MX155307A - Metodo mejorado para fabricar un panel fotovoltaico - Google Patents

Metodo mejorado para fabricar un panel fotovoltaico

Info

Publication number
MX155307A
MX155307A MX187268A MX18726881A MX155307A MX 155307 A MX155307 A MX 155307A MX 187268 A MX187268 A MX 187268A MX 18726881 A MX18726881 A MX 18726881A MX 155307 A MX155307 A MX 155307A
Authority
MX
Mexico
Prior art keywords
manufacturing
improved method
photovoltaic panel
photovoltaic
panel
Prior art date
Application number
MX187268A
Other languages
English (en)
Inventor
Stanford R Ovshinsky
Vincent D Cannella
Masatsugu Izu
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of MX155307A publication Critical patent/MX155307A/es

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
MX187268A 1980-05-19 1981-05-12 Metodo mejorado para fabricar un panel fotovoltaico MX155307A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/151,301 US4400409A (en) 1980-05-19 1980-05-19 Method of making p-doped silicon films

Publications (1)

Publication Number Publication Date
MX155307A true MX155307A (es) 1988-02-16

Family

ID=22538142

Family Applications (1)

Application Number Title Priority Date Filing Date
MX187268A MX155307A (es) 1980-05-19 1981-05-12 Metodo mejorado para fabricar un panel fotovoltaico

Country Status (19)

Country Link
US (1) US4400409A (es)
JP (5) JPS5743413A (es)
KR (3) KR840000756B1 (es)
AU (3) AU542845B2 (es)
BR (1) BR8103030A (es)
CA (1) CA1184096A (es)
DE (3) DE3119481C2 (es)
ES (3) ES502281A0 (es)
FR (1) FR2482786B1 (es)
GB (3) GB2076433B (es)
IE (1) IE52688B1 (es)
IL (1) IL62883A (es)
IN (1) IN155670B (es)
IT (1) IT1135827B (es)
MX (1) MX155307A (es)
NL (1) NL8102411A (es)
PH (1) PH18408A (es)
SE (1) SE456380B (es)
ZA (1) ZA813076B (es)

Families Citing this family (137)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5091334A (en) * 1980-03-03 1992-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPS5713777A (en) 1980-06-30 1982-01-23 Shunpei Yamazaki Semiconductor device and manufacture thereof
US4677738A (en) * 1980-05-19 1987-07-07 Energy Conversion Devices, Inc. Method of making a photovoltaic panel
US5859443A (en) * 1980-06-30 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US5262350A (en) * 1980-06-30 1993-11-16 Semiconductor Energy Laboratory Co., Ltd. Forming a non single crystal semiconductor layer by using an electric current
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US4542711A (en) * 1981-03-16 1985-09-24 Sovonics Solar Systems Continuous system for depositing amorphous semiconductor material
EP0078541B1 (en) * 1981-11-04 1991-01-16 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Flexible photovoltaic device
JPS58169980A (ja) * 1982-03-19 1983-10-06 Matsushita Electric Ind Co Ltd 光起電力素子の製造方法
US4485125A (en) * 1982-03-19 1984-11-27 Energy Conversion Devices, Inc. Method for continuously producing tandem amorphous photovoltaic cells
US4423701A (en) * 1982-03-29 1984-01-03 Energy Conversion Devices, Inc. Glow discharge deposition apparatus including a non-horizontally disposed cathode
US4462332A (en) * 1982-04-29 1984-07-31 Energy Conversion Devices, Inc. Magnetic gas gate
JPS58196063A (ja) * 1982-05-10 1983-11-15 Matsushita Electric Ind Co Ltd 光起電力素子の製造方法
JPS5934668A (ja) * 1982-08-21 1984-02-25 Agency Of Ind Science & Technol 薄膜太陽電池の製造方法
JPS5950575A (ja) * 1982-09-16 1984-03-23 Agency Of Ind Science & Technol 太陽電池の製造方法
JPS5961077A (ja) * 1982-09-29 1984-04-07 Nippon Denso Co Ltd アモルフアスシリコン太陽電池
US4443652A (en) * 1982-11-09 1984-04-17 Energy Conversion Devices, Inc. Electrically interconnected large area photovoltaic cells and method of producing said cells
US4515107A (en) * 1982-11-12 1985-05-07 Sovonics Solar Systems Apparatus for the manufacture of photovoltaic devices
JPS59201471A (ja) * 1983-04-29 1984-11-15 Semiconductor Energy Lab Co Ltd 光電変換半導体装置
US4513684A (en) * 1982-12-22 1985-04-30 Energy Conversion Devices, Inc. Upstream cathode assembly
US4483883A (en) * 1982-12-22 1984-11-20 Energy Conversion Devices, Inc. Upstream cathode assembly
JPS60119784A (ja) * 1983-12-01 1985-06-27 Kanegafuchi Chem Ind Co Ltd 絶縁金属基板の製法およびそれに用いる装置
AU562641B2 (en) 1983-01-18 1987-06-18 Energy Conversion Devices Inc. Electronic matrix array
US4479455A (en) * 1983-03-14 1984-10-30 Energy Conversion Devices, Inc. Process gas introduction and channeling system to produce a profiled semiconductor layer
JPH0614556B2 (ja) * 1983-04-29 1994-02-23 株式会社半導体エネルギー研究所 光電変換装置及びその作製方法
JPS59228716A (ja) * 1983-06-10 1984-12-22 Sanyo Electric Co Ltd 気相成長法
US4480585A (en) * 1983-06-23 1984-11-06 Energy Conversion Devices, Inc. External isolation module
DE3400843A1 (de) * 1983-10-29 1985-07-18 VEGLA Vereinigte Glaswerke GmbH, 5100 Aachen Verfahren zum herstellen von autoglasscheiben mit streifenfoermigen blendschutzfiltern durch bedampfen oder sputtern, und vorrichtung zur durchfuehrung des verfahrens
US4514583A (en) * 1983-11-07 1985-04-30 Energy Conversion Devices, Inc. Substrate for photovoltaic devices
JPS60214572A (ja) * 1984-04-11 1985-10-26 Matsushita Electric Ind Co Ltd 薄膜太陽電池およびその製造方法
US4634605A (en) * 1984-05-23 1987-01-06 Wiesmann Harold J Method for the indirect deposition of amorphous silicon and polycrystalline silicone and alloys thereof
JPS61133676A (ja) * 1984-12-03 1986-06-20 Showa Alum Corp a−Si太陽電池用基板
JPS6142972A (ja) * 1984-08-06 1986-03-01 Showa Alum Corp a−Si太陽電池用基板の製造方法
JPS6179548U (es) * 1984-10-31 1986-05-27
US4609771A (en) * 1984-11-02 1986-09-02 Sovonics Solar Systems Tandem junction solar cell devices incorporating improved microcrystalline p-doped semiconductor alloy material
JPS61133675A (ja) * 1984-12-03 1986-06-20 Showa Alum Corp a−Si太陽電池用基板の製造方法
US4566403A (en) * 1985-01-30 1986-01-28 Sovonics Solar Systems Apparatus for microwave glow discharge deposition
FR2581781B1 (fr) * 1985-05-07 1987-06-12 Thomson Csf Elements de commande non lineaire pour ecran plat de visualisation electrooptique et son procede de fabrication
US4664951A (en) * 1985-07-31 1987-05-12 Energy Conversion Devices, Inc. Method provided for corrective lateral displacement of a longitudinally moving web held in a planar configuration
JPS6292485A (ja) * 1985-10-18 1987-04-27 Sanyo Electric Co Ltd 太陽電池の製造方法
FR2593343B1 (fr) * 1986-01-20 1988-03-25 Thomson Csf Matrice d'elements photosensibles et son procede de fabrication, procede de lecture associe, et application de cette matrice a la prise de vue d'images
JPH0744286B2 (ja) * 1986-03-04 1995-05-15 三菱電機株式会社 非晶質光発電素子モジュールの製造方法
US4841908A (en) * 1986-06-23 1989-06-27 Minnesota Mining And Manufacturing Company Multi-chamber deposition system
US4874631A (en) * 1986-06-23 1989-10-17 Minnesota Mining And Manufacturing Company Multi-chamber deposition system
IL82673A0 (en) * 1986-06-23 1987-11-30 Minnesota Mining & Mfg Multi-chamber depositions system
US5031571A (en) * 1988-02-01 1991-07-16 Mitsui Toatsu Chemicals, Inc. Apparatus for forming a thin film on a substrate
DE3809010C2 (de) * 1988-03-17 1998-02-19 Siemens Ag Verfahren zum Herstellen mikrokristalliner, n- oder p-leitender Siliziumschichten nach der Glimmentladungsplasmatechnik, geeignet für Solarzellen
JPH0351971Y2 (es) * 1988-05-12 1991-11-08
US5053625A (en) * 1988-08-04 1991-10-01 Minnesota Mining And Manufacturing Company Surface characterization apparatus and method
US5001939A (en) * 1988-08-04 1991-03-26 Minnesota Mining And Manufacturing Co. Surface characterization apparatus and method
JPH02235327A (ja) * 1989-03-08 1990-09-18 Fujitsu Ltd 半導体成長装置および半導体成長方法
US5098850A (en) * 1989-06-16 1992-03-24 Canon Kabushiki Kaisha Process for producing substrate for selective crystal growth, selective crystal growth process and process for producing solar battery by use of them
EP0406690B1 (en) * 1989-06-28 1997-03-12 Canon Kabushiki Kaisha Process for continuously forming a large area functional deposited film by microwave PCVD method and an apparatus suitable for practicing the same
US5130170A (en) * 1989-06-28 1992-07-14 Canon Kabushiki Kaisha Microwave pcvd method for continuously forming a large area functional deposited film using a curved moving substrate web with microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation
US5281541A (en) * 1990-09-07 1994-01-25 Canon Kabushiki Kaisha Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method
US5225378A (en) * 1990-11-16 1993-07-06 Tokyo Electron Limited Method of forming a phosphorus doped silicon film
JP2824808B2 (ja) * 1990-11-16 1998-11-18 キヤノン株式会社 マイクロ波プラズマcvd法による大面積の機能性堆積膜を連続的に形成する装置
US5629054A (en) * 1990-11-20 1997-05-13 Canon Kabushiki Kaisha Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method
JP2810532B2 (ja) * 1990-11-29 1998-10-15 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
JP3101330B2 (ja) * 1991-01-23 2000-10-23 キヤノン株式会社 マイクロ波プラズマcvd法による大面積の機能性堆積膜を連続的に形成する方法及び装置
JP2975151B2 (ja) * 1991-03-28 1999-11-10 キヤノン株式会社 半導体素子の連続的製造装置
JP3118037B2 (ja) * 1991-10-28 2000-12-18 キヤノン株式会社 堆積膜形成方法および堆積膜形成装置
JP3073327B2 (ja) * 1992-06-30 2000-08-07 キヤノン株式会社 堆積膜形成方法
DE4324320B4 (de) * 1992-07-24 2006-08-31 Fuji Electric Co., Ltd., Kawasaki Verfahren und Vorrichtung zur Herstellung einer als dünne Schicht ausgebildeten fotovoltaischen Umwandlungsvorrichtung
US6720576B1 (en) 1992-09-11 2004-04-13 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and photoelectric conversion device
US5821597A (en) * 1992-09-11 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
DE69410301T2 (de) * 1993-01-29 1998-09-24 Canon Kk Verfahren zur Herstellung funktioneller niedergeschlagener Schichten
JPH0653534A (ja) * 1993-02-04 1994-02-25 Semiconductor Energy Lab Co Ltd 光電変換装置
JP3571785B2 (ja) * 1993-12-28 2004-09-29 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
DE9407482U1 (de) * 1994-05-05 1994-10-06 Leybold Ag Funktionseinrichtung für eine Vakuumanlage für die Behandlung von scheibenförmigen Werkstücken
JP3169337B2 (ja) * 1995-05-30 2001-05-21 キヤノン株式会社 光起電力素子及びその製造方法
US6273955B1 (en) 1995-08-28 2001-08-14 Canon Kabushiki Kaisha Film forming apparatus
US6096389A (en) * 1995-09-14 2000-08-01 Canon Kabushiki Kaisha Method and apparatus for forming a deposited film using a microwave CVD process
JP3025179B2 (ja) * 1995-09-28 2000-03-27 キヤノン株式会社 光電変換素子の形成方法
JPH09199431A (ja) * 1996-01-17 1997-07-31 Canon Inc 薄膜形成方法および薄膜形成装置
US6153013A (en) * 1996-02-16 2000-11-28 Canon Kabushiki Kaisha Deposited-film-forming apparatus
US5849108A (en) * 1996-04-26 1998-12-15 Canon Kabushiki Kaisha Photovoltaic element with zno layer having increasing fluorine content in layer thickness direction
JP3437386B2 (ja) * 1996-09-05 2003-08-18 キヤノン株式会社 光起電力素子、並びにその製造方法
US6159763A (en) * 1996-09-12 2000-12-12 Canon Kabushiki Kaisha Method and device for forming semiconductor thin film, and method and device for forming photovoltaic element
US6057005A (en) * 1996-12-12 2000-05-02 Canon Kabushiki Kaisha Method of forming semiconductor thin film
US6159300A (en) * 1996-12-17 2000-12-12 Canon Kabushiki Kaisha Apparatus for forming non-single-crystal semiconductor thin film, method for forming non-single-crystal semiconductor thin film, and method for producing photovoltaic device
US6726812B1 (en) 1997-03-04 2004-04-27 Canon Kabushiki Kaisha Ion beam sputtering apparatus, method for forming a transparent and electrically conductive film, and process for the production of a semiconductor device
JPH1180964A (ja) 1997-07-07 1999-03-26 Canon Inc プラズマcvd法による堆積膜形成装置
US6268233B1 (en) 1998-01-26 2001-07-31 Canon Kabushiki Kaisha Photovoltaic device
JPH11251612A (ja) 1998-03-03 1999-09-17 Canon Inc 光起電力素子の製造方法
JPH11246971A (ja) * 1998-03-03 1999-09-14 Canon Inc 微結晶シリコン系薄膜の作製方法及び作製装置
EP0977246A3 (en) 1998-07-31 2005-11-09 Canon Kabushiki Kaisha Production process of semiconductor layer, fabrication process of photovoltaic cell and production apparatus of semiconductor layer
JP2000192244A (ja) 1998-10-16 2000-07-11 Canon Inc 堆積膜の形成装置及び形成方法
JP2000204478A (ja) 1998-11-11 2000-07-25 Canon Inc 基板処理装置及び基板処理方法
JP2001040478A (ja) 1999-05-27 2001-02-13 Canon Inc 堆積膜形成装置及び堆積膜形成方法
JP3870014B2 (ja) 1999-07-26 2007-01-17 キヤノン株式会社 真空処理装置および真空処理方法
US6547922B2 (en) * 2000-01-31 2003-04-15 Canon Kabushiki Kaisha Vacuum-processing apparatus using a movable cooling plate during processing
JP2001323376A (ja) * 2000-03-06 2001-11-22 Canon Inc 堆積膜の形成装置
US6667240B2 (en) 2000-03-09 2003-12-23 Canon Kabushiki Kaisha Method and apparatus for forming deposited film
JP4439665B2 (ja) * 2000-03-29 2010-03-24 株式会社半導体エネルギー研究所 プラズマcvd装置
JP2002020863A (ja) 2000-05-01 2002-01-23 Canon Inc 堆積膜の形成方法及び形成装置、及び基板処理方法
US6541316B2 (en) * 2000-12-22 2003-04-01 The Regents Of The University Of California Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction
JP2002305315A (ja) 2001-01-31 2002-10-18 Canon Inc 半導体素子の形成方法及び半導体素子
KR100434794B1 (ko) * 2001-02-22 2004-06-07 최동열 잉크젯 날염용 원단지 및 그 제조방법
JP4651072B2 (ja) 2001-05-31 2011-03-16 キヤノン株式会社 堆積膜形成方法、および堆積膜形成装置
GB0202125D0 (en) * 2002-01-30 2002-03-20 Qinetiq Ltd Dark coatings
ATE326556T1 (de) * 2002-03-15 2006-06-15 Vhf Technologies Sa Vorrichtung und verfahren zur herstellung von flexiblen halbleiter-einrichtungen
GB0212062D0 (en) * 2002-05-24 2002-07-03 Vantico Ag Jetable compositions
JP2004043910A (ja) * 2002-07-12 2004-02-12 Canon Inc 堆積膜形成方法および形成装置
JP2004300574A (ja) * 2003-03-20 2004-10-28 Canon Inc 基板処理装置
JP4731913B2 (ja) 2003-04-25 2011-07-27 株式会社半導体エネルギー研究所 パターンの形成方法および半導体装置の製造方法
JP2004335706A (ja) * 2003-05-07 2004-11-25 Canon Inc 半導体素子の形成方法
RU2240280C1 (ru) 2003-10-10 2004-11-20 Ворлд Бизнес Ассошиэйтс Лимитед Способ формирования упорядоченных волнообразных наноструктур (варианты)
US7768018B2 (en) * 2003-10-10 2010-08-03 Wostec, Inc. Polarizer based on a nanowire grid
US7462514B2 (en) * 2004-03-03 2008-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same, liquid crystal television, and EL television
US20050196710A1 (en) * 2004-03-04 2005-09-08 Semiconductor Energy Laboratory Co., Ltd. Method for forming pattern, thin film transistor, display device and method for manufacturing the same, and television apparatus
JP4416569B2 (ja) * 2004-05-24 2010-02-17 キヤノン株式会社 堆積膜形成方法および堆積膜形成装置
DE112005001429T5 (de) * 2004-06-18 2007-04-26 Innovalight, Inc., St. Paul Verfahren und Vorrichtung zum Bilden von Nanopartikeln unter Verwendung von Hochfrequenzplasmen
US8158517B2 (en) * 2004-06-28 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing wiring substrate, thin film transistor, display device and television device
US20090014423A1 (en) * 2007-07-10 2009-01-15 Xuegeng Li Concentric flow-through plasma reactor and methods therefor
US20080220175A1 (en) * 2007-01-22 2008-09-11 Lorenzo Mangolini Nanoparticles wtih grafted organic molecules
US8066840B2 (en) * 2007-01-22 2011-11-29 Solopower, Inc. Finger pattern formation for thin film solar cells
WO2008143716A2 (en) * 2007-01-22 2008-11-27 Innovalight, Inc. In situ modification of group iv nanoparticles using gas phase nanoparticle reactors
US8968438B2 (en) * 2007-07-10 2015-03-03 Innovalight, Inc. Methods and apparatus for the in situ collection of nucleated particles
US8471170B2 (en) 2007-07-10 2013-06-25 Innovalight, Inc. Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor
GB2453766A (en) * 2007-10-18 2009-04-22 Novalia Ltd Method of fabricating an electronic device
DE102008043458A1 (de) * 2008-11-04 2010-05-12 Q-Cells Se Solarzelle
KR20110015998A (ko) * 2009-08-10 2011-02-17 삼성전자주식회사 태양 전지 및 그 제조 방법
US20110083724A1 (en) * 2009-10-08 2011-04-14 Ovshinsky Stanford R Monolithic Integration of Photovoltaic Cells
TWI501412B (zh) * 2010-06-22 2015-09-21 Iner Aec Executive Yuan 具有改良的光捕捉結構之太陽電池
ES2509967T3 (es) * 2011-02-24 2014-10-20 Soitec Solar Gmbh Disposiciones de células solares para módulos fotovoltaicos concentradores
WO2013006077A1 (en) 2011-07-06 2013-01-10 Wostec, Inc. Solar cell with nanostructured layer and methods of making and using
JP5840294B2 (ja) 2011-08-05 2016-01-06 ウォステック・インコーポレイテッドWostec, Inc ナノ構造層を有する発光ダイオードならびに製造方法および使用方法
WO2013089578A1 (en) 2011-12-12 2013-06-20 Wostec, Inc. Sers-sensor with nanostructured surface and methods of making and using
EP2795786B1 (en) * 2011-12-19 2018-07-11 Printed Energy Pty Ltd. Solar cell structure with graded refractive index lens
US9653627B2 (en) 2012-01-18 2017-05-16 Wostec, Inc. Arrangements with pyramidal features having at least one nanostructured surface and methods of making and using
US9134250B2 (en) 2012-03-23 2015-09-15 Wostec, Inc. SERS-sensor with nanostructured layer and methods of making and using
US9500789B2 (en) 2013-03-13 2016-11-22 Wostec, Inc. Polarizer based on a nanowire grid
US9748423B2 (en) * 2014-01-16 2017-08-29 Fundacio Institut De Ciencies Fotoniques Photovoltaic device with fiber array for sun tracking
WO2015199573A1 (en) 2014-06-26 2015-12-30 Wostec, Inc. Wavelike hard nanomask on a topographic feature and methods of making and using
WO2018093284A1 (en) 2016-11-18 2018-05-24 Wostec, Inc. Optical memory devices using a silicon wire grid polarizer and methods of making and using
WO2018156042A1 (en) 2017-02-27 2018-08-30 Wostec, Inc. Nanowire grid polarizer on a curved surface and methods of making and using

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US406452A (en) * 1889-07-09 Method of making cannon
FR2133498B1 (es) * 1971-04-15 1977-06-03 Labo Electronique Physique
GB1342972A (en) * 1971-08-28 1974-01-10 Wildt Mellor Bromley Ltd Knitting machine needle
JPS5631297B2 (es) * 1973-05-29 1981-07-20
US3979271A (en) * 1973-07-23 1976-09-07 Westinghouse Electric Corporation Deposition of solid semiconductor compositions and novel semiconductor materials
FR2265872B1 (es) * 1974-03-27 1977-10-14 Anvar
US3969163A (en) * 1974-09-19 1976-07-13 Texas Instruments Incorporated Vapor deposition method of forming low cost semiconductor solar cells including reconstitution of the reacted gases
JPS51113481A (en) * 1975-03-28 1976-10-06 Sony Corp Semiconductor device
JPS51141587A (en) * 1975-05-30 1976-12-06 Sharp Kk Method of producing solar battery
IT1062510B (it) * 1975-07-28 1984-10-20 Rca Corp Dispositivo semiconduttore presentante una regione attiva di silicio amorfo
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
US4152535A (en) * 1976-07-06 1979-05-01 The Boeing Company Continuous process for fabricating solar cells and the product produced thereby
US4042418A (en) 1976-08-02 1977-08-16 Westinghouse Electric Corporation Photovoltaic device and method of making same
DE2638269C2 (de) * 1976-08-25 1983-05-26 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung von substratgebundenem, großflächigem Silicium
US4196438A (en) * 1976-09-29 1980-04-01 Rca Corporation Article and device having an amorphous silicon containing a halogen and method of fabrication
US4133697A (en) * 1977-06-24 1979-01-09 Nasa Solar array strip and a method for forming the same
US4117506A (en) 1977-07-28 1978-09-26 Rca Corporation Amorphous silicon photovoltaic device having an insulating layer
DE2746967C2 (de) * 1977-10-19 1981-09-24 Siemens AG, 1000 Berlin und 8000 München Elektrofotographische Aufzeichnungstrommel
AU530905B2 (en) * 1977-12-22 1983-08-04 Canon Kabushiki Kaisha Electrophotographic photosensitive member
DE2757301A1 (de) * 1977-12-22 1979-07-05 Leybold Heraeus Gmbh & Co Kg Vorrichtung zur umwandlung von strahlung in elektrische energie und verfahren zur herstellung der vorrichtung
US4264962A (en) 1978-02-07 1981-04-28 Beam Engineering Kabushiki Kaisha Small-sized electronic calculator
US4342044A (en) * 1978-03-08 1982-07-27 Energy Conversion Devices, Inc. Method for optimizing photoresponsive amorphous alloys and devices
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
US4163677A (en) * 1978-04-28 1979-08-07 Rca Corporation Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier
DE2827049A1 (de) 1978-06-20 1980-01-10 Siemens Ag Solarzellenbatterie und verfahren zu ihrer herstellung
US4202928A (en) * 1978-07-24 1980-05-13 Rca Corporation Updateable optical storage medium
JPS5529154A (en) * 1978-08-23 1980-03-01 Shunpei Yamazaki Semiconductor device
JPS5559783A (en) * 1978-10-27 1980-05-06 Canon Inc Electronic device with solar battery
JPS5578524A (en) * 1978-12-10 1980-06-13 Shunpei Yamazaki Manufacture of semiconductor device
GB2038086A (en) * 1978-12-19 1980-07-16 Standard Telephones Cables Ltd Amorphous semiconductor devices
JPS5934421B2 (ja) * 1979-11-29 1984-08-22 住友電気工業株式会社 薄膜製造法
DE3000889C2 (de) 1980-01-11 1984-07-26 Siemens AG, 1000 Berlin und 8000 München Verwendung einer um zwei Rollen umlaufenden Metallfolie zum Stranggießen von amorphem Silizium
IE52208B1 (en) * 1980-09-09 1987-08-05 Energy Conversion Devices Inc Method for increasing the band gap in photoresponsive amorphous alloys and devices

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KR860001476A (ko) 1986-02-26
ES8306923A1 (es) 1983-06-01
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IL62883A (en) 1984-11-30
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IT1135827B (it) 1986-08-27
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GB2076433B (en) 1985-06-12
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JPH0461510B2 (es) 1992-10-01
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JPS6122622A (ja) 1986-01-31
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