IL112826A - Method for depositing a plasma deposited polymer - Google Patents

Method for depositing a plasma deposited polymer

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Publication number
IL112826A
IL112826A IL11282695A IL11282695A IL112826A IL 112826 A IL112826 A IL 112826A IL 11282695 A IL11282695 A IL 11282695A IL 11282695 A IL11282695 A IL 11282695A IL 112826 A IL112826 A IL 112826A
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Israel
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pdp
plasma
integrated circuit
gas
substrate
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IL11282695A
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Hebrew (he)
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IL112826A0 (en
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Chip Express Israel Ltd
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Application filed by Chip Express Israel Ltd filed Critical Chip Express Israel Ltd
Priority to IL11282695A priority Critical patent/IL112826A/en
Publication of IL112826A0 publication Critical patent/IL112826A0/en
Priority to KR1019970706003A priority patent/KR19980702598A/en
Priority to PCT/US1996/002920 priority patent/WO1996027212A1/en
Priority to US08/894,540 priority patent/US6255718B1/en
Priority to EP96908627A priority patent/EP0812477A4/en
Priority to CA002214109A priority patent/CA2214109A1/en
Priority to JP8526446A priority patent/JPH11502060A/en
Publication of IL112826A publication Critical patent/IL112826A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Laser Beam Processing (AREA)

Description

112826/2 i> wo n ¾> no^ia JUDVI» mpnsfc no\y METHOD FOR DEPOSITING A PLASMA DEPOSITED POLYMER CHIP EXPRESS (ISRAEL) LTD.
C:20968 AN IMPROVED LASER ABLATEABLE MATERIAL FIELD OF THE INVENTION The present invention relates to materials which are ablateable by lasers of visual light and more particularly to methods of using such materials in the fabrication and customization of integrated circuits.
BACKGROUND OF THE INVENTION Integrated circuits are usually manufactured in large runs. However it is frequently desirable to make small runs of a specific integrated circuit, typically for prototyping. US Patent 4,924,287, the disclosure of which is incorporated herein by reference, describes a customizable integrated circuit. Methods for customizing of such integrated circuits are shown in US Patent 5,329,152, the disclosure of which is also incorporated herein by reference.
Customizable integrated circuits typically have predetermined portions which are adapted for modification before being supplied to the end user. Such modifications include, inter alia: (a) electrically programing memory locations; (b) cutting conducting links; and (c) creating conducting links.
Customization by cutting of conductor links is preferred since this method does not require extra circuitry on the integrated circuit as do electrically programmable logic devices. Furthermore, pre-produced links can carry a higher current Two methods are mainly used to selectively cut links. One method is to cut each link directly with a laser beam. However, direct cutting with a laser may require high laser energy densities. Application of large amounts of laser energy to integrated circuit surfaces may damage the integrated circuit.
A preferred method of customizing such circuits is to coat them with a layer of laser sensitive ablative material and to ablate the material at selected locations using a relatively small amount of laser radiation. After such ablation, the integrated circuit is etched using an etchant or other etching method that does not remove the ablative material, for example, by chlorine plasma etching. Thus, only areas previously ablated by the laser are etched. Customizable areas typically include metal links so that etching the links modifies the interconnections, and therefore the function, of the integrated circuit .
It is also known to use a photolithographic method wherein the integrated circuit is coated with a layer of radiation sensitive material and exposed to a pattern of ultra violet light, visible light, X-rays or to an electron beam. The coating material is developed and the areas exposed to radiation are removed. The integrated circuit is then etched as described above.
In practice, due to the characteristics required of them, very few materials are useful as laser ablative coatings. An efficient laser ablative material should be capable of absorbing a large portion of the laser energy and in response thereto be transformed direc 1v a d-_Jjime .iA.ta1y to ^gas .^^^J^^JL^SMi?*^-0?1 sometimes causes the material to exjplode. Explosion transforms part of the material to gas, however, some of the material is also blown away as particles. Some of these particles may fall back on the chip and cover-up previously uncovered areas, counteracting the ablation/explosion at these areas. An effective laser ablative material should not form many particles. The term ablatio neans that the material is turned directly to gas, and very few particles are formed.
It is also desirable that the resultant ablation pattern be as close as possible to the irradiation pattern and that only small amounts of energy leak into the surrounding area and into the integrated circuit. Otherwise, the definition of the geometry will be poor and the integrated circuit may be damaged. Additionally, the material should adhere well to substrates and provide good coverage of step geometries used in microelectronic circuits. Since the purpose of the coating is to protect coated areas while etching the uncoated areas, it is important that the material be resistant to at least one method of etching, preferably a metal etching method.
An example of a material which has some but not all of the previous properties is Sulfide has most of the abovementioned propert es, owever, s nce it does not cover uneven surfaces very well it is not as useful^ as other materials.
Laser ablative materials which are ablated by ultra violet shows covering an integrated circuit with a liquid polymer and ablating that polymer with ultra violet light. However, these polymers are transparent to visible light and are not known to be ablateable by visible light lasers.
Very few_ materials are known to be ablateable by visible light. Visible light is preferred to ultra violet light because laser technology supplies more efficient and less expensive lasers in visible light wavelengths.
US Patent 5,329,152 discloses the use of amorphous silicon as a visible light laser ablative coating material. Amorphous silicon is ablated by visible light lasers and is partially resistant to etching by chlorine plasma, which is used to etch metals. Thus, an integrated circuit with exposed metal links can be customized by using amorphous silicon as the ablative material .
One problem with amorphous silicon is its^high vaporization temperature X 2355 eC ),.'- 1000°C over its melting point which increases the tendency to explosion and particle generation.
^Plasma deposj^ted polymers (PDP) which are described in "Plasma Polymerization", by H. Yasuda, Academic Press , Inc. 1985, have properties such as crack-filling, chemical inertness and selective permeability which make them useful for a variety of uses such as surgical prosthetics and semipermeable membranes. US Patents 5,320,875, 5,312,529, 5,283,119 and 5,308,649, the disclosures of which are incorporated herein by reference, disclose methods of manufacturing and uses of PDPs.
First, a substrate is placed in a plasma chamber. The chamber is then filled with a gas, such as methane, at a low pressure, typically on the order of 1 torr.
Plasma is then created in the chamber, typically using a radio frequency (RF) electric field which ionizes the gas. Consequently, a polymer layer is continually deposited on the substrate .
It should be understood that a PDP is not a direct polymer of the gas used in the process. It is believed that the gas breaks down in the plasma and gas precursors and their compounds form the PDP which is then deposited on the substrate (and on the walls of the chamber). The deposition process is a combination of two processes, one in which molecules hit the substrate and cling, and another in which they do not cling, and may even cause some material to be etched off the substrate. The temperature of the substrate dictates the types of molecules which are likely to cling to the substrate and the manner in which they will be attached to the PDP already deposited.
The gas usually flows through the chamber at a rate which determines the types of molecules that form in the plasma and, consequently, the type of PDP deposited. There are many other parameters which may affect the deposited PDP, such as the distance of the substrate from different portions of the plasma and the RF power used to create the plasma.
The gas used is typically an |ojrganic compojand). However, some inert gases, such as argon, may be added in order to speed up the polymers can be created from different starting materials.
SUMMARY OF THE INVENTION The inventors have discovered a method of depositing a Plasma Deposited Polymer (PDP) which is laser-ablative by laser light having a wavelength longer than ultra-violet light, such as visible light.
In a preferred embodiment of the invention, the PDP is deposited in the following manner: (a) providing a plasma vacuum chamber; (b) placing the substrate (typically, a silicon wafer) on the cathode of the chamber; (c) introducing a plasma into the chamber, said plasma generated by applying Radio Frequency (RF) radiation to an active gas, the power density used is between .08 att*cm-^ and 1.59 Watt*cm~2; and (d) terminating the process when the PDP is deposited on the substrate to the desired thickness.
Preferably, an inactive gas such as argo is added to the acti e gas at a ratio between 3:7 and 7:3, preferably, at a ratio between 4:6 and 6:4; most preferably, at a 1:1 ratio. Preferably the gas mixture is introduced through the anode and turned into a plasma in the chamber. Alternative y, the gas is first turned into a plasma and then introduced into the chamber. The inactive gas may be added before or after the active gas is turned into a plasma.
The substrate is preferably maintained at a temperature below 70 eC. A pressure of between 0.1 and 2 torr is maintained, preferably, between 0.5 and 1.5 torr. The inventors have found that a pressure of about 1 torr is most preferred. The active gas used is preferably organic, preferably, a hydro-carbon; typically, ethylene is used. The gas is introduced into the chamber at a flow rate between 1 seem and 50 seem, preferably between 10 and 35 seem and most preferably, about 20 seem. Preferably, Ionization of the gas is achieved with an RF power density between 0.15 Watt*cnT2 and 1 Watt*cm"2; most preferably, the power density is between 0.24 Watt*cm""2 and 0.48 Watt*cm~2. Preferably, the RF radiation is continuous at 13.6MHz. However, other methods of application of RF enegry may be used, such as pulsed RF radiation at a frequency of 400MHz. Preferably the cathode is 8" in diameter. The distance between the cathode and the anode is between 1.5 and 10 cm, preferably 3 cm.
A typical deposition time of approximately 10 minutes will produce a polymer of a typically desired thickness of approximately 1μ.
These parameters can be adjusted to create a polymer having predetermined characteristics. Specifically, a material with low specific heat, low heat conductivity, a small difference between its evaporation temperature and its melting temperature and high light absorption is desirable, and is achieved utilizing the above parameters.
A PDP deposited under the abovementioned conditions has one or more of the following properties; (a) the material is stable enough to act as a passivation layer; (b) when ablated by laser, preferably a visible light laser. the material absorbs enough of the incident laser energy directed at it so that underlying layers are not damaged by laser energy; (c) only areas directly illuminated by laser energy are ablated; (d) the material is ablative, i.e., it vaporizes rather than explodes, so that very little debris is formed on the substrate when the material is ablated; (e) the material is ablated in response to relatively low levels of energy; (f) the material has good filling qualities, so that it can be deposited evenly over non leveled geometries; (g) the material is insulative; (h) the material adheres well to the substrate; (i) the material is resistant to at least some forms of metal etching; (j) the material is ablateable by e-beam; and (k) the material is etchable by some means, which preferably do not etch the structure of the underlying integrated circuit.
Alternately, a PDP having a selected absorption coefficient can be deposited by properly selecting the power density used to generate said plasma .
There is thus provided according to a preferred embodiment of the invention a method of customizing integrated circuits: providing an integrated circuit; depositing a PDP on the integrated circuit; and ablating the PDP at preselected locations using a laser beam, preferably a visible light laser beam.
Preferably, the integrated circuit is then etched, preferably by reactive ion etching, at locations underlying said ablated locations.
There is further provided in accordance with a preferred embodiment of the invention a PDP ablateable by visible light.
Also provided in accordance with a preferred embodiment of the invention is an integrated circuit coated with a PDP ablateable by visible light.
There is further provided in accordance with a preferred embodiment of the invention a PDP deposited according the above described deposition parameters.
BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic of a vapor deposition chamber as used in forming an ablative layer in accordance with a preferred embodiment of the invention; Figs. 2A-2C show an integrated circuit customized in accordance with a preferred embodiment of the invention; and Figs. 3A-3D show an integrated circuit customized in accordance with an alternative preferred embodiment of the invention .
DESCRIPTION OF THE PREFERRED EMBODIMENTS Fig. 1 shows a plasma vacuum chamber 1 suitable for depositing a Plasma Deposited Polymer (PDP) on a substrate, for example, a Plasma-Therm model 790 vacuum qhamber.
A substrate 3, to be coated with a PDP is placed in chamber I, preferably on a cathode 4. The temperature of substrate 3 may be controlled by a heater/cooler 5 such that during deposition the substrate is maintained at a substantially constant temperature. Preferably, the substrate is maintaining at 20°C while the walls of the chamber are heated. A pump 2 reduces the gas pressure in chamber 1, Preferably, the pressure in th chamber during the deposition is approximately 1 torr, however, pressures between 0.1 and 2 torr are useful in carrying out the invention.
A gas is supplied to chamber 1, preferably through a plurality of nozzles 8 formed in an anode 6. The gas is typically a mixture of an active gas, preferably an organic compound such as ethylene or another hydro-carbon and an inactive gas such as argon. Preferably, the ratio between the active gas and the inactive gas is between 7:3 and 3:7, preferably, at a ratio of about lil. The rate at which the gas aiixture is supplied is called the "flow rate" and is preferably between 1 seem and 50 seem, preferably 20 seem.
Since many organic compounds and in particular: ^2Η2' C6H6' 6F6' C2H4' C2F4' Styrene, Cyclohexane, Ethylene oxide, Acrylic acid. Propionic acid, Vinyl acetate, Methyl acrylate, Hexamethyldisilane, Tetramethyldisiloxane, Hexamethyldisiloxane, Divinyltetramethyldisiloxane and many hydrocarbon compounds are known to be interchangeable with ethylene in PDP deposition, a PDP ablateable by visible laser light can be obtained if any of the preceding organic materials are used, with appropriate changes in the deposition parameters, if required.
An RF generator 7, preferably operating at 13.6 MHz, is connected between anode 6 and cathode 4. For a cathode diameter of 8" the power output of RF generator 6 Is typically between 25W and 500W, preferably, between 75W and 150W. Preferably, anode 6 and (the walls of) chamber 1 are grounded and a voltage differential appears between them and cathode 4. The distance between anode 6 and cathode 4 is between 1.5 and 10 cm, preferably, 3 cm.
Alternatively, the active gas is turned into a plasma in a separate compartment within the chamber. The inactive gas may be added to the active gas before or after it is turned into a plasma.
In a chamber configured as described above, a layer of PDP is continuously deposited on substrate 3. Preferably, a layer having a thickness of about 0-6μ is deposited within less than 15 minutes .
It is to be appreciated that some other combinations of values for the above parameters ma also result in a PDP being deposited and in some cases, the resultant PDP may be ablateable by visible laser light.
A PDP deposited according to the abovementioned configuration will be ablateable by visible laser light and will have some or all of the following properties: (a) low thermal conductivity; (b) low evaporation temperature; (c) an absorption coefficient of at least 3*103 cm"1 in the mid-visible range; (d) stability in Chlorine and Fluorine plasmas, generally used to etch metal layers and insulation layers respectively; (e) ablateability at ambient conditions by visible laser radiation (at 532 nm or 527 nm) at pulse energy densities below 4 J/cm2; (£) etchability in an oxygen plasma; (g) capability of filling cracks which are approximately as wide as the layer of PDP; (h) even deposition on the substrate; (i) insulating capability; ( j ) ablation without forming many particles at laser energy above 1 J*cnT2; (k) good conformance between the ablation pattern and the 2096S final+1 laser radiation pattern; (1) good adhesion to the substrate; and (m) stability over a period of more than a year in storage, so that the PDP can be used as a passivation layer.
The inventors have also discovered that a PDP deposited according to a preferred embodiment of the invention has an, evenly monotonicly decreasing absorption coefficient in the .visible light range. Thus, it is easily ablateable by ultraviolet light lasers and also ablateable by laser light in the near infra red.
A preferred use of a PDP having the abovementioned ' properties is in customization of integrated circuits. Figs. 2A - 2C show customization of an integrated circuit in accordance with the present invention. Fig 2A shows an integrated circuit which includes a metal layer 901, separated from a second metal layer 902 by an insulation layer 904. Layer 902 is also covered by a second insulation layer 905. and another metal layer 903 covers layer 90S. The entire top of the integrated circuit is preferably covered with a passivation layer 436. Since customization ' preferably includes disconnecting metal links in layers 902 and/or 903, a plurality of apertures 422 are preferably formed through passivation layer 43S and through any intervening layers down to a metal link 438 that is to be disconnected. US Patent 4,924, 287 to Orbach and ' Chinese Patent No. 073819 issued January 25, 1998 , the disclosures of which are incorporated herein by reference, both describe an integrated circuit preferred for customization. laser radiation pattern; (1) good adhesion to the substrate; and (m) stability over a period of more than a year in storage, so that the PDP can be used as a passivation layer.
The inventors have also discovered that a PDP deposited according to a preferred embodiment of the invention has an evenly monotonicly decreasing absorption coefficient in the visible light range. Thus, it is easily ablateable by ultraviolet light lasers and also ablateable by laser light in the near infra red.
A preferred use of a PDP having the abovementioned properties is in customization of integrated circuits. Figs. 2A - 2C show customization of an integrated circuit in accordance with the present invention. Fig 2A shows an integrated circuit which includes a metal layer 901, separated from a second metal layer • 902 by an insulation layer 904. Layer 902 is also covered by a second insulation layer 905, and another metal layer 903 covers layer 905. The entire top of the integrated circuit is preferably covered with a passivation layer.. 436. Since customization preferably includes disconnecting metal links in layers 902 and/or 903, a plurality of apertures 422 are preferably formed through passivation layer 436 and through any intervening layers down to a metal link 438 that is to be disconnected. US Patent 4,927,287 to Orbach and US Patent No.5,679,967 to Janai and Orbach and assigned to Chip Express Israel Ltd., issued Oct.21, 1997 and titled "A Customizable Logic Array Device", the disclosures of which are incorporated herein by reference, both describe an integrated circuit preferred for customization. 14 A first step of the customization process, as shown in Fig. 2A, includes depositing a layer 900 of PDP over the integrated circuit. Preferably, the layer is 1μ thick. Since PDP layer 900 is preferably stable at ambient room conditions, the coated integrated circuit is preferably manufactured in large runs and stored until needed.
A second step of the customization process, as shown in Fig. 2B, includes ablating PDP layer 900 at selected locations. Preferably these locations are over apertures 422. Preferably, a NdYAG frequency doubled laser at 532nm or Nd YLF at 523nm is used for ablating PDP layer 900. Alternatively an Argon laser at 514nm or at 488nm is used. Preferably, the pulses are approximately 100 nanoseconds long and have an energy density of approximately 4 J/cm2. The ablations can be performed using a laser micromachlning system, preferably, a QS650 available from Chip Express (Israel) LTD.
A third step of the customization process, as shown in Fig. 2C, includes etching the integrated circuit, preferably, using Chlorine plasma.
Preferably, the remaining PDP is removed by Oxygen plasma and a passivation layer is formed over the customized integrated circuit.
Figs. 3A-3D show an alternative preferred customization process similar to the abovedescribed process. In this embodiment, the integrated circuit is first coated with a planarization layer 906, preferably silicon dioxide or other insulating planerizing materials as well known in the art, before 15 the step of depositing PDP layer 900 thereon (Fig. 3A).
Fig. 3B shows the device after layer 900 is ablated at selected locations.
An additional step of etching planarization layer 906, preferably with CF4 plasma is preformed (Fig. 3C) before etching the integrated circuit itself (Fig. 3D).
The abovedescrxbed customization processes can be carried out on most kinds of integrated circuits, including CMOS devices, gate arrays, multi-chip packages and memory chips.
Additionally, the inventors have found that the ablation pattern of the PDP is very similar to the irradiation pattern used, so that very precise micromachining of the PDP is possible. The depth of the cut is controlled with a precision of 0.3μ or better. The radius of curvature at the corners of rectangular cuts is 0.2μ or less, even though a wavelength of .532μ was used. This is attributed to the threshold nature of the ablation process and to the properties of imaging with laser coherent light.
The inventors have found that the PDP is more versatile than using standard photo-resists because it does not need to be developed and washed away. Furthermore, the inventors has discovered that the optical properties of the DP, in particula absorption, can be controlled by changing the F power used to ionized the gas, therefore, a PDP layer with the correct absorption can be produced for any chosen laser wavelength and any desirable film thickness. Additionally, the etch resistance properties of the PDP are similar to those of standard photo- 16 . na + resists.
It will be appreciated by persons skilled in the art that the present invention is not limited to what has been thus far described. Rather, the scope of the present invention is limited only by the following claims: 17 112826/2

Claims (26)

1. A method of depositing a Plasma Deposited Polymer (PDP) which is ablateable by visible light radiation on a substrate, comprising: placing a substrate on a cathode of a plasma vacuum chamber; providing a gas plasma in said chamber by activating a gas comprising an organic gas to form said gas plasma by a radio frequency electric field having a power density of between .08 -2 and 1.59 Watt*cm ; and allowing said gas plasma to deposit on said substrate.
2. A method according to claim 1, wherein said power density is -2 between .15 and 1 Watt*cm
3. A method according to claim 1, wherein said power density is -2 between .24 and .48 Watt*cm
4. A method according to claim 3, wherein said organic gas is a hydrocarbon compound.
5. A method according to claim 3, wherein said gas comprises at least 30% inactive gas. 18 112826/2
6. A method according to claim 3, wherein said organic gas comprises ethylene.
7. A method according to claim 1, further comprising maintaining a chamber pressure between .1 and 2.0 torr.
8. A method according to claim 1, wherein said plasma has a flow rate between 1 and 50 seem.
9. A method according to claim 1, wherein said plasma has a flow rate between 15 and 25 seem.
10. A method according to any of claims 1 - 9 and also comprising ablating said substrate at preselected locations using a laser beam.
11. A method according to claim 10, wherein said laser beam is a visible light laser beam.
12. A method according to claim 11, further comprising etching said substrate at the ablated locations.
13. A method according to claim 1, wherein said gas plasma is created from a mixture of an organic compound and at least 30% argon. 19 112826/2
14. A PDP produced by the method of claim 1.
15. A PDP produced by the method of claim 4.
16. A PDP produced by the method of claim 6.
17. A PDP produced by the method of claim 8.
18. A plasma deposited polymer (PDP) according to any of claims 14 - 17 which is ablateable by visible laser radiation.
19. A PDP according to claim 18, which is ablateable by a laser 2 energy density lower than 4 J/cm .
20. An integrated circuit coated with a layer of PDP produced by the method of claim 1.
21. An integrated circuit coated with a layer of PDP produced by the method of claim 4.
22. An integrated circuit coated with a layer of PDP produced by the method of claim 6.
23. An integrated circuit coated with a layer of PDP produced by the method of claim 8. 20 112826/2
24. An Integrated circuit according to any of claims 20 - 23, wherein said PDP is ablateable by a laser energy density lower 2 than 4 J/cm .
25. An integrated circuit according to claim 24, wherein said PDP is partially resistant to metal etching.
26. An integrated circuit according to claim 24, wherein said PDP is partially resistant to oxide etching. For the Applicant, Sanford T. Colb 21
IL11282695A 1995-02-28 1995-02-28 Method for depositing a plasma deposited polymer IL112826A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
IL11282695A IL112826A (en) 1995-02-28 1995-02-28 Method for depositing a plasma deposited polymer
KR1019970706003A KR19980702598A (en) 1995-02-28 1996-02-27 Improved material removable by laser
PCT/US1996/002920 WO1996027212A1 (en) 1995-02-28 1996-02-27 An improved laser ablateable material
US08/894,540 US6255718B1 (en) 1995-02-28 1996-02-27 Laser ablateable material
EP96908627A EP0812477A4 (en) 1995-02-28 1996-02-27 An improved laser ablateable material
CA002214109A CA2214109A1 (en) 1995-02-28 1996-02-27 An improved laser ablateable material
JP8526446A JPH11502060A (en) 1995-02-28 1996-02-27 Improved laser ablation material

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IL11282695A IL112826A (en) 1995-02-28 1995-02-28 Method for depositing a plasma deposited polymer

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IL112826A0 IL112826A0 (en) 1995-05-26
IL112826A true IL112826A (en) 1998-09-24

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JP (1) JPH11502060A (en)
KR (1) KR19980702598A (en)
CA (1) CA2214109A1 (en)
IL (1) IL112826A (en)
WO (1) WO1996027212A1 (en)

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