JPS5649580A - Preparation of semiconductor infrared-ray detecting element - Google Patents

Preparation of semiconductor infrared-ray detecting element

Info

Publication number
JPS5649580A
JPS5649580A JP12592479A JP12592479A JPS5649580A JP S5649580 A JPS5649580 A JP S5649580A JP 12592479 A JP12592479 A JP 12592479A JP 12592479 A JP12592479 A JP 12592479A JP S5649580 A JPS5649580 A JP S5649580A
Authority
JP
Japan
Prior art keywords
layer
junction
detecting element
ray detecting
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12592479A
Other languages
Japanese (ja)
Other versions
JPS6161552B2 (en
Inventor
Takayasu Fukuda
Mitsuo Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12592479A priority Critical patent/JPS5649580A/en
Publication of JPS5649580A publication Critical patent/JPS5649580A/en
Publication of JPS6161552B2 publication Critical patent/JPS6161552B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain a high response speed infrared-ray detecting element by a construction wherein the capacity and sheet resistivity of an Hg1-XCdXTe P-N junction are lowered so that most of the photons are absorbed in a P type crystal layer. CONSTITUTION:An N type Hg1-XCdXTe 1 is heated to extract Hg and to make a P type substrate 2. Then ZnS 3 is deposited on the substrate and an opening is made in the layer 3 to diffuse Hg. An N layer 4 is formed by filling up the empty grid of the substrate 2 to selectively form a P-N junction 5. In addition, an N<+> layer 6 is formed by injecting B ions in order to obtain a double layer. With such a construction as this, the sheet resistivity of the P type substrate is lowered because of the N<+> layer 6, while the junction capacity is made smaller because a depletion layer is provided in the P-N junction. If the double layer consisting the layers 4-6 is allowed to have a thickness of about 3mum, infrared-ray photons to be injected can be fallen on the P layer which is almost nearly fast as carrier transferring, so that a high response speed infrared-ray detecting element can be obtained.
JP12592479A 1979-09-28 1979-09-28 Preparation of semiconductor infrared-ray detecting element Granted JPS5649580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12592479A JPS5649580A (en) 1979-09-28 1979-09-28 Preparation of semiconductor infrared-ray detecting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12592479A JPS5649580A (en) 1979-09-28 1979-09-28 Preparation of semiconductor infrared-ray detecting element

Publications (2)

Publication Number Publication Date
JPS5649580A true JPS5649580A (en) 1981-05-06
JPS6161552B2 JPS6161552B2 (en) 1986-12-26

Family

ID=14922313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12592479A Granted JPS5649580A (en) 1979-09-28 1979-09-28 Preparation of semiconductor infrared-ray detecting element

Country Status (1)

Country Link
JP (1) JPS5649580A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6316022U (en) * 1986-07-17 1988-02-02
JPH0936411A (en) * 1995-07-17 1997-02-07 Nec Corp Fabrication of infrared detector

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6316022U (en) * 1986-07-17 1988-02-02
JPH039701Y2 (en) * 1986-07-17 1991-03-11
JPH0936411A (en) * 1995-07-17 1997-02-07 Nec Corp Fabrication of infrared detector

Also Published As

Publication number Publication date
JPS6161552B2 (en) 1986-12-26

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