JP6739201B2 - 局所ドライエッチング装置 - Google Patents
局所ドライエッチング装置 Download PDFInfo
- Publication number
- JP6739201B2 JP6739201B2 JP2016061803A JP2016061803A JP6739201B2 JP 6739201 B2 JP6739201 B2 JP 6739201B2 JP 2016061803 A JP2016061803 A JP 2016061803A JP 2016061803 A JP2016061803 A JP 2016061803A JP 6739201 B2 JP6739201 B2 JP 6739201B2
- Authority
- JP
- Japan
- Prior art keywords
- nozzle
- dry etching
- temperature
- etching apparatus
- discharge tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001312 dry etching Methods 0.000 title claims description 55
- 239000002994 raw material Substances 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 23
- 239000004020 conductor Substances 0.000 description 13
- 230000006866 deterioration Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- 238000007789 sealing Methods 0.000 description 5
- 230000003749 cleanliness Effects 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 230000010356 wave oscillation Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Description
2 真空チャンバー
3 ノズル
4 放電管
41 プラズマ発生部
5 ワークテーブル
6 ガス供給装置
71 電磁波発振器
72 電磁波伝達手段
91 温度調整手段
Claims (7)
- ワークの表面をドライエッチングにより局所的に加工を行う局所ドライエッチング装置であって、
真空チャンバー、
上記真空チャンバー内に開口するノズル、
上記ノズルに接続された放電管、
上記真空チャンバー内に配置され、ワークを載置するためのワークテーブル、
上記ワークテーブルを駆動するテーブル駆動装置、
上記テーブル駆動装置を制御するためのテーブル駆動制御装置、
電磁波発振器、
上記放電管に原料ガスを供給するためのガス供給装置、
上記放電管に形成されたプラズマ発生部、
上記プラズマ発生部に上記電磁波発振器で発振された電磁波を照射するための電磁波伝達手段、を有し、さらに、
上記ノズルと上記放電管は別の部品から構成され、
上記ノズル又は上記放電管の少なくとも一方を、上記ノズルと上記放電管との接続部分に温度変化によるズレが生じることがないように温度調整するための温度調整手段が備えられていて、上記温度調整は、予め求められた熱膨張係数と測定された温度とに基づいて行われることを特徴とする局所ドライエッチング装置。 - 請求項1に記載の局所ドライエッチング装置において、
上記温度調整手段が上記ノズルに設けられていることを特徴とする局所ドライエッチング装置。 - 請求項2に記載の局所ドライエッチング装置において、
上記ノズルに設けられた上記温度調整手段の温度を制御するための温度制御装置を備えたことを特徴とする局所ドライエッチング装置。 - 請求項2に記載の局所ドライエッチング装置において、
上記温度調整手段が、上記ノズルに対し直接的に取りつけられることを特徴とする局所ドライエッチング装置。 - 請求項2に記載の局所ドライエッチング装置において、
上記温度調整手段が、上記ノズルに対し間接的に取りつけられることを特徴とする局所ドライエッチング装置。 - 請求項1に記載の局所ドライエッチング装置において、
上記温度調整手段が、上記ノズルと上記放電管のそれぞれに設けられていることを特徴とする局所ドライエッチング装置。 - 請求項6に記載の局所ドライエッチング装置において、
上記ノズルと上記放電管のそれぞれに設けられた上記温度調整手段の温度を個別に制御するための温度制御装置を備えたことを特徴とする局所ドライエッチング装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016061803A JP6739201B2 (ja) | 2016-03-25 | 2016-03-25 | 局所ドライエッチング装置 |
US15/463,941 US20170278674A1 (en) | 2016-03-25 | 2017-03-20 | Local dry etching apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016061803A JP6739201B2 (ja) | 2016-03-25 | 2016-03-25 | 局所ドライエッチング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017175053A JP2017175053A (ja) | 2017-09-28 |
JP6739201B2 true JP6739201B2 (ja) | 2020-08-12 |
Family
ID=59898098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016061803A Active JP6739201B2 (ja) | 2016-03-25 | 2016-03-25 | 局所ドライエッチング装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20170278674A1 (ja) |
JP (1) | JP6739201B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7104973B2 (ja) * | 2018-10-29 | 2022-07-22 | スピードファム株式会社 | 局所ドライエッチング装置 |
JP6986582B2 (ja) * | 2020-02-06 | 2021-12-22 | Nttエレクトロニクス株式会社 | 局所エッチングによる光デバイス製造方法、及び製造装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4943345A (en) * | 1989-03-23 | 1990-07-24 | Board Of Trustees Operating Michigan State University | Plasma reactor apparatus and method for treating a substrate |
JPH09219295A (ja) * | 1996-01-30 | 1997-08-19 | Applied Materials Inc | 液冷式リモートプラズマアプリケータ |
US5895548A (en) * | 1996-03-29 | 1999-04-20 | Applied Komatsu Technology, Inc. | High power microwave plasma applicator |
JP2000174004A (ja) * | 1998-12-03 | 2000-06-23 | Chemitoronics Co Ltd | プラズマエッチングの方法およびその装置 |
JP2000208487A (ja) * | 1999-01-11 | 2000-07-28 | Speedfam-Ipec Co Ltd | 局部エッチング装置及び局部エッチング方法 |
JP2001020076A (ja) * | 1999-07-06 | 2001-01-23 | Hitachi Kokusai Electric Inc | 反応室のクリーニング方法及び装置 |
JP2001110779A (ja) * | 1999-10-06 | 2001-04-20 | Chemitoronics Co Ltd | プラズマエッチング装置 |
JP3908990B2 (ja) * | 2002-07-22 | 2007-04-25 | スピードファム株式会社 | 局所ドライエッチング方法 |
TW200405770A (en) * | 2002-08-30 | 2004-04-01 | Axcelis Tech Inc | Gas tube end cap for a microwave plasma generator |
US8298336B2 (en) * | 2005-04-01 | 2012-10-30 | Lam Research Corporation | High strip rate downstream chamber |
JP2011029475A (ja) * | 2009-07-28 | 2011-02-10 | Shibaura Mechatronics Corp | プラズマ処理装置及びプラズマ処理方法 |
JP5721132B2 (ja) * | 2009-12-10 | 2015-05-20 | オルボテック エルティ ソラー,エルエルシー | 真空処理装置用シャワーヘッド・アセンブリ及び真空処理装置用シャワーヘッド・アセンブリを真空処理チャンバに締結する方法 |
-
2016
- 2016-03-25 JP JP2016061803A patent/JP6739201B2/ja active Active
-
2017
- 2017-03-20 US US15/463,941 patent/US20170278674A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20170278674A1 (en) | 2017-09-28 |
JP2017175053A (ja) | 2017-09-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11664199B2 (en) | Substrate processing apparatus and substrate processing method | |
US11251068B2 (en) | Substrate processing apparatus and substrate processing method | |
US7700376B2 (en) | Edge temperature compensation in thermal processing particularly useful for SOI wafers | |
JP4900956B2 (ja) | ガス供給機構及び基板処理装置 | |
JP6739201B2 (ja) | 局所ドライエッチング装置 | |
JP6322117B2 (ja) | 局所ドライエッチング装置 | |
KR20210095196A (ko) | 플라스마 처리 장치 | |
JP7012602B2 (ja) | 局所ドライエッチング装置 | |
US7094355B2 (en) | Local dry etching method | |
JP2009224422A (ja) | 半導体装置の製造方法及び半導体製造装置 | |
JP6318363B2 (ja) | プラズマ処理装置及び方法、電子デバイスの製造方法 | |
JP7104973B2 (ja) | 局所ドライエッチング装置 | |
JP6046580B2 (ja) | 局所ドライエッチング装置及び局所ドライエッチング加工方法 | |
JP7348640B2 (ja) | エッチング装置、およびエッチング方法 | |
TWI838863B (zh) | 基板處理裝置 | |
KR101713628B1 (ko) | 기판처리장치 및 그에 사용되는 히터 조립체 | |
JP6689965B2 (ja) | 成膜用マスク及び成膜装置 | |
KR102117687B1 (ko) | 저온 다결정 실리콘 결정화 증착 방법 | |
KR20220111644A (ko) | 가열 처리 장치 | |
JPH02248041A (ja) | レーザ光照射装置 | |
KR100763681B1 (ko) | 고밀도 플라즈마 화학기상증착 장치의 제어 장치 및 그방법 | |
KR100226747B1 (ko) | 금속 리플로우장치 | |
JP2022139625A (ja) | 真空処理装置および傾き調整方法 | |
KR20230098392A (ko) | 벨로우즈 및 이를 사용한 기판 처리 장치 | |
CN113937029A (zh) | 一种晶圆片处理装置及其送气装置、晶圆片处理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180912 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20180912 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190531 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190611 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190731 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191210 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200130 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200714 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200721 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6739201 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |