ES506319A0 - Un metodo para producir silicio de gran pureza. - Google Patents
Un metodo para producir silicio de gran pureza.Info
- Publication number
- ES506319A0 ES506319A0 ES506319A ES506319A ES506319A0 ES 506319 A0 ES506319 A0 ES 506319A0 ES 506319 A ES506319 A ES 506319A ES 506319 A ES506319 A ES 506319A ES 506319 A0 ES506319 A0 ES 506319A0
- Authority
- ES
- Spain
- Prior art keywords
- high purity
- producing high
- purity silicon
- silicon
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
- B01J12/005—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor carried out at high temperatures, e.g. by pyrolysis
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/26—Nozzle-type reactors, i.e. the distribution of the initial reactants within the reactor is effected by their introduction or injection through nozzles
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/033—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00054—Controlling or regulating the heat exchange system
- B01J2219/00056—Controlling or regulating the heat exchange system involving measured parameters
- B01J2219/00058—Temperature measurement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00132—Controlling the temperature using electric heating or cooling elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/0015—Controlling the temperature by thermal insulation means
- B01J2219/00153—Vacuum spaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00159—Controlling the temperature controlling multiple zones along the direction of flow, e.g. pre-heating and after-cooling
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US19910080A | 1980-10-20 | 1980-10-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
ES8301837A1 ES8301837A1 (es) | 1983-01-01 |
ES506319A0 true ES506319A0 (es) | 1983-01-01 |
Family
ID=22736211
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES506319A Granted ES506319A0 (es) | 1980-10-20 | 1981-10-16 | Un metodo para producir silicio de gran pureza. |
ES515367A Expired ES8306678A1 (es) | 1980-10-20 | 1982-08-30 | Un aparato para producir silicio de gran pureza |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES515367A Expired ES8306678A1 (es) | 1980-10-20 | 1982-08-30 | Un aparato para producir silicio de gran pureza |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0050324B1 (es) |
JP (1) | JPS57100912A (es) |
AU (1) | AU7616781A (es) |
CA (1) | CA1198581A (es) |
DE (1) | DE3175801D1 (es) |
DK (1) | DK460981A (es) |
ES (2) | ES506319A0 (es) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5354446A (en) * | 1988-03-03 | 1994-10-11 | Asahi Glass Company Ltd. | Ceramic rotatable magnetron sputtering cathode target and process for its production |
EP0486475B1 (en) * | 1988-03-03 | 1997-12-03 | Asahi Glass Company Ltd. | Amorphous oxide film and article having such film thereon |
AU616736B2 (en) * | 1988-03-03 | 1991-11-07 | Asahi Glass Company Limited | Amorphous oxide film and article having such film thereon |
JP4926377B2 (ja) * | 2004-03-05 | 2012-05-09 | 新日鉄マテリアルズ株式会社 | シリコンの精錬装置及びその精錬方法 |
BRPI0814309A2 (pt) * | 2007-08-01 | 2015-02-03 | Boston Silicon Materials Llc | Processo para a produção de silíco elementar de pureza elevada |
JP5142211B2 (ja) * | 2008-10-02 | 2013-02-13 | 国立大学法人東北大学 | シリコン結晶の製造方法および太陽電池膜の製造方法 |
WO2012158600A1 (en) * | 2011-05-16 | 2012-11-22 | Boston Silicon Materials, Llc | Manufacturing and applications of silicon metal |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3041145A (en) * | 1957-07-15 | 1962-06-26 | Robert S Aries | Production of pure silicon |
US2912311A (en) * | 1957-11-20 | 1959-11-10 | Allied Chem | Apparatus for production of high purity elemental silicon |
US4102765A (en) * | 1977-01-06 | 1978-07-25 | Westinghouse Electric Corp. | Arc heater production of silicon involving alkali or alkaline-earth metals |
US4102767A (en) * | 1977-04-14 | 1978-07-25 | Westinghouse Electric Corp. | Arc heater method for the production of single crystal silicon |
US4150248A (en) * | 1978-03-09 | 1979-04-17 | Westinghouse Electric Corp. | Arc heater with silicon lined reactor |
US4188368A (en) * | 1978-03-29 | 1980-02-12 | Nasa | Method of producing silicon |
-
1981
- 1981-07-13 CA CA000381604A patent/CA1198581A/en not_active Expired
- 1981-10-08 AU AU76167/81A patent/AU7616781A/en not_active Abandoned
- 1981-10-15 DE DE8181108384T patent/DE3175801D1/de not_active Expired
- 1981-10-15 EP EP19810108384 patent/EP0050324B1/en not_active Expired
- 1981-10-16 ES ES506319A patent/ES506319A0/es active Granted
- 1981-10-19 DK DK460981A patent/DK460981A/da not_active Application Discontinuation
- 1981-10-20 JP JP16782781A patent/JPS57100912A/ja active Granted
-
1982
- 1982-08-30 ES ES515367A patent/ES8306678A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
AU7616781A (en) | 1982-04-29 |
ES515367A0 (es) | 1983-06-01 |
ES8301837A1 (es) | 1983-01-01 |
EP0050324A1 (en) | 1982-04-28 |
CA1198581A (en) | 1985-12-31 |
DE3175801D1 (en) | 1987-02-12 |
EP0050324B1 (en) | 1987-01-07 |
DK460981A (da) | 1982-04-21 |
JPS57100912A (en) | 1982-06-23 |
JPH0131451B2 (es) | 1989-06-26 |
ES8306678A1 (es) | 1983-06-01 |
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