AU2002230482A1 - Discrete and packaged power devices for radio frequency (rf) applications and methods of forming same - Google Patents

Discrete and packaged power devices for radio frequency (rf) applications and methods of forming same

Info

Publication number
AU2002230482A1
AU2002230482A1 AU2002230482A AU3048202A AU2002230482A1 AU 2002230482 A1 AU2002230482 A1 AU 2002230482A1 AU 2002230482 A AU2002230482 A AU 2002230482A AU 3048202 A AU3048202 A AU 3048202A AU 2002230482 A1 AU2002230482 A1 AU 2002230482A1
Authority
AU
Australia
Prior art keywords
discrete
applications
methods
radio frequency
power devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002230482A
Inventor
Bantval Jayant Baliga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silicon Wireless Corp
Original Assignee
Silicon Wireless Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22942122&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=AU2002230482(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Silicon Wireless Corp filed Critical Silicon Wireless Corp
Publication of AU2002230482A1 publication Critical patent/AU2002230482A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/41—Structure, shape, material or disposition of the strap connectors after the connecting process of a plurality of strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6605—High-frequency electrical connections
    • H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/06181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4009—Loop shape
    • H01L2224/40095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73255—Bump and strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73257—Bump and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13063—Metal-Semiconductor Field-Effect Transistor [MESFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1903—Structure including wave guides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
AU2002230482A 2000-11-16 2001-11-05 Discrete and packaged power devices for radio frequency (rf) applications and methods of forming same Abandoned AU2002230482A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US24911600P 2000-11-16 2000-11-16
US60/249,116 2000-11-16
PCT/US2001/044168 WO2002041402A2 (en) 2000-11-16 2001-11-05 Discrete and packaged power devices for radio frequency (rf) applications and methods of forming same

Publications (1)

Publication Number Publication Date
AU2002230482A1 true AU2002230482A1 (en) 2002-05-27

Family

ID=22942122

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002230482A Abandoned AU2002230482A1 (en) 2000-11-16 2001-11-05 Discrete and packaged power devices for radio frequency (rf) applications and methods of forming same

Country Status (3)

Country Link
US (5) US6653691B2 (en)
AU (1) AU2002230482A1 (en)
WO (1) WO2002041402A2 (en)

Families Citing this family (183)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4528460B2 (en) * 2000-06-30 2010-08-18 株式会社東芝 Semiconductor element
US6653691B2 (en) * 2000-11-16 2003-11-25 Silicon Semiconductor Corporation Radio frequency (RF) power devices having faraday shield layers therein
US6768171B2 (en) 2000-11-27 2004-07-27 Power Integrations, Inc. High-voltage transistor with JFET conduction channels
US6818513B2 (en) * 2001-01-30 2004-11-16 Fairchild Semiconductor Corporation Method of forming a field effect transistor having a lateral depletion structure
CN1520616A (en) * 2001-04-11 2004-08-11 ��˹�������뵼�幫˾ Power semiconductor devices having laterally extending base shielding regions that inhibit base reach through and methodds of forming same
US6853033B2 (en) * 2001-06-05 2005-02-08 National University Of Singapore Power MOSFET having enhanced breakdown voltage
US7221011B2 (en) * 2001-09-07 2007-05-22 Power Integrations, Inc. High-voltage vertical transistor with a multi-gradient drain doping profile
US6573558B2 (en) * 2001-09-07 2003-06-03 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US6635544B2 (en) * 2001-09-07 2003-10-21 Power Intergrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US6555873B2 (en) 2001-09-07 2003-04-29 Power Integrations, Inc. High-voltage lateral transistor with a multi-layered extended drain structure
US7786533B2 (en) * 2001-09-07 2010-08-31 Power Integrations, Inc. High-voltage vertical transistor with edge termination structure
ATE311017T1 (en) * 2001-09-28 2005-12-15 Siemens Ag ARRANGEMENT WITH POWER SEMICONDUCTOR COMPONENTS FOR POWER CONTROL OF HIGH CURRENTS AND APPLICATION OF THE ARRANGEMENT
US6555883B1 (en) 2001-10-29 2003-04-29 Power Integrations, Inc. Lateral power MOSFET for high switching speeds
US6849518B2 (en) * 2002-05-07 2005-02-01 Intel Corporation Dual trench isolation using single critical lithographic patterning
US6750524B2 (en) * 2002-05-14 2004-06-15 Motorola Freescale Semiconductor Trench MOS RESURF super-junction devices
JP3637330B2 (en) * 2002-05-16 2005-04-13 株式会社東芝 Semiconductor device
US7060545B1 (en) * 2002-10-31 2006-06-13 Micrel, Inc. Method of making truncated power enhanced drift lateral DMOS device with ground strap
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US6865093B2 (en) * 2003-05-27 2005-03-08 Power Integrations, Inc. Electronic circuit control element with tap element
US6818939B1 (en) * 2003-07-18 2004-11-16 Semiconductor Components Industries, L.L.C. Vertical compound semiconductor field effect transistor structure
US20060192249A1 (en) * 2004-09-20 2006-08-31 Samsung Electronics Co., Ltd. Field effect transistors with vertically oriented gate electrodes and methods for fabricating the same
KR100543901B1 (en) * 2003-09-19 2006-01-20 삼성전자주식회사 Semiconductor device and method for fabricating the same
DE10350751B4 (en) * 2003-10-30 2008-04-24 Infineon Technologies Ag Method for producing a vertical field effect transistor and field effect memory transistor, in particular FLASH memory transistor
US7317216B2 (en) * 2003-10-31 2008-01-08 University Of Hawaii Ultrasensitive biochemical sensing platform
US7279743B2 (en) 2003-12-02 2007-10-09 Vishay-Siliconix Closed cell trench metal-oxide-semiconductor field effect transistor
KR100786488B1 (en) * 2004-01-10 2007-12-18 에이치브이브이아이 세미콘덕터즈, 인크. Power semiconductor device
GB0404748D0 (en) * 2004-03-03 2004-04-07 Koninkl Philips Electronics Nv Trench field effect transistor and method of making it
US7183610B2 (en) * 2004-04-30 2007-02-27 Siliconix Incorporated Super trench MOSFET including buried source electrode and method of fabricating the same
US6906380B1 (en) 2004-05-13 2005-06-14 Vishay-Siliconix Drain side gate trench metal-oxide-semiconductor field effect transistor
US8183629B2 (en) * 2004-05-13 2012-05-22 Vishay-Siliconix Stacked trench metal-oxide-semiconductor field effect transistor device
DE102004026233B4 (en) * 2004-05-28 2015-02-12 Infineon Technologies Ag trench transistor
US20050269630A1 (en) * 2004-06-04 2005-12-08 Jianjun Cao Trench type semiconductor device with reduced Qgd
KR100620442B1 (en) * 2004-06-08 2006-09-08 삼성전자주식회사 Method For Manufacturing Of Semiconductor Device
WO2005124873A1 (en) * 2004-06-14 2005-12-29 Koninklijke Philips Electronics, N.V. High-voltage device structure
DE112005001434B4 (en) 2004-06-25 2018-06-07 International Rectifier Corporation MOS gate-connected power semiconductor device with source field electrode
US7002398B2 (en) 2004-07-08 2006-02-21 Power Integrations, Inc. Method and apparatus for controlling a circuit with a high voltage sense device
US7485932B2 (en) * 2004-07-20 2009-02-03 International Rectifier Corporation ACCUFET with Schottky source contact
DE102004037153B4 (en) * 2004-07-30 2011-09-15 Infineon Technologies Ag Method for producing a power semiconductor device
US7465986B2 (en) * 2004-08-27 2008-12-16 International Rectifier Corporation Power semiconductor device including insulated source electrodes inside trenches
US20060049464A1 (en) 2004-09-03 2006-03-09 Rao G R Mohan Semiconductor devices with graded dopant regions
US7192814B2 (en) * 2004-09-16 2007-03-20 Semiconductor Components Industries, L.L.C. Method of forming a low capacitance semiconductor device and structure therefor
US7473966B1 (en) * 2004-11-09 2009-01-06 Blanchard Richard A Oxide-bypassed lateral high voltage structures and methods
US20060103023A1 (en) * 2004-11-12 2006-05-18 International Business Machines Corporation Methods for incorporating high k dielectric materials for enhanced SRAM operation and structures produced thereby
US7687402B2 (en) * 2004-11-15 2010-03-30 Micron Technology, Inc. Methods of making optoelectronic devices, and methods of making solar cells
US8530963B2 (en) 2005-01-06 2013-09-10 Estivation Properties Llc Power semiconductor device and method therefor
US7335534B2 (en) * 2005-01-10 2008-02-26 Hvvi, Semiconductors, Inc. Semiconductor component and method of manufacture
JP2006295134A (en) * 2005-03-17 2006-10-26 Sanyo Electric Co Ltd Semiconductor device and method for manufacture
DE102005019157A1 (en) * 2005-04-25 2006-10-26 Robert Bosch Gmbh Metal oxide semiconductor field effect transistor arrangement for use in integrated circuit, has source and gate connections of transistors that are connected with each other and that contact connections of chip, respectively
US20060255401A1 (en) * 2005-05-11 2006-11-16 Yang Robert K Increasing breakdown voltage in semiconductor devices with vertical series capacitive structures
US20070012983A1 (en) * 2005-07-15 2007-01-18 Yang Robert K Terminations for semiconductor devices with floating vertical series capacitive structures
US7635637B2 (en) * 2005-07-25 2009-12-22 Fairchild Semiconductor Corporation Semiconductor structures formed on substrates and methods of manufacturing the same
DE102005039165B4 (en) * 2005-08-17 2010-12-02 Infineon Technologies Ag Wire and strip bonded semiconductor power device and method of making the same
JP5050329B2 (en) * 2005-08-26 2012-10-17 サンケン電気株式会社 Trench structure semiconductor device and manufacturing method thereof
US7768064B2 (en) * 2006-01-05 2010-08-03 Fairchild Semiconductor Corporation Structure and method for improving shielded gate field effect transistors
US8692322B2 (en) * 2006-02-17 2014-04-08 Alpha And Omega Semiconductor Incorporated Flexible Crss adjustment in a SGT MOSFET to smooth waveforms and to avoid EMI in DC-DC application
US7768075B2 (en) * 2006-04-06 2010-08-03 Fairchild Semiconductor Corporation Semiconductor die packages using thin dies and metal substrates
US8471390B2 (en) 2006-05-12 2013-06-25 Vishay-Siliconix Power MOSFET contact metallization
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
US7605451B2 (en) * 2006-06-27 2009-10-20 Hvvi Semiconductors, Inc RF power transistor having an encapsulated chip package
US20080017998A1 (en) * 2006-07-19 2008-01-24 Pavio Jeanne S Semiconductor component and method of manufacture
US7382030B1 (en) 2006-07-25 2008-06-03 Rf Micro Devices, Inc. Integrated metal shield for a field effect transistor
US7656003B2 (en) * 2006-08-25 2010-02-02 Hvvi Semiconductors, Inc Electrical stress protection apparatus and method of manufacture
WO2008039459A1 (en) * 2006-09-27 2008-04-03 Maxpower Semiconductor, Inc. Power mosfet with recessed field plate
US7589377B2 (en) * 2006-10-06 2009-09-15 The Boeing Company Gate structure with low resistance for high power semiconductor devices
DE102006049043B4 (en) * 2006-10-18 2011-03-17 Infineon Technologies Austria Ag Field effect controllable semiconductor device and method for its manufacture
US7888746B2 (en) * 2006-12-15 2011-02-15 Hvvi Semiconductors, Inc. Semiconductor structure and method of manufacture
US8659074B2 (en) * 2007-01-09 2014-02-25 Maxpower Semiconductor, Inc. Semiconductor device
US8564057B1 (en) 2007-01-09 2013-10-22 Maxpower Semiconductor, Inc. Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield
US8884367B2 (en) 2007-02-08 2014-11-11 International Rectifier Corporation MOSgated power semiconductor device with source field electrode
US7468536B2 (en) 2007-02-16 2008-12-23 Power Integrations, Inc. Gate metal routing for transistor with checkerboarded layout
US7595523B2 (en) * 2007-02-16 2009-09-29 Power Integrations, Inc. Gate pullback at ends of high-voltage vertical transistor structure
US7859037B2 (en) * 2007-02-16 2010-12-28 Power Integrations, Inc. Checkerboarded high-voltage vertical transistor layout
US8653583B2 (en) * 2007-02-16 2014-02-18 Power Integrations, Inc. Sensing FET integrated with a high-voltage transistor
US7557406B2 (en) * 2007-02-16 2009-07-07 Power Integrations, Inc. Segmented pillar layout for a high-voltage vertical transistor
US8368126B2 (en) 2007-04-19 2013-02-05 Vishay-Siliconix Trench metal oxide semiconductor with recessed trench material and remote contacts
KR100825815B1 (en) * 2007-06-07 2008-04-28 삼성전자주식회사 Semiconductor device including active pattern with channel recess, and method of fabricating the same
US8067834B2 (en) * 2007-08-21 2011-11-29 Hvvi Semiconductors, Inc. Semiconductor component
CN101388407B (en) * 2007-09-12 2011-12-14 万国半导体股份有限公司 Field effect transistor construction adopting heavy doped conduction substrate, inverse groove and earthed source pole
US7651889B2 (en) 2007-09-13 2010-01-26 Freescale Semiconductor, Inc. Electromagnetic shield formation for integrated circuit die package
US9059083B2 (en) * 2007-09-14 2015-06-16 Infineon Technologies Ag Semiconductor device
WO2009039441A1 (en) 2007-09-21 2009-03-26 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
JP2009088005A (en) * 2007-09-27 2009-04-23 Sanyo Electric Co Ltd Semiconductor device and method of manufacturing the same
KR100953333B1 (en) * 2007-11-05 2010-04-20 주식회사 동부하이텍 Semiconductor device having vertical and horizontal type gates and method for fabricating the same
US7989882B2 (en) 2007-12-07 2011-08-02 Cree, Inc. Transistor with A-face conductive channel and trench protecting well region
CN102318045B (en) * 2008-02-14 2014-08-06 马克斯半导体股份有限公司 Edge termination with improved breakdown voltage
JP2011512677A (en) 2008-02-14 2011-04-21 マックスパワー・セミコンダクター・インコーポレイテッド Semiconductor device structure and related processes
US20090236670A1 (en) * 2008-03-21 2009-09-24 Himax Analogic, Inc. Semiconductor Device and a Manufacturing Process Thereof
US7674678B2 (en) * 2008-05-05 2010-03-09 Infineon Technologies Austria Ag Method for producing a transistor component having a field plate
US7911021B2 (en) * 2008-06-02 2011-03-22 Maxpower Semiconductor Inc. Edge termination for semiconductor devices
US7910439B2 (en) * 2008-06-11 2011-03-22 Maxpower Semiconductor Inc. Super self-aligned trench MOSFET devices, methods, and systems
WO2009154882A2 (en) * 2008-06-20 2009-12-23 Maxpower Semiconductor Inc. Semiconductor power switches having trench gates
US7807576B2 (en) * 2008-06-20 2010-10-05 Fairchild Semiconductor Corporation Structure and method for forming a thick bottom dielectric (TBD) for trench-gate devices
US8829624B2 (en) * 2008-06-30 2014-09-09 Fairchild Semiconductor Corporation Power device with monolithically integrated RC snubber
US8310001B2 (en) 2008-07-15 2012-11-13 Maxpower Semiconductor Inc. MOSFET switch with embedded electrostatic charge
WO2010014281A1 (en) * 2008-07-30 2010-02-04 Maxpower Semiconductor Inc. Semiconductor on insulator devices containing permanent charge
WO2010014283A1 (en) * 2008-07-30 2010-02-04 Max Power Semiconductor Inc. Lateral devices containing permanent charge
US7960783B2 (en) * 2008-08-25 2011-06-14 Maxpower Semiconductor Inc. Devices containing permanent charge
US7963148B2 (en) * 2008-09-03 2011-06-21 National Formosa Univeristy Gas sensor made of field effect transistor based on ZnO nanowires
US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
US7800196B2 (en) * 2008-09-30 2010-09-21 Northrop Grumman Systems Corporation Semiconductor structure with an electric field stop layer for improved edge termination capability
US8796764B2 (en) 2008-09-30 2014-08-05 Infineon Technologies Austria Ag Semiconductor device comprising trench gate and buried source electrodes
KR100958023B1 (en) * 2008-11-04 2010-05-17 삼성모바일디스플레이주식회사 Organic Light emitting Display device
WO2010065428A2 (en) * 2008-12-01 2010-06-10 Maxpower Semiconductor Inc. Mos-gated power devices, methods, and integrated circuits
US7989293B2 (en) * 2009-02-24 2011-08-02 Maxpower Semiconductor, Inc. Trench device structure and fabrication
US8319278B1 (en) 2009-03-31 2012-11-27 Maxpower Semiconductor, Inc. Power device structures and methods using empty space zones
US8847307B2 (en) 2010-04-13 2014-09-30 Maxpower Semiconductor, Inc. Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges
WO2010120704A2 (en) * 2009-04-13 2010-10-21 Maxpower Semiconductor Inc. Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges
US8164159B1 (en) 2009-07-18 2012-04-24 Intergrated Device Technologies, inc. Semiconductor resonators with electromagnetic and environmental shielding and methods of forming same
US7952141B2 (en) 2009-07-24 2011-05-31 Fairchild Semiconductor Corporation Shield contacts in a shielded gate MOSFET
US9425305B2 (en) 2009-10-20 2016-08-23 Vishay-Siliconix Structures of and methods of fabricating split gate MIS devices
US9419129B2 (en) 2009-10-21 2016-08-16 Vishay-Siliconix Split gate semiconductor device with curved gate oxide profile
US9306056B2 (en) 2009-10-30 2016-04-05 Vishay-Siliconix Semiconductor device with trench-like feed-throughs
US8604525B2 (en) 2009-11-02 2013-12-10 Vishay-Siliconix Transistor structure with feed-through source-to-substrate contact
WO2011109559A2 (en) 2010-03-02 2011-09-09 Kyle Terrill Structures and methods of fabricating dual gate devices
US8390060B2 (en) * 2010-07-06 2013-03-05 Maxpower Semiconductor, Inc. Power semiconductor devices, structures, and related methods
JP5654818B2 (en) * 2010-09-27 2015-01-14 ルネサスエレクトロニクス株式会社 Method for manufacturing power semiconductor device
JP2012204563A (en) * 2011-03-25 2012-10-22 Toshiba Corp Semiconductor element and semiconductor element manufacturing method
JP5738653B2 (en) * 2011-03-31 2015-06-24 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー Insulated gate semiconductor device
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8673700B2 (en) 2011-04-27 2014-03-18 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8772868B2 (en) 2011-04-27 2014-07-08 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
CN107482054B (en) 2011-05-18 2021-07-20 威世硅尼克斯公司 Semiconductor device with a plurality of transistors
US8698229B2 (en) * 2011-05-31 2014-04-15 Infineon Technologies Austria Ag Transistor with controllable compensation regions
US8803205B2 (en) * 2011-05-31 2014-08-12 Infineon Technologies Austria Ag Transistor with controllable compensation regions
CN102244101A (en) * 2011-06-28 2011-11-16 上海宏力半导体制造有限公司 Trench field effect transistor
US9443972B2 (en) * 2011-11-30 2016-09-13 Infineon Technologies Austria Ag Semiconductor device with field electrode
US8541302B2 (en) 2011-12-15 2013-09-24 Semiconductor Components Industries, Llc Electronic device including a trench with a facet and a conductive structure therein and a process of forming the same
US8647970B2 (en) 2011-12-15 2014-02-11 Semiconductor Components Industries, Llc Electronic device comprising conductive structures and an insulating layer between the conductive structures and within a trench
US8679919B2 (en) 2011-12-15 2014-03-25 Semiconductor Components Industries, Llc Electronic device comprising a conductive structure and an insulating layer within a trench and a process of forming the same
US8592279B2 (en) 2011-12-15 2013-11-26 Semicondcutor Components Industries, LLC Electronic device including a tapered trench and a conductive structure therein and a process of forming the same
JP2013131512A (en) * 2011-12-20 2013-07-04 Sumitomo Electric Ind Ltd Semiconductor device and method of manufacturing the same
CN102543891B (en) * 2012-01-05 2014-09-03 复旦大学 Preparation method of grid-controlled diode semiconductor memory device
US8664717B2 (en) 2012-01-09 2014-03-04 Globalfoundries Inc. Semiconductor device with an oversized local contact as a Faraday shield
JP2013145770A (en) 2012-01-13 2013-07-25 Sumitomo Electric Ind Ltd Semiconductor device and manufacturing method of the same
US9337356B2 (en) * 2012-01-20 2016-05-10 Skyworks Solutions, Inc. Devices and methods related to electrostatic discharge protection benign to radio-frequency operation
US8697560B2 (en) 2012-02-24 2014-04-15 Semiconductor Components Industries, Llc Process of forming an electronic device including a trench and a conductive structure therein
US9070585B2 (en) 2012-02-24 2015-06-30 Semiconductor Components Industries, Llc Electronic device including a trench and a conductive structure therein and a process of forming the same
US9299819B2 (en) * 2012-03-28 2016-03-29 Infineon Technologies Americas Corp. Deep gate trench IGBT
US8994078B2 (en) * 2012-06-29 2015-03-31 Infineon Technologies Austria Ag Semiconductor device
US8823081B2 (en) * 2012-09-21 2014-09-02 Infineon Technologies Austria Ag Transistor device with field electrode
US9064868B2 (en) 2012-10-12 2015-06-23 Globalfoundries Inc. Advanced faraday shield for a semiconductor device
JP5840598B2 (en) 2012-12-17 2016-01-06 株式会社ジャパンディスプレイ Display device with touch detection function, electronic device, and manufacturing method of display device with touch detection function
US9520390B2 (en) 2013-03-15 2016-12-13 Semiconductor Components Industries, Llc Electronic device including a capacitor structure and a process of forming the same
JP5902116B2 (en) 2013-03-25 2016-04-13 株式会社東芝 Semiconductor device
US9224854B2 (en) 2013-10-03 2015-12-29 Texas Instruments Incorporated Trench gate trench field plate vertical MOSFET
US9136368B2 (en) * 2013-10-03 2015-09-15 Texas Instruments Incorporated Trench gate trench field plate semi-vertical semi-lateral MOSFET
CN103794607B (en) * 2013-10-15 2017-02-01 深圳市明微电子股份有限公司 Capacitor and power integrated circuit
US20150118810A1 (en) * 2013-10-24 2015-04-30 Madhur Bobde Buried field ring field effect transistor (buf-fet) integrated with cells implanted with hole supply path
US10211304B2 (en) * 2013-12-04 2019-02-19 General Electric Company Semiconductor device having gate trench in JFET region
US9543396B2 (en) 2013-12-13 2017-01-10 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped regions
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates
DE102013226537B4 (en) 2013-12-18 2022-12-29 TRUMPF Hüttinger GmbH + Co. KG Power supply system with multiple amplifier paths and method for exciting a plasma
DE102013226511B4 (en) 2013-12-18 2016-12-15 TRUMPF Hüttinger GmbH + Co. KG Power supply system and method for generating a power
JP2015176900A (en) * 2014-03-13 2015-10-05 株式会社東芝 semiconductor device
US9368455B2 (en) * 2014-03-28 2016-06-14 Intel Corporation Electromagnetic interference shield for semiconductor chip packages
US9231049B1 (en) * 2014-06-20 2016-01-05 Infineon Technologies Austria Ag Semiconductor switching device with different local cell geometry
US9349795B2 (en) * 2014-06-20 2016-05-24 Infineon Technologies Austria Ag Semiconductor switching device with different local threshold voltage
US9293533B2 (en) 2014-06-20 2016-03-22 Infineon Technologies Austria Ag Semiconductor switching devices with different local transconductance
US9324823B2 (en) 2014-08-15 2016-04-26 Infineon Technologies Austria Ag Semiconductor device having a tapered gate structure and method
CN107078161A (en) 2014-08-19 2017-08-18 维西埃-硅化物公司 Electronic circuit
US9425304B2 (en) 2014-08-21 2016-08-23 Vishay-Siliconix Transistor structure with improved unclamped inductive switching immunity
US9443973B2 (en) * 2014-11-26 2016-09-13 Infineon Technologies Austria Ag Semiconductor device with charge compensation region underneath gate trench
US9356089B1 (en) 2015-02-26 2016-05-31 International Business Machines Corporation Low temperature fabrication of lateral thin film varistor
US9478639B2 (en) 2015-02-27 2016-10-25 Infineon Technologies Austria Ag Electrode-aligned selective epitaxy method for vertical power devices
US10134641B2 (en) * 2015-05-21 2018-11-20 CoolStar Technology, Inc. Enhanced integration of DMOS and CMOS semiconductor devices
JP6676947B2 (en) * 2015-12-14 2020-04-08 富士電機株式会社 Semiconductor device
DE102016102422B3 (en) * 2016-02-11 2017-04-27 Infineon Technologies Austria Ag Method for processing a semiconductor device
US10403711B2 (en) * 2016-02-24 2019-09-03 General Electric Company Designing and fabricating semiconductor devices with specific terrestrial cosmic ray (TCR) ratings
CN107230631A (en) * 2016-03-23 2017-10-03 北大方正集团有限公司 The preparation method of channel-type semiconductor device
US10103258B2 (en) * 2016-12-29 2018-10-16 Texas Instruments Incorporated Laterally diffused metal oxide semiconductor with gate poly contact within source window
JP2019046991A (en) * 2017-09-04 2019-03-22 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method of the same
US10135357B1 (en) 2017-09-07 2018-11-20 Power Integrations, Inc. Threshold detection with tap
CN109728101A (en) * 2017-10-30 2019-05-07 中国科学院宁波材料技术与工程研究所 Field effect transistor, display element, image display device and preparation method thereof
GB2581149B (en) * 2019-02-05 2021-11-10 Pragmatic Printing Ltd Flexible interposer
CN110190112A (en) * 2019-05-07 2019-08-30 上海华虹宏力半导体制造有限公司 Trench-gate semiconductor device and its manufacturing method
US11217541B2 (en) 2019-05-08 2022-01-04 Vishay-Siliconix, LLC Transistors with electrically active chip seal ring and methods of manufacture
US11218144B2 (en) 2019-09-12 2022-01-04 Vishay-Siliconix, LLC Semiconductor device with multiple independent gates
EP4128344A1 (en) * 2020-04-03 2023-02-08 Wolfspeed, Inc. Rf amplifier package
JP2023520028A (en) 2020-04-03 2023-05-15 ウルフスピード インコーポレイテッド III-Nitride based high frequency transistor amplifier with source, gate and/or drain conductive vias
EP4128333A1 (en) 2020-04-03 2023-02-08 Wolfspeed, Inc. Group iii nitride-based radio frequency amplifiers having back side source, gate and/or drain terminals
US20230163134A1 (en) * 2021-11-23 2023-05-25 Globalfoundries U.S. Inc. Semiconductor structure including sectioned well region
CN115799340B (en) * 2023-01-09 2023-05-12 无锡先瞳半导体科技有限公司 Shielded gate field effect transistor

Family Cites Families (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3784884A (en) 1972-11-03 1974-01-08 Motorola Inc Low parasitic microwave package
US4161740A (en) 1977-11-07 1979-07-17 Microwave Semiconductor Corp. High frequency power transistor having reduced interconnection inductance and thermal resistance
JPS5791542A (en) 1980-11-29 1982-06-07 Toshiba Corp High frequency transistor device
DE3567771D1 (en) 1984-11-02 1989-02-23 Siemens Ag Wave resistance-adapted chip support for a microwave semiconductor
US4625270A (en) 1985-10-21 1986-11-25 At&T Bell Laboratories RFI suppression technique for switching circuits
US4890144A (en) * 1987-09-14 1989-12-26 Motorola, Inc. Integrated circuit trench cell
US4967258A (en) 1989-03-02 1990-10-30 Ball Corporation Structure for use in self-biasing and source bypassing a packaged, field-effect transistor and method for making same
US5134448A (en) 1990-01-29 1992-07-28 Motorola, Inc. MOSFET with substrate source contact
US5204281A (en) * 1990-09-04 1993-04-20 Motorola, Inc. Method of making dynamic random access memory cell having a trench capacitor
US5282018A (en) * 1991-01-09 1994-01-25 Kabushiki Kaisha Toshiba Power semiconductor device having gate structure in trench
US6002183A (en) 1995-05-04 1999-12-14 Iversen; Arthur H. Power semiconductor packaging
US5537074A (en) 1993-08-24 1996-07-16 Iversen; Arthur H. Power semiconductor packaging
USRE35807E (en) 1991-04-16 1998-05-26 Iversen Arthur H Power semiconductor packaging
US5316831A (en) * 1991-05-08 1994-05-31 Fuji Electric Co., Ltd. Metallic printed board
JP2864841B2 (en) 1992-02-04 1999-03-08 三菱電機株式会社 High frequency high power transistor
EP0660980B1 (en) 1992-09-15 2000-06-07 Analogic Corporation High power solid state r.f. amplifier
US5304948A (en) 1992-12-11 1994-04-19 Nokia Mobile Phones Ltd. RF amplifier with linear gain control
US5349325A (en) * 1993-05-18 1994-09-20 Integrated Device Technology, Inc. Multi-layer low modulation polycrystalline semiconductor resistor
US5563447A (en) 1993-09-07 1996-10-08 Delco Electronics Corp. High power semiconductor switch module
US5396085A (en) * 1993-12-28 1995-03-07 North Carolina State University Silicon carbide switching device with rectifying-gate
JPH07211899A (en) 1994-01-24 1995-08-11 Fuji Electric Co Ltd Mos type semiconductor element
US5637922A (en) 1994-02-07 1997-06-10 General Electric Company Wireless radio frequency power semiconductor devices using high density interconnect
US5477188A (en) 1994-07-14 1995-12-19 Eni Linear RF power amplifier
DE69418037T2 (en) 1994-08-02 1999-08-26 St Microelectronics Srl Power semiconductor device made of MOS technology chips and housing structure
US5583368A (en) * 1994-08-11 1996-12-10 International Business Machines Corporation Stacked devices
US5488252A (en) 1994-08-16 1996-01-30 Telefonaktiebolaget L M Erricsson Layout for radio frequency power transistors
US5532512A (en) 1994-10-03 1996-07-02 General Electric Company Direct stacked and flip chip power semiconductor device structures
US5659455A (en) 1995-03-28 1997-08-19 Herbert; Edward Packaging for electronic circuits using a capacitor as a structural member
US5717249A (en) * 1995-04-05 1998-02-10 Matsushita Electronics Corporation RF power amplifying circuit device
US5652467A (en) 1995-07-27 1997-07-29 Hitachi, Ltd. Semiconductor device and package structure therefore and power inverter having semiconductor device
US5578841A (en) 1995-12-18 1996-11-26 Motorola, Inc. Vertical MOSFET device having frontside and backside contacts
US5796170A (en) 1996-02-15 1998-08-18 Northern Telecom Limited Ball grid array (BGA) integrated circuit packages
US5686764A (en) 1996-03-20 1997-11-11 Lsi Logic Corporation Flip chip package with reduced number of package layers
DE19611045C1 (en) * 1996-03-20 1997-05-22 Siemens Ag Field effect transistor e.g. vertical MOS type
JP4077529B2 (en) * 1996-05-22 2008-04-16 フェアチャイルドコリア半導体株式会社 Manufacturing method of trench diffusion MOS transistor
US5742076A (en) * 1996-06-05 1998-04-21 North Carolina State University Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance
US5889319A (en) * 1996-07-19 1999-03-30 Ericsson, Inc. RF power package with a dual ground
US5801442A (en) 1996-07-22 1998-09-01 Northrop Grumman Corporation Microchannel cooling of high power semiconductor devices
JP3810867B2 (en) * 1996-09-03 2006-08-16 三菱電機株式会社 Microwave semiconductor integrated circuit and manufacturing method thereof
DE19638438A1 (en) * 1996-09-19 1998-04-02 Siemens Ag Vertical semiconductor device controllable by field effect
EP0838446B1 (en) * 1996-10-25 2007-08-15 Ngk Spark Plug Co., Ltd A dielectric material, a method for producing the same and a dielectric resonator device comprising same
US5929477A (en) * 1997-01-22 1999-07-27 International Business Machines Corporation Self-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell array
JPH10294401A (en) 1997-04-21 1998-11-04 Matsushita Electric Ind Co Ltd Package and semiconductor device
US6121633A (en) * 1997-06-12 2000-09-19 Cree Research, Inc. Latch-up free power MOS-bipolar transistor
US5898198A (en) 1997-08-04 1999-04-27 Spectrian RF power device having voltage controlled linearity
US5912490A (en) 1997-08-04 1999-06-15 Spectrian MOSFET having buried shield plate for reduced gate/drain capacitance
US6020636A (en) 1997-10-24 2000-02-01 Eni Technologies, Inc. Kilowatt power transistor
US5977588A (en) 1997-10-31 1999-11-02 Stmicroelectronics, Inc. Radio frequency power MOSFET device having improved performance characteristics
US6087697A (en) 1997-10-31 2000-07-11 Stmicroelectronics, Inc. Radio frequency power MOSFET device having improved performance characteristics
US5942796A (en) 1997-11-17 1999-08-24 Advanced Packaging Concepts, Inc. Package structure for high-power surface-mounted electronic devices
US6037231A (en) * 1997-11-21 2000-03-14 Winbond Electronics Corporation Method for forming a MOS structure having sidewall source/drain and embedded gate
US5949104A (en) 1998-02-07 1999-09-07 Xemod, Inc. Source connection structure for lateral RF MOS devices
US6215360B1 (en) 1998-02-23 2001-04-10 Motorola, Inc. Semiconductor chip for RF transceiver and power output circuit therefor
US5918137A (en) * 1998-04-27 1999-06-29 Spectrian, Inc. MOS transistor with shield coplanar with gate electrode
US6063678A (en) 1998-05-04 2000-05-16 Xemod, Inc. Fabrication of lateral RF MOS devices with enhanced RF properties
US6048772A (en) 1998-05-04 2000-04-11 Xemod, Inc. Method for fabricating a lateral RF MOS device with an non-diffusion source-backside connection
US6133634A (en) 1998-08-05 2000-10-17 Fairchild Semiconductor Corporation High performance flip chip package
US6215152B1 (en) * 1998-08-05 2001-04-10 Cree, Inc. MOSFET having self-aligned gate and buried shield and method of making same
US6040626A (en) 1998-09-25 2000-03-21 International Rectifier Corp. Semiconductor package
US6087732A (en) 1998-09-28 2000-07-11 Lucent Technologies, Inc. Bond pad for a flip-chip package
US5998833A (en) * 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
US6177834B1 (en) 1998-12-02 2001-01-23 Ericsson, Inc. Output matched LDMOS power transistor device
US6452230B1 (en) 1998-12-23 2002-09-17 International Rectifier Corporation High voltage mosgated device with trenches to reduce on-resistance
US6222229B1 (en) * 1999-02-18 2001-04-24 Cree, Inc. Self-aligned shield structure for realizing high frequency power MOSFET devices with improved reliability
US6208210B1 (en) 1999-04-07 2001-03-27 Ericsson Inc. Advanced hybrid power amplifier design
US6433385B1 (en) * 1999-05-19 2002-08-13 Fairchild Semiconductor Corporation MOS-gated power device having segmented trench and extended doping zone and process for forming same
AU5304500A (en) 1999-06-07 2000-12-28 Ericsson Inc. High impedance matched rf power transistor
US6137165A (en) 1999-06-25 2000-10-24 International Rectifier Corp. Hybrid package including a power MOSFET die and a control and protection circuit die with a smaller sense MOSFET
US6207508B1 (en) 1999-08-03 2001-03-27 Stmicroelectronics, Inc. Method for fabricating a radio frequency power MOSFET device having improved performance characteristics
US6271552B1 (en) 1999-10-04 2001-08-07 Xemod, Inc Lateral RF MOS device with improved breakdown voltage
US6222233B1 (en) 1999-10-04 2001-04-24 Xemod, Inc. Lateral RF MOS device with improved drain structure
US6211735B1 (en) 2000-01-21 2001-04-03 Harris Corporation RF power amplifier having improved power supply for RF drive circuits
US6376878B1 (en) * 2000-02-11 2002-04-23 Fairchild Semiconductor Corporation MOS-gated devices with alternating zones of conductivity
US6781194B2 (en) * 2001-04-11 2004-08-24 Silicon Semiconductor Corporation Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein
US6653691B2 (en) * 2000-11-16 2003-11-25 Silicon Semiconductor Corporation Radio frequency (RF) power devices having faraday shield layers therein
US6608350B2 (en) * 2000-12-07 2003-08-19 International Rectifier Corporation High voltage vertical conduction superjunction semiconductor device
US6555873B2 (en) * 2001-09-07 2003-04-29 Power Integrations, Inc. High-voltage lateral transistor with a multi-layered extended drain structure

Also Published As

Publication number Publication date
US20020056883A1 (en) 2002-05-16
US6525372B2 (en) 2003-02-25
US6586833B2 (en) 2003-07-01
US20040048488A1 (en) 2004-03-11
US20020057610A1 (en) 2002-05-16
US20020056872A1 (en) 2002-05-16
WO2002041402A2 (en) 2002-05-23
WO2002041402A3 (en) 2004-02-26
US6649975B2 (en) 2003-11-18
US20020056884A1 (en) 2002-05-16
US6653691B2 (en) 2003-11-25

Similar Documents

Publication Publication Date Title
AU2002230482A1 (en) Discrete and packaged power devices for radio frequency (rf) applications and methods of forming same
AU4463201A (en) Antenna for high-frequency radio, high-frequency radio device and high-frequencyradio device of watch type
AU2001250220A1 (en) Apparatus and method for production testing of the rf performance of wireless communications devices
AU2002351307A1 (en) RF MEMs-TUNED SLOT ANTENNA AND A METHOD OF MAKING SAME
AU2002225305A1 (en) Radio frequency transmitter and methods thereof
AU2002360464A1 (en) Miniature rf and microwave components and methods for fabricating such components
AU2001280827A1 (en) Electronic device cover with embedded radio frequency (rf) transponder and methods of using same
AU2002359723A1 (en) Microstrip antennas and methods of designing same
HK1053392A1 (en) High frequency amplifier and high-frequency mixer
AU2003211162A1 (en) High frequency semiconductor device and method of manufacture
AU2001252902A1 (en) Radio frequency aperture
AU2002246566A1 (en) Active radio frequency cavity amplifier
GB2360159B (en) Multichannel-type radio frequency modulation circuit
AU2002218307A1 (en) A radio frequency amplifying circuit
AU2001255629A1 (en) Radio frequency coverage of enclosed regions
AUPR048500A0 (en) Radio frequency communications
AU2000267455A1 (en) Programmable radio frequency predistortion linearizer and method thereof
AU2002213881A1 (en) Method and device for producing radio frequency waves
AU8495898A (en) Radio frequency (rf) communications core and method of using same
AU2001232634A1 (en) Radio frequency beacon
AU2001263102A1 (en) Improved rf shielding of a radio base station
GB0226394D0 (en) Radio frequency and microwave signals
AU2001260980A1 (en) Active control of electron temperature in an electrostatically shielded radio frequency plasma source
AU2002304813A1 (en) A radio frequency (rf) device and its method of manufacture
AU2380300A (en) A radio frequency (rf) switch using a single quarter wave isolating section and method of forming same