JP2019096880A - 垂直型メモリ装置 - Google Patents
垂直型メモリ装置 Download PDFInfo
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- 239000012535 impurity Substances 0.000 claims abstract description 196
- 238000003860 storage Methods 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 230000000149 penetrating effect Effects 0.000 claims abstract description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 47
- 229920005591 polysilicon Polymers 0.000 claims description 47
- 238000009792 diffusion process Methods 0.000 claims description 33
- 239000011229 interlayer Substances 0.000 claims description 31
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 17
- 229910052799 carbon Inorganic materials 0.000 claims description 17
- 150000004767 nitrides Chemical class 0.000 claims description 15
- 230000002265 prevention Effects 0.000 claims description 15
- 235000010957 calcium stearoyl-2-lactylate Nutrition 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 23
- 239000010410 layer Substances 0.000 description 111
- 238000000034 method Methods 0.000 description 38
- 238000005530 etching Methods 0.000 description 37
- 230000000903 blocking effect Effects 0.000 description 26
- 125000006850 spacer group Chemical group 0.000 description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- 230000004888 barrier function Effects 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 14
- 238000001039 wet etching Methods 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- -1 GaP Chemical class 0.000 description 4
- 238000003491 array Methods 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
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Abstract
Description
Claims (25)
- 基板の上面に垂直な第1方向に沿って順次に積層した第1乃至第3不純物領域と、
前記第3不純物領域上で互いに離隔したゲート電極を含むゲート電極構造物と、
前記基板上で前記第1方向に延び、前記ゲート電極構造物、前記第2及び第3不純物領域を貫通して前記第1不純物領域の上部に至るチャンネルと、
前記チャンネルの側壁の一部をカバーする電荷貯蔵構造物とを含み、
前記チャンネルは前記第2不純物領域の側壁と直接接触することを特徴とする、垂直型メモリ装置。 - 前記第1及び第3不純物領域は炭素及びN型不純物がドーピングされたポリシリコンを含み、前記第2不純物領域はN型不純物がドーピングされたポリシリコンを含むことを特徴とする、請求項1に記載の垂直型メモリ装置。
- 前記第1及び第3不純物領域は炭素及びP型不純物がドーピングされたポリシリコンを含み、前記第2不純物領域はP型不純物がドーピングされたポリシリコンを含むことを特徴とする、請求項1に記載の垂直型メモリ装置。
- 前記第1及び第3不純物領域の間に形成された支持パターンをさらに含むことを特徴とする、請求項1ないし3のうちの何れか一項に記載の垂直型メモリ装置。
- 前記支持パターンは、前記第3不純物領域の底面に接触することを特徴とする、請求項4に記載の垂直型メモリ装置。
- 前記支持パターンは、炭素がドーピングされたポリシリコンを含むことを特徴とする、請求項4に記載の垂直型メモリ装置。
- 前記第1不純物領域と前記支持パターンとの間に形成され、前記第1不純物領域に含まれる不純物の拡散を防止する拡散防止パターンをさらに含むことを特徴とする、請求項4に記載の垂直型メモリ装置。
- 前記拡散防止パターンは、酸化物または窒化物を含むことを特徴とする、請求項7に記載の垂直型メモリ装置。
- 前記第1不純物領域及び前記支持パターンの上部に形成され、前記第1方向に延びる共通ソースライン(CSL)をさらに含むことを特徴とする、請求項4に記載の垂直型メモリ装置。
- 前記CSLは前記基板の上面に平行な第2方向に延び、前記基板の上面に平行で前記第2方向と直交する第3方向に沿って複数個形成され、
前記支持パターンは前記CSLの底面の一部をカバーすることを特徴とする、請求項9に記載の垂直型メモリ装置。 - 前記支持パターンは前記各CSLの下部で前記第2方向に沿って互いに離隔するように複数個形成されていることを特徴とする、請求項10に記載の垂直型メモリ装置。
- 前記第2不純物領域は、前記チャンネルの側壁と前記第3不純物領域の側壁とに直接接触することを特徴とする、請求項1ないし11のうちの何れか一項に記載の垂直型メモリ装置。
- 前記電荷貯蔵構造物は、前記第1方向において前記第2不純物領域より高い位置に形成された第1部分、及び前記第1方向において前記第2不純物領域より低い位置に形成された第2部分を含み、
前記第1部分は前記チャンネルから遠ざかるほど前記第1方向において徐々に高い位置にあり、前記第2部分の上面は前記チャンネルから遠ざかるほど前記第1方向において徐々に低い位置にあるような形状を有することを特徴とする、請求項12に記載の垂直型メモリ装置。 - 前記第2不純物領域は、エアーギャップを含むことを特徴とする、請求項1ないし13のうちの何れか一項に記載の垂直型メモリ装置。
- 前記基板と前記第1不純物領域との間に形成された層間絶縁膜をさらに含むことを特徴とする、請求項1ないし14のうちの何れか一項に記載の垂直型メモリ装置。
- 前記層間絶縁膜は、前記基板上に形成された回路パターンをカバーすることを特徴とする、請求項15に記載の垂直型メモリ装置。
- 前記層間絶縁膜と前記第1不純物領域との間に形成されたCSLプレートをさらに含むことを特徴とする、請求項15に記載の垂直型メモリ装置。
- 基板の上面に垂直な第1方向に沿って順次に積層した第1乃至第3不純物領域と、
前記第3不純物領域上で互いに離隔したゲート電極を含むゲート電極構造物と、
前記基板上で前記第1方向に延び、前記ゲート電極構造物、及び前記第2及び第3不純物領域を貫通し、少なくとも一部が前記第2不純物領域に接触するチャンネルと、
前記チャンネルの側壁の一部をカバーする電荷貯蔵構造物と、
前記第1及び第3不純物領域の間に形成され、前記第2不純物領域の側壁に接触し、前記第3不純物領域の底面に接触し、少なくとも前記第3不純物領域を支持する支持パターンとを含むことを特徴とする、垂直型メモリ装置。 - 前記支持パターンは、炭素がドーピングされたポリシリコンを含むことを特徴とする、請求項18に記載の垂直型メモリ装置。
- 前記第1不純物領域と前記支持パターンとの間に形成され、前記第1不純物領域に含まれる不純物の拡散を防止する拡散防止パターンをさらに含むことを特徴とする、請求項18に記載の垂直型メモリ装置。
- 前記拡散防止パターンは、酸化物または窒化物を含むことを特徴とする、請求項20に記載の垂直型メモリ装置。
- 前記第1不純物領域及び前記支持パターンの上部に形成され、前記第1方向に延びる共通ソースライン(CSL)をさらに含むことを特徴とする、請求項18に記載の垂直型メモリ装置。
- 前記CSLは前記基板の上面に平行な第2方向に延び、前記基板の上面に平行で前記第2方向と直交する第3方向に沿って複数個形成され、
前記支持パターンは前記CSLの底面の一部をカバーすることを特徴とする、請求項22に記載の垂直型メモリ装置。 - 前記支持パターンは、前記各CSLの下部で前記第2方向に沿って互いに離隔するように複数個形成されていることを特徴とする、請求項23に記載の垂直型メモリ装置。
- 基板上に形成されて不純物がドーピングされたポリシリコンを含む不純物領域構造物と、
前記不純物領域構造物上で前記基板の上面に垂直な第1方向に沿って互いに離隔したゲート電極を含むゲート電極構造物と、
前記基板上で前記第1方向に延び、前記ゲート電極構造物及び前記不純物領域構造物の少なくとも一部を貫通するチャネルであって、前記チャネルの側壁の第1部分が前記不純物領域構造物に直接接触するチャンネルと、
前記チャネルの側壁のうち前記不純物領域構造物に直接接触しない部分である第2部分をカバーする電荷貯蔵構造物とを含むことを特徴とする、垂直型メモリ装置。
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Also Published As
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KR102549967B1 (ko) | 2023-06-30 |
US10559591B2 (en) | 2020-02-11 |
JP7292027B2 (ja) | 2023-06-16 |
SG10201911469VA (en) | 2020-01-30 |
CN109817633B (zh) | 2024-05-17 |
US20190157294A1 (en) | 2019-05-23 |
EP3486951A1 (en) | 2019-05-22 |
US20200144288A1 (en) | 2020-05-07 |
CN109817633A (zh) | 2019-05-28 |
KR20190058079A (ko) | 2019-05-29 |
EP3486951B1 (en) | 2020-05-27 |
US10854632B2 (en) | 2020-12-01 |
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