JP2010530645A - スループットを改善しウェハダメージを低減するサセプタ - Google Patents
スループットを改善しウェハダメージを低減するサセプタ Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 51
- 230000002093 peripheral effect Effects 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000005137 deposition process Methods 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
Abstract
Description
Claims (32)
- 内部スペースを有する加熱されたチャンバー内において、半導体ウェハを支持するサセプタであって、
当該半導体ウェハは、フロント面、該フロント面と反対のバック面、上記フロント面および上記バック面の外周に延在する外周側面を有し、
当該サセプタは、半導体ウェハをチャンバーの内部スペースに受容し支持することができる大きさおよび形状に形成され、
当該サセプタは、
上面と、当該上面と反対の下面と、を有する本体と、
当該上面から当該本体に仮想の中央軸に沿って下方に延び、半導体ウェハを受容することができる大きさおよび形状に形成された凹部と、
上記本体を貫通し上記凹部から下面まで延びる複数のリフトピン開口部と、を有し、複数のリフトピン開口部のそれぞれは、ウェハを凹部に対して選択的に上昇または下降させるため、リフトピンを受容することができる大きさに形成され、
さらに、当該サセプタは、上記本体から上記中央軸に沿って上記凹部から上記下面まで延びる中央開口部を備えるサセプタ。 - 上記凹部は、上記本体の上面に略対向する面を有する請求項1記載のサセプタ。
- 上記面は、外側縁から内側縁に向かって下方に傾斜する請求項2記載のサセプタ。
- 上記面は凹面であることを特徴とする請求項3記載のサセプタ。
- 上記凹部は円形状を有する請求項1記載のサセプタ。
- 上記開口部は円形状を有する請求項1記載のサセプタ。
- サセプタ本体の下面が、サセプタ支持体を受容することができる大きさおよび位置に形成された複数の開口部を有する請求項1記載のサセプタ。
- 上記凹部が約0.027インチの深さを有する請求項1記載のサセプタ。
- 上記凹部の面が、約6ミリメートルの幅長を有する請求項1記載のサセプタ。
- 内部スペースを有する加熱されたチャンバー内において、半導体ウェハを支持するサセプタであって、
当該半導体ウェハは、フロント面、該フロント面と反対のバック面、上記フロント面および上記バック面の外周に延在する外周側面を有し、
当該サセプタは、半導体ウェハをチャンバーの内部スペース内に受容し支持することができる大きさおよび形状に形成され、
当該サセプタは、
上面と、当該上面と反対の下面と、を有する本体と、
当該上面から当該本体に仮想の中央軸に沿って下方に延び、半導体ウェハを受容することができる大きさおよび形状に形成されたウェハ係合面を含む凹部と、
上記本体を通って上記中央軸に沿って上記凹部から上記下面まで延びる中央開口部と、を備えるサセプタ。 - 上記ウェハ係合面は、外側縁から内側縁に向かって下方に傾斜する請求項10記載のサセプタ。
- 上記ウェハ係合面は凹面である請求項11記載のサセプタ。
- 上記凹部は円形状を有する請求項10記載のサセプタ。
- 上記開口部は円形状を有する請求項10記載のサセプタ。
- 上記開口部は約8.66インチの直径を有する請求項14記載のサセプタ。
- 上記サセプタ本体は、当該本体を貫通する複数のリフトピン開口部を有し、当該複数のリフトピン開口部のそれぞれは、上記ウェハを上記凹部に対して選択的に上昇および下降させるためリフトピンを受容することができる大きさに形成された請求項10記載のサセプタ。
- 上記サセプタ本体の下面は、サセプタ支持体を受容することができる大きさおよび位置に形成された複数の開口部を有する請求項10記載のサセプタ。
- 上記凹部は、約0.027インチの深さを有する請求項10記載のサセプタ。
- 上記凹面は、約6ミリメートル(mm)の幅長を有する請求項10記載のサセプタ。
- 上記サセプタが800℃の初期温度を有し、約1150℃の温度を有するチャンバーに配置されたとき、15秒未満で定常温度に達する請求項10記載のサセプタ。
- 内部スペースを有する加熱されたチャンバー内において半導体ウェハを支持するサセプタであって、
当該ウェハは、フロント面、バック面、外周側面を有し、チャンバーの内部スペース内に半導体ウェハを支持することができる大きさおよび形状に形成され、
当該サセプタは、
上面と、
当該上面から下方に延び、半導体ウェハを受容するよう適合された第1凹部であって、略円形の第1壁部と、該第1壁部から上記第1凹部の中央に向かって延びる第1棚部と、を有し、該第1棚部は、外周部と内周部とを有し、上記第1棚部が、ウェハの支持を容易にするため上記外周部から内周部に向かって下方に傾斜する第1凹部と、
上記第1凹部から下方に延びる第2凹部であって、略円形の第2壁部と、該第2壁部から内側へ延びる第2棚部と、を有する第2凹部と、
上記第2凹部から下方に延びる第3凹部であって、略円形の第3壁部と、該第3壁部から内側に延在するフロアーと、を有する第3凹部と、を有し、
上記第1、第2、第3凹部は、共通の中央軸を有するサセプタ。 - 上記ウェハのバック面と上記第3凹部のフロアーとの間の距離が、約0.005インチ〜約0.030インチである請求項21記載のサセプタ。
- 上記ウェハのバック面と上記第3凹部のフロアーとの間の距離が、約0.008インチ〜約0.030インチである請求項21記載のサセプタ。
- 上記ウェハのバック面と上記第3凹部のフロアーとの間の距離が、約0.010インチ〜約0.030インチである請求項21記載のサセプタ。
- 上記凹部のどの部分もサセプタ下面までサセプタを貫通しない請求項21記載のサセプタ。
- 上記凹部の棚部は略傾斜し凹状であり、
上記の略円形の第2壁部の下端と上記の略円形の第3壁部の上端との間の垂直距離が、約0.010インチを超えない請求項21記載のサセプタ。 - 上記ウェハが、バック面の端部近郊の外周端部もしくは外周領域が、上記第1棚部と接触するようにサセプタ上に配置される請求項21記載のサセプタ。
- 上記凹部が略円形状である請求項21記載のサセプタ。
- 内部スペースと、チャンバーの内部スペースにプロセスガスを導入するためのガス入口と、プロセスガスをチャンバーの内部スペースから排気するためのガス出口と、を有するチャンバー内において半導体ウェハを支持するサセプタであって、
当該ウェハは、フロント面、バック面、および外周側面を有し、チャンバーの内部スペース内において半導体ウェハを支持することができる大きさおよび形状に形成され、
当該サセプタは、
上面と
当該上面から下方に延び、半導体ウェハを受容するよう適合された第1凹部であって、略円形の第1壁部と、当該第1壁部から凹部の中央に向かって延びる第1棚部と、を含み、第1棚部が、外周部と内周部とを有する第1凹部と、
上記第1凹部から下方に延び、略円形の第2壁部と、当該第2壁部から内側に向かって延びる第2棚部と、を有する第2凹部と、
第2凹部から下方に延び、略円形の第3壁部と、当該第3壁部から内側に延在するフロアーと、を有し、加熱の間のウェハの歪みによりウェハの端部に近接する部分以外でウェハがサセプタと接触することを抑制するために、ウェハのバック面と第3凹部のフロアーとの間の距離が約0.005インチ〜約0.030インチであるサセプタ。 - 上記第1および第2凹部の表面積の、上記第3凹部のフロアーの表面積に対する比率が、スリップを最小化するため、少なくとも約13〜約1である請求項29記載のサセプタ。
- 上記第1棚部は、上記ウェハの支持を容易にするため、外周部から内周部に向かって下方に傾斜する請求項29記載のサセプタ。
- 内部スペースと、チャンバーの当該内部スペースにプロセスガスを導入するためのガス入口と、プロセスガスをチャンバーの内部スペースから排気するためのガス出口と、を有するチャンバー内において半導体ウェハを支持するサセプタであって、
当該ウェハは、フロント面、バック面、外周側面を有し、
当該サセプタは、チャンバーの内部スペース内に半導体ウェハを支持することができる大きさおよび形状に形成され、
当該サセプタは、
上面と
当該上面から下方に延び、半導体ウェハを支持する棚部を含むウェハ受容凹部と、
当該ウェハ受容凹部と同軸上にあって当該ウェハ受容凹部よりも深くサセプタに延びる中央凹部と、を有し、
当該中央凹部の表面積に対するウェハ受容凹部の表面積の比率が、スリップを最小化するため少なくとも約13〜約1であるサセプタ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US94491007P | 2007-06-19 | 2007-06-19 | |
US11/965,506 US20080314319A1 (en) | 2007-06-19 | 2007-12-27 | Susceptor for improving throughput and reducing wafer damage |
PCT/US2008/067344 WO2008157605A1 (en) | 2007-06-19 | 2008-06-18 | Susceptor for improving throughput and reducing wafer damage |
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JP2012237034A Division JP2013093582A (ja) | 2007-06-19 | 2012-10-26 | スループットを改善しウェハダメージを低減するサセプタ |
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JP2012237034A Pending JP2013093582A (ja) | 2007-06-19 | 2012-10-26 | スループットを改善しウェハダメージを低減するサセプタ |
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US (1) | US20080314319A1 (ja) |
EP (1) | EP2165358B1 (ja) |
JP (2) | JP2010530645A (ja) |
KR (1) | KR20100029772A (ja) |
CN (1) | CN101772836B (ja) |
AT (1) | ATE521084T1 (ja) |
TW (1) | TWI352400B (ja) |
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JP7063493B2 (ja) | 2020-09-14 | 2022-05-09 | 株式会社 天谷製作所 | 成膜用冶具及び気相成長装置 |
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CN114141691B (zh) * | 2021-12-14 | 2022-06-17 | 北京北方华创微电子装备有限公司 | 半导体工艺设备 |
Also Published As
Publication number | Publication date |
---|---|
ATE521084T1 (de) | 2011-09-15 |
CN101772836B (zh) | 2012-07-25 |
CN101772836A (zh) | 2010-07-07 |
US20080314319A1 (en) | 2008-12-25 |
WO2008157605A1 (en) | 2008-12-24 |
TW200910513A (en) | 2009-03-01 |
EP2165358B1 (en) | 2011-08-17 |
KR20100029772A (ko) | 2010-03-17 |
TWI352400B (en) | 2011-11-11 |
EP2165358A1 (en) | 2010-03-24 |
JP2013093582A (ja) | 2013-05-16 |
WO2008157605A4 (en) | 2009-02-26 |
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