SG126714A1 - Light emitting device and method of manufacturing the same - Google Patents

Light emitting device and method of manufacturing the same

Info

Publication number
SG126714A1
SG126714A1 SG200207852A SG200207852A SG126714A1 SG 126714 A1 SG126714 A1 SG 126714A1 SG 200207852 A SG200207852 A SG 200207852A SG 200207852 A SG200207852 A SG 200207852A SG 126714 A1 SG126714 A1 SG 126714A1
Authority
SG
Singapore
Prior art keywords
light emitting
emitting device
film
electrode
auxiliary electrode
Prior art date
Application number
SG200207852A
Other languages
English (en)
Inventor
Shunpei Yamazaki
Masaaki Hiroki
Masakazu Murakami
Hideaki Kuwabara
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of SG126714A1 publication Critical patent/SG126714A1/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/123Connection of the pixel electrodes to the thin film transistors [TFT]
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/81Anodes
    • H10K50/814Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/82Cathodes
    • H10K50/824Cathodes combined with auxiliary electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/126Shielding, e.g. light-blocking means over the TFTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals
    • H10K59/1315Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/352Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/38Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/302Details of OLEDs of OLED structures
    • H10K2102/3023Direction of light emission
    • H10K2102/3026Top emission
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/805Electrodes
    • H10K59/8051Anodes
    • H10K59/80516Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/805Electrodes
    • H10K59/8052Cathodes
    • H10K59/80522Cathodes combined with auxiliary electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/873Encapsulations
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/929PN junction isolated integrated circuit with isolation walls having minimum dopant concentration at intermediate depth in epitaxial layer, e.g. diffused from both surfaces of epitaxial layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
SG200207852A 2002-01-24 2002-12-30 Light emitting device and method of manufacturing the same SG126714A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002014902 2002-01-24

Publications (1)

Publication Number Publication Date
SG126714A1 true SG126714A1 (en) 2006-11-29

Family

ID=19191913

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200504853-3A SG143063A1 (en) 2002-01-24 2002-12-30 Light emitting device and method of manufacturing the same
SG200207852A SG126714A1 (en) 2002-01-24 2002-12-30 Light emitting device and method of manufacturing the same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG200504853-3A SG143063A1 (en) 2002-01-24 2002-12-30 Light emitting device and method of manufacturing the same

Country Status (7)

Country Link
US (7) US6781162B2 (ja)
EP (2) EP1331666B1 (ja)
JP (8) JP2010153397A (ja)
KR (1) KR100979925B1 (ja)
CN (3) CN100438063C (ja)
SG (2) SG143063A1 (ja)
TW (2) TWI277359B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110635066A (zh) * 2019-09-26 2019-12-31 京东方科技集团股份有限公司 一种透明显示基板及其制作方法、透明显示装置

Families Citing this family (219)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW511298B (en) * 1999-12-15 2002-11-21 Semiconductor Energy Lab EL display device
US6608449B2 (en) * 2000-05-08 2003-08-19 Semiconductor Energy Laboratory Co., Ltd. Luminescent apparatus and method of manufacturing the same
JP4593019B2 (ja) * 2001-06-25 2010-12-08 株式会社半導体エネルギー研究所 発光装置の作製方法
US7098069B2 (en) 2002-01-24 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of preparing the same and device for fabricating the same
SG143063A1 (en) * 2002-01-24 2008-06-27 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
EP1343206B1 (en) 2002-03-07 2016-10-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting apparatus, electronic apparatus, illuminating device and method of fabricating the light emitting apparatus
US7190335B2 (en) * 2002-03-26 2007-03-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US6911772B2 (en) * 2002-06-12 2005-06-28 Eastman Kodak Company Oled display having color filters for improving contrast
US7291970B2 (en) * 2002-09-11 2007-11-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting apparatus with improved bank structure
WO2004058850A1 (ja) * 2002-12-25 2004-07-15 Semiconductor Energy Laboratory Co., Ltd. 高分子化合物、電界発光素子及び発光装置
JP4170120B2 (ja) * 2003-03-19 2008-10-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2004093500A1 (ja) * 2003-04-15 2004-10-28 Fujitsu Limited 有機el表示装置
JP4493926B2 (ja) * 2003-04-25 2010-06-30 株式会社半導体エネルギー研究所 製造装置
US20040264192A1 (en) * 2003-05-06 2004-12-30 Seiko Epson Corporation Light source apparatus, method of manufacture therefor, and projection-type display apparatus
JP4702516B2 (ja) * 2003-05-07 2011-06-15 エルジー エレクトロニクス インコーポレイティド 有機el素子及びその製造方法
JP3915734B2 (ja) 2003-05-12 2007-05-16 ソニー株式会社 蒸着マスクおよびこれを用いた表示装置の製造方法、ならびに表示装置
CN1324540C (zh) * 2003-06-05 2007-07-04 三星Sdi株式会社 具有多晶硅薄膜晶体管的平板显示装置
AU2003241651A1 (en) * 2003-06-13 2005-01-04 Fuji Electric Holdings Co., Ltd. Organic el display and method for producing the same
US7161184B2 (en) * 2003-06-16 2007-01-09 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US7221095B2 (en) * 2003-06-16 2007-05-22 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method for fabricating light emitting device
US7224118B2 (en) * 2003-06-17 2007-05-29 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic apparatus having a wiring connected to a counter electrode via an opening portion in an insulating layer that surrounds a pixel electrode
SG142140A1 (en) * 2003-06-27 2008-05-28 Semiconductor Energy Lab Display device and method of manufacturing thereof
WO2005011017A1 (en) * 2003-07-24 2005-02-03 Koninklijke Philips Electronics N.V. Organic elettroluminescent device with low oxygen content
US7211454B2 (en) * 2003-07-25 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a light emitting device including moving the source of the vapor deposition parallel to the substrate
EP1505666B1 (en) 2003-08-05 2018-04-04 LG Display Co., Ltd. Top-emission active matrix organic electroluminescent display device and method for fabricating the same
JP4016144B2 (ja) 2003-09-19 2007-12-05 ソニー株式会社 有機発光素子およびその製造方法ならびに表示装置
EP1672962B1 (en) * 2003-09-19 2012-06-20 Sony Corporation Organic light emitting device, manufacturing method thereof and display device using the organic light emitting device
KR100552972B1 (ko) * 2003-10-09 2006-02-15 삼성에스디아이 주식회사 평판표시장치 및 그의 제조방법
US7893438B2 (en) * 2003-10-16 2011-02-22 Samsung Mobile Display Co., Ltd. Organic light-emitting display device including a planarization pattern and method for manufacturing the same
JP3994994B2 (ja) * 2003-10-23 2007-10-24 セイコーエプソン株式会社 有機el装置の製造方法、有機el装置、電子機器
WO2005041249A2 (en) 2003-10-28 2005-05-06 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing optical film
TWI253870B (en) 2003-10-30 2006-04-21 Au Optronics Corp Active organic electroluminescence display and fabricating method thereof
CN100369290C (zh) * 2003-11-05 2008-02-13 友达光电股份有限公司 有源有机电致发光显示器及其制造方法
US7592207B2 (en) 2003-11-14 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
JP2005158372A (ja) * 2003-11-25 2005-06-16 Toyota Industries Corp エレクトロルミネセンス素子及び照明装置
KR100611147B1 (ko) * 2003-11-25 2006-08-09 삼성에스디아이 주식회사 유기전계발광표시장치
KR101026812B1 (ko) * 2003-11-28 2011-04-04 삼성전자주식회사 박막 트랜지스터 표시판 및 그의 제조 방법
KR100686343B1 (ko) * 2003-11-29 2007-02-22 삼성에스디아이 주식회사 유기 전계 발광 표시 장치
FR2864701B1 (fr) * 2003-12-26 2006-09-08 Lg Philips Co Ltd Dispositif d'affichage electroluminescent organique et son procede de fabrication
US10575376B2 (en) 2004-02-25 2020-02-25 Lynk Labs, Inc. AC light emitting diode and AC LED drive methods and apparatus
US10499465B2 (en) 2004-02-25 2019-12-03 Lynk Labs, Inc. High frequency multi-voltage and multi-brightness LED lighting devices and systems and methods of using same
US7619258B2 (en) * 2004-03-16 2009-11-17 Semiconductor Energy Laboratory Co., Ltd. Display device
JP4485828B2 (ja) * 2004-03-26 2010-06-23 財団法人国際科学振興財団 雰囲気制御された樹脂の接合装置,接合方法および接合された樹脂部材
US7764012B2 (en) * 2004-04-16 2010-07-27 Semiconductor Energy Laboratory Co., Ltd Light emitting device comprising reduced frame portion, manufacturing method with improve productivity thereof, and electronic apparatus
KR100652352B1 (ko) * 2004-05-10 2006-12-01 엘지.필립스 엘시디 주식회사 유기전계발광 소자 및 그 제조방법
JP4027914B2 (ja) 2004-05-21 2007-12-26 株式会社半導体エネルギー研究所 照明装置及びそれを用いた機器
US7733441B2 (en) 2004-06-03 2010-06-08 Semiconductor Energy Labortory Co., Ltd. Organic electroluminescent lighting system provided with an insulating layer containing fluorescent material
JP3956959B2 (ja) * 2004-06-24 2007-08-08 セイコーエプソン株式会社 有機el装置及び電子機器
KR101068395B1 (ko) * 2004-06-30 2011-09-28 엘지디스플레이 주식회사 상부발광 방식의 유기전계발광 소자 및 그 제조방법
JP4121514B2 (ja) * 2004-07-22 2008-07-23 シャープ株式会社 有機発光素子、及び、それを備えた表示装置
US8217396B2 (en) 2004-07-30 2012-07-10 Semiconductor Energy Laboratory Co., Ltd. Display device comprising electrode layer contacting wiring in the connection region and extending to pixel region
JP2006058332A (ja) * 2004-08-17 2006-03-02 Seiko Epson Corp 電気光学装置及び電子機器
US8350466B2 (en) * 2004-09-17 2013-01-08 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
CN1819300B (zh) 2004-09-17 2010-06-16 株式会社半导体能源研究所 发光器件
US7753751B2 (en) 2004-09-29 2010-07-13 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating the display device
JP4254675B2 (ja) * 2004-09-29 2009-04-15 カシオ計算機株式会社 ディスプレイパネル
JP4265515B2 (ja) 2004-09-29 2009-05-20 カシオ計算機株式会社 ディスプレイパネル
US8148895B2 (en) 2004-10-01 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the same
US8772783B2 (en) 2004-10-14 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Display device
JP4329740B2 (ja) * 2004-10-22 2009-09-09 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置の製造方法、及び有機エレクトロルミネッセンス装置
JP4561490B2 (ja) 2004-12-24 2010-10-13 株式会社豊田自動織機 エレクトロルミネッセンス素子
JP4428231B2 (ja) * 2004-12-27 2010-03-10 セイコーエプソン株式会社 カラーフィルタ基板、電気光学装置、および電子機器
US20060145598A1 (en) * 2004-12-30 2006-07-06 Macpherson Charles D Electronic devices and process for forming the same
US7956352B2 (en) * 2005-03-25 2011-06-07 Semiconductor Energy Laboratory Co., Ltd. Memory element comprising an organic compound and an insulator
US7888702B2 (en) * 2005-04-15 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the display device
JP2006318910A (ja) * 2005-05-11 2006-11-24 Lg Electronics Inc 電界発光素子及びその製造方法、電界発光表示装置及びその製造方法
GB0510282D0 (en) * 2005-05-20 2005-06-29 Cambridge Display Tech Ltd Top-electroluminescent devices comprising cathode bus bars
JP2007005173A (ja) * 2005-06-24 2007-01-11 Toshiba Matsushita Display Technology Co Ltd 表示装置
KR101219045B1 (ko) * 2005-06-29 2013-01-07 삼성디스플레이 주식회사 디스플레이장치 및 그 제조방법
KR100683791B1 (ko) * 2005-07-30 2007-02-20 삼성에스디아이 주식회사 박막 트랜지스터 기판 및 이를 구비한 평판 디스플레이장치
US7838347B2 (en) 2005-08-12 2010-11-23 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of display device
US7358526B2 (en) * 2005-09-28 2008-04-15 Osram Opto Semiconductors Gmbh OLED separating structures
TWI517378B (zh) 2005-10-17 2016-01-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP4513777B2 (ja) * 2005-11-14 2010-07-28 セイコーエプソン株式会社 発光装置および電子機器
KR20070054806A (ko) * 2005-11-24 2007-05-30 삼성전자주식회사 유기 발광 표시 장치
JP5250960B2 (ja) * 2006-01-24 2013-07-31 セイコーエプソン株式会社 発光装置および電子機器
KR101316558B1 (ko) * 2006-03-10 2013-10-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 메모리 소자 및 반도체 장치
JP2007287354A (ja) * 2006-04-12 2007-11-01 Hitachi Displays Ltd 有機el表示装置
KR100754483B1 (ko) * 2006-06-02 2007-09-03 엘지전자 주식회사 발광 소자 및 이를 제조하는 방법
JP5117001B2 (ja) * 2006-07-07 2013-01-09 株式会社ジャパンディスプレイイースト 有機el表示装置
US8053971B2 (en) * 2006-07-31 2011-11-08 Lg Display Co., Ltd. Organic light emitting device and method of fabricating the same
KR100805154B1 (ko) * 2006-09-15 2008-02-21 삼성에스디아이 주식회사 유기 발광 표시 장치 및 그 제조 방법
JP4245032B2 (ja) * 2006-10-03 2009-03-25 セイコーエプソン株式会社 発光装置および電子機器
JP2008170756A (ja) * 2007-01-12 2008-07-24 Sony Corp 表示装置
US7839083B2 (en) 2007-02-08 2010-11-23 Seiko Epson Corporation Light emitting device and electronic apparatus
JP5401784B2 (ja) * 2007-02-08 2014-01-29 セイコーエプソン株式会社 発光装置
JP5104274B2 (ja) * 2007-02-08 2012-12-19 セイコーエプソン株式会社 発光装置
KR100800495B1 (ko) * 2007-02-27 2008-02-04 삼성전자주식회사 반도체 장치의 제조방법
CN101262723B (zh) * 2007-03-05 2011-02-02 株式会社日立显示器 有机发光显示装置及其制造方法
US7791978B2 (en) * 2008-02-01 2010-09-07 International Business Machines Corporation Design structure of implementing power savings during addressing of DRAM architectures
KR100813851B1 (ko) * 2007-04-05 2008-03-17 삼성에스디아이 주식회사 투명 전도성 산화막인 캐소드를 구비하는 유기전계발광소자및 그의 제조방법
KR101452370B1 (ko) * 2007-04-25 2014-10-21 세이코 엡슨 가부시키가이샤 유기 el 장치
RU2457584C2 (ru) * 2007-04-27 2012-07-27 Конинклейке Филипс Электроникс Н.В. Органическое светоизлучающее устройство с анодированной металлизацией
US7915816B2 (en) 2007-05-14 2011-03-29 Sony Corporation Organic electroluminescence display device comprising auxiliary wiring
JP2009021213A (ja) * 2007-06-12 2009-01-29 Canon Inc 有機発光装置
US7738050B2 (en) 2007-07-06 2010-06-15 Semiconductor Energy Laboratory Co., Ltd Liquid crystal display device
TWI575293B (zh) * 2007-07-20 2017-03-21 半導體能源研究所股份有限公司 液晶顯示裝置
KR101432110B1 (ko) * 2007-09-11 2014-08-21 삼성디스플레이 주식회사 유기 발광 장치 및 그 제조 방법
WO2009052089A1 (en) * 2007-10-15 2009-04-23 E.I. Du Pont De Nemours And Company Backplane structures for solution processed electronic devices
US8772774B2 (en) 2007-12-14 2014-07-08 E. I. Du Pont De Nemours And Company Backplane structures for organic light emitting electronic devices using a TFT substrate
JP5056420B2 (ja) * 2008-01-10 2012-10-24 セイコーエプソン株式会社 有機elパネルおよびその製造方法
KR100964225B1 (ko) * 2008-03-19 2010-06-17 삼성모바일디스플레이주식회사 유기 발광 디스플레이 장치
JP5141354B2 (ja) * 2008-04-22 2013-02-13 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置および電子機器
JP5251239B2 (ja) * 2008-05-08 2013-07-31 セイコーエプソン株式会社 有機el装置、電子機器、有機el装置の製造方法
KR101824425B1 (ko) 2008-12-17 2018-02-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 전자 기기
WO2010070798A1 (ja) * 2008-12-18 2010-06-24 パナソニック株式会社 有機エレクトロルミネッセンス表示装置及びその製造方法
JP2010153127A (ja) * 2008-12-24 2010-07-08 Sony Corp 表示装置
TWI607670B (zh) 2009-01-08 2017-12-01 半導體能源研究所股份有限公司 發光裝置及電子裝置
KR101649225B1 (ko) * 2009-03-24 2016-08-18 엘지디스플레이 주식회사 유기전계발광 표시장치와 그 제조방법
KR20110008918A (ko) * 2009-07-21 2011-01-27 삼성모바일디스플레이주식회사 평판표시장치 및 그의 제조 방법
JP2012009420A (ja) 2010-05-21 2012-01-12 Semiconductor Energy Lab Co Ltd 発光装置及び照明装置
WO2012002104A1 (en) * 2010-06-30 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2012014759A1 (en) 2010-07-26 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and manufacturing method of light-emitting device
KR101410576B1 (ko) * 2010-08-11 2014-06-23 주식회사 엘지화학 유기 발광 소자
KR101223724B1 (ko) 2010-10-25 2013-01-17 삼성디스플레이 주식회사 전자소자용 보호막 및 그 제조 방법
KR101815255B1 (ko) * 2010-12-16 2018-01-08 삼성디스플레이 주식회사 유기전계발광표시장치 및 이에 적용되는 입력패드
JP5827885B2 (ja) 2010-12-24 2015-12-02 株式会社半導体エネルギー研究所 発光装置及び照明装置
KR20120095656A (ko) * 2011-02-21 2012-08-29 삼성전기주식회사 Led 구동장치
US8564192B2 (en) 2011-05-11 2013-10-22 Universal Display Corporation Process for fabricating OLED lighting panels
US8432095B2 (en) 2011-05-11 2013-04-30 Universal Display Corporation Process for fabricating metal bus lines for OLED lighting panels
KR101976065B1 (ko) 2011-05-11 2019-05-09 삼성디스플레이 주식회사 유기발광표시장치 및 이의 제조방법
TWI565119B (zh) 2011-05-27 2017-01-01 半導體能源研究所股份有限公司 發光裝置的製造方法及發光裝置
KR101407587B1 (ko) * 2011-06-02 2014-06-13 삼성디스플레이 주식회사 유기 발광 표시장치 및 그 제조방법
US9721998B2 (en) 2011-11-04 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
US9219245B2 (en) * 2011-11-18 2015-12-22 Samsung Display Co., Ltd. Organic light emitting diode display and manufacturing method thereof
WO2013114495A1 (ja) * 2012-02-01 2013-08-08 パナソニック株式会社 El表示装置およびそれに用いる配線基板
CN103311265B (zh) * 2012-03-08 2016-05-18 群康科技(深圳)有限公司 有机发光二极管显示面板及其制造方法
JP5907766B2 (ja) * 2012-03-14 2016-04-26 株式会社カネカ 発光デバイスおよび発光デバイスの製造方法
KR102082793B1 (ko) 2012-05-10 2020-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 제작 방법
JP5674707B2 (ja) * 2012-05-22 2015-02-25 株式会社東芝 表示装置
JP6214077B2 (ja) * 2012-07-31 2017-10-18 株式会社Joled 表示装置、表示装置の製造方法、電子機器および表示装置の駆動方法
KR102105287B1 (ko) 2012-08-01 2020-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP6076683B2 (ja) 2012-10-17 2017-02-08 株式会社半導体エネルギー研究所 発光装置
JP6204012B2 (ja) 2012-10-17 2017-09-27 株式会社半導体エネルギー研究所 発光装置
CN102891255A (zh) * 2012-10-18 2013-01-23 上海交通大学 一种柔性薄膜晶体管的绝缘层及其制备方法
US20140110764A1 (en) * 2012-10-19 2014-04-24 Intermolecular Inc. Method to control amorphous oxide layer formation at interfaces of thin film stacks for memory and logic components
KR20140050994A (ko) * 2012-10-22 2014-04-30 삼성디스플레이 주식회사 유기 발광 디스플레이 장치 및 그 제조 방법
US8981359B2 (en) * 2012-12-21 2015-03-17 Lg Display Co., Ltd. Organic light emitting diode display device and method of fabricating the same
JP6155020B2 (ja) 2012-12-21 2017-06-28 株式会社半導体エネルギー研究所 発光装置及びその製造方法
KR101993331B1 (ko) 2013-01-03 2019-06-27 삼성디스플레이 주식회사 유기발광표시장치 및 그 제조방법
JP6216125B2 (ja) 2013-02-12 2017-10-18 株式会社半導体エネルギー研究所 発光装置
US9088003B2 (en) * 2013-03-06 2015-07-21 Apple Inc. Reducing sheet resistance for common electrode in top emission organic light emitting diode display
JP6104649B2 (ja) 2013-03-08 2017-03-29 株式会社半導体エネルギー研究所 発光装置
US9224980B2 (en) 2013-03-28 2015-12-29 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP2014220121A (ja) 2013-05-08 2014-11-20 株式会社ジャパンディスプレイ 表示装置
JP6297795B2 (ja) * 2013-06-24 2018-03-20 東レ・ダウコーニング株式会社 潤滑被膜用塗料組成物
KR102131248B1 (ko) * 2013-07-04 2020-07-08 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR20150006125A (ko) * 2013-07-08 2015-01-16 삼성디스플레이 주식회사 유기 발광 표시장치 및 유기 발광 표시장치의 제조 방법
KR102117607B1 (ko) * 2013-07-23 2020-06-02 삼성디스플레이 주식회사 유기 발광 표시장치 및 그 제조방법
KR102381427B1 (ko) * 2013-07-23 2022-04-01 삼성디스플레이 주식회사 유기 발광 표시장치
KR102090276B1 (ko) * 2013-08-08 2020-03-18 삼성디스플레이 주식회사 유기 발광 표시 장치 및 광학 필름
JP6223070B2 (ja) * 2013-08-29 2017-11-01 株式会社ジャパンディスプレイ 有機el表示装置及び有機el表示装置の製造方法
KR20150027434A (ko) * 2013-09-03 2015-03-12 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR102218573B1 (ko) * 2013-09-30 2021-02-23 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
WO2015072143A1 (ja) * 2013-11-15 2015-05-21 株式会社Joled 有機el表示パネル、それを用いた表示装置および有機el表示パネルの製造方法
US9117785B2 (en) * 2013-11-22 2015-08-25 Samsung Display Co., Ltd. Display device and method of manufacturing the same
CN104733471A (zh) * 2013-12-23 2015-06-24 昆山国显光电有限公司 一种有机发光显示器件的阵列基板及其制备方法
KR102214476B1 (ko) * 2014-03-17 2021-02-10 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
JP6371094B2 (ja) * 2014-03-31 2018-08-08 株式会社ジャパンディスプレイ 有機el表示装置
JP6397654B2 (ja) * 2014-05-13 2018-09-26 株式会社ジャパンディスプレイ 有機el発光装置
KR102213223B1 (ko) * 2014-05-23 2021-02-08 삼성디스플레이 주식회사 유기발광 디스플레이 장치 및 그 제조방법
TWI790965B (zh) 2014-05-30 2023-01-21 日商半導體能源研究所股份有限公司 觸控面板
US9349922B2 (en) * 2014-08-25 2016-05-24 Boe Technology Group Co., Ltd. Mask, mask group, manufacturing method of pixels and pixel structure
JP2016081562A (ja) 2014-10-09 2016-05-16 ソニー株式会社 表示装置、表示装置の製造方法および電子機器
KR102299684B1 (ko) * 2014-10-28 2021-09-09 삼성디스플레이 주식회사 투명 유기 발광 표시 장치 및 투명 유기 발광 표시 장치의 제조 방법
KR102290785B1 (ko) * 2014-11-18 2021-08-19 삼성디스플레이 주식회사 유기 발광 표시 장치
KR102260809B1 (ko) * 2014-11-21 2021-06-04 엘지디스플레이 주식회사 유기발광표시장치 및 그 제조방법
CN104752444A (zh) * 2015-04-24 2015-07-01 合肥鑫晟光电科技有限公司 显示基板及其制备方法、显示面板和显示装置
KR102545253B1 (ko) 2015-05-28 2023-06-19 엘지디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR102609932B1 (ko) * 2015-09-09 2023-12-04 이노럭스 코포레이션 디스플레이 디바이스
US10270033B2 (en) 2015-10-26 2019-04-23 Oti Lumionics Inc. Method for patterning a coating on a surface and device including a patterned coating
KR102467353B1 (ko) * 2015-11-27 2022-11-15 삼성디스플레이 주식회사 표시 기판, 표시 기판의 제조 방법 및 표시 기판을 포함하는 표시 장치
CN105405864B (zh) * 2015-12-08 2019-05-17 昆山工研院新型平板显示技术中心有限公司 显示装置以及显示装置的封装方法
KR102456121B1 (ko) * 2015-12-15 2022-10-17 엘지디스플레이 주식회사 광 제어 장치, 그를 포함한 투명표시장치, 및 그의 제조방법
KR102513824B1 (ko) * 2015-12-30 2023-03-23 엘지디스플레이 주식회사 유기발광 표시장치
JP6677386B2 (ja) * 2016-02-16 2020-04-08 天馬微電子有限公司 表示装置および表示装置の製造方法
KR102569733B1 (ko) * 2016-06-01 2023-08-23 삼성디스플레이 주식회사 유기 발광 소자 및 그 제조 방법
JP6640034B2 (ja) 2016-06-17 2020-02-05 株式会社ジャパンディスプレイ 有機el表示装置の製造方法
US11152587B2 (en) 2016-08-15 2021-10-19 Oti Lumionics Inc. Light transmissive electrode for light emitting devices
CN106654043B (zh) * 2016-12-15 2019-01-04 武汉华星光电技术有限公司 Oled显示器的封装方法及oled显示器
US20190319221A1 (en) * 2016-12-21 2019-10-17 Sony Semiconductor Solutions Corporation Method of manufacturing display apparatus, display apparatus, and electronic apparatus
CN106941111A (zh) * 2017-03-14 2017-07-11 合肥鑫晟光电科技有限公司 阵列基板、阵列基板的制造方法以及显示装置
KR20230117645A (ko) 2017-04-26 2023-08-08 오티아이 루미오닉스 인크. 표면의 코팅을 패턴화하는 방법 및 패턴화된 코팅을포함하는 장치
CN110832660B (zh) 2017-05-17 2023-07-28 Oti照明公司 在图案化涂层上选择性沉积传导性涂层的方法和包括传导性涂层的装置
CN107256878A (zh) * 2017-06-09 2017-10-17 京东方科技集团股份有限公司 一种有机电致发光显示面板及其制备方法
CN107331786A (zh) * 2017-06-23 2017-11-07 安徽熙泰智能科技有限公司 Oled微显示器件阳极结构及该阳极结构的制造方法
JP6935244B2 (ja) * 2017-06-27 2021-09-15 株式会社ジャパンディスプレイ 表示装置、および表示装置の製造方法
CN107393945A (zh) * 2017-07-31 2017-11-24 京东方科技集团股份有限公司 一种有机发光二极管显示基板及其制作方法、显示装置
CN107331800B (zh) * 2017-08-16 2019-04-30 京东方科技集团股份有限公司 Oled显示基板及其制作方法、显示装置
CN107994059B (zh) * 2017-11-27 2020-05-26 京东方科技集团股份有限公司 阵列基板及其制造方法
KR102410500B1 (ko) 2017-11-30 2022-06-16 엘지디스플레이 주식회사 전계 발광 표시장치
KR102441681B1 (ko) * 2017-12-05 2022-09-07 엘지디스플레이 주식회사 조명 장치용 oled 패널 및 그 제조 방법
US11751415B2 (en) 2018-02-02 2023-09-05 Oti Lumionics Inc. Materials for forming a nucleation-inhibiting coating and devices incorporating same
KR102480092B1 (ko) * 2018-04-30 2022-12-23 삼성디스플레이 주식회사 디스플레이 장치
WO2019215591A1 (en) 2018-05-07 2019-11-14 Oti Lumionics Inc. Method for providing an auxiliary electrode and device including an auxiliary electrode
CN115188791A (zh) * 2018-06-07 2022-10-14 京东方科技集团股份有限公司 一种oled基板及显示面板
CN108919571B (zh) * 2018-07-11 2021-07-27 业成科技(成都)有限公司 显示面板
CN109243305B (zh) * 2018-09-17 2021-10-12 京东方科技集团股份有限公司 显示面板、显示装置和显示面板的制造方法
JP7378923B2 (ja) * 2018-10-31 2023-11-14 キヤノン株式会社 半導体装置、モジュール、カメラおよび機器
CN109546000A (zh) 2018-11-22 2019-03-29 京东方科技集团股份有限公司 一种显示基板、其制作方法、显示面板及显示装置
CN111384084B (zh) * 2018-12-27 2022-11-08 武汉华星光电半导体显示技术有限公司 显示面板和智能终端
CN109728065B (zh) * 2019-01-09 2021-11-09 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
KR20200093737A (ko) * 2019-01-28 2020-08-06 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
KR20210149058A (ko) 2019-03-07 2021-12-08 오티아이 루미오닉스 인크. 핵생성 억제 코팅물 형성용 재료 및 이를 포함하는 디바이스
CN113661782A (zh) * 2019-03-25 2021-11-16 夏普株式会社 显示设备
US20220173171A1 (en) * 2019-04-08 2022-06-02 Sharp Kabushiki Kaisha Display device
WO2020208774A1 (ja) * 2019-04-11 2020-10-15 シャープ株式会社 発光素子および表示装置
US11309355B2 (en) * 2019-04-26 2022-04-19 Innolux Corporation Display device
CN109994536A (zh) * 2019-04-28 2019-07-09 武汉华星光电半导体显示技术有限公司 Tft阵列基板及oled显示面板
CN110416262B (zh) * 2019-05-09 2021-09-28 京东方科技集团股份有限公司 Oled显示屏、显示面板及其制造方法
CN110098247A (zh) * 2019-05-31 2019-08-06 京东方科技集团股份有限公司 显示背板及其制作方法和显示装置
US11832473B2 (en) 2019-06-26 2023-11-28 Oti Lumionics Inc. Optoelectronic device including light transmissive regions, with light diffraction characteristics
CN114097102B (zh) 2019-06-26 2023-11-03 Oti照明公司 包括具有光衍射特征的光透射区域的光电设备
CN110416429A (zh) 2019-07-23 2019-11-05 深圳市华星光电半导体显示技术有限公司 有机发光显示器件及其制作方法
CN114342068A (zh) 2019-08-09 2022-04-12 Oti照明公司 包含辅助电极和分区的光电子装置
KR20210053395A (ko) * 2019-11-01 2021-05-12 삼성디스플레이 주식회사 표시 장치
KR102651057B1 (ko) * 2020-05-26 2024-03-26 삼성디스플레이 주식회사 유기 발광 표시장치
KR20230116914A (ko) 2020-12-07 2023-08-04 오티아이 루미오닉스 인크. 핵 생성 억제 코팅 및 하부 금속 코팅을 사용한 전도성 증착 층의 패턴화
CN113629207B (zh) * 2021-07-20 2023-04-07 武汉华星光电半导体显示技术有限公司 显示面板及显示装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5929474A (en) * 1997-03-10 1999-07-27 Motorola, Inc. Active matrix OED array
US20010043046A1 (en) * 2000-05-08 2001-11-22 Takeshi Fukunaga Luminescent apparatus and method of manufacturing the same

Family Cites Families (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US158835A (en) * 1875-01-19 Improvement in mortising-tools
JPS63259994A (ja) 1987-04-15 1988-10-27 株式会社リコー 薄膜発光素子
JPS6443994A (en) 1987-08-10 1989-02-16 Tosoh Corp Membranous el panel
JP2584884B2 (ja) 1990-05-31 1997-02-26 株式会社日立製作所 配線基板
JPH04249092A (ja) * 1991-02-06 1992-09-04 Pioneer Electron Corp El表示装置
JP3170542B2 (ja) 1993-12-08 2001-05-28 出光興産株式会社 有機el素子
JPH07166160A (ja) 1993-12-16 1995-06-27 Toppan Printing Co Ltd 有機薄膜el素子
JPH0987828A (ja) 1995-09-28 1997-03-31 Murata Mfg Co Ltd 電子部品の電極を形成する方法およびそれに用いる装置
JP3332773B2 (ja) * 1996-03-15 2002-10-07 シャープ株式会社 アクティブマトリクス基板およびアクティブマトリクス基板の製造方法
US6037712A (en) * 1996-06-10 2000-03-14 Tdk Corporation Organic electroluminescence display device and producing method thereof
US6072450A (en) * 1996-11-28 2000-06-06 Casio Computer Co., Ltd. Display apparatus
JP3392672B2 (ja) * 1996-11-29 2003-03-31 三洋電機株式会社 表示装置
JP3463971B2 (ja) 1996-12-26 2003-11-05 出光興産株式会社 有機アクティブel発光装置
JPH10189285A (ja) 1996-12-27 1998-07-21 Shimadzu Corp 医用x線管装置
US5952778A (en) 1997-03-18 1999-09-14 International Business Machines Corporation Encapsulated organic light emitting device
JPH10330911A (ja) 1997-06-05 1998-12-15 Toray Ind Inc シャドーマスクおよびその製造方法
JPH1126155A (ja) 1997-06-30 1999-01-29 Mitsui Chem Inc エレクトロルミネッセンス素子用保護フィルム
US6072278A (en) * 1997-08-06 2000-06-06 Alliedsignal Inc. High capacitance pixel for electronic displays
JP3830238B2 (ja) 1997-08-29 2006-10-04 セイコーエプソン株式会社 アクティブマトリクス型装置
US6208394B1 (en) 1997-11-27 2001-03-27 Sharp Kabushiki Kaisha LCD device and method for fabricating the same having color filters and a resinous insulating black matrix on opposite sides of a counter electrode on the same substrate
US6140766A (en) * 1997-12-27 2000-10-31 Hokuriku Electric Industry Co., Ltd. Organic EL device
JP3646510B2 (ja) 1998-03-18 2005-05-11 セイコーエプソン株式会社 薄膜形成方法、表示装置およびカラーフィルタ
JP3266573B2 (ja) * 1998-04-08 2002-03-18 出光興産株式会社 有機エレクトロルミネッセンス素子
JP3175712B2 (ja) 1998-10-23 2001-06-11 日本電気株式会社 Dlc保護膜と該保護膜を用いた有機el素子及びそれらの製造方法
JP2000208253A (ja) 1999-01-19 2000-07-28 Denso Corp 有機el素子およびその製造方法
JP2000223265A (ja) 1999-02-02 2000-08-11 Toray Ind Inc 発光素子
JP2000231985A (ja) 1999-02-12 2000-08-22 Denso Corp 有機el素子
JP3411864B2 (ja) * 1999-06-11 2003-06-03 ティーディーケイ株式会社 有機el表示装置
JP2001057287A (ja) 1999-08-20 2001-02-27 Tdk Corp 有機el素子
JP2001102169A (ja) * 1999-10-01 2001-04-13 Sanyo Electric Co Ltd El表示装置
TW480722B (en) 1999-10-12 2002-03-21 Semiconductor Energy Lab Manufacturing method of electro-optical device
JP4780826B2 (ja) 1999-10-12 2011-09-28 株式会社半導体エネルギー研究所 電気光学装置の作製方法
JP3809758B2 (ja) * 1999-10-28 2006-08-16 ソニー株式会社 表示装置及び表示装置の製造方法
EP1096568A3 (en) 1999-10-28 2007-10-24 Sony Corporation Display apparatus and method for fabricating the same
US6384427B1 (en) * 1999-10-29 2002-05-07 Semiconductor Energy Laboratory Co., Ltd. Electronic device
TW511298B (en) 1999-12-15 2002-11-21 Semiconductor Energy Lab EL display device
JP2001176657A (ja) 1999-12-16 2001-06-29 Toppan Printing Co Ltd 有機エレクトロルミネッセンス表示素子用基板および有機エレクトロルミネッセンス表示素子
TW494447B (en) 2000-02-01 2002-07-11 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP3967081B2 (ja) 2000-02-03 2007-08-29 株式会社半導体エネルギー研究所 発光装置及びその作製方法
US6559594B2 (en) 2000-02-03 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
TW495808B (en) 2000-02-04 2002-07-21 Semiconductor Energy Lab Thin film formation apparatus and method of manufacturing self-light-emitting device using thin film formation apparatus
JP4434411B2 (ja) * 2000-02-16 2010-03-17 出光興産株式会社 アクティブ駆動型有機el発光装置およびその製造方法
JP2001313172A (ja) * 2000-02-25 2001-11-09 Seiko Epson Corp 有機エレクトロルミネッセンス白色光源、及びその製造方法
US6869635B2 (en) * 2000-02-25 2005-03-22 Seiko Epson Corporation Organic electroluminescence device and manufacturing method therefor
JP2001244070A (ja) * 2000-02-29 2001-09-07 Optrex Corp Elパネル
TW495854B (en) 2000-03-06 2002-07-21 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP4836339B2 (ja) * 2000-03-06 2011-12-14 株式会社半導体エネルギー研究所 半導体表示装置及びその作製方法
US6995736B2 (en) 2000-03-07 2006-02-07 Idemitsu Kosan Co., Ltd. Active-driving type organic EL display device, and a method of producing the same
JP4542659B2 (ja) 2000-03-07 2010-09-15 出光興産株式会社 アクティブ駆動型有機el表示装置およびその製造方法
JP2001254169A (ja) 2000-03-13 2001-09-18 Optonix Seimitsu:Kk 蒸着用金属マスクおよび蒸着用金属マスク製造方法
JP4637391B2 (ja) 2000-03-27 2011-02-23 株式会社半導体エネルギー研究所 発光装置の作製方法
US7301276B2 (en) * 2000-03-27 2007-11-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting apparatus and method of manufacturing the same
TW484238B (en) * 2000-03-27 2002-04-21 Semiconductor Energy Lab Light emitting device and a method of manufacturing the same
JP4693262B2 (ja) 2000-03-27 2011-06-01 株式会社半導体エネルギー研究所 パッシブマトリクス型の発光装置
JP4405638B2 (ja) * 2000-04-10 2010-01-27 三星モバイルディスプレイ株式會社 ディスプレイおよびその製造方法
TW493282B (en) 2000-04-17 2002-07-01 Semiconductor Energy Lab Self-luminous device and electric machine using the same
JP4889872B2 (ja) 2000-04-17 2012-03-07 株式会社半導体エネルギー研究所 発光装置及びそれを用いた電気器具
TW521237B (en) 2000-04-18 2003-02-21 Semiconductor Energy Lab Light emitting device
JP4869491B2 (ja) 2000-04-18 2012-02-08 株式会社半導体エネルギー研究所 発光装置
US6847341B2 (en) 2000-04-19 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Electronic device and method of driving the same
JP2002006808A (ja) 2000-04-19 2002-01-11 Semiconductor Energy Lab Co Ltd 電子装置およびその駆動方法
JP4827313B2 (ja) * 2000-04-25 2011-11-30 株式会社半導体エネルギー研究所 発光装置の作製方法
JP2002014343A (ja) 2000-04-26 2002-01-18 Nec Corp 液晶表示装置、発光素子、液晶表示装置の製造方法
TW531901B (en) * 2000-04-27 2003-05-11 Semiconductor Energy Lab Light emitting device
JP4152603B2 (ja) 2000-04-27 2008-09-17 株式会社半導体エネルギー研究所 発光装置
JP3936151B2 (ja) 2000-05-08 2007-06-27 双葉電子工業株式会社 有機el素子
JP3446099B2 (ja) 2000-05-10 2003-09-16 ハリソン東芝ライティング株式会社 放電灯点灯装置
JP2001326070A (ja) 2000-05-15 2001-11-22 Denso Corp 有機el素子
GB0014961D0 (en) * 2000-06-20 2000-08-09 Koninkl Philips Electronics Nv Light-emitting matrix array display devices with light sensing elements
KR100462712B1 (ko) 2000-08-10 2004-12-20 마쯔시다덴기산교 가부시키가이샤 유기전자장치와 그 제조방법과 그 동작방법 및 그것을 사용한 표시장치
US6605826B2 (en) 2000-08-18 2003-08-12 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and display device
US6739931B2 (en) 2000-09-18 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating the display device
US6617186B2 (en) 2000-09-25 2003-09-09 Dai Nippon Printing Co., Ltd. Method for producing electroluminescent element
KR100763137B1 (ko) * 2000-12-29 2007-10-02 엘지.필립스 엘시디 주식회사 엑스-선 검출소자 및 그의 제조방법
US6858480B2 (en) 2001-01-18 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP3702859B2 (ja) * 2001-04-16 2005-10-05 セイコーエプソン株式会社 電気光学装置及び電子機器
JP2002318553A (ja) 2001-04-20 2002-10-31 Toshiba Corp 自己発光型表示装置
TWI257496B (en) 2001-04-20 2006-07-01 Toshiba Corp Display device and method of manufacturing the same
JP2002318556A (ja) 2001-04-20 2002-10-31 Toshiba Corp アクティブマトリクス型平面表示装置およびその製造方法
US7483001B2 (en) * 2001-11-21 2009-01-27 Seiko Epson Corporation Active matrix substrate, electro-optical device, and electronic device
SG143063A1 (en) * 2002-01-24 2008-06-27 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
EP1343206B1 (en) 2002-03-07 2016-10-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting apparatus, electronic apparatus, illuminating device and method of fabricating the light emitting apparatus
US6812637B2 (en) 2003-03-13 2004-11-02 Eastman Kodak Company OLED display with auxiliary electrode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5929474A (en) * 1997-03-10 1999-07-27 Motorola, Inc. Active matrix OED array
US20010043046A1 (en) * 2000-05-08 2001-11-22 Takeshi Fukunaga Luminescent apparatus and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110635066A (zh) * 2019-09-26 2019-12-31 京东方科技集团股份有限公司 一种透明显示基板及其制作方法、透明显示装置
US11342530B2 (en) 2019-09-26 2022-05-24 Boe Technology Group Co., Ltd. Transparent display substrate and manufacturing method thereof, transparent display device

Also Published As

Publication number Publication date
US8089066B2 (en) 2012-01-03
JP2021144956A (ja) 2021-09-24
JP2019194996A (ja) 2019-11-07
TWI277359B (en) 2007-03-21
CN1434668A (zh) 2003-08-06
KR20030064303A (ko) 2003-07-31
US20070114921A1 (en) 2007-05-24
JP2012094538A (ja) 2012-05-17
EP2509109A3 (en) 2014-05-28
CN100438063C (zh) 2008-11-26
CN102214796A (zh) 2011-10-12
JP6074389B2 (ja) 2017-02-01
EP1331666A2 (en) 2003-07-30
SG143063A1 (en) 2008-06-27
TW200617822A (en) 2006-06-01
US20150008458A1 (en) 2015-01-08
US20050012105A1 (en) 2005-01-20
JP2013175470A (ja) 2013-09-05
US7265391B2 (en) 2007-09-04
CN101369634A (zh) 2009-02-18
US7692186B2 (en) 2010-04-06
JP5712245B2 (ja) 2015-05-07
EP2509109A2 (en) 2012-10-10
JP5586636B2 (ja) 2014-09-10
JP2017212227A (ja) 2017-11-30
EP1331666B1 (en) 2014-11-26
US8779467B2 (en) 2014-07-15
US20160218160A1 (en) 2016-07-28
TW200302439A (en) 2003-08-01
US20100230664A1 (en) 2010-09-16
JP2010153397A (ja) 2010-07-08
CN101369634B (zh) 2011-07-06
US6781162B2 (en) 2004-08-24
JP2014197558A (ja) 2014-10-16
CN102214796B (zh) 2014-12-10
JP2016015339A (ja) 2016-01-28
EP1331666A3 (en) 2009-10-21
US20120097994A1 (en) 2012-04-26
KR100979925B1 (ko) 2010-09-03
US9312323B2 (en) 2016-04-12
US9627459B2 (en) 2017-04-18
TWI278255B (en) 2007-04-01
US20030137325A1 (en) 2003-07-24

Similar Documents

Publication Publication Date Title
SG126714A1 (en) Light emitting device and method of manufacturing the same
EP1489671A3 (en) Method of making a top-emitting oled device having improved power distribution
TWI268731B (en) Light-emitting device, method of manufacturing the same, and display unit
JP2001035657A5 (ja) エレクトロルミネッセンス表示装置及びその作製方法
EP0845924A3 (en) Organic electroluminescent device
TW200501827A (en) Light-emitting devices with fullerene layer
JP2001291595A5 (ja)
US20130248889A1 (en) Light emitting device
TW200711197A (en) Electro-optical device and image forming device
TW200615887A (en) Display and array substrate
TW200733022A (en) Emissive device and electronic apparatus
TW200735704A (en) Electro-optical device with a low refractivity multilayer film
TW200509744A (en) Method of manufacturing laminated structure, laminated structure, display device and display unit
WO2003030274A1 (fr) Dispositif emetteur de lumiere et procede de fabrication associe
TW200627676A (en) Contact and omni directional reflective mirror for flip chipped light emitting devices
TW200509748A (en) Organic electroluminescence device
EP1256989A3 (en) Organic light emitting diode with high contrast ratio
TW200620704A (en) Nitride-based compound semiconductor light emitting device
WO2004064112A3 (en) Backlight polar organic light-emitting device
CN101599500B (zh) 有机发光二极管显示器件
DE69320960T2 (de) Thermisch stabile elektrodenstruktur mit niedrigem widerstand für elektrolumineszente vorrichtungen
TW200701508A (en) A semiconductor light-emitting device
TW200607083A (en) Display device and method of manufacturing the same
TWI375338B (en) Opto-electronic device
TW200518352A (en) Electro-active device having metal-containing layer