JP2010516060A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2010516060A JP2010516060A JP2009545646A JP2009545646A JP2010516060A JP 2010516060 A JP2010516060 A JP 2010516060A JP 2009545646 A JP2009545646 A JP 2009545646A JP 2009545646 A JP2009545646 A JP 2009545646A JP 2010516060 A JP2010516060 A JP 2010516060A
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor structure
- regions
- type
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 163
- 239000012535 impurity Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 41
- 239000003989 dielectric material Substances 0.000 claims description 13
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 claims description 10
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- 230000015556 catabolic process Effects 0.000 description 27
- 230000002441 reversible effect Effects 0.000 description 26
- 230000005684 electric field Effects 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 229910016569 AlF 3 Inorganic materials 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- IYLGZMTXKJYONK-ACLXAEORSA-N (12s,15r)-15-hydroxy-11,16-dioxo-15,20-dihydrosenecionan-12-yl acetate Chemical compound O1C(=O)[C@](CC)(O)C[C@@H](C)[C@](C)(OC(C)=O)C(=O)OCC2=CCN3[C@H]2[C@H]1CC3 IYLGZMTXKJYONK-ACLXAEORSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- -1 cesium or potassium Chemical class 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- IYLGZMTXKJYONK-UHFFFAOYSA-N ruwenine Natural products O1C(=O)C(CC)(O)CC(C)C(C)(OC(C)=O)C(=O)OCC2=CCN3C2C1CC3 IYLGZMTXKJYONK-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66537—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a self aligned punch through stopper or threshold implant under the gate region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66666—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823885—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Composite Materials (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
本出願は、合衆国法典第35巻第119(e)の下で、2007年1月9日に出願された米国暫定特許出願60/879,434号、名称「Power MOS Transistor」の利益を主張するものであり、参照することによりその全体の内容が本願明細書に組み込まれる。
[背景技術]
本発明は、電子装置に関し、より具体的には、高電圧を維持するように適合された半導体装置に関する。
[発明の概要]
半導体構造体は、本発明の一実施形態によれば、部分的に、多数の半導体領域と、少なくとも一対の誘電体領域と、一対の端子とを含む。半導体構造体の第1および第2の領域は、それぞれ第1および第2の端子に結合される。半導体構造体の第3の領域は、単一の導電型であり、第1および第2の領域間に配置される。誘電体領域は、第3の領域内に延在する。第3の領域内に存在する不純物のドープ濃度、および誘電体領域間の距離は、半導体構造体の電気的特性を画定する。半導体構造体の電気的特性は、誘電体領域の幅に依存しない。第1および第2の領域は、反対の導電型である。
一実施形態では、第1および第2の領域は、それぞれn+型およびp+型領域であり、第1および第2の端子は、それぞれカソードおよびアノード端子である。一実施形態では、第3の領域は、p型領域である。別の実施形態では、第3の領域は、n型領域である。一実施形態では、第3の領域は、第2の領域の上方に形成され、第1の領域は、第3の領域の上方に形成される。一実施形態では、第3の領域は、第2の領域の上方に形成され、第1の領域は、第3の領域の上方に形成される。一実施形態では、誘電体領域のそれぞれは、誘電体領域の一端の近くの幅が、誘電体領域の他端よりも広くなるようにテーパ状である。
一実施形態では、第1および第2の領域は、それぞれn+型およびp+型領域であり、第1および第2の端子は、それぞれカソードおよびアノード端子である。一実施形態では、第3の領域は、p型領域である。一実施形態では、第3の領域は、p型領域である。別の実施形態では、第3の領域は、n型領域である。一実施形態では、第3の領域は、第2の領域の上方に形成され、第1の領域は、第3の領域の上方に形成される。一実施形態では、第3の領域は、第2の領域の上方に形成され、第1の領域は、第3の領域の上方に形成される。一実施形態では、誘電体領域のそれぞれは、誘電体領域の一端の近くの幅が、誘電体領域の他端よりも広くなるようにテーパ状である。
Claims (71)
- 半導体構造体であって、
前記構造体の第1の端子に結合された第1の領域と、
前記構造体の第2の端子に結合された第2の領域と、
前記第1の領域と第2の領域との間に配置された単一の導電型の第3の領域と、
前記第3の領域の深さに沿って第1の距離だけ延在する、少なくとも第1および第2の誘電体領域と、
を備え、前記第3の領域内に存在する不純物のドープ濃度、および前記少なくとも第1の誘電体領域と第2の誘電体領域との間の距離は、前記半導体構造体の電気的特性を画定し、前記電気的特性は、前記誘電体領域の幅に依存せず、かつ、前記第1および第2の領域は、相反する導電型である、
半導体構造体。 - 前記少なくとも第1および第2の誘電体領域は、前記第1および第2の領域内に延在する、請求項1に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域の表面に平行な線に沿った、前記第3の領域内の不純物の集積ドープ密度は、約1×1012/cm2から約5×1012/cm2までの範囲である、請求項1に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれは、第1および第2の材料をさらに含む、請求項1に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれは、注入された正の電荷をさらに備える、請求項1に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれは、注入された負の電荷をさらに備える、請求項1に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれにおける前記第2の材料は、フッ化アルミニウムを含む、請求項4に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれは、第3の材料をさらに含み、前記第3の材料は、誘電体材料である、請求項4に記載の半導体構造体。
- 各誘電体領域内の前記第1および第3の材料は、同じ材料である、請求項8に記載の半導体構造体。
- 前記第1および第2の領域は、それぞれp+型およびn+型領域であり、前記第1および第2の端子は、それぞれアノードおよびカソード端子であり、前記第3の領域は、p型領域である、請求項1に記載の半導体構造体。
- 前記第3の領域は、前記第2の領域の上方に形成され、前記第1の領域は、前記第3の領域の上方に形成される、請求項10に記載の半導体構造体。
- 前記第1および第2の領域は、それぞれp+型およびn+型領域であり、前記第1および第2の端子は、それぞれアノードおよびカソード端子であり、前記第3の領域は、n型領域である、請求項1に記載の半導体構造体。
- 前記第3の領域は、前記第2の領域の上方に形成され、前記第1の領域は、前記第3の領域の上方に形成される、請求項12に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域は、互いに隔離される、請求項1に記載の半導体構造体。
- 前記半導体構造体は、前記第2の領域と前記第3の領域との間に配置された第4の領域をさらに備え、前記第2の領域および第4の領域は、同じ導電型である、請求項1に記載の半導体構造体。
- 前記第1および第2の領域は、それぞれn+型およびp+型領域であり、前記第1および第2の端子は、それぞれカソードおよびアノード端子であり、前記第3の領域は、p型領域である、請求項1に記載の半導体構造体。
- 前記第3の領域は、前記第2の領域の上方に形成され、前記第1の領域は、前記第3の領域の上方に形成される、請求項14に記載の半導体構造体。
- 前記第1および第2の領域は、それぞれn+型およびp+型領域であり、前記第1および第2の端子は、それぞれカソードおよびアノード端子であり、前記第3の領域は、n型領域である、請求項1に記載の半導体構造体。
- 前記第3の領域は、前記第2の領域の上方に形成され、前記第1の領域は、前記第3の領域の上方に形成される、請求項16に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれは、前記誘電体領域の一端近くが、前記誘電体領域の他端よりも幅が広くなるようにテーパ状である、請求項1に記載の半導体構造体。
- 前記第1、第2、および第3の領域は、前記半導体構造体が形成される半導体基板の同じ表面に沿って形成される、請求項1に記載の半導体構造体。
- 前記第2の領域が形成される第4の領域をさらに備え、前記第3の領域は、前記第1および第4の領域に隣接する、請求項21に記載の半導体構造体。
- 前記第1の領域は、p+型領域であり、前記第2の領域は、n+型領域であり、前記第3の領域は、p型領域であり、前記第4の領域は、n型領域である、請求項22に記載の半導体構造体。
- 前記第1の領域は、p+型領域であり、前記第2の領域は、n+型領域であり、前記第3の領域は、n型領域であり、前記第4の領域は、p型領域である、請求項22に記載の半導体構造体。
- 半導体構造体であって、
前記構造体の第1の端子に結合された第1の領域と、
前記構造体の第2の端子に結合された第2の領域と、
前記第1の領域と第2の領域との間に配置された第3の領域と、
前記第3の領域の深さに沿って第1の距離だけ延在する、少なくとも第1および第2の誘電体領域と、
を備え、前記第1および第2の領域は、相反する導電型であり、前記少なくとも第1および第2の誘電体領域、または前記少なくとも第1および第2の誘電体領域のそれぞれと、前記第3の領域との間の界面領域は、意図的に導入された電荷を含む、
半導体構造体。 - 前記少なくとも第1および第2の誘電体領域は、前記第1および第2の領域内に延在する、請求項25に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域の表面に平行な線に沿った、前記第3の領域内の不純物の集積ドープ密度は、約1×1012/cm2から約5×1012/cm2までの範囲である、請求項25に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれは、第1および第2の材料をさらに含む、請求項25に記載の半導体構造体。
- 前記意図的に導入された電荷は、注入された正の電荷である、請求項25に記載の半導体構造体。
- 前記意図的に導入された電荷は、注入された負の電荷である、請求項25に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれにおける前記第2の材料は、フッ化アルミニウムを含む、請求項28に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれは、第3の材料をさらに含み、前記第3の材料は、誘電体材料である、請求項28に記載の半導体構造体。
- 各誘電体領域内の前記第1および第3の材料は、同じ材料である、請求項32に記載の半導体構造体。
- 前記第1および第2の領域は、それぞれp+型およびn+型領域であり、前記第1および第2の端子は、それぞれアノードおよびカソード端子であり、前記第3の領域は、p型領域である、請求項25に記載の半導体構造体。
- 前記第3の領域は、前記第2の領域の上方に形成され、前記第1の領域は、前記第3の領域の上方に形成される、請求項34に記載の半導体構造体。
- 前記第1および第2の領域は、それぞれp+型およびn+型領域であり、前記第1および第2の端子は、それぞれアノードおよびカソード端子であり、前記第3の領域は、n型領域である、請求項25に記載の半導体構造体。
- 前記第3の領域は、前記第2の領域の上方に形成され、前記第1の領域は、前記第3の領域の上方に形成される、請求項36に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域は、互いに隔離される、請求項25に記載の半導体構造体。
- 前記半導体構造体は、前記第2の領域と前記第3の領域との間に配置された第4の領域をさらに備え、前記第2および第4の領域は、同じ導電型である、請求項25に記載の半導体構造体。
- 前記第1および第2の領域は、それぞれn+型およびp+型領域であり、前記第1および第2の端子は、それぞれカソードおよびアノード端子であり、前記第3の領域は、p型領域である、請求項25に記載の半導体構造体。
- 前記第3の領域は、前記第2の領域の上方に形成され、前記第1の領域は、前記第3の領域の上方に形成される、請求項34に記載の半導体構造体。
- 前記第1および第2の領域は、それぞれn+型およびp+型領域であり、前記第1および第2の端子は、それぞれカソードおよびアノード端子であり、前記第3の領域は、n型領域である、請求項25に記載の半導体構造体。
- 前記第3の領域は、前記第2の領域の上方に形成され、前記第1の領域は、前記第3の領域の上方に形成される、請求項34に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれは、前記誘電体領域の一端近くが、前記誘電体領域の他端よりも幅が広くなるようにテーパ状である、請求項34に記載の半導体構造体。
- 前記第1、第2、および第3の領域は、前記半導体構造体が形成される半導体基板の同じ表面に沿って形成される、請求項34に記載の半導体構造体。
- 前記第2の領域が形成される第4の領域をさらに備え、前記第3の領域は、前記第1および第4の領域に隣接する、請求項45に記載の半導体構造体。
- 前記第1の領域は、p+型領域であり、前記第2の領域は、n+型領域であり、前記第3の領域は、p型領域であり、前記第4の領域は、n型領域である、請求項46に記載の半導体構造体。
- 前記第1の領域は、p+型領域であり、前記第2の領域は、n+型領域であり、前記第3の領域は、n型領域であり、前記第4の領域は、p型領域である、請求項46に記載の半導体構造体。
- 半導体構造体であって、
前記構造体の第1の端子に結合された第1の領域と、
前記構造体の第2の端子に結合された第2の領域と、
前記第1の領域と第2の領域との間に配置された第3の領域と、
前記第3の領域の深さに沿って第1の距離だけ延在し、前記第3の領域の導電型とは相反する導電型を有する第4の領域であって、前記第1および第2に隣接する第4の領域と、
前記第3の領域の深さに沿って第2の距離だけ延在する少なくとも第1および第2の誘電体領域と、
を備え、前記第1および第2の領域は、相反する導電型であり、前記第4の領域は、前記少なくとも第1および第2の誘電体領域の一部を囲み、前記少なくとも第1および第2の誘電体領域、または前記少なくとも第1および第2の誘電体領域のそれぞれと、前記第4の領域との間の界面領域は、意図的に導入された電荷を含む、
半導体構造体。 - 前記少なくとも第1および第2の誘電体領域は、前記第1および第2の領域内に延在する、請求項49に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれは、第1および第2の材料をさらに含む、請求項49に記載の半導体構造体。
- 前記意図的に導入された電荷は、注入された正の電荷である、請求項49に記載の半導体構造体。
- 前記意図的に導入された電荷は、注入された負の電荷である、請求項49に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれにおける前記第2の材料は、フッ化アルミニウムを含む、請求項51に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれは、第3の材料をさらに含み、前記第3の材料は、誘電体材料である、請求項51に記載の半導体構造体。
- 各誘電体領域内の前記第1および第3の材料は、同じ材料である、請求項55に記載の半導体構造体。
- 前記第1および第2の領域は、それぞれp+型およびn+型領域であり、前記第1および第2の端子は、それぞれアノードおよびカソード端子であり、前記第3の領域は、p型領域である、請求項49に記載の半導体構造体。
- 前記第3の領域は、前記第2の領域の上方に形成され、前記第1の領域は、前記第3の領域の上方に形成される、請求項57に記載の半導体構造体。
- 前記第1および第2の領域は、それぞれp+型およびn+型領域であり、前記第1および第2の端子は、それぞれアノードおよびカソード端子であり、前記第3の領域は、n型領域である、請求項49に記載の半導体構造体。
- 前記第3の領域は、前記第2の領域の上方に形成され、前記第1の領域は、前記第3の領域の上方に形成される、請求項59に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域は、互いに隔離される、請求項49に記載の半導体構造体。
- 前記半導体構造体は、前記第2、前記第3、および前記第4の領域間に配置された第5の領域をさらに備え、前記第2および第5の領域は、同じ導電型である、請求項49に記載の半導体構造体。
- 前記第1および第2の領域は、それぞれn+型およびp+型領域であり、前記第1および第2の端子は、それぞれカソードおよびアノード端子であり、前記第3の領域は、p型領域である、請求項49に記載の半導体構造体。
- 前記第3の領域は、前記第2の領域の上方に形成され、前記第1の領域は、前記第3の領域の上方に形成される、請求項63に記載の半導体構造体。
- 前記第1および第2の領域は、それぞれn+型およびp+型領域であり、前記第1および第2の端子は、それぞれカソードおよびアノード端子であり、前記第3の領域は、n型領域である、請求項49に記載の半導体構造体。
- 前記第3の領域は、前記第2の領域の上方に形成され、前記第1の領域は、前記第3の領域の上方に形成される、請求項65に記載の半導体構造体。
- 前記少なくとも第1および第2の誘電体領域のそれぞれは、前記誘電体領域の一端近くが、前記誘電体領域の他端よりも幅が広くなるようにテーパ状である、請求項49に記載の半導体構造体。
- 前記第1、第2、および第3の領域は、前記半導体構造体が形成される半導体基板の同じ表面に沿って形成される、請求項49に記載の半導体構造体。
- 前記第2の領域が形成される第5の領域をさらに備え、前記第3の領域は、前記第1および第5の領域に隣接する、請求項68に記載の半導体構造体。
- 前記第1の領域は、p+型領域であり、前記第2の領域は、n+型領域であり、前記第3の領域は、p型領域であり、前記第4の領域は、n型領域である、請求項69に記載の半導体構造体。
- 前記第1の領域は、p+型領域であり、前記第2の領域は、n+型領域であり、前記第3の領域は、n型領域であり、前記第4の領域は、p型領域である、請求項69に記載の半導体構造体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US87943407P | 2007-01-09 | 2007-01-09 | |
US60/879,434 | 2007-01-09 | ||
PCT/US2008/050532 WO2008086366A2 (en) | 2007-01-09 | 2008-01-08 | Semiconductor device |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010516060A true JP2010516060A (ja) | 2010-05-13 |
JP2010516060A5 JP2010516060A5 (ja) | 2011-02-17 |
JP5479915B2 JP5479915B2 (ja) | 2014-04-23 |
Family
ID=39593513
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009545640A Expired - Fee Related JP5666135B2 (ja) | 2007-01-09 | 2008-01-08 | 半導体装置 |
JP2009545646A Active JP5479915B2 (ja) | 2007-01-09 | 2008-01-08 | 半導体装置 |
JP2014249929A Pending JP2015092593A (ja) | 2007-01-09 | 2014-12-10 | 半導体装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009545640A Expired - Fee Related JP5666135B2 (ja) | 2007-01-09 | 2008-01-08 | 半導体装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014249929A Pending JP2015092593A (ja) | 2007-01-09 | 2014-12-10 | 半導体装置 |
Country Status (6)
Country | Link |
---|---|
US (14) | US8659074B2 (ja) |
EP (2) | EP2109892A4 (ja) |
JP (3) | JP5666135B2 (ja) |
KR (2) | KR101452949B1 (ja) |
CN (2) | CN101689562B (ja) |
WO (2) | WO2008086348A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015195366A (ja) * | 2014-03-17 | 2015-11-05 | 株式会社東芝 | 半導体装置 |
US10141455B2 (en) | 2014-03-17 | 2018-11-27 | Kabushiki Kaisha Toshiba | Semiconductor device |
Families Citing this family (182)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6838722B2 (en) * | 2002-03-22 | 2005-01-04 | Siliconix Incorporated | Structures of and methods of fabricating trench-gated MIS devices |
US8093621B2 (en) | 2008-12-23 | 2012-01-10 | Power Integrations, Inc. | VTS insulated gate bipolar transistor |
US9437729B2 (en) * | 2007-01-08 | 2016-09-06 | Vishay-Siliconix | High-density power MOSFET with planarized metalization |
US8659074B2 (en) * | 2007-01-09 | 2014-02-25 | Maxpower Semiconductor, Inc. | Semiconductor device |
JP2008235788A (ja) * | 2007-03-23 | 2008-10-02 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置 |
US9947770B2 (en) | 2007-04-03 | 2018-04-17 | Vishay-Siliconix | Self-aligned trench MOSFET and method of manufacture |
JP2009026809A (ja) * | 2007-07-17 | 2009-02-05 | Toyota Motor Corp | 半導体装置とその製造方法 |
US9484451B2 (en) | 2007-10-05 | 2016-11-01 | Vishay-Siliconix | MOSFET active area and edge termination area charge balance |
US8710568B2 (en) * | 2007-10-24 | 2014-04-29 | Denso Corporation | Semiconductor device having a plurality of elements on one semiconductor substrate and method of manufacturing the same |
EP2269226A1 (en) | 2008-03-13 | 2011-01-05 | S.O.I.Tec Silicon on Insulator Technologies | Substrate having a charged zone in an insulating buried layer |
US7911021B2 (en) * | 2008-06-02 | 2011-03-22 | Maxpower Semiconductor Inc. | Edge termination for semiconductor devices |
US8310001B2 (en) * | 2008-07-15 | 2012-11-13 | Maxpower Semiconductor Inc. | MOSFET switch with embedded electrostatic charge |
EP2308095A1 (en) * | 2008-07-25 | 2011-04-13 | Nxp B.V. | A trench-gate semiconductor device |
US7960783B2 (en) * | 2008-08-25 | 2011-06-14 | Maxpower Semiconductor Inc. | Devices containing permanent charge |
US8022474B2 (en) * | 2008-09-30 | 2011-09-20 | Infineon Technologies Austria Ag | Semiconductor device |
TWI387106B (zh) * | 2008-10-16 | 2013-02-21 | Vanguard Int Semiconduct Corp | 閘極絕緣雙接面電晶體(igbt)靜電放電防護元件 |
WO2010065428A2 (en) * | 2008-12-01 | 2010-06-10 | Maxpower Semiconductor Inc. | Mos-gated power devices, methods, and integrated circuits |
JP2010135594A (ja) * | 2008-12-05 | 2010-06-17 | Toyota Central R&D Labs Inc | ダイオード |
US8278691B2 (en) * | 2008-12-11 | 2012-10-02 | Micron Technology, Inc. | Low power memory device with JFET device structures |
US7871882B2 (en) | 2008-12-20 | 2011-01-18 | Power Integrations, Inc. | Method of fabricating a deep trench insulated gate bipolar transistor |
US20100155831A1 (en) * | 2008-12-20 | 2010-06-24 | Power Integrations, Inc. | Deep trench insulated gate bipolar transistor |
US8049307B2 (en) | 2009-01-23 | 2011-11-01 | Vanguard International Semiconductor Corporation | Insulated gate bipolar transistor (IGBT) electrostatic discharge (ESD) protection devices |
US8319278B1 (en) | 2009-03-31 | 2012-11-27 | Maxpower Semiconductor, Inc. | Power device structures and methods using empty space zones |
US8847307B2 (en) | 2010-04-13 | 2014-09-30 | Maxpower Semiconductor, Inc. | Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges |
FR2945672A1 (fr) * | 2009-05-18 | 2010-11-19 | St Microelectronics Sa | Photodiode a controle de charge d'interface par implantation et procede associe. |
FR2945671A1 (fr) * | 2009-05-18 | 2010-11-19 | St Microelectronics Sa | Photodiode a controle de charge d'interface et procede associe. |
US8330214B2 (en) * | 2009-05-28 | 2012-12-11 | Maxpower Semiconductor, Inc. | Power semiconductor device |
US10205017B2 (en) * | 2009-06-17 | 2019-02-12 | Alpha And Omega Semiconductor Incorporated | Bottom source NMOS triggered Zener clamp for configuring an ultra-low voltage transient voltage suppressor (TVS) |
US8310007B2 (en) * | 2009-07-13 | 2012-11-13 | Maxpower Semiconductor Inc. | Integrated power supplies and combined high-side plus low-side switches |
US9443974B2 (en) | 2009-08-27 | 2016-09-13 | Vishay-Siliconix | Super junction trench power MOSFET device fabrication |
US9431530B2 (en) * | 2009-10-20 | 2016-08-30 | Vishay-Siliconix | Super-high density trench MOSFET |
US9425305B2 (en) | 2009-10-20 | 2016-08-23 | Vishay-Siliconix | Structures of and methods of fabricating split gate MIS devices |
US9419129B2 (en) | 2009-10-21 | 2016-08-16 | Vishay-Siliconix | Split gate semiconductor device with curved gate oxide profile |
US10026835B2 (en) * | 2009-10-28 | 2018-07-17 | Vishay-Siliconix | Field boosted metal-oxide-semiconductor field effect transistor |
DE102009051745B4 (de) | 2009-11-03 | 2017-09-21 | Austriamicrosystems Ag | Hochvolt-Transistor mit Mehrfach-Dielektrikum und Herstellungsverfahren |
US8198678B2 (en) * | 2009-12-09 | 2012-06-12 | Infineon Technologies Austria Ag | Semiconductor device with improved on-resistance |
US8546893B2 (en) * | 2010-01-12 | 2013-10-01 | Mohamed N. Darwish | Devices, components and methods combining trench field plates with immobile electrostatic charge |
EP2543072B1 (en) | 2010-03-02 | 2021-10-06 | Vishay-Siliconix | Structures and methods of fabricating dual gate devices |
JP2011233701A (ja) * | 2010-04-27 | 2011-11-17 | Toshiba Corp | 電力用半導体素子 |
WO2012006261A2 (en) * | 2010-07-06 | 2012-01-12 | Maxpower Semiconductor Inc. | Power semiconductor devices, structures, and related methods |
US8786012B2 (en) | 2010-07-26 | 2014-07-22 | Infineon Technologies Austria Ag | Power semiconductor device and a method for forming a semiconductor device |
US8614478B2 (en) * | 2010-07-26 | 2013-12-24 | Infineon Technologies Austria Ag | Method for protecting a semiconductor device against degradation, a semiconductor device protected against hot charge carriers and a manufacturing method therefor |
CN102403354A (zh) * | 2010-09-15 | 2012-04-04 | 无锡华润上华半导体有限公司 | Coo1MOS器件及其制造方法 |
CN102130182B (zh) * | 2010-11-03 | 2012-11-21 | 绍兴旭昌科技企业有限公司 | 一种电流调整二极管芯片及其制造方法 |
CN102569384B (zh) * | 2010-12-17 | 2015-07-01 | 无锡华润上华半导体有限公司 | 沟槽mosfet器件及其制作方法 |
US8841664B2 (en) * | 2011-03-04 | 2014-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8754472B2 (en) * | 2011-03-10 | 2014-06-17 | O2Micro, Inc. | Methods for fabricating transistors including one or more circular trenches |
US8598654B2 (en) * | 2011-03-16 | 2013-12-03 | Fairchild Semiconductor Corporation | MOSFET device with thick trench bottom oxide |
TW201240087A (en) * | 2011-03-30 | 2012-10-01 | Anpec Electronics Corp | Power device with boundary trench structure |
JP5729331B2 (ja) * | 2011-04-12 | 2015-06-03 | 株式会社デンソー | 半導体装置の製造方法及び半導体装置 |
CN102191563B (zh) * | 2011-04-22 | 2012-09-19 | 中国科学院半导体研究所 | 共掺杂的硅基杂质中间带材料的制备方法 |
US8692318B2 (en) * | 2011-05-10 | 2014-04-08 | Nanya Technology Corp. | Trench MOS structure and method for making the same |
US8912595B2 (en) * | 2011-05-12 | 2014-12-16 | Nanya Technology Corp. | Trench MOS structure and method for forming the same |
DE112012002136T5 (de) | 2011-05-18 | 2014-03-13 | Vishay-Siliconix | Halbleitervorrichtung |
JP5874893B2 (ja) * | 2011-05-23 | 2016-03-02 | サンケン電気株式会社 | 半導体装置 |
CN102420117A (zh) * | 2011-06-07 | 2012-04-18 | 上海华力微电子有限公司 | 一种改善后栅极pmos负偏压温度不稳定性的方法 |
US8680607B2 (en) * | 2011-06-20 | 2014-03-25 | Maxpower Semiconductor, Inc. | Trench gated power device with multiple trench width and its fabrication process |
US9984894B2 (en) * | 2011-08-03 | 2018-05-29 | Cree, Inc. | Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions |
US9818859B2 (en) * | 2011-08-26 | 2017-11-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Quasi-vertical power MOSFET and methods of forming the same |
CN102569091B (zh) * | 2011-08-29 | 2014-07-23 | 上海华力微电子有限公司 | 一种后栅极单晶体管动态随机存储器的制备方法 |
US8816503B2 (en) * | 2011-08-29 | 2014-08-26 | Infineon Technologies Austria Ag | Semiconductor device with buried electrode |
CN103021853B (zh) * | 2011-09-23 | 2015-11-11 | 北大方正集团有限公司 | 处理半导体器件的方法及半导体器件 |
JP5849882B2 (ja) * | 2011-09-27 | 2016-02-03 | 株式会社デンソー | 縦型半導体素子を備えた半導体装置 |
JP2013093560A (ja) * | 2011-10-06 | 2013-05-16 | Denso Corp | 縦型半導体素子を備えた半導体装置 |
US9431249B2 (en) | 2011-12-01 | 2016-08-30 | Vishay-Siliconix | Edge termination for super junction MOSFET devices |
US9614043B2 (en) | 2012-02-09 | 2017-04-04 | Vishay-Siliconix | MOSFET termination trench |
US9209294B1 (en) | 2012-02-10 | 2015-12-08 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device and method for manufacturing same |
US9048118B2 (en) * | 2012-02-13 | 2015-06-02 | Maxpower Semiconductor Inc. | Lateral transistors with low-voltage-drop shunt to body diode |
CN102569411B (zh) * | 2012-03-02 | 2014-12-03 | 成都芯源系统有限公司 | 半导体器件及其制作方法 |
CN103325685A (zh) * | 2012-03-23 | 2013-09-25 | 无锡维赛半导体有限公司 | 深沟槽功率半导体场效应晶体管及其制作方法 |
TWM439885U (en) * | 2012-04-13 | 2012-10-21 | Taiwan Semiconductor Co Ltd | Semiconductor component trench structure |
TWM435716U (en) * | 2012-04-13 | 2012-08-11 | Taiwan Semiconductor Co Ltd | The active region of the trench distributed arrangement of the semiconductor device structure |
WO2013166079A1 (en) * | 2012-04-30 | 2013-11-07 | Vishay-Siliconix | Integrated circuit design |
US9099519B2 (en) * | 2012-05-23 | 2015-08-04 | Great Wall Semiconductor Corporation | Semiconductor device and method of forming junction enhanced trench power MOSFET |
US9842911B2 (en) | 2012-05-30 | 2017-12-12 | Vishay-Siliconix | Adaptive charge balanced edge termination |
JP2013251397A (ja) * | 2012-05-31 | 2013-12-12 | Denso Corp | 半導体装置 |
US8921931B2 (en) * | 2012-06-04 | 2014-12-30 | Infineon Technologies Austria Ag | Semiconductor device with trench structures including a recombination structure and a fill structure |
JP6061504B2 (ja) * | 2012-06-07 | 2017-01-18 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
US9293357B2 (en) * | 2012-07-02 | 2016-03-22 | Texas Instruments Incorporated | Sinker with a reduced width |
US9130060B2 (en) | 2012-07-11 | 2015-09-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit having a vertical power MOS transistor |
US8669611B2 (en) * | 2012-07-11 | 2014-03-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for power MOS transistor |
US8829562B2 (en) * | 2012-07-24 | 2014-09-09 | Infineon Technologies Ag | Semiconductor device including a dielectric structure in a trench |
US8598655B1 (en) * | 2012-08-03 | 2013-12-03 | Infineon Technologies Dresden Gmbh | Semiconductor device and method for manufacturing a semiconductor device |
KR101920247B1 (ko) * | 2012-09-17 | 2018-11-20 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
US9941403B2 (en) * | 2012-09-26 | 2018-04-10 | Infineon Technologies Ag | Semiconductor device and method for manufacturing a semiconductor device |
CN103854979B (zh) * | 2012-11-28 | 2017-03-29 | 上海华虹宏力半导体制造有限公司 | 一种超级结外延cmp工艺方法 |
US9799762B2 (en) | 2012-12-03 | 2017-10-24 | Infineon Technologies Ag | Semiconductor device and method of manufacturing a semiconductor device |
US9853140B2 (en) * | 2012-12-31 | 2017-12-26 | Vishay-Siliconix | Adaptive charge balanced MOSFET techniques |
CN103035745B (zh) * | 2012-12-31 | 2016-01-20 | 杭州士兰集成电路有限公司 | 采用刻槽工艺形成的恒流二极管及其制造方法 |
US9245994B2 (en) * | 2013-02-07 | 2016-01-26 | Texas Instruments Incorporated | MOSFET with curved trench feature coupling termination trench to active trench |
US8748976B1 (en) * | 2013-03-06 | 2014-06-10 | Texas Instruments Incorporated | Dual RESURF trench field plate in vertical MOSFET |
US9012984B2 (en) * | 2013-03-13 | 2015-04-21 | Cree, Inc. | Field effect transistor devices with regrown p-layers |
US9306061B2 (en) | 2013-03-13 | 2016-04-05 | Cree, Inc. | Field effect transistor devices with protective regions |
US9240476B2 (en) | 2013-03-13 | 2016-01-19 | Cree, Inc. | Field effect transistor devices with buried well regions and epitaxial layers |
US9142668B2 (en) | 2013-03-13 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with buried well protection regions |
CN103219386B (zh) * | 2013-04-22 | 2016-01-20 | 南京邮电大学 | 一种具有高k绝缘区的横向功率器件 |
JP2014216573A (ja) * | 2013-04-26 | 2014-11-17 | 株式会社東芝 | 半導体装置 |
US9000515B2 (en) * | 2013-05-22 | 2015-04-07 | Force Mos Technology Co., Ltd. | Super-junction trench MOSFETs with short terminations |
US9620637B2 (en) * | 2013-05-24 | 2017-04-11 | Infineon Technologies Ag | Semiconductor device comprising a gate electrode connected to a source terminal |
US9269713B2 (en) * | 2013-06-04 | 2016-02-23 | Infineon Technologies Austria Ag | Semiconductor device and method for producing the same |
US20150035002A1 (en) * | 2013-07-31 | 2015-02-05 | Infineon Technologies Austria Ag | Super Junction Semiconductor Device and Manufacturing Method |
US9224768B2 (en) * | 2013-08-05 | 2015-12-29 | Raytheon Company | Pin diode structure having surface charge suppression |
US9111766B2 (en) * | 2013-09-24 | 2015-08-18 | Infineon Technologies Austria Ag | Transistor device with a field electrode |
US9306058B2 (en) | 2013-10-02 | 2016-04-05 | Infineon Technologies Ag | Integrated circuit and method of manufacturing an integrated circuit |
US9287404B2 (en) | 2013-10-02 | 2016-03-15 | Infineon Technologies Austria Ag | Semiconductor device and method of manufacturing a semiconductor device with lateral FET cells and field plates |
US9401399B2 (en) * | 2013-10-15 | 2016-07-26 | Infineon Technologies Ag | Semiconductor device |
US20150118810A1 (en) * | 2013-10-24 | 2015-04-30 | Madhur Bobde | Buried field ring field effect transistor (buf-fet) integrated with cells implanted with hole supply path |
CN203659877U (zh) | 2013-10-30 | 2014-06-18 | 英飞凌科技奥地利有限公司 | 超结器件和包括所述超结器件的半导体结构 |
KR20150051067A (ko) * | 2013-11-01 | 2015-05-11 | 삼성전기주식회사 | 전력 반도체 소자 및 그의 제조 방법 |
US10395970B2 (en) * | 2013-12-05 | 2019-08-27 | Vishay-Siliconix | Dual trench structure |
US9543389B2 (en) * | 2013-12-11 | 2017-01-10 | Infineon Technologies Ag | Semiconductor device with recombination region |
US9543396B2 (en) * | 2013-12-13 | 2017-01-10 | Power Integrations, Inc. | Vertical transistor device structure with cylindrically-shaped regions |
JP5989689B2 (ja) * | 2014-01-27 | 2016-09-07 | トヨタ自動車株式会社 | 半導体装置 |
US9761702B2 (en) | 2014-02-04 | 2017-09-12 | MaxPower Semiconductor | Power MOSFET having planar channel, vertical current path, and top drain electrode |
JP6226786B2 (ja) * | 2014-03-19 | 2017-11-08 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
CN106463508A (zh) | 2014-04-01 | 2017-02-22 | 英派尔科技开发有限公司 | 具有闪络保护的垂直晶体管 |
KR102242580B1 (ko) * | 2014-04-23 | 2021-04-22 | 삼성전자주식회사 | 이미지 센서 및 이의 제조 방법 |
US9385187B2 (en) * | 2014-04-25 | 2016-07-05 | Texas Instruments Incorporated | High breakdown N-type buried layer |
DE102014107325B4 (de) * | 2014-05-23 | 2023-08-10 | Infineon Technologies Ag | Halbleiterbauelement und verfahren zum herstellen eines halbleiterbauelements |
US9245754B2 (en) * | 2014-05-28 | 2016-01-26 | Mark E. Granahan | Simplified charge balance in a semiconductor device |
US9508596B2 (en) | 2014-06-20 | 2016-11-29 | Vishay-Siliconix | Processes used in fabricating a metal-insulator-semiconductor field effect transistor |
US9887259B2 (en) | 2014-06-23 | 2018-02-06 | Vishay-Siliconix | Modulated super junction power MOSFET devices |
CN107078161A (zh) | 2014-08-19 | 2017-08-18 | 维西埃-硅化物公司 | 电子电路 |
EP3183754A4 (en) | 2014-08-19 | 2018-05-02 | Vishay-Siliconix | Super-junction metal oxide semiconductor field effect transistor |
CN104201194B (zh) * | 2014-08-26 | 2016-10-05 | 电子科技大学 | 一种具有超低比导通电阻特性的高压功率器件 |
JP2016058679A (ja) * | 2014-09-12 | 2016-04-21 | 株式会社東芝 | 半導体装置およびその製造方法 |
US20180012974A1 (en) * | 2014-11-18 | 2018-01-11 | Rohm Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9406750B2 (en) | 2014-11-19 | 2016-08-02 | Empire Technology Development Llc | Output capacitance reduction in power transistors |
US9443973B2 (en) * | 2014-11-26 | 2016-09-13 | Infineon Technologies Austria Ag | Semiconductor device with charge compensation region underneath gate trench |
CN105826195B (zh) * | 2015-01-07 | 2018-12-04 | 北大方正集团有限公司 | 一种超结功率器件及其制作方法 |
DE102015100390B4 (de) * | 2015-01-13 | 2021-02-11 | Infineon Technologies Austria Ag | Halbleitervorrichtung mit feldplattenstrukturen und gateelektrodenstrukturen zwischen den feldplattenstrukturen sowie herstellungsverfahren |
JP2016134546A (ja) * | 2015-01-21 | 2016-07-25 | トヨタ自動車株式会社 | 半導体装置と、その製造方法 |
JP6126150B2 (ja) * | 2015-03-06 | 2017-05-10 | トヨタ自動車株式会社 | 半導体装置 |
US10854761B1 (en) * | 2015-03-30 | 2020-12-01 | Southern Methodist University | Electronic switch and active artificial dielectric |
US9299830B1 (en) * | 2015-05-07 | 2016-03-29 | Texas Instruments Incorporated | Multiple shielding trench gate fet |
DE102015109545B4 (de) * | 2015-06-15 | 2021-10-21 | Infineon Technologies Ag | Transistor mit Feldelektroden und verbessertem Lawinendurchbruchsverhalten |
US9673314B2 (en) | 2015-07-08 | 2017-06-06 | Vishay-Siliconix | Semiconductor device with non-uniform trench oxide layer |
DE102015111210A1 (de) * | 2015-07-10 | 2017-01-12 | Infineon Technologies Dresden Gmbh | Verfahren zum füllen eines grabens und halbleiterbauelement |
US9786753B2 (en) * | 2015-07-13 | 2017-10-10 | Diodes Incorporated | Self-aligned dual trench device |
WO2017019074A1 (en) * | 2015-07-30 | 2017-02-02 | Diodes Incorporated | Multi-trench semiconductor devices |
US10020362B2 (en) * | 2015-09-04 | 2018-07-10 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
CN105070760B (zh) * | 2015-09-06 | 2017-12-19 | 电子科技大学 | 一种功率mos器件 |
JP2017054958A (ja) * | 2015-09-10 | 2017-03-16 | 株式会社東芝 | 半導体装置 |
US20170077292A1 (en) * | 2015-09-10 | 2017-03-16 | Kabushiki Kaisha Toyota Jidoshokki | Trench-gate semiconductor device and manufacturing method thereof |
JP6551156B2 (ja) * | 2015-10-29 | 2019-07-31 | 富士電機株式会社 | スーパージャンクション型mosfetデバイスおよび半導体チップ |
DE102015122804B4 (de) * | 2015-12-23 | 2020-10-15 | Infineon Technologies Ag | Halbleitervorrichtung, enthaltend eine Wärmesenkenstruktur |
JP6701789B2 (ja) | 2016-02-19 | 2020-05-27 | 富士電機株式会社 | Rb‐igbt |
JP6523997B2 (ja) * | 2016-03-14 | 2019-06-05 | 株式会社東芝 | 半導体装置の製造方法 |
DE102016109555A1 (de) * | 2016-05-24 | 2017-11-30 | Infineon Technologies Austria Ag | Leistungshalbleiterbauelement und verfahren zur herstellung eines leistungshalbleiterbauelements |
DE102016112721B4 (de) * | 2016-07-12 | 2022-02-03 | Infineon Technologies Ag | n-Kanal-Leistungshalbleitervorrichtung mit p-Schicht im Driftvolumen |
JP6583169B2 (ja) * | 2016-07-19 | 2019-10-02 | 株式会社豊田自動織機 | トレンチゲート型半導体装置 |
CN106098781B (zh) * | 2016-08-17 | 2018-10-26 | 电子科技大学 | 一种沟槽结构的vdmos |
WO2018034818A1 (en) * | 2016-08-18 | 2018-02-22 | Maxpower Semiconductor Inc. | Power mosfet having planar channel, vertical current path, and top drain electrode |
US9985092B2 (en) * | 2016-09-13 | 2018-05-29 | Nexperia B.V. | PowerMOS |
JP6626021B2 (ja) * | 2017-02-15 | 2019-12-25 | トヨタ自動車株式会社 | 窒化物半導体装置 |
US10355072B2 (en) * | 2017-02-24 | 2019-07-16 | Globalfoundries Singapore Pte. Ltd. | Power trench capacitor compatible with deep trench isolation process |
EP3545556A4 (en) | 2017-03-30 | 2020-10-14 | INTEL Corporation | VERTICALLY STACKED TRANSISTORS IN A FIN |
JP6869791B2 (ja) * | 2017-04-21 | 2021-05-12 | 三菱電機株式会社 | 半導体スイッチング素子及びその製造方法 |
US10177044B2 (en) * | 2017-05-05 | 2019-01-08 | Newport Fab, Llc | Bulk CMOS RF switch with reduced parasitic capacitance |
CN109216256B (zh) | 2017-07-03 | 2021-01-05 | 无锡华润上华科技有限公司 | 沟槽隔离结构及其制造方法 |
KR102192651B1 (ko) * | 2017-08-23 | 2020-12-17 | 노을 주식회사 | 시약을 저장하는 저장 매체 및 이를 이용한 검사 방법 및 검사 모듈 |
KR102417367B1 (ko) * | 2017-12-14 | 2022-07-05 | 현대자동차 주식회사 | 반도체 소자 |
CN108550621A (zh) * | 2018-04-28 | 2018-09-18 | 重庆大学 | 一种具有变k介质槽的超结碳化硅vdmos器件 |
JP6626929B1 (ja) * | 2018-06-29 | 2019-12-25 | 京セラ株式会社 | 半導体デバイス及び電気装置 |
JP7210182B2 (ja) * | 2018-07-26 | 2023-01-23 | 株式会社東芝 | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 |
JP2019050434A (ja) * | 2019-01-04 | 2019-03-28 | 株式会社東芝 | 半導体装置 |
US11217541B2 (en) | 2019-05-08 | 2022-01-04 | Vishay-Siliconix, LLC | Transistors with electrically active chip seal ring and methods of manufacture |
CN110416305B (zh) * | 2019-06-27 | 2021-01-08 | 南京芯舟科技有限公司 | 元胞结构及其应用的半导体器件 |
US11171206B2 (en) | 2019-07-11 | 2021-11-09 | Micron Technology, Inc. | Channel conduction in semiconductor devices |
US12032014B2 (en) * | 2019-09-09 | 2024-07-09 | Analog Devices International Unlimited Company | Semiconductor device configured for gate dielectric monitoring |
US11218144B2 (en) | 2019-09-12 | 2022-01-04 | Vishay-Siliconix, LLC | Semiconductor device with multiple independent gates |
TWI739252B (zh) * | 2019-12-25 | 2021-09-11 | 杰力科技股份有限公司 | 溝槽式mosfet元件及其製造方法 |
JP7249269B2 (ja) * | 2019-12-27 | 2023-03-30 | 株式会社東芝 | 半導体装置およびその製造方法 |
US11316042B2 (en) * | 2020-01-31 | 2022-04-26 | Power Integrations, Inc. | Process and structure for a superjunction device |
US20220085192A1 (en) * | 2020-09-16 | 2022-03-17 | Kabushiki Kaisha Toshiba | Semiconductor device |
US11569353B2 (en) | 2021-02-02 | 2023-01-31 | Micron Technology, Inc. | Apparatuses including passing word lines comprising a band offset material, and related methods and systems |
JP7447038B2 (ja) | 2021-03-09 | 2024-03-11 | 株式会社東芝 | 半導体装置 |
CN115312586B (zh) * | 2022-09-01 | 2023-10-17 | 江苏长晶科技股份有限公司 | 一种碳化硅功率器件 |
CN115241277B (zh) * | 2022-09-22 | 2023-01-10 | 深圳芯能半导体技术有限公司 | 一种隔离型沟槽mos器件及其制备方法 |
CN115775823B (zh) * | 2022-11-29 | 2023-07-21 | 上海功成半导体科技有限公司 | 屏蔽栅功率器件及其制备方法 |
CN116313809B (zh) * | 2023-03-14 | 2024-02-23 | 深圳市至信微电子有限公司 | 沟槽型mos场效应晶体管的制备方法和应用 |
CN117374125A (zh) * | 2023-12-06 | 2024-01-09 | 无锡锡产微芯半导体有限公司 | 一种沟槽mosfet器件及其制备工艺 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02156552A (ja) * | 1988-12-08 | 1990-06-15 | Nec Corp | 半導体装置およびその製造方法 |
JP2003523087A (ja) * | 2000-02-12 | 2003-07-29 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 増加する逆阻止電圧のための分圧器を伴う半導体装置 |
WO2003065459A1 (fr) * | 2002-01-28 | 2003-08-07 | Mitsubishi Denki Kabushiki Kaisha | Dispositif a semi-conducteur |
JP2003282892A (ja) * | 2002-03-08 | 2003-10-03 | Internatl Business Mach Corp <Ibm> | 低容量esd耐性ダイオードの方法および構造 |
JP2004047599A (ja) * | 2002-07-10 | 2004-02-12 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2004146689A (ja) * | 2002-10-25 | 2004-05-20 | Fuji Electric Device Technology Co Ltd | 超接合半導体素子 |
JP2005064429A (ja) * | 2003-08-20 | 2005-03-10 | Fuji Electric Device Technology Co Ltd | 半導体装置およびその製造方法 |
Family Cites Families (66)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US203576A (en) * | 1878-05-14 | Improvement in book-clamps | ||
US41407A (en) * | 1864-01-26 | Improvement in plows | ||
US6021A (en) * | 1849-01-09 | Cast-iron cab-wheel | ||
US60916A (en) * | 1867-01-01 | Theophiltjs f | ||
GB2028582A (en) | 1978-08-17 | 1980-03-05 | Plessey Co Ltd | Field effect structure |
US4978631A (en) | 1986-07-25 | 1990-12-18 | Siliconix Incorporated | Current source with a process selectable temperature coefficient |
US5243212A (en) * | 1987-12-22 | 1993-09-07 | Siliconix Incorporated | Transistor with a charge induced drain extension |
JPH01185936A (ja) * | 1988-01-21 | 1989-07-25 | Fujitsu Ltd | 半導体装置 |
US5282018A (en) | 1991-01-09 | 1994-01-25 | Kabushiki Kaisha Toshiba | Power semiconductor device having gate structure in trench |
CN1019720B (zh) | 1991-03-19 | 1992-12-30 | 电子科技大学 | 半导体功率器件 |
DE4333661C1 (de) * | 1993-10-01 | 1995-02-16 | Daimler Benz Ag | Halbleiterbauelement mit hoher Durchbruchsspannung |
JP3307785B2 (ja) | 1994-12-13 | 2002-07-24 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
US6078090A (en) | 1997-04-02 | 2000-06-20 | Siliconix Incorporated | Trench-gated Schottky diode with integral clamping diode |
US5637898A (en) | 1995-12-22 | 1997-06-10 | North Carolina State University | Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance |
DE59707158D1 (de) | 1996-02-05 | 2002-06-06 | Infineon Technologies Ag | Durch feldeffekt steuerbares halbleiterbauelement |
JPH09283754A (ja) * | 1996-04-16 | 1997-10-31 | Toshiba Corp | 高耐圧半導体装置 |
JPH10256550A (ja) | 1997-01-09 | 1998-09-25 | Toshiba Corp | 半導体装置 |
JP3938964B2 (ja) * | 1997-02-10 | 2007-06-27 | 三菱電機株式会社 | 高耐圧半導体装置およびその製造方法 |
JP3191747B2 (ja) * | 1997-11-13 | 2001-07-23 | 富士電機株式会社 | Mos型半導体素子 |
WO1999030363A2 (en) | 1997-12-10 | 1999-06-17 | Koninklijke Philips Electronics N.V. | Semiconductor device and method of manufacturing such a device |
US6069372A (en) * | 1998-01-22 | 2000-05-30 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate type semiconductor device with potential detection gate for overvoltage protection |
KR100295063B1 (ko) | 1998-06-30 | 2001-08-07 | 김덕중 | 트렌치게이트구조의전력반도체장치및그제조방법 |
GB9815021D0 (en) * | 1998-07-11 | 1998-09-09 | Koninkl Philips Electronics Nv | Semiconductor power device manufacture |
US5998833A (en) | 1998-10-26 | 1999-12-07 | North Carolina State University | Power semiconductor devices having improved high frequency switching and breakdown characteristics |
US6351018B1 (en) * | 1999-02-26 | 2002-02-26 | Fairchild Semiconductor Corporation | Monolithically integrated trench MOSFET and Schottky diode |
US6191447B1 (en) | 1999-05-28 | 2001-02-20 | Micro-Ohm Corporation | Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same |
JP3971062B2 (ja) * | 1999-07-29 | 2007-09-05 | 株式会社東芝 | 高耐圧半導体装置 |
JP4765012B2 (ja) | 2000-02-09 | 2011-09-07 | 富士電機株式会社 | 半導体装置及びその製造方法 |
JP4363736B2 (ja) * | 2000-03-01 | 2009-11-11 | 新電元工業株式会社 | トランジスタ及びその製造方法 |
GB0006957D0 (en) * | 2000-03-23 | 2000-05-10 | Koninkl Philips Electronics Nv | A semiconductor device |
US6541820B1 (en) | 2000-03-28 | 2003-04-01 | International Rectifier Corporation | Low voltage planar power MOSFET with serpentine gate pattern |
JP2003533889A (ja) | 2000-05-13 | 2003-11-11 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | トレンチゲート半導体装置 |
US6391699B1 (en) * | 2000-06-05 | 2002-05-21 | Fairchild Semiconductor Corporation | Method of manufacturing a trench MOSFET using selective growth epitaxy |
US6445035B1 (en) * | 2000-07-24 | 2002-09-03 | Fairchild Semiconductor Corporation | Power MOS device with buried gate and groove |
US6696726B1 (en) * | 2000-08-16 | 2004-02-24 | Fairchild Semiconductor Corporation | Vertical MOSFET with ultra-low resistance and low gate charge |
JP4764987B2 (ja) * | 2000-09-05 | 2011-09-07 | 富士電機株式会社 | 超接合半導体素子 |
US6509233B2 (en) * | 2000-10-13 | 2003-01-21 | Siliconix Incorporated | Method of making trench-gated MOSFET having cesium gate oxide layer |
AU2002230482A1 (en) * | 2000-11-16 | 2002-05-27 | Silicon Wireless Corporation | Discrete and packaged power devices for radio frequency (rf) applications and methods of forming same |
US6608350B2 (en) | 2000-12-07 | 2003-08-19 | International Rectifier Corporation | High voltage vertical conduction superjunction semiconductor device |
US6677641B2 (en) * | 2001-10-17 | 2004-01-13 | Fairchild Semiconductor Corporation | Semiconductor structure with improved smaller forward voltage loss and higher blocking capability |
US7345342B2 (en) * | 2001-01-30 | 2008-03-18 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
US6710403B2 (en) | 2002-07-30 | 2004-03-23 | Fairchild Semiconductor Corporation | Dual trench power MOSFET |
EP1396030B1 (en) * | 2001-04-11 | 2011-06-29 | Silicon Semiconductor Corporation | Vertical power semiconductor device and method of making the same |
US20020179968A1 (en) * | 2001-05-30 | 2002-12-05 | Frank Pfirsch | Power semiconductor component, compensation component, power transistor, and method for producing power semiconductor components |
US6555873B2 (en) * | 2001-09-07 | 2003-04-29 | Power Integrations, Inc. | High-voltage lateral transistor with a multi-layered extended drain structure |
DE10144268B4 (de) * | 2001-09-08 | 2015-03-05 | Robert Bosch Gmbh | Vorrichtung zur Messung der Stärke einer Vektorkomponente eines Magnetfeldes |
CN1181559C (zh) | 2001-11-21 | 2004-12-22 | 同济大学 | 一种半导体器件 |
US6686244B2 (en) | 2002-03-21 | 2004-02-03 | General Semiconductor, Inc. | Power semiconductor device having a voltage sustaining region that includes doped columns formed with a single ion implantation step |
US6812525B2 (en) | 2002-06-25 | 2004-11-02 | International Rectifier Corporation | Trench fill process |
DE10313712B4 (de) * | 2003-03-27 | 2008-04-03 | Infineon Technologies Ag | Laterales mittels Feldeffekt steuerbares Halbleiterbauelement für HF-Anwendungen |
US7652326B2 (en) * | 2003-05-20 | 2010-01-26 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
JP4194890B2 (ja) * | 2003-06-24 | 2008-12-10 | 株式会社豊田中央研究所 | 半導体装置とその製造方法 |
DE10334780B3 (de) * | 2003-07-30 | 2005-04-21 | Infineon Technologies Ag | Halbleiteranordnung mit einer MOSFET-Struktur und einer Zenereinrichtung sowie Verfahren zur Herstellung derselben |
DE10339488B3 (de) * | 2003-08-27 | 2005-04-14 | Infineon Technologies Ag | Laterales Halbleiterbauelement mit einer wenigstens eine Feldelektrode aufweisenden Driftzone |
EP1536463A1 (en) * | 2003-11-28 | 2005-06-01 | STMicroelectronics S.r.l. | Method for manufacturing a power device with insulated trench-gate having controlled channel length and corresponding device |
EP1721344A4 (en) * | 2003-12-19 | 2009-06-10 | Third Dimension 3D Sc Inc | METHOD FOR MANUFACTURING A SUPERJUNCTION DEVICE |
US7368777B2 (en) * | 2003-12-30 | 2008-05-06 | Fairchild Semiconductor Corporation | Accumulation device with charge balance structure and method of forming the same |
US7535056B2 (en) | 2004-03-11 | 2009-05-19 | Yokogawa Electric Corporation | Semiconductor device having a low concentration layer formed outside a drift layer |
US20050199918A1 (en) * | 2004-03-15 | 2005-09-15 | Daniel Calafut | Optimized trench power MOSFET with integrated schottky diode |
US7465986B2 (en) | 2004-08-27 | 2008-12-16 | International Rectifier Corporation | Power semiconductor device including insulated source electrodes inside trenches |
US7355238B2 (en) | 2004-12-06 | 2008-04-08 | Asahi Glass Company, Limited | Nonvolatile semiconductor memory device having nanoparticles for charge retention |
CN101882583A (zh) | 2005-04-06 | 2010-11-10 | 飞兆半导体公司 | 沟栅场效应晶体管及其形成方法 |
DE102006055131A1 (de) | 2005-11-28 | 2007-06-06 | Fuji Electric Holdings Co., Ltd., Kawasaki | Halbleiterbauteil und Verfahren zu seiner Herstellung |
US7473976B2 (en) * | 2006-02-16 | 2009-01-06 | Fairchild Semiconductor Corporation | Lateral power transistor with self-biasing electrodes |
US7535621B2 (en) * | 2006-12-27 | 2009-05-19 | Qualcomm Mems Technologies, Inc. | Aluminum fluoride films for microelectromechanical system applications |
US8659074B2 (en) * | 2007-01-09 | 2014-02-25 | Maxpower Semiconductor, Inc. | Semiconductor device |
-
2008
- 2008-01-08 US US11/971,123 patent/US8659074B2/en active Active
- 2008-01-08 US US11/971,096 patent/US8058682B2/en active Active
- 2008-01-08 JP JP2009545640A patent/JP5666135B2/ja not_active Expired - Fee Related
- 2008-01-08 KR KR1020097014375A patent/KR101452949B1/ko active IP Right Grant
- 2008-01-08 CN CN2008800019458A patent/CN101689562B/zh active Active
- 2008-01-08 KR KR1020097014376A patent/KR20090116702A/ko not_active Application Discontinuation
- 2008-01-08 JP JP2009545646A patent/JP5479915B2/ja active Active
- 2008-01-08 US US11/971,139 patent/US7964913B2/en active Active
- 2008-01-08 CN CN2008800019246A patent/CN101641763B/zh active Active
- 2008-01-08 US US11/971,152 patent/US8344451B2/en active Active
- 2008-01-08 US US11/971,169 patent/US8420483B2/en active Active
- 2008-01-08 WO PCT/US2008/050505 patent/WO2008086348A2/en active Application Filing
- 2008-01-08 WO PCT/US2008/050532 patent/WO2008086366A2/en active Application Filing
- 2008-01-08 EP EP08727446A patent/EP2109892A4/en not_active Withdrawn
- 2008-01-08 EP EP08713649A patent/EP2109879A4/en not_active Withdrawn
-
2011
- 2011-06-09 US US13/156,848 patent/US8546878B2/en active Active
-
2012
- 2012-11-26 US US13/684,610 patent/US8629493B2/en active Active
-
2013
- 2013-03-13 US US13/798,674 patent/US8618599B2/en active Active
- 2013-09-16 US US14/028,017 patent/US8907412B2/en active Active
- 2013-12-05 US US14/098,083 patent/US20140183625A1/en not_active Abandoned
- 2013-12-17 US US14/108,746 patent/US8962426B2/en active Active
-
2014
- 2014-01-27 US US14/164,853 patent/US9590075B2/en active Active
- 2014-12-10 JP JP2014249929A patent/JP2015092593A/ja active Pending
-
2015
- 2015-01-22 US US14/603,147 patent/US20150270375A1/en not_active Abandoned
-
2017
- 2017-01-24 US US15/414,454 patent/US20190051743A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02156552A (ja) * | 1988-12-08 | 1990-06-15 | Nec Corp | 半導体装置およびその製造方法 |
JP2003523087A (ja) * | 2000-02-12 | 2003-07-29 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 増加する逆阻止電圧のための分圧器を伴う半導体装置 |
WO2003065459A1 (fr) * | 2002-01-28 | 2003-08-07 | Mitsubishi Denki Kabushiki Kaisha | Dispositif a semi-conducteur |
JP2003282892A (ja) * | 2002-03-08 | 2003-10-03 | Internatl Business Mach Corp <Ibm> | 低容量esd耐性ダイオードの方法および構造 |
JP2004047599A (ja) * | 2002-07-10 | 2004-02-12 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2004146689A (ja) * | 2002-10-25 | 2004-05-20 | Fuji Electric Device Technology Co Ltd | 超接合半導体素子 |
JP2005064429A (ja) * | 2003-08-20 | 2005-03-10 | Fuji Electric Device Technology Co Ltd | 半導体装置およびその製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015195366A (ja) * | 2014-03-17 | 2015-11-05 | 株式会社東芝 | 半導体装置 |
US10141455B2 (en) | 2014-03-17 | 2018-11-27 | Kabushiki Kaisha Toshiba | Semiconductor device |
JP2019016804A (ja) * | 2014-03-17 | 2019-01-31 | 株式会社東芝 | 半導体装置 |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5479915B2 (ja) | 半導体装置 | |
KR101279574B1 (ko) | 고전압 반도체 소자 및 그 제조 방법 | |
US20180175187A1 (en) | Semiconductor Device Comprising a Plurality of Transistor Cells and Manufacturing Method | |
US6750508B2 (en) | Power semiconductor switching element provided with buried electrode | |
US7023069B2 (en) | Method for forming thick dielectric regions using etched trenches | |
JP2016189480A (ja) | 負べベルにより終端された高阻止電圧を有するSiCデバイス | |
US8513730B2 (en) | Semiconductor component with vertical structures having a high aspect ratio and method | |
TWI585979B (zh) | 半導體裝置中之簡易電平衡 | |
WO2021075330A1 (ja) | 半導体装置および半導体装置の製造方法 | |
US8530300B2 (en) | Semiconductor device with drift regions and compensation regions | |
US8963239B2 (en) | 800 V superjunction device | |
US11322596B2 (en) | Semiconductor device including junction material in a trench and manufacturing method | |
CN108470772B (zh) | 一种soi半导体器件及其形成方法 | |
JP2017017145A (ja) | 半導体装置 | |
US10651271B2 (en) | Charge compensation semiconductor devices | |
KR101361067B1 (ko) | 수퍼 정션 금속 산화물 반도체 전계 효과 트랜지스터의 제조 방법 | |
CN116457945A (zh) | 垂直半导体结构元件以及用于制造其的方法 | |
CN112768522A (zh) | 超结器件及其制造方法 | |
KR20070035475A (ko) | 에칭된 트렌치들을 이용하여 두꺼운 유전체 영역들을형성하는 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101220 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20101220 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130319 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130618 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130625 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130718 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130725 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130819 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130826 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130919 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140107 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140206 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140217 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140213 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5479915 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |