KR860001476A - P-형 반도체 합금을 연속적으로 제조하는 방법 - Google Patents
P-형 반도체 합금을 연속적으로 제조하는 방법 Download PDFInfo
- Publication number
- KR860001476A KR860001476A KR1019840004525A KR840004525A KR860001476A KR 860001476 A KR860001476 A KR 860001476A KR 1019840004525 A KR1019840004525 A KR 1019840004525A KR 840004525 A KR840004525 A KR 840004525A KR 860001476 A KR860001476 A KR 860001476A
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- South Korea
- Prior art keywords
- electrode forming
- flexible
- type semiconductor
- region
- semiconductor alloy
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 4
- 229910045601 alloy Inorganic materials 0.000 title claims 2
- 239000000956 alloy Substances 0.000 title claims 2
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 239000004065 semiconductor Substances 0.000 title description 4
- 229910000676 Si alloy Inorganic materials 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 230000005693 optoelectronics Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Plasma & Fusion (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 p-도우핑된 재료를 포함하는 반도체 소자들을 만들기위한 단일의 공정단계를 도식적으로 도해한 도면,
제2도는 본 발명의 반도체 박막을 연속적으로 용착하기 위한 장치의 도식적 도해도,
제3도는 본 발명의 개선된 p-도우핑된 반도체 소자를 연속적으로 형성하는 제1도의 공정단계를 수행하기 위한 장치를 도해한 블럭다이아그람.
Claims (1)
- 광전지 판넬을 제조하는 방법에 있어서, 하나이상의 전극형성 영역을 그위에 갖는 가요성의 섭스트레이트의 웨브로올을 형성하고, 반대도전성(p와 n)타잎의 적어도 두 개의 얇고 가요성인 실리콘 합금이 상기 하나이상의 전극형성영역중 적어도 일부분에 걸쳐서 용착되는 바의 적어도 하나의 실리콘 용착영역을 그안에 포함하고 있는 부분적으로 진공인 공간속으로 상기 섭스트레이트 로올을 거의 연속적으로 펼치고, 상기 합금의 하나이상은 광전공핍영역을 형성하고 그리고 후속적으로 상기 실리콘 합금위에 얇고 가요성인 전극 형성층을 상기 전극형성 지역의 각각에 대하여 별도로 적용하는것을 특징으로 하는 광전지 판넬을 제조하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US151301 | 1980-05-19 | ||
US06/151,301 US4400409A (en) | 1980-05-19 | 1980-05-19 | Method of making p-doped silicon films |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019810001678A Division KR840000756B1 (ko) | 1980-05-19 | 1981-05-15 | P-형 반도체 합금 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR860001476A true KR860001476A (ko) | 1986-02-26 |
KR890003499B1 KR890003499B1 (ko) | 1989-09-22 |
Family
ID=22538142
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019810001678A KR840000756B1 (ko) | 1980-05-19 | 1981-05-15 | P-형 반도체 합금 제조방법 |
KR1019840004524A KR890003498B1 (ko) | 1980-05-19 | 1984-07-30 | P-형 반도체 합금을 연속적으로 제조하는 장치 |
KR1019840004525A KR890003499B1 (ko) | 1980-05-19 | 1984-07-30 | P-형 반도체 합금을 연속적으로 제조하는 방법 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019810001678A KR840000756B1 (ko) | 1980-05-19 | 1981-05-15 | P-형 반도체 합금 제조방법 |
KR1019840004524A KR890003498B1 (ko) | 1980-05-19 | 1984-07-30 | P-형 반도체 합금을 연속적으로 제조하는 장치 |
Country Status (19)
Country | Link |
---|---|
US (1) | US4400409A (ko) |
JP (5) | JP2539916B2 (ko) |
KR (3) | KR840000756B1 (ko) |
AU (3) | AU542845B2 (ko) |
BR (1) | BR8103030A (ko) |
CA (1) | CA1184096A (ko) |
DE (3) | DE3153270C2 (ko) |
ES (3) | ES502281A0 (ko) |
FR (1) | FR2482786B1 (ko) |
GB (3) | GB2076433B (ko) |
IE (1) | IE52688B1 (ko) |
IL (1) | IL62883A (ko) |
IN (1) | IN155670B (ko) |
IT (1) | IT1135827B (ko) |
MX (1) | MX155307A (ko) |
NL (1) | NL8102411A (ko) |
PH (1) | PH18408A (ko) |
SE (1) | SE456380B (ko) |
ZA (1) | ZA813076B (ko) |
Families Citing this family (137)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5091334A (en) * | 1980-03-03 | 1992-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JPS5713777A (en) | 1980-06-30 | 1982-01-23 | Shunpei Yamazaki | Semiconductor device and manufacture thereof |
US4677738A (en) * | 1980-05-19 | 1987-07-07 | Energy Conversion Devices, Inc. | Method of making a photovoltaic panel |
US5262350A (en) * | 1980-06-30 | 1993-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Forming a non single crystal semiconductor layer by using an electric current |
US6900463B1 (en) | 1980-06-30 | 2005-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US5859443A (en) * | 1980-06-30 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US4542711A (en) * | 1981-03-16 | 1985-09-24 | Sovonics Solar Systems | Continuous system for depositing amorphous semiconductor material |
DE3280293D1 (de) * | 1981-11-04 | 1991-02-21 | Kanegafuchi Chemical Ind | Biegsame photovoltaische einrichtung. |
US4485125A (en) * | 1982-03-19 | 1984-11-27 | Energy Conversion Devices, Inc. | Method for continuously producing tandem amorphous photovoltaic cells |
JPS58169980A (ja) * | 1982-03-19 | 1983-10-06 | Matsushita Electric Ind Co Ltd | 光起電力素子の製造方法 |
US4423701A (en) * | 1982-03-29 | 1984-01-03 | Energy Conversion Devices, Inc. | Glow discharge deposition apparatus including a non-horizontally disposed cathode |
US4462332A (en) * | 1982-04-29 | 1984-07-31 | Energy Conversion Devices, Inc. | Magnetic gas gate |
JPS58196063A (ja) * | 1982-05-10 | 1983-11-15 | Matsushita Electric Ind Co Ltd | 光起電力素子の製造方法 |
JPS5934668A (ja) * | 1982-08-21 | 1984-02-25 | Agency Of Ind Science & Technol | 薄膜太陽電池の製造方法 |
JPS5950575A (ja) * | 1982-09-16 | 1984-03-23 | Agency Of Ind Science & Technol | 太陽電池の製造方法 |
JPS5961077A (ja) * | 1982-09-29 | 1984-04-07 | Nippon Denso Co Ltd | アモルフアスシリコン太陽電池 |
US4443652A (en) * | 1982-11-09 | 1984-04-17 | Energy Conversion Devices, Inc. | Electrically interconnected large area photovoltaic cells and method of producing said cells |
US4515107A (en) * | 1982-11-12 | 1985-05-07 | Sovonics Solar Systems | Apparatus for the manufacture of photovoltaic devices |
JPS59201471A (ja) * | 1983-04-29 | 1984-11-15 | Semiconductor Energy Lab Co Ltd | 光電変換半導体装置 |
US4513684A (en) * | 1982-12-22 | 1985-04-30 | Energy Conversion Devices, Inc. | Upstream cathode assembly |
US4483883A (en) * | 1982-12-22 | 1984-11-20 | Energy Conversion Devices, Inc. | Upstream cathode assembly |
JPS60119784A (ja) * | 1983-12-01 | 1985-06-27 | Kanegafuchi Chem Ind Co Ltd | 絶縁金属基板の製法およびそれに用いる装置 |
AU562641B2 (en) | 1983-01-18 | 1987-06-18 | Energy Conversion Devices Inc. | Electronic matrix array |
US4479455A (en) * | 1983-03-14 | 1984-10-30 | Energy Conversion Devices, Inc. | Process gas introduction and channeling system to produce a profiled semiconductor layer |
JPH0614556B2 (ja) * | 1983-04-29 | 1994-02-23 | 株式会社半導体エネルギー研究所 | 光電変換装置及びその作製方法 |
JPS59228716A (ja) * | 1983-06-10 | 1984-12-22 | Sanyo Electric Co Ltd | 気相成長法 |
US4480585A (en) * | 1983-06-23 | 1984-11-06 | Energy Conversion Devices, Inc. | External isolation module |
DE3400843A1 (de) * | 1983-10-29 | 1985-07-18 | VEGLA Vereinigte Glaswerke GmbH, 5100 Aachen | Verfahren zum herstellen von autoglasscheiben mit streifenfoermigen blendschutzfiltern durch bedampfen oder sputtern, und vorrichtung zur durchfuehrung des verfahrens |
US4514583A (en) * | 1983-11-07 | 1985-04-30 | Energy Conversion Devices, Inc. | Substrate for photovoltaic devices |
JPS60214572A (ja) * | 1984-04-11 | 1985-10-26 | Matsushita Electric Ind Co Ltd | 薄膜太陽電池およびその製造方法 |
US4634605A (en) * | 1984-05-23 | 1987-01-06 | Wiesmann Harold J | Method for the indirect deposition of amorphous silicon and polycrystalline silicone and alloys thereof |
JPS61133676A (ja) * | 1984-12-03 | 1986-06-20 | Showa Alum Corp | a−Si太陽電池用基板 |
JPS6142972A (ja) * | 1984-08-06 | 1986-03-01 | Showa Alum Corp | a−Si太陽電池用基板の製造方法 |
JPS6179548U (ko) * | 1984-10-31 | 1986-05-27 | ||
US4609771A (en) * | 1984-11-02 | 1986-09-02 | Sovonics Solar Systems | Tandem junction solar cell devices incorporating improved microcrystalline p-doped semiconductor alloy material |
JPS61133675A (ja) * | 1984-12-03 | 1986-06-20 | Showa Alum Corp | a−Si太陽電池用基板の製造方法 |
US4566403A (en) * | 1985-01-30 | 1986-01-28 | Sovonics Solar Systems | Apparatus for microwave glow discharge deposition |
FR2581781B1 (fr) * | 1985-05-07 | 1987-06-12 | Thomson Csf | Elements de commande non lineaire pour ecran plat de visualisation electrooptique et son procede de fabrication |
US4664951A (en) * | 1985-07-31 | 1987-05-12 | Energy Conversion Devices, Inc. | Method provided for corrective lateral displacement of a longitudinally moving web held in a planar configuration |
JPS6292485A (ja) * | 1985-10-18 | 1987-04-27 | Sanyo Electric Co Ltd | 太陽電池の製造方法 |
FR2593343B1 (fr) * | 1986-01-20 | 1988-03-25 | Thomson Csf | Matrice d'elements photosensibles et son procede de fabrication, procede de lecture associe, et application de cette matrice a la prise de vue d'images |
JPH0744286B2 (ja) * | 1986-03-04 | 1995-05-15 | 三菱電機株式会社 | 非晶質光発電素子モジュールの製造方法 |
US4841908A (en) * | 1986-06-23 | 1989-06-27 | Minnesota Mining And Manufacturing Company | Multi-chamber deposition system |
IL82673A0 (en) * | 1986-06-23 | 1987-11-30 | Minnesota Mining & Mfg | Multi-chamber depositions system |
US4874631A (en) * | 1986-06-23 | 1989-10-17 | Minnesota Mining And Manufacturing Company | Multi-chamber deposition system |
US5031571A (en) * | 1988-02-01 | 1991-07-16 | Mitsui Toatsu Chemicals, Inc. | Apparatus for forming a thin film on a substrate |
DE3809010C2 (de) * | 1988-03-17 | 1998-02-19 | Siemens Ag | Verfahren zum Herstellen mikrokristalliner, n- oder p-leitender Siliziumschichten nach der Glimmentladungsplasmatechnik, geeignet für Solarzellen |
JPH0351971Y2 (ko) * | 1988-05-12 | 1991-11-08 | ||
US5001939A (en) * | 1988-08-04 | 1991-03-26 | Minnesota Mining And Manufacturing Co. | Surface characterization apparatus and method |
US5053625A (en) * | 1988-08-04 | 1991-10-01 | Minnesota Mining And Manufacturing Company | Surface characterization apparatus and method |
JPH02235327A (ja) * | 1989-03-08 | 1990-09-18 | Fujitsu Ltd | 半導体成長装置および半導体成長方法 |
US5098850A (en) * | 1989-06-16 | 1992-03-24 | Canon Kabushiki Kaisha | Process for producing substrate for selective crystal growth, selective crystal growth process and process for producing solar battery by use of them |
DE69030140T2 (de) * | 1989-06-28 | 1997-09-04 | Canon Kk | Verfahren und Anordnung zur kontinuierlichen Bildung einer durch Mikrowellen-Plasma-CVD niedergeschlagenen grossflächigen Dünnschicht |
US5130170A (en) * | 1989-06-28 | 1992-07-14 | Canon Kabushiki Kaisha | Microwave pcvd method for continuously forming a large area functional deposited film using a curved moving substrate web with microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation |
US5281541A (en) * | 1990-09-07 | 1994-01-25 | Canon Kabushiki Kaisha | Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method |
JP2824808B2 (ja) * | 1990-11-16 | 1998-11-18 | キヤノン株式会社 | マイクロ波プラズマcvd法による大面積の機能性堆積膜を連続的に形成する装置 |
US5225378A (en) * | 1990-11-16 | 1993-07-06 | Tokyo Electron Limited | Method of forming a phosphorus doped silicon film |
US5629054A (en) * | 1990-11-20 | 1997-05-13 | Canon Kabushiki Kaisha | Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method |
JP2810532B2 (ja) * | 1990-11-29 | 1998-10-15 | キヤノン株式会社 | 堆積膜形成方法及び堆積膜形成装置 |
JP3101330B2 (ja) * | 1991-01-23 | 2000-10-23 | キヤノン株式会社 | マイクロ波プラズマcvd法による大面積の機能性堆積膜を連続的に形成する方法及び装置 |
JP2975151B2 (ja) * | 1991-03-28 | 1999-11-10 | キヤノン株式会社 | 半導体素子の連続的製造装置 |
JP3118037B2 (ja) * | 1991-10-28 | 2000-12-18 | キヤノン株式会社 | 堆積膜形成方法および堆積膜形成装置 |
JP3073327B2 (ja) * | 1992-06-30 | 2000-08-07 | キヤノン株式会社 | 堆積膜形成方法 |
DE4324320B4 (de) * | 1992-07-24 | 2006-08-31 | Fuji Electric Co., Ltd., Kawasaki | Verfahren und Vorrichtung zur Herstellung einer als dünne Schicht ausgebildeten fotovoltaischen Umwandlungsvorrichtung |
US5821597A (en) * | 1992-09-11 | 1998-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
US6720576B1 (en) | 1992-09-11 | 2004-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing method and photoelectric conversion device |
EP0609104B1 (en) * | 1993-01-29 | 1998-05-20 | Canon Kabushiki Kaisha | Process for the formation of functional deposited films |
JPH0653534A (ja) * | 1993-02-04 | 1994-02-25 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
JP3571785B2 (ja) * | 1993-12-28 | 2004-09-29 | キヤノン株式会社 | 堆積膜形成方法及び堆積膜形成装置 |
DE9407482U1 (de) * | 1994-05-05 | 1994-10-06 | Leybold Ag | Funktionseinrichtung für eine Vakuumanlage für die Behandlung von scheibenförmigen Werkstücken |
JP3169337B2 (ja) * | 1995-05-30 | 2001-05-21 | キヤノン株式会社 | 光起電力素子及びその製造方法 |
US6273955B1 (en) | 1995-08-28 | 2001-08-14 | Canon Kabushiki Kaisha | Film forming apparatus |
US6096389A (en) * | 1995-09-14 | 2000-08-01 | Canon Kabushiki Kaisha | Method and apparatus for forming a deposited film using a microwave CVD process |
JP3025179B2 (ja) * | 1995-09-28 | 2000-03-27 | キヤノン株式会社 | 光電変換素子の形成方法 |
JPH09199431A (ja) | 1996-01-17 | 1997-07-31 | Canon Inc | 薄膜形成方法および薄膜形成装置 |
US6153013A (en) * | 1996-02-16 | 2000-11-28 | Canon Kabushiki Kaisha | Deposited-film-forming apparatus |
US5849108A (en) * | 1996-04-26 | 1998-12-15 | Canon Kabushiki Kaisha | Photovoltaic element with zno layer having increasing fluorine content in layer thickness direction |
JP3437386B2 (ja) * | 1996-09-05 | 2003-08-18 | キヤノン株式会社 | 光起電力素子、並びにその製造方法 |
US6159763A (en) * | 1996-09-12 | 2000-12-12 | Canon Kabushiki Kaisha | Method and device for forming semiconductor thin film, and method and device for forming photovoltaic element |
US6057005A (en) * | 1996-12-12 | 2000-05-02 | Canon Kabushiki Kaisha | Method of forming semiconductor thin film |
US6159300A (en) | 1996-12-17 | 2000-12-12 | Canon Kabushiki Kaisha | Apparatus for forming non-single-crystal semiconductor thin film, method for forming non-single-crystal semiconductor thin film, and method for producing photovoltaic device |
US6726812B1 (en) | 1997-03-04 | 2004-04-27 | Canon Kabushiki Kaisha | Ion beam sputtering apparatus, method for forming a transparent and electrically conductive film, and process for the production of a semiconductor device |
JPH1180964A (ja) | 1997-07-07 | 1999-03-26 | Canon Inc | プラズマcvd法による堆積膜形成装置 |
US6268233B1 (en) | 1998-01-26 | 2001-07-31 | Canon Kabushiki Kaisha | Photovoltaic device |
JPH11251612A (ja) | 1998-03-03 | 1999-09-17 | Canon Inc | 光起電力素子の製造方法 |
JPH11246971A (ja) | 1998-03-03 | 1999-09-14 | Canon Inc | 微結晶シリコン系薄膜の作製方法及び作製装置 |
EP0977246A3 (en) * | 1998-07-31 | 2005-11-09 | Canon Kabushiki Kaisha | Production process of semiconductor layer, fabrication process of photovoltaic cell and production apparatus of semiconductor layer |
EP1001449A1 (en) | 1998-10-16 | 2000-05-17 | Canon Kabushiki Kaisha | Deposited film forming system and process |
JP2000204478A (ja) | 1998-11-11 | 2000-07-25 | Canon Inc | 基板処理装置及び基板処理方法 |
JP2001040478A (ja) | 1999-05-27 | 2001-02-13 | Canon Inc | 堆積膜形成装置及び堆積膜形成方法 |
JP3870014B2 (ja) | 1999-07-26 | 2007-01-17 | キヤノン株式会社 | 真空処理装置および真空処理方法 |
US6547922B2 (en) * | 2000-01-31 | 2003-04-15 | Canon Kabushiki Kaisha | Vacuum-processing apparatus using a movable cooling plate during processing |
JP2001323376A (ja) * | 2000-03-06 | 2001-11-22 | Canon Inc | 堆積膜の形成装置 |
US6667240B2 (en) | 2000-03-09 | 2003-12-23 | Canon Kabushiki Kaisha | Method and apparatus for forming deposited film |
JP4439665B2 (ja) * | 2000-03-29 | 2010-03-24 | 株式会社半導体エネルギー研究所 | プラズマcvd装置 |
JP2002020863A (ja) | 2000-05-01 | 2002-01-23 | Canon Inc | 堆積膜の形成方法及び形成装置、及び基板処理方法 |
US6541316B2 (en) * | 2000-12-22 | 2003-04-01 | The Regents Of The University Of California | Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction |
JP2002305315A (ja) | 2001-01-31 | 2002-10-18 | Canon Inc | 半導体素子の形成方法及び半導体素子 |
KR100434794B1 (ko) * | 2001-02-22 | 2004-06-07 | 최동열 | 잉크젯 날염용 원단지 및 그 제조방법 |
JP4651072B2 (ja) | 2001-05-31 | 2011-03-16 | キヤノン株式会社 | 堆積膜形成方法、および堆積膜形成装置 |
GB0202125D0 (en) * | 2002-01-30 | 2002-03-20 | Qinetiq Ltd | Dark coatings |
DE60211470T2 (de) * | 2002-03-15 | 2006-11-09 | Vhf Technologies S.A. | Vorrichtung und Verfahren zur Herstellung von flexiblen Halbleiter-Einrichtungen |
GB0212062D0 (en) * | 2002-05-24 | 2002-07-03 | Vantico Ag | Jetable compositions |
JP2004043910A (ja) * | 2002-07-12 | 2004-02-12 | Canon Inc | 堆積膜形成方法および形成装置 |
JP2004300574A (ja) * | 2003-03-20 | 2004-10-28 | Canon Inc | 基板処理装置 |
KR101115291B1 (ko) | 2003-04-25 | 2012-03-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액적 토출 장치, 패턴의 형성 방법, 및 반도체 장치의 제조 방법 |
JP2004335706A (ja) * | 2003-05-07 | 2004-11-25 | Canon Inc | 半導体素子の形成方法 |
US7768018B2 (en) * | 2003-10-10 | 2010-08-03 | Wostec, Inc. | Polarizer based on a nanowire grid |
RU2240280C1 (ru) | 2003-10-10 | 2004-11-20 | Ворлд Бизнес Ассошиэйтс Лимитед | Способ формирования упорядоченных волнообразных наноструктур (варианты) |
US7462514B2 (en) * | 2004-03-03 | 2008-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same, liquid crystal television, and EL television |
US20050196710A1 (en) * | 2004-03-04 | 2005-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming pattern, thin film transistor, display device and method for manufacturing the same, and television apparatus |
JP4416569B2 (ja) * | 2004-05-24 | 2010-02-17 | キヤノン株式会社 | 堆積膜形成方法および堆積膜形成装置 |
WO2006009881A2 (en) * | 2004-06-18 | 2006-01-26 | Innovalight, Inc. | Process and apparatus for forming nanoparticles using radiofrequency plasmas |
US8158517B2 (en) * | 2004-06-28 | 2012-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing wiring substrate, thin film transistor, display device and television device |
US20090014423A1 (en) * | 2007-07-10 | 2009-01-15 | Xuegeng Li | Concentric flow-through plasma reactor and methods therefor |
WO2008091581A1 (en) | 2007-01-22 | 2008-07-31 | The University Of Minnesota | Nanoparticles with grafted organic molecules |
WO2008143716A2 (en) * | 2007-01-22 | 2008-11-27 | Innovalight, Inc. | In situ modification of group iv nanoparticles using gas phase nanoparticle reactors |
US8066840B2 (en) * | 2007-01-22 | 2011-11-29 | Solopower, Inc. | Finger pattern formation for thin film solar cells |
US8968438B2 (en) * | 2007-07-10 | 2015-03-03 | Innovalight, Inc. | Methods and apparatus for the in situ collection of nucleated particles |
US8471170B2 (en) | 2007-07-10 | 2013-06-25 | Innovalight, Inc. | Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor |
GB2453766A (en) * | 2007-10-18 | 2009-04-22 | Novalia Ltd | Method of fabricating an electronic device |
DE102008043458A1 (de) * | 2008-11-04 | 2010-05-12 | Q-Cells Se | Solarzelle |
KR20110015998A (ko) * | 2009-08-10 | 2011-02-17 | 삼성전자주식회사 | 태양 전지 및 그 제조 방법 |
US20110083724A1 (en) * | 2009-10-08 | 2011-04-14 | Ovshinsky Stanford R | Monolithic Integration of Photovoltaic Cells |
TWI501412B (zh) * | 2010-06-22 | 2015-09-21 | Iner Aec Executive Yuan | 具有改良的光捕捉結構之太陽電池 |
ES2509967T3 (es) * | 2011-02-24 | 2014-10-20 | Soitec Solar Gmbh | Disposiciones de células solares para módulos fotovoltaicos concentradores |
WO2013006077A1 (en) | 2011-07-06 | 2013-01-10 | Wostec, Inc. | Solar cell with nanostructured layer and methods of making and using |
CN103999244B (zh) | 2011-08-05 | 2017-02-15 | 沃斯特克公司 | 具有纳米结构化层的发光二极管及制造和使用方法 |
WO2013089578A1 (en) | 2011-12-12 | 2013-06-20 | Wostec, Inc. | Sers-sensor with nanostructured surface and methods of making and using |
EP2795786B1 (en) * | 2011-12-19 | 2018-07-11 | Printed Energy Pty Ltd. | Solar cell structure with graded refractive index lens |
WO2013109157A1 (en) | 2012-01-18 | 2013-07-25 | Wostec, Inc. | Arrangements with pyramidal features having at least one nanostructured surface and methods of making and using |
WO2013141740A1 (en) | 2012-03-23 | 2013-09-26 | Wostec, Inc. | Sers-sensor with nanostructured layer and methods of making and using |
WO2014142700A1 (en) | 2013-03-13 | 2014-09-18 | Wostec Inc. | Polarizer based on a nanowire grid |
US9748423B2 (en) * | 2014-01-16 | 2017-08-29 | Fundacio Institut De Ciencies Fotoniques | Photovoltaic device with fiber array for sun tracking |
US20170194167A1 (en) | 2014-06-26 | 2017-07-06 | Wostec, Inc. | Wavelike hard nanomask on a topographic feature and methods of making and using |
WO2018093284A1 (en) | 2016-11-18 | 2018-05-24 | Wostec, Inc. | Optical memory devices using a silicon wire grid polarizer and methods of making and using |
WO2018156042A1 (en) | 2017-02-27 | 2018-08-30 | Wostec, Inc. | Nanowire grid polarizer on a curved surface and methods of making and using |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US406452A (en) * | 1889-07-09 | Method of making cannon | ||
FR2133498B1 (ko) * | 1971-04-15 | 1977-06-03 | Labo Electronique Physique | |
GB1342972A (en) * | 1971-08-28 | 1974-01-10 | Wildt Mellor Bromley Ltd | Knitting machine needle |
JPS5631297B2 (ko) * | 1973-05-29 | 1981-07-20 | ||
US3979271A (en) * | 1973-07-23 | 1976-09-07 | Westinghouse Electric Corporation | Deposition of solid semiconductor compositions and novel semiconductor materials |
FR2265872B1 (ko) * | 1974-03-27 | 1977-10-14 | Anvar | |
US3969163A (en) * | 1974-09-19 | 1976-07-13 | Texas Instruments Incorporated | Vapor deposition method of forming low cost semiconductor solar cells including reconstitution of the reacted gases |
JPS51113481A (en) * | 1975-03-28 | 1976-10-06 | Sony Corp | Semiconductor device |
JPS51141587A (en) * | 1975-05-30 | 1976-12-06 | Sharp Kk | Method of producing solar battery |
IT1062510B (it) * | 1975-07-28 | 1984-10-20 | Rca Corp | Dispositivo semiconduttore presentante una regione attiva di silicio amorfo |
US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
US4152535A (en) * | 1976-07-06 | 1979-05-01 | The Boeing Company | Continuous process for fabricating solar cells and the product produced thereby |
US4042418A (en) | 1976-08-02 | 1977-08-16 | Westinghouse Electric Corporation | Photovoltaic device and method of making same |
DE2638269C2 (de) * | 1976-08-25 | 1983-05-26 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung von substratgebundenem, großflächigem Silicium |
US4196438A (en) * | 1976-09-29 | 1980-04-01 | Rca Corporation | Article and device having an amorphous silicon containing a halogen and method of fabrication |
US4133697A (en) | 1977-06-24 | 1979-01-09 | Nasa | Solar array strip and a method for forming the same |
US4117506A (en) | 1977-07-28 | 1978-09-26 | Rca Corporation | Amorphous silicon photovoltaic device having an insulating layer |
DE2746967C2 (de) * | 1977-10-19 | 1981-09-24 | Siemens AG, 1000 Berlin und 8000 München | Elektrofotographische Aufzeichnungstrommel |
US4265991A (en) * | 1977-12-22 | 1981-05-05 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member and process for production thereof |
DE2757301A1 (de) | 1977-12-22 | 1979-07-05 | Leybold Heraeus Gmbh & Co Kg | Vorrichtung zur umwandlung von strahlung in elektrische energie und verfahren zur herstellung der vorrichtung |
US4264962A (en) | 1978-02-07 | 1981-04-28 | Beam Engineering Kabushiki Kaisha | Small-sized electronic calculator |
US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
US4342044A (en) * | 1978-03-08 | 1982-07-27 | Energy Conversion Devices, Inc. | Method for optimizing photoresponsive amorphous alloys and devices |
US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
US4163677A (en) | 1978-04-28 | 1979-08-07 | Rca Corporation | Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier |
DE2827049A1 (de) * | 1978-06-20 | 1980-01-10 | Siemens Ag | Solarzellenbatterie und verfahren zu ihrer herstellung |
US4202928A (en) * | 1978-07-24 | 1980-05-13 | Rca Corporation | Updateable optical storage medium |
JPS5529154A (en) * | 1978-08-23 | 1980-03-01 | Shunpei Yamazaki | Semiconductor device |
JPS5559783A (en) * | 1978-10-27 | 1980-05-06 | Canon Inc | Electronic device with solar battery |
JPS5578524A (en) * | 1978-12-10 | 1980-06-13 | Shunpei Yamazaki | Manufacture of semiconductor device |
GB2038086A (en) * | 1978-12-19 | 1980-07-16 | Standard Telephones Cables Ltd | Amorphous semiconductor devices |
JPS5934421B2 (ja) * | 1979-11-29 | 1984-08-22 | 住友電気工業株式会社 | 薄膜製造法 |
DE3000889C2 (de) | 1980-01-11 | 1984-07-26 | Siemens AG, 1000 Berlin und 8000 München | Verwendung einer um zwei Rollen umlaufenden Metallfolie zum Stranggießen von amorphem Silizium |
ES8302362A1 (es) * | 1980-09-09 | 1982-12-16 | Energy Conversion Devices Inc | Metodo para preparar una aleacion amorfa fotosensible mejo- rada |
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