KR930003335A - 반도체 칩모듈 및 그 제조방법 - Google Patents

반도체 칩모듈 및 그 제조방법 Download PDF

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Publication number
KR930003335A
KR930003335A KR1019920012280A KR920012280A KR930003335A KR 930003335 A KR930003335 A KR 930003335A KR 1019920012280 A KR1019920012280 A KR 1019920012280A KR 920012280 A KR920012280 A KR 920012280A KR 930003335 A KR930003335 A KR 930003335A
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South Korea
Prior art keywords
semiconductor chip
cap
heat sink
hole
substrate
Prior art date
Application number
KR1019920012280A
Other languages
English (en)
Inventor
마사노리 니시구찌
Original Assignee
쿠라우찌 노리타카
스미도모덴기 고오교오 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from JP17273091A external-priority patent/JPH0521660A/ja
Priority claimed from JP17273591A external-priority patent/JPH0521661A/ja
Priority claimed from JP17273891A external-priority patent/JPH0521662A/ja
Application filed by 쿠라우찌 노리타카, 스미도모덴기 고오교오 가부시기가이샤 filed Critical 쿠라우찌 노리타카
Publication of KR930003335A publication Critical patent/KR930003335A/ko

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    • H01L2924/1579—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

내용 없음.

Description

반도체 칩모듈 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 반도체칩모듈의 외관을 도시한 사시도,
제2도는 본 발명에 의한 멀티칩모듈을 히트싱크를 따라 절단한 종단면도,
제3도(A) 및 제3도(B)는 각각 본 발명의 제1실시예에 의한 멀티칩모듈에 사용가능한 히트싱크부착구조예를 도시한 종단면도.

Claims (25)

  1. 배선부가 형성된 제1기판과, 상기 배선부에 회로면이 행하도록 실장된 반도체칩과, 상기 반도체칩의 회로면과 반대쪽에 일단부가 접촉된 히트싱크와, 상기 히트싱크의 타단부를 외부로 노출시키는 구멍이 형성되어 있고 상기 반도체칩을 에워싸는 캡을 구비한 반도체칩모듈에 있어서, 상기 캡의 구멍의 내벽과 상기 히트싱크사이의 간극 및 상기 히트싱크의 선단부와 상기 반로체칩사이의 간극에 접착제가 매립되어 있는 것을 특징으로 하는 반도체칩모듈.
  2. 제1항에 있어서, 상기 제1기판이 고정된 장착부 및 상기 캡의 주위부가 고정된 고정부를 지니는 동시에, 상기 반도체칩을 상기 캡과 함께 에워싸는 제2기판을 포함하는 것을 특징을 하는 반도체칩모듈.
  3. 제1항에 있어서, 적어도 상기 구멍의 내벽 및 상기 캡안으로 삽입되는 히트싱크의 표면상에 금속막이 형성되어 있는 것을 특징으로 하는 반도체칩모듈.
  4. 제2항에 기재된 반도체칩모듈을 제조하는 방법에 있어서, 상기 반도체칩이 실장된 동시에 상기 제2기판에 고정된 제1기판, 캡 및 히트싱크를 준비하는 공정과, 상기 제2기판상에 상기 캡을 고착하는 공정과, 상기 히트싱크의 일단부를 상기 캡의 구멍에 삽입하여 상기 히트싱크의 일단부와 상기 반도체칩을 접촉시키는 공정과, 상기 반도체칩에 상기 히트싱크의 일단부를 접촉시킨 상태에서 상기 캡의 구멍의 내벽과 상기 히트싱크와의 간극에 접착제를 주입함으로써, 상기 히트싱크의 일단부와 상기 반도체칩사이의 간극에 접착제를 매립하여 상기 히트싱크를 상기 캡에 고정하는 동시에 상기 캡을 기밀밀봉하는 공정을 구비한 반도체칩모듈의 제조방법.
  5. 제4항에 있어서, 상기 캡의 상기 구멍의 내벽상에 미리 금속막이 형성되고, 상기 히트싱크의 상기 일단부상에 미리 금속막이 형성되어 있어, 상기 금속막사이의 간극에 상기 접착제가 주입되는 것을 특징으로 하는 반도체칩모듈의 제조방법.
  6. 배선부가 형성된 제1기판과, 상기 배선부에 회로면이 향하도록 실장된 반도체칩과, 상기 반도체칩의 회로면과 반대쪽에 일단부가 접촉된 히트싱크와, 상기 히트싱크의 타단부를 외부로 노출시키는 구멍이 형성되어 있고 상기 반도체칩을 에워싸는 캡을 구비한 반도체칩모듈에 있어서, 상기 캡의 구멍의 내벽과 상기 히트싱크사이의 간극에 접착제가 매립되고, 상기 히트싱크의 일단부와 상기 반도체칩사이의 간극에 열전도율이 높은 수지재가 매립되어 있는 것을 특징으로 하는 반도체칩모듈.
  7. 제6항에 있어서, 상기 제1기판이 고정된 장착부 및 상기 캡의 주위부가 고정부를 지니는 동시에, 상기 반도체칩을 상기 캡과 함께 에워싸는 제2기판을 포함하는 것을 특징으로 하는 반도체칩모듈.
  8. 제6항에 있어서, 적어도 상기 구멍의 내벽 및 상기 내벽과 대면하는 히트싱크의 표면상에 금속막이 형성되어 있는 것을 특징으로 하는 반도체칩모듈.
  9. 제6항에 있어서, 상기 수지재가 써멀컴파운드인 것을 특징으로 하는 반도체칩모듈.
  10. 제7항에 기재된 반도체칩모듈을 제조하는 방법에 있어서, 상기 반도체칩이 실장된 동시에 상기 제2기판상에 고정된 제1기판, 캡 및 히트싱크를 준비하는 공정과, 상기 제2기판상에 상기 캡을 고착하는 공정과, 상기 캡의 구멍으로부터 열전도율이 높은 수지재를 유입하여 상기 반도체칩상에 상기 수지재를 도포하는 공정과, 상기 히트싱크의 일단부를 상기 캡의 구멍에 삽입하여 상기 히트싱크의 일단부와 상기 수지재를 접촉시키는 공정과, 상기 수지재에 상기 히트싱크의 일단부를 접촉시킨 상태에서 상기 캡의 구멍의 내벽과 상기 히트싱크사이의 간극에 접착제를 매립함으로써 상기 히트싱크를 상기 캡에 고정하는 동시에 상기 캡을 기밀밀봉하는 공정을 구비한 반도체모듈의 제조방법.
  11. 제10항에 있어서, 상기 캡의 구멍의 내벽상에 미리 금속막이 형성되고, 상기 히트싱크의 상기 일단부상에 미리 금속막이 형성되어 있어, 상기 금속막사이의 간극에 상기 접착제가 주입되는 것을 특징으로 하는 반도체칩모듈의 제조방법.
  12. 배선부가 형성된 제1기판과, 상기 배선부에 회로면이 향하도록 실장된 반도체칩과, 상기 반도체칩의 회로면과 반대쪽에 일단부가 접촉된 히트싱크와, 상기 히트싱크의 타단부를 외부로 노출시키는 구멍이 형성되어 있고 상기 반도체칩을 에워싸는 캡을 구비한 반도체칩모듈에 있어서, 상기 반도체칩상에는 상기 히트싱크가 접촉하는 영역을 둘러싸는 홈이 형성되어 있고, 상기 캡의 구멍의 내벽과 상기 히트싱크 사이의 간극에 접착제가 매립되어 있는 것을 특징으로 하는 반도체칩모듈.
  13. 제12항에 있어서, 상기 제1기판이 고정된 장착부 및 상기 캡의 주위부가 고정된 고정부를 지니는 동시에, 상기 반도체칩을 상기 캡과 함께 에워싸는 제2기판을 포함하는 것을 특징으로 하는 반도체칩모듈.
  14. 제12항에 있어서, 적어도 상기 구멍의 내벽 및 상기 캡의 내부로 삽입되는 히트싱크의 표면상에 금속막이 형성되어 있는 것을 특징으로 하는 반도체칩모듈.
  15. 제12항에 있어서, 상기 홈은 상기 반도체칩의 가장자리부에까지 도달하고, 그 반도체칩의 측면상에는 개구부가 형성되어 있는 것을 특징으로 하는 반도체칩모듈.
  16. 제13항에 기재된 반도체칩모듈을 제조하는 방법에 있어서, 상기 홈을 지니는 상기 반도체칩이 실장된 제1기판, 캡 및 히트싱크를 준비하는 공정과, 상기 제2기판상에 상기 캡을 고착하는 공정과, 상기 히트싱크의 일단부와 상기 반도체칩을 접촉시키는 공정과, 상기 홈에 의해 둘러싸인 상기 영역에 상기 히트싱크의 일단부를 접촉시킨 상태에서 상기 캡의 구멍의 내벽과 상기 히트싱크사이의 간극에 접착제를 매립함으로써 상기 히트싱크를 상기 캡에 고정하는 동시에 상기 캡을 기밀밀봉하는 공정을 구비한 반도체칩모듈의 제조방법.
  17. 제16항에 있어서, 상기 캡의 상기 구멍의 내벽상에 미리 금속막이 형성되고, 상기 히트싱크의 상기 일단부 상에 미리 금속막이 형성되어 있어, 상기 금속막사이의 간극에 상기 접착제가 주입되는 것을 특징으로 하는 반도체칩모듈의 제조방법.
  18. 배선부가 형성된 제1기판과, 상기 배선부에 회로면이 향하도록 실장된 반도체칩과, 상기 반도체칩의 회로면과 반대쪽에 일단부가 접촉된 히트싱크와, 상기 히트싱크의 타단부를 외부로 노출시키는 구멍이 형성되어 있고 상기 반도체칩을 에워싸는 캡을 구비한 반도체칩모듈에 있어서, 상기 제1기판은 상기 반도체칩의 주변부근방에 위치하는 소정영역에 절연막이 형성되고, 상기 캡의 구멍의 내벽과 상기 히트싱크 사이의 간극 및 상기 히트싱크의 선단부와 상기 반도체칩사이의 간극에 접착제가 매립되어있는 것을 특징으로 하는 반도체칩모듈.
  19. 제18항에 있어서, 상기 제1기판이 고정된 장착부 및 상기 캡의 주위부가 고정된 고정부를 지니는 동시에, 상기 반도체칩을 상기 캡과 함께 에워싸는 제2기판을 포함하는 것을 특징으로 하는 반도체칩모듈.
  20. 제18항에 있어서, 적어도 상기 구멍의 내벽 및 상기 캡의 내부로 삽입되는 히트싱크의 표면상에 금속막이 형성되어 있는 것을 특징으로 하는 반도체칩모듈.
  21. 제18항에 있어서, 상기 반도체칩의 주변부근방에 있는 상기 절연막상에는, 상기 반도체칩으로부터 아래로 흘러내리는 접착제를 받기위한 오목부가 형성되어 있는 것을 특징으로 하는 반도체칩모듈.
  22. 제18항에 있어서, 상기 반도체칩상에는 상기 히트싱크가 접촉하는 영역을 둘러싸는 홈이 형성되어 있는 것을 특징으로 하는 반도체칩모듈.
  23. 제19항에 기재된 반도체칩모듈을 제조하는 방법에 있어서, 상기 반도체칩이 실장된 동시에 상기 제2기판상에 고정되고, 상기 반도체칩의 주변부근방에 절연막이 형성된 제1기판, 캡 및 히트싱크를 준비하는 공정과, 상기 제2기판상에 상기 캡을 고착하는 공정과, 상기 히트싱크의 일단부와 상기 반도체칩을 접촉시키는 공정과, 상기 반도체칩에 상기 히트싱크의 일단부를 접촉시킨 상태에서 상기 캡의 구멍의 내벽과 상기 히트싱크사이의 간극에 접착제를 매립함으로써, 상기 히트싱크를 상기 캡에 고정하는 동시에 상기 캡을 기밀밀봉하는 공정을 구비한 반도체칩모듈의 제조방법.
  24. 제23항에 있어서, 상기 캡의 구멍의 내벽 및 상기 히트싱크의 일단부에 미리 금속막이 형성되어 있어, 상기 금속막사이의 간극으로 상기 접착제가 주입되는 것을 특징으로 하는 반도체칩모듈의 제조방법.
  25. 제22항에 기재된 반도체칩모듈을 제조하는 방법에 있어서, 상기 반도체칩이 실장된 동시에 상기 반도체칩의 주변부근방에 절연막이 형성된 제1기판, 캡 및 히트싱크를 준비하는 공정과, 상기 기판상에 상기 캡을 고착하는 공정과, 상기 히트싱크의 일단부를 상기 반도체칩상의 홈에 의해 둘러싸인 영역에 접촉시키는 공정과, 상기 반도체칩에 상기 히트싱크의 일단부를 접촉시킨 상태에서 상기 캡의 구멍의 내벽과 상기 히트싱크 사이의 간극에 접착제를 매립함으로써, 상기 히트싱크를 상기 캡에 고정하는 동시에 상기 캡을 기밀밀봉하는 공정을 구비한 반도체칩의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920012280A 1991-07-12 1992-07-10 반도체 칩모듈 및 그 제조방법 KR930003335A (ko)

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Application Number Priority Date Filing Date Title
JP17273091A JPH0521660A (ja) 1991-07-12 1991-07-12 半導体チツプモジユール及びその製造方法
JP91-172738 1991-07-12
JP91-172730 1991-07-12
JP17273591A JPH0521661A (ja) 1991-07-12 1991-07-12 半導体チツプモジユール
JP17273891A JPH0521662A (ja) 1991-07-12 1991-07-12 半導体チツプモジユール及びその製造方法
JP91-172735 1991-07-12

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AU1869892A (en) 1993-01-14
AU651461B2 (en) 1994-07-21
EP0522563A3 (en) 1994-06-08
EP0522563A2 (en) 1993-01-13
US5525548A (en) 1996-06-11
CA2072377A1 (en) 1993-01-13
US5387815A (en) 1995-02-07

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