JP3978424B2 - 半導体モジュール、半導体装置および負荷駆動装置 - Google Patents
半導体モジュール、半導体装置および負荷駆動装置 Download PDFInfo
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73215—Layer and wire connectors
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Description
図1は、この発明による負荷駆動装置の主要部の構成を示す回路図である。
実施の形態2における負荷駆動装置の主要部の回路構成は、図1に示した構成と同じである。
実施の形態3における負荷駆動装置の主要部の回路構成も、図1に示した構成と同じである。
実施の形態4における負荷駆動装置の主要部の回路構成も、図1に示した構成と同じである。
Claims (5)
- 半導体素子と、
前記半導体素子を両側から挟み込むように設けられる第1および第2の電極基板と、
前記第1および第2の電極基板を前記半導体素子に押付ける押付手段と、
連設される前記第1の電極基板、前記半導体素子、および前記第2の電極基板をさらに両側から挟み込むように設けられる第1および第2の放熱板とを備え、
前記押付手段は、前記半導体素子、前記第1および第2の電極基板、ならびに前記第1および第2の放熱板を封止する樹脂モールド材であり、
前記第1および第2の電極基板における前記第1および第2の放熱板とそれぞれ対向する第1の面の外形寸法は、前記第1および第2の放熱板における前記第1および第2の電極基板とそれぞれ対向する第2の面の外形寸法よりも大きく、
前記樹脂モールド材は、前記第1および第2の面の外形寸法差により前記第1および第2の電極基板における前記半導体素子の実装面と対向する非実装面側に回り込むことによって、前記第1および第2の電極基板を前記半導体素子に押付ける、半導体モジュール。 - 前記第1および第2の放熱板における前記第2の面と対向する第3の面の外形寸法は、前記第2の面の外形寸法よりも大きい、請求項1に記載の半導体モジュール。
- 半導体素子と、
前記半導体素子を両側から挟み込むように設けられる第1および第2の電極基板と、
前記第1および第2の電極基板を前記半導体素子に押付ける押付手段と、
連設される前記第1の電極基板、前記半導体素子、および前記第2の電極基板をさらに両側から挟み込むように設けられる第1および第2の放熱板とを備え、
前記押付手段は、前記半導体素子、前記第1および第2の電極基板、ならびに前記第1および第2の放熱板を封止する樹脂モールド材であり、
前記第1および第2の放熱板における前記第1および第2の電極基板とそれぞれ対向する第1の面の外形寸法は、前記第1および第2の放熱板における前記第1の面と対向する第2の面の外形寸法よりも大きく、
前記樹脂モールド材は、前記第1および第2の面の外形寸法差により生じる領域に回り込むことによって、前記第1および第2の放熱板をそれぞれ前記第1および第2の電極基板に押付けることにより前記第1および第2の電極基板を前記半導体素子に押付ける、半導体モジュール。 - 請求項1から請求項3のいずれか1項に記載の半導体モジュールと、
前記半導体モジュールを両側から挟み込むように設けられる第1および第2の冷却器とを備え、
前記第1および第2の冷却器は、それぞれ前記第1および第2の放熱板と密接する、半導体装置。 - 直流電源と、
前記直流電源から直流電力を受け、電気負荷を駆動するインバータ装置とを備え、
前記インバータ装置を構成する複数のアームの各々は、
半導体素子と、
前記半導体素子を両側から挟み込むように設けられる第1および第2の電極基板と、
連設される前記第1の電極基板、前記半導体素子、および前記第2の電極基板をさらに両側から挟み込むように設けられる第1および第2の放熱板と、
連設される前記第1の放熱板、前記第1の電極基板、前記半導体素子、前記第2の電極基板、および前記第2の放熱板をさらに両側から挟み込むように設けられる第1および第2の冷却器と、
前記半導体素子、前記第1および第2の電極基板、ならびに前記第1および第2の放熱板を封止する樹脂モールド材とを含み、
前記第1および第2の電極基板における前記第1および第2の放熱板とそれぞれ対向する第1の面の外形寸法は、前記第1および第2の放熱板における前記第1および第2の電極基板とそれぞれ対向する第2の面の外形寸法よりも大きく、
前記樹脂モールド材は、前記第1および第2の面の外形寸法差により前記第1および第2の電極基板における前記半導体素子の実装面と対向する非実装面側に回り込むことによって、前記第1および第2の電極基板を前記半導体素子に押付ける、負荷駆動装置。
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JP4604954B2 (ja) * | 2005-10-13 | 2011-01-05 | 株式会社デンソー | 半導体モジュールの絶縁構造 |
JP4858290B2 (ja) * | 2006-06-05 | 2012-01-18 | 株式会社デンソー | 負荷駆動装置 |
JP2008124430A (ja) | 2006-10-18 | 2008-05-29 | Hitachi Ltd | パワー半導体モジュール |
JP4826426B2 (ja) * | 2006-10-20 | 2011-11-30 | 株式会社デンソー | 半導体装置 |
DE102008014916B4 (de) | 2007-03-20 | 2010-07-29 | DENSO CORPORATION, Kariya-shi | Pegelverschiebungsschaltung |
JP5227532B2 (ja) * | 2007-04-02 | 2013-07-03 | 日立オートモティブシステムズ株式会社 | インバータ回路用の半導体モジュール |
JP5109506B2 (ja) * | 2007-07-03 | 2012-12-26 | 株式会社デンソー | 半導体装置 |
JP4958735B2 (ja) | 2007-11-01 | 2012-06-20 | 株式会社日立製作所 | パワー半導体モジュールの製造方法、パワー半導体モジュールの製造装置、パワー半導体モジュール、及び接合方法 |
JP5125530B2 (ja) * | 2008-01-16 | 2013-01-23 | 日産自動車株式会社 | 電力変換装置 |
JP4748173B2 (ja) * | 2008-03-04 | 2011-08-17 | 株式会社デンソー | 半導体モジュール及びその製造方法 |
JP4580997B2 (ja) | 2008-03-11 | 2010-11-17 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
JP5162518B2 (ja) * | 2009-04-10 | 2013-03-13 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
JP2013021254A (ja) * | 2011-07-14 | 2013-01-31 | Mitsubishi Electric Corp | 半導体装置および半導体装置の製造方法 |
JP5845835B2 (ja) * | 2011-11-14 | 2016-01-20 | 株式会社デンソー | 半導体モジュール |
JP5902543B2 (ja) * | 2012-04-20 | 2016-04-13 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP2013232495A (ja) * | 2012-04-27 | 2013-11-14 | Mitsubishi Electric Corp | 半導体装置 |
JP5925052B2 (ja) * | 2012-05-23 | 2016-05-25 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
DE102016119485A1 (de) | 2016-10-12 | 2018-04-12 | Infineon Technologies Ag | Chipträger mit elektrisch leitfähiger Schicht, die sich über eine wärmeleitfähige dielektrische Sheet-Struktur hinaus erstreckt |
JP6511506B2 (ja) * | 2016-11-18 | 2019-05-15 | 日立オートモティブシステムズ株式会社 | 半導体モジュール及びこれを備えた電力変換装置 |
JP7049957B2 (ja) * | 2018-08-01 | 2022-04-07 | 日立Astemo株式会社 | 電子制御装置の製造方法 |
JP7167574B2 (ja) * | 2018-09-14 | 2022-11-09 | 株式会社アイシン | 半導体装置及びその製造方法 |
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JPH01165151A (ja) * | 1987-12-22 | 1989-06-29 | Toshiba Components Co Ltd | 半導体整流装置 |
JP3362530B2 (ja) * | 1993-12-16 | 2003-01-07 | セイコーエプソン株式会社 | 樹脂封止型半導体装置およびその製造方法 |
JP3525832B2 (ja) * | 1999-11-24 | 2004-05-10 | 株式会社デンソー | 半導体装置 |
JP3601432B2 (ja) * | 2000-10-04 | 2004-12-15 | 株式会社デンソー | 半導体装置 |
JP3596388B2 (ja) * | 1999-11-24 | 2004-12-02 | 株式会社デンソー | 半導体装置 |
JP4292686B2 (ja) * | 2000-06-08 | 2009-07-08 | 株式会社デンソー | 冷媒冷却型両面冷却半導体装置 |
JP2003046036A (ja) * | 2001-08-01 | 2003-02-14 | Denso Corp | 半導体装置 |
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