JP4666723B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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JP4666723B2
JP4666723B2 JP2000204253A JP2000204253A JP4666723B2 JP 4666723 B2 JP4666723 B2 JP 4666723B2 JP 2000204253 A JP2000204253 A JP 2000204253A JP 2000204253 A JP2000204253 A JP 2000204253A JP 4666723 B2 JP4666723 B2 JP 4666723B2
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island
semiconductor layer
region
shaped semiconductor
forming
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Japanese (ja)
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JP2001077373A (ja
JP2001077373A5 (enExample
Inventor
舜平 山崎
康行 荒井
潤 小山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
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US7569854B2 (en) 2009-08-04
US20160260842A1 (en) 2016-09-08
US20140011331A1 (en) 2014-01-09
US6777254B1 (en) 2004-08-17
US8859353B2 (en) 2014-10-14
US20150091017A1 (en) 2015-04-02
US8530896B2 (en) 2013-09-10
US20040222467A1 (en) 2004-11-11
US9786787B2 (en) 2017-10-10
US20090290082A1 (en) 2009-11-26
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