CN112216658A - 具有适应各种管芯尺寸的引线框架的半导体器件 - Google Patents

具有适应各种管芯尺寸的引线框架的半导体器件 Download PDF

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CN112216658A
CN112216658A CN201910619333.5A CN201910619333A CN112216658A CN 112216658 A CN112216658 A CN 112216658A CN 201910619333 A CN201910619333 A CN 201910619333A CN 112216658 A CN112216658 A CN 112216658A
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leads
die
heat sink
semiconductor device
lead
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葛友
赖明光
王志杰
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NXP USA Inc
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Abstract

本公开涉及具有适应各种管芯尺寸的引线框架的半导体器件。半导体器件使用具有环绕中央开口的引线的引线框架来组装。引线具有接近中央开口的近端部以及与中央开口间隔开的远端部。热沉贴附于引线的底表面，而半导体管芯贴附于引线的顶表面，其中管芯被支撑于引线的近端部上并且横跨中央开口。接合线将在管芯的有源表面上的电极与引线电连接。密封剂覆盖接合线以及至少管芯和引线的顶表面。引线的远端部被暴露以允许与管芯的外部电通信。

Description

具有适应各种管芯尺寸的引线框架的半导体器件
技术领域
本发明涉及集成电路(IC)封装，并且更特别地涉及能够适应各种尺寸的管芯的用于集成电路器件的引线框架。
背景技术
一直都有的需求是降低组装半导体器件的成本，然而同时还有的需求是适应更大的管芯，允许更多的I/O以及满足所有电学要求。因此，具有有着良好的电学特性和机械特性的低成本的封装设计将是有利的。
附图说明
根据以下的详细描述、所附权利要求及附图，本发明的各个方面、特征和优点将变得清楚，在附图中，相似的附图标记指示类似的或相同的元件。附图中所示的某些元件可以被放大，并且因而可以不按照比例绘制，以便更清楚地呈现本发明。
图1A是根据本发明的一个实施例的半导体器件的放大的截面侧视图，并且图1B和1C分别是图1A的半导体器件的顶视平面图和底视平面图；
图2是根据本发明的一个实施例的组装半导体器件的方法的流程图；
图3A和3B分别是根据本发明的一个实施例的用于组装半导体器件的引线框架的顶视平面图和底视平面图；
图4A是图1A的半导体器件的热沉的顶视平面图，而图4B是示出贴附于图3A和3B的引线框架的底面的图4A的热沉的顶视平面图；
图5示出了将一片胶带施加于图4B的引线框架和热沉组件的底部的步骤；
图6A示出了贴附至根据本发明的一个实施例的图5的引线框架和热沉组件的顶面上的引线的半导体管芯，而图6B示出了根据本发明的另一个实施例的贴附至图5的引线框架和热沉组件的顶面上的引线的更大的半导体管芯；以及
图7A和7B分别是示出在图6A的组件上执行的图2的方法的线接合步骤的顶视图和侧视图，而图7C是示出根据本发明的一个实施例的在具有贴附于热沉的底表面的小管芯的引线框架和热沉组件上执行的图2的方法的线接合步骤的侧视图。
具体实施方式
本文公开了本发明的详细说明性实施例。但是，本文所公开的具体结构和功能细节只是代表性的，是为了描述本发明的示例实施例。本发明的实施例可以用许多可替换的形式来实现，而不应被理解为仅限定于本文所阐明的实施例。此外，本文所使用的术语只是为了描述特定的实施例，而并非意指对本发明的示例实施例的限定。
如本文所使用的，单数形式“一(a)”、“一个(an)”和“该(the)”意指同样包括复数形式，除非上下文另有明确说明。还应当理解，词语“包括”、“包含”、“具有”、“有着”、“含有”和/或“涵盖”指明存在所述的特征、步骤或构件，但并不排除存在或添加一个或多个别的特征、步骤或构件。还应当注意，在一些可替换的实施例中，所指出的功能/行为可以不按照附图所指出的顺序出现。
在一个实施例中，本发明提供了一种半导体器件，包括具有环绕中央管芯接收区的多个引线的引线框架，其中引线具有靠近管芯接收区的近端部以及与管芯接收区间隔开的远端部。热沉贴附于多个引线的底表面并且半导体管芯贴附于多个引线的顶表面。管芯被支撑在引线的近端部上并且覆盖管芯接收区。接合线将在管芯的有源表面上的电极与多个引线电连接。密封剂覆盖电连接以及至少引线和管芯的顶表面。引线的远端部被暴露以允许与管芯的外部电通信，并且热沉的底表面被暴露以提供良好的热性能。
在另一个实施例中，本发明提供了一种组装半导体器件的方法，包括以下步骤：提供具有环绕中央管芯接收区的多个引线的引线框架，其中引线具有靠近管芯接收区的近端部以及与管芯接收区间隔开的远端部；将热沉贴附于多个引线的底表面并且然后翻转引线框架和热沉组件，以及将半导体管芯贴附于多个引线的顶表面，其中管芯被支撑在引线的近端部上并且覆盖管芯接收区。该方法还包括将在管芯的有源表面上的电极与多个引线电连接，并且覆盖电连接以及至少管芯和引线的顶表面，其中引线的远端部被暴露以允许与管芯的外部电通信。
现在参照图1A、1B和1C，示出了根据本发明的一个实施例的半导体器件100的截面侧视图以及顶视图和底视图。
半导体器件100包括包含环绕中央开口104的多个引线102的引线框架。引线102具有接近中央开口104的近端部106以及与中央开口104间隔开的远端部108。尽管在图1A中并不是显而易见的，但是中央开口104总体上是圆形的(见图3A和3B)。引线框架优选地由铜片形成并且可以部分或完全地涂覆有防止腐蚀或增强附着力的一种或多种金属或金属合金。在当前优选的实施例中，引线102的底面是半蚀刻的。也就是，引线的近端部106和中央区域110被蚀刻以容纳热沉112，如同下文所描述的。
热沉112被调整尺寸以适配在引线102的蚀刻部分内，使得热沉112的顶表面贴附于多个引线102的底表面，并且优选地，热沉112的相对的底表面与引线102的远端部108的底表面是齐平或平整的。热沉112同样可以由铜形成，并且如图1C所示，优选地具有多个孔或穿孔114。穿孔114有助于在模制期间防止空隙，并且还有助于将模制化合物固定于其他构件(即，模制锁(mold lock))。图1C示出了3x3阵列的穿孔114。但是，也可以有更多的或更少的穿孔，并且它们不需要形成阵列或者具有同等数量的行和列的阵列。在优选的实施例中，热沉112以粘合剂胶带或管芯贴附膜116贴附于引线102的在半蚀刻的区域内的底表面。使用胶带或膜防止热沉112直接接触引线102，该接触将导致短路。但是，在某些情况下，可能期望的是将接地引线连接至热沉，在这种情况下能够在胶带中形成狭缝或孔，以允许这样的接触。
半导体管芯118贴附于多个引线102的顶表面。管芯118被支撑在引线102的近端部106上并且横跨中央开口104。管芯118可以包括任意类型的集成电路，包括数字和/或模拟电路，并且可以是定制或标准设计。也就是，本发明并不受限于集成电路管芯的类型。管芯118优选地以管芯贴附膜(DAF)120贴附于引线102的顶表面。DAF 120可以覆盖管芯118的整个底表面，或者如图1A所示，仅覆盖管芯的底表面的与引线102接触的那些部分。
在当前优选的实施例中，要保持封装成本为低，管芯118的有源表面背离引线102。管芯118的有源表面包括以接合线122与引线102中相应的引线电连接的多个电极(管芯I/O焊盘)。接合线122可以包括铜或金，并且使用市场上可购得的线接合设备来贴附。在一个可替换的实施例中，可以使用倒装芯片连接法，在该方法中，管芯的有源表面面向引线，并且管芯电极直接接触引线。在这种情况下，电极隆起(bumped)以与引线实现电接触。
密封剂124覆盖电连接(即，接合线122)以及至少管芯118和多个引线102的顶表面。但是，引线102的远端部108被暴露以允许与管芯118的外部电通信。在图1B所示的顶视图中，只有密封剂124是可见的，而在图1C所示的底视图中，除了密封剂124外，引线102的远端部108的底表面以及热沉112的底表面是可见的。密封剂124界定了封装体，其中引线102的远端部108在封装体的侧面表面和底表面都是暴露的。
图2是示出组装图1A、1B和1C的半导体器件100方法的流程图130。
在步骤132，提供引线框架和管芯。引线框架可以由引线框架制造商制造并被运输至组装工厂。同样，集成电路或半导体管芯可以来自在晶圆上制造此类管芯的公司。晶圆可以被切割或被划片以提供单个管芯，要么是在运输至组装工厂之前，要么可以在组装工厂进行切割。
所提供的引线框架优选地包括环绕中央开口104的多个引线102，如图3A和3B所示，图3A和3B是引线框架的顶视平面图和底视平面图。尽管在当前优选的实施例中，中央开口104大体上是圆形的，但中央开口也可以是矩形的。之所以圆形的中央开口是优选的，是因为它允许更小的引线间距，所以引线框架能够支撑更多的引线。引线102具有邻近于中央开口104的近端部106、与中央开口104间隔开的远端部108，以及在近端部和远端部106和108之间的中央区域110。如图3B所示，中央区域110和近端部106的底表面被蚀刻，提供以111标识的半蚀刻区。
在步骤134(图2)，图4A和4B所示的热沉112贴附于引线102的底表面。优选地，热沉具有与被蚀刻掉的引线的量相等的厚度，使得当热沉112贴附于引线102的底表面时，热沉112座落于半蚀刻区111内。热沉优选地以高温双面粘合剂胶带116贴附于引线102。这样的高温双面胶带可从各种各样的供应商处购得并且是本领域技术人员已知的。在一个实施例中，胶带116贴附于铜片之上以及然后贴附于单个的热沉之上，并且穿孔通过冲压来形成，由此穿孔就延伸穿过热沉和胶带116两者。
在步骤136，一片胶带126被施加于引线框架和热沉组件之上，如图5所示，并且然后用胶带黏住的组件被翻转。
在步骤138，管芯118贴附于引线102的顶表面，优选地以管芯贴附膜(DAF)贴附，例如，可从日本平冢的古河电工集团(Furukawa Electric Group of Hiratsuka)购得的AFN301 DAF膜。图6A示出了贴附于引线102的顶表面的管芯118A，其中管芯电极119在管芯118A的有源表面上是可见的。图6B示出了贴附于引线102的顶表面的尺寸较大的管芯118B。管芯118A由引线102的近端部106支撑，而管芯118B由引线102的近端部106和中央区域110支撑。因而，清楚的是，引线框架能够适应各种尺寸的管芯，这有利于组装且降低了组装成本。
在步骤140，在管芯118A的有源表面上的电极119以接合线122电连接至引线102中的相应的引线。接合线122所贴附的在引线102上的位置取决于管芯的尺寸。例如，对于图6A、7A和7B所示的管芯118A，接合线122将贴附于引线102的中央区域110，而对于图6B所示的管芯118B，接合线122将被附贴于很靠近引线102的远端部108处。
图7C示出了具有更小的管芯118C的半导体器件的一个实施例。在该实施例中，管芯118C足够小，以被容纳于中央开口104内并且受到热沉112的底表面的支撑。
在步骤142，执行模制操作，以用模制化合物124密封管芯118、接合线122以及引线102的部分，但是使得引线的远端部108暴露以允许与管芯118的外部电通信。密封剂124界定了封装体，并且引线102的远端部108在封装体的侧面表面和底表面暴露，从而形成QFN(四方扁平无引脚)型封装。施加于组件的底表面的胶带126(图5)也被去除，以提供完成的封装器件100。
现在应当清楚，本发明包括具有有着环绕中央开口的多个引线的引线框架的半导体器件。热沉贴附于引线的底面，并且管芯贴附于引线的顶面。优选地，引线的底面是半蚀刻的，使得热沉位于与引线的外部或远端部齐平的位置。各种尺寸的管芯可以贴附于引线的顶表面，并且在一个实施例中，小的管芯被布置于中央开口内并且由热沉支撑。管芯以接合线连接至引线，并且该组件以环氧树脂密封，由此形成QFN型封装。
半导体器件具有如下优点：允许各种尺寸的管芯；增加的引线数，因为没有角部系杆(tie bar)；良好的电学性能，即，良好的导通电阻(RDSon)，因为无需长的接合线以将管芯电极与引线连接；以及良好的热性能，因为热量可以通过引线和热沉消散掉。
本文对“一个实施例”或“实施例”的引用意指结合实施例所描述的特定的特征、结构或特性能够包括于本发明的至少一个实施例中。出现于本说明书的不同地方的短语“在一个实施例中”并不一定全都参考同一实施例，单独的或可替换的实施例也不一定与其他实施例相互排斥。这同样适用于词语“实现”。
出于本描述的目的，词语“耦合”、“耦接”、“耦接的”、“连接”、“正连接”或“连接的”指的是本技术领域所已知的或以后将开发出的任何形式，其中允许能量在两个或更多个元件之间传输，并且一个或多个附加的元件的介入是可预期的，尽管不是必要的。词语“直接耦接”、“间接耦接”等意指已连接的元件要么是接触的，要么经由用于传输能量的导体来连接。

Claims (10)

1.一种半导体器件，包括：
具有环绕中央开口的多个引线的引线框架，其中所述引线具有靠近所述中央开口的近端部以及与所述中央开口间隔开的远端部；
贴附于所述多个引线的底表面的热沉；
贴附于所述多个引线的顶表面的半导体管芯，其中所述管芯被支撑于所述引线的所述近端部上并且横跨所述中央开口；
在所述管芯的有源表面上的电极与所述多个引线之间的电连接；以及
覆盖着所述电连接以及至少所述管芯和所述多个引线的顶表面的密封剂，其中所述引线的所述远端部被暴露以允许与所述管芯的外部电通信。
2.根据权利要求1所述的半导体器件，其中：
所述热沉的顶表面贴附于所述多个引线的底表面并且所述热沉的相对的底表面被暴露；并且
在所述近端部和中央区域的所述引线的底表面被蚀刻，并且所述热沉被布置于所述蚀刻区域内使得所述热沉的暴露表面与所述多个引线的所述远端部的底表面齐平。
3.根据权利要求2所述的半导体器件，其中所述热沉被穿孔。
4.根据权利要求1所述的半导体器件，其中：
所述热沉用防止所述热沉短路所述引线的第一粘合剂胶带贴附于所述引线的底面；并且
所述管芯用防止所述管芯短路所述引线的第二粘合剂胶带贴附于所述引线的顶表面。
5.根据权利要求1所述的半导体器件，其中所述电连接包括从所述管芯电极中相应的管芯电极延伸至所述引线中相应的引线的接合线。
6.根据权利要求1所述的半导体器件，其中所述中央开口大体上是圆形的。
7.根据权利要求1所述的半导体器件，其中密封界定了封装体，并且所述引线的所述远端部在所述封装体的侧面表面和底表面上都是暴露的。
8.根据权利要求1所述的半导体器件，其中所述管芯被调整尺寸以覆盖所述引线的所述近端部以及所述引线的中央区域，并且所述管芯电极以接合线电连接至所述引线的靠近所述引线的所述远端部的区域。
9.根据权利要求1所述的半导体器件，其中所述管芯被调整尺寸以适配于所述中央开口之内并且由所述热沉的底表面支撑，其中所述电连接包括延伸于所述管芯电极与所述引线的所述近端部之间的接合线。
10.根据权利要求1所述的半导体器件，其中：
所述热沉的顶表面贴附于所述多个引线的底表面并且所述热沉的相对的底表面是暴露的；
所述引线的在所述近端部和中央区域的底表面被蚀刻，使得所述热沉的暴露表面与所述多个引线的所述远端部的底表面齐平；
所述热沉被穿孔；
所述热沉用防止所述热沉短路所述引线的粘合剂胶带贴附于所述引线的底面；
所述管芯用防止所述管芯短路所述引线的粘合剂胶带贴附于所述引线的顶表面；
所述电连接包括从所述管芯电极中相应的管芯电极延伸至所述引线中相应的引线的接合线；并且
所述热沉的顶表面贴附于所述多个引线的底表面并且所述热沉的相对的底表面被暴露。
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