FR2455362A1 - Procede de realisation de cellules solaires, a base de silicium polycristallin depose sur du carbone, et cellules solaires ainsi obtenues - Google Patents
Procede de realisation de cellules solaires, a base de silicium polycristallin depose sur du carbone, et cellules solaires ainsi obtenuesInfo
- Publication number
- FR2455362A1 FR2455362A1 FR7910190A FR7910190A FR2455362A1 FR 2455362 A1 FR2455362 A1 FR 2455362A1 FR 7910190 A FR7910190 A FR 7910190A FR 7910190 A FR7910190 A FR 7910190A FR 2455362 A1 FR2455362 A1 FR 2455362A1
- Authority
- FR
- France
- Prior art keywords
- carbon substrate
- doped
- mfr
- solar cell
- carbide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052799 carbon Inorganic materials 0.000 title abstract 3
- 238000000151 deposition Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 title abstract 3
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
- 239000002019 doping agent Substances 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
L'INVENTION CONCERNE L'INDUSTRIE DES CELLULES SOLAIRES, OBTENUES PAR DEPOT DE SILICIUM POLYCRISTALLIN, SUR DES SUBSTRATS DE CARBONE. ELLE VISE A OBTENIR DES CELLULES SOLAIRES PRESENTANT DE MEILLEURES CARACTERISTIQUES. L'INVENTION EST REMARQUABLE EN CE QU'ELLE CONSISTE A DOPER LA COUCHE INTERMEDIAIRE DE CARBURE DE SILICIUM, AU MOYEN D'IMPURETES DOPANTES PROCURANT LE MEME TYPE DE CONDUCTIVITE QUE CELLE DE LA COUCHE DE SILICIUM IMMEDIATEMENT ADJACENTE, PAR EXEMPLE DU BORE POUR UNE COUCHE DE TYPE P.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7910190A FR2455362A1 (fr) | 1979-04-23 | 1979-04-23 | Procede de realisation de cellules solaires, a base de silicium polycristallin depose sur du carbone, et cellules solaires ainsi obtenues |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7910190A FR2455362A1 (fr) | 1979-04-23 | 1979-04-23 | Procede de realisation de cellules solaires, a base de silicium polycristallin depose sur du carbone, et cellules solaires ainsi obtenues |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2455362A1 true FR2455362A1 (fr) | 1980-11-21 |
FR2455362B1 FR2455362B1 (fr) | 1982-09-03 |
Family
ID=9224598
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7910190A Granted FR2455362A1 (fr) | 1979-04-23 | 1979-04-23 | Procede de realisation de cellules solaires, a base de silicium polycristallin depose sur du carbone, et cellules solaires ainsi obtenues |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2455362A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4571448A (en) * | 1981-11-16 | 1986-02-18 | University Of Delaware | Thin film photovoltaic solar cell and method of making the same |
WO2010026343A1 (fr) * | 2008-09-05 | 2010-03-11 | Commissariat A L'energie Atomique | Procede de preparation d'une couche mince auto-supportee de silicium cristallise |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3078328A (en) * | 1959-11-12 | 1963-02-19 | Texas Instruments Inc | Solar cell |
US3961997A (en) * | 1975-05-12 | 1976-06-08 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Fabrication of polycrystalline solar cells on low-cost substrates |
US4137355A (en) * | 1976-12-09 | 1979-01-30 | Honeywell Inc. | Ceramic coated with molten silicon |
-
1979
- 1979-04-23 FR FR7910190A patent/FR2455362A1/fr active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3078328A (en) * | 1959-11-12 | 1963-02-19 | Texas Instruments Inc | Solar cell |
US3961997A (en) * | 1975-05-12 | 1976-06-08 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Fabrication of polycrystalline solar cells on low-cost substrates |
US4137355A (en) * | 1976-12-09 | 1979-01-30 | Honeywell Inc. | Ceramic coated with molten silicon |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4571448A (en) * | 1981-11-16 | 1986-02-18 | University Of Delaware | Thin film photovoltaic solar cell and method of making the same |
WO2010026343A1 (fr) * | 2008-09-05 | 2010-03-11 | Commissariat A L'energie Atomique | Procede de preparation d'une couche mince auto-supportee de silicium cristallise |
FR2935838A1 (fr) * | 2008-09-05 | 2010-03-12 | Commissariat Energie Atomique | Procede de preparation d'une couche mince auto-supportee de silicium cristallise |
CN102144283A (zh) * | 2008-09-05 | 2011-08-03 | 原子能与替代能源委员会 | 制备自支撑式晶化硅薄膜的方法 |
CN102144283B (zh) * | 2008-09-05 | 2013-10-30 | 原子能与替代能源委员会 | 制备自支撑式晶化硅薄膜的方法及其所获得的产品 |
Also Published As
Publication number | Publication date |
---|---|
FR2455362B1 (fr) | 1982-09-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name | ||
ST | Notification of lapse |