JP4458563B2 - 薄膜トランジスタの製造方法およびこれを用いた液晶表示装置の製造方法 - Google Patents

薄膜トランジスタの製造方法およびこれを用いた液晶表示装置の製造方法 Download PDF

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Publication number
JP4458563B2
JP4458563B2 JP08629198A JP8629198A JP4458563B2 JP 4458563 B2 JP4458563 B2 JP 4458563B2 JP 08629198 A JP08629198 A JP 08629198A JP 8629198 A JP8629198 A JP 8629198A JP 4458563 B2 JP4458563 B2 JP 4458563B2
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Japan
Prior art keywords
contact hole
interlayer insulating
insulating film
electrode
liquid crystal
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Expired - Fee Related
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JP08629198A
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English (en)
Japanese (ja)
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JPH11283934A5 (enExample
JPH11283934A (ja
Inventor
和式 井上
理 青木
宗人 熊谷
茂昭 野海
徹 竹口
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP08629198A priority Critical patent/JP4458563B2/ja
Priority to US09/153,332 priority patent/US6218206B1/en
Priority to TW087118035A priority patent/TW406311B/zh
Priority to KR10-1998-0051372A priority patent/KR100375435B1/ko
Publication of JPH11283934A publication Critical patent/JPH11283934A/ja
Publication of JPH11283934A5 publication Critical patent/JPH11283934A5/ja
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Publication of JP4458563B2 publication Critical patent/JP4458563B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP08629198A 1998-03-31 1998-03-31 薄膜トランジスタの製造方法およびこれを用いた液晶表示装置の製造方法 Expired - Fee Related JP4458563B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP08629198A JP4458563B2 (ja) 1998-03-31 1998-03-31 薄膜トランジスタの製造方法およびこれを用いた液晶表示装置の製造方法
US09/153,332 US6218206B1 (en) 1998-03-31 1998-09-15 Method for producing thin film transistor and thin film transistor using the same
TW087118035A TW406311B (en) 1998-03-31 1998-10-30 Manufacturing method of thin-film transistor and liquid crystal display device using the same
KR10-1998-0051372A KR100375435B1 (ko) 1998-03-31 1998-11-27 박막트랜지스터의제조방법및이것을이용한액정표시장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP08629198A JP4458563B2 (ja) 1998-03-31 1998-03-31 薄膜トランジスタの製造方法およびこれを用いた液晶表示装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007034064A Division JP4800236B2 (ja) 2007-02-14 2007-02-14 薄膜トランジスタの製造方法およびこれを用いた液晶表示装置

Publications (3)

Publication Number Publication Date
JPH11283934A JPH11283934A (ja) 1999-10-15
JPH11283934A5 JPH11283934A5 (enExample) 2004-11-18
JP4458563B2 true JP4458563B2 (ja) 2010-04-28

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JP08629198A Expired - Fee Related JP4458563B2 (ja) 1998-03-31 1998-03-31 薄膜トランジスタの製造方法およびこれを用いた液晶表示装置の製造方法

Country Status (4)

Country Link
US (1) US6218206B1 (enExample)
JP (1) JP4458563B2 (enExample)
KR (1) KR100375435B1 (enExample)
TW (1) TW406311B (enExample)

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KR100375435B1 (ko) 2003-07-22
JPH11283934A (ja) 1999-10-15
US6218206B1 (en) 2001-04-17
TW406311B (en) 2000-09-21

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