TW432452B - Detection of wafer fragments in a wafer processing apparatus - Google Patents

Abstract

During a rapid thermal process, fragments can break away from a wafer and fall onto a temperature sensor in the process chamber. The wafer fragments can compromise the accuracy of the temperature signals generated by sensor probes. In particular, the fragments can attenuate or otherwise interfere with the radiation received from the wafer. This interference can undermine the accuracy of the temperature measurement signal generated by the probes. If the temperature control function is compromised, excessive temperature gradients can result in damage to the wafer, reducing device yield and degrading device quality. To alleviate the effects of wafer fragments, the presence of a wafer fragment is detected. An image acquisition device acquires an image of a wafer. A processor analyzes the acquired image to determine whether a wafer fragment is present. The processor analyzes the acquired image for optical density contrast changes indicative of the presence of a wafer fragment. Detection of a wafer fragment allows the rapid thermal process to be stopped so that the fragment can be cleared away prior to insertion of the next wafer into the deposition process chamber.

Description

43 245 Λ7 B7 Printed by the consumer cooperation of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Description of the Invention (^) Background of the Invention The present invention relates to the system and method for quality control of wafer 1M1, specifically in wafer procedures. There are many different technologies that can be used for wafer processing during semiconductor assembly manufacturing. For example, rapid thermal processing (RTp) is widely used in semiconductor manufacturing applications, where rapid thermal cycling is necessary. Examples of general rapid heat treatment applications include tempering, oxidation, and nitriding. The rapid thermal processing chamber typically includes a holder for placing a wafer to be processed, one or more heat sources, such as a filament, which can generate thermal radiation to heat the wafer, and a reflective plate which forms a reflective concave surface to increase heating efficiency. Temperature uniformity is the most important factor in the quality of rapid heat treatment. Different wafer regions will have different energy absorption or release characteristics. In addition, the spatial heating distribution of the heat source may be slightly uneven. Therefore, rapid thermal processing can produce a significant thermal gradient across the wafer surface. Excessive thermal gradients can cause structural damage to the wafer, directly impacting device yield and quality. Using a flat light heat source 'is often difficult to control the temperature of the entire substrate. However, using a condensing heat source, the temperature can be spatially controlled to more effectively reduce the thermal gradient across the wafer. In order to control the temperature of the entire wafer, especially the use of a concentrated heat source, a temperature sensing device is typically installed in the rapid thermal processing chamber. The temperature sensing device includes, for example, a temperature sensing probe such as a pyrometer. Temperature sensing devices typically sense wafer temperature at several locations during a heating cycle. The temperature signal generated by the temperature sensing device is processed to generate a control signal of the heat source. Therefore, the accuracy of the temperature signal provided by the temperature sensing device is -4-(Please read the precautions on the back before filling this page).

V-! Hi! The size of the paper is applicable to China National Standard (CNS) A ·! Specifications (210x 297 mm) // 1 Λ7 G7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Effective control is very important, 0 is an important factor for installation. Any temperature measurement is avoided. Inaccuracy will damage the temperature control function (political, the opening of the temperature gradient will damage the processed wafer. SUMMARY OF THE INVENTION The present invention is A system and method for slicing wafer fragments in a wafer processing device. This-system and method is very useful for maintaining the accuracy of a temperature control machine for the wafer deposition process. In particular, the application of wafer debris detection in the wafer deposition process Systems and methods. This—wafer fragments have a detrimental effect on the temperature measurement in the processing chamber. The system and method are particularly useful for procedures that require stringent temperature requirements, such as the quality of rapid heat treatment. Applications, however, there are many different wafer processing procedures that also pay attention to the presence of debris and are therefore not limited to rapid thermal processing. However, for ease of explanation, reference to rapid thermal processing Characteristics to illustrate specific experimental specific embodiments of the present invention. During rapid heat treatment, fragments will be cracked from the wafer and dropped to a temperature sense, device, or to the surface between the device and the wafer such as Reflective plate. Wafer fragments can impair the accuracy of the temperature signal generated by the temperature sensing device. For pyrometers, for example, wafer fragments can fall to the place where the probe is usually placed on the reflective plate. Wafer fragments can weaken or There are other influences on the infrared rays absorbed by the wafer. This effect will gradually damage the temperature measurement signal generated by the probe, and eventually destroy the temperature control function of the entire wafer surface. If the temperature control function is invalid, an excessive temperature gradient Will damage the wafer, reduce the yield of the device and reduce the quality of the device. Moreover, unless, for example, wafer fragments are removed from the reflective plate, the effect of the wafer fragments will continue to the subsequent wafers in the rapid thermal processing chamber 5- ^ --- ---- Λ // Μ -------- Order il ---- r --- line} · \ (Please read the precautions on the back before filling this page) This paper size _ 巾 _ Secret of home improvement (CNS) A4 (21Q χ 297 public love) 4324 5 2 Λ7 B7 V. Description of the invention (3 processing. In order to reduce the effect of wafer debris, sister-in-law & π ^ ν1ι failure, according to a specific embodiment of the present invention, must be detected on the temperature sensing device s 圚 up to eight m Add Guangyi to Shangyang 51. The possibility of existence ...

The use of mechanical vision technology can be a good tester a round A 1 shell 4 out of the round bang 爻. Image capture '' takes __ part of the image from & speed 4 processing to internal processing wafer. The image can be enlarged when the wafer is taken out of the rapid thermal processing room and placed in the observation room. The “becomes part of a subsequent processing station, such as a cooling chamber. The expanded image is analyzed to detect the defective part of the wafer. This-the defect is an indicator of fragmentation and the possibility of the presence of wafers in the rapid thermal processing room For example, it can analyze the optical pair between the same surface of the wafer and the wafer defect. In particular, during imaging, the wafer is placed in front of the light background that can provide the backlight of the wafer. Between the wafer surface and the bright background The optical comparison can provide an indicator of the possibility of wafer fragments on the surface of the wafer field trowel and / or the degree sensing device or between the wafer holder and the temperature measuring device. An optical density comparison can be performed by analyzing the crystal. The optical density of the day image of a circular image is detected by comparing the density with the target density range. When it is detected that a number of surrounding pixels have the necessary density range, the size of the area defined by the pixels can be analyzed. For example The size of the pixel area can be compared with another valve valve which is not suitable for the temperature measurement function I chip size. A Qiu Yuan chip detection can stop rapid heat treatment in order to remove debris in the rapid heat treatment room. For example, Recommendations can be generated from the detection of wafer fragments. This recommendation can be used as the basis for automatic chip removal, or as a notification to operators who manually interrupt. By removing the chips, the temperature sensation can be eliminated before processing the next wafer. Measure | _-6-Stone ^^ In use _ home standard (CNS > A4. Ο; installed. -------- order ---, .---- line. (Please read the note on the back first Please fill in this page again for matters) 4.3 24.5 2 Λ7 ~ -------! ___ V. Description of the invention (4) 'Possible sources of error in temperature measurement produced by the device. In this method, the temperature amount can be maintained The accuracy of the measurement can avoid the problems when the subsequent wafers are buried. This result can reduce the excessive temperature gradient that will reduce the yield and quality. In a specific embodiment, the present invention provides analysis of wafers on wafers. Debris system. The system includes an observation chamber, a crystal support element placed in the observation chamber, a built-in observation surface placed near the background surface of the wafer support element, and a wafer directly irradiating the wafer placed on the wafer support element. Illumination light source and wafer used to replace wafers on wafer support elements located opposite the background surface An image acquisition device for a part of an image. In another embodiment, the present invention provides a system for detecting wafer debris in a deposition processing chamber, the system including an edge light pattern of a wafer processed in the processing chamber. Illumination light source, an image capture device for capturing partial images instead of wafers, where the illumination light source provides backlighting on the edge of the wafer, and a processor that analyzes the captured image to detect defective parts of the wafer 'And generate recommendations when a defective portion of the wafer is detected. In another specific embodiment, the present invention provides a method for detecting wafer fragments on a wafer in a deposition processing chamber, the method comprising using a light pattern in the processing chamber Illuminate the edge area of the wafer processed by Zheng Jin in the processing room, and replace the part of the wafer placed on the background surface. The light pattern provides the backlight of the wafer edge, and the captured image is analyzed to detect Defective part of the wafer 'and make recommendations when a defective part of the wafer is detected. In another specific embodiment, the present invention provides a system for analyzing wafer fragments on a wafer. The system includes an observation room, a wafer supporting element placed in the observation room, and a light source adjacent to the front side of the wafer. The size of the paper around the circle is applicable to the Chinese National Standard (CNS) A4 specification (2) 〇X 297 public love) f Please read the > ± Issue on the back before filling in this page} Loading ------- Ordered, printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the Consumer Cooperatives of the Intellectually Deaf Property Bureau of the Ministry of Economic Affairs, printed by the Consumer Cooperatives of the Intellectually Deaf Property Bureau of the Ministry of Economic Affairs, 432452 Λ7 Illumination light, and an image capture device used to capture a part of the wafer located on the wafer support element and on the opposite side of the back purple surface. An image capture device for images. A system for analyzing wafer fragments on a wafer. The system includes an observation room, and a wafer support component placed in the observation room is placed on the background surface of the adjacent wafer support component in the observation room to capture a replacement table located on the wafer support component. The top of the wafer on the opposite side of the background surface The image capturing device for the image projects a light source for illuminating light in the observation room, and is placed in an illumination baffle in the observation room. The illumination baffle distinguishes the internal area from the external area. The lighting baffle substrate restricts the illumination light to the external area and the image. The visible area of the capturing device is limited to the inner area, and the outer area adjacent to the edge of the wafer is illuminated by illumination light to configure the outer area in such a way as to provide the back of the edge of the wafer. Identify the changes in the optical density contrast to analyze the wafer image, and use the changes in the optical density contrast to determine whether the wafer is defective. In particular, the analysis also includes identifying optics that have significant contrast with the optical density target range. The density comparison area, the size of the comparison area is estimated, the estimated size is compared with the threshold value, and the estimated size exceeding the threshold value is the detection result of the wafer defect portion. If the wafer on the background surface is used to capture Take the image, the target range of the optical density should correspond to the range including the background surface. In addition, the background surface can be illuminated. In a specific embodiment, the background surface adjacent to the edge portion of the wafer is illuminated to provide the backlight of the wafer. The illumination baffle is used to prevent the illumination light from entering the wafer (upper surface, so for any optical contrast for analysis) Better protection. In another specific embodiment, the light source can be placed near the back of the wafer -8- --------------------- I --- line, Jv (Please read the precautions on the back before filling this page) This paper ruler_ 财 x 297 / i ¥ 7 4 3 24 5 2 Λ7 H7 Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs The edge portion of one side 9 wafer is generally agricultural wafer fragments. Therefore, if necessary, only the edge portion can be analyzed. Therefore, the background portion of the wafer will cause the defective portion of the wafer edge There will be a sharp 1 contrast between the wafer and the wafer, and it is easy to find in the debris area. At the same time, the time required for image processing is minimized. ‘Based on the analysis of the optical density comparison, the size of the comparison area can be estimated relative to the size of possible wafer fragments. The estimated size is compared with the size of the valve cymbal, which may have an impact on warm shoulder measurement and control performance. In the example, the size of the contrast area is calculated in terms of the number of image pixels that exhibit the desired contrast. Compare the number of pixels with the number of pixels. If the size exceeds the width, a suggestion will be generated. Based on this-it is suggested that the operation of rapid heat treatment can be terminated at their own expense or manually. Other advantages, uses, and specific embodiments of the present invention will become apparent from the subsequent detailed description and patent application scope. Explanation of the drawing Figure 1 is a cross-sectional view of a rapid heat treatment chamber; block is a function of a system for detecting wafer fragments in a fast heat treatment chamber; FIG. 3 is a wound view of an observation chamber for analyzing wafers with a system equipped with a wafer backlight; Fig. 4 is an expanded view of the observation room as shown in Fig. 3; Fig. 5 is a perspective view of the observation component as shown in Fig. 3 · Fig. 6 is a top view of the observation component as shown in Fig. 3 Figure; " 9-I ----- — — — — — Λ \ · 丨 I ----- Order ---- I l · I-- (Please read the precautions on the back before filling this page ) This paper size applies 4 3 24 5 2 Λ7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (Figure 7 is a perspective view of the lighting baffle forming part of the observation room shown in Figure 3; Circle 8 A circle with a chip edge. Top-view circle; Circle 9 is a circle illustrating the process of detecting wafer fragments in a rapid thermal processing room; Figure 10 is a side view of an observation room equipped with another backlight system; Figure 11 is Top view of a wafer with a backlight system, as shown by circle 10. Similar numbers and notes in the legends indicate similarities. Detailed description of the specific embodiment FIG. 1 is a side view of the rapid heat treatment chamber_ 10. As shown in FIG. 1, the processing chamber 10 includes a bottom wall 12 2, an opposite side wall; [4 and 16 6, a top wall 1 g and front and rear walls (not shown in Figure 1). Walls 1, 2, 4, 16, 6 and 18 surround the heat source 20 'wafer holder 22 and reflector 24. Figure 1 further illustrates the wafer device in the wafer holder 22 above. Although shown as a single wafer 26 for illustration, the rapid thermal processing chamber 10 can be used to process more than two wafers. The processing chamber 丨 can include other conventional equipment commonly used in rapid thermal processing equipment. Such equipment It can include, for example, pumping equipment for pumping the second chamber, gas distribution lines that transfer processing gas to the processing chamber 10, and fixed heat sources 2 0 different fixtures and reflectors 2 4 0 heat sources 20 can use flat light sources Or the light source array shown in Figure 1> 8. The light sources 28 can be arranged in a one-dimensional array and can be individually controlled to locally heat the wafer 26. The surface of the 6 feet: Examples of rapid heat treatment systems that include space area light sources such as Yu Ge Gronet et al., US Patent No. 5,155,336 The light source 28 can be equipped with a reflection area to concentrate the heat on the wafer 26. The heat generated by the heat source 20 is absorbed by the wafer 26 during the processing. The reflection plate 24 is formed to be anti-10 degrees. Specifications (210x297 mm) ----: ------- · I ί ----— Order 1 ·! 1! .-- (Please read the notes on the back before filling this page) Ministry of Economic Affairs Member of the Intellectual Property BureauΗConsumer Cooperative Association * '1 ^ 4 3 24 5 2 Λ7

5. Description of the invention (8) The concave surface is used to reflect the heat to the wafer 26 to provide more effective heat. To assist in controlling the heat source 20, the processing chamber 10 further includes a temperature sensing device. For example, the processing chamber 10 may include one or more temperature sensing probes 30 for sensing the temperature of different positions on the entire wafer 26. The two sensing probes 30 are shown in Figure 1 for ease of explanation. The sensing probe 30 can be a type of pyrometer that converts infrared rays emitted by the wafer 26 into a temperature signal. An example of such a temperature measurement system is described in U.S. Patent No. 5,6660,472 of Peuse et al., Which is incorporated herein by reference in its entirety. In addition, the processing chamber 10 may also include an infrared camera, a distributed thermocouple, a thin-film thermocouple, or other temperature sensing devices suitable for measuring the temperature of the entire wafer 26. Described herein is the use of a pyrometer-based sensing probe 30. The temperature signal generated by the sensing probe 30 is fed back to the controller (not shown) to adjust the intensity of each light source 2.8 to generate the required space temperature distribution and thus know that the surface temperature gradient of the entire wafer 26 is minimized . Each sensing probe 30 can be adhered to the lower surface 31 of the reflecting plate 24 or, as shown in FIG. 丨, integrated with the reflecting plate 24. In addition, the sensing probe 30 detects infrared rays emitted from the wafer 26 attached to the wafer supporting element 22. The position of each sensing probe 30 is arranged to monitor the temperature in a specific area of the wafer 26. An array of sensing probes 30 can be used to extend to the entire surface of the wafer 26. However, in many applications, the sensing probes 30 are arranged in certain small blocks of the reflecting plate 24 or are arranged irregularly, which has provided sufficient information for the temperature control function, especially for those devices used in known applications. Spotlight source with preset space heating distribution. During the rapid heat treatment, the fragments will break from the wafer 2 6 and fall to -11-this paper size 剌 Chinese National Standard (CNS) A4 Regulation 4 (210 X 297 — 111 -------- ----- Order --'--- ^ ---- ------- (Please read the notes on the back before filling out this page) 43245 2 Λ7 Ii7 V. Description of the invention (9 'on The reflection plate between the circular processing disk and the temperature sensing probe 30, of which the round surface is called a round chip, which is usually caused by the temperature gradient of the outer edge of the wafer 26. Unfortunately, the round chip will be reduced. The accuracy of the temperature signal generated by the sensing probe 30, especially when the debris usually falls to the position where the probe coincides with the probe on the reflecting plate 24. In particular, "it will fall to the sensor and the wafer 26 (between The 'setting' interferes with the temperature signal received by the probe. This-debris-induced interference will weaken the temperature measurement signal or have other adverse effects, and will have an adverse effect on the temperature control of the entire surface of the circle 2 6 If there is no effective temperature control, an excessive temperature gradient will occur. This gradient will destroy the wafer 2 6 'to reduce the yield of the device and reduce the quality of the device. The round fragments R continue to affect wafers that are subsequently processed in the processing chamber 10 unless the fragments are removed from the reflective plate 24. In other words, the plutonium fragments broken from the single-wafer will affect many of the processes involved in the process. Subsequent wafer robbers know the harm. In order to reduce the possible impact of wafer fragments, a system for detecting wafer fragments is provided according to a specific embodiment of the present invention. Functional block diagram of the wafer chip system 32. As shown in FIG. 2, the system 32 includes an image capturing device, a charge coupled device (CCD) camera 34, a light source 36, a processor 38, and an ancestor 40. System 3 2 It may also include a response to the I-system manufacturing system 42 generated by the processor 38 to stop the rapid thermal processing chamber. The camera 34 is used to capture an image of the wafer 26 processed in the processing chamber 10. When The camera 34 is placed in an appropriate position to capture a 5V image when the wafer is in the thermal processing chamber i0. And, in a specific embodiment, the camera 34 is used to capture the crystals discharged from the processing chamber 10. Wafer image of circle 26. '-12 This paper rule Standard (CNS) Μ specification (2W χ 297mm ^) ------------- 〇Installation (Please read the precautions on the back before filling this page) Order i -—— rl! Line ' Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 43245; Λ7 H7 Printed by the Consumer ’s Cooperative of the Intellectual Property Office of the Ministry of Economic Affairs? 8? V. Description of the invention (10) For example, the camera 3 4 can be attached to the receipt by the processing declaration丨 ο The observation chamber of the discharged wafer 26 is connected to the observation circle cooling chamber. In this method, the 'observation chamber' simultaneously forms the area for analyzing the wafer 26 and the cooling of the wafer in advance. Follow-up. Processing. Therefore, the analysis does not affect the fast processing yield. The camera 34 is attached to the observation port of the cooling chamber to capture the basic part of the wafer 26 in its field of view. The resulting image may correspond to the top circle of a wafer 26. Therefore, the camera 34 is placed on the wafer 26, or receives a top view of the wafer with the optical element. The controller 38 analyzes the image captured by the photography brigade 3 to detect the changes in the optical density contrast to discern the missing part of the wafer, and decides whether the wafer is based on the change in the optical lean contrast. Some defects. The comparison area on the surface of the wafer 2 6 can be identified by comparing the optical density of the area with the target range of the optical density = representative data of the target range can be stored in the memory 40 to form the degree range data. In addition, the processor 38 can be planned to compare the continuous pixels in the image with a preset density difference. It is implemented on a pixel-by-pixel basis. For example, if there are wafer fragments in the area on the wafer 26, a certain range of optical density will be obtained. However, if there are no wafer pops in these areas, the pixels will show different light density ranges. Therefore, by analyzing the contrast change along one or more pixel fronts, the existence of Qiu Yuan fragments can be detected. This analysis can be performed by recording subsequent pixel contrast changes until another-contrast change is detected. In this method, the length or width of possible fragments can be measured. For those, the contrast changes in the green line or column and adjacent lines or columns can be recorded to confirm the size, length, or surface area of individual wafers. If a different light appears -13-

SiT degree applies to China's Western Standard (Please read the notes on the back before filling this page) N Pack ---- Order 1 = --- l · --- line 43 ^ 4 5 2 Λ7 V. Description of the invention (11 ) The size of the printed density area of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs has been shattered. amp 超 ⑯ 'means that there are crystals on wafer 26. In other words, the number of pixels in the comparison area can be estimated, and the estimated size is calculated by calculating the foot temperature measurement and control function in the comparison area. (The size of the bangs is compared. If the size is oversized, it means that wafer defects, ie, wafer fragments, are detected. ^ It can be determined based on experiments that exclude false positive detection results, especially the interference of light transmission. The shape of the different pieces, the change of the reflectivity and the change of the lighting for processing. In many cases, it is desirable to allow the user to set the sensitivity and nuclear setting required. Then, the conditions that are constantly changing in the processing chamber i are corrected. The fragment detection procedure used is necessary. If necessary, not only the interval is set for the single-contrast area, but also the valve is set for the accumulated contrast area. If this situation is down, the valve may correspond to the representative. The total number of pixels on the entire wafer surface of the chip that causes damage to the temperature control function. For example, the size of the single-chip is not sufficient to affect the temperature measurement energy, but the cumulative effect of the chip is also not desired. The physical β 3 8 can compare the single-chip with the valve, or simply compare the total celestial sum of the surface analyzed by the wafer with the cumulative valve. According to the instructions of the wafer chip, the processor 38 generates A suggestion to stop the rapid heat treatment operation automatically or manually. This suggestion informs the operator to perform a manual stop or, optionally, to the controller 42. Control D 4 automatically stops the rapid heat treatment logistics. For example, the controller 4 2 ^ Fast heat treatment to clean the reflector 24 manually or manually before the next wafer is inserted into the processing chamber 10. If necessary, the suggestion may include an indication of 1 size -14-This paper size applies to Chinese national standards (CNS ) A 彳 Specification (210 X 297mm) 0 (Please read the notes on the back of the report before filling in this page) -Π assembly can be ordered more than the processor. 1 · --- ^ ---- line 4324〇2 Member of the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperative Seal-Λ7 B7 Five Invention Notes (12) and the information on the number of credits for any wafer fragments for the operator's consideration or green records to the file for future analysis. This-. Information can also be sent to the wafer chip Position at least along a certain direction of the wafer 26. All the above information is connected with the user in the form of graphics and / or text. Moreover, the use of a monitor enables the operator to view the captured image. To help with The captured image identifies the contrast area. The wafer 26 is preferably placed on the backlight surface. In this case, the target range of the optical density corresponds to the backlight surface. In this case, the target range of the optical density corresponds to The optical density range represented by the background surface. In order to enhance the contrast analysis, the background surface can be illuminated by the circular pattern of illumination light to the edge portion of the wafer 26 to provide the backlight of the wafer. At this time, there are no wafer fragments, and the backlight display passes The chip-free area of the wafer facilitates the identification of the processor 38. In order to project a circular pattern of illumination light and prevent light from entering the upper surface of the wafer 26, an illumination baffle must be used. The lighting baffle discriminates the internal area from the external area, and is used to limit the illumination light projected by the light source to the external area and the viewing range of the image capture device to the internal area. Moreover, the outer area is configured so that the illumination light illuminates only the background surface adjacent to the edge portion of the wafer 26 to provide backlight while avoiding illumination on the upper surface of the wafer. In order to simplify image processing, only the images corresponding to the edges of the wafer 26 are analyzed and the rest of the images are discarded. + + Round fragment guide often. _ Occurs on the wafer spectrum. Therefore, the analysis of the 'wafer 26' edge is generally sufficient for the identification of possible wafer fragments. In this method, the necessary image processing can be implemented in a more economical way, focusing on the most likely part of the wafer 26 to be broken. Because the analysis is limited to the edge part, the backlight of the edge part is sufficient for -15- This paper size is applicable to the national standard (CNS) A4 specification (210 X 297 mm) -------- 7 j- 衣* ------- Order i ---- ^ ---- line 'JT (Please read the precautions on the back before filling in this page) 4 3 245 2 Λ7 Β7 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives System 5] Invention Description (13) There is a comparative analysis of Mei. Therefore, the circular light source provides effective lighting. Circle 3 is a cross-sectional view of the observation chamber 46 used for analyzing the wafer 26. FIG. 4 is an expanded view of the observation room 46. As shown in FIG. As shown in Figures 3 and 4, the observation room "contains the base" and the outer head 50. As shown in tf in FIG. 3, the observation room 46 also includes an observation component 52. The base 4 8 may include a side hole 5 4 for receiving the wafer 26 to the support area 56. The wafers 2 6 are transferred to the side holes 5 4 using a conventional wafer transfer machine such as a transfer plate. The observation chamber 4 6 can be integrated with a cooling chamber. Therefore, the base 48 may be in the form of a cooling plate, and may include appropriate pipes and internal ducts for flowing the cooling liquid. The wafer 26 is placed on the support area 56 with a wafer fixing structure (not shown) on the background surface 58. The wafer mounting structure may include, for example, a tapered quartz rod having a wafer contact point. The tapered rod is fixed to the mechanical hole of the base 48. The base 48 further includes a slit 59 having a fixing lip 60 for receiving a bottom fixing flange 62 of the main outer box 50. The fixing flange 62 and the fixing lip 60 come together as bolts. The main outer box 50 typically has a cylindrical outer wall 66 and is fitted with a tapered lighting shield 68. The illumination baffle 68 is suspended on the wafer 261 by a mechanical bracket (not shown) in the slit 59. The child bracket is connected to the base parallel to the slit 59. ′ Referring to FIGS. 3, 4, 5 and 6, the observation unit 52 includes an image pickup device such as a camera 72 and an illumination light source such as a halo 74. The halo 74 separates the central opening 76. The lens 77 of the camera 72 extends through the central opening 76 and is separated from the halo 7 4 by a collar 7 8. As shown in FIG. 4 in particular, the main upper opening S◦ and the upper fixing lip 82 are shown. The fixing ring 84 is fixed by a screw inspection 85 and fixed to a lip 82, and a groove 86 for receiving the transparent observation plate 87 is separated. Observation-16 " This paper size applies to China National Standard (CNS) A4 specification (210 = < 297 mm). -------- Order --------- line} (please first Read the notes on the back and fill in this page) 4 3 24 b? Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Λ7 Π7 V. Description of the invention (14) Plate 8 7 Put the camera 7 2 and the halo 7 in the main cover 5 0 4 Spaced from steam, D camera mounting bracket 8 8 is locked to the upper surface 9 0 of main housing 50 by screw inspection 9 2. The camera 7 2 is fixed on the camera holder § 8 with the domain wire 9 4 and the screw test 9 5 firmly and half, and the inside of the main cover 50 is viewed downward. The grips 96, 98 are also fixed to the upper surface 90 of the main housing 50, for example, bolts 100 are used to strengthen the installation and removal of the viewing module 52. As shown in FIG. 3 in particular, the lighting baffle 68 separates the inner area [02] and the outer area 104. The bracket 68 is substantially conical with a first circular opening 106 having a first diameter and a second circular opening 106 having a second straight edge. The second circular opening 108 is defined by a cylindrical portion 11 0 of the lighting baffle 68. FIG. 7 shows the opening 59 fixed in the base 48. The size of the second opening 108 is larger than that of the wafer 26. In particular, the diameter of the second opening 108 is slightly larger than the size of the wafer 26. The illumination baffle 68 and the observation assembly 52 are positioned so that the ring pattern of the illumination light generated by the light source 74 does not directly enter the upper surface of the wafer 26. Instead, as shown in FIG. 3, the illumination light is generally limited to the outer area 104, and only illuminates the background surface 58 near the edge portion 丨 2 of the wafer 26. In this method, the illumination surface illuminates the background surface 58 to provide a backlight of the wafer circle 26. At the same time, the field of view of the camera 72 is usually limited to the inner area 102, so it will not receive the illumination light projected by the halo 74. In order to prevent the illumination light from being incident on the upper surface of the wafer 26, the illumination baffle 68 is made of an opaque material to block the interior area. At the same time, the outer surface of the lighting baffle 68 and the inner surface of the main cover 50 are made reflective to increase the illumination light without diminishing, such as a bit like a light pipe. Moreover, the diameter of the second opening 108 is adjusted so as to project downward to the background surface in a ring shape. -17- ------------- 3 Packing ---- Factory 丨 .., ( (Please read the notes on the back before filling this page) Order -1 · --- ^ ---- line '

43 245 2 Λ7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs * 1 ^ V. Description of the invention (15 Diameter ^ Circle 26 diameter. The light hitting the background surface 58 reflects upwards to strengthen the wafer 2 6 penetrating ridge Contrast between the lobed parts of the outer lumps. Any muddy light pattern 'Halo 7 4 which is visible through the backlight is broken.> The halo 7 4 is better to provide a light diffusion pattern. And' if necessary, you can talk. οπ, 』button is the scene surface 58 made to diffusely brighter lines. The lens 77 of the camera 72 is placed on the phase 3 of the first opening 106. 'occupies and only observes the top surface of the wafer 2 6 Φ. Special S The camera view f basically does not have the effect of the illumination light projected by the light beam 7 4. In the dagger, the 'knowing and bright baffle 6 8' can significantly enhance the identification of the possible wafers performed by the processor 3 '. Comparative analysis of debris. The comparison can be further enhanced by the height of the withered wafer 26 in the processing chamber 46 from the base 48, for example, by installing a wafer top mechanism in the processing chamber. Moreover, in the cylindrical part A dark ring is formed on the inner surface of 11G to eliminate back reflection. This—the dark ring can be blackened by hard anode The pavilion ring is made and nailed in place. Figure 8 is a top view of the wafer 26 with chipped edges. As shown in Figure 8, the wafer 26 is placed on the background surface 58 for comparative analysis. During implementation, The processor 38 analyzes the image captured by the camera 72 on the wafer 26, and recognizes and compares the changes on a pixel-by-pixel basis. In the example of FIG. 8, the processor 38 observes the edge portion 112, and a portion of the edge portion has a phase difference. Correspondence area corresponding to the fragment portion 114 of the wafer 26. In particular, the processor 38 recognizes the comparison area by comparing the optical density of the area with a target range of optical density including the background surface 58. For example, a crystal The surface of the circle 2 6 presents a fairly uniform optical density, or the optical density of ^ 细 is narrow and the fragmented portion 114 presents a light density equivalent to the illumination light reflected by the background surface 5 8. In most cases , Lighting-18 This button's scale is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) — — — — — ill — — — Λ—w · 11 ----— Order--- --- 1 (Please read the notes on the back before filling out this page) 〇 2 Intellectual Property of the Ministry of Economic Affairs Printed by employee consumer cooperative Λ7 B7 V. Invention description (16) The intensity of the light must be sufficient to provide a needle ratio between the wafer 2 6 and the background surface 5 8 ° In particular, the difference in optical density must offset The captured image is not uniform: the winter H inequality .... As further shown by circle 8, the image captured by the camera 7 2 is processed by the processor 3 8 to remove the remaining part and only the edge part 2 is left. In particular, the processor 38 can effectively remove the central portion 116 after the comparative analysis. The reason why the central portion 1 16 is removed is that it is known that wafer fragments mostly occur in the edge portion 1 12. Therefore, in order to avoid excessive processing, the processor 38 is set to focus on the places where four wafers are more likely to occur. In experience, the user can adjust the size of the edge green portion 112 through analysis, or perform the analysis of the entire surface of the wafer 2 6 selectively. However, in most cases, the analysis of the edge section 12 is sufficient to identify the wafer fragments that will adversely affect the temperature measurement and control functions. Analysis of edge bands with widths close to 2 cm is usually sufficient to identify problem wafer fragments that can be fl colored as an example. Moreover, in most applications, it is sufficient to analyze only a part of the edge portion U2. For example, referring to FIG. 1, the sensing probe 30 is placed in a small area of the reflective plate 24 without passing through the entire wafer surface to maintain the uniform temperature distribution of the space of the heat source 20. Therefore, analyzing only the portion of the wafer 26 corresponding to the position of the sensing probe 30 on the reflecting plate 24 is sufficient to identify wafer fragments that usually affect the accuracy of the temperature signal generated by the probe. In this case, other wafer fragments that have less significant effect on the temperature control function are excluded. However, in most cases, it is also desirable to be able to identify these circular fragments, not to consider the effect on the temperature control function ', but to detect defective wafers. In the larger area where the sensing probe 3 〇 extends to the reflecting plate 2 4 -19- This paper scales the national standard (CNS) A4 specification (210 X 297 cm) ---------- -Strike --------- Order --------- Line (Please read the notes on the back before filling this page) 4 3 2Λ5 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives Λ7 U7 5. In the description of the invention (17), the processor 38 should also consider a larger area. It should also be understood that when the wafer 26 is moved out of the processing chamber 10, the wafer fragments also fall to different positions on the reflecting plate. Circle 9 is a flowchart illustrating the detection of wafer fragments in a rapid thermal processing chamber. As shown in FIG. 9, the processor 38 drives the camera 72 and the light source ^ to capture the image of the wafer 26 in the observation room 46, such as block 118. If necessary, the camera 72 can be discharged before the wafer 26 is discharged from the rapid thermal processing room 10. Capture a solid image, for example, to observe the wafer through a suitable optical path of the camera 720. However, in many cases, observing wafers 26 in a rapid thermal processing chamber can be quite fuzzy. Therefore, it is often desirable to capture a wafer image at a subsequent exit, such as a cooling chamber. In this specific embodiment, after capturing the wafer image, the processor 38 removes the central portion and retains the wafer edge portion, such as block 120. The processor 3 8 analyzes the change in the optical density of the extracted image as described in block 12 2. The processor 38 then evaluates the overall size of the comparison area or the size of the individual area, as described in block 124. The processor 38 then determines whether its size exceeds the preset valve threshold, as described in block 126. If so, the processor 38 generates a recommendation and selectively stops the rapid thermal processing of the next wafer until the wafer fragments are removed 'as described in blocks 12 8 and 130. If its size does not exceed the valve 値, the processor 38 does not generate a recommendation and maintains the rapid heat treatment relay operation, as described in block 1 2 2. FIG. 10 is a side view of another observation room 134. The observation chamber 134 is basically the same as the observation chamber 46 shown in FIG. Therefore, similar structures are denoted by similar reference numerals in FIGS. 3 and 10. However, compared with the observation room 46, the observation room 134 is equipped with a backlight system for another wafer 26. In particular, the observation room 4 6 uses -20- This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ----; ------------------- --- Order 1 · --- ^ ---- line {Please read the notes on the back before filling this page) 432452 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Λ7 H7 V. Description of the invention (18) Halo 7 4 and an illumination baffle 6 8 fixed at the upper end of the processing chamber, and the observation room 134 includes a halo 136 fixed in a recessed area 138 in the floor 48. Therefore, as shown in FIG. 10, the halo 136 is displayed on the wafer 26 to provide backlighting directly from the other side of the image mining device. In particular, the halo 36 emits illumination light toward the back surface 140 of the wafer 26. The halo 136 is placed in the recessed area 138 and is covered by a quartz window 142. Furthermore, appropriate electrical wiring is made in the base 48 to provide power to the halo 136. FIG. 11 is a top view of the wafer 26 which is combined with the halo 13 6. As shown in FIG. 11, the size and position of the halo 136 are adjusted so as to overlap the edge portion 144 of the wafer 26. The wafer 2 6 blocks a part of the illumination light that hits the camera 72. And the camera 7 2 can see the part of the illumination light outside the edge portion 1 44 of the wafer 26, thereby enhancing the contrast of the optical density at the edges. In this method, the completeness of the entire area of the wafer 26 is darker. The chipped area or the area other than the edge portion 14 4 is dark 'so that the backlight provided by the halo 136 is transmitted to the camera 72. When the fragments are cracked from the edge of the wafer 26, as shown by the number 146, the optical contrast provided by the halo 36 facilitates the identification of the fragments using the mechanical vision technology described above. The comparative analysis described in this article can be implemented using conventional machine vision technology and commercialized systems. For example, a machine vision system that implements comparative analysis technology is marketed by Cognex Corporation of Natick, Mass. An example of a suitable alkaline machine vision system is the Cognex MVS 8000 series system, which includes a complete set of PC-based machine vision hardware and software tools. Using this system, images are analyzed on a day-to-day basis to assess the difference in optical density. If there is a difference between the optical density and the valve 値, the pixel is recorded as a contrast picture-21-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ----: ----- --Install -------- order --------- line (please read the precautions on the back before filling this page) 432452 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 5 · Description of the invention (19). In terms of system and commercialization, it is often used in machine vision applications. In actual comparison, the processor 38 can use any traditional general-purpose single or multi-chip microprocessor such as Pentium (R) to process II, Pentium Pr0 @ Processor 8051 processor, MIPS processor, power PC® processor or AIpha @ processor. In addition, the processor 38 may be embedded with a special-purpose microprocessor in a dedicated machine vision system. In the above-mentioned experimental Cogiiex MVS 8000 series system, the processor 38 is a processor having an MMX instruction set. On many occasions, the processing tool 38 executes a programmed program to implement the conventional image processing for comparing the actual and reference images to analyze the optical contrast. In addition, the processor 38 can use a customized logic circuit to execute the wafer fragment detection process as described above. The camera 72 may be a two-dimensional CCD pixel array with a plurality of pixels covering both horizontal and vertical fields of view. In this method, the captured image provides multiple pixel ranks to quantify the width and length of the fragments, such as the number of pixels, for comparison with the valve. Therefore, the overall deviation valve can be established by referring to the total number of contrasting elements in the image. In addition, the contrast pixels can be classified according to the surroundings in adjacent rows and columns, thus quantifying the overall cross-sectional size of individual wafer fragments. In this case, the deviation valve 値 is established based on the maximum dimensional tolerance of the wafer chip. The halo 74 or 136 can use ring light made of optical fibers, such as those sold by Fostec, Auburn, New York, especially for machine vision and microscopy applications. The above detailed description is only for easy understanding of the present invention and its experimental use. It will be apparent to those skilled in the art that modifications to the present invention can be made without departing from the spirit and scope of the patentable scope. -22- This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) II — II II I--, V--III --- I order .-------- (Please (Read the notes on the back before filling out this page)

Claims (1)

3 245 2 Patent application scope 00 round chip system; the system includes: L-an observation chamber for analyzing on a wafer; a wafer supporting element placed in the observation chamber; a source of wafer supporting element generated; and The light of the backlight on the wafer is an image capture module for capturing at least the image representing the edge position of the wafer. 2 · If the patent application scope of the first item is included, the system further includes a background surface, where the light source is placed on the opposite side of the wafer, and the top surface of the test surface is further included. Observe the lighting capture plate in the room. The lighting baffle distinguishes the inner area from the outer area. Among them, the (M) plate restricts the illumination light generated by Guangba to the outer area and the field of view of the image extraction device is limited to the inner area. Arrange the outer area so that the illumination light illuminates the background surface portion adjacent to the edge of the wafer to provide backlight light at the edge portion of the wafer. 3. If the system of item 2 of the patent application, the illumination baffle is basically tapered The lighting baffle includes a first circular opening having a first diameter and a second circular opening having a second diameter, wherein the size of the second opening is larger than the size of the wafer placed in the wafer support area so that it is generated by the light source. The illumination light does not directly hit the upper surface of the wafer, but only hits the background surface near the edge of the wafer. 4. If the system of item 3 of the patent application park is applied, the light Circular pattern of projected illumination light. 5. If the system of patent application Fanyuan No. 4 is used, the light source is circular. 23- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) T-Λ-pack -------- Order --- ^ ---- line.} '/ L (Please read the notes on the back before filling this page) System 4 324 Λ8 m CH ί > 8 VI. Patent application Fan Guo out of the central opening 'The field of view of the image capture device passes through the central opening. 6. For example, the system of patent application No. 5 in the patent system, where the image capture device And the light source is placed adjacent to each other, the lens of the image capturing device needs to extend at least through the central opening, and the light source surrounds the lens. 7. If the system of item 1 of the patent application park, the light source It is placed on one side of the wafer adjacent to the back surface and faces the image capturing device. 8. The system according to item 7 of the patent application, wherein the light source projects the illumination light toward one side of the wafer adjacent to the background surface. Circular pattern. 9. The & Among them, the circular pattern of the illumination light and the edge portion of the wafer are re-established ^ 1 10. As for the system of the patent application No. 1, further includes a processor that analyzes the captured image to detect defects, and Recommendations are generated when a defective part of a wafer is detected. Η. For example, the system of the patent application of the patent park, where the processor analyzes the captured image by identifying changes in light capacity, wide contrast, and ratio. Discrimination of optical density comparison table to determine whether the wafer is defective. 12. For example, the system of patent application No. 1 丨, where the processor is configured to identify the difference between the optical density and the target optical density range. The comparison area is used to analyze the captured image, estimate the size of the comparison area, compare the estimated size with a threshold value, and indicate that a defective part of the wafer is detected when the estimated size is greater than the intermediate value. 13. If the system of the scope of the patent application is applied, the step further includes a controller that suspends the operation of the rapid thermal processing chamber in response to a suggestion generated by the processor.如. If the system of item 10 of the patent application scope, in which the observation room is cold -24-This paper baht scale applies Chinese national standard < CNS) A4 specification (2i0x 297 mm) (Please read the back first Please note and fill in this 1K): -Order 1, printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 432452 Λ8 ΪΪΗ C8 08 Scope of patent application Serving. 15. As described in item 10 of the patent application park, the system 'wherein further arranges meals to analyze the area by identifying the contrast area along the edge of the wafer that has inherent differences between the optical density and the optical density range present in the background. Detach the image 'estimate the size of the comparison area, compare the estimated size with the median value, and indicate that the wafer is available when the estimated size is large. 16. = A system for detecting wafer debris in a deposition processing chamber. The system provides a light source for backlighting at the edge of the wafer in the processing chamber.-An image capture device is used to capture an image representing at least the edge of the wafer. ; And a processor analyzes the captured image to detect a defective portion of the wafer, and generates a recommendation when a defective portion of the wafer is detected. 17 'The system according to item 6 of the patent application range', wherein the processor determines whether there is a defect based on the change in the optical density based on the identification of the change in the optical density. 18. The system according to item 16 of the patent application park, wherein the processor discriminates the image drawn by a contrast area whose optical density differs from the target optical density range, estimates the size of the contrast area, and estimates the size and ㈣ Compare. It indicates that a defective part of the wafer is detected when the estimated size is larger. Yiru applied for a system of item No. 18 in the scope of patent application, in which the processor recognizes the image by identifying the same optical density which is different from the target optical density range. ------, '--- (please read the note on the back? Matters #, | on this page) line. This paper size is applicable to the national standard of home country-25 43245 A8 C8 DS Ministry of Economic Affairs Intellectual Property Bureau Consumer Consumption Cooperative Printed 6. The number of adjacent pixels in the patent application range was used to identify the contrast area. 20. The system according to item 19 of the scope of patent application, wherein the processor estimates the comparison area by calculating the number of adjacent primes s in the comparison area, and indicates that a wafer is detected when the estimated size is greater than the interval. Defective parts. 21. The system according to item 8 of the patent application 'wherein the light source is provided with backlight light at the edge of the wafer relative to the image capturing device, and wherein the target optical density range is equivalent to the light density represented by the backlight light' range. · &Quot; 22. If the system of the scope of patent application item 6}, further includes a controller to stop the operation of the rapid thermal processing chamber in response to the suggestions generated by the processor. 23. For example, the system of item 6 of the Shen Fan Patent Park, wherein the image capturing device is used to capture an image after the wafer is removed from the rapid thermal processing chamber. 24. The system described in item 23 of the I-Patent, wherein the image capture device is used to capture an image after receiving a wafer in a cooling room. 25. The system for claiming item 24 of the patent scope further includes a window disposed above the wafer received in the cooling tower, wherein the image extraction device is used to capture the top-view image of the wafer through the window. 26. If the system of claim 23 of the patent scope is further included, the illumination capture plate further distinguishes the internal area from the external area, and the lighting baffle is positioned so that the illumination light projected by the light source is limited to the external area and the image capture device The field of view is limited to the inner area. The outer area is arranged to illuminate the background surface portion of the edge portion near the wafer with the illumination light, thereby providing backlight of the edge portion of the wafer. 27. The system of item 26 of the scope of patent application, wherein the processor is further configured to identify the optical density and the background surface along the edge of the wafer. Specifications (21〇X 297 mm) I --- install -------- order i.— ί I ^ ---- line J (please read the precautions on the back first to write this page privately) iDS 432452 6./Apply for a range of contrast areas where the range of optical density presented by the patent application is different when lighting. Analyze the size of the image 'estimated contrast area, compare the estimated size box, and when the estimated size is greater than Indication detection detected a defective part of the wafer. The system according to item 23 of Gongru's patent application, wherein the light source is placed on one side of the crystal circle adjacent to the background surface toward the image capturing device. 29. A method for detecting wafer fragments in a deposition processing chamber, the method comprising: illuminating a portion adjacent to a wafer edge while the wafer is being processed in the processing chamber; Provide backlight light at the edge of the wafer; analyze the captured image to detect the defective part of the wafer; and generate recommendations when a defective part of the wafer is detected. 30. The method in item 29 of the patent application scope further includes determining whether the wafer has a defect based on the identification of the change in optical density by analyzing the image captured by the change in optical density. 31. The method according to item 29 of the patent application scope, further comprising analyzing the captured image in the following steps: identifying a pair of dagger regions having an optical density different from the target optical density range; estimating the size of the contrast area; The estimated size is compared with the valve size; and when the estimated size is larger than the valve size, it indicates that a defective portion of the wafer is detected. 32. If the 31st method of the scope of patent application, further includes identifying the humming 27- (please read the precautions on the back before filling out this page}. Install —! — Order --- line, Ministry of Economic Affairs Intellectual Property Bureau Printed by the employee consumer cooperative 2 3 4 1,1 5 A8 [18c8r) 8 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by the employee consumer cooperative η The number of adjacent pixels in the same optical density range where the patent scope and the target optical density range are different Identify contrast areas. 33. The method according to item 32 of the patent application park further includes estimating the size of the comparison area by calculating the number of adjacent pixels in the comparison area, and indicating that a wafer is detected when the estimated size is greater than the valve threshold. Defective parts. 34. The method according to item 3 of the patent application park, wherein the target optical density range is equivalent to the optical density range represented by the backlight light. 35. The method according to item 29 of the patent application scope further includes a controller that suspends the operation of the rapid thermal processing chamber in response to a suggestion generated by the processor. 36. The method according to item 29 of the patent application scope further comprises extracting an image after the wafer is removed from the rapid thermal processing chamber. 37 ’The method of item 36 of the patent application park further includes capturing an image after receiving a wafer in a cooling chamber. 38. The method according to item 37 of the scope of patent application, wherein the cooling chamber is enclosed by a window above the wafer which is cooled to the inside, and the image capturing device is used to capture the image on the wafer through the window. 39. The method according to item 38 of the scope of patent application, further comprising analyzing the captured images in the following steps: Identifying the optical density along the wafer edge and the range of optical density of the background surface when illuminated The comparison area of the difference; the size of the comparison area is estimated; the estimated size is compared with the valve; and when the estimated size is greater than the threshold value, a defective part of the wafer is detected. 40. For the method of item 29 of the scope of patent application, which includes the action package for capturing images-28- Please read the note of the back Φ first, then fill in the J writing page 1 I line standard ㈣ SU4 specifications _ (210 X 297 mm) 4 3 24 5 2 AE 88 C8 D8 Printed by the Intellectual Property Office of the Ministry of Economic Affairs and the Intellectual Property Bureau of the Consumers' Cooperative. 6. The scope of patent application includes the provision of a lighting bezel to distinguish the internal area from the outside area. The bezel is projected by the light source. Light 视野 The field of view of the image extraction device is limited to the internal area. Outside the arrangement: == Illumination light illuminates the edge of the adjacent wafer. Second = Provides backlight for the edge of the wafer.尽 衣 面 # 知 Therefore 41 · As described in the patent application scope No. 4 〇. The round edge part has optical density and back: Table :: Steps include comparison to identify differences along the crystal density range 2 Table = when illuminated Presented light u or 'Estimated Contrast Area Rule + Compare the estimated size with the valve size, and at the size, a defective part of the wafer is detected. * 'Indicating when it is larger than the valve 42 42. The method of item 37 of the patent application scope, wherein the wafer is illuminated toward the-side of the image capturing device. Including 43. If the method of applying for the scope of the patent No. 42, the edge of the Japanese yen has optical density and back γ «Identify the difference between the density range along Liyang I: The light shown in the table will be estimated size and valve 値In comparison, a defective part of the wafer is detected in the estimated size (size '. Indicate when the inch is larger than the valve diameter. 44. An observation room used to analyze the wafer on the wafer; —The wafer support element placed in the observation room; the light of the backlight used for the wafer placed on the wafer support element by the source second life = take the image representing at least the edge of the image ^ -29 Dimensions "_ Home Standard (CNS) A4 size coffee 挪 Norwegian public love) J outfit -------- tri * — ^ ---- line '< Please read the precautions on the back before filling this page) .4 3 24 PH- * Λ8 m CH m Employees ’Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, India ΐ 、, Patent Application Park 45. If the system of patent application No. 44 is applied, its ψ &., Light source projection Circular case of lighting light. J Λ ^ 46. If the system of patent application No. 44 is applied, who —.,. Ν Contains analysis of the extracted images to detect wafer defects, and generates recommendations when the phase of the wafer arrives at the defective part of the wafer. 47. —A kind of wafer used to analyze wafer fragments on the wafer萆 Technology 'τ' Ά; The package of the system: an observation room; ° a wafer support component placed in the observation room: one placed on the background surface of the wafer support component in the observation room · an image capture device for An image of at least the edge of the wafer placed on the wafer supporting element is peeled from the side of the crystal '7 round supporting element facing the background surface; a light source for projecting illumination light in the observation room; an illumination baffle placed in the observation room The lighting baffle distinguishes the internal area from the external area. The lighting baffle allows the lighting light projected by the light source to be limited to the external area and the field of view of the image capture device is limited to the internal area. The background surface portion which illuminates the edge portion adjacent to the wafer thus provides a backlight at the edge portion of the wafer. 48. For example, the system of item 47 of the patent application scope, wherein the illumination baffle is basically For the cone shape, the lighting baffle includes a first circular opening having a first diameter and a second circular opening having a second diameter, wherein the size of the second opening is larger than the size of the wafer placed in the wafer support area such that The illumination light generated by the light source does not directly hit the upper surface of the wafer, but only reaches -30 near the wafer.- This paper size applies to China National Standard CCNS) A4 specification (210 X 297 meals) — II ---- -In 11 — I! I ΙΓ--LI 篆 线} 1 (Please read the precautions on the back before filling this page) 4 3 24 5 P ah HH C8 ΠΗ 6. The background surface at the edge of the patent application scope. 49. A system for analyzing wafer fragments on a wafer; the system includes: an observation room: a wafer support element placed in the observation room; a backlight provided on a side of the wafer placed on one side of the wafer support element A method; and an capturing image device for capturing an image representing at least an edge portion of a wafer, the capturing image device extracting an image of a backlight portion when the wafer edge portion has no wafer fragments. (Please read the precautions on the back before filling out this page). Packing ---- Order 1 ---: ---- Line, printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Consumption Cooperative 3 This paper size applies to Chinese national standards (CNS) A4 size (210 X 297 mm)