JP2011137228A - 真空処理装置用シャワーヘッド・アセンブリ - Google Patents
真空処理装置用シャワーヘッド・アセンブリ Download PDFInfo
- Publication number
- JP2011137228A JP2011137228A JP2010275101A JP2010275101A JP2011137228A JP 2011137228 A JP2011137228 A JP 2011137228A JP 2010275101 A JP2010275101 A JP 2010275101A JP 2010275101 A JP2010275101 A JP 2010275101A JP 2011137228 A JP2011137228 A JP 2011137228A
- Authority
- JP
- Japan
- Prior art keywords
- plate
- showerhead
- vacuum processing
- processing chamber
- back plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000429 assembly Methods 0.000 claims abstract description 13
- 230000000712 assembly Effects 0.000 claims abstract description 13
- 125000006850 spacer group Chemical group 0.000 claims abstract description 4
- 238000003780 insertion Methods 0.000 claims description 17
- 230000037431 insertion Effects 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 11
- 229920006362 Teflon® Polymers 0.000 claims description 7
- 239000004809 Teflon Substances 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 230000013011 mating Effects 0.000 claims 1
- 230000008602 contraction Effects 0.000 abstract description 7
- 239000007789 gas Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
- Y10T29/49947—Assembling or joining by applying separate fastener
- Y10T29/49948—Multipart cooperating fastener [e.g., bolt and nut]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Quality & Reliability (AREA)
- Theoretical Computer Science (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Measuring Or Testing Involving Enzymes Or Micro-Organisms (AREA)
- Apparatus Associated With Microorganisms And Enzymes (AREA)
- Automatic Analysis And Handling Materials Therefor (AREA)
Abstract
【解決手段】シャワーヘッド・アセンブリは、チャンバ・ボディに堅固に取り付けられたバック・プレート125と、シャワーヘッド・プレート120をOリング140,スペーサ145を介してバック・プレート125に摺動可能に取り付け、それにより、シャワーヘッド・プレート120とバック・プレート125との間にガスシールが維持されているときにシャワーヘッド・プレート120をバック・プレート125に対して摺動可能にする締結アセンブリ150とを含む。
【選択図】図2
Description
Claims (20)
- チャンバ・ボディと、
前記チャンバ・ボディの上部に結合されるシャワーヘッド・アセンブリと
を含む真空処理チャンバであって、
前記シャワーヘッド・アセンブリは、
前記チャンバ・ボディに堅固に取り付けられたバック・プレートと、
穿孔(perforated)されたシャワーヘッド・プレートと、
前記シャワーヘッド・プレートが前記バック・プレートに対して摺動するように、前記シャワーヘッド・プレートを前記バック・プレートに摺動可能に締結する複数の締結アセンブリと
を含み、
前記シャワーヘッド・プレートと前記バック・プレートとの間にガスシールが維持される
ことを特徴とする真空処理チャンバ。 - 前記穿孔されたシャワーヘッド・プレートは、その周縁に複数の楕円形孔を有し、
前記複数の締結アセンブリは、前記複数の楕円形孔にそれぞれ挿入される
ことを特徴とする請求項1に記載の真空処理チャンバ。 - 前記シャワーヘッド・アセンブリは、前記シャワーヘッド・プレートと前記バック・プレートとの間に設けられたOリングをさらに含む
ことを特徴とする請求項1に記載の真空処理チャンバ。 - 前記シャワーヘッド・アセンブリは、前記シャワーヘッド・プレートと前記バック・プレートとの間に設けられたスペーサをさらに含み、それにより、前記シャワーヘッド・プレートと前記バック・プレートとの間に小さい隙間を維持する
ことを特徴とする請求項1に記載の真空処理チャンバ。 - 前記シャワーヘッド・プレートは、円形孔と、前記円形孔を貫通して前記シャワーヘッド・プレートを前記バック・プレートに固定的に締結するボルトとをさらに含む
ことを特徴とする請求項1に記載の真空処理チャンバ。 - 前記複数の楕円形孔のそれぞれは、その長軸が前記シャワーヘッド・プレートの中心から放射状に延びて当該楕円形孔を通る直線に沿って存在するように方向付けられている
ことを特徴とする請求項2に記載の真空処理チャンバ。 - 前記締結アセンブリのそれぞれは、前記締結アセンブリが前記楕円形孔の内部に着座されるときに唯一つの方向付けだけを可能とするキーを有する
ことを特徴とする請求項6に記載の真空処理チャンバ。 - 前記締結アセンブリのそれぞれは、玉軸受けアセンブリと、前記玉軸受けアセンブリを貫通するボルトとを含む
ことを特徴とする請求項1に記載の真空処理チャンバ。 - 前記玉軸受けアセンブリは、
楕円形孔を有する挿入部材と、
複数の非円形孔を有する摺動プレートと、
それぞれが前記非円形孔の一つに対して設けられる複数の玉と、
円形の穴を有するカバー・プレートと
を含むことを特徴とする請求項8に記載の真空処理チャンバ。 - 前記挿入部材は、前記シャワーヘッド・プレートの前記楕円形孔のうち一つの内部において前記挿入部材を方向付けるキーをさらに有する
ことを特徴とする請求項9に記載の真空処理チャンバ。 - 前記挿入部材、前記摺動プレート、前記複数の玉、及び前記カバー・プレートの少なくとも一つがセラミックで形成される
ことを特徴とする請求項9に記載の真空処理チャンバ。 - 前記締結アセンブリを覆う覆いプレートをさらに含む
ことを特徴とする請求項8に記載の真空処理チャンバ。 - 前記締結アセンブリのそれぞれは、
楕円形孔及び摺動面を有する挿入部材と、
前記摺動面に対面する合わせ面を有するカバー・プレートと、
前記挿入部材及び前記カバー・プレートを貫通するボルトと
を含むことを特徴とする請求項1に記載の真空処理チャンバ。 - 前記締結アセンブリのそれぞれは、前記挿入部材と前記カバー・プレートとの間に挿入された摺動プレートをさらに含む
ことを特徴とする請求項1に記載の真空処理チャンバ。 - 前記摺動プレートはTeflonのプレートを含む
ことを特徴とする請求項1に記載の真空処理チャンバ。 - シャワーヘッド・アセンブリを真空処理チャンバに締結する方法であって、
バック・プレートを前記真空処理チャンバに固定的に取り付け、
複数の締結アセンブリを使用して、穿孔されたシャワーヘッド・プレートを前記バック・プレートに結合することにより、前記穿孔されたシャワーヘッド・プレートを前記バック・プレートに摺動可能に取り付け、
前記穿孔されたシャワーヘッド・プレートと前記バック・プレートとの間にガスシールを提供する
ことを特徴とする方法。 - 前記摺動可能に取り付けることは、玉軸受けアセンブリを介して前記穿孔されたシャワーヘッド・プレートを前記バック・プレートに螺締すること含む
ことを特徴とする請求項16に記載の方法。 - さらに、前記穿孔されたシャワーヘッド・プレートと前記バック・プレートとの間にスペーサを挿入する
ことを特徴とする請求項17に記載の方法。 - さらに、前記玉軸受けアセンブリのそれぞれを、前記シャワーヘッド・プレートの中心から放射状に延びる仮想線と一直線になるように方向付ける
ことを特徴とする請求項17に記載の方法。 - さらに、前記シャワーヘッド・プレートを前記バック・プレートに一箇所で固定的に取り付ける
ことを特徴とする請求項16に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US28550509P | 2009-12-10 | 2009-12-10 | |
US61/285,505 | 2009-12-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011137228A true JP2011137228A (ja) | 2011-07-14 |
JP5721132B2 JP5721132B2 (ja) | 2015-05-20 |
Family
ID=43502633
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010275101A Active JP5721132B2 (ja) | 2009-12-10 | 2010-12-09 | 真空処理装置用シャワーヘッド・アセンブリ及び真空処理装置用シャワーヘッド・アセンブリを真空処理チャンバに締結する方法 |
JP2010275100A Expired - Fee Related JP5835722B2 (ja) | 2009-12-10 | 2010-12-09 | 自動順位付け多方向直列型処理装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010275100A Expired - Fee Related JP5835722B2 (ja) | 2009-12-10 | 2010-12-09 | 自動順位付け多方向直列型処理装置 |
Country Status (6)
Country | Link |
---|---|
US (4) | US8444364B2 (ja) |
EP (3) | EP2336389B1 (ja) |
JP (2) | JP5721132B2 (ja) |
KR (3) | KR101732348B1 (ja) |
CN (3) | CN102094188B (ja) |
TW (3) | TWI436831B (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8444364B2 (en) | 2009-12-10 | 2013-05-21 | Orbotech LT Solar, LLC. | Auto-sequencing multi-directional inline processing apparatus |
JP2014227606A (ja) * | 2013-05-24 | 2014-12-08 | 上海和輝光電有限公司Everdisplay Optronics (Shanghai) Limited | 分散板 |
JP2017022295A (ja) * | 2015-07-14 | 2017-01-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
CN111385955A (zh) * | 2018-12-28 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理器的安装结构及相应的等离子体处理器 |
JP7534049B2 (ja) | 2021-01-20 | 2024-08-14 | 東京エレクトロン株式会社 | 保持部材、上部電極アセンブリ、及びプラズマ処理装置 |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011146571A2 (en) | 2010-05-21 | 2011-11-24 | Applied Materials, Inc. | Tightly-fitted ceramic insulator on large-area electrode |
US20120288355A1 (en) * | 2011-05-11 | 2012-11-15 | Ming-Teng Hsieh | Method for storing wafers |
US8459276B2 (en) | 2011-05-24 | 2013-06-11 | Orbotech LT Solar, LLC. | Broken wafer recovery system |
US20130092085A1 (en) * | 2011-10-17 | 2013-04-18 | Synos Technology, Inc. | Linear atomic layer deposition apparatus |
JP5840095B2 (ja) * | 2011-10-31 | 2016-01-06 | 三菱電機株式会社 | 太陽電池の製造装置、及び太陽電池の製造方法 |
US20130108406A1 (en) * | 2011-11-02 | 2013-05-02 | Varian Semiconductor Equipment Associates, Inc. | High-throughput workpiece handling |
WO2013077191A1 (ja) * | 2011-11-25 | 2013-05-30 | 東京エレクトロン株式会社 | 処理装置群コントローラ、生産処理システム、処理装置群制御方法、生産効率化システム、生産効率化装置および生産効率化方法 |
TW201332871A (zh) | 2011-12-07 | 2013-08-16 | Intevac Inc | 高載量太陽能晶圓裝載裝置 |
CN102544211B (zh) * | 2011-12-31 | 2013-10-30 | 常州天合光能有限公司 | 太阳能电池刻蚀方法及其设备 |
DE102012100929A1 (de) * | 2012-02-06 | 2013-08-08 | Roth & Rau Ag | Substratbearbeitungsanlage |
US20150295124A1 (en) * | 2012-04-02 | 2015-10-15 | Koji Matsumaru | Manufacturing equipment for photovoltaic devices and methods |
JP6267203B2 (ja) * | 2012-08-31 | 2018-01-24 | セミコンダクター テクノロジーズ アンド インストゥルメンツ ピーティーイー リミテッド | 多機能ウェハー及びフィルムフレームハンドリングシステム |
KR102064391B1 (ko) * | 2012-08-31 | 2020-01-10 | 삼성디스플레이 주식회사 | 기판 처리 장치 |
US9111980B2 (en) * | 2012-09-04 | 2015-08-18 | Applied Materials, Inc. | Gas exhaust for high volume, low cost system for epitaxial silicon deposition |
KR102014299B1 (ko) * | 2013-02-07 | 2019-08-26 | 주식회사 원익아이피에스 | 대상물 이송 시스템 및 이를 위한 캐리어 위치 초기화 방법 |
TWI490956B (zh) * | 2013-03-12 | 2015-07-01 | Shinkawa Kk | 覆晶接合器以及覆晶接合方法 |
EP2854155B1 (en) | 2013-09-27 | 2017-11-08 | INDEOtec SA | Plasma reactor vessel and assembly, and a method of performing plasma processing |
JP2015088694A (ja) * | 2013-11-01 | 2015-05-07 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
US9704762B2 (en) * | 2014-02-04 | 2017-07-11 | Applied Materials, Inc. | Application of in-line glass edge-inspection and alignment check in display manufacturing |
KR101613544B1 (ko) * | 2014-02-13 | 2016-04-19 | 주식회사 유진테크 | 기판 처리 장치 |
US9484243B2 (en) * | 2014-04-17 | 2016-11-01 | Lam Research Corporation | Processing chamber with features from side wall |
US10648927B2 (en) * | 2015-05-15 | 2020-05-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Method and apparatus for monitoring edge bevel removal area in semiconductor apparatus and electroplating system |
US10249521B2 (en) * | 2016-03-17 | 2019-04-02 | Lam Research Ag | Wet-dry integrated wafer processing system |
JP6739201B2 (ja) * | 2016-03-25 | 2020-08-12 | スピードファム株式会社 | 局所ドライエッチング装置 |
US10573549B2 (en) | 2016-12-01 | 2020-02-25 | Lam Research Corporation | Pad raising mechanism in wafer positioning pedestal for semiconductor processing |
KR102584339B1 (ko) * | 2016-10-12 | 2023-09-27 | 램 리써치 코포레이션 | 반도체 프로세싱용 웨이퍼 포지셔닝 페데스탈의 패드 상승 메커니즘 |
US9892956B1 (en) | 2016-10-12 | 2018-02-13 | Lam Research Corporation | Wafer positioning pedestal for semiconductor processing |
KR101855654B1 (ko) * | 2016-12-23 | 2018-05-08 | 주식회사 테스 | 대면적 샤워헤드 어셈블리 |
US20180230597A1 (en) * | 2017-02-14 | 2018-08-16 | Applied Materials, Inc. | Method and apparatus of remote plasmas flowable cvd chamber |
CN110402577B (zh) * | 2017-03-10 | 2021-06-22 | 富士胶片株式会社 | 图像处理系统、图像处理装置、图像处理方法及存储有图像处理程序的存储介质 |
CN107887308A (zh) * | 2017-12-01 | 2018-04-06 | 合肥芯欣智能科技有限公司 | 全自动多功能处理设备 |
CN107919311A (zh) * | 2017-12-19 | 2018-04-17 | 北京铂阳顶荣光伏科技有限公司 | 太阳能电池共蒸镀生产线 |
JP2020033625A (ja) * | 2018-08-31 | 2020-03-05 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
US10901328B2 (en) | 2018-09-28 | 2021-01-26 | Applied Materials, Inc. | Method for fast loading substrates in a flat panel tool |
TWI722744B (zh) * | 2019-01-07 | 2021-03-21 | 日商愛發科股份有限公司 | 真空處理裝置 |
TWI766219B (zh) * | 2019-01-07 | 2022-06-01 | 日商愛發科股份有限公司 | 真空處理裝置及真空處理裝置之清潔方法 |
US11637030B2 (en) | 2019-06-18 | 2023-04-25 | Kla Corporation | Multi-stage, multi-zone substrate positioning systems |
KR102640172B1 (ko) | 2019-07-03 | 2024-02-23 | 삼성전자주식회사 | 기판 처리 장치 및 이의 구동 방법 |
JP7488442B2 (ja) * | 2019-09-26 | 2024-05-22 | シンフォニアテクノロジー株式会社 | 搬送システム |
DE102020103947A1 (de) * | 2020-02-14 | 2021-08-19 | AIXTRON Ltd. | CVD-Reaktor und Verfahren zum Handhaben einer Prozesskammer-Deckenplatte |
US11626303B2 (en) * | 2020-04-23 | 2023-04-11 | Applied Materials, Inc. | Compliance components for semiconductor processing system |
CN111471965B (zh) * | 2020-04-30 | 2024-08-23 | 苏州迈正科技有限公司 | 传送载板、真空镀膜设备及真空镀膜方法 |
CN111477582A (zh) * | 2020-05-28 | 2020-07-31 | 深圳市捷佳伟创新能源装备股份有限公司 | 硅片的工艺腔体、硅片加工设备和硅片加工方法 |
CN111519169A (zh) * | 2020-05-28 | 2020-08-11 | 深圳市捷佳伟创新能源装备股份有限公司 | 顶升装置和物料加工设备 |
CN114188206B (zh) * | 2020-09-15 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理装置及其上电极组件的调节方法 |
US11508590B2 (en) * | 2021-04-15 | 2022-11-22 | Jnk Tech | Substrate inspection system and method of use thereof |
US11987884B2 (en) | 2021-04-15 | 2024-05-21 | Jnk Tech | Glass and wafer inspection system and a method of use thereof |
CN113757245B (zh) * | 2021-08-31 | 2022-05-20 | 中国科学院西安光学精密机械研究所 | 一种适用于低温光学系统的单限位螺垫及其使用方法 |
CN115247245B (zh) * | 2021-11-05 | 2024-02-02 | 徐州瑞马智能技术有限公司 | 一种钢管前处理洗料自动换挂装置 |
CN115910873A (zh) * | 2022-12-07 | 2023-04-04 | 西安奕斯伟材料科技有限公司 | 硅片检测工具及硅片检测方法 |
KR20240112643A (ko) * | 2023-01-12 | 2024-07-19 | 주식회사 한화 | 태양 전지 제조 장치 및 태양 전지 제조 방법 |
US20240352584A1 (en) * | 2023-04-20 | 2024-10-24 | Applied Materials, Inc. | Non-axisymmetric gas diffuser for plasma enhanced chemical vapor deposition |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06128750A (ja) * | 1992-10-20 | 1994-05-10 | Ulvac Japan Ltd | 真空処理装置の高周波電極 |
JPH11323553A (ja) * | 1998-02-19 | 1999-11-26 | Leybold Syst Gmbh | エアロック装置 |
JP2000119842A (ja) * | 1998-10-16 | 2000-04-25 | Nippon Pillar Packing Co Ltd | 耐摩耗性材料、および摺動部材 |
JP2001284271A (ja) * | 2000-01-20 | 2001-10-12 | Applied Materials Inc | プラズマチャンバ用の可撓的に吊り下げられたガス分配マニホールド |
JP2002045683A (ja) * | 2000-08-08 | 2002-02-12 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2005256172A (ja) * | 2004-02-24 | 2005-09-22 | Applied Materials Inc | 可動又は柔軟なシャワーヘッド取り付け |
JP2005277074A (ja) * | 2004-03-24 | 2005-10-06 | Kyocera Corp | ウェハ支持部材とその製造方法 |
JP2006121057A (ja) * | 2004-09-20 | 2006-05-11 | Applied Materials Inc | 拡散器重力支持体 |
JP2008078095A (ja) * | 2006-09-25 | 2008-04-03 | Tokki Corp | 真空プラズマ装置の接続構造 |
JP3151364U (ja) * | 2009-04-09 | 2009-06-18 | 株式会社島津製作所 | プラズマ化学気相堆積装置 |
Family Cites Families (223)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3158086A (en) * | 1960-03-21 | 1964-11-24 | Ralph E Weimer | Apparatus for charging hamburger patties onto a griddle |
JPS5647287Y2 (ja) | 1976-08-23 | 1981-11-05 | ||
JPS57180005A (en) | 1981-04-30 | 1982-11-05 | Hitachi Ltd | Silicon carbide electric insulator with low dielectric constant |
US4490042A (en) | 1981-06-04 | 1984-12-25 | Wyatt Philip J | Method for determining the properties of wine |
JPS57211746A (en) | 1981-06-23 | 1982-12-25 | Fujitsu Ltd | Wafer conveying apparatus |
US4694779A (en) | 1984-10-19 | 1987-09-22 | Tetron, Inc. | Reactor apparatus for semiconductor wafer processing |
JPS61105853A (ja) | 1984-10-30 | 1986-05-23 | Anelva Corp | オ−トロ−ダ− |
US4590042A (en) | 1984-12-24 | 1986-05-20 | Tegal Corporation | Plasma reactor having slotted manifold |
US4752180A (en) * | 1985-02-14 | 1988-06-21 | Kabushiki Kaisha Toshiba | Method and apparatus for handling semiconductor wafers |
DE3508516A1 (de) | 1985-03-09 | 1986-09-11 | Wolfgang 6108 Weiterstadt Köhler | Vorrichtung zum transportieren einer platte im reinraum |
US4612077A (en) | 1985-07-29 | 1986-09-16 | The Perkin-Elmer Corporation | Electrode for plasma etching system |
USH422H (en) * | 1986-04-25 | 1988-02-02 | American Telephone And Telegraph Company, At&T Bell Laboratories | Apparatus for inverting articles and method for using same |
JP2564303B2 (ja) | 1987-05-08 | 1996-12-18 | 株式会社日立製作所 | ウエハキャリア治具 |
US4854263B1 (en) | 1987-08-14 | 1997-06-17 | Applied Materials Inc | Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films |
JP2602298B2 (ja) | 1988-01-30 | 1997-04-23 | 日本電気株式会社 | 気相成長装置 |
US5606534A (en) * | 1989-09-01 | 1997-02-25 | Quantronix, Inc. | Laser-based dimensioning system |
US5084125A (en) | 1989-09-12 | 1992-01-28 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for producing semiconductor substrate |
US5167922A (en) | 1990-04-27 | 1992-12-01 | Pb Diagnostic Systems Inc. | Assay cartridge |
US5136975A (en) | 1990-06-21 | 1992-08-11 | Watkins-Johnson Company | Injector and method for delivering gaseous chemicals to a surface |
JP2938160B2 (ja) * | 1990-07-20 | 1999-08-23 | 東京エレクトロン株式会社 | 真空処理装置 |
JPH05109683A (ja) | 1991-03-27 | 1993-04-30 | Mitsubishi Materials Corp | 半導体シリコンウエーハ洗浄液の金属不純物除去方法 |
JPH0526252A (ja) * | 1991-07-16 | 1993-02-02 | Kayseven Co Ltd | 軸継手 |
JP2598353B2 (ja) | 1991-12-04 | 1997-04-09 | アネルバ株式会社 | 基板処理装置、基板搬送装置及び基板交換方法 |
JPH0569162U (ja) | 1992-02-28 | 1993-09-17 | セイコー電子工業株式会社 | バッファ付クラスタ形薄膜処理装置 |
US5404894A (en) | 1992-05-20 | 1995-04-11 | Tokyo Electron Kabushiki Kaisha | Conveyor apparatus |
JPH06155197A (ja) * | 1992-11-16 | 1994-06-03 | Pfu Ltd | 混流生産システムにおける部材供給システム |
KR100324792B1 (ko) | 1993-03-31 | 2002-06-20 | 히가시 데쓰로 | 플라즈마처리장치 |
US5439524A (en) | 1993-04-05 | 1995-08-08 | Vlsi Technology, Inc. | Plasma processing apparatus |
US5591269A (en) | 1993-06-24 | 1997-01-07 | Tokyo Electron Limited | Vacuum processing apparatus |
KR950020993A (ko) | 1993-12-22 | 1995-07-26 | 김광호 | 반도체 제조장치 |
US5589002A (en) | 1994-03-24 | 1996-12-31 | Applied Materials, Inc. | Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing |
JP3666512B2 (ja) | 1994-06-16 | 2005-06-29 | ローム株式会社 | 薄板基板の移送装置 |
US5795399A (en) * | 1994-06-30 | 1998-08-18 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing apparatus, method for removing reaction product, and method of suppressing deposition of reaction product |
US5486080A (en) | 1994-06-30 | 1996-01-23 | Diamond Semiconductor Group, Inc. | High speed movement of workpieces in vacuum processing |
TW295677B (ja) * | 1994-08-19 | 1997-01-11 | Tokyo Electron Co Ltd | |
US5551327A (en) | 1994-08-22 | 1996-09-03 | Hamby; William D. | Adjusting means for multi-blade cutting apparatus |
JPH0878347A (ja) | 1994-09-06 | 1996-03-22 | Komatsu Electron Metals Co Ltd | エピタキシャル成長装置のサセプタ |
US5746875A (en) | 1994-09-16 | 1998-05-05 | Applied Materials, Inc. | Gas injection slit nozzle for a plasma process reactor |
JP2929948B2 (ja) | 1994-09-20 | 1999-08-03 | 三菱電機株式会社 | プローブ式テストハンドラー及びそれを用いたicのテスト方法 |
US5885356A (en) | 1994-11-30 | 1999-03-23 | Applied Materials, Inc. | Method of reducing residue accumulation in CVD chamber using ceramic lining |
US5558717A (en) | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
JP3151364B2 (ja) * | 1994-12-05 | 2001-04-03 | シャープ株式会社 | 高分子光導波路の製造方法 |
JP3360098B2 (ja) | 1995-04-20 | 2002-12-24 | 東京エレクトロン株式会社 | 処理装置のシャワーヘッド構造 |
JP3165348B2 (ja) | 1995-05-18 | 2001-05-14 | ワイエイシイ株式会社 | プラズマ処理装置およびその運転方法 |
TW318258B (ja) | 1995-12-12 | 1997-10-21 | Tokyo Electron Co Ltd | |
JP3606979B2 (ja) | 1995-12-22 | 2005-01-05 | 株式会社アルバック | 枚葉式真空処理装置 |
US5855468A (en) * | 1995-12-22 | 1999-01-05 | Navistar International Transportation Corp. | Method and apparatus for setting foundry core assemblies |
US5756155A (en) | 1996-01-22 | 1998-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Combination nozzle and vacuum hood that is self cleaning |
US5679055A (en) | 1996-05-31 | 1997-10-21 | Memc Electronic Materials, Inc. | Automated wafer lapping system |
US5996528A (en) | 1996-07-02 | 1999-12-07 | Novellus Systems, Inc. | Method and apparatus for flowing gases into a manifold at high potential |
US5944940A (en) | 1996-07-09 | 1999-08-31 | Gamma Precision Technology, Inc. | Wafer transfer system and method of using the same |
US5846332A (en) | 1996-07-12 | 1998-12-08 | Applied Materials, Inc. | Thermally floating pedestal collar in a chemical vapor deposition chamber |
US5653808A (en) | 1996-08-07 | 1997-08-05 | Macleish; Joseph H. | Gas injection system for CVD reactors |
US6217662B1 (en) | 1997-03-24 | 2001-04-17 | Cree, Inc. | Susceptor designs for silicon carbide thin films |
JPH10321564A (ja) | 1997-05-20 | 1998-12-04 | Tokyo Seimitsu Co Ltd | ウェーハ回収装置 |
US5968275A (en) | 1997-06-25 | 1999-10-19 | Lam Research Corporation | Methods and apparatus for passivating a substrate in a plasma reactor |
JP3480271B2 (ja) * | 1997-10-07 | 2003-12-15 | 東京エレクトロン株式会社 | 熱処理装置のシャワーヘッド構造 |
US6722834B1 (en) | 1997-10-08 | 2004-04-20 | Applied Materials, Inc. | Robot blade with dual offset wafer supports |
JP3283459B2 (ja) * | 1997-12-17 | 2002-05-20 | 日本エー・エス・エム株式会社 | 半導体処理用の基板保持装置 |
JP4346700B2 (ja) | 1998-01-12 | 2009-10-21 | 株式会社半導体エネルギー研究所 | 光電変換装置の作製方法 |
US6050506A (en) | 1998-02-13 | 2000-04-18 | Applied Materials, Inc. | Pattern of apertures in a showerhead for chemical vapor deposition |
US6517303B1 (en) * | 1998-05-20 | 2003-02-11 | Applied Komatsu Technology, Inc. | Substrate transfer shuttle |
US6086362A (en) * | 1998-05-20 | 2000-07-11 | Applied Komatsu Technology, Inc. | Multi-function chamber for a substrate processing system |
US6176668B1 (en) * | 1998-05-20 | 2001-01-23 | Applied Komatsu Technology, Inc. | In-situ substrate transfer shuttle |
US6202589B1 (en) | 1998-05-29 | 2001-03-20 | Advanced Micro Devices, Inc. | Grounding mechanism which maintains a low resistance electrical ground path between a plate electrode and an etch chamber |
US6148761A (en) | 1998-06-16 | 2000-11-21 | Applied Materials, Inc. | Dual channel gas distribution plate |
US6016611A (en) * | 1998-07-13 | 2000-01-25 | Applied Komatsu Technology, Inc. | Gas flow control in a substrate processing system |
US6036422A (en) * | 1998-07-20 | 2000-03-14 | The Aerospace Corporation | Roller washer bearing and method |
US6022178A (en) * | 1998-07-20 | 2000-02-08 | The Aerospace Corporation | Flexure washer bearing and method |
US6517691B1 (en) | 1998-08-20 | 2003-02-11 | Intevac, Inc. | Substrate processing system |
TW432452B (en) | 1998-10-15 | 2001-05-01 | Applied Materials Inc | Detection of wafer fragments in a wafer processing apparatus |
US6210067B1 (en) * | 1998-12-14 | 2001-04-03 | The Aerospace Corporation | Clip flexure slider washer bearing |
US6267839B1 (en) | 1999-01-12 | 2001-07-31 | Applied Materials, Inc. | Electrostatic chuck with improved RF power distribution |
JP4204128B2 (ja) | 1999-01-18 | 2009-01-07 | 東京応化工業株式会社 | 基板搬送装置及び基板搬送方法 |
JP2000223546A (ja) * | 1999-02-02 | 2000-08-11 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
US6323616B1 (en) | 1999-03-15 | 2001-11-27 | Berkeley Process Control, Inc. | Self teaching robotic wafer handling system |
JP2000290777A (ja) | 1999-04-07 | 2000-10-17 | Tokyo Electron Ltd | ガス処理装置、バッフル部材、及びガス処理方法 |
JP3398936B2 (ja) * | 1999-04-09 | 2003-04-21 | 日本エー・エス・エム株式会社 | 半導体処理装置 |
JP3965258B2 (ja) | 1999-04-30 | 2007-08-29 | 日本碍子株式会社 | 半導体製造装置用のセラミックス製ガス供給構造 |
US6486444B1 (en) * | 1999-06-03 | 2002-11-26 | Applied Materials, Inc. | Load-lock with external staging area |
US6156124A (en) | 1999-06-18 | 2000-12-05 | Applied Materials, Inc. | Wafer transfer station for a chemical mechanical polisher |
US6245192B1 (en) | 1999-06-30 | 2001-06-12 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
US6206972B1 (en) | 1999-07-08 | 2001-03-27 | Genus, Inc. | Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes |
US6556715B1 (en) * | 1999-10-29 | 2003-04-29 | Unisys Corporation | Method for CCITT compression of image data |
US6558509B2 (en) | 1999-11-30 | 2003-05-06 | Applied Materials, Inc. | Dual wafer load lock |
JP4526151B2 (ja) | 2000-01-28 | 2010-08-18 | キヤノンアネルバ株式会社 | 基板処理装置の基板移載装置 |
JP2003529926A (ja) | 2000-03-30 | 2003-10-07 | 東京エレクトロン株式会社 | プラズマ処理システム内への調整可能なガス注入のための方法及び装置 |
JP2001284258A (ja) | 2000-03-30 | 2001-10-12 | Hitachi Kokusai Electric Inc | 半導体製造装置 |
US6502530B1 (en) | 2000-04-26 | 2003-01-07 | Unaxis Balzers Aktiengesellschaft | Design of gas injection for the electrode in a capacitively coupled RF plasma reactor |
US6875640B1 (en) * | 2000-06-08 | 2005-04-05 | Micron Technology, Inc. | Stereolithographic methods for forming a protective layer on a semiconductor device substrate and substrates including protective layers so formed |
KR100332314B1 (ko) | 2000-06-24 | 2002-04-12 | 서성기 | 박막증착용 반응용기 |
US6302965B1 (en) | 2000-08-15 | 2001-10-16 | Applied Materials, Inc. | Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces |
TWI246382B (en) * | 2000-11-08 | 2005-12-21 | Orbotech Ltd | Multi-layer printed circuit board fabrication system and method |
JP2002203885A (ja) | 2000-12-27 | 2002-07-19 | Anelva Corp | インターバック型基板処理装置 |
DE60231601D1 (de) | 2001-01-22 | 2009-04-30 | Tokio Electron Ltd | Einrichtung und verfahren zur behandlung |
JP2002256439A (ja) * | 2001-03-06 | 2002-09-11 | Hitachi Kokusai Electric Inc | 基板処理装置 |
KR100421036B1 (ko) | 2001-03-13 | 2004-03-03 | 삼성전자주식회사 | 웨이퍼 처리 장치 및 이를 이용한 웨이퍼 처리 방법 |
JP2002270880A (ja) | 2001-03-14 | 2002-09-20 | Shin Etsu Handotai Co Ltd | 太陽電池モジュール及びその製造方法 |
JP4222589B2 (ja) | 2001-03-26 | 2009-02-12 | キヤノンアネルバ株式会社 | 基板搬送装置及びそれを用いた基板処理装置 |
JP2003007682A (ja) | 2001-06-25 | 2003-01-10 | Matsushita Electric Ind Co Ltd | プラズマ処理装置用の電極部材 |
US20030003767A1 (en) * | 2001-06-29 | 2003-01-02 | Plasmion Corporation | High throughput hybrid deposition system and method using the same |
US6592679B2 (en) | 2001-07-13 | 2003-07-15 | Asyst Technologies, Inc. | Clean method for vacuum holding of substrates |
JP2003028142A (ja) | 2001-07-19 | 2003-01-29 | Konica Corp | 位置決め機構および画像形成装置 |
TWI224815B (en) * | 2001-08-01 | 2004-12-01 | Tokyo Electron Ltd | Gas processing apparatus and gas processing method |
JP2003059999A (ja) | 2001-08-14 | 2003-02-28 | Tokyo Electron Ltd | 処理システム |
CN1996552B (zh) | 2001-08-31 | 2012-09-05 | 克罗辛自动化公司 | 晶片机 |
JP4061044B2 (ja) * | 2001-10-05 | 2008-03-12 | 住友重機械工業株式会社 | 基板移動装置 |
US6719517B2 (en) | 2001-12-04 | 2004-04-13 | Brooks Automation | Substrate processing apparatus with independently configurable integral load locks |
US6729824B2 (en) | 2001-12-14 | 2004-05-04 | Applied Materials, Inc. | Dual robot processing system |
US6586886B1 (en) | 2001-12-19 | 2003-07-01 | Applied Materials, Inc. | Gas distribution plate electrode for a plasma reactor |
US20040060514A1 (en) | 2002-01-25 | 2004-04-01 | Applied Materials, Inc. A Delaware Corporation | Gas distribution showerhead |
US6793733B2 (en) | 2002-01-25 | 2004-09-21 | Applied Materials Inc. | Gas distribution showerhead |
JP2003258058A (ja) | 2002-02-27 | 2003-09-12 | Anelva Corp | 基板処理装置の運転方法 |
JP4220173B2 (ja) * | 2002-03-26 | 2009-02-04 | 株式会社日立ハイテクノロジーズ | 基板の搬送方法 |
JP2003282462A (ja) | 2002-03-27 | 2003-10-03 | Kyocera Corp | シャワープレートとその製造方法及びそれを用いたシャワーヘッド |
JP2003338492A (ja) | 2002-05-21 | 2003-11-28 | Tokyo Electron Ltd | プラズマ処理装置 |
WO2003100848A1 (fr) * | 2002-05-23 | 2003-12-04 | Anelva Corporation | Dispositif et procede de traitement de substrats |
US7217336B2 (en) | 2002-06-20 | 2007-05-15 | Tokyo Electron Limited | Directed gas injection apparatus for semiconductor processing |
US6902647B2 (en) | 2002-08-29 | 2005-06-07 | Asm International N.V. | Method of processing substrates with integrated weighing steps |
US6821563B2 (en) | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
US20040082251A1 (en) * | 2002-10-29 | 2004-04-29 | Applied Materials, Inc. | Apparatus for adjustable gas distribution for semiconductor substrate processing |
KR101052319B1 (ko) * | 2002-11-15 | 2011-07-27 | 가부시키가이샤 에바라 세이사꾸쇼 | 기판처리장치 및 기판처리방법 |
JP3886046B2 (ja) | 2002-12-18 | 2007-02-28 | シャープ株式会社 | プラズマcvd装置と、それを用いた成膜方法および半導体装置の製造方法 |
US7270713B2 (en) | 2003-01-07 | 2007-09-18 | Applied Materials, Inc. | Tunable gas distribution plate assembly |
US6917755B2 (en) * | 2003-02-27 | 2005-07-12 | Applied Materials, Inc. | Substrate support |
JP4197129B2 (ja) * | 2003-03-19 | 2008-12-17 | シャープ株式会社 | ワーク搬送装置 |
US6942753B2 (en) * | 2003-04-16 | 2005-09-13 | Applied Materials, Inc. | Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition |
JP2004327761A (ja) * | 2003-04-25 | 2004-11-18 | Sumitomo Mitsubishi Silicon Corp | エピタキシャル成長用サセプタ |
US7010388B2 (en) | 2003-05-22 | 2006-03-07 | Axcelis Technologies, Inc. | Work-piece treatment system having load lock and buffer |
JP2005016582A (ja) * | 2003-06-24 | 2005-01-20 | Toshiba Medical System Co Ltd | 上下動機構および寝台 |
JP4517595B2 (ja) | 2003-06-26 | 2010-08-04 | 東京エレクトロン株式会社 | 被処理体の搬送方法 |
US20050011447A1 (en) | 2003-07-14 | 2005-01-20 | Tokyo Electron Limited | Method and apparatus for delivering process gas to a process chamber |
KR100999104B1 (ko) * | 2003-10-01 | 2010-12-07 | 삼성전자주식회사 | 기판의 반송장치 |
US7827930B2 (en) | 2004-01-26 | 2010-11-09 | Applied Materials, Inc. | Apparatus for electroless deposition of metals onto semiconductor substrates |
US7214027B2 (en) | 2003-10-16 | 2007-05-08 | Varian Semiconductor Equipment Associates, Inc. | Wafer handler method and system |
US8403613B2 (en) * | 2003-11-10 | 2013-03-26 | Brooks Automation, Inc. | Bypass thermal adjuster for vacuum semiconductor processing |
US20070282480A1 (en) * | 2003-11-10 | 2007-12-06 | Pannese Patrick D | Methods and systems for controlling a semiconductor fabrication process |
CN1890074B (zh) * | 2003-12-04 | 2011-03-30 | 三星钻石工业股份有限公司 | 基板加工方法、基板加工装置、基板输送方法、基板输送机构 |
JP2005183834A (ja) | 2003-12-22 | 2005-07-07 | Toshiba Ceramics Co Ltd | バレル型サセプタ |
US7892357B2 (en) | 2004-01-12 | 2011-02-22 | Axcelis Technologies, Inc. | Gas distribution plate assembly for plasma reactors |
JP2005211865A (ja) | 2004-02-02 | 2005-08-11 | Masato Toshima | プラズマ処理装置 |
JP4707959B2 (ja) | 2004-02-20 | 2011-06-22 | 日本エー・エス・エム株式会社 | シャワープレート、プラズマ処理装置及びプラズマ処理方法 |
US7905960B2 (en) * | 2004-03-24 | 2011-03-15 | Jusung Engineering Co., Ltd. | Apparatus for manufacturing substrate |
US7290978B2 (en) * | 2004-06-09 | 2007-11-06 | N&K Technology Inc. | Photomask flipper and single direction inspection device for dual side photomask inspection |
KR101023725B1 (ko) | 2004-06-29 | 2011-03-25 | 엘지디스플레이 주식회사 | 이재 로봇 |
JP2006049544A (ja) | 2004-08-04 | 2006-02-16 | Canon Anelva Corp | 基板処理装置及びこれを用いた基板処理方法 |
JP2006054284A (ja) * | 2004-08-11 | 2006-02-23 | Shimadzu Corp | 真空処理装置 |
JP2006058769A (ja) | 2004-08-23 | 2006-03-02 | Sony Corp | 沈胴式レンズ鏡筒および撮像装置 |
US20060137609A1 (en) | 2004-09-13 | 2006-06-29 | Puchacz Jerzy P | Multi-single wafer processing apparatus |
US7429410B2 (en) * | 2004-09-20 | 2008-09-30 | Applied Materials, Inc. | Diffuser gravity support |
JP2006132579A (ja) * | 2004-11-02 | 2006-05-25 | Tokyo Electron Ltd | ボルト及びプラズマ処理装置 |
JP2006173560A (ja) | 2004-11-16 | 2006-06-29 | Sumitomo Electric Ind Ltd | ウエハガイド、有機金属気相成長装置および窒化物系半導体を堆積する方法 |
US20060124169A1 (en) * | 2004-12-09 | 2006-06-15 | Tokyo Electron Limited | Gas supply unit, substrate processing apparatus, and supply gas setting method |
US20060177288A1 (en) * | 2005-02-09 | 2006-08-10 | Parker N W | Multiple loadlocks and processing chamber |
KR100747735B1 (ko) | 2005-05-13 | 2007-08-09 | 주식회사 테스 | 반도체 제조 장치 |
JP4596981B2 (ja) * | 2005-05-24 | 2010-12-15 | 株式会社日立ハイテクノロジーズ | インプリント装置、及び微細構造転写方法 |
US20070017445A1 (en) * | 2005-07-19 | 2007-01-25 | Takako Takehara | Hybrid PVD-CVD system |
JP2007112626A (ja) * | 2005-09-20 | 2007-05-10 | Olympus Corp | 基板搬送装置及び基板検査装置並びに基板搬送方法 |
JP2007123684A (ja) | 2005-10-31 | 2007-05-17 | Masato Toshima | 基板の処理装置 |
US20070119393A1 (en) | 2005-11-28 | 2007-05-31 | Ashizawa Kengo | Vacuum processing system |
US20070151516A1 (en) | 2006-01-03 | 2007-07-05 | Law Kam S | Chemical vapor deposition apparatus and electrode plate thereof |
CN101360988B (zh) | 2006-01-18 | 2016-01-20 | 应用材料公司 | 动态侦测移动基材损毁和偏位的传感器 |
JP4915985B2 (ja) | 2006-02-06 | 2012-04-11 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
US7896967B2 (en) * | 2006-02-06 | 2011-03-01 | Tokyo Electron Limited | Gas supply system, substrate processing apparatus and gas supply method |
JP2007242648A (ja) | 2006-03-04 | 2007-09-20 | Masato Toshima | 基板の処理装置 |
US8268078B2 (en) | 2006-03-16 | 2012-09-18 | Tokyo Electron Limited | Method and apparatus for reducing particle contamination in a deposition system |
TWI476855B (zh) | 2006-05-03 | 2015-03-11 | Gen Co Ltd | 基板傳輸設備、和使用該設備的高速基板處理系統 |
JP4018120B2 (ja) | 2006-05-12 | 2007-12-05 | シャープ株式会社 | 液滴吐出描画装置 |
EP1855324A1 (de) | 2006-05-12 | 2007-11-14 | Applied Materials GmbH & Co. KG | Substratträger aus glaskeramischen Material |
KR101346081B1 (ko) * | 2006-06-20 | 2013-12-31 | 참엔지니어링(주) | 플라스마 에칭 챔버 |
US20080066683A1 (en) | 2006-09-19 | 2008-03-20 | General Electric Company | Assembly with Enhanced Thermal Uniformity and Method For Making Thereof |
US7854820B2 (en) | 2006-10-16 | 2010-12-21 | Lam Research Corporation | Upper electrode backing member with particle reducing features |
US7482550B2 (en) | 2006-10-16 | 2009-01-27 | Lam Research Corporation | Quartz guard ring |
TW200900210A (en) | 2006-11-09 | 2009-01-01 | Ihi Corp | Frog-leg arm robot and control method thereof |
JP4992910B2 (ja) * | 2006-12-05 | 2012-08-08 | 株式会社島津製作所 | 基板検査装置 |
US7949425B2 (en) | 2006-12-06 | 2011-05-24 | Axcelis Technologies, Inc. | High throughput wafer notch aligner |
US20080138178A1 (en) | 2006-12-06 | 2008-06-12 | Axcelis Technologies,Inc. | High throughput serial wafer handling end station |
KR101464227B1 (ko) | 2007-01-12 | 2014-11-21 | 비코 인스트루먼츠 인코포레이티드 | 가스 처리 시스템 |
JP5047644B2 (ja) * | 2007-01-31 | 2012-10-10 | 東京エレクトロン株式会社 | プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体 |
JP2008205219A (ja) | 2007-02-20 | 2008-09-04 | Masato Toshima | シャワーヘッドおよびこれを用いたcvd装置 |
CN101636522B (zh) * | 2007-03-02 | 2011-11-30 | 欧瑞康太阳能股份公司(特吕巴赫) | 真空涂覆装置 |
KR100927621B1 (ko) * | 2007-03-22 | 2009-11-20 | 삼성에스디아이 주식회사 | 보호막층을 증착시키는 장치와, 이를 이용한 증착 방법 |
US8069817B2 (en) * | 2007-03-30 | 2011-12-06 | Lam Research Corporation | Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses |
KR101142760B1 (ko) * | 2007-05-31 | 2012-05-08 | 가부시키가이샤 아드반테스트 | 프로브 카드의 고정장치 |
US7923660B2 (en) * | 2007-08-15 | 2011-04-12 | Applied Materials, Inc. | Pulsed laser anneal system architecture |
US8408858B2 (en) | 2007-08-30 | 2013-04-02 | Ascentool International Limited | Substrate processing system having improved substrate transport system |
US7806641B2 (en) * | 2007-08-30 | 2010-10-05 | Ascentool, Inc. | Substrate processing system having improved substrate transport system |
GB0717489D0 (en) | 2007-09-08 | 2007-10-17 | Design Factor Ni The Ltd | A Glass breaking device |
US7976631B2 (en) | 2007-10-16 | 2011-07-12 | Applied Materials, Inc. | Multi-gas straight channel showerhead |
US20090095221A1 (en) | 2007-10-16 | 2009-04-16 | Alexander Tam | Multi-gas concentric injection showerhead |
US20090095222A1 (en) | 2007-10-16 | 2009-04-16 | Alexander Tam | Multi-gas spiral channel showerhead |
JP5330721B2 (ja) * | 2007-10-23 | 2013-10-30 | オルボテック エルティ ソラー,エルエルシー | 処理装置および処理方法 |
CA2701402A1 (en) * | 2007-10-24 | 2009-04-30 | Oc Oerlikon Balzers Ag | Method for manufacturing workpieces and apparatus |
CN101809709B (zh) * | 2007-11-15 | 2014-04-30 | 株式会社尼康 | 掩模盒、搬送装置、曝光装置、掩模搬送方法及器件制造方法 |
US8876024B2 (en) | 2008-01-10 | 2014-11-04 | Applied Materials, Inc. | Heated showerhead assembly |
JP2009174236A (ja) * | 2008-01-28 | 2009-08-06 | Kuwata:Kk | 免制震補助具、その使用方法及び連結構造 |
DE102008009090B3 (de) * | 2008-02-14 | 2009-06-04 | MAG Industrial Automation Systems, LLC., Sterling Heights | Beschickungs- und Entnahme-Anlage für Werkzeug-Maschinen |
EP2261391B1 (en) | 2008-03-25 | 2017-11-15 | Orbotech LT Solar, LLC | Processing apparatus and processing method |
JP5434910B2 (ja) * | 2008-03-27 | 2014-03-05 | 株式会社ニコン | 接合装置および接合方法 |
JP4472005B2 (ja) * | 2008-04-24 | 2010-06-02 | キヤノンアネルバ株式会社 | 真空処理装置及び真空処理方法 |
WO2009130790A1 (ja) * | 2008-04-25 | 2009-10-29 | キヤノンアネルバ株式会社 | トレイ搬送式インライン成膜装置 |
CN102099907B (zh) * | 2008-07-15 | 2014-04-02 | 株式会社爱发科 | 工件传送系统和方法 |
TW201027784A (en) * | 2008-10-07 | 2010-07-16 | Applied Materials Inc | Advanced platform for processing crystalline silicon solar cells |
KR101641130B1 (ko) | 2008-10-09 | 2016-07-20 | 어플라이드 머티어리얼스, 인코포레이티드 | 대형 플라즈마 처리 챔버를 위한 rf 복귀 경로 |
US20100136261A1 (en) | 2008-12-03 | 2010-06-03 | Applied Materials, Inc. | Modulation of rf returning straps for uniformity control |
TWI366546B (en) | 2009-01-09 | 2012-06-21 | Chimei Innolux Corp | Transmission apparatus |
CN102308675B (zh) | 2009-02-04 | 2016-01-13 | 应用材料公司 | 用于等离子体工艺的接地回流路径 |
US20100203242A1 (en) * | 2009-02-06 | 2010-08-12 | Applied Materials, Inc. | self-cleaning susceptor for solar cell processing |
US8287648B2 (en) * | 2009-02-09 | 2012-10-16 | Asm America, Inc. | Method and apparatus for minimizing contamination in semiconductor processing chamber |
US8246284B2 (en) * | 2009-03-05 | 2012-08-21 | Applied Materials, Inc. | Stacked load-lock apparatus and method for high throughput solar cell manufacturing |
ITUD20090214A1 (it) | 2009-11-24 | 2011-05-25 | Applied Materials Inc | Effettore d'estremita' per la manipolazione di substrati |
TWM366667U (en) | 2009-05-25 | 2009-10-11 | Aidc Aerospace Ind Dev Corp | Auto movement and inspection device for solar energy panel |
US8894767B2 (en) | 2009-07-15 | 2014-11-25 | Applied Materials, Inc. | Flow control features of CVD chambers |
US8454850B2 (en) | 2009-09-02 | 2013-06-04 | Air Products And Chemicals, Inc. | Method for the removal of surface oxides by electron attachment |
RU2515512C2 (ru) | 2009-09-28 | 2014-05-10 | Манфред ШВАЙГЕР-ШАХ | Устройство для похудения путем улучшения кровотока в коже |
TWI430714B (zh) | 2009-10-15 | 2014-03-11 | Orbotech Lt Solar Llc | 電漿處理腔之噴撒頭組件及電漿處理腔之噴撒頭組件之氣體電離板之製備方法 |
TWI436831B (zh) | 2009-12-10 | 2014-05-11 | Orbotech Lt Solar Llc | 真空處理裝置之噴灑頭總成 |
KR101329303B1 (ko) * | 2010-06-17 | 2013-11-20 | 세메스 주식회사 | 기판들의 로딩 및 언로딩을 위한 기판 처리 장치 |
US20110315081A1 (en) | 2010-06-25 | 2011-12-29 | Law Kam S | Susceptor for plasma processing chamber |
US20120267049A1 (en) | 2011-04-25 | 2012-10-25 | Craig Lyle Stevens | Grounding assembly for vacuum processing apparatus |
KR20120131105A (ko) | 2011-05-24 | 2012-12-04 | 오보텍 엘티 솔라 엘엘씨 | 손상된 웨이퍼 복구 시스템 |
US8459276B2 (en) | 2011-05-24 | 2013-06-11 | Orbotech LT Solar, LLC. | Broken wafer recovery system |
WO2014035768A1 (en) | 2012-08-30 | 2014-03-06 | Orbotech Lt Solar, Inc. | System, architecture and method for simultaneous transfer and process of substrates |
-
2010
- 2010-12-09 TW TW099143044A patent/TWI436831B/zh active
- 2010-12-09 TW TW099143048A patent/TWI485799B/zh not_active IP Right Cessation
- 2010-12-09 JP JP2010275101A patent/JP5721132B2/ja active Active
- 2010-12-09 TW TW099143051A patent/TWI417984B/zh not_active IP Right Cessation
- 2010-12-09 JP JP2010275100A patent/JP5835722B2/ja not_active Expired - Fee Related
- 2010-12-10 US US12/965,798 patent/US8444364B2/en active Active
- 2010-12-10 US US12/965,791 patent/US8672603B2/en active Active
- 2010-12-10 CN CN201010624484.9A patent/CN102094188B/zh active Active
- 2010-12-10 EP EP10194536.8A patent/EP2336389B1/en active Active
- 2010-12-10 US US12/965,804 patent/US20110139372A1/en not_active Abandoned
- 2010-12-10 KR KR1020100126497A patent/KR101732348B1/ko active IP Right Grant
- 2010-12-10 CN CN201010625048.3A patent/CN102122610B/zh active Active
- 2010-12-10 EP EP10194527.7A patent/EP2333814B1/en not_active Not-in-force
- 2010-12-10 KR KR1020100126107A patent/KR101814202B1/ko active IP Right Grant
- 2010-12-10 CN CN201010625047.9A patent/CN102122609B/zh active Active
- 2010-12-10 KR KR1020100126495A patent/KR101730322B1/ko active IP Right Grant
- 2010-12-10 EP EP10194525.1A patent/EP2333813B1/en active Active
-
2013
- 2013-05-20 US US13/898,353 patent/US9287152B2/en not_active Expired - Fee Related
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06128750A (ja) * | 1992-10-20 | 1994-05-10 | Ulvac Japan Ltd | 真空処理装置の高周波電極 |
JPH11323553A (ja) * | 1998-02-19 | 1999-11-26 | Leybold Syst Gmbh | エアロック装置 |
JP2000119842A (ja) * | 1998-10-16 | 2000-04-25 | Nippon Pillar Packing Co Ltd | 耐摩耗性材料、および摺動部材 |
JP2001284271A (ja) * | 2000-01-20 | 2001-10-12 | Applied Materials Inc | プラズマチャンバ用の可撓的に吊り下げられたガス分配マニホールド |
JP2002045683A (ja) * | 2000-08-08 | 2002-02-12 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2005256172A (ja) * | 2004-02-24 | 2005-09-22 | Applied Materials Inc | 可動又は柔軟なシャワーヘッド取り付け |
JP2005277074A (ja) * | 2004-03-24 | 2005-10-06 | Kyocera Corp | ウェハ支持部材とその製造方法 |
JP2006121057A (ja) * | 2004-09-20 | 2006-05-11 | Applied Materials Inc | 拡散器重力支持体 |
JP2008078095A (ja) * | 2006-09-25 | 2008-04-03 | Tokki Corp | 真空プラズマ装置の接続構造 |
JP3151364U (ja) * | 2009-04-09 | 2009-06-18 | 株式会社島津製作所 | プラズマ化学気相堆積装置 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8444364B2 (en) | 2009-12-10 | 2013-05-21 | Orbotech LT Solar, LLC. | Auto-sequencing multi-directional inline processing apparatus |
US8672603B2 (en) | 2009-12-10 | 2014-03-18 | Orbotech LT Solar, LLC. | Auto-sequencing inline processing apparatus |
JP2014227606A (ja) * | 2013-05-24 | 2014-12-08 | 上海和輝光電有限公司Everdisplay Optronics (Shanghai) Limited | 分散板 |
JP2017022295A (ja) * | 2015-07-14 | 2017-01-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
CN111385955A (zh) * | 2018-12-28 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理器的安装结构及相应的等离子体处理器 |
JP7534049B2 (ja) | 2021-01-20 | 2024-08-14 | 東京エレクトロン株式会社 | 保持部材、上部電極アセンブリ、及びプラズマ処理装置 |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5721132B2 (ja) | 真空処理装置用シャワーヘッド・アセンブリ及び真空処理装置用シャワーヘッド・アセンブリを真空処理チャンバに締結する方法 | |
TWI276701B (en) | Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition | |
US11387137B2 (en) | Self-centering susceptor ring assembly | |
KR20040063828A (ko) | 가변식 가스 분배 플레이트 조립체 | |
KR102282723B1 (ko) | 엘라스토머 밴드용 설치 픽스처 | |
US20050183826A1 (en) | Showerheads for providing a gas to a substrate and apparatus and methods using the showerheads | |
US10294565B2 (en) | Substrate processing apparatus | |
TW201717251A (zh) | 用於化學氣相沈積之自定中心晶圓載具系統 | |
JP2006257495A (ja) | 基板保持部材及び基板処理装置 | |
JP2011165718A (ja) | ガスシャワー用の構造体及び基板処理装置 | |
TWI819137B (zh) | 用以減少粒子產生的氣體擴散器組件 | |
TW201310521A (zh) | 用於邊緣輪廓控制之具有邊緣氣體偏轉板的底座 | |
TWI740182B (zh) | 減少粒子產生的氣體擴散器支撐結構 | |
CN101728242B (zh) | 衬底处理设备 | |
KR20110049988A (ko) | 기판처리장치 | |
CN109930132A (zh) | 陶瓷环及具有陶瓷环的半导体反应腔体 | |
TWI722744B (zh) | 真空處理裝置 | |
US20220098737A1 (en) | Showerhead and substrate processing apparatus having the same | |
CN112086336A (zh) | 半导体工艺组件及半导体加工设备 | |
JP2011204754A (ja) | プラズマ処理装置用電極板及びプラズマ処理装置 | |
KR20120056342A (ko) | 플라스마 처리장치의 기판 홀더 | |
JP2016039282A (ja) | 基板処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110329 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20131206 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140418 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140520 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140815 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140916 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141114 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150127 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150130 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150224 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150318 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5721132 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |