WO2010026343A1 - Procede de preparation d'une couche mince auto-supportee de silicium cristallise - Google Patents
Procede de preparation d'une couche mince auto-supportee de silicium cristallise Download PDFInfo
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- WO2010026343A1 WO2010026343A1 PCT/FR2009/051667 FR2009051667W WO2010026343A1 WO 2010026343 A1 WO2010026343 A1 WO 2010026343A1 FR 2009051667 W FR2009051667 W FR 2009051667W WO 2010026343 A1 WO2010026343 A1 WO 2010026343A1
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- silicon
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 94
- 239000010703 silicon Substances 0.000 title claims abstract description 94
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 92
- 238000000034 method Methods 0.000 title claims abstract description 60
- 239000010409 thin film Substances 0.000 title abstract description 5
- 239000010410 layer Substances 0.000 claims description 89
- 239000000758 substrate Substances 0.000 claims description 57
- 239000000463 material Substances 0.000 claims description 19
- 238000001816 cooling Methods 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 16
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 8
- 238000002425 crystallisation Methods 0.000 claims description 5
- 230000008025 crystallization Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000002344 surface layer Substances 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 4
- 230000002269 spontaneous effect Effects 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 25
- 229910010271 silicon carbide Inorganic materials 0.000 description 25
- 239000007788 liquid Substances 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 15
- 239000010408 film Substances 0.000 description 14
- 238000001953 recrystallisation Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 230000012010 growth Effects 0.000 description 6
- 239000007791 liquid phase Substances 0.000 description 6
- 238000009736 wetting Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 5
- 238000007711 solidification Methods 0.000 description 5
- 230000008023 solidification Effects 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 150000001721 carbon Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000010076 replication Effects 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004857 zone melting Methods 0.000 description 2
- XWROUVVQGRRRMF-UHFFFAOYSA-N F.O[N+]([O-])=O Chemical compound F.O[N+]([O-])=O XWROUVVQGRRRMF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001485 argon Chemical class 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000035784 germination Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02444—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02447—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the invention relates to a recrystallization process making it possible to obtain self-supported silicon ribbons having a so-called coarse grain crystallographic structure, these ribbons being particularly advantageous for the production of photovoltaic cells.
- Photovoltaic cells are essentially made from mono- or poly-crystalline silicon.
- This silicon is generally obtained by solidifying silicon ingots from a liquid silicon bath. The ingot is then cut into platelets which are used for the manufacture of the cells.
- ESG Edge-defmed Film-fed Growth
- RAD Ribbon against Drop
- RGS Carbon Growth on Substrate
- the liquid silicon rises in a capillary duct and comes into contact with a seed that is then displaced vertically.
- This technique makes it possible to produce large octagonal tubes, with faces 125 mm wide (and 300 ⁇ m thick) in which the wafers are then cut.
- a flexible graphite sheet vertically passes through the liquid silicon bath and silicon-coated spring on both sides.
- the thickness of the ribbons depends on the speed of pulling.
- a moving cold substrate contacts a liquid bath and exits by driving a silicon film on one of its faces.
- the solidification is initiated from the substrate (solid / liquid front parallel to the ribbon plane) and generates a non-optimal small grain structure for photovoltaic application.
- These methods generally allow access to a thickness of silicon ranging from 100 to 500 microns.
- this liquid phase technology there is a technology based on a vapor deposition illustrated by the CVD (4) and PVD (5) techniques.
- the layers thus deposited are generally much thinner (maximum 20 ⁇ m) than those obtained with the liquid phase processes.
- This so-called vapor phase technology makes it possible to work at high deposition rates and thus to ensure satisfactory productivity.
- the crystallographic structure thus obtained does not allow high energy conversion efficiencies because of its small size of crystals.
- a particularly advantageous method for annealing films is that of zone melting, consisting in forming, within the material under consideration, a liquid bridge locally between two solid phases in a high temperature zone, and moving the material thus produced consecutively towards a zone. cold.
- zone melting consisting in forming, within the material under consideration, a liquid bridge locally between two solid phases in a high temperature zone, and moving the material thus produced consecutively towards a zone. cold.
- the technique is known since the 1950s for the growth of massive single crystals, especially silicon. It has recently been adapted to the crystallization of silicon thin films for photo voltaic applications (4).
- zone melting annealing is carried out to recrystallize a layer of a few micrometers thick to serve as an epitaxial substrate for the production of thin layer cells with methods based on vacuum deposit.
- the solidification processes of the liquid silicon film and the separation of the solid silicon film thus formed are closely related, by the choice of the temperature chosen for the substrate. .
- the thickness of the SiC layer formed at the Si / substrate interface is determined by the temperature of the substrate. It is known that a low substrate temperature limits, on the one hand, the diffusion of impurities and, on the other hand, the formation of the SiC layer, thus promoting detachment. Unfortunately, this low temperature induces at the same time a microstructure for solidification of fine-grained silicon that is unsuitable for photovoltaic applications. In addition, the advantages and disadvantages are reversed for high substrate temperatures.
- the technologies currently available do not make it possible to access, in a simple and rapid manner, silicon films which are on the one hand self-supported, that is to say without a support substrate, and on the other hand, with a coarse grain crystallographic structure, that is to say with a size greater than at least 1 mm.
- the present invention aims precisely to provide a method that satisfies the aforementioned requirements.
- the present invention aims at providing a simplified and low-cost method useful for accessing thin layers of silicon, in particular self-supported silicon ribbons or wafers.
- the present invention further aims to provide a method for direct access to thin layers of self-supported silicon and having a coarse grain crystallographic structure.
- Another object of the present invention is to propose a method for manufacturing thin or self-supported silicon layer (s) enabling the simultaneous large-grain silicon recrystallization and the detachment of said thin silicon layer. thus formed, of its original substrate.
- the present invention relates to a method for preparing a self-supported thin layer of crystallized silicon, said method comprising at least the steps of:
- step (3) solidifying by cooling said molten silicon zone in step (2), and (4) recovering the expected thin silicon layer by spontaneous separation of the SiC layer from said substrate layer.
- the solidification step (3) is advantageously carried out under conditions conducive to the formation of silicon crystals, greater than 1 mm in size.
- steps (2), (3) and (4) can be carried out continuously.
- the method further comprises a step (5) comprising the elimination of the SiC layer, contiguous to the expected thin silicon layer.
- the face of the substrate contiguous with the sacrificial layer may be provided with a relief. The method according to the invention then allows the replication of this relief at the level of the thin silicon layer formed and thus to develop a thin layer of textured silicon.
- the solidification or crystallization carried out in step (3) can be initiated by germination, that is to say by bringing the molten zone into contact with at least one external silicon crystal.
- the two expected qualities namely obtaining a silicon layer having a coarse grain crystallographic structure and easy separation of said silicon layer from its original substrate , are not acquired to the detriment of one another.
- the invention relates to the use of the method as described above for preparing self-supported silicon ribbons whose crystallographic structure has a grain size greater than 1 mm.
- the subject of the present invention is also the silicon ribbons obtained according to this process, in particular self-supported, whose crystallographic structure has a grain size greater than 1 mm.
- the term "self-supported” means that the coarse-grained silicon layer formed according to the claimed method is not secured by adherence to a solid substrate.
- Material plate a) carbon-based layer In order not to pollute the silicon, the carbon is chosen as pure as possible and therefore advantageously has a purity greater than 99%, or even 99.9%.
- this carbon layer may vary from 10 nm to 2 ⁇ m, preferably from 20 nm to 200 nm. This layer must be sealed to silicon and must therefore be free from open porosity, to prevent the infiltration of liquid silicon.
- This carbon layer can be made according to conventional techniques within the skill of those skilled in the art.
- this carbonaceous layer may be formed on the surface of one side of the substrate by pyrolysis of a gaseous or liquid precursor or deposited by a liquid route with evaporation of the solvent.
- the carbonaceous layer at the interface of the substrate layer and the silicon layer to be recrystallized, is intended to be totally converted by contact with the liquid silicon, into a SiC layer whose present invention aims precisely to profit in several ways. Firstly, this SiC layer, by blocking the diffusion of the metal elements, if any present in the substrate layer, chemically protects the liquid silicon layer.
- the Si / SiC interface being energetically strong, it thus ensures a good wetting of SiC by the liquid Si and thus the morphological stability of the liquid silicon film.
- the good wetting of this SiC layer by the silicon is also conducive to the replication of a possible texture of the substrate, which is advantageous for the trapping of light in the cells and makes it possible to avoid the implementation of a additional step of etching on the solidified tape, to create the relief.
- thermomechanical stresses produced during cooling cause spontaneous detachment by adhesive failure, that is to say without cracking or deformation of the silicon and / or the substrate. .
- substrate With respect to the material forming the substrate, it can be of various natures.
- the substrate materials that are more particularly suitable for the invention are of the ceramic type, for example alumina or silicon nitride, and more particularly the poor heat-conducting materials such as alumina.
- This substrate material is advantageously in the form of a wafer or a ribbon, and in particular a ribbon with a width varying from 5 to 20 cm, and a thickness ranging from 500 ⁇ m to 10 mm, preferably from 1 to mm to 5 mm.
- the silicon layer it generally has a so-called low grain crystallographic structure that is precisely sought to increase via the method according to the invention.
- This so-called low grain crystallography generally has a size less than 100 microns, especially less than 10 microns.
- This silicon layer can be formed by any conventional method. It can in particular be formed by CVD, PVD or powder deposition, or even the RGS technique, on the surface of the carbonaceous layer.
- Its thickness can vary from 10 ⁇ m to 500 ⁇ m, in particular from 100 ⁇ m to 200 ⁇ m.
- FIG. 1 represents a schematic cross section of a wafer of material to be treated according to the invention
- FIG. 2 is a cross-sectional schematic section of a wafer obtained during step (2)
- FIG. 3 illustrates the step of detaching the thin Si / SiC layer from the substrate layer
- FIG. 4 is a schematic transverse section of a thin layer of silicon / SiC obtained according to the method of the invention.
- FIG. 5 represents the thin layer of silicon obtained after removal of the SiC layer
- FIG. 6 illustrates the longitudinal displacement of a wafer during its treatment according to the invention within a thermal enclosure and the recovery at the end of this enclosure of a thin Si / SiC layer by spontaneous detachment of the SiC layer of the substrate layer.
- step (2) at least one zone of the surface layer of a wafer of material to be recrystallized, in particular as defined above, is carried locally at a temperature above the melting temperature of silicon, that is to say a temperature greater than 1410 ° C.
- This temperature is, moreover, advantageously less than 1700 ° C., especially less than 1550 ° C., or even less than 1500 ° C.
- the size of the melted zone may vary from 5 mm to 5 cm, and in particular from 5 mm to 2 cm.
- this step (2) makes it possible, on the one hand, to melt the silicon of the zone exposed to local heating, and on the other hand, to transform the carbon, contiguous to this zone, into silicon carbide SiC.
- the area thus treated is then exposed to conditions conducive to recrystallization at a grain size greater than 1 mm.
- This cooling of the melted zone can be gradual with a cooling rate of 10 ° C. to 1000 ° C./hour, advantageously of 50 ° C. to 300 ° C./hour.
- this cooling which is favorable for the recrystallization of the molten silicon is carried out under conditions such that the heat exchanges in the thickness of the melted zone formed by the Si / SiC / substrate materials are significantly reduced.
- the heating means are advantageously located on either side of the wafer.
- a temperature gradient is beneficially substantially in the longitudinal direction at the substrate layer rather than in the thickness direction.
- the substrate can be advantageously exposed for cooling, that is to say during the cooling step (3), or even in step (2), at a temperature having a temperature delta with the crystallization temperature between 0 and 20 ° C.
- steps (2), (3) and (4) can be carried out continuously.
- steps (2) and (3) can be carried out in a heating chamber into which said wafer to be treated according to the invention is introduced.
- This chamber is able precisely to provide, on the one hand, the local heating required for step (2) and, on the other hand, the thermal energy necessary for heating the substrate, preferably with a temperature gradient exerted essentially in the longitudinal direction of the substrate and which is particularly advantageous for accessing the expected recrystallization size of the silicon according to the invention.
- substrates which are poor conductors of heat for example alumina.
- the material wafer and said enclosure are advantageously animated with a movement relative to each other so that any melt zone in step (2) is moved consecutively towards the zone of the enclosure, conducive to its recrystallization by cooling.
- the plate that is moved through the enclosure.
- step (2) it is advantageously adjusted within the enclosure to apply only to an area of said wafer material to be treated.
- This local heat treatment can be achieved by any conventional means conducive to localized heating.
- the modes induction heating are particularly suitable for the invention.
- heat treatments of the resistive type, infrared, laser, mirror oven ... can also be considered or any combination of these treatments.
- cooling it may be advantageous to proceed at the beginning of this cooling to bring the molten zone into contact with a silicon crystal seed, in particular by contact of this melted zone with a monocrystalline plate.
- This recrystallization technique is clearly within the skill of those skilled in the art.
- the Si / SiC bilayer wafer spontaneously separates from the substrate layer, that is to say without it being necessary to apply a mechanical stress to proceed with its detachment.
- a recrystallized silicon layer devoid of solid substrate is thus obtained. It is however coated on one of its faces with a silicon carbide layer of generally submicron thickness.
- This silicon carbide layer can be removed consecutively according to usual techniques and generally by a chemical treatment.
- the set is positioned on a conveyor belt passing through a high temperature enclosure.
- the substrate is heated by induction in its lower part, an IR lamp heater also being implemented in the upper part to provide additional heating.
- a maximum temperature of 1500 ° C. is thus reached on the sample (measurement by pyrometer), which leads to forming a zone of liquid silicon of centimeter dimension.
- the draw is initiated by setting the treadmill in motion at a speed of the order of 50 ⁇ m / s.
- the ribbon is detached from the ceramic substrate. After returning to ambient temperature, the sub-micron SiC layer adhering to silicon is removed chemically (nitric acid-hydrofluoric acid mixture).
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
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Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020117007357A KR101287525B1 (ko) | 2008-09-05 | 2009-09-03 | 자가-지지형 결정화 실리콘 박막의 제조 방법 |
EP09741364A EP2319072A1 (fr) | 2008-09-05 | 2009-09-03 | Procede de preparation d'une couche mince auto-supportee de silicium cristallise |
BRPI0919145A BRPI0919145A2 (pt) | 2008-09-05 | 2009-09-03 | processo de preparação de uma camada fina auto-suportada de silício cristalizado, utilização do processo e fita de silício auto-suportada |
JP2011525598A JP5492209B2 (ja) | 2008-09-05 | 2009-09-03 | 自立式結晶化シリコン薄膜の製造方法 |
CN2009801349587A CN102144283B (zh) | 2008-09-05 | 2009-09-03 | 制备自支撑式晶化硅薄膜的方法及其所获得的产品 |
US13/062,462 US20110212630A1 (en) | 2008-09-05 | 2009-09-03 | Method for preparing a self-supporting crystallized silicon thin film |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0855969A FR2935838B1 (fr) | 2008-09-05 | 2008-09-05 | Procede de preparation d'une couche mince auto-supportee de silicium cristallise |
FR0855969 | 2008-09-05 |
Publications (1)
Publication Number | Publication Date |
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WO2010026343A1 true WO2010026343A1 (fr) | 2010-03-11 |
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PCT/FR2009/051667 WO2010026343A1 (fr) | 2008-09-05 | 2009-09-03 | Procede de preparation d'une couche mince auto-supportee de silicium cristallise |
Country Status (9)
Country | Link |
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US (1) | US20110212630A1 (fr) |
EP (1) | EP2319072A1 (fr) |
JP (1) | JP5492209B2 (fr) |
KR (1) | KR101287525B1 (fr) |
CN (1) | CN102144283B (fr) |
BR (1) | BRPI0919145A2 (fr) |
FR (1) | FR2935838B1 (fr) |
RU (1) | RU2460167C1 (fr) |
WO (1) | WO2010026343A1 (fr) |
Families Citing this family (3)
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US9190322B2 (en) * | 2014-01-24 | 2015-11-17 | Infineon Technologies Ag | Method for producing a copper layer on a semiconductor body using a printing process |
CN104555902B (zh) * | 2015-01-05 | 2016-07-06 | 中国科学院物理研究所 | 自支撑介质薄膜及其制备方法 |
RU2767034C2 (ru) * | 2020-07-29 | 2022-03-16 | Акционерное общество "Омский научно-исследовательский институт приборостроения" (АО "ОНИИП") | Способ получения самоподдерживающихся тонких пленок |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2455362A1 (fr) * | 1979-04-23 | 1980-11-21 | Labo Electronique Physique | Procede de realisation de cellules solaires, a base de silicium polycristallin depose sur du carbone, et cellules solaires ainsi obtenues |
US4370288A (en) * | 1980-11-18 | 1983-01-25 | Motorola, Inc. | Process for forming self-supporting semiconductor film |
US4705659A (en) * | 1985-04-01 | 1987-11-10 | Motorola, Inc. | Carbon film oxidation for free-standing film formation |
EP0381051A1 (fr) * | 1989-01-27 | 1990-08-08 | HELIOTRONIC Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH | Croissance de films, en particulier semi-conducteurs, à partir de la phase fondue à l'aide d'un substrat à surface profilée |
US5186785A (en) * | 1991-04-05 | 1993-02-16 | The United States Of America As Represented By The Secretary Of The Air Force | Zone melted recrystallized silicon on diamond |
EP0901158A1 (fr) * | 1997-08-25 | 1999-03-10 | Gec Alsthom Transport Sa | Circuit intégré de puissance, procédé de fabrication d'un tel circuit et convertisseur incluant un tel circuit |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2638270C2 (de) * | 1976-08-25 | 1983-01-27 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung großflächiger, freitragender Platten aus Silicium |
DE2638269C2 (de) * | 1976-08-25 | 1983-05-26 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung von substratgebundenem, großflächigem Silicium |
US4137355A (en) * | 1976-12-09 | 1979-01-30 | Honeywell Inc. | Ceramic coated with molten silicon |
US4248645A (en) * | 1978-09-05 | 1981-02-03 | Mobil Tyco Solar Energy Corporation | Method for reducing residual stresses in crystals |
US4419178A (en) * | 1981-06-19 | 1983-12-06 | Rode Daniel L | Continuous ribbon epitaxy |
RU2040589C1 (ru) * | 1990-03-27 | 1995-07-25 | Институт ядерных исследований АН Украины | Способ получения тонких самоподдерживающихся пленок |
JPH06208961A (ja) * | 1992-10-27 | 1994-07-26 | Tonen Corp | シリコン積層体の製造方法 |
JPH07187642A (ja) * | 1993-12-27 | 1995-07-25 | Tonen Corp | シリコン積層体の製造方法 |
JP2002263981A (ja) * | 2001-03-14 | 2002-09-17 | Murata Mach Ltd | 板材吸着持ち上げ装置の吸着制御装置 |
JP4807914B2 (ja) * | 2001-09-26 | 2011-11-02 | シャープ株式会社 | シリコンシートとそれを含む太陽電池 |
JP2004296598A (ja) * | 2003-03-26 | 2004-10-21 | Canon Inc | 太陽電池 |
US7064037B2 (en) * | 2004-01-12 | 2006-06-20 | Chartered Semiconductor Manufacturing Ltd. | Silicon-germanium virtual substrate and method of fabricating the same |
FR2868598B1 (fr) * | 2004-04-05 | 2006-06-09 | Solarforce Soc Par Actions Sim | Procede de fabrication de plaques de silicium polycristallin |
FR2879821B1 (fr) * | 2004-12-21 | 2007-06-08 | Solaforce Soc Par Actions Simp | Procede de fabrication de cellules photovoltaiques |
-
2008
- 2008-09-05 FR FR0855969A patent/FR2935838B1/fr not_active Expired - Fee Related
-
2009
- 2009-09-03 KR KR1020117007357A patent/KR101287525B1/ko not_active IP Right Cessation
- 2009-09-03 JP JP2011525598A patent/JP5492209B2/ja not_active Expired - Fee Related
- 2009-09-03 RU RU2011107879/28A patent/RU2460167C1/ru not_active IP Right Cessation
- 2009-09-03 WO PCT/FR2009/051667 patent/WO2010026343A1/fr active Application Filing
- 2009-09-03 CN CN2009801349587A patent/CN102144283B/zh not_active Expired - Fee Related
- 2009-09-03 EP EP09741364A patent/EP2319072A1/fr not_active Withdrawn
- 2009-09-03 BR BRPI0919145A patent/BRPI0919145A2/pt not_active IP Right Cessation
- 2009-09-03 US US13/062,462 patent/US20110212630A1/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2455362A1 (fr) * | 1979-04-23 | 1980-11-21 | Labo Electronique Physique | Procede de realisation de cellules solaires, a base de silicium polycristallin depose sur du carbone, et cellules solaires ainsi obtenues |
US4370288A (en) * | 1980-11-18 | 1983-01-25 | Motorola, Inc. | Process for forming self-supporting semiconductor film |
US4705659A (en) * | 1985-04-01 | 1987-11-10 | Motorola, Inc. | Carbon film oxidation for free-standing film formation |
EP0381051A1 (fr) * | 1989-01-27 | 1990-08-08 | HELIOTRONIC Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH | Croissance de films, en particulier semi-conducteurs, à partir de la phase fondue à l'aide d'un substrat à surface profilée |
US5186785A (en) * | 1991-04-05 | 1993-02-16 | The United States Of America As Represented By The Secretary Of The Air Force | Zone melted recrystallized silicon on diamond |
EP0901158A1 (fr) * | 1997-08-25 | 1999-03-10 | Gec Alsthom Transport Sa | Circuit intégré de puissance, procédé de fabrication d'un tel circuit et convertisseur incluant un tel circuit |
Non-Patent Citations (2)
Title |
---|
HAUTTMANN S ET AL: "SiC formation and influence on the morphology of polycrystalline silicon thin films on graphite substrates produced by zone melting recrystallization", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 326, no. 1-2, 4 August 1998 (1998-08-04), pages 175 - 179, XP004141480, ISSN: 0040-6090 * |
REBER, KIEBILA, BAU: "Crystalline Silicon Thin Film Solar Cells on Foreign Substrates by High Temperature Deposition and Recrystallization", THIN FILM SOLAR CELLS: FABRICATION, CHARACTERIZATION AND APPLICATIONS, JOHN WILEY & SONS, LTD, 2006, pages 39 - 95, XP009114689, ISBN: 978-0-470-09126-5, [retrieved on 20060915] * |
Also Published As
Publication number | Publication date |
---|---|
CN102144283A (zh) | 2011-08-03 |
US20110212630A1 (en) | 2011-09-01 |
FR2935838A1 (fr) | 2010-03-12 |
FR2935838B1 (fr) | 2012-11-23 |
JP5492209B2 (ja) | 2014-05-14 |
BRPI0919145A2 (pt) | 2015-12-08 |
KR101287525B1 (ko) | 2013-07-19 |
RU2460167C1 (ru) | 2012-08-27 |
JP2012502457A (ja) | 2012-01-26 |
EP2319072A1 (fr) | 2011-05-11 |
KR20110053378A (ko) | 2011-05-20 |
CN102144283B (zh) | 2013-10-30 |
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