JP7114681B2 - 半導体基板に応力を加える装置 - Google Patents
半導体基板に応力を加える装置 Download PDFInfo
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- JP7114681B2 JP7114681B2 JP2020203209A JP2020203209A JP7114681B2 JP 7114681 B2 JP7114681 B2 JP 7114681B2 JP 2020203209 A JP2020203209 A JP 2020203209A JP 2020203209 A JP2020203209 A JP 2020203209A JP 7114681 B2 JP7114681 B2 JP 7114681B2
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- 239000000758 substrate Substances 0.000 title claims description 245
- 239000004065 semiconductor Substances 0.000 title claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 15
- 238000005452 bending Methods 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 239000011253 protective coating Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 238000003825 pressing Methods 0.000 description 5
- 230000033001 locomotion Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Semiconductor Lasers (AREA)
Description
Claims (6)
- 半導体基板を曲げるための装置であって、この基板は表面、裏面、および周縁を有し、基板は、ほぼ平坦な位置と曲げ位置との間で移動可能であり、この装置は、
チャンバと、
チャンバを加熱するためのヒータと、
基板の上に応力を加えるために十分な、基板を横切る差圧を形成するための圧力変調器と、
チャンバ中に配置された基板ホルダーと
を備え、
このホルダーは、
第1のサポートであって、第1のサポートは、凹形状であり、そこを通る複数の孔を有し、圧力変調器が孔を通って真空に引くように適用され、これにより基板を第1のサポートに引っ張る第1のサポートと、
第1のサポートに対向する第2のサポートであって、第2のサポートは、キャビティとベントを含み、第2のサポートは、基板の面の1つに接触するように取り付けられて、キャビティとベントは、基板上に応力を加えるために、それらを通って真空に引くことが可能である第2のサポートと
を含むことを特徴とする装置。 - 第1のサポートは、その平坦な位置に基板の一部を接触させるための上部部分を含み、基板が曲げ位置にある場合、基板の比較的大きな部分が、第1のサポートに接触することを特徴とする請求項1に記載の装置。
- 第2のサポートは、凹形状である請求項1に記載の装置。
- 第2のサポートは、基板の周縁の近傍のみで基板に接触するように取り付けられる請求項1に記載の装置。
- 基板と組み合わせて、基板は周縁に隣接して配置された保護コーティングを含むことを特徴とする請求項1~4のいずれかに記載の装置。
- チャンバは、エピタキシャル層を形成するためのエピタキシャルチャンバであることを特徴とする請求項1~5のいずれかに記載の装置。
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JP2022119435A JP2022166859A (ja) | 2012-12-31 | 2022-07-27 | 半導体基板に応力を加える装置 |
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---|---|---|---|
US201261747613P | 2012-12-31 | 2012-12-31 | |
US61/747,613 | 2012-12-31 | ||
US201361788744P | 2013-03-15 | 2013-03-15 | |
US201361793999P | 2013-03-15 | 2013-03-15 | |
US201361790445P | 2013-03-15 | 2013-03-15 | |
US61/793,999 | 2013-03-15 | ||
US61/788,744 | 2013-03-15 | ||
US61/790,445 | 2013-03-15 |
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JP2020187362A Division JP7082654B2 (ja) | 2012-12-31 | 2020-11-10 | 半導体基板に応力を加える装置 |
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JP2022119435A Division JP2022166859A (ja) | 2012-12-31 | 2022-07-27 | 半導体基板に応力を加える装置 |
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JP2021052198A JP2021052198A (ja) | 2021-04-01 |
JP7114681B2 true JP7114681B2 (ja) | 2022-08-08 |
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JP2015550832A Active JP6314153B2 (ja) | 2012-12-31 | 2013-12-30 | 半径方向の拡張により歪が低減されたヘテロ構造を準備するプロセスおよび装置 |
JP2015550846A Active JP6314154B2 (ja) | 2012-12-31 | 2013-12-30 | 半導体基板に応力を加える装置 |
JP2015550841A Active JP6373868B2 (ja) | 2012-12-31 | 2013-12-30 | 半径方向の圧縮により歪が低減されたヘテロ構造を準備するプロセスおよび装置 |
JP2018023318A Active JP6545842B2 (ja) | 2012-12-31 | 2018-02-13 | 半径方向の拡張により歪が低減されたヘテロ構造を準備するプロセスおよび装置 |
JP2018023957A Active JP6837019B2 (ja) | 2012-12-31 | 2018-02-14 | 半導体基板に応力を加える装置 |
JP2019092835A Active JP6814841B2 (ja) | 2012-12-31 | 2019-05-16 | 半導体基板に応力を加える装置 |
JP2019113987A Active JP6861242B2 (ja) | 2012-12-31 | 2019-06-19 | 半径方向の拡張により歪が低減されたヘテロ構造を準備するプロセスおよび装置 |
JP2020187362A Active JP7082654B2 (ja) | 2012-12-31 | 2020-11-10 | 半導体基板に応力を加える装置 |
JP2020203209A Active JP7114681B2 (ja) | 2012-12-31 | 2020-12-08 | 半導体基板に応力を加える装置 |
JP2022119435A Pending JP2022166859A (ja) | 2012-12-31 | 2022-07-27 | 半導体基板に応力を加える装置 |
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JP2015550846A Active JP6314154B2 (ja) | 2012-12-31 | 2013-12-30 | 半導体基板に応力を加える装置 |
JP2015550841A Active JP6373868B2 (ja) | 2012-12-31 | 2013-12-30 | 半径方向の圧縮により歪が低減されたヘテロ構造を準備するプロセスおよび装置 |
JP2018023318A Active JP6545842B2 (ja) | 2012-12-31 | 2018-02-13 | 半径方向の拡張により歪が低減されたヘテロ構造を準備するプロセスおよび装置 |
JP2018023957A Active JP6837019B2 (ja) | 2012-12-31 | 2018-02-14 | 半導体基板に応力を加える装置 |
JP2019092835A Active JP6814841B2 (ja) | 2012-12-31 | 2019-05-16 | 半導体基板に応力を加える装置 |
JP2019113987A Active JP6861242B2 (ja) | 2012-12-31 | 2019-06-19 | 半径方向の拡張により歪が低減されたヘテロ構造を準備するプロセスおよび装置 |
JP2020187362A Active JP7082654B2 (ja) | 2012-12-31 | 2020-11-10 | 半導体基板に応力を加える装置 |
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US (7) | US10361097B2 (ja) |
EP (6) | EP3185278B1 (ja) |
JP (10) | JP6314153B2 (ja) |
KR (2) | KR102224422B1 (ja) |
CN (5) | CN105144341B (ja) |
TW (4) | TWI673865B (ja) |
WO (3) | WO2014106190A2 (ja) |
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