KR950021435A - 수지 봉지형 반도체 장치 및 그 제조 방법 - Google Patents

수지 봉지형 반도체 장치 및 그 제조 방법 Download PDF

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KR950021435A
KR950021435A KR1019940034902A KR19940034902A KR950021435A KR 950021435 A KR950021435 A KR 950021435A KR 1019940034902 A KR1019940034902 A KR 1019940034902A KR 19940034902 A KR19940034902 A KR 19940034902A KR 950021435 A KR950021435 A KR 950021435A
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resin
semiconductor device
semiconductor element
heat dissipation
heat dissipating
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KR1019940034902A
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KR100296664B1 (ko
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테츠야 오츠키
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야스카와 히데아키
세이코 엡슨 가부시키가이샤
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Abstract

본 발명은 높은 방열 특성을 가지는 수지 봉지형 반도체 장치 및 그 제조방법에 관한 것으로, 본 발명에 따른 수지 봉지형 반도체 장치 (100)는 반도체 소자를 설치하기 위한 소자 설치면 (16)를 가지는 제 1방열부 (10)와, 이 제1방열부(10)의 상기 소자 설치면(16)에 접합된 반도체 소자(30)와, 이 반도체 소자(30)에 대해서 떨어져서 설치된 복수의 리드 (32)와, 이들 리드 (32)와 상기 반도체 소자 (30)의 전극 베드 (30a)를 전기적으로 접속하는 와이어(34)와, 상기 제1방열부(10)에 대향해서 위치하고, 상기 반도체 소자(30), 상기 리드(32) 및 상기 와이어(34)와 접촉하지 않는 상태로 설치된 제2방열부 (20)와, 상기 제1방열부 (10)와 상기 리드 (32)와의 사이에 설치된 제1 절연부(40)와, 상기 제2방열부(20)와 상기 리드(32) 사이에 설치된 제2절연부(44)와, 적어도 상기 제1, 제2방열부(10, 20) 및 상기 제1, 제2절연부(40, 44)의 바깥측에 형성된 수지 봉지부(57)를 포함하고, 상기 제1, 2방열부(10, 20)의 면 (14a) (24a)는 각각 수지 봉지부(50)로 부터 노출되어 있는 것을 특징으로 한다.

Description

수지 봉지형 반도체 장치 및 그 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 제1실시예의 수지 봉지형 반도체 장치를 개략적으로 나타낸 종단면도이다.
제2도는 제1도에 있어서 수지 봉지부를 제거한 상태로 A-A선을 따라서 본 반도체 장치의 평면도이다,
제4도는 본 발명의 제2실시예에 따른 반도체 장치를 개략적으로 나타낸 종단면도이다,
제5도는 제4도에 나타낸 반도체 장치의 제2방열부를 개략적으로 나타낸 평면도이다.
제7도는 본 발명에 따른 제3실시예의 수지 봉지형 반도체 장치를 개략적으로 나타낸 종단면도이다.
제9도는 본 발명의 방열부의 변형예를 개략적으로 나타낸 종단면도이다.

Claims (17)

  1. 반도체 소자를 설치하기 위한 소자 설치면를 가지는 제1방열부와, 이 제1방열부의 상기 소자 설치면에 접합된 반도체 소자와, 이 반도체 소자에 대해서 떨어져서 설치된 복수의 리드와, 이들 리드와 상기 반도체 소자의 전극부를 전기적으로 접속하는 와이어와, 상기 제1방열부에 대향해서 위치하고, 상기 반도체 소자, 상기 리드 및 상기 와이어와 접촉하지 않는 상태로 설치된 제2방열부와, 상기 제1방열부와 상기 리드와의 사이에 설치된 제1절연부와, 상기 제2방열부와 상기 리드와의 사이에 설치된 제2절연부와, 적어도 상기 제1, 제2방열부 및 상기 제1, 제2절연부의 바깥측에 형성된 수지 봉지부를 포함하는 것을 특징으로 하는 수지 봉지형 반도체 장치.
  2. 제1항에 있어서, 상기 제1절연부는 상기 제1방열부의 한쪽 면에 연속적으로 형성되며, 상기 제2절연부는 상기 제2방열부의 한쪽 면에 있어서 연속적으로 형성되며, 이들 절연부 및 방열부에 의해서 둘러싸인 공간내에 상기 반도체 소자, 상기 와이어 및 상기 리드의 선단부가 수용되어 있는 것을 특징으로 하는 수지 봉지형 반도체 장치.
  3. 제2항에 있어서, 상기 공간내에 적어도 상기 반도체 소자의 소자 형성면은 수지층에 의해 피복되어 있는 것을 특징으로 하는 수지 봉지형 반도체 장치.
  4. 제3항에 있어서, 상기 방열부중 적어도 한쪽은 수지 주입용 구멍을 가지며, 이 구멍을 통하여, 상기 공간내에 거의 완전하게 수지층이 봉압되어 있는 것을 특징으로 하는 수지 봉지형 반도체 장치.
  5. 제3항 또는 제4항에 있어서, 상기 수지층은 1. 0×10-6~2.0×10-5cm/℃의 선팽창계수를 가지는 재료로 이루어진 것을 특징으로 하는 수지 봉지형 반도체 장치.
  6. 제1항 내지 제5항중 어느 한 항에 있어서, 상기 수지 봉지부는 1.0×10-5~2.0×10-5cm/℃의 선팽창계수를 가지는 재료로 이루어진 것을 특징으로 하는 수지 봉지형 반도체 장치.
  7. 제6항에 있어서, 상기 수지 봉지부는 1.3×10-5~1.6×10-5cm/℃의 선팽창계수를 가지는 재료로 이루어진 것을 특징으로 하는 수지 봉지형 반도체 장치.
  8. 제1항 내지 제7항중 어느 한항에 있어서, 상기 방열부중 적어도 한쪽은 직경이 큰 기부와 이 기부보다 직경이 작은 돌출부를 가지며, 상기 돌출부는 외부로 노출되어 있는 면을 가지는 것을 특징으로 하는 수지 봉지형 반도체 장치.
  9. 제1항 내지 제8항중 어느 한항에 있어서, 상기 방열부중 적어도 한쪽은 상기 반도체 소자를 향하는 쪽의 면에 연속하는 가장자리 돌출부를 가지며, 이 가장자리 돌출부상에 상기 절연부가 형성된 것을 특징으로 하는 수지 봉지형 반도체 장치.
  10. 제8항 또는 제9항에 있어서, 상기 방열부중 적어도 한쪽은 상기 외부로 노출되어 있는 면에 상기 방열부와 다른 재료로 이루어진 부식 방지층을 가지는 것을 특징으로 하는 수지 봉지형 반도체 장치.
  11. 제8항 내지 제10항중 어느 한 항에 있어서, 상기 방열부중 적어도 한쪽은 상기 외부로 노출되어 있는 면에 오목부를 가진 것을 특징으로 하는 수지 봉지형 반도체 장치.
  12. 제1방열부의 소자 설치면에 제1절연부를 통하여 복수의 리드를 포함하는 리드 프레임을 고정함과 동시에 상기 소자 설치면상에 반도체 소자를 접합하며, 또한, 상기 리드와 상기 반도체 소자의 전극부를 와이어에 의해서 전기적으로 접속하는 제1공정 ; 상기 제1절연부에 대응하는 위치에 제2절연부를 설치함과 동시에 이 제2절연부를 통하여 제2방열부를 고정함에 의해 상기 제1, 제2방열부 및 상기 제1, 제2절연부로 둘러싸인 공간내에 적어도, 상기 반도체 소자, 상기 와이어 및 상기 리드의 선단부를 수용하는 제2공정; 수지의 몰딩에 의해 적어도 상기 제1, 제2방열부 및 상기 제1, 제2절연부의 바깥측의 수지 봉지부를 형성하는 제3공정으로 이루어지는 것을 특징으로 하는 수지 봉지형 반도체 장치의 제조방법.
  13. 제12항에 있어서, 상기 방열부중 적어도 한쪽은 수지 주입용 구멍을 가지며, 상기 제2공정 후에 상기 구멍을 통하여 상기 공간내에 수지를 넣어서, 적어도 상기 반도체 소자의 소자 형성면을 덮는 수지층을 형성하는 공정을 더 포함하는 것을 특징으로 하는 수지 봉지형 반도체 장치의 제조방법.
  14. 제13항에 있어서, 상기 수지층은 상기 공간내를 거의 완전하게 채우는 상태로 형성되는 것을 특징으로 하는 수지 봉지형 반도체 장치의 제조방법.
  15. 제12항에 있어서, 상기 제1공정 (a)후에 적어도 상기 반도체 소자의 소자 형성면을 덮는 수지층을 형성하는 공정을 더 포함하는 것을 특징으로 하는 수지 봉지형 반도체 장치의 제조방법.
  16. 제13항 내지 제15항중 어느 한 항에 있어서, 상기 수지층은 1.0×10-62.0×10-5cm/℃의 선팽창계수를 가지는 것을 특징으로 하는 수지 봉지형 반도체 장치의 제조 방법.
  17. 제12항 내지 제16항중 어느 한 항에 있어서, 상기 제3공정에 있어서, 상기 제1, 제2방열부는 각각 일부가 노출된 상태로 몰딩이 행해지는 것을 특징으로 하는 수지 봉지형 반도체 장치의 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940034902A 1993-12-16 1994-12-15 수지봉지형반도체장치및그제조방법 KR100296664B1 (ko)

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