BRPI0814309A2 - Processo para a produção de silíco elementar de pureza elevada - Google Patents
Processo para a produção de silíco elementar de pureza elevadaInfo
- Publication number
- BRPI0814309A2 BRPI0814309A2 BRPI0814309-9A2A BRPI0814309A BRPI0814309A2 BR PI0814309 A2 BRPI0814309 A2 BR PI0814309A2 BR PI0814309 A BRPI0814309 A BR PI0814309A BR PI0814309 A2 BRPI0814309 A2 BR PI0814309A2
- Authority
- BR
- Brazil
- Prior art keywords
- elementary
- silicone
- production
- high purity
- purity
- Prior art date
Links
- 229920001296 polysiloxane Polymers 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/033—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US95345007P | 2007-08-01 | 2007-08-01 | |
PCT/US2008/071729 WO2009018425A1 (en) | 2007-08-01 | 2008-07-31 | Process for the production of high purity elemental silicon |
Publications (1)
Publication Number | Publication Date |
---|---|
BRPI0814309A2 true BRPI0814309A2 (pt) | 2015-02-03 |
Family
ID=40304870
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BRPI0814309-9A2A BRPI0814309A2 (pt) | 2007-08-01 | 2008-07-31 | Processo para a produção de silíco elementar de pureza elevada |
Country Status (8)
Country | Link |
---|---|
US (1) | US20100154475A1 (pt) |
EP (1) | EP2173658A4 (pt) |
JP (1) | JP2010535149A (pt) |
CN (1) | CN101801847A (pt) |
AU (1) | AU2008282166A1 (pt) |
BR (1) | BRPI0814309A2 (pt) |
RU (1) | RU2451635C2 (pt) |
WO (1) | WO2009018425A1 (pt) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010107850A1 (en) * | 2009-03-20 | 2010-09-23 | Boston Silicon Materials Llc | Method for the manufacture of photovoltaic grade silicon metal |
WO2011009017A2 (en) * | 2009-07-17 | 2011-01-20 | Boston Silicon Materials Llc | Process for the formation of silicon metal sheets |
CN103702937A (zh) * | 2011-05-16 | 2014-04-02 | 波士顿硅材料有限公司 | 金属硅的生产和应用 |
ES2592814T3 (es) | 2011-08-26 | 2016-12-01 | Consarc Corporation | Purificación de un metaloide mediante proceso de refundición por arco en vacío de electrodo consumible |
CN102923747A (zh) * | 2012-11-28 | 2013-02-13 | 东北大学 | 一种利用煤矸石生产氯化铝、氯化硅和氯化铁的方法 |
WO2015006557A1 (en) * | 2013-07-10 | 2015-01-15 | The Penn State Research Foundation | Mesoporous silicon synthesis and applications in li-ion batteries and solar hydrogen fuel cells |
CN108622882B (zh) * | 2017-03-18 | 2022-02-18 | 深圳格林德能源集团有限公司 | 一种石墨烯的液相共沉积制备方法 |
MX2019013275A (es) | 2017-05-12 | 2020-07-27 | Enanta Pharm Inc | Inhibidores de la quinasa 1 reguladora de la señal de apoptosis y métodos de uso de estos. |
RU2729691C2 (ru) * | 2018-12-05 | 2020-08-11 | ООО "Современные химические и металлургические технологии" (ООО "СХИМТ") | Способ алюмотермического получения металлических порошков и устройство для его осуществления |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1858100A (en) * | 1928-07-23 | 1932-05-10 | Internat Silica Corp | Process of treating silica-bearing materials |
DE1030816B (de) * | 1953-11-10 | 1958-05-29 | Siemens Ag | Verfahren und Vorrichtung zur Herstellung reinsten Siliziums oder Germaniums oder anderer Halbleiterstoffe |
NL101577C (pt) * | 1957-12-31 | 1900-01-01 | ||
US4102767A (en) * | 1977-04-14 | 1978-07-25 | Westinghouse Electric Corp. | Arc heater method for the production of single crystal silicon |
US4150248A (en) * | 1978-03-09 | 1979-04-17 | Westinghouse Electric Corp. | Arc heater with silicon lined reactor |
US4188368A (en) * | 1978-03-29 | 1980-02-12 | Nasa | Method of producing silicon |
US4237103A (en) * | 1978-06-29 | 1980-12-02 | Combustion Engineering, Inc. | Method for disposal of sodium waste material |
US4239740A (en) * | 1979-05-25 | 1980-12-16 | Westinghouse Electric Corp. | Production of high purity silicon by a heterogeneous arc heater reduction |
CA1198581A (en) * | 1980-10-20 | 1985-12-31 | Robert K. Gould | Method and apparatus for producing high purity silicon from flames of sodium and silicon tetrachloride |
US5021221A (en) * | 1980-10-20 | 1991-06-04 | Aero Chem Research Lab., Inc. | Apparatus for producing high purity silicon from flames of sodium and silicon tetrachloride |
US4446120A (en) * | 1982-01-29 | 1984-05-01 | The United States Of America As Represented By The United States Department Of Energy | Method of preparing silicon from sodium fluosilicate |
US4590043A (en) * | 1982-12-27 | 1986-05-20 | Sri International | Apparatus for obtaining silicon from fluosilicic acid |
US4781565A (en) * | 1982-12-27 | 1988-11-01 | Sri International | Apparatus for obtaining silicon from fluosilicic acid |
US4748014A (en) * | 1982-12-27 | 1988-05-31 | Sri International | Process and apparatus for obtaining silicon from fluosilicic acid |
FI72952C (fi) * | 1985-03-11 | 1987-08-10 | Kemira Oy | Foerfarande foer framstaellning av kisel. |
US4676968A (en) * | 1985-07-24 | 1987-06-30 | Enichem, S.P.A. | Melt consolidation of silicon powder |
JP3844856B2 (ja) * | 1997-09-11 | 2006-11-15 | 住友チタニウム株式会社 | 高純度シリコンの製造方法 |
JP3218016B2 (ja) * | 1998-09-17 | 2001-10-15 | 日本碍子株式会社 | 高純度シリコン及び高純度チタンの製造法 |
RU2181104C2 (ru) * | 2000-02-03 | 2002-04-10 | Государственное унитарное предприятие Государственный научный центр Российской Федерации Физико-энергетический институт имени академика А.И. Лейпунского | Способ выделения кремния |
ES2258216T3 (es) * | 2002-01-18 | 2006-08-16 | Power Avenue | Procedimiento para la fabricacion de silicio. |
US20050053540A1 (en) * | 2002-01-18 | 2005-03-10 | Norbert Auner | Method for producing amorphous silicon and/or organohalosilanes produced therefrom |
WO2007077957A1 (ja) * | 2005-12-27 | 2007-07-12 | Sumitomo Chemical Company, Limited | 多結晶シリコンの製造方法 |
-
2008
- 2008-07-31 AU AU2008282166A patent/AU2008282166A1/en not_active Abandoned
- 2008-07-31 JP JP2010520183A patent/JP2010535149A/ja active Pending
- 2008-07-31 RU RU2010107275/05A patent/RU2451635C2/ru not_active IP Right Cessation
- 2008-07-31 CN CN200880101278A patent/CN101801847A/zh active Pending
- 2008-07-31 WO PCT/US2008/071729 patent/WO2009018425A1/en active Application Filing
- 2008-07-31 EP EP08782558A patent/EP2173658A4/en not_active Withdrawn
- 2008-07-31 BR BRPI0814309-9A2A patent/BRPI0814309A2/pt not_active IP Right Cessation
-
2010
- 2010-01-28 US US12/695,360 patent/US20100154475A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20100154475A1 (en) | 2010-06-24 |
EP2173658A4 (en) | 2012-10-03 |
EP2173658A1 (en) | 2010-04-14 |
JP2010535149A (ja) | 2010-11-18 |
WO2009018425A1 (en) | 2009-02-05 |
RU2451635C2 (ru) | 2012-05-27 |
CN101801847A (zh) | 2010-08-11 |
RU2010107275A (ru) | 2011-09-10 |
AU2008282166A1 (en) | 2009-02-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
B08F | Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette] |
Free format text: REFERENTE AS 6A E 7A ANUIDADES. |
|
B08K | Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette] |
Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2343 DE 01-12-2015 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013. |