KR100375435B1 - 박막트랜지스터의제조방법및이것을이용한액정표시장치 - Google Patents

박막트랜지스터의제조방법및이것을이용한액정표시장치 Download PDF

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Publication number
KR100375435B1
KR100375435B1 KR10-1998-0051372A KR19980051372A KR100375435B1 KR 100375435 B1 KR100375435 B1 KR 100375435B1 KR 19980051372 A KR19980051372 A KR 19980051372A KR 100375435 B1 KR100375435 B1 KR 100375435B1
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South Korea
Prior art keywords
contact hole
drain electrode
insulating film
interlayer insulating
forming
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Expired - Fee Related
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KR10-1998-0051372A
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Korean (ko)
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KR19990076545A (ko
Inventor
카즈노리 이노우에
마사루 아오키
무네히토 쿠마가이
시게아키 노우미
토오루 타케구치
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미쓰비시덴키 가부시키가이샤
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Publication of KR19990076545A publication Critical patent/KR19990076545A/ko
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Publication of KR100375435B1 publication Critical patent/KR100375435B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
KR10-1998-0051372A 1998-03-31 1998-11-27 박막트랜지스터의제조방법및이것을이용한액정표시장치 Expired - Fee Related KR100375435B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP086291 1998-03-31
JP86291 1998-03-31
JP08629198A JP4458563B2 (ja) 1998-03-31 1998-03-31 薄膜トランジスタの製造方法およびこれを用いた液晶表示装置の製造方法

Publications (2)

Publication Number Publication Date
KR19990076545A KR19990076545A (ko) 1999-10-15
KR100375435B1 true KR100375435B1 (ko) 2003-07-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-1998-0051372A Expired - Fee Related KR100375435B1 (ko) 1998-03-31 1998-11-27 박막트랜지스터의제조방법및이것을이용한액정표시장치

Country Status (4)

Country Link
US (1) US6218206B1 (enExample)
JP (1) JP4458563B2 (enExample)
KR (1) KR100375435B1 (enExample)
TW (1) TW406311B (enExample)

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US6218206B1 (en) 2001-04-17
TW406311B (en) 2000-09-21

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