ES478454A1 - Un metodo de preparacion de una pelicula semiconductora. - Google Patents

Un metodo de preparacion de una pelicula semiconductora.

Info

Publication number
ES478454A1
ES478454A1 ES478454A ES478454A ES478454A1 ES 478454 A1 ES478454 A1 ES 478454A1 ES 478454 A ES478454 A ES 478454A ES 478454 A ES478454 A ES 478454A ES 478454 A1 ES478454 A1 ES 478454A1
Authority
ES
Spain
Prior art keywords
amorphous semiconductor
semiconductors
semiconductor film
alterant
different
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES478454A
Other languages
English (en)
Inventor
Stanford R Ovshinsky
Arun Madan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of ES478454A1 publication Critical patent/ES478454A1/es
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/28—Deposition of only one other non-metal element
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/0825—Silicon-based comprising five or six silicon-based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08278—Depositing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02592—Microstructure amorphous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/061—Gettering-armorphous layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Ceramic Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Un método de preparación de una película semiconductora amorfa o similar, con propiedades fotoconductoras y/u otras interesantes, consiste en depositar sobre un sustrato una película semiconductora amorfa sólida, por descomposición mediante descarga luminiscente de n compuesto en una atmósfera que independientemente contiene por lo menos otro elemento alterante, donde se incorpora una multiplicidad de diferentes elementos alterantes a dicha película semiconductora amorfa durante la deposición de la misma, dando un material semiconductor amorfo alterado con densidad menor de estados localizados en el intervalo de energía del mismo, de manera que se obtienen longitudes de difusión considerablemente aumentadas para aplicación en células solares y pueden agregarse efectivamente modificadores o dopantes para producir películas semiconductoras amorfas de tipo p o n de manera que las películas funcionan como los semiconductores cristalinos similares.
ES478454A 1978-03-16 1979-03-08 Un metodo de preparacion de una pelicula semiconductora. Expired ES478454A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/887,353 US4226898A (en) 1978-03-16 1978-03-16 Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process

Publications (1)

Publication Number Publication Date
ES478454A1 true ES478454A1 (es) 1980-01-16

Family

ID=41510735

Family Applications (1)

Application Number Title Priority Date Filing Date
ES478454A Expired ES478454A1 (es) 1978-03-16 1979-03-08 Un metodo de preparacion de una pelicula semiconductora.

Country Status (12)

Country Link
US (1) US4226898A (es)
AU (1) AU523424B2 (es)
CA (1) CA1125896A (es)
DE (2) DE2943211C2 (es)
EG (1) EG13885A (es)
ES (1) ES478454A1 (es)
FR (1) FR2432765A1 (es)
IL (1) IL56870A (es)
IN (1) IN151380B (es)
MX (1) MX5024E (es)
WO (1) WO1979000776A1 (es)
ZA (1) ZA791230B (es)

Families Citing this family (262)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5459074A (en) * 1977-10-20 1979-05-12 Toshiba Corp Semiconductor device
AU530905B2 (en) * 1977-12-22 1983-08-04 Canon Kabushiki Kaisha Electrophotographic photosensitive member
DE2954551C2 (es) * 1978-03-03 1989-02-09 Canon K.K., Tokio/Tokyo, Jp
US4342044A (en) * 1978-03-08 1982-07-27 Energy Conversion Devices, Inc. Method for optimizing photoresponsive amorphous alloys and devices
US4492810A (en) * 1978-03-08 1985-01-08 Sovonics Solar Systems Optimized doped and band gap adjusted photoresponsive amorphous alloys and devices
US4471042A (en) * 1978-05-04 1984-09-11 Canon Kabushiki Kaisha Image-forming member for electrophotography comprising hydrogenated amorphous matrix of silicon and/or germanium
US4565731A (en) * 1978-05-04 1986-01-21 Canon Kabushiki Kaisha Image-forming member for electrophotography
DE2836911C2 (de) * 1978-08-23 1986-11-06 Siemens AG, 1000 Berlin und 8000 München Passivierungsschicht für Halbleiterbauelemente
GB2038086A (en) * 1978-12-19 1980-07-16 Standard Telephones Cables Ltd Amorphous semiconductor devices
JPS55127561A (en) * 1979-03-26 1980-10-02 Canon Inc Image forming member for electrophotography
JPS5662254A (en) * 1979-10-24 1981-05-28 Canon Inc Electrophotographic imaging material
US5382487A (en) * 1979-12-13 1995-01-17 Canon Kabushiki Kaisha Electrophotographic image forming member
IL61678A (en) * 1979-12-13 1984-04-30 Energy Conversion Devices Inc Programmable cell and programmable electronic arrays comprising such cells
DE3046509A1 (de) * 1979-12-13 1981-08-27 Canon K.K., Tokyo Elektrophotographisches bilderzeugungsmaterial
DD150318A3 (de) * 1980-02-08 1981-08-26 Rainer Moeller Verfahren und rohrreaktor zur plasmachemischen dampfphasenabscheidung und zum plasmaaetzen
JPS5713777A (en) 1980-06-30 1982-01-23 Shunpei Yamazaki Semiconductor device and manufacture thereof
US4405915A (en) * 1980-03-28 1983-09-20 Canon Kabushiki Kaisha Photoelectric transducing element
US4339255A (en) * 1980-09-09 1982-07-13 Energy Conversion Devices, Inc. Method and apparatus for making a modified amorphous glass material
DE3117037C2 (de) * 1980-05-08 1987-05-14 Takao Sakai Osaka Kawamura Elektrophotografisches Aufzeichnungsmaterial
US4410558A (en) * 1980-05-19 1983-10-18 Energy Conversion Devices, Inc. Continuous amorphous solar cell production system
US4400409A (en) * 1980-05-19 1983-08-23 Energy Conversion Devices, Inc. Method of making p-doped silicon films
JPS56165371A (en) * 1980-05-26 1981-12-18 Shunpei Yamazaki Semiconductor device
JPS574172A (en) * 1980-06-09 1982-01-09 Canon Inc Light conductive member
JPS574053A (en) * 1980-06-09 1982-01-09 Canon Inc Photoconductive member
US4971872A (en) * 1980-06-25 1990-11-20 Shunpei Yamazaki Electrostatic photocopying machine
US5143808A (en) * 1980-06-25 1992-09-01 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US4889782A (en) * 1980-06-25 1989-12-26 Semiconductor Energy Laboratory Co., Ltd. Electrostatic photocopying machine
US5545503A (en) * 1980-06-25 1996-08-13 Semiconductor Energy Laboratory Co., Ltd. Method of making printing member for electrostatic photocopying
JPS5711351A (en) * 1980-06-25 1982-01-21 Shunpei Yamazaki Electrostatic copying machine
US5070364A (en) * 1980-06-25 1991-12-03 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US4999270A (en) * 1980-06-25 1991-03-12 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US4889783A (en) * 1980-06-25 1989-12-26 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5103262A (en) * 1980-06-25 1992-04-07 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5008171A (en) * 1980-06-25 1991-04-16 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5144367A (en) * 1980-06-25 1992-09-01 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5859443A (en) * 1980-06-30 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US5262350A (en) * 1980-06-30 1993-11-16 Semiconductor Energy Laboratory Co., Ltd. Forming a non single crystal semiconductor layer by using an electric current
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPS5730325A (en) * 1980-07-30 1982-02-18 Nec Corp Manufacture of amorphous silicon thin film
JPS5739588A (en) * 1980-08-22 1982-03-04 Fuji Photo Film Co Ltd Solid state image pickup device
JPS5744154A (en) * 1980-08-29 1982-03-12 Canon Inc Electrophotographic image formation member
JPS5748735A (en) * 1980-09-08 1982-03-20 Canon Inc Manufacture of image forming member for electrophotography
GB2083703B (en) * 1980-09-09 1985-04-17 Energy Conversion Devices Inc Amorphous semiconductors
IN157458B (es) * 1980-09-09 1986-04-05 Energy Conversion Devices Inc
DE3135375C2 (de) * 1980-09-09 1995-02-23 Energy Conversion Devices Inc Verfahren zum Herstellen einer lichtempfindlichen amorphen Legierung
KR890000479B1 (ko) * 1980-09-09 1989-03-18 에너지 컨버션 디바이시즈, 인코포레이리드 광응답 비정질 합금 제조방법 및 그 합금과 그로부터 만든 디바이스
US4522663A (en) * 1980-09-09 1985-06-11 Sovonics Solar Systems Method for optimizing photoresponsive amorphous alloys and devices
US4394425A (en) * 1980-09-12 1983-07-19 Canon Kabushiki Kaisha Photoconductive member with α-Si(C) barrier layer
JPS5754959A (en) * 1980-09-18 1982-04-01 Canon Inc Printing method
US4394426A (en) * 1980-09-25 1983-07-19 Canon Kabushiki Kaisha Photoconductive member with α-Si(N) barrier layer
US4409308A (en) * 1980-10-03 1983-10-11 Canon Kabuskiki Kaisha Photoconductive member with two amorphous silicon layers
US4403026A (en) * 1980-10-14 1983-09-06 Canon Kabushiki Kaisha Photoconductive member having an electrically insulating oxide layer
JPS5767020A (en) * 1980-10-15 1982-04-23 Agency Of Ind Science & Technol Thin silicon film and its manufacture
JPS5767938A (en) * 1980-10-16 1982-04-24 Canon Inc Production of photoconductive member
US4499557A (en) * 1980-10-28 1985-02-12 Energy Conversion Devices, Inc. Programmable cell for use in programmable electronic arrays
US4358326A (en) * 1980-11-03 1982-11-09 International Business Machines Corporation Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing
US4891074A (en) * 1980-11-13 1990-01-02 Energy Conversion Devices, Inc. Multiple cell photoresponsive amorphous alloys and devices
CA1176740A (en) * 1980-12-03 1984-10-23 Yoshihisa Tawada High-voltage photovoltaic cell having a hetero junction of amorphous semiconductor and amorphous silicon
JPS57104938A (en) * 1980-12-22 1982-06-30 Canon Inc Image forming member for electrophotography
GB2095030B (en) * 1981-01-08 1985-06-12 Canon Kk Photoconductive member
DE3200376A1 (de) * 1981-01-09 1982-11-04 Canon K.K., Tokyo Fotoleitfaehiges element
US5582947A (en) * 1981-01-16 1996-12-10 Canon Kabushiki Kaisha Glow discharge process for making photoconductive member
US4539283A (en) * 1981-01-16 1985-09-03 Canon Kabushiki Kaisha Amorphous silicon photoconductive member
US4490453A (en) * 1981-01-16 1984-12-25 Canon Kabushiki Kaisha Photoconductive member of a-silicon with nitrogen
US5258250A (en) * 1981-01-16 1993-11-02 Canon Kabushiki Kaisha Photoconductive member
US4464451A (en) * 1981-02-06 1984-08-07 Canon Kabushiki Kaisha Electrophotographic image-forming member having aluminum oxide layer on a substrate
US4868614A (en) * 1981-02-09 1989-09-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting semiconductor device matrix with non-single-crystalline semiconductor
US4527179A (en) * 1981-02-09 1985-07-02 Semiconductor Energy Laboratory Co., Ltd. Non-single-crystal light emitting semiconductor device
US4441113A (en) * 1981-02-13 1984-04-03 Energy Conversion Devices, Inc. P-Type semiconductor material having a wide band gap
IE53485B1 (en) * 1981-02-12 1988-11-23 Energy Conversion Devices Inc Improved photoresponsive amorphous alloys
US4340462A (en) * 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
US4339470A (en) * 1981-02-13 1982-07-13 Rca Corporation Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer
DE3208494C2 (de) * 1981-03-09 1993-09-30 Canon Kk Verfahren zur Herstellung eines fotoleitfähigen Elements
DE3270551D1 (en) * 1981-03-16 1986-05-22 Energy Conversion Devices Inc Optical methods for controlling layer thickness
US4379181A (en) * 1981-03-16 1983-04-05 Energy Conversion Devices, Inc. Method for plasma deposition of amorphous materials
US4542711A (en) * 1981-03-16 1985-09-24 Sovonics Solar Systems Continuous system for depositing amorphous semiconductor material
US4409311A (en) * 1981-03-25 1983-10-11 Minolta Camera Kabushiki Kaisha Photosensitive member
JPS57177156A (en) * 1981-04-24 1982-10-30 Canon Inc Photoconductive material
EP0066787B1 (en) * 1981-05-29 1989-11-15 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Process for preparing amorphous silicon semiconductor
US4402762A (en) * 1981-06-02 1983-09-06 John Puthenveetil K Method of making highly stable modified amorphous silicon and germanium films
US4460673A (en) * 1981-06-03 1984-07-17 Fuji Electric Company, Ltd. Method of producing amorphous silicon layer and its manufacturing apparatus
DE3124810A1 (de) * 1981-06-24 1983-01-13 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen amorpher selenschichten mit und ohne dotierende zusaetze, sowie eine durch das verfahren hergestellte oberflaechenschicht einer fotoleitertrommel
US4523214A (en) * 1981-07-03 1985-06-11 Fuji Photo Film Co., Ltd. Solid state image pickup device utilizing microcrystalline and amorphous silicon
DE3277665D1 (en) * 1981-08-07 1987-12-17 British Petroleum Co Plc Non-volatile electrically programmable memory device
DE3249030T1 (de) * 1981-09-26 1983-12-01 Konishiroku Photo Industry Co., Ltd., Tokyo Halbleitermaterial und verfahren zu dessen herstellung
US4536460A (en) * 1981-11-09 1985-08-20 Canon Kabushiki Kaisha Photoconductive member
US4401687A (en) * 1981-11-12 1983-08-30 Advanced Semiconductor Materials America Plasma deposition of silicon
US4423133A (en) * 1981-11-17 1983-12-27 Canon Kabushiki Kaisha Photoconductive member of amorphous silicon
US4460669A (en) * 1981-11-26 1984-07-17 Canon Kabushiki Kaisha Photoconductive member with α-Si and C, U or D and dopant
US4460670A (en) * 1981-11-26 1984-07-17 Canon Kabushiki Kaisha Photoconductive member with α-Si and C, N or O and dopant
US4379943A (en) * 1981-12-14 1983-04-12 Energy Conversion Devices, Inc. Current enhanced photovoltaic device
GB2111534A (en) * 1981-12-16 1983-07-06 Energy Conversion Devices Inc Making photoresponsive amorphous alloys and devices by reactive plasma sputtering
US4465750A (en) * 1981-12-22 1984-08-14 Canon Kabushiki Kaisha Photoconductive member with a -Si having two layer regions
GB2115570B (en) * 1981-12-28 1985-07-10 Canon Kk Photoconductive member
US4508931A (en) * 1981-12-30 1985-04-02 Stauffer Chemical Company Catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them
US4620968A (en) * 1981-12-30 1986-11-04 Stauffer Chemical Company Monoclinic phosphorus formed from vapor in the presence of an alkali metal
US4532196A (en) * 1982-01-25 1985-07-30 Stanley Electric Co., Ltd. Amorphous silicon photoreceptor with nitrogen and boron
DE3303266A1 (de) * 1982-02-01 1983-08-11 Canon K.K., Tokyo Fotoeleitfaehiges element
US4522905A (en) * 1982-02-04 1985-06-11 Canon Kk Amorphous silicon photoconductive member with interface and rectifying layers
US4452874A (en) * 1982-02-08 1984-06-05 Canon Kabushiki Kaisha Photoconductive member with multiple amorphous Si layers
US4452875A (en) * 1982-02-15 1984-06-05 Canon Kabushiki Kaisha Amorphous photoconductive member with α-Si interlayers
US4795688A (en) * 1982-03-16 1989-01-03 Canon Kabushiki Kaisha Layered photoconductive member comprising amorphous silicon
US4423701A (en) * 1982-03-29 1984-01-03 Energy Conversion Devices, Inc. Glow discharge deposition apparatus including a non-horizontally disposed cathode
US4396793A (en) * 1982-04-12 1983-08-02 Chevron Research Company Compensated amorphous silicon solar cell
EP0095283A3 (en) * 1982-05-15 1984-12-27 The British Petroleum Company p.l.c. Memory device
JPH0658966B2 (ja) * 1982-05-17 1994-08-03 キヤノン株式会社 半導体素子
JPS58219732A (ja) * 1982-06-16 1983-12-21 Tokyo Inst Of Technol フツ素含有アモルフアス半導体の製造方法
US4461239A (en) * 1982-07-30 1984-07-24 Energy Conversion Devices, Inc. Reduced capacitance electrode assembly
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US5391893A (en) * 1985-05-07 1995-02-21 Semicoductor Energy Laboratory Co., Ltd. Nonsingle crystal semiconductor and a semiconductor device using such semiconductor
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US5468653A (en) * 1982-08-24 1995-11-21 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
JPS59115574A (ja) 1982-12-23 1984-07-04 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
US4454835A (en) * 1982-09-13 1984-06-19 The United States Of America As Represented By The Secretary Of The Navy Internal photolysis reactor
US4615905A (en) * 1982-09-24 1986-10-07 Sovonics Solar Systems, Inc. Method of depositing semiconductor films by free radical generation
US4745000A (en) * 1982-09-24 1988-05-17 Energy Conversion Devices, Inc. Method of fabricating electrostatic drums using microwave energy
US4504518A (en) * 1982-09-24 1985-03-12 Energy Conversion Devices, Inc. Method of making amorphous semiconductor alloys and devices using microwave energy
US4664937A (en) * 1982-09-24 1987-05-12 Energy Conversion Devices, Inc. Method of depositing semiconductor films by free radical generation
US4517223A (en) * 1982-09-24 1985-05-14 Sovonics Solar Systems Method of making amorphous semiconductor alloys and devices using microwave energy
AU560521B2 (en) * 1982-10-18 1987-04-09 Energy Conversion Devices Inc. Layered amorphous semiconductor alloys
NL8204056A (nl) * 1982-10-21 1984-05-16 Oce Nederland Bv Fotogeleidend element voor toepassing in elektrofotografische kopieerprocessen.
US4515107A (en) * 1982-11-12 1985-05-07 Sovonics Solar Systems Apparatus for the manufacture of photovoltaic devices
AU562641B2 (en) 1983-01-18 1987-06-18 Energy Conversion Devices Inc. Electronic matrix array
US4569120A (en) * 1983-03-07 1986-02-11 Signetics Corporation Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing ion implantation
US4546372A (en) * 1983-04-11 1985-10-08 United Technologies Corporation Phosphorous-nitrogen based glasses for the passivation of III-V semiconductor materials
US4443489A (en) * 1983-05-10 1984-04-17 United Technologies Corporation Method for the formation of phosphorous-nitrogen based glasses useful for the passivation of III-V semiconductor materials
US4511638A (en) * 1983-06-01 1985-04-16 Energy Conversion Devices, Inc. Photoresponsive amorphous semiconductor materials, methods of making the same, and photoanodes made therewith
JPH0627948B2 (ja) * 1983-07-15 1994-04-13 キヤノン株式会社 光導電部材
ES534427A0 (es) * 1983-07-18 1985-11-01 Energy Conversion Devices Inc Una aleacion amorfa mejorada de separacion de bandas estrecha, para aplicaciones fotovoltaicas
US4569697A (en) * 1983-08-26 1986-02-11 Energy Conversion Devices, Inc. Method of forming photovoltaic quality amorphous alloys by passivating defect states
US4642144A (en) * 1983-10-06 1987-02-10 Exxon Research And Engineering Company Proximity doping of amorphous semiconductors
JPS6083957A (ja) * 1983-10-13 1985-05-13 Sharp Corp 電子写真感光体
US4579797A (en) * 1983-10-25 1986-04-01 Canon Kabushiki Kaisha Photoconductive member with amorphous germanium and silicon regions, nitrogen and dopant
US4544617A (en) * 1983-11-02 1985-10-01 Xerox Corporation Electrophotographic devices containing overcoated amorphous silicon compositions
US4620208A (en) * 1983-11-08 1986-10-28 Energy Conversion Devices, Inc. High performance, small area thin film transistor
ZA849070B (en) * 1983-12-07 1985-07-31 Energy Conversion Devices Inc Semiconducting multilayered structures and systems and methods for synthesizing the structures and devices incorporating the structures
DE3570782D1 (en) 1984-01-23 1989-07-06 Energy Conversion Devices Inc Liquid crystal displays operated by amorphous silicon alloy diodes
US5061040A (en) * 1984-01-23 1991-10-29 Ois Optical Imaging Systems, Inc. Liquid crystal displays operated by amorphous silicon alloy diodes
US4619729A (en) 1984-02-14 1986-10-28 Energy Conversion Devices, Inc. Microwave method of making semiconductor members
EP0154160B2 (en) * 1984-02-14 1992-10-21 Energy Conversion Devices, Inc. Method and apparatus for making electrophotographic devices
JPS60200523A (ja) * 1984-03-26 1985-10-11 Agency Of Ind Science & Technol シリコン薄膜の製造法
US4720443A (en) * 1984-04-05 1988-01-19 Canon Kabushiki Kaisha Member having light receiving layer with nonparallel interfaces
CA1279127C (en) * 1984-05-04 1991-01-15 Vincent D. Cannella Integrated radiation sensing array
US4691243A (en) * 1984-05-04 1987-09-01 Energy Conversion Devices, Inc. Contact-type document scanner including protective coating
US4660095A (en) * 1984-05-04 1987-04-21 Energy Conversion Devices, Inc. Contact-type document scanner and method
US4768096A (en) * 1984-05-04 1988-08-30 Energy Conversion Devices, Inc. Contact-type portable digitizing wand for scanning image-bearing surfaces
US4675739A (en) * 1984-05-04 1987-06-23 Energy Conversion Devices, Inc. Integrated radiation sensing array
US4868664A (en) * 1984-05-04 1989-09-19 Energy Conversion Devices, Inc. Contact type image replication employing a light piping faceplate
US4672454A (en) * 1984-05-04 1987-06-09 Energy Conversion Devices, Inc. X-ray image scanner and method
US4691244A (en) * 1984-05-04 1987-09-01 Energy Conversion Devices, Inc. Contact-type document scanner including static shield
US4777534A (en) * 1986-09-29 1988-10-11 Energy Conversion Devices, Inc. Light piping substrate for contact type image replication
US4670763A (en) * 1984-05-14 1987-06-02 Energy Conversion Devices, Inc. Thin film field effect transistor
US4673957A (en) * 1984-05-14 1987-06-16 Energy Conversion Devices, Inc. Integrated circuit compatible thin film field effect transistor and method of making same
US4668968A (en) * 1984-05-14 1987-05-26 Energy Conversion Devices, Inc. Integrated circuit compatible thin film field effect transistor and method of making same
US4727044A (en) 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
US4589733A (en) * 1984-06-29 1986-05-20 Energy Conversion Devices, Inc. Displays and subassemblies having improved pixel electrodes
JPS6188578A (ja) * 1984-10-08 1986-05-06 Nec Corp 非線形素子
US4698104A (en) * 1984-12-06 1987-10-06 Xerox Corporation Controlled isotropic doping of semiconductor materials
JPS61136220A (ja) * 1984-12-07 1986-06-24 Fuji Electric Co Ltd 微結晶シリコン膜の形成方法
US4657777A (en) * 1984-12-17 1987-04-14 Canon Kabushiki Kaisha Formation of deposited film
US4566403A (en) * 1985-01-30 1986-01-28 Sovonics Solar Systems Apparatus for microwave glow discharge deposition
US4630355A (en) * 1985-03-08 1986-12-23 Energy Conversion Devices, Inc. Electric circuits having repairable circuit lines and method of making the same
US4637895A (en) * 1985-04-01 1987-01-20 Energy Conversion Devices, Inc. Gas mixtures for the vapor deposition of semiconductor material
US4582773A (en) * 1985-05-02 1986-04-15 Energy Conversion Devices, Inc. Electrophotographic photoreceptor and method for the fabrication thereof
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer
US5296405A (en) * 1985-08-02 1994-03-22 Semiconductor Energy Laboratory Co.., Ltd. Method for photo annealing non-single crystalline semiconductor films
US5753542A (en) * 1985-08-02 1998-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
DE3689735T2 (de) * 1985-08-02 1994-06-30 Semiconductor Energy Lab Verfahren und Gerät zur Herstellung von Halbleitervorrichtungen.
US5171710A (en) * 1985-08-02 1992-12-15 Semiconductor Energy Laboratory Co., Ltd. Method for photo annealing non-single crystalline semiconductor films
US4914490A (en) * 1985-08-28 1990-04-03 Canon Kabushiki Kaisha Non-single crystal electroluminescent device
US4987460A (en) * 1985-08-29 1991-01-22 Canon Kabushiki Kaisha Light emitting device
US4801474A (en) * 1986-01-14 1989-01-31 Canon Kabushiki Kaisha Method for forming thin film multi-layer structure member
US4868014A (en) * 1986-01-14 1989-09-19 Canon Kabushiki Kaisha Method for forming thin film multi-layer structure member
JPH084072B2 (ja) * 1986-01-14 1996-01-17 キヤノン株式会社 堆積膜形成法
US5032193A (en) * 1986-01-21 1991-07-16 Energy Conversion Devices, Inc. Method of making synthetically engineered materials
CA1269164A (en) * 1986-03-24 1990-05-15 Metin Aktik Photosensitive diode with hydrogenated amorphous silicon layer
US4877650A (en) * 1986-03-31 1989-10-31 Canon Kabushiki Kaisha Method for forming deposited film
JPS62228471A (ja) * 1986-03-31 1987-10-07 Canon Inc 堆積膜形成法
EP0241317B1 (en) * 1986-04-11 1993-03-10 Canon Kabushiki Kaisha Process for forming deposited film
US5042917A (en) * 1986-04-25 1991-08-27 Matsushita Electric Industrial Co., Ltd. Liquid crystal matrix display unit
CH668145A5 (fr) * 1986-09-26 1988-11-30 Inst Microtechnique De L Unive Procede et installation de depot de silicium amorphe hydrogene sur un substrat dans une enceinte a plasma.
US4868616A (en) * 1986-12-11 1989-09-19 Energy Conversion Devices, Inc. Amorphous electronic matrix array for liquid crystal display
US4761302A (en) * 1987-05-01 1988-08-02 The United States Department Of Energy Fluorination of amorphous thin-film materials with xenon fluoride
CA1303194C (en) 1987-07-21 1992-06-09 Katsumi Nakagawa Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least zn, se and h in an amount of 1 to40 atomic %
EP0301903A3 (en) 1987-07-31 1990-07-11 Canon Kabushiki Kaisha Functional znse1-xtex: h deposited film
JPS6436086A (en) * 1987-07-31 1989-02-07 Canon Kk Functional deposition film
EP0317350B1 (en) 1987-11-20 1995-06-21 Canon Kabushiki Kaisha A pin function photovoltaic element, tandem und triple cells
US4885220A (en) * 1988-05-25 1989-12-05 Xerox Corporation Amorphous silicon carbide electroreceptors
NL8801379A (nl) * 1988-05-30 1989-12-18 Imec Inter Uni Micro Electr Werkwijze voor het vervaardigen van een dunne-filmtransistor en een dergelijke dunne-filmtransistor.
GB8816632D0 (en) * 1988-07-13 1988-08-17 Raychem Ltd Electrical device
DE3834356A1 (de) * 1988-10-06 1990-04-12 Schering Ag Verfahren zur herstellung duenner molybdaensulfidfilme
JP2644309B2 (ja) * 1988-11-04 1997-08-25 株式会社東芝 半導体製造装置
US5008617A (en) * 1989-06-20 1991-04-16 Energy Conversion Devices, Inc. Functional testing of ultra large area, ultra large scale integrated circuits
US5989943A (en) * 1989-09-07 1999-11-23 Quicklogic Corporation Method for fabrication of programmable interconnect structure
US5502315A (en) * 1989-09-07 1996-03-26 Quicklogic Corporation Electrically programmable interconnect structure having a PECVD amorphous silicon element
EP1069610A2 (en) * 1990-01-08 2001-01-17 Lsi Logic Corporation Refractory metal deposition process for low contact resistivity to silicon and corresponding apparatus
US5552627A (en) * 1990-04-12 1996-09-03 Actel Corporation Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayers
US5092939A (en) * 1990-11-30 1992-03-03 United Solar Systems Corporation Photovoltaic roof and method of making same
US5330630A (en) * 1991-01-02 1994-07-19 Energy Conversion Devices, Inc. Switch with improved threshold voltage
JPH06505368A (ja) * 1991-01-17 1994-06-16 クロスポイント・ソルーションズ・インコーポレイテッド フィールドプログラム可能なゲートアレイに使用するための改良されたアンチヒューズ回路構造およびその製造方法
WO1992014268A1 (en) * 1991-01-30 1992-08-20 Minnesota Mining And Manufacturing Company Polysilicon thin film transistor
US5578520A (en) * 1991-05-28 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US5637537A (en) * 1991-06-27 1997-06-10 United Solar Systems Corporation Method of severing a thin film semiconductor device
US5766344A (en) * 1991-09-21 1998-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
US5221854A (en) * 1991-11-18 1993-06-22 United Solar Systems Corporation Protective layer for the back reflector of a photovoltaic device
US5256576A (en) * 1992-02-14 1993-10-26 United Solar Systems Corporation Method of making pin junction semiconductor device with RF deposited intrinsic buffer layer
US5254480A (en) * 1992-02-20 1993-10-19 Minnesota Mining And Manufacturing Company Process for producing a large area solid state radiation detector
US5298086A (en) * 1992-05-15 1994-03-29 United Solar Systems Corporation Method for the manufacture of improved efficiency tandem photovoltaic device and device manufactured thereby
US5294846A (en) * 1992-08-17 1994-03-15 Paivinen John O Method and apparatus for programming anti-fuse devices
US7097712B1 (en) 1992-12-04 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Apparatus for processing a semiconductor
US6413805B1 (en) 1993-03-12 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device forming method
WO1994022172A1 (en) * 1993-03-24 1994-09-29 E.I. Du Pont De Nemours And Company Solar panels and process for manufacture thereof
FR2703797B1 (fr) * 1993-04-06 1995-06-23 Matra Mhs Procede et dispositif de controle de la teneur en bore de borophosphosilicate.
JPH06349735A (ja) 1993-06-12 1994-12-22 Semiconductor Energy Lab Co Ltd 半導体装置
US5488000A (en) 1993-06-22 1996-01-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer
US6713330B1 (en) 1993-06-22 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
TW369686B (en) * 1993-07-27 1999-09-11 Semiconductor Energy Lab Corp Semiconductor device and process for fabricating the same
GB9320310D0 (en) * 1993-10-01 1993-11-17 Kodak Ltd Production of carriers for surface plasmon resonance
US6897100B2 (en) 1993-11-05 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
CN100367461C (zh) 1993-11-05 2008-02-06 株式会社半导体能源研究所 一种制造薄膜晶体管和电子器件的方法
US5440167A (en) * 1994-02-23 1995-08-08 Crosspoint Solutions, Inc. Antifuse with double via contact and method of manufacture therefor
DE69510337T2 (de) * 1994-12-22 1999-12-16 Koninklijke Philips Electronics N.V., Eindhoven Halbleiterspeicheranordnungen und herstellungsverfahren
US5663591A (en) * 1995-02-14 1997-09-02 Crosspoint Solutions, Inc. Antifuse with double via, spacer-defined contact
IL112826A (en) * 1995-02-28 1998-09-24 Chip Express Israel Ltd Method for settling a deposited plasma polymer layer
US6255718B1 (en) 1995-02-28 2001-07-03 Chip Express Corporation Laser ablateable material
US6800875B1 (en) 1995-11-17 2004-10-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display device with an organic leveling layer
JPH09146108A (ja) * 1995-11-17 1997-06-06 Semiconductor Energy Lab Co Ltd 液晶表示装置およびその駆動方法
TW439003B (en) * 1995-11-17 2001-06-07 Semiconductor Energy Lab Display device
TW309633B (es) 1995-12-14 1997-07-01 Handotai Energy Kenkyusho Kk
JP3645378B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645379B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645380B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
US5985740A (en) 1996-01-19 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device including reduction of a catalyst
US6478263B1 (en) 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP3729955B2 (ja) 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5888858A (en) 1996-01-20 1999-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US7056381B1 (en) 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
US6180439B1 (en) 1996-01-26 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
US6465287B1 (en) 1996-01-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization
US6100562A (en) 1996-03-17 2000-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
GB2322707B (en) * 1996-06-17 2000-07-12 Mercury Diagnostics Inc Electrochemical test device and related methods
US6133618A (en) * 1997-08-14 2000-10-17 Lucent Technologies Inc. Semiconductor device having an anti-reflective layer and a method of manufacture thereof
US6001239A (en) 1998-09-30 1999-12-14 Mercury Diagnostics, Inc. Membrane based electrochemical test device and related methods
US6475836B1 (en) 1999-03-29 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6468829B2 (en) 2000-05-16 2002-10-22 United Solar Systems Corporation Method for manufacturing high efficiency photovoltaic devices at enhanced depositions rates
US6553729B1 (en) 2000-06-09 2003-04-29 United Solar Systems Corporation Self-adhesive photovoltaic module
US6729081B2 (en) 2000-06-09 2004-05-04 United Solar Systems Corporation Self-adhesive photovoltaic module
AU2002356330A1 (en) * 2001-12-27 2003-07-30 Bookham Technology Plc An in-line waveguide photo detector
EP1347077B1 (en) * 2002-03-15 2006-05-17 VHF Technologies SA Apparatus and method for the production of flexible semiconductor devices
US20040020430A1 (en) * 2002-07-26 2004-02-05 Metal Oxide Technologies, Inc. Method and apparatus for forming a thin film on a tape substrate
US20070231972A1 (en) * 2006-04-03 2007-10-04 Mouttet Blaise L Manufacture of programmable crossbar signal processor
KR20110118183A (ko) * 2006-04-11 2011-10-28 어플라이드 머티어리얼스, 인코포레이티드 솔라 패널 형성을 위한 시스템 아키텍쳐 및 방법
US20070256727A1 (en) * 2006-05-03 2007-11-08 Michael Gumm Elastomeric Waterproofing and Weatherproofing Photovoltaic Finishing Method and System
JP5436017B2 (ja) * 2008-04-25 2014-03-05 株式会社半導体エネルギー研究所 半導体装置
JP5518366B2 (ja) * 2008-05-16 2014-06-11 株式会社半導体エネルギー研究所 薄膜トランジスタ
KR101602252B1 (ko) * 2008-06-27 2016-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터, 반도체장치 및 전자기기
US8017198B2 (en) * 2009-04-24 2011-09-13 Ovshinsky Innovation Llc Thin film deposition via charged particle-depleted plasma achieved by magnetic confinement
US20100325976A1 (en) * 2009-06-25 2010-12-30 Degenfelder Jeffrey G Solar shingle system
KR101196793B1 (ko) * 2010-08-25 2012-11-05 엘지전자 주식회사 태양 전지 및 그 제조 방법
PL224639B1 (pl) * 2014-06-02 2017-01-31 Wrocławskie Centrum Badań Eit + Spółka Z Ograniczoną Kaskadowy konwerter promieniowania jonizującego oraz urządzenie do diagnostyki obrazowej w czasie rzeczywistym

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3949119A (en) * 1972-05-04 1976-04-06 Atomic Energy Of Canada Limited Method of gas doping of vacuum evaporated epitaxial silicon films
DE2508802A1 (de) * 1975-02-28 1976-09-09 Siemens Ag Verfahren zum abscheiden von elementarem silicium
US4066527A (en) * 1975-07-18 1978-01-03 Futaba Denshi Kogyo K. K. Method of producing semiconductor device
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
AU503228B2 (en) * 1975-07-28 1979-08-30 Rca Corp. Semiconductor device
CA1078078A (en) * 1976-03-22 1980-05-20 David E. Carlson Schottky barrier semiconductor device and method of making same
US4047976A (en) * 1976-06-21 1977-09-13 Motorola, Inc. Method for manufacturing a high-speed semiconductor device
US4196438A (en) * 1976-09-29 1980-04-01 Rca Corporation Article and device having an amorphous silicon containing a halogen and method of fabrication
FR2394173A1 (fr) * 1977-06-06 1979-01-05 Thomson Csf Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede
US4113514A (en) * 1978-01-16 1978-09-12 Rca Corporation Method of passivating a semiconductor device by treatment with atomic hydrogen

Also Published As

Publication number Publication date
CA1125896A (en) 1982-06-15
IN151380B (es) 1983-04-02
FR2432765B1 (es) 1984-02-17
EG13885A (en) 1983-09-30
DE2943211A1 (en) 1982-01-28
US4226898A (en) 1980-10-07
ZA791230B (en) 1980-04-30
DE2943211C2 (de) 1984-10-25
WO1979000776A1 (en) 1979-10-18
FR2432765A1 (fr) 1980-02-29
AU523424B2 (en) 1982-07-29
IL56870A (en) 1982-11-30
DE3000905A1 (de) 1981-07-16
IL56870A0 (en) 1979-05-31
MX5024E (es) 1983-02-22
AU4493379A (en) 1979-09-20

Similar Documents

Publication Publication Date Title
ES478454A1 (es) Un metodo de preparacion de una pelicula semiconductora.
US4113531A (en) Process for fabricating polycrystalline inp-cds solar cells
ES478453A1 (es) Un metodo de produccion de una pelicula semiconductora amor-fa.
US4385198A (en) Gallium arsenide-germanium heteroface junction device
JPS5513938A (en) Photoelectronic conversion semiconductor device and its manufacturing method
EP0113434A1 (en) Photovoltaic device
GB2144914A (en) Apparatus for forming thin film heterojunction solar cells from i-iii-vi2 chalcopyrite compounds
FR2302593A1 (fr) Cellule solaire constituee par un empilement de couches de l'une et l'autre conductivite
CN101728458B (zh) 多结太阳电池的制造方法
EP0300798A3 (en) Functional znse:h deposited films
Arora et al. Surface recombination effects on the performance of n+ p step and diffused junction silicon solar cells
JPS57136377A (en) Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element
CN101459206A (zh) 高效多结太阳能电池的制造方法
Omura et al. Recent technical advances in thin-film CdS/CdTe solar cells
US4483063A (en) Oxide charge induced high low junction emitter solar cell
Scafe et al. Indium-doped CdS film on p-type silicon-An efficient heterojunction solar cell
JPS56107588A (en) Semiconductor light emitting element
ES8201769A1 (es) Celula fotovoltaica
JPH0927632A (ja) 光起電力素子及びその製造方法
JPS5670675A (en) Manufacture of photoelectric converter
JPS58168215A (ja) 非晶質半導体
JPS55158680A (en) Solar cell and manufacture thereof
JPS5563885A (en) Photovoltaic device
Adler Amorphous silicon solar cells
CA1077605A (en) Photovoltaic cell of n-cdse and p-snse