KR19980025065A - 전기 광학 장치 및 그의 제조방법 - Google Patents
전기 광학 장치 및 그의 제조방법 Download PDFInfo
- Publication number
- KR19980025065A KR19980025065A KR1019970049343A KR19970049343A KR19980025065A KR 19980025065 A KR19980025065 A KR 19980025065A KR 1019970049343 A KR1019970049343 A KR 1019970049343A KR 19970049343 A KR19970049343 A KR 19970049343A KR 19980025065 A KR19980025065 A KR 19980025065A
- Authority
- KR
- South Korea
- Prior art keywords
- circuit
- electro
- pixel
- optical device
- logic circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000011159 matrix material Substances 0.000 claims abstract description 111
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 239000010410 layer Substances 0.000 claims description 41
- 239000004973 liquid crystal related substance Substances 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 27
- 238000012545 processing Methods 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 238000012937 correction Methods 0.000 claims description 5
- 230000010365 information processing Effects 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 56
- 239000011229 interlayer Substances 0.000 description 21
- 239000011521 glass Substances 0.000 description 17
- 239000010407 anodic oxide Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 239000004642 Polyimide Substances 0.000 description 7
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- 150000002500 ions Chemical class 0.000 description 6
- 230000010287 polarization Effects 0.000 description 6
- 239000003792 electrolyte Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
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- 238000002425 crystallisation Methods 0.000 description 3
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- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- 238000013532 laser treatment Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 230000011664 signaling Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- 235000002906 tartaric acid Nutrition 0.000 description 2
- 239000011975 tartaric acid Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012260 resinous material Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0404—Matrix technologies
- G09G2300/0408—Integration of the drivers onto the display substrate
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8-277486 | 1996-09-27 | ||
| JP8277486A JPH10104663A (ja) | 1996-09-27 | 1996-09-27 | 電気光学装置およびその作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020020057723A Division KR100624158B1 (ko) | 1996-09-27 | 2002-09-24 | 개인 통신장치 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR19980025065A true KR19980025065A (ko) | 1998-07-06 |
Family
ID=17584273
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019970049343A Ceased KR19980025065A (ko) | 1996-09-27 | 1997-09-27 | 전기 광학 장치 및 그의 제조방법 |
| KR1020020057723A Expired - Fee Related KR100624158B1 (ko) | 1996-09-27 | 2002-09-24 | 개인 통신장치 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020020057723A Expired - Fee Related KR100624158B1 (ko) | 1996-09-27 | 2002-09-24 | 개인 통신장치 |
Country Status (3)
| Country | Link |
|---|---|
| US (6) | US6384818B1 (enExample) |
| JP (1) | JPH10104663A (enExample) |
| KR (2) | KR19980025065A (enExample) |
Families Citing this family (92)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10104663A (ja) | 1996-09-27 | 1998-04-24 | Semiconductor Energy Lab Co Ltd | 電気光学装置およびその作製方法 |
| US6262438B1 (en) * | 1996-11-04 | 2001-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix type display circuit and method of manufacturing the same |
| JPH10198292A (ja) | 1996-12-30 | 1998-07-31 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US6291837B1 (en) * | 1997-03-18 | 2001-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Substrate of semiconductor device and fabrication method thereof as well as semiconductor device and fabrication method thereof |
| JP4053136B2 (ja) | 1998-06-17 | 2008-02-27 | 株式会社半導体エネルギー研究所 | 反射型半導体表示装置 |
| JP2000081848A (ja) * | 1998-09-03 | 2000-03-21 | Semiconductor Energy Lab Co Ltd | 液晶表示装置を搭載した電子機器 |
| JP2006031032A (ja) * | 1999-01-08 | 2006-02-02 | Semiconductor Energy Lab Co Ltd | 半導体表示装置およびその駆動回路 |
| JP4372943B2 (ja) | 1999-02-23 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| US7821065B2 (en) * | 1999-03-02 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same |
| JP4860026B2 (ja) * | 1999-03-03 | 2012-01-25 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US6677613B1 (en) * | 1999-03-03 | 2004-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
| JP4283281B2 (ja) * | 1999-03-26 | 2009-06-24 | 株式会社半導体エネルギー研究所 | 液晶表示装置及び半導体装置 |
| US7145536B1 (en) | 1999-03-26 | 2006-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US6861670B1 (en) * | 1999-04-01 | 2005-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having multi-layer wiring |
| US8853696B1 (en) * | 1999-06-04 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and electronic device |
| JP4666722B2 (ja) * | 1999-06-28 | 2011-04-06 | 株式会社半導体エネルギー研究所 | Ｅｌ表示装置及び電子装置 |
| TW515109B (en) | 1999-06-28 | 2002-12-21 | Semiconductor Energy Lab | EL display device and electronic device |
| JP2001053283A (ja) | 1999-08-12 | 2001-02-23 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| JP2001175198A (ja) | 1999-12-14 | 2001-06-29 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US7023021B2 (en) | 2000-02-22 | 2006-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| TW521303B (en) * | 2000-02-28 | 2003-02-21 | Semiconductor Energy Lab | Electronic device |
| JP4118484B2 (ja) | 2000-03-06 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2001257350A (ja) * | 2000-03-08 | 2001-09-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP4700160B2 (ja) | 2000-03-13 | 2011-06-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP4118485B2 (ja) * | 2000-03-13 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4683688B2 (ja) * | 2000-03-16 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
| JP4393662B2 (ja) | 2000-03-17 | 2010-01-06 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
| US6789910B2 (en) | 2000-04-12 | 2004-09-14 | Semiconductor Energy Laboratory, Co., Ltd. | Illumination apparatus |
| US6580475B2 (en) * | 2000-04-27 | 2003-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
| JP4785229B2 (ja) | 2000-05-09 | 2011-10-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US8130187B2 (en) * | 2000-07-19 | 2012-03-06 | Toshiba Matsushita Display Technology Co., Ltd. | OCB liquid crystal display with active matrix and supplemental capacitors and driving method for the same |
| US6992652B2 (en) * | 2000-08-08 | 2006-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and driving method thereof |
| TW522374B (en) * | 2000-08-08 | 2003-03-01 | Semiconductor Energy Lab | Electro-optical device and driving method of the same |
| US6828950B2 (en) * | 2000-08-10 | 2004-12-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of driving the same |
| US7180496B2 (en) * | 2000-08-18 | 2007-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method of driving the same |
| TW518552B (en) * | 2000-08-18 | 2003-01-21 | Semiconductor Energy Lab | Liquid crystal display device, method of driving the same, and method of driving a portable information device having the liquid crystal display device |
| US6987496B2 (en) * | 2000-08-18 | 2006-01-17 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device and method of driving the same |
| TW514854B (en) * | 2000-08-23 | 2002-12-21 | Semiconductor Energy Lab | Portable information apparatus and method of driving the same |
| US6509616B2 (en) * | 2000-09-29 | 2003-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
| US7184014B2 (en) * | 2000-10-05 | 2007-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| TW525216B (en) | 2000-12-11 | 2003-03-21 | Semiconductor Energy Lab | Semiconductor device, and manufacturing method thereof |
| SG111923A1 (en) | 2000-12-21 | 2005-06-29 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
| JP3998470B2 (ja) * | 2000-12-25 | 2007-10-24 | 川崎マイクロエレクトロニクス株式会社 | 液晶表示装置および表示システム |
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| TW309633B (enExample) | 1995-12-14 | 1997-07-01 | Handotai Energy Kenkyusho Kk | |
| TW319912B (enExample) | 1995-12-15 | 1997-11-11 | Handotai Energy Kenkyusho Kk | |
| US6204101B1 (en) | 1995-12-15 | 2001-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| KR100275544B1 (ko) * | 1995-12-20 | 2001-01-15 | 이계철 | 선택적 컬렉터 박막 성장을 이용한 초자기정렬 바이폴러 트랜지스터의 제조방법 |
| JP3865145B2 (ja) | 1996-01-26 | 2007-01-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US5986724A (en) * | 1996-03-01 | 1999-11-16 | Kabushiki Kaisha Toshiba | Liquid crystal display with liquid crystal layer and ferroelectric layer connected to drain of TFT |
| US6072454A (en) * | 1996-03-01 | 2000-06-06 | Kabushiki Kaisha Toshiba | Liquid crystal display device |
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| JP3587426B2 (ja) | 1996-09-25 | 2004-11-10 | シャープ株式会社 | 液晶表示装置及びその製造方法 |
| JPH10104663A (ja) * | 1996-09-27 | 1998-04-24 | Semiconductor Energy Lab Co Ltd | 電気光学装置およびその作製方法 |
| US5904053A (en) * | 1996-12-11 | 1999-05-18 | International Comfort Products | Drainage management system for refrigeration coil |
| JP3463971B2 (ja) | 1996-12-26 | 2003-11-05 | 出光興産株式会社 | 有機アクティブｅｌ発光装置 |
| TW379360B (en) | 1997-03-03 | 2000-01-11 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
| JP3032801B2 (ja) | 1997-03-03 | 2000-04-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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| US7145536B1 (en) * | 1999-03-26 | 2006-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
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1996
- 1996-09-27 JP JP8277486A patent/JPH10104663A/ja not_active Withdrawn
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1997
- 1997-09-25 US US08/937,377 patent/US6384818B1/en not_active Expired - Lifetime
- 1997-09-27 KR KR1019970049343A patent/KR19980025065A/ko not_active Ceased
-
2002
- 2002-02-19 US US10/079,766 patent/US6765562B2/en not_active Expired - Lifetime
- 2002-09-24 KR KR1020020057723A patent/KR100624158B1/ko not_active Expired - Fee Related
-
2004
- 2004-07-15 US US10/891,015 patent/US7268777B2/en not_active Expired - Fee Related
- 2004-11-02 US US10/978,382 patent/US7532208B2/en not_active Expired - Fee Related
- 2004-11-29 US US10/998,014 patent/US7489291B2/en not_active Expired - Fee Related
-
2009
- 2009-04-09 US US12/421,361 patent/US8564575B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06186578A (ja) * | 1992-12-17 | 1994-07-08 | Seiko Epson Corp | 液晶表示装置 |
| JPH06214254A (ja) * | 1993-01-14 | 1994-08-05 | Matsushita Electric Ind Co Ltd | 反射型薄膜トランジスタアレイ素子 |
| JPH06289413A (ja) * | 1993-04-06 | 1994-10-18 | Seiko Epson Corp | 液晶表示装置 |
| JPH0876088A (ja) * | 1994-09-08 | 1996-03-22 | Sharp Corp | 画像表示装置 |
| JPH08114817A (ja) * | 1994-10-14 | 1996-05-07 | Toshiba Corp | 液晶表示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20050093852A1 (en) | 2005-05-05 |
| US20020089483A1 (en) | 2002-07-11 |
| KR100624158B1 (ko) | 2006-09-18 |
| US7489291B2 (en) | 2009-02-10 |
| US6384818B1 (en) | 2002-05-07 |
| JPH10104663A (ja) | 1998-04-24 |
| US20050088433A1 (en) | 2005-04-28 |
| US6765562B2 (en) | 2004-07-20 |
| US7268777B2 (en) | 2007-09-11 |
| US8564575B2 (en) | 2013-10-22 |
| US20040257357A1 (en) | 2004-12-23 |
| US20090195523A1 (en) | 2009-08-06 |
| US7532208B2 (en) | 2009-05-12 |
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