JP2021150328A - 半導体記憶装置および半導体記憶装置の製造方法 - Google Patents
半導体記憶装置および半導体記憶装置の製造方法 Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- H10B—ELECTRONIC MEMORY DEVICES
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Abstract
Description
図1は、実施形態にかかる半導体記憶装置1の構成の一例を示すY方向に沿う断面図である。図1に示すように、実施形態の半導体記憶装置1は基板SB及び積層体LMを備える。
次に、図2〜図9を用いて、実施形態の半導体記憶装置1の製造方法について説明する。図2〜図9は、実施形態にかかる半導体記憶装置1の製造方法の手順の一例を示す断面図である。
次に、比較例の半導体記憶装置について説明する。比較例の半導体記憶装置の製造方法では、例えばSiN層等の1種類の犠牲層と、絶縁層とが1層ずつ交互に積層されて、リプレース前の積層体が形成される。リプレース時には、個々の絶縁層間の犠牲層が除去されて、ギャップと1層の絶縁層とが交互に積層された積層体となる。このとき、絶縁層が応力によって撓み、ワード線の形成に支障が生じるほか、積層体が倒壊してしまう恐れがある。メモリセルの集積度を高めるため、積層体を構成する各層はいっそう薄くなる傾向にあり、絶縁層の撓みはより顕著となる。
次に、図10を用いて、実施形態の変形例の半導体記憶装置2について説明する。図10は、実施形態の変形例にかかる半導体記憶装置2の構成の一例を示すY方向に沿う断面図である。図10に示すように、変形例の半導体記憶装置2は、積層体LMの下層構造がソース線SLである点が、上述の実施形態とは異なる。
上述の実施形態では、犠牲層NLのワード線WLへのリプレース処理を先に実施し、犠牲層PLのワード線WLへのリプレース処理を後から実施することとしたが、これらの処理は入れ替え可能である。この場合、スリットSTp,STnを形成した後、犠牲層PLとは異種の材料から構成されるSiN層等の犠牲層をスリットSTn内に充填し、スリットSTpを介して犠牲層PLのリプレースを行う。その後、スリットSTnを介して犠牲層NLのリプレースを行う。
Claims (5)
- 複数の第1の導電層および複数の絶縁層が1層ずつ交互に積層された積層体と、
前記積層体内を前記積層体の積層方向に延びるピラーと、
前記複数の第1の導電層と前記ピラーとの交差部にそれぞれ形成される複数のメモリセルと、
前記積層体の下方に配置される下層構造と、
前記下層構造の上面に開口し、前記下層構造の上面の面方向に沿う第1の方向に延びる溝内に金属層が充填された下受け部と、
前記第1の方向に延びるとともに、前記積層体内を前記積層方向に延び、前記下受け部内に下端部が配置される帯状部と、を備える、
半導体記憶装置。 - 前記下受け部が前記帯状部の前記下端部を取り囲むことにより、前記帯状部と前記下層構造とは互いに離隔されている、
請求項1に記載の半導体記憶装置。 - 前記帯状部は、
前記帯状部の延伸方向に沿って前記帯状部の内側を延びる第2の導電層を有し、
前記第2の導電層は、
前記下受け部の前記金属層に接続されている、
請求項1または請求項2に記載の半導体記憶装置。 - 前記下層構造は、
半導体基板または前記半導体基板の上方に配置された第3の導電層である、
請求項1乃至請求項3のいずれか1項に記載の半導体記憶装置。 - 第1の犠牲層および前記第1の犠牲層とは異種の材料で構成される第2の犠牲層を含む複数の犠牲層および複数の絶縁層が1層ずつ交互に積層される第1の積層体を形成し、
前記第1の積層体内を前記第1の積層体の積層方向に延び、側面にチャネル層およびメモリ層を有するピラーを形成し、
前記第1の犠牲層を導電層に置換して、前記導電層、前記第2の犠牲層、及び前記複数の絶縁層が積層される第2の積層体を形成し、
前記第2の犠牲層を第1の導電層に置換して、複数の前記導電層および前記複数の絶縁層が1層ずつ交互に積層される第3の積層体を形成する、
半導体記憶装置の製造方法。
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JP2020045534A JP7414600B2 (ja) | 2020-03-16 | 2020-03-16 | 半導体記憶装置の製造方法 |
TW109127052A TWI768428B (zh) | 2020-03-16 | 2020-08-10 | 半導體記憶裝置及半導體記憶裝置之製造方法 |
US17/010,165 US20210288065A1 (en) | 2020-03-16 | 2020-09-02 | Semiconductor storage device and semiconductor storage device manufacturing method |
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KR102078852B1 (ko) | 2013-08-29 | 2020-02-18 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
JP2015170742A (ja) | 2014-03-07 | 2015-09-28 | 株式会社東芝 | 集積回路装置及びその製造方法 |
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