IL112826A0 - An improved laser ablatable material - Google Patents

An improved laser ablatable material

Info

Publication number
IL112826A0
IL112826A0 IL11282695A IL11282695A IL112826A0 IL 112826 A0 IL112826 A0 IL 112826A0 IL 11282695 A IL11282695 A IL 11282695A IL 11282695 A IL11282695 A IL 11282695A IL 112826 A0 IL112826 A0 IL 112826A0
Authority
IL
Israel
Prior art keywords
improved laser
laser ablatable
ablatable material
improved
laser
Prior art date
Application number
IL11282695A
Other versions
IL112826A (en
Original Assignee
Chip Express Israel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chip Express Israel Ltd filed Critical Chip Express Israel Ltd
Priority to IL11282695A priority Critical patent/IL112826A/en
Publication of IL112826A0 publication Critical patent/IL112826A0/en
Priority to EP96908627A priority patent/EP0812477A4/en
Priority to CA002214109A priority patent/CA2214109A1/en
Priority to PCT/US1996/002920 priority patent/WO1996027212A1/en
Priority to JP8526446A priority patent/JPH11502060A/en
Priority to KR1019970706003A priority patent/KR19980702598A/en
Priority to US08/894,540 priority patent/US6255718B1/en
Publication of IL112826A publication Critical patent/IL112826A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Laser Beam Processing (AREA)
IL11282695A 1995-02-28 1995-02-28 Method for depositing a plasma deposited polymer IL112826A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
IL11282695A IL112826A (en) 1995-02-28 1995-02-28 Method for depositing a plasma deposited polymer
EP96908627A EP0812477A4 (en) 1995-02-28 1996-02-27 An improved laser ablateable material
CA002214109A CA2214109A1 (en) 1995-02-28 1996-02-27 An improved laser ablateable material
PCT/US1996/002920 WO1996027212A1 (en) 1995-02-28 1996-02-27 An improved laser ablateable material
JP8526446A JPH11502060A (en) 1995-02-28 1996-02-27 Improved laser ablation material
KR1019970706003A KR19980702598A (en) 1995-02-28 1996-02-27 Improved material removable by laser
US08/894,540 US6255718B1 (en) 1995-02-28 1996-02-27 Laser ablateable material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IL11282695A IL112826A (en) 1995-02-28 1995-02-28 Method for depositing a plasma deposited polymer

Publications (2)

Publication Number Publication Date
IL112826A0 true IL112826A0 (en) 1995-05-26
IL112826A IL112826A (en) 1998-09-24

Family

ID=11067145

Family Applications (1)

Application Number Title Priority Date Filing Date
IL11282695A IL112826A (en) 1995-02-28 1995-02-28 Method for depositing a plasma deposited polymer

Country Status (6)

Country Link
EP (1) EP0812477A4 (en)
JP (1) JPH11502060A (en)
KR (1) KR19980702598A (en)
CA (1) CA2214109A1 (en)
IL (1) IL112826A (en)
WO (1) WO1996027212A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8268675B2 (en) * 2011-02-11 2012-09-18 Nordson Corporation Passivation layer for semiconductor device packaging
US10490402B2 (en) 2013-09-04 2019-11-26 Tokyo Electron Limited UV-assisted stripping of hardened photoresist to create chemical templates for directed self-assembly
US9793137B2 (en) 2013-10-20 2017-10-17 Tokyo Electron Limited Use of grapho-epitaxial directed self-assembly applications to precisely cut logic lines
US9349604B2 (en) 2013-10-20 2016-05-24 Tokyo Electron Limited Use of topography to direct assembly of block copolymers in grapho-epitaxial applications
GB2529620A (en) 2014-08-18 2016-03-02 Flexenable Ltd Patterning layer stacks for electronic devices
US9947597B2 (en) 2016-03-31 2018-04-17 Tokyo Electron Limited Defectivity metrology during DSA patterning
WO2018013976A1 (en) 2016-07-15 2018-01-18 Brewer Science Inc. Laser ablative dielectric material

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4177474A (en) * 1977-05-18 1979-12-04 Energy Conversion Devices, Inc. High temperature amorphous semiconductor member and method of making the same
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
DE3173581D1 (en) * 1980-10-28 1986-03-06 Toshiba Kk Masking process for semiconductor devices using a polymer film
US4374179A (en) * 1980-12-18 1983-02-15 Honeywell Inc. Plasma polymerized ethane for interlayer dielectric
JPS5893241A (en) * 1981-11-30 1983-06-02 Sony Corp Semiconductor device
US4517223A (en) * 1982-09-24 1985-05-14 Sovonics Solar Systems Method of making amorphous semiconductor alloys and devices using microwave energy
ATE80955T1 (en) * 1984-06-20 1992-10-15 Gould Inc LASER PROCESS FOR PHOTOMASK REPAIR.
US5329152A (en) * 1986-11-26 1994-07-12 Quick Technologies Ltd. Ablative etch resistant coating for laser personalization of integrated circuits
WO1989007285A1 (en) * 1988-01-29 1989-08-10 Massachusetts Institute Of Technology Integrated circuit micro-fabrication using dry lithographic processes
US5310624A (en) * 1988-01-29 1994-05-10 Massachusetts Institute Of Technology Integrated circuit micro-fabrication using dry lithographic processes
US5470661A (en) * 1993-01-07 1995-11-28 International Business Machines Corporation Diamond-like carbon films from a hydrocarbon helium plasma
US5302547A (en) * 1993-02-08 1994-04-12 General Electric Company Systems for patterning dielectrics by laser ablation
WO1995006900A1 (en) * 1993-09-03 1995-03-09 Hitachi, Ltd. Method and apparatus for pattern formation

Also Published As

Publication number Publication date
IL112826A (en) 1998-09-24
EP0812477A1 (en) 1997-12-17
KR19980702598A (en) 1998-08-05
JPH11502060A (en) 1999-02-16
CA2214109A1 (en) 1996-09-06
EP0812477A4 (en) 1998-10-07
WO1996027212A1 (en) 1996-09-06

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Legal Events

Date Code Title Description
FF Patent granted
KB Patent renewed
KB Patent renewed
MM9K Patent not in force due to non-payment of renewal fees