ES8306921A1 - Un dispositivo de union p-n o p-i-n para celulas solares. - Google Patents

Un dispositivo de union p-n o p-i-n para celulas solares.

Info

Publication number
ES8306921A1
ES8306921A1 ES512728A ES512728A ES8306921A1 ES 8306921 A1 ES8306921 A1 ES 8306921A1 ES 512728 A ES512728 A ES 512728A ES 512728 A ES512728 A ES 512728A ES 8306921 A1 ES8306921 A1 ES 8306921A1
Authority
ES
Spain
Prior art keywords
silicon
chambers
fluorine
glow discharge
gaseous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES512728A
Other languages
English (en)
Other versions
ES512728A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of ES8306921A1 publication Critical patent/ES8306921A1/es
Publication of ES512728A0 publication Critical patent/ES512728A0/es
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Plasma & Fusion (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

DISPOSITIVO DE UNION P-N O P-I-N PARA CELULAS SOLARES. EL DISPOSITIVO ESTA CONSTITUIDO POR UN SUBSTRATO QUE INCLUYE UN ELECTRODO METALICO, UN MATERIAL QUE CONTIENE POR LO MENOS UN ELEMENTO QUE INCLUYE SILICIO, TAL COMO UNA MEZCLA DE SIF Y H , DEPOSITADO SOBRE DICHO ELECTRODO CALENTADO A UNA TEMPERATURA ENTRE 500 Y 800 C MEDIANTE DEPOSICION POR DESCARGA LUMINISCENTE CONSECUTIVA DE POR LO MENOS DOS ALEACIONES DE TIPO DE CONDUCTIVIDAD OPUESTO, P Y N, SIENDO POR LO MENOS UNA DE ELLAS UNA ALEACION SUSTANCIALMENTE AMORFA. LA ALEACION QUE CONTIENE SILICIO DE TIPO P INCORPORA POR LO MENOS UN ELEMENTO METALICO P-IMPURIFICADOR, TAL COMO BORO, EVAPORADOR Y ES DEPOSITADA HASTA UN ESPESOR INFERIOR A 1000 A, Y LA ALEACION QUE CONTIENE SILICIO DE TIPO N INCORPORA POR LO MENOS UN ELEMENTO N-IMPURIFICADOR DURANTE SU DEPOSICION.
ES512728A 1980-05-19 1982-05-31 Un dispositivo de union p-n o p-i-n para celulas solares. Granted ES512728A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/151,301 US4400409A (en) 1980-05-19 1980-05-19 Method of making p-doped silicon films

Publications (2)

Publication Number Publication Date
ES8306921A1 true ES8306921A1 (es) 1983-06-01
ES512728A0 ES512728A0 (es) 1983-06-01

Family

ID=22538142

Family Applications (3)

Application Number Title Priority Date Filing Date
ES502281A Expired ES8207658A1 (es) 1980-05-19 1981-05-18 Un metodo de fabricacion de una aleacion semiconductora
ES512728A Granted ES512728A0 (es) 1980-05-19 1982-05-31 Un dispositivo de union p-n o p-i-n para celulas solares.
ES512729A Expired ES8306923A1 (es) 1980-05-19 1982-05-31 Un metodo de fabricacion de un panel fotovoltaico.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
ES502281A Expired ES8207658A1 (es) 1980-05-19 1981-05-18 Un metodo de fabricacion de una aleacion semiconductora

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES512729A Expired ES8306923A1 (es) 1980-05-19 1982-05-31 Un metodo de fabricacion de un panel fotovoltaico.

Country Status (19)

Country Link
US (1) US4400409A (es)
JP (5) JPS5743413A (es)
KR (3) KR840000756B1 (es)
AU (3) AU542845B2 (es)
BR (1) BR8103030A (es)
CA (1) CA1184096A (es)
DE (3) DE3153269C2 (es)
ES (3) ES8207658A1 (es)
FR (1) FR2482786B1 (es)
GB (3) GB2076433B (es)
IE (1) IE52688B1 (es)
IL (1) IL62883A (es)
IN (1) IN155670B (es)
IT (1) IT1135827B (es)
MX (1) MX155307A (es)
NL (1) NL8102411A (es)
PH (1) PH18408A (es)
SE (1) SE456380B (es)
ZA (1) ZA813076B (es)

Families Citing this family (137)

* Cited by examiner, † Cited by third party
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