KR101768786B1 - 반도체 장치 및 반도체 장치의 제조 방법 - Google Patents

반도체 장치 및 반도체 장치의 제조 방법 Download PDF

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KR101768786B1
KR101768786B1 KR1020157016907A KR20157016907A KR101768786B1 KR 101768786 B1 KR101768786 B1 KR 101768786B1 KR 1020157016907 A KR1020157016907 A KR 1020157016907A KR 20157016907 A KR20157016907 A KR 20157016907A KR 101768786 B1 KR101768786 B1 KR 101768786B1
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layer
thin film
transistor
oxide semiconductor
film transistor
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KR20150080028A (ko
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？뻬이 야마자끼
šœ뻬이 야마자끼
준이찌로 사까따
히로유끼 미야께
히데아끼 쿠와바라
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H01L27/1214—
    • H01L27/1225—
    • H01L27/1262—
    • H01L29/45—
    • H01L29/78606—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Shift Register Type Memory (AREA)
KR1020157016907A 2009-07-18 2010-06-25 반도체 장치 및 반도체 장치의 제조 방법 Active KR101768786B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009169601 2009-07-18
JPJP-P-2009-169601 2009-07-18
PCT/JP2010/061303 WO2011010544A1 (en) 2009-07-18 2010-06-25 Semiconductor device and method for manufacturing semiconductor device

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KR1020127004242A Division KR101870460B1 (ko) 2009-07-18 2010-06-25 반도체 장치 및 반도체 장치의 제조 방법

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KR20150080028A KR20150080028A (ko) 2015-07-08
KR101768786B1 true KR101768786B1 (ko) 2017-08-16

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KR1020187016946A Active KR101929726B1 (ko) 2009-07-18 2010-06-25 반도체 장치 및 반도체 장치의 제조 방법
KR1020127004242A Active KR101870460B1 (ko) 2009-07-18 2010-06-25 반도체 장치 및 반도체 장치의 제조 방법

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KR1020127004242A Active KR101870460B1 (ko) 2009-07-18 2010-06-25 반도체 장치 및 반도체 장치의 제조 방법

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US (3) US8729550B2 (enExample)
JP (10) JP5145381B2 (enExample)
KR (3) KR101768786B1 (enExample)
CN (2) CN102473733B (enExample)
TW (1) TWI559499B (enExample)
WO (1) WO2011010544A1 (enExample)

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WO2011010542A1 (en) * 2009-07-23 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
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JP2023153828A (ja) 2023-10-18
TW201133786A (en) 2011-10-01
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KR101870460B1 (ko) 2018-06-22
JP5683049B2 (ja) 2015-03-11
JP2025172781A (ja) 2025-11-26
JP2013084964A (ja) 2013-05-09
US20140209902A1 (en) 2014-07-31
JP7731493B2 (ja) 2025-08-29
KR101929726B1 (ko) 2018-12-14
JP2015130511A (ja) 2015-07-16
WO2011010544A1 (en) 2011-01-27
JP6585778B2 (ja) 2019-10-02
TWI559499B (zh) 2016-11-21
US8987048B2 (en) 2015-03-24
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CN105070749A (zh) 2015-11-18
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CN102473733A (zh) 2012-05-23
US8729550B2 (en) 2014-05-20
KR20180071402A (ko) 2018-06-27
JP2022003693A (ja) 2022-01-11
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CN102473733B (zh) 2015-09-30
US20150155304A1 (en) 2015-06-04
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