7385670B2 (en) * | 2004-10-05 | 2008-06-10 | Asml Netherlands B.V. | Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus |
| JP4665712B2 (ja) | 2004-10-26 | 2011-04-06 | 株式会社ニコン | 基板処理方法、露光装置及びデバイス製造方法 |
| US7414699B2 (en) * | 2004-11-12 | 2008-08-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7411657B2 (en) | 2004-11-17 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2006054719A1 (ja) | 2004-11-19 | 2006-05-26 | Nikon Corporation | メンテナンス方法、露光方法、露光装置及びデバイス製造方法 |
| US7732123B2 (en) * | 2004-11-23 | 2010-06-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion photolithography with megasonic rinse |
| US7446850B2 (en) | 2004-12-03 | 2008-11-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2006062065A1 (ja) * | 2004-12-06 | 2006-06-15 | Nikon Corporation | メンテナンス方法、メンテナンス機器、露光装置、及びデバイス製造方法 |
| US7397533B2 (en) | 2004-12-07 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7196770B2 (en) | 2004-12-07 | 2007-03-27 | Asml Netherlands B.V. | Prewetting of substrate before immersion exposure |
| US7365827B2 (en) | 2004-12-08 | 2008-04-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7352440B2 (en) | 2004-12-10 | 2008-04-01 | Asml Netherlands B.V. | Substrate placement in immersion lithography |
| US7403261B2 (en) | 2004-12-15 | 2008-07-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7528931B2 (en) | 2004-12-20 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7880860B2 (en) | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7405805B2 (en) | 2004-12-28 | 2008-07-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7491661B2 (en) | 2004-12-28 | 2009-02-17 | Asml Netherlands B.V. | Device manufacturing method, top coat material and substrate |
| US7450217B2 (en) | 2005-01-12 | 2008-11-11 | Asml Netherlands B.V. | Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby |
| DE602006012746D1 (de) | 2005-01-14 | 2010-04-22 | Asml Netherlands Bv | Lithografische Vorrichtung und Herstellungsverfahren |
| KR20160135859A (ko) | 2005-01-31 | 2016-11-28 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| US8692973B2 (en) | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
| CN102385260B (zh) | 2005-02-10 | 2014-11-05 | Asml荷兰有限公司 | 浸没液体、曝光装置及曝光方法 |
| US7378025B2 (en) | 2005-02-22 | 2008-05-27 | Asml Netherlands B.V. | Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method |
| US7224431B2 (en) | 2005-02-22 | 2007-05-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8018573B2 (en) | 2005-02-22 | 2011-09-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7428038B2 (en) | 2005-02-28 | 2008-09-23 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid |
| US7282701B2 (en) | 2005-02-28 | 2007-10-16 | Asml Netherlands B.V. | Sensor for use in a lithographic apparatus |
| US7324185B2 (en) | 2005-03-04 | 2008-01-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4072543B2 (ja) | 2005-03-18 | 2008-04-09 | キヤノン株式会社 | 液浸露光装置及びデバイス製造方法 |
| US7330238B2 (en) | 2005-03-28 | 2008-02-12 | Asml Netherlands, B.V. | Lithographic apparatus, immersion projection apparatus and device manufacturing method |
| US7411654B2 (en) | 2005-04-05 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7291850B2 (en) | 2005-04-08 | 2007-11-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
| US20060232753A1 (en) | 2005-04-19 | 2006-10-19 | Asml Holding N.V. | Liquid immersion lithography system with tilted liquid flow |
| US7317507B2 (en) | 2005-05-03 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7433016B2 (en) | 2005-05-03 | 2008-10-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8248577B2 (en) | 2005-05-03 | 2012-08-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20060250588A1 (en) * | 2005-05-03 | 2006-11-09 | Stefan Brandl | Immersion exposure tool cleaning system and method |
| US7652746B2 (en) | 2005-06-21 | 2010-01-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR20080018158A (ko) * | 2005-06-21 | 2008-02-27 | 가부시키가이샤 니콘 | 노광 장치 및 노광 방법, 메인터넌스 방법과 디바이스 제조방법 |
| US7834974B2 (en) | 2005-06-28 | 2010-11-16 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7468779B2 (en) | 2005-06-28 | 2008-12-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7474379B2 (en) | 2005-06-28 | 2009-01-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP5194792B2 (ja) | 2005-06-30 | 2013-05-08 | 株式会社ニコン | 露光装置及び方法、露光装置のメンテナンス方法、並びにデバイス製造方法 |
| US7262422B2 (en) * | 2005-07-01 | 2007-08-28 | Spansion Llc | Use of supercritical fluid to dry wafer and clean lens in immersion lithography |
| US7583358B2 (en) * | 2005-07-25 | 2009-09-01 | Micron Technology, Inc. | Systems and methods for retrieving residual liquid during immersion lens photolithography |
| US8054445B2 (en) | 2005-08-16 | 2011-11-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7456928B2 (en) * | 2005-08-29 | 2008-11-25 | Micron Technology, Inc. | Systems and methods for controlling ambient pressure during processing of microfeature workpieces, including during immersion lithography |
| US7411658B2 (en) | 2005-10-06 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7986395B2 (en) * | 2005-10-24 | 2011-07-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography apparatus and methods |
| JP2007123775A (ja) * | 2005-10-31 | 2007-05-17 | Tokyo Ohka Kogyo Co Ltd | 洗浄液および洗浄方法 |
| JP5036996B2 (ja) | 2005-10-31 | 2012-09-26 | 東京応化工業株式会社 | 洗浄液および洗浄方法 |
| US7804577B2 (en) | 2005-11-16 | 2010-09-28 | Asml Netherlands B.V. | Lithographic apparatus |
| US7864292B2 (en) | 2005-11-16 | 2011-01-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2007142217A (ja) * | 2005-11-18 | 2007-06-07 | Taiwan Semiconductor Manufacturing Co Ltd | イマージョン式リソグラフィ露光装置およびその方法 |
| FR2893725B1 (fr) * | 2005-11-21 | 2009-05-29 | Taiwan Semiconductor Mfg | Dispositif et procede d'exposition de lithographie par immersion megasonique |
| TWI413155B (zh) | 2005-11-22 | 2013-10-21 | Tokyo Ohka Kogyo Co Ltd | 光微影蝕刻用洗淨液及使用其之曝光裝置之洗淨方法 |
| US7633073B2 (en) | 2005-11-23 | 2009-12-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7773195B2 (en) | 2005-11-29 | 2010-08-10 | Asml Holding N.V. | System and method to increase surface tension and contact angle in immersion lithography |
| JP2007150102A (ja) * | 2005-11-29 | 2007-06-14 | Fujitsu Ltd | 露光装置及び光学素子の洗浄方法 |
| US8125610B2 (en) | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
| US7420194B2 (en) | 2005-12-27 | 2008-09-02 | Asml Netherlands B.V. | Lithographic apparatus and substrate edge seal |
| US7649611B2 (en) | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8472004B2 (en) * | 2006-01-18 | 2013-06-25 | Micron Technology, Inc. | Immersion photolithography scanner |
| US8045134B2 (en) | 2006-03-13 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus, control system and device manufacturing method |
| WO2007105645A1 (ja) * | 2006-03-13 | 2007-09-20 | Nikon Corporation | 露光装置、メンテナンス方法、露光方法及びデバイス製造方法 |
| KR20080108341A (ko) * | 2006-04-03 | 2008-12-12 | 가부시키가이샤 니콘 | 액침 액체에 대해 소용매성인 입사면 및 광학 윈도우 |
| US9477158B2 (en) | 2006-04-14 | 2016-10-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| DE102006021797A1 (de) | 2006-05-09 | 2007-11-15 | Carl Zeiss Smt Ag | Optische Abbildungseinrichtung mit thermischer Dämpfung |
| CN102298274A (zh) | 2006-05-18 | 2011-12-28 | 株式会社尼康 | 曝光方法及装置、维护方法、以及组件制造方法 |
| US7969548B2 (en) * | 2006-05-22 | 2011-06-28 | Asml Netherlands B.V. | Lithographic apparatus and lithographic apparatus cleaning method |
| CN101385124B (zh) * | 2006-05-23 | 2011-02-09 | 株式会社尼康 | 维修方法、曝光方法及装置、以及组件制造方法 |
| US20070280526A1 (en) * | 2006-05-30 | 2007-12-06 | Irfan Malik | Determining Information about Defects or Binning Defects Detected on a Wafer after an Immersion Lithography Process is Performed on the Wafer |
| US8564759B2 (en) | 2006-06-29 | 2013-10-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for immersion lithography |
| WO2008026593A1 (en) * | 2006-08-30 | 2008-03-06 | Nikon Corporation | Exposure apparatus, device production method, cleaning method, and cleaning member |
| KR20090060270A (ko) * | 2006-09-08 | 2009-06-11 | 가부시키가이샤 니콘 | 클리닝용 부재, 클리닝 방법, 그리고 디바이스 제조 방법 |
| DE102006050835A1 (de) | 2006-10-27 | 2008-05-08 | Carl Zeiss Smt Ag | Verfahren und Vorrichtung zum Austausch von Objetkivteilen |
| US8045135B2 (en) | 2006-11-22 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus with a fluid combining unit and related device manufacturing method |
| US8634053B2 (en) | 2006-12-07 | 2014-01-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US9632425B2 (en) | 2006-12-07 | 2017-04-25 | Asml Holding N.V. | Lithographic apparatus, a dryer and a method of removing liquid from a surface |
| JP5099476B2 (ja) * | 2006-12-28 | 2012-12-19 | 株式会社ニコン | 清掃装置及び清掃システム、パターン形成装置、清掃方法及び露光方法、並びにデバイス製造方法 |
| US8817226B2 (en) * | 2007-02-15 | 2014-08-26 | Asml Holding N.V. | Systems and methods for insitu lens cleaning using ozone in immersion lithography |
| US8654305B2 (en) * | 2007-02-15 | 2014-02-18 | Asml Holding N.V. | Systems and methods for insitu lens cleaning in immersion lithography |
| US8237911B2 (en) | 2007-03-15 | 2012-08-07 | Nikon Corporation | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
| US8011377B2 (en) | 2007-05-04 | 2011-09-06 | Asml Netherlands B.V. | Cleaning device and a lithographic apparatus cleaning method |
| US8947629B2 (en) | 2007-05-04 | 2015-02-03 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
| US9013672B2 (en) | 2007-05-04 | 2015-04-21 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
| US7866330B2 (en) | 2007-05-04 | 2011-01-11 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
| WO2008146819A1 (ja) * | 2007-05-28 | 2008-12-04 | Nikon Corporation | 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法 |
| JP5018249B2 (ja) * | 2007-06-04 | 2012-09-05 | 株式会社ニコン | クリーニング装置、クリーニング方法、露光装置、及びデバイス製造方法 |
| US20090014030A1 (en) * | 2007-07-09 | 2009-01-15 | Asml Netherlands B.V. | Substrates and methods of using those substrates |
| US7916269B2 (en) * | 2007-07-24 | 2011-03-29 | Asml Netherlands B.V. | Lithographic apparatus and contamination removal or prevention method |
| US20090025753A1 (en) * | 2007-07-24 | 2009-01-29 | Asml Netherlands B.V. | Lithographic Apparatus And Contamination Removal Or Prevention Method |
| SG151198A1 (en) * | 2007-09-27 | 2009-04-30 | Asml Netherlands Bv | Methods relating to immersion lithography and an immersion lithographic apparatus |
| NL1035942A1 (nl) * | 2007-09-27 | 2009-03-30 | Asml Netherlands Bv | Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus. |
| JP5017232B2 (ja) * | 2007-10-31 | 2012-09-05 | エーエスエムエル ネザーランズ ビー．ブイ． | クリーニング装置および液浸リソグラフィ装置 |
| NL1036273A1 (nl) * | 2007-12-18 | 2009-06-19 | Asml Netherlands Bv | Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus. |
| NL1036306A1 (nl) | 2007-12-20 | 2009-06-23 | Asml Netherlands Bv | Lithographic apparatus and in-line cleaning apparatus. |
| US8451425B2 (en) * | 2007-12-28 | 2013-05-28 | Nikon Corporation | Exposure apparatus, exposure method, cleaning apparatus, and device manufacturing method |
| US8339572B2 (en) | 2008-01-25 | 2012-12-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20100039628A1 (en) * | 2008-03-19 | 2010-02-18 | Nikon Corporation | Cleaning tool, cleaning method, and device fabricating method |
| US8654306B2 (en) * | 2008-04-14 | 2014-02-18 | Nikon Corporation | Exposure apparatus, cleaning method, and device fabricating method |
| NL1036709A1 (nl) * | 2008-04-24 | 2009-10-27 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
| US9176393B2 (en) | 2008-05-28 | 2015-11-03 | Asml Netherlands B.V. | Lithographic apparatus and a method of operating the apparatus |
| US20100045949A1 (en) * | 2008-08-11 | 2010-02-25 | Nikon Corporation | Exposure apparatus, maintaining method and device fabricating method |
| NL2003363A (en) | 2008-09-10 | 2010-03-15 | Asml Netherlands Bv | Lithographic apparatus, method of manufacturing an article for a lithographic apparatus and device manufacturing method. |
| NL2003421A (en) * | 2008-10-21 | 2010-04-22 | Asml Netherlands Bv | Lithographic apparatus and a method of removing contamination. |
| US8477284B2 (en) * | 2008-10-22 | 2013-07-02 | Nikon Corporation | Apparatus and method to control vacuum at porous material using multiple porous materials |
| WO2010088194A2 (en) | 2009-01-28 | 2010-08-05 | Advanced Technology Materials, Inc. | Lithographic tool in situ clean formulations |
| TW201102765A (en) * | 2009-07-01 | 2011-01-16 | Nikon Corp | Grinding device, grinding method, exposure device and production method of a device |
| NL2005207A (en) | 2009-09-28 | 2011-03-29 | Asml Netherlands Bv | Heat pipe, lithographic apparatus and device manufacturing method. |
| NL2005610A (en) | 2009-12-02 | 2011-06-06 | Asml Netherlands Bv | Lithographic apparatus and surface cleaning method. |
| US20110134400A1 (en) * | 2009-12-04 | 2011-06-09 | Nikon Corporation | Exposure apparatus, liquid immersion member, and device manufacturing method |
| CA2784148A1 (en) * | 2009-12-28 | 2011-07-28 | Pioneer Hi-Bred International, Inc. | Sorghum fertility restorer genotypes and methods of marker-assisted selection |
| US20110201888A1 (en) * | 2010-02-18 | 2011-08-18 | Verner Sarah N | Medical Devices and Methods |
| US20120062858A1 (en) * | 2010-04-02 | 2012-03-15 | Nikon Corporation | Cleaning method, device manufacturing method, exposure apparatus, and device manufacturing system |
| EP2381310B1 (en) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Fluid handling structure and lithographic apparatus |
| US20120188521A1 (en) | 2010-12-27 | 2012-07-26 | Nikon Corporation | Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program and storage medium |
| WO2013086217A1 (en) | 2011-12-06 | 2013-06-13 | Masco Corporation Of Indiana | Ozone distribution in a faucet |
| DE102013100473A1 (de) * | 2013-01-17 | 2014-07-17 | Seho Systemtechnik Gmbh | Verfahren und Vorrichtung zum Reinigen einer Lötdüse |
| JP2015185813A (ja) * | 2014-03-26 | 2015-10-22 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板洗浄方法および基板洗浄装置 |
| US9776218B2 (en) * | 2015-08-06 | 2017-10-03 | Asml Netherlands B.V. | Controlled fluid flow for cleaning an optical element |
| US10018113B2 (en) * | 2015-11-11 | 2018-07-10 | General Electric Company | Ultrasonic cleaning system and method |
| CA3007437C (en) | 2015-12-21 | 2021-09-28 | Delta Faucet Company | Fluid delivery system including a disinfectant device |
| CN107442518B (zh) * | 2016-05-31 | 2019-12-24 | 上海微电子装备（集团）股份有限公司 | 一种光刻机工件台自动清洁装置及方法 |
| US10962471B1 (en) * | 2018-07-09 | 2021-03-30 | Fazal Fazlin | Point of care system for quantifying components of blood |
| JP6650539B1 (ja) | 2019-01-18 | 2020-02-19 | エヌ・ティ・ティ・アドバンステクノロジ株式会社 | 光コネクタ用清掃具 |
| CN111167803A (zh) * | 2019-12-14 | 2020-05-19 | 上海航翼高新技术发展研究院有限公司 | 一种激光湿清洗方法及装置 |
| CN113070273A (zh) * | 2020-01-03 | 2021-07-06 | 中国科学院上海硅酸盐研究所 | 一种提高氟化钙晶体光学元件激光损伤阈值的表面处理方法 |
| CN114518696B (zh) | 2020-11-20 | 2025-01-10 | 长鑫存储技术有限公司 | 清洁系统、曝光机台及清洁方法 |
| CN112563166B (zh) * | 2020-12-01 | 2024-07-16 | 中国计量大学 | 一种真空脱泡装置 |
| CN119668046B (zh) * | 2024-12-19 | 2025-09-26 | 苏州励索精密装备科技有限公司 | 一种用于浸没式光刻机的浸没头检测装置及方法 |
Family Cites Families (295)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3139101A (en) * | 1962-07-23 | 1964-06-30 | Gen Motors Corp | Sonic surface cleaner |
| GB1242527A (en) | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
| EP0023231B1 (de) * | 1979-07-27 | 1982-08-11 | Tabarelli, Werner, Dr. | Optisches Lithographieverfahren und Einrichtung zum Kopieren eines Musters auf eine Halbleiterscheibe |
| US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
| US4509852A (en) | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
| JPS57117238A (en) | 1981-01-14 | 1982-07-21 | Nippon Kogaku Kk <Nikon> | Exposing and baking device for manufacturing integrated circuit with illuminometer |
| JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
| JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
| JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
| DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
| DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
| JPS6197918A (ja) | 1984-10-19 | 1986-05-16 | Hitachi Ltd | Ｘ線露光装置 |
| JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
| JPH0782981B2 (ja) | 1986-02-07 | 1995-09-06 | 株式会社ニコン | 投影露光方法及び装置 |
| JPH0695511B2 (ja) | 1986-09-17 | 1994-11-24 | 大日本スクリ−ン製造株式会社 | 洗浄乾燥処理方法 |
| JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
| JPH0345522U (enExample) * | 1989-09-08 | 1991-04-26 | ||
| JP2897355B2 (ja) | 1990-07-05 | 1999-05-31 | 株式会社ニコン | アライメント方法，露光装置，並びに位置検出方法及び装置 |
| JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
| JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
| JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるｌｓｉ製造縮小投影露光装置の光学系 |
| JPH05100182A (ja) | 1991-10-11 | 1993-04-23 | Nikon Corp | レーザトラツプ集塵装置及び集塵方法 |
| JPH05304072A (ja) | 1992-04-08 | 1993-11-16 | Nec Corp | 半導体装置の製造方法 |
| JPH06459A (ja) * | 1992-06-19 | 1994-01-11 | T H I Syst Kk | 洗浄乾燥方法とその装置 |
| JP3246615B2 (ja) | 1992-07-27 | 2002-01-15 | 株式会社ニコン | 照明光学装置、露光装置、及び露光方法 |
| JPH06188169A (ja) | 1992-08-24 | 1994-07-08 | Canon Inc | 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法 |
| JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
| JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
| JPH06181157A (ja) | 1992-12-15 | 1994-06-28 | Nikon Corp | 低発塵性の装置 |
| JP2520833B2 (ja) | 1992-12-21 | 1996-07-31 | 東京エレクトロン株式会社 | 浸漬式の液処理装置 |
| JP3412704B2 (ja) | 1993-02-26 | 2003-06-03 | 株式会社ニコン | 投影露光方法及び装置、並びに露光装置 |
| JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
| US6989647B1 (en) | 1994-04-01 | 2006-01-24 | Nikon Corporation | Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device |
| US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
| US7365513B1 (en) | 1994-04-01 | 2008-04-29 | Nikon Corporation | Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device |
| US5874820A (en) | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
| JP3555230B2 (ja) | 1994-05-18 | 2004-08-18 | 株式会社ニコン | 投影露光装置 |
| JP3613288B2 (ja) | 1994-10-18 | 2005-01-26 | 株式会社ニコン | 露光装置用のクリーニング装置 |
| US5623853A (en) | 1994-10-19 | 1997-04-29 | Nikon Precision Inc. | Precision motion stage with single guide beam and follower stage |
| JP3647100B2 (ja) | 1995-01-12 | 2005-05-11 | キヤノン株式会社 | 検査装置およびこれを用いた露光装置やデバイス生産方法 |
| JPH08195375A (ja) | 1995-01-17 | 1996-07-30 | Sony Corp | 回転乾燥方法および回転乾燥装置 |
| US6008500A (en) | 1995-04-04 | 1999-12-28 | Nikon Corporation | Exposure apparatus having dynamically isolated reaction frame |
| JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
| JPH08316124A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
| US6297871B1 (en) | 1995-09-12 | 2001-10-02 | Nikon Corporation | Exposure apparatus |
| US5798838A (en) | 1996-02-28 | 1998-08-25 | Nikon Corporation | Projection exposure apparatus having function of detecting intensity distribution of spatial image, and method of detecting the same |
| JP3349636B2 (ja) | 1996-10-04 | 2002-11-25 | 株式会社プレテック | 高周波洗浄装置 |
| US5825043A (en) | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
| JPH10116760A (ja) | 1996-10-08 | 1998-05-06 | Nikon Corp | 露光装置及び基板保持装置 |
| US6033478A (en) | 1996-11-05 | 2000-03-07 | Applied Materials, Inc. | Wafer support with improved temperature control |
| JP4029182B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 露光方法 |
| CN1244018C (zh) | 1996-11-28 | 2006-03-01 | 株式会社尼康 | 曝光方法和曝光装置 |
| JP4029183B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
| WO1998028665A1 (en) | 1996-12-24 | 1998-07-02 | Koninklijke Philips Electronics N.V. | Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device |
| US5815246A (en) | 1996-12-24 | 1998-09-29 | U.S. Philips Corporation | Two-dimensionally balanced positioning device, and lithographic device provided with such a positioning device |
| US6262796B1 (en) | 1997-03-10 | 2001-07-17 | Asm Lithography B.V. | Positioning device having two object holders |
| JPH10255319A (ja) * | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
| DE69817663T2 (de) * | 1997-04-23 | 2004-06-24 | Nikon Corp. | Optischer Belichtungsapparat und optisches Reinigungsverfahren |
| US6268904B1 (en) * | 1997-04-23 | 2001-07-31 | Nikon Corporation | Optical exposure apparatus and photo-cleaning method |
| JP3747566B2 (ja) * | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
| JP3817836B2 (ja) * | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
| AU755913B2 (en) | 1997-06-18 | 2003-01-02 | Masad Damha | Nucleic acid biosensor diagnostics |
| JPH1116816A (ja) | 1997-06-25 | 1999-01-22 | Nikon Corp | 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法 |
| US5980647A (en) * | 1997-07-15 | 1999-11-09 | International Business Machines Corporation | Metal removal cleaning process and apparatus |
| US6085764A (en) * | 1997-07-22 | 2000-07-11 | Tdk Corporation | Cleaning apparatus and method |
| JP3445120B2 (ja) | 1997-09-30 | 2003-09-08 | キヤノン株式会社 | 露光装置及びデバイスの製造方法 |
| JP4210871B2 (ja) | 1997-10-31 | 2009-01-21 | 株式会社ニコン | 露光装置 |
| WO1999027568A1 (en) | 1997-11-21 | 1999-06-03 | Nikon Corporation | Projection aligner and projection exposure method |
| JPH11162831A (ja) * | 1997-11-21 | 1999-06-18 | Nikon Corp | 投影露光装置及び投影露光方法 |
| JPH11283903A (ja) * | 1998-03-30 | 1999-10-15 | Nikon Corp | 投影光学系検査装置及び同装置を備えた投影露光装置 |
| JPH11166990A (ja) | 1997-12-04 | 1999-06-22 | Nikon Corp | ステージ装置及び露光装置並びに走査型露光装置 |
| JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
| US6208407B1 (en) | 1997-12-22 | 2001-03-27 | Asm Lithography B.V. | Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement |
| JPH11191525A (ja) * | 1997-12-26 | 1999-07-13 | Nikon Corp | 投影露光装置 |
| DE19806284C2 (de) * | 1998-02-16 | 2000-02-24 | Inventa Ag | Wärmehärtbare Beschichtungsmassen, Verfahren zur Herstellung und deren Verwendung |
| JP4207240B2 (ja) | 1998-02-20 | 2009-01-14 | 株式会社ニコン | 露光装置用照度計、リソグラフィ・システム、照度計の較正方法およびマイクロデバイスの製造方法 |
| US5913981A (en) | 1998-03-05 | 1999-06-22 | Micron Technology, Inc. | Method of rinsing and drying semiconductor wafers in a chamber with a moveable side wall |
| AU2747999A (en) | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
| US5958143A (en) | 1998-04-28 | 1999-09-28 | The Regents Of The University Of California | Cleaning process for EUV optical substrates |
| US6459472B1 (en) | 1998-05-15 | 2002-10-01 | Asml Netherlands B.V. | Lithographic device |
| JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
| JP2000091207A (ja) * | 1998-09-14 | 2000-03-31 | Nikon Corp | 投影露光装置及び投影光学系の洗浄方法 |
| JP2000097616A (ja) | 1998-09-22 | 2000-04-07 | Nikon Corp | 干渉計 |
| JP2000311933A (ja) | 1999-04-27 | 2000-11-07 | Canon Inc | 基板保持装置、基板搬送システム、露光装置、塗布装置およびデバイス製造方法ならびに基板保持部クリーニング方法 |
| JP2000354835A (ja) | 1999-06-15 | 2000-12-26 | Toshiba Corp | 超音波洗浄処理方法及びその装置 |
| JP2001013677A (ja) * | 1999-06-28 | 2001-01-19 | Shin Etsu Chem Co Ltd | ペリクル収納容器の洗浄方法 |
| US6459672B1 (en) | 1999-09-28 | 2002-10-01 | Sony Corporation | Optical head and optical disc device |
| AU6005499A (en) * | 1999-10-07 | 2001-04-23 | Nikon Corporation | Substrate, stage device, method of driving stage, exposure system and exposure method |
| WO2001035168A1 (en) | 1999-11-10 | 2001-05-17 | Massachusetts Institute Of Technology | Interference lithography utilizing phase-locked scanning beams |
| US7187503B2 (en) | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
| US6995930B2 (en) | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
| US6421932B2 (en) | 2000-02-14 | 2002-07-23 | Hitachi Electronics Engineering Co., Ltd. | Method and apparatus for drying substrate plates |
| HU225403B1 (en) | 2000-03-13 | 2006-11-28 | Andras Dr Boerzsoenyi | Method and apparatus for calibration of flowmeter of liquid flowing in canal |
| JP3996730B2 (ja) | 2000-03-31 | 2007-10-24 | 株式会社日立製作所 | 半導体部品の製造方法 |
| US6466365B1 (en) | 2000-04-07 | 2002-10-15 | Corning Incorporated | Film coated optical lithography elements and method of making |
| JP2001291855A (ja) | 2000-04-08 | 2001-10-19 | Takashi Miura | 固体撮像素子 |
| JP3531914B2 (ja) | 2000-04-14 | 2004-05-31 | キヤノン株式会社 | 光学装置、露光装置及びデバイス製造方法 |
| JP2002014005A (ja) | 2000-04-25 | 2002-01-18 | Nikon Corp | 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置 |
| US20020041377A1 (en) | 2000-04-25 | 2002-04-11 | Nikon Corporation | Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method |
| DE10130999A1 (de) | 2000-06-29 | 2002-04-18 | D M S Co | Multifunktions-Reinigungsmodul einer Herstellungseinrichtung für Flachbildschirme und Reinigungsgerät mit Verwendung desselben |
| US6446365B1 (en) | 2000-09-15 | 2002-09-10 | Vermeer Manufacturing Company | Nozzle mount for soft excavation |
| JP3840388B2 (ja) | 2000-09-25 | 2006-11-01 | 東京エレクトロン株式会社 | 基板処理装置 |
| KR100798769B1 (ko) | 2000-09-25 | 2008-01-29 | 동경 엘렉트론 주식회사 | 기판 처리장치 |
| KR100866818B1 (ko) | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
| JP2002289514A (ja) | 2000-12-22 | 2002-10-04 | Nikon Corp | 露光装置及び露光方法 |
| JP4345098B2 (ja) | 2001-02-06 | 2009-10-14 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
| US20020163629A1 (en) | 2001-05-07 | 2002-11-07 | Michael Switkes | Methods and apparatus employing an index matching medium |
| DE10123027B4 (de) | 2001-05-11 | 2005-07-21 | Evotec Oai Ag | Vorrichtung zur Untersuchung chemischer und/oder biologischer Proben |
| JP2002336804A (ja) * | 2001-05-15 | 2002-11-26 | Nikon Corp | 光学部品の洗浄方法及び露光装置 |
| TW529172B (en) | 2001-07-24 | 2003-04-21 | Asml Netherlands Bv | Imaging apparatus |
| US7145671B2 (en) | 2001-08-16 | 2006-12-05 | Hewlett-Packard Development Company, L.P. | Image forming devices, methods of operating an image forming device, a method of providing consumable information, and a method of operating a printer |
| JP2003124089A (ja) | 2001-10-09 | 2003-04-25 | Nikon Corp | 荷電粒子線露光装置及び露光方法 |
| US6801301B2 (en) | 2001-10-12 | 2004-10-05 | Canon Kabushiki Kaisha | Exposure apparatus |
| EP1313337A1 (de) | 2001-11-15 | 2003-05-21 | Siemens Aktiengesellschaft | Verfahren zur Übertragung von Informationen in einem zellularen Funkkommunikationssystem mit Funksektoren |
| EP1329773A3 (en) | 2002-01-18 | 2006-08-30 | ASML Netherlands B.V. | Lithographic apparatus, apparatus cleaning method, and device manufacturing method |
| DE10229249A1 (de) | 2002-03-01 | 2003-09-04 | Zeiss Carl Semiconductor Mfg | Refraktives Projektionsobjektiv mit einer Taille |
| US7154676B2 (en) | 2002-03-01 | 2006-12-26 | Carl Zeiss Smt A.G. | Very-high aperture projection objective |
| US7190527B2 (en) | 2002-03-01 | 2007-03-13 | Carl Zeiss Smt Ag | Refractive projection objective |
| US7092069B2 (en) | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
| DE10229818A1 (de) | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
| DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
| US20030200996A1 (en) | 2002-04-30 | 2003-10-30 | Hiatt William Mark | Method and system for cleaning a wafer chuck |
| KR20040104691A (ko) | 2002-05-03 | 2004-12-10 | 칼 짜이스 에스엠테 아게 | 높은 개구를 갖는 투영 대물렌즈 |
| US6853794B2 (en) * | 2002-07-02 | 2005-02-08 | Lightel Technologies Inc. | Apparatus for cleaning optical fiber connectors and fiber optic parts |
| US20040021061A1 (en) | 2002-07-30 | 2004-02-05 | Frederik Bijkerk | Photodiode, charged-coupled device and method for the production |
| JP2004071855A (ja) | 2002-08-07 | 2004-03-04 | Tokyo Electron Ltd | 基板処理装置及び基板処理方法 |
| TWI249082B (en) | 2002-08-23 | 2006-02-11 | Nikon Corp | Projection optical system and method for photolithography and exposure apparatus and method using same |
| JP3922637B2 (ja) | 2002-08-30 | 2007-05-30 | 本田技研工業株式会社 | サイドエアバッグシステム |
| US6988326B2 (en) | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
| US6954993B1 (en) | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
| US7093375B2 (en) | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
| US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
| US6788477B2 (en) | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
| EP1429188B1 (en) | 2002-11-12 | 2013-06-19 | ASML Netherlands B.V. | Lithographic projection apparatus |
| DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
| EP1420299B1 (en) | 2002-11-12 | 2011-01-05 | ASML Netherlands B.V. | Immersion lithographic apparatus and device manufacturing method |
| EP1420298B1 (en) | 2002-11-12 | 2013-02-20 | ASML Netherlands B.V. | Lithographic apparatus |
| JP3953460B2 (ja) | 2002-11-12 | 2007-08-08 | エーエスエムエル ネザーランズ ビー．ブイ． | リソグラフィ投影装置 |
| SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| TWI232357B (en) | 2002-11-12 | 2005-05-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| CN101470360B (zh) | 2002-11-12 | 2013-07-24 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
| SG131766A1 (en) | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| DE10253679A1 (de) | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
| JP3884371B2 (ja) | 2002-11-26 | 2007-02-21 | 株式会社東芝 | レチクル、露光モニタ方法、露光方法、及び半導体装置の製造方法 |
| TW200412617A (en) | 2002-12-03 | 2004-07-16 | Nikon Corp | Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method |
| DE10258718A1 (de) | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
| CN1723541B (zh) | 2002-12-10 | 2010-06-02 | 株式会社尼康 | 曝光装置和器件制造方法 |
| KR101085372B1 (ko) | 2002-12-10 | 2011-11-21 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| JP4525062B2 (ja) | 2002-12-10 | 2010-08-18 | 株式会社ニコン | 露光装置及びデバイス製造方法、露光システム |
| JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| CN101424883B (zh) | 2002-12-10 | 2013-05-15 | 株式会社尼康 | 曝光设备和器件制造法 |
| EP1429190B1 (en) | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Exposure apparatus and method |
| ATE424026T1 (de) | 2002-12-13 | 2009-03-15 | Koninkl Philips Electronics Nv | Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht |
| DE60314668T2 (de) | 2002-12-19 | 2008-03-06 | Koninklijke Philips Electronics N.V. | Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts |
| ATE335272T1 (de) | 2002-12-19 | 2006-08-15 | Koninkl Philips Electronics Nv | Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts |
| US7010958B2 (en) | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
| US6781670B2 (en) | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
| JP2004007417A (ja) | 2003-02-10 | 2004-01-08 | Fujitsu Ltd | 情報提供システム |
| TWI247339B (en) | 2003-02-21 | 2006-01-11 | Asml Holding Nv | Lithographic printing with polarized light |
| US7206059B2 (en) | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
| US6943941B2 (en) | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
| US7029832B2 (en) | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
| JPWO2004081999A1 (ja) * | 2003-03-12 | 2006-06-15 | 株式会社ニコン | 光学装置、露光装置、並びにデバイス製造方法 |
| GB0306176D0 (en) * | 2003-03-18 | 2003-04-23 | Imp College Innovations Ltd | Tubing |
| US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
| WO2004093159A2 (en) | 2003-04-09 | 2004-10-28 | Nikon Corporation | Immersion lithography fluid control system |
| KR101745223B1 (ko) | 2003-04-10 | 2017-06-08 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
| JP4656057B2 (ja) | 2003-04-10 | 2011-03-23 | 株式会社ニコン | 液浸リソグラフィ装置用電気浸透素子 |
| EP3352010A1 (en) | 2003-04-10 | 2018-07-25 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
| SG2014015176A (en) | 2003-04-10 | 2015-06-29 | Nippon Kogaku Kk | Environmental system including vacuum scavange for an immersion lithography apparatus |
| SG2012031738A (en) | 2003-04-11 | 2015-07-30 | Nippon Kogaku Kk | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
| CN101825847B (zh) | 2003-04-11 | 2013-10-16 | 株式会社尼康 | 用于沉浸式光刻光学系统的清洗方法 |
| WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
| JP2006523958A (ja) | 2003-04-17 | 2006-10-19 | 株式会社ニコン | 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造 |
| JP4146755B2 (ja) | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
| JP4025683B2 (ja) | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
| TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| KR20060009356A (ko) | 2003-05-15 | 2006-01-31 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| JP2005277363A (ja) | 2003-05-23 | 2005-10-06 | Nikon Corp | 露光装置及びデバイス製造方法 |
| TWI612556B (zh) | 2003-05-23 | 2018-01-21 | Nikon Corp | 曝光裝置、曝光方法及元件製造方法 |
| TWI470671B (zh) * | 2003-05-23 | 2015-01-21 | 尼康股份有限公司 | Exposure method and exposure apparatus, and device manufacturing method |
| CN1307456C (zh) | 2003-05-23 | 2007-03-28 | 佳能株式会社 | 投影光学系统、曝光装置及器件的制造方法 |
| EP2453465A3 (en) | 2003-05-28 | 2018-01-03 | Nikon Corporation | Exposure method, exposure apparatus, and method for producing a device |
| JP2004356356A (ja) | 2003-05-29 | 2004-12-16 | Oki Electric Ind Co Ltd | 洗浄終了判定方法および洗浄装置 |
| EP1486827B1 (en) | 2003-06-11 | 2011-11-02 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7317504B2 (en) | 2004-04-08 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4084710B2 (ja) | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
| JP4054285B2 (ja) | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
| US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
| JP4029064B2 (ja) | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
| JP4084712B2 (ja) | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
| US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
| KR20060027832A (ko) | 2003-07-01 | 2006-03-28 | 가부시키가이샤 니콘 | 광학 엘리먼트로서 동위원소적으로 특정된 유체를 사용하는방법 |
| KR101211451B1 (ko) | 2003-07-09 | 2012-12-12 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| FR2857292B1 (fr) * | 2003-07-11 | 2007-04-20 | Oreal | Recipient comportant une piece de revetement et son procede de fabrication |
| US7153406B2 (en) * | 2003-07-15 | 2006-12-26 | E. I. Du Pont De Nemours And Company | Cathodic electrodeposition coating compositions and process for using same |
| US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
| US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
| KR101935709B1 (ko) | 2003-07-28 | 2019-01-04 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법 |
| US7175968B2 (en) | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
| US7326522B2 (en) | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
| US7370659B2 (en) | 2003-08-06 | 2008-05-13 | Micron Technology, Inc. | Photolithographic stepper and/or scanner machines including cleaning devices and methods of cleaning photolithographic stepper and/or scanner machines |
| US7061578B2 (en) | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
| US7700267B2 (en) | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
| US7579135B2 (en) | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
| US7085075B2 (en) | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
| US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
| JP2005072404A (ja) | 2003-08-27 | 2005-03-17 | Sony Corp | 露光装置および半導体装置の製造方法 |
| SG10201607457PA (en) | 2003-08-29 | 2016-10-28 | Nikon Corp | Exposure apparatus, exposure method and device manufacturing method |
| US6954256B2 (en) | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
| JP4305095B2 (ja) | 2003-08-29 | 2009-07-29 | 株式会社ニコン | 光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法 |
| TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
| KR101242886B1 (ko) | 2003-08-29 | 2013-03-12 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| US7014966B2 (en) | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
| KR20170070264A (ko) | 2003-09-03 | 2017-06-21 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
| KR101248325B1 (ko) | 2003-09-26 | 2013-03-27 | 가부시키가이샤 니콘 | 투영노광장치 및 투영노광장치의 세정방법, 메인터넌스방법 그리고 디바이스의 제조방법 |
| US6961186B2 (en) | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
| US7369217B2 (en) | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
| JP2005136374A (ja) | 2003-10-06 | 2005-05-26 | Matsushita Electric Ind Co Ltd | 半導体製造装置及びそれを用いたパターン形成方法 |
| EP1524588A1 (en) | 2003-10-15 | 2005-04-20 | Sony Ericsson Mobile Communications AB | User input device for a portable electronic device |
| EP1524558A1 (en) | 2003-10-15 | 2005-04-20 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7678527B2 (en) | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
| JP2007525824A (ja) | 2003-11-05 | 2007-09-06 | ディーエスエム アイピー アセッツ ビー．ブイ． | マイクロチップを製造するための方法および装置 |
| US7924397B2 (en) | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
| US7545481B2 (en) | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1695148B1 (en) | 2003-11-24 | 2015-10-28 | Carl Zeiss SMT GmbH | Immersion objective |
| US7125652B2 (en) | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
| KR101281397B1 (ko) | 2003-12-15 | 2013-07-02 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
| EP1697798A2 (en) | 2003-12-15 | 2006-09-06 | Carl Zeiss SMT AG | Projection objective having a high aperture and a planar end surface |
| WO2005059654A1 (en) | 2003-12-15 | 2005-06-30 | Carl Zeiss Smt Ag | Objective as a microlithography projection objective with at least one liquid lens |
| WO2005059645A2 (en) | 2003-12-19 | 2005-06-30 | Carl Zeiss Smt Ag | Microlithography projection objective with crystal elements |
| US20050185269A1 (en) | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
| JP4323946B2 (ja) | 2003-12-19 | 2009-09-02 | キヤノン株式会社 | 露光装置 |
| US7460206B2 (en) | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
| US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7589818B2 (en) | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
| US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20050147920A1 (en) | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
| US7088422B2 (en) | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
| US7145641B2 (en) | 2003-12-31 | 2006-12-05 | Asml Netherlands, B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
| ATE467902T1 (de) | 2004-01-05 | 2010-05-15 | Nikon Corp | Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren |
| JP4371822B2 (ja) | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
| JP4429023B2 (ja) | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| US20050153424A1 (en) | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
| CN1910494B (zh) | 2004-01-14 | 2011-08-10 | 卡尔蔡司Smt有限责任公司 | 反射折射投影物镜 |
| US8279524B2 (en) | 2004-01-16 | 2012-10-02 | Carl Zeiss Smt Gmbh | Polarization-modulating optical element |
| WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
| WO2005071491A2 (en) | 2004-01-20 | 2005-08-04 | Carl Zeiss Smt Ag | Exposure apparatus and measuring device for a projection lens |
| US7026259B2 (en) | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
| US7391501B2 (en) | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
| KR20070039869A (ko) | 2004-02-03 | 2007-04-13 | 브루스 더블유. 스미스 | 용액을 사용한 포토리소그래피 방법 및 관련 시스템 |
| US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1716454A1 (en) | 2004-02-09 | 2006-11-02 | Carl Zeiss SMT AG | Projection objective for a microlithographic projection exposure apparatus |
| WO2005076323A1 (ja) | 2004-02-10 | 2005-08-18 | Nikon Corporation | 露光装置及びデバイス製造方法、メンテナンス方法及び露光方法 |
| US20070165198A1 (en) | 2004-02-13 | 2007-07-19 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
| CN1922528A (zh) | 2004-02-18 | 2007-02-28 | 康宁股份有限公司 | 用于具有深紫外光的高数值孔径成象的反折射成象系统 |
| EP1727188A4 (en) | 2004-02-20 | 2008-11-26 | Nikon Corp | EXPOSURE DEVICE, FEEDING METHOD AND RECOVERY METHOD, EXPOSURE METHOD AND DEVICE MANUFACTURING METHOD |
| US20050205108A1 (en) | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
| US7027125B2 (en) | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
| US7084960B2 (en) | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
| US7227619B2 (en) | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7034917B2 (en) | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
| US7295283B2 (en) | 2004-04-02 | 2007-11-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2005098504A1 (en) | 2004-04-08 | 2005-10-20 | Carl Zeiss Smt Ag | Imaging system with mirror group |
| US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7271878B2 (en) | 2004-04-22 | 2007-09-18 | International Business Machines Corporation | Wafer cell for immersion lithography |
| US7244665B2 (en) | 2004-04-29 | 2007-07-17 | Micron Technology, Inc. | Wafer edge ring structures and methods of formation |
| US7379159B2 (en) | 2004-05-03 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2005111722A2 (en) | 2004-05-04 | 2005-11-24 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
| US20060244938A1 (en) | 2004-05-04 | 2006-11-02 | Karl-Heinz Schuster | Microlitographic projection exposure apparatus and immersion liquid therefore |
| US7091502B2 (en) | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
| KR101213831B1 (ko) | 2004-05-17 | 2012-12-24 | 칼 짜이스 에스엠티 게엠베하 | 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈 |
| US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7486381B2 (en) | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7796274B2 (en) | 2004-06-04 | 2010-09-14 | Carl Zeiss Smt Ag | System for measuring the image quality of an optical imaging system |
| KR101162128B1 (ko) * | 2004-06-09 | 2012-07-03 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7224427B2 (en) | 2004-08-03 | 2007-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Megasonic immersion lithography exposure apparatus and method |
| US7304715B2 (en) | 2004-08-13 | 2007-12-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7446850B2 (en) | 2004-12-03 | 2008-11-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2006062065A1 (ja) | 2004-12-06 | 2006-06-15 | Nikon Corporation | メンテナンス方法、メンテナンス機器、露光装置、及びデバイス製造方法 |
| US7248334B2 (en) | 2004-12-07 | 2007-07-24 | Asml Netherlands B.V. | Sensor shield |
| JP4752473B2 (ja) | 2004-12-09 | 2011-08-17 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
| US7880860B2 (en) * | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7450217B2 (en) | 2005-01-12 | 2008-11-11 | Asml Netherlands B.V. | Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby |
| US7262422B2 (en) * | 2005-07-01 | 2007-08-28 | Spansion Llc | Use of supercritical fluid to dry wafer and clean lens in immersion lithography |
| US7921303B2 (en) * | 2005-11-18 | 2011-04-05 | Qualcomm Incorporated | Mobile security system and method |
| US8125610B2 (en) | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
| US7446859B2 (en) | 2006-01-27 | 2008-11-04 | International Business Machines Corporation | Apparatus and method for reducing contamination in immersion lithography |
| JP5304072B2 (ja) | 2007-07-18 | 2013-10-02 | ヤマハ株式会社 | 力覚制御装置、鍵盤楽器、力覚制御方法およびプログラム |
| US8033602B2 (en) * | 2007-07-20 | 2011-10-11 | Honda Motor Co., Ltd. | Vehicle seat |
| US20090025753A1 (en) | 2007-07-24 | 2009-01-29 | Asml Netherlands B.V. | Lithographic Apparatus And Contamination Removal Or Prevention Method |
| NL2004305A (en) * | 2009-03-13 | 2010-09-14 | Asml Netherlands Bv | Substrate table, immersion lithographic apparatus and device manufacturing method. |
-
2004
- 2004-04-02 CN CN201010113560XA patent/CN101825847B/zh not_active Expired - Fee Related
- 2004-04-02 KR KR1020137013978A patent/KR101525335B1/ko not_active Expired - Fee Related
- 2004-04-02 KR KR1020127014420A patent/KR101289959B1/ko not_active Expired - Fee Related
- 2004-04-02 EP EP09176911.7A patent/EP2161621B1/en not_active Expired - Lifetime
- 2004-04-02 SG SG10201803122UA patent/SG10201803122UA/en unknown
- 2004-04-02 CN CN2004800096916A patent/CN1867865B/zh not_active Expired - Fee Related
- 2004-04-02 EP EP04759103A patent/EP1614001B1/en not_active Expired - Lifetime
- 2004-04-02 JP JP2006509667A patent/JP4837556B2/ja not_active Expired - Fee Related
- 2004-04-02 SG SG2014015135A patent/SG2014015135A/en unknown
- 2004-04-02 EP EP09176912.5A patent/EP2172809B1/en not_active Expired - Lifetime
- 2004-04-02 KR KR1020117022193A patent/KR101508809B1/ko not_active Expired - Fee Related
- 2004-04-02 KR KR1020197001257A patent/KR20190007532A/ko not_active Ceased
- 2004-04-02 KR KR1020117018576A patent/KR101324818B1/ko not_active Expired - Fee Related
- 2004-04-02 WO PCT/US2004/010309 patent/WO2004093130A2/en not_active Ceased
- 2004-04-02 KR KR1020157002109A patent/KR101753496B1/ko not_active Expired - Fee Related
- 2004-04-02 KR KR1020127025016A patent/KR101318542B1/ko not_active Expired - Fee Related
- 2004-04-02 AT AT04759103T patent/ATE449982T1/de not_active IP Right Cessation
- 2004-04-02 SG SG2009027137A patent/SG185136A1/en unknown
- 2004-04-02 EP EP09176909.1A patent/EP2161619B8/en not_active Expired - Lifetime
- 2004-04-02 EP EP09176910A patent/EP2161620A1/en not_active Withdrawn
- 2004-04-02 SG SG2013077797A patent/SG2013077797A/en unknown
- 2004-04-02 KR KR1020147005470A patent/KR101597475B1/ko not_active Expired - Fee Related
- 2004-04-02 DE DE602004024295T patent/DE602004024295D1/de not_active Expired - Fee Related
- 2004-04-02 EP EP09176913A patent/EP2166413A1/en not_active Withdrawn
- 2004-04-02 KR KR1020177002557A patent/KR20170016014A/ko not_active Ceased
- 2004-04-02 SG SG2009027129A patent/SG189557A1/en unknown
- 2004-04-02 CN CN201610820643.XA patent/CN106444292A/zh active Pending
- 2004-04-02 CN CN201310419409.2A patent/CN103558736B/zh not_active Expired - Fee Related
- 2004-04-02 KR KR1020117024887A patent/KR101508810B1/ko not_active Expired - Fee Related
-
2005
- 2005-09-29 US US11/237,651 patent/US7522259B2/en not_active Expired - Fee Related
- 2005-10-11 KR KR1020057019365A patent/KR101342824B1/ko not_active Expired - Fee Related
-
2007
- 2007-02-08 US US11/703,802 patent/US20070171390A1/en not_active Abandoned
- 2007-02-09 US US11/704,241 patent/US8085381B2/en not_active Expired - Fee Related
- 2007-06-22 US US11/812,924 patent/US20070247601A1/en not_active Abandoned
- 2007-12-19 US US12/003,038 patent/US8670103B2/en not_active Expired - Fee Related
-
2009
- 2009-02-13 US US12/379,171 patent/US8269946B2/en not_active Expired - Fee Related
- 2009-03-09 US US12/382,078 patent/US8493545B2/en not_active Expired - Fee Related
- 2009-03-10 US US12/382,162 patent/US8670104B2/en not_active Expired - Fee Related
-
2010
- 2010-01-25 JP JP2010013488A patent/JP4983933B2/ja not_active Expired - Fee Related
-
2011
- 2011-04-26 JP JP2011098570A patent/JP5582087B2/ja not_active Expired - Fee Related
-
2012
- 2012-03-30 JP JP2012083162A patent/JP5648650B2/ja not_active Expired - Fee Related
-
2013
- 2013-08-14 JP JP2013168656A patent/JP5799991B2/ja not_active Expired - Fee Related
-
2014
- 2014-01-22 US US14/161,072 patent/US9958786B2/en not_active Expired - Fee Related
- 2014-08-28 JP JP2014173449A patent/JP6020528B2/ja not_active Expired - Fee Related
-
2015
- 2015-10-19 JP JP2015205420A patent/JP6135737B2/ja not_active Expired - Fee Related
-
2016
- 2016-10-13 JP JP2016201391A patent/JP6319393B2/ja not_active Expired - Lifetime
-
2017
- 2017-10-11 JP JP2017197311A patent/JP2018025818A/ja active Pending
-
2018
- 2018-03-14 US US15/921,121 patent/US20180203366A1/en not_active Abandoned
- 2018-12-05 JP JP2018228345A patent/JP2019045873A/ja not_active Withdrawn
Also Published As
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2161619B1 (en) | Cleanup method and immersion lithography apparatus | |
| HK1142964B (en) | Cleanup method and immersion lithography apparatus | |
| HK1140834A (en) | Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus | |
| HK1141595A (en) | Cleanup method for optics in immersion lithography | |
| HK1140834B (en) | Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus | |
| HK1141594A (en) | Cleanup method for optics in immersion lithography | |
| HK1142963A (en) | Cleanup method for optics in immersion lithography | |
| HK1087531B (en) | Cleanup method for optics in immersion lithography | |
| HK1233333A1 (en) | Immersion lithography apparatus, cleanup method thereof, device manufacturing method and liquid immersion lithography apparatus | |
| HK1195135B (en) | Cleanup method for optics in immersion lithography | |
| HK1145547B (en) | Cleanup method for optics in immersion lithography |