JP2006257495A - 基板保持部材及び基板処理装置 - Google Patents
基板保持部材及び基板処理装置 Download PDFInfo
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- JP2006257495A JP2006257495A JP2005076555A JP2005076555A JP2006257495A JP 2006257495 A JP2006257495 A JP 2006257495A JP 2005076555 A JP2005076555 A JP 2005076555A JP 2005076555 A JP2005076555 A JP 2005076555A JP 2006257495 A JP2006257495 A JP 2006257495A
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- Prior art keywords
- substrate
- substrate holding
- holding surface
- heat transfer
- susceptor
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】 サセプタ13は,基板Wより小さい基板保持面20を有している。基板保持面20は,外周リング21と複数の凸部22を備えている。基板保持面20の中心領域R1には,凸部22を均等に配置する。基板保持面20の中間領域R2には,凸部22を中心領域R1よりも単位面積当たりの個数が少なくなるように配置する。基板保持面20の外周領域R1には,凸部22と外周リング21を配置する。これにより,基板保持面20の中間領域R2における熱伝達率を,中心領域R1よりも低くし,外周領域R3における熱伝達率を中心領域R1よりも高くする。
【選択図】 図2
Description
13 サセプタ
20 基板保持面
21 外周リング
22 凸部
R1 中心領域
R2 中間領域
R3 外周領域
W 基板
Claims (7)
- 基板を載置して保持し,基板と基板保持面との熱伝達により基板を温度制御する基板保持部材であって,
基板よりも小さい基板保持面を有し,
前記基板と基板保持面との熱伝達率は,基板保持面の中心領域と外周領域との間の中間領域が前記中心領域と前記外周領域に対し低くなっており,前記外周領域が前記中心領域に対して高くなっていることを特徴とする,基板保持部材。 - 前記基板保持面の中間領域は,保持した基板の中心から見て基板の半径の80〜90%の範囲に位置していることを特徴とする,請求項1に記載の基板保持部材。
- 前記基板と基板保持面との熱伝達率は,基板と基板保持面との接触面積を変えることによって設定されていることを特徴とする,請求項1又は2のいずれかに記載の基板保持部材。
- 前記基板保持面には,基板を支持する複数の凸部が形成されており,
前記基板と基板保持面との熱伝達率は,前記凸部の単位面積あたりの数,又は各凸部の基板との接触面積を変えることにより設定されていることを特徴とする,請求項3に記載の基板保持部材。 - 前記基板と基板保持面との熱伝達率は,基板保持面の材質を変えることによって設定されていることを特徴とする,請求項1又は2のいずれかに記載の基板保持部材。
- 前記基板と基板保持面との熱伝達率は,基板保持面の表面粗さを変えることにより設定されていることを特徴とする,請求項1又は2のいずれかに記載の基板保持部材。
- 請求項1〜6のいずれかに記載の基板保持部材を備えた基板処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005076555A JP4869610B2 (ja) | 2005-03-17 | 2005-03-17 | 基板保持部材及び基板処理装置 |
CNB2006100576971A CN100390957C (zh) | 2005-03-17 | 2006-02-24 | 基板保持部件及基板处理装置 |
US11/370,145 US7718007B2 (en) | 2005-03-17 | 2006-03-08 | Substrate supporting member and substrate processing apparatus |
KR1020060024138A KR100735937B1 (ko) | 2005-03-17 | 2006-03-16 | 기판 유지 부재 및 기판 처리 장치 |
TW095109000A TWI392043B (zh) | 2005-03-17 | 2006-03-16 | A substrate holding member and a substrate processing apparatus |
Applications Claiming Priority (1)
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---|---|---|---|
JP2005076555A JP4869610B2 (ja) | 2005-03-17 | 2005-03-17 | 基板保持部材及び基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006257495A true JP2006257495A (ja) | 2006-09-28 |
JP4869610B2 JP4869610B2 (ja) | 2012-02-08 |
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JP2005076555A Active JP4869610B2 (ja) | 2005-03-17 | 2005-03-17 | 基板保持部材及び基板処理装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4869610B2 (ja) |
KR (1) | KR100735937B1 (ja) |
CN (1) | CN100390957C (ja) |
TW (1) | TWI392043B (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009144224A (ja) * | 2007-12-17 | 2009-07-02 | Kochi Prefecture Sangyo Shinko Center | 成膜装置及び成膜方法 |
JP2009155689A (ja) * | 2007-12-26 | 2009-07-16 | Kochi Prefecture Sangyo Shinko Center | 成膜装置及び成膜方法 |
JP2009212345A (ja) * | 2008-03-05 | 2009-09-17 | Nsk Ltd | ワークチャック、露光装置及びフラットパネル製造方法 |
JP2009212344A (ja) * | 2008-03-05 | 2009-09-17 | Nsk Ltd | ワークチャック、露光装置及びフラットパネル製造方法 |
JP2011501418A (ja) * | 2007-10-12 | 2011-01-06 | アプライド マテリアルズ インコーポレイテッド | 静電チャックアセンブリ |
JP2011155170A (ja) * | 2010-01-28 | 2011-08-11 | Panasonic Corp | プラズマ処理装置 |
JP2012204447A (ja) * | 2011-03-24 | 2012-10-22 | Covalent Materials Corp | 静電チャック |
JP2014195047A (ja) * | 2013-02-28 | 2014-10-09 | Tokyo Electron Ltd | 載置台及びプラズマ処理装置 |
JP2018182093A (ja) * | 2017-04-14 | 2018-11-15 | サムコ株式会社 | ウエハ処理装置 |
KR20220170369A (ko) | 2021-06-22 | 2022-12-29 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 및 정전 척 |
WO2023022041A1 (ja) * | 2021-08-20 | 2023-02-23 | 東京エレクトロン株式会社 | 静電チャック、基板支持器及び基板処理装置 |
Families Citing this family (7)
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KR100943427B1 (ko) * | 2008-02-04 | 2010-02-19 | 주식회사 유진테크 | 기판지지유닛 및 기판처리장치, 그리고 기판지지유닛을제조하는 방법 |
KR101310109B1 (ko) * | 2011-06-13 | 2013-09-23 | 주식회사 엠와이에스 | 세라믹 몸체의 가장자리에 패드가 형성된 정전기 척 |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
CN104950581A (zh) * | 2015-07-02 | 2015-09-30 | 武汉华星光电技术有限公司 | 烘烤装置和光刻胶层的硬化方法 |
KR101958636B1 (ko) * | 2016-10-31 | 2019-03-18 | 세메스 주식회사 | 기판 지지 장치 및 이를 가지는 기판 처리 설비, 그리고 기판 처리 방법 |
TWI658489B (zh) * | 2017-09-14 | 2019-05-01 | 南韓商吉佳藍科技股份有限公司 | 包括能夠旋轉之靜電吸盤之電漿基板處理裝置及利用其之基板處理方法 |
WO2020149936A1 (en) * | 2019-01-18 | 2020-07-23 | Applied Materials, Inc. | Heated pedestal design for improved heat transfer and temperature uniformity |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002270681A (ja) * | 2001-03-07 | 2002-09-20 | Anelva Corp | 基板処理用静電吸着機構 |
Family Cites Families (10)
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US4990169A (en) * | 1988-11-14 | 1991-02-05 | Broad Research | Ice making method and/or apparatus |
US5738165A (en) * | 1993-05-07 | 1998-04-14 | Nikon Corporation | Substrate holding apparatus |
JPH0718438A (ja) * | 1993-06-17 | 1995-01-20 | Anelva Corp | 静電チャック装置 |
US5885428A (en) * | 1996-12-04 | 1999-03-23 | Applied Materials, Inc. | Method and apparatus for both mechanically and electrostatically clamping a wafer to a pedestal within a semiconductor wafer processing system |
US5841624A (en) * | 1997-06-09 | 1998-11-24 | Applied Materials, Inc. | Cover layer for a substrate support chuck and method of fabricating same |
US6215642B1 (en) * | 1999-03-11 | 2001-04-10 | Nikon Corporation Of Japan | Vacuum compatible, deformable electrostatic chuck with high thermal conductivity |
WO2002009171A1 (fr) * | 2000-07-25 | 2002-01-31 | Ibiden Co., Ltd. | Substrat ceramique pour appareil de fabrication/inspection de semi-conducteurs, element chauffant en ceramique, dispositif de retenue electrostatique sans attache et substrat pour testeur de tranches |
US6492625B1 (en) * | 2000-09-27 | 2002-12-10 | Emcore Corporation | Apparatus and method for controlling temperature uniformity of substrates |
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2005
- 2005-03-17 JP JP2005076555A patent/JP4869610B2/ja active Active
-
2006
- 2006-02-24 CN CNB2006100576971A patent/CN100390957C/zh active Active
- 2006-03-16 KR KR1020060024138A patent/KR100735937B1/ko active IP Right Grant
- 2006-03-16 TW TW095109000A patent/TWI392043B/zh active
Patent Citations (1)
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JP2002270681A (ja) * | 2001-03-07 | 2002-09-20 | Anelva Corp | 基板処理用静電吸着機構 |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011501418A (ja) * | 2007-10-12 | 2011-01-06 | アプライド マテリアルズ インコーポレイテッド | 静電チャックアセンブリ |
KR101120590B1 (ko) | 2007-12-17 | 2012-03-09 | 가시오게산키 가부시키가이샤 | 성막장치 및 성막방법 |
JP2009144224A (ja) * | 2007-12-17 | 2009-07-02 | Kochi Prefecture Sangyo Shinko Center | 成膜装置及び成膜方法 |
JP4533925B2 (ja) * | 2007-12-17 | 2010-09-01 | 財団法人高知県産業振興センター | 成膜装置及び成膜方法 |
JP2009155689A (ja) * | 2007-12-26 | 2009-07-16 | Kochi Prefecture Sangyo Shinko Center | 成膜装置及び成膜方法 |
JP4533926B2 (ja) * | 2007-12-26 | 2010-09-01 | 財団法人高知県産業振興センター | 成膜装置及び成膜方法 |
JP2009212344A (ja) * | 2008-03-05 | 2009-09-17 | Nsk Ltd | ワークチャック、露光装置及びフラットパネル製造方法 |
JP2009212345A (ja) * | 2008-03-05 | 2009-09-17 | Nsk Ltd | ワークチャック、露光装置及びフラットパネル製造方法 |
JP2011155170A (ja) * | 2010-01-28 | 2011-08-11 | Panasonic Corp | プラズマ処理装置 |
JP2012204447A (ja) * | 2011-03-24 | 2012-10-22 | Covalent Materials Corp | 静電チャック |
JP2014195047A (ja) * | 2013-02-28 | 2014-10-09 | Tokyo Electron Ltd | 載置台及びプラズマ処理装置 |
JP2018182093A (ja) * | 2017-04-14 | 2018-11-15 | サムコ株式会社 | ウエハ処理装置 |
KR20220170369A (ko) | 2021-06-22 | 2022-12-29 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 및 정전 척 |
WO2023022041A1 (ja) * | 2021-08-20 | 2023-02-23 | 東京エレクトロン株式会社 | 静電チャック、基板支持器及び基板処理装置 |
Also Published As
Publication number | Publication date |
---|---|
TWI392043B (zh) | 2013-04-01 |
CN100390957C (zh) | 2008-05-28 |
TW200723430A (en) | 2007-06-16 |
CN1835203A (zh) | 2006-09-20 |
KR20060101302A (ko) | 2006-09-22 |
KR100735937B1 (ko) | 2007-07-06 |
JP4869610B2 (ja) | 2012-02-08 |
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