EP2898123A1 - Procede de formation d'une couche de silicium epitaxiee - Google Patents
Procede de formation d'une couche de silicium epitaxieeInfo
- Publication number
- EP2898123A1 EP2898123A1 EP13798753.3A EP13798753A EP2898123A1 EP 2898123 A1 EP2898123 A1 EP 2898123A1 EP 13798753 A EP13798753 A EP 13798753A EP 2898123 A1 EP2898123 A1 EP 2898123A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- substrate
- silicon
- equal
- plasma
- ppm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 102
- 239000010703 silicon Substances 0.000 title claims abstract description 102
- 238000000034 method Methods 0.000 title claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 116
- 239000012535 impurity Substances 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 230000001939 inductive effect Effects 0.000 claims abstract description 12
- 239000012686 silicon precursor Substances 0.000 claims abstract description 12
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 4
- 230000008093 supporting effect Effects 0.000 claims abstract description 3
- 230000008569 process Effects 0.000 claims description 30
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 17
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 229910052698 phosphorus Inorganic materials 0.000 claims description 10
- 239000011574 phosphorus Substances 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 229910000077 silane Inorganic materials 0.000 claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 6
- 239000002243 precursor Substances 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- AQRLNPVMDITEJU-UHFFFAOYSA-N triethylsilane Chemical compound CC[SiH](CC)CC AQRLNPVMDITEJU-UHFFFAOYSA-N 0.000 claims description 4
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 3
- 239000005052 trichlorosilane Substances 0.000 claims description 3
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- 150000001282 organosilanes Chemical class 0.000 claims description 2
- 229920000548 poly(silane) polymer Polymers 0.000 claims description 2
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 58
- 238000000151 deposition Methods 0.000 description 19
- 230000008021 deposition Effects 0.000 description 17
- 239000000463 material Substances 0.000 description 10
- 238000007711 solidification Methods 0.000 description 9
- 230000008023 solidification Effects 0.000 description 9
- 239000002585 base Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000004943 liquid phase epitaxy Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000001773 deep-level transient spectroscopy Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 238000000399 optical microscopy Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 102100031920 Dihydrolipoyllysine-residue succinyltransferase component of 2-oxoglutarate dehydrogenase complex, mitochondrial Human genes 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 101000992065 Homo sapiens Dihydrolipoyllysine-residue succinyltransferase component of 2-oxoglutarate dehydrogenase complex, mitochondrial Proteins 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001036 glow-discharge mass spectrometry Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001976 improved effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a new process for forming an epitaxial silicon layer, of good quality and having a crystallite size greater than or equal to 100 ⁇ .
- the photovoltaic market is experiencing strong growth and diversification of applications.
- the pursuit of this growth implies to be able to reduce the manufacturing costs of solar cells, mainly made from silicon.
- the conventional method consists in using a wafer of silicon approximately 200 ⁇ thick as the basic support of the solar cell.
- the reduction in manufacturing costs of a photovoltaic cell involves reducing the consumption of silicon during its manufacturing process.
- one solution is to deposit a thin layer of silicon of a few tens of microns on a mechanical support called substrate.
- the deposition when the deposition is carried out at low temperature, for example by PVD or CVD, inexpensive substrates of glass or polymer type can be used.
- the layers are obtained with deposition rates of the order of nm.min -1 and the deposited silicon is amorphous or microcrystalline in nature with grain sizes ranging from 1 nm to 100 nm. low energy conversion efficiencies, typically at best of the order of 10%, are obtained.
- liquid phase epitaxy implements a liquid bath formed of the mixture of silicon and a metal solvent, the cooling of the bath allowing the deposit silicon by supersaturation of the mixture.
- the chemical vapor deposition (CVD) techniques make it possible to obtain silicon layers by thermal decomposition of a silicon-based precursor (generally SiH 4 or S 1 HCl 3 ). It is possible to obtain growth rates of several ⁇ m.min "1 , for substrate temperatures of 1000 to 1200 ° C. [2]
- these techniques generally require, in order to obtain layers of superior quality, to high purity silicon substrates, generally doped with boron or phosphorus (silicon monocrystalline (CZ) doped p or n type).
- CZ silicon monocrystalline
- TP-CVD Plasma-enhanced chemical vapor deposition
- TP-CVD plasma-enhanced chemical vapor deposition
- the technique has been used to produce diamond carbon deposits, ZnO, SiC, S1 3 N 4 [4], and the TP-CVD technique has been proposed in a low-pressure, low-temperature configuration.
- the layer obtained via this method does not have the desired crystallite size.
- the TP-CVD process causes a diffusion species dissociated by the plasma from the precursors throughout the deposition chamber, which is detrimental to the material yield of the process.
- the present invention aims precisely to provide a method that satisfies the aforementioned requirements.
- the present invention relates to a method for forming, by epitaxial growth in the vapor phase, at the surface of at least one silicon substrate, a crystallized silicon layer having a crystallite size greater than or equal to 100 ⁇ , comprising at least the steps consisting of: (i) having a silicon substrate having a grain size greater than or equal to 100 ⁇ and comprising a content of metal impurities ranging from 10 ppb to 1 ppm by weight; and
- step (ii) near the exit of the plasma torch.
- the deposition of the silicon layer is performed by maintaining the surface to be coated with said substrate at a distance (d) less than or equal to 10 cm from the output of the plasma torch.
- bottom of the plasma torch is understood to mean the lower base of the plasma device or applicator, in other words the lower base of the generally cylindrical tube in which the plasma is used.
- the inventors have discovered that it is possible to access a layer of epitaxial silicon of high crystallite size and very good crystalline quality, particularly suitable for application in a photovoltaic cell, by positioning the substrate to be coated. downstream of the plasma torch.
- Such a method is all the more surprising since it is known that the supply of heat by the torch (by convective transfer and / or electromagnetic coupling) generates temperature gradients within the substrate.
- the temperatures used according to the process greater than 1000 ° C.
- the silicon having a plastic behavior the temperature gradients are capable of causing a multiplication of the density of dislocations. It could thus be expected that the positioning of the substrate near the exit of the torch leads to a degradation of the properties of the material.
- the layers formed via the process of the invention are of very good crystalline quality, in particular with dislocation densities of less than 10 5 / cm 2 and up to 10 4 / cm 2 .
- crystallized silicon layer formed of crystallites of size greater than or equal to 100 ⁇ , in particular greater than or equal to 500 ⁇ and more preferably greater than or equal to 1 mm.
- the crystallographic method advantageously provides high energy conversion efficiencies when used in a photovoltaic cell.
- the method of the invention advantageously makes it possible to dispense with the use of expensive silicon substrates. It authorizes the implementation of an inexpensive silicon base substrate of the metallurgical-grade silicon type (Si-UMG).
- a silicon substrate is for example derived from ingots made by directed solidification.
- the silicon substrate used in the process of the invention may comprise a content of metal impurities, such as Fe, Cr, Al, etc., up to 1 ppm by weight.
- the "low cost" silicon substrates from the metallurgical industry are generally highly doped, in particular at least 10 ppm by weight of boron and 10 ppm by weight of phosphorus, they can advantageously serve as a back electrode to the photovoltaic cell formed from such substrates, and thus have an electrical function in addition to their mechanical support function.
- the thermal plasma deposition according to the method of the invention advantageously makes it possible to achieve growth rates of the high epitaxial silicon layers, while increasing the material yields.
- the plasma torch flow of the plasma torch results in a substantial supply of energy, which reduces the need for auxiliary heating to reach the high temperatures necessary for producing an epitaxial layer.
- FIG. 1 shows schematically and partially, an installation adapted to the implementation of the method according to the invention
- Figure 2 shows schematically and partially, a variant of the installation of Figure 1, for the continuous treatment of several substrates according to the method of the invention.
- FIG. 3 shows an enlargement of the area adjacent to the output of the plasma torch in the facilities shown in Figures 1 and 2.
- substrate refers to a solid base structure on one side of which is deposited the silicon layer according to the method of the invention.
- the silicon substrate is in particular a multicrystalline silicon substrate.
- the silicon substrate implemented in step (i) of the process of the invention has a grain size greater than or equal to 100 ⁇ .
- the grain size of said substrate may be between 100 ⁇ and 20 mm, in particular between 1 mm and 10 mm.
- the average size of the silicon grains can be measured by optical microscopy or scanning electron microscopy.
- the silicon substrate used in step (i) of the process of the invention has a content of metal impurities ranging from 10 ppb to 1 ppm by weight.
- said substrate may comprise metallic impurities, such as Fe, Al, Ti, Cr, Cu or their mixtures, in a content ranging from 50 ppb to 1 ppm by weight.
- These metal impurities may be more particularly iron or aluminum.
- the content of metallic impurities can for example be determined by the Glow Discharge Mass Spectroscopy technique or by ICP-MS (Inductively Coupled Plasma Mass Spectrometer).
- the substrate used may be more particularly a silicon substrate called "metallurgical grade improved" (UMG-Si).
- UMG-Si metalurgical grade improved
- Such a silicon substrate may for example be derived from a silicon ingot, purified by directed solidification.
- Directed solidification advantageously makes it possible to reduce the content of metallic impurities present in a silicon ingot. It is generally carried out by initially melting, partially or totally, the raw material, then subjecting it to a cooling phase after thermal stabilization. The directed solidification process creates at the end of the ingot a surface layer containing the impurities which will then be removed (scribing step).
- such silicon ingot, purified by directed solidification can be obtained via a process comprising at least the steps of:
- the material enriched in compounds other than silicon may be removed by cutting the side portions, bottom and top, of the ingot obtained.
- the silicon ingot UMG-Si type can then be sliced, according to techniques well known to those skilled in the art.
- the silicon substrate used in step (i) of the process of the invention can thus have a thickness ranging from 200 to 700 ⁇ , in particular from 300 to 500 ⁇ .
- the silicon substrate used in the process of the invention may also comprise one or more doping agents, in particular one or more P-type and / or N-type doping agents.
- said substrate may comprise one or more P-type doping agent (s), for example aluminum (Al), gallium (Ga), indium (In), boron (B), in particular boron.
- P-type doping agent for example aluminum (Al), gallium (Ga), indium (In), boron (B), in particular boron.
- the said P-type dopant agent (s) may be present in the substrate in a content of at least 10 ppm by weight, in particular ranging from 10 to 50 ppm by weight.
- said substrate may comprise one or more N-type doping agent (s), for example antimony (Sb), arsenic (As), phosphorus (P), particular phosphorus.
- s for example antimony (Sb), arsenic (As), phosphorus (P), particular phosphorus.
- the N-type dopant agent (s) may be present in the substrate in a content of at least 10 ppm by weight, in particular ranging from 10 to 50 ppm by weight.
- the substrate may comprise at least one P-type doping agent, in particular boron, and at least one N-type doping agent. , in particular phosphorus.
- the silicon substrate used in step (i) of the process according to the invention comprises from 10 to 50 ppm by weight of boron and from 10 to 50 ppm by weight of phosphorus.
- a silicon layer on the surface of the substrate is carried out by epitaxial growth in the vapor phase using an inductive plasma torch.
- the torch used according to the invention is an inductive plasma torch, that is to say a torch without an electrode, the plasma being generated by high frequency excitation of plasma gas.
- Any type of inductive plasma torch, known to those skilled in the art, may be suitable.
- an inductive plasma torch has, in particular with respect to the use of an electric plasma plasma torch ("plasma arc"), the advantage of not polluting the deposited layer by erosion of the electrode necessary for the generation of the arc plasma.
- plasma arc electric plasma plasma torch
- the device or applicator of the plasma is more particularly, for an inductive plasma torch, in the form of a tube (4), schematized in Figure 1, of insulating material, for example quartz, for the formation of plasma.
- the high frequency field of creation of the plasma is produced by a winding wound around the tube (induction turns (9)), powered by a high frequency generator of sufficient power.
- the plasma can for example be generated using a radiofrequency inductive coupling (RF) generator, in particular whose power ranges from 2 kW to 20 kW.
- RF radiofrequency inductive coupling
- the generator can operate at a frequency ranging from 1 to 20 MHz.
- the tube, plasma applicator receives, in its upper part, a mixture of plasma gas (s) and at least one silicon precursor.
- a plasma jet is formed which is directed on the substrate.
- a mixture of plasma gases for example a mixture of argon and hydrogen
- a two way not possible to inject the silicon precursor gas e.g. SiH 4
- a plasma gas e.g. argon
- plasma gas s
- gas gas or gas mixture, in which the plasma is created.
- the plasmagenic gases are generally chosen from argon, helium, neon, hydrogen and their mixtures.
- the plasmagenic gas according to the invention advantageously comprises argon, preferably a mixture of argon and hydrogen, the proportion of hydrogen in the mixture being more particularly between 2 and 30% volume, in particular between 5 and 20% by volume.
- silicon precursor in the sense of the invention a compound capable of releasing, by decomposition within the plasma, silicon.
- silane SiH 4
- polysilanes such as Si 2 H 6 and Si 3 I3 ⁇ 4
- halosilanes of formula SiX n H 4 n with X Cl, Br or F, and n less than or equal to 4, in particular SiHBr 3 or SiHCl 3
- organosilanes in particular SiCl 3 CH 3 or triethylsilane; and their mixtures.
- the silicon precursor is selected from silane and halosilanes.
- it may be silane or trichlorosilane (TCS).
- the at least one silicon precursor may represent from 1 to 10% of the total gas volume of the plasma and precursor gases supplying the torch.
- the plasma is formed from a mixture of argon, hydrogen and one or more gaseous precursors of silicon, in particular silane.
- the device may comprise, in a conventional manner, means not shown in FIG. 1, making it possible to control the feed rate of the torch, for example by means of valves.
- the gas flow rate of the plasma torch (4) in step (ii) is between 0.1 and 10 L.min 1 , in particular between 1 and 5 L.min 1 .
- the plasma torch (4) may more particularly operate at a pressure ranging from 50 to 400 mbar, preferably ranging from 150 to 300 mbar.
- the deposition of silicon using the inductive plasma torch can be performed within an enclosure whose pressure is controlled by means of a pumping device (7), in order to purge the enclosure or improve the flow of gas.
- the substrate is maintained in step (ii) at a temperature between 1000 and 1300 ° C.
- said substrate is maintained during step (ii) at a temperature of between 1100 ° C. and 1200 ° C.
- the substrate may be heated prior to exposure to the plasma torch to achieve the desired temperature.
- the temperature of the substrate is kept constant throughout the duration of formation of the epitaxial silicon layer.
- the temperature of said substrate in step (ii) can be obtained by heating with a heating means separate from said plasma torch, for example by means of a graphite resistive heating device.
- the substrate (1) is positioned on a substrate holder equipped with a graphite heater (6), from which the substrate is separated by a layer of electrical insulation. (5).
- the surface of the substrate on which the epitaxial layer is to be formed is positioned near the exit of the plasma torch.
- the surface (1 1) of the substrate is more particularly maintained in step (ii) at a distance (d) less than or equal to 10 cm from the output of the plasma torch.
- this distance (d) is measured between the lower base of the generally cylindrical tube (4) in which the plasma is used (and not the downstream end of the induction coil which could be mobile ), and the surface (11) of the substrate.
- this distance (d) is non-zero.
- the distance (d) may be between 1 and 10 cm, and more particularly between 3 and 6 cm.
- the exposure time of the surface (1 1) of the substrate to the plasma is of course adjusted to the thickness of the desired epitaxial silicon layer.
- the exposure of the surface (11) to the plasma in step (ii) according to the invention can be carried out for a duration ranging from 5 minutes to 1 hour, preferably from 10 minutes to 30 minutes.
- the deposition rate of the silicon layer (2) depends, of course, on the dissociation rate of the free radical silicon precursor.
- said silicon substrate (1) may be polarized during step (ii) with a negative voltage, in particular with a voltage ranging from -200 volts to -10 volts.
- This polarization can be operated using a DC or AC source (8), as shown schematically in FIG.
- Such polarization of the substrate advantageously makes it possible to increase the growth rate of the epitaxial silicon layer by promoting the transport of the ions in the boundary layer between the plasma and the surface of the substrate.
- the deposition rate of the layer (2) of silicon in step (ii) may be at least 1 ⁇ m.min -1 , in particular greater than or equal to 2 ⁇ m.min -1 , and more particularly between 2 and 10 ⁇ m.min -1 .
- FIG. 2 An installation for implementing such an embodiment variant is shown schematically in FIG. 2, in which three substrates are successively exposed to the plasma (3) by a translational movement of the substrate carrier in the direction (I).
- the temperature of the substrate is preferably lowered gradually to room temperature so as to avoid thermal shocks.
- the substrate may be more particularly maintained under an argon atmosphere until the ambient temperature is reached, in order to avoid surface oxidation when the assembly is recovered.
- the crystallized silicon layer (2) obtained at the end of step (ii) of the process of the invention advantageously has a crystallite size of greater than or equal to 100 ⁇ .
- the size of the crystallites of said layer (2) may be greater than or equal to 500 ⁇ , preferably greater than or equal to 1 mm.
- This size can be measured by optical microscopy or scanning electron microscopy.
- the silicon layer (2) obtained at the end of step (ii) of the process of the invention may have a thickness ranging from 10 to 100 microns, in particular from 20 to 40 microns.
- a silicon layer (2) obtained according to the process of the invention is of good crystalline quality.
- it has a dislocation density of less than or equal to 10 5 / cm 2 , in particular less than 10 4 / cm 2 .
- the density of dislocations can be measured by the so-called "ETCH PITS" technique, corresponding to a method for revealing acid or basic solution etching patterns.
- the silicon layer (2) obtained at the end of step (ii) comprises a content of metal impurities ranging from 10 ppb to 100 ppb by weight.
- the metal impurity content can be measured by any technique known to those skilled in the art. It can for example be evaluated by Spectral Spectroscopy DLTS capacity ("Deep Level Transient Spectroscopy" in English).
- This technique consists of analyzing the emission and capture of traps associated with variations in the capacity of a p-n junction or a Schottky diode.
- the layer (2) formed at the end of step (ii) may be subjected to a subsequent step of extracting the impurities by external getter effect.
- This extraction step aims to remove the metallic impurities from the volume of a silicon substrate to confine them to the surfaces thereof where they can no longer have any influence on the operation of the photovoltaic cells manufactured from this substrate.
- this extraction step by external getter effect is operated by diffusion of phosphorus.
- Such a method makes it possible, not only to extract the metallic impurities, but also is a necessary step for the formation of p-n junction of the photovoltaic cell.
- the thin layer of silicon is obtained in an experimental device consisting of a water-cooled stainless steel enclosure, a cold-cage type plasma torch (4) and a substrate carrier also cooled by water. 'water.
- the substrate (1) is a UMG silicon substrate having a thickness of 400 ⁇ and an average grain size of 8 mm. It comprises a metal impurity content of 500 ppb, a boron content of 30 ppm and a phosphorus content of 10 ppm.
- the UMG silicon substrate is disposed on the substrate holder equipped with a resistive heating device (6) made of graphite in order to reach temperatures of the order of 1100 ° C.
- the temperature control is done using a thermocouple coupled to an electric generator.
- the pressure of the chamber is lowered to 1 mbar.
- the plasma discharge is initiated using an RF generator operating at a frequency of 4 MHz and a power of 10 kW.
- the UMG silicon substrate (1) is brought into contact with the plasma flow (3) at a distance (d) between the surface (11) to be coated and the exit of the torch by 2 cm.
- Hydrogen represents 10% of the mixture while the level of SiH 4 is set at 3% of the gaseous volume.
- the silicon substrate is negatively biased by means of the polarization device (8). A bias of -50 volts is then applied.
- the surface (1 1) of the substrate is exposed to the plasma for a period of 15 minutes.
- the introduction of the reactive gases, hydrogen and silane, is interrupted and the substrate is removed progressively from the plasma jet either by a vertical translation downwards or by a horizontal translation.
- the temperature of the substrate is lowered gradually at a rate of 10 ° C.min -1 by decreasing the external heating power.
- the substrate is maintained under an argon atmosphere until the ambient temperature is reached. to avoid surface oxidation when the whole is recovered.
- the formed silicon layer has a thickness of 30 ⁇ .
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Abstract
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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FR1258913A FR2995913B1 (fr) | 2012-09-24 | 2012-09-24 | Procede de formation d'une couche de silicium epitaxiee. |
PCT/IB2013/058770 WO2014045252A1 (fr) | 2012-09-24 | 2013-09-23 | Procede de formation d'une couche de silicium epitaxiee |
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EP2898123A1 true EP2898123A1 (fr) | 2015-07-29 |
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EP13798753.3A Withdrawn EP2898123A1 (fr) | 2012-09-24 | 2013-09-23 | Procede de formation d'une couche de silicium epitaxiee |
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US (1) | US20150299897A1 (fr) |
EP (1) | EP2898123A1 (fr) |
CN (1) | CN104781455A (fr) |
FR (1) | FR2995913B1 (fr) |
WO (1) | WO2014045252A1 (fr) |
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CN106283180A (zh) * | 2015-05-21 | 2017-01-04 | 丁欣 | 多晶硅的制造方法以及单晶硅的制造方法 |
CN110603350B (zh) * | 2017-04-06 | 2021-07-16 | 胜高股份有限公司 | 外延硅晶片的制造方法及外延硅晶片 |
CN114890428B (zh) * | 2022-04-29 | 2023-05-09 | 成都理工大学 | 一种用于工业硅炉外精炼的三元造渣剂及其除杂方法 |
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JPS5767017A (en) * | 1980-10-09 | 1982-04-23 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of thin silicon film |
US5455430A (en) * | 1991-08-01 | 1995-10-03 | Sanyo Electric Co., Ltd. | Photovoltaic device having a semiconductor grade silicon layer formed on a metallurgical grade substrate |
TW285746B (fr) * | 1994-10-26 | 1996-09-11 | Matsushita Electric Ind Co Ltd | |
JP2000058460A (ja) * | 1998-08-12 | 2000-02-25 | Mitsubishi Heavy Ind Ltd | シリコン薄膜製造方法 |
TW455912B (en) * | 1999-01-22 | 2001-09-21 | Sony Corp | Method and apparatus for film deposition |
DE19960823B4 (de) * | 1999-12-16 | 2007-04-12 | Siltronic Ag | Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe und deren Verwendung |
DE60139426D1 (de) * | 2000-03-03 | 2009-09-10 | Midwest Research Inst | Al verfahren um verunreinigungen aus silizium zu gettern |
US6818533B2 (en) * | 2002-05-09 | 2004-11-16 | Taiwan Semiconductor Manufacturing Co., Ltd | Epitaxial plasma enhanced chemical vapor deposition (PECVD) method providing epitaxial layer with attenuated defects |
US7468311B2 (en) * | 2003-09-30 | 2008-12-23 | Tokyo Electron Limited | Deposition of silicon-containing films from hexachlorodisilane |
JP5338069B2 (ja) * | 2007-12-18 | 2013-11-13 | セイコーエプソン株式会社 | 接合方法 |
US20090325340A1 (en) * | 2008-06-30 | 2009-12-31 | Mohd Aslami | Plasma vapor deposition system and method for making multi-junction silicon thin film solar cell modules and panels |
WO2011142125A1 (fr) * | 2010-05-13 | 2011-11-17 | パナソニック株式会社 | Dispositif et procédé de traitement par plasma |
FR2968316B1 (fr) * | 2010-12-01 | 2013-06-28 | Commissariat Energie Atomique | Procede de preparation d'une couche de silicium cristallise a gros grains |
-
2012
- 2012-09-24 FR FR1258913A patent/FR2995913B1/fr not_active Expired - Fee Related
-
2013
- 2013-09-23 EP EP13798753.3A patent/EP2898123A1/fr not_active Withdrawn
- 2013-09-23 WO PCT/IB2013/058770 patent/WO2014045252A1/fr active Application Filing
- 2013-09-23 CN CN201380058621.9A patent/CN104781455A/zh active Pending
- 2013-09-23 US US14/430,800 patent/US20150299897A1/en not_active Abandoned
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CN104781455A (zh) | 2015-07-15 |
WO2014045252A1 (fr) | 2014-03-27 |
US20150299897A1 (en) | 2015-10-22 |
FR2995913B1 (fr) | 2014-10-10 |
FR2995913A1 (fr) | 2014-03-28 |
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