JPH10104663A - 電気光学装置およびその作製方法 - Google Patents
電気光学装置およびその作製方法Info
- Publication number
- JPH10104663A JPH10104663A JP8277486A JP27748696A JPH10104663A JP H10104663 A JPH10104663 A JP H10104663A JP 8277486 A JP8277486 A JP 8277486A JP 27748696 A JP27748696 A JP 27748696A JP H10104663 A JPH10104663 A JP H10104663A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- electro
- optical device
- pixel
- pixel matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000015572 biosynthetic process Effects 0.000 title description 7
- 239000011159 matrix material Substances 0.000 claims abstract description 111
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 239000004973 liquid crystal related substance Substances 0.000 claims description 39
- 239000010410 layer Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 230000006870 function Effects 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 6
- 230000010355 oscillation Effects 0.000 claims description 4
- 230000010365 information processing Effects 0.000 claims description 3
- 239000011521 glass Substances 0.000 abstract description 21
- 239000010408 film Substances 0.000 description 69
- 239000011229 interlayer Substances 0.000 description 22
- 239000000463 material Substances 0.000 description 19
- 239000010407 anodic oxide Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 230000005684 electric field Effects 0.000 description 8
- 229920001721 polyimide Polymers 0.000 description 8
- 239000004642 Polyimide Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 230000010287 polarization Effects 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000013532 laser treatment Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- IUOOGQJPAJDLFV-UHFFFAOYSA-N 2,3-dihydroxybutanedioic acid;ethane-1,2-diol Chemical compound OCCO.OC(=O)C(O)C(O)C(O)=O IUOOGQJPAJDLFV-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000004815 dispersion polymer Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000009958 sewing Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0404—Matrix technologies
- G09G2300/0408—Integration of the drivers onto the display substrate
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8277486A JPH10104663A (ja) | 1996-09-27 | 1996-09-27 | 電気光学装置およびその作製方法 |
| US08/937,377 US6384818B1 (en) | 1996-09-27 | 1997-09-25 | Electrooptical device and method of fabricating the same |
| KR1019970049343A KR19980025065A (ko) | 1996-09-27 | 1997-09-27 | 전기 광학 장치 및 그의 제조방법 |
| US10/079,766 US6765562B2 (en) | 1996-09-27 | 2002-02-19 | Electrooptical device and method of fabricating the same |
| KR1020020057723A KR100624158B1 (ko) | 1996-09-27 | 2002-09-24 | 개인 통신장치 |
| US10/891,015 US7268777B2 (en) | 1996-09-27 | 2004-07-15 | Electrooptical device and method of fabricating the same |
| US10/978,382 US7532208B2 (en) | 1996-09-27 | 2004-11-02 | Electrooptical device and method of fabricating the same |
| US10/998,014 US7489291B2 (en) | 1996-09-27 | 2004-11-29 | Electrooptical device and method of fabricating the same |
| US12/421,361 US8564575B2 (en) | 1996-09-27 | 2009-04-09 | Electrooptical device and method of fabricating the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8277486A JPH10104663A (ja) | 1996-09-27 | 1996-09-27 | 電気光学装置およびその作製方法 |
Related Child Applications (6)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004321688A Division JP2005115392A (ja) | 2004-11-05 | 2004-11-05 | アクティブマトリクス型ｅｌ表示装置 |
| JP2004321725A Division JP2005115393A (ja) | 2004-11-05 | 2004-11-05 | 液晶表示装置 |
| JP2004323292A Division JP2005072616A (ja) | 2004-11-08 | 2004-11-08 | 電気光学装置 |
| JP2005233069A Division JP2006085161A (ja) | 2005-08-11 | 2005-08-11 | 反射型電気光学装置、反射型の液晶表示装置およびｅｌ表示装置 |
| JP2006160829A Division JP4367859B2 (ja) | 2006-06-09 | 2006-06-09 | 電気光学装置 |
| JP2006160566A Division JP4142695B2 (ja) | 2006-06-09 | 2006-06-09 | 液晶表示装置及び電気光学装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10104663A true JPH10104663A (ja) | 1998-04-24 |
| JPH10104663A5 JPH10104663A5 (enExample) | 2004-10-07 |
Family
ID=17584273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8277486A Withdrawn JPH10104663A (ja) | 1996-09-27 | 1996-09-27 | 電気光学装置およびその作製方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (6) | US6384818B1 (enExample) |
| JP (1) | JPH10104663A (enExample) |
| KR (2) | KR19980025065A (enExample) |
Cited By (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000002890A (ja) * | 1998-06-17 | 2000-01-07 | Semiconductor Energy Lab Co Ltd | 反射型半導体表示装置 |
| JP2000315734A (ja) * | 1999-03-03 | 2000-11-14 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2001076868A (ja) * | 1999-06-28 | 2001-03-23 | Semiconductor Energy Lab Co Ltd | Ｅｌ表示装置及び電子装置 |
| JP2001313397A (ja) * | 2000-02-22 | 2001-11-09 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US6380687B1 (en) | 1999-06-28 | 2002-04-30 | Semiconductor Energy Laboratory Co., Ltd. | EL display device and electric device |
| US6384818B1 (en) | 1996-09-27 | 2002-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Electrooptical device and method of fabricating the same |
| JP2002277900A (ja) * | 2000-12-25 | 2002-09-25 | Kawasaki Microelectronics Kk | 液晶表示装置および表示システム |
| JP2003344876A (ja) * | 2002-03-19 | 2003-12-03 | Seiko Epson Corp | 液晶表示装置、電気光学装置とその製造方法、電子機器 |
| JP2004133147A (ja) * | 2002-10-10 | 2004-04-30 | Victor Co Of Japan Ltd | 液晶表示装置 |
| JP2005500570A (ja) * | 2001-08-17 | 2005-01-06 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 能動マトリックス液晶ディスプレイ |
| JP2005115392A (ja) * | 2004-11-05 | 2005-04-28 | Semiconductor Energy Lab Co Ltd | アクティブマトリクス型ｅｌ表示装置 |
| JP2006031032A (ja) * | 1999-01-08 | 2006-02-02 | Semiconductor Energy Lab Co Ltd | 半導体表示装置およびその駆動回路 |
| JP2006215575A (ja) * | 1999-03-26 | 2006-08-17 | Semiconductor Energy Lab Co Ltd | 液晶表示装置及び半導体装置 |
| JP2006260954A (ja) * | 2005-03-17 | 2006-09-28 | Casio Comput Co Ltd | 配線及びそのパターニング方法並びにディスプレイ及びその製造方法 |
| JP2007095706A (ja) * | 2006-11-20 | 2007-04-12 | Seiko Epson Corp | 発光装置 |
| WO2008123097A1 (ja) | 2007-03-20 | 2008-10-16 | Toray Industries, Inc. | 黒色樹脂組成物、樹脂ブラックマトリクス、カラーフィルターおよび液晶表示装置 |
| JP2009524910A (ja) * | 2006-01-27 | 2009-07-02 | イーストマン コダック カンパニー | 電力分布が改善されたｅｌデバイス |
| US7582900B2 (en) | 2006-02-28 | 2009-09-01 | Mitsubishi Electric Corporation | Array substrate for an image display device |
| US7605786B2 (en) | 1999-03-26 | 2009-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US7851797B2 (en) | 1999-12-14 | 2010-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device including a color filter or color filters over a pixel portion and a driving circuit for driving the pixel portion |
| JP2011181938A (ja) * | 1999-03-03 | 2011-09-15 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| JP2013057959A (ja) * | 2000-04-27 | 2013-03-28 | Semiconductor Energy Lab Co Ltd | Ｅｌ表示装置、及び電子機器 |
| JP2014078033A (ja) * | 2013-12-23 | 2014-05-01 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| US8847316B2 (en) | 1999-03-02 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| WO2015163306A1 (ja) * | 2014-04-22 | 2015-10-29 | シャープ株式会社 | アクティブマトリクス基板、及びそれを備えた表示装置 |
| JP2016012152A (ja) * | 2015-10-20 | 2016-01-21 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP2016048686A (ja) * | 1999-02-23 | 2016-04-07 | 株式会社半導体エネルギー研究所 | Ｅｌ表示装置 |
| WO2016080237A1 (ja) * | 2014-11-17 | 2016-05-26 | シャープ株式会社 | 液晶表示装置 |
| JP2017037341A (ja) * | 2016-10-27 | 2017-02-16 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US9704996B2 (en) | 2000-04-12 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2018139313A (ja) * | 2018-05-09 | 2018-09-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2019075572A (ja) * | 2018-12-18 | 2019-05-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JPWO2020229917A1 (enExample) * | 2019-05-10 | 2020-11-19 | ||
| WO2021028750A1 (ja) * | 2019-08-09 | 2021-02-18 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
Families Citing this family (58)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6262438B1 (en) * | 1996-11-04 | 2001-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix type display circuit and method of manufacturing the same |
| JPH10198292A (ja) | 1996-12-30 | 1998-07-31 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
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| TW319912B (enExample) | 1995-12-15 | 1997-11-11 | Handotai Energy Kenkyusho Kk | |
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-
1996
- 1996-09-27 JP JP8277486A patent/JPH10104663A/ja not_active Withdrawn
-
1997
- 1997-09-25 US US08/937,377 patent/US6384818B1/en not_active Expired - Lifetime
- 1997-09-27 KR KR1019970049343A patent/KR19980025065A/ko not_active Ceased
-
2002
- 2002-02-19 US US10/079,766 patent/US6765562B2/en not_active Expired - Lifetime
- 2002-09-24 KR KR1020020057723A patent/KR100624158B1/ko not_active Expired - Fee Related
-
2004
- 2004-07-15 US US10/891,015 patent/US7268777B2/en not_active Expired - Fee Related
- 2004-11-02 US US10/978,382 patent/US7532208B2/en not_active Expired - Fee Related
- 2004-11-29 US US10/998,014 patent/US7489291B2/en not_active Expired - Fee Related
-
2009
- 2009-04-09 US US12/421,361 patent/US8564575B2/en not_active Expired - Fee Related
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Also Published As
| Publication number | Publication date |
|---|---|
| US20050093852A1 (en) | 2005-05-05 |
| US20020089483A1 (en) | 2002-07-11 |
| KR100624158B1 (ko) | 2006-09-18 |
| US7489291B2 (en) | 2009-02-10 |
| KR19980025065A (ko) | 1998-07-06 |
| US6384818B1 (en) | 2002-05-07 |
| US20050088433A1 (en) | 2005-04-28 |
| US6765562B2 (en) | 2004-07-20 |
| US7268777B2 (en) | 2007-09-11 |
| US8564575B2 (en) | 2013-10-22 |
| US20040257357A1 (en) | 2004-12-23 |
| US20090195523A1 (en) | 2009-08-06 |
| US7532208B2 (en) | 2009-05-12 |
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