AU5304500A - High impedance matched rf power transistor - Google Patents

High impedance matched rf power transistor

Info

Publication number
AU5304500A
AU5304500A AU53045/00A AU5304500A AU5304500A AU 5304500 A AU5304500 A AU 5304500A AU 53045/00 A AU53045/00 A AU 53045/00A AU 5304500 A AU5304500 A AU 5304500A AU 5304500 A AU5304500 A AU 5304500A
Authority
AU
Australia
Prior art keywords
high impedance
power transistor
impedance matched
matched
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU53045/00A
Inventor
Robert Bartola
James Mogel
Thomas Moller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ericsson Inc
Original Assignee
Ericsson Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Inc filed Critical Ericsson Inc
Publication of AU5304500A publication Critical patent/AU5304500A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
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    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/491—Disposition
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
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    • H01L2924/19041—Component type being a capacitor
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    • H01L2924/19042—Component type being an inductor
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    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H01L2924/30111—Impedance matching

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Amplifiers (AREA)
AU53045/00A 1999-06-07 2000-05-30 High impedance matched rf power transistor Abandoned AU5304500A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US32704899A 1999-06-07 1999-06-07
US09327048 1999-06-07
PCT/US2000/014848 WO2000075990A1 (en) 1999-06-07 2000-05-30 High impedance matched rf power transistor

Publications (1)

Publication Number Publication Date
AU5304500A true AU5304500A (en) 2000-12-28

Family

ID=23274908

Family Applications (1)

Application Number Title Priority Date Filing Date
AU53045/00A Abandoned AU5304500A (en) 1999-06-07 2000-05-30 High impedance matched rf power transistor

Country Status (2)

Country Link
AU (1) AU5304500A (en)
WO (1) WO2000075990A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6653691B2 (en) 2000-11-16 2003-11-25 Silicon Semiconductor Corporation Radio frequency (RF) power devices having faraday shield layers therein
US6455925B1 (en) * 2001-03-27 2002-09-24 Ericsson Inc. Power transistor package with integrated flange for surface mount heat removal
US6455905B1 (en) * 2001-04-05 2002-09-24 Ericsson Inc. Single chip push-pull power transistor device
EP1472734A2 (en) * 2002-01-24 2004-11-03 Koninklijke Philips Electronics N.V. Rf amplifier
US6903447B2 (en) * 2002-05-09 2005-06-07 M/A-Com, Inc. Apparatus, methods and articles of manufacture for packaging an integrated circuit with internal matching
AU2003267226A1 (en) * 2002-05-09 2003-11-11 M/A-Com, Inc. Integrated circuit with internal impedance matching circuit
US6734728B1 (en) * 2002-12-19 2004-05-11 Infineon Technologies North America Corp. RF power transistor with internal bias feed
JP4575261B2 (en) * 2005-09-14 2010-11-04 株式会社東芝 High frequency package
US8659359B2 (en) 2010-04-22 2014-02-25 Freescale Semiconductor, Inc. RF power transistor circuit
US9035702B2 (en) 2012-03-08 2015-05-19 Kabushiki Kaisha Toshiba Microwave semiconductor amplifier
US9281283B2 (en) * 2012-09-12 2016-03-08 Freescale Semiconductor, Inc. Semiconductor devices with impedance matching-circuits
CN103618507B (en) * 2013-12-16 2017-01-18 北京美电环宇科技有限公司 Radio frequency power amplifier system and lighting equipment
US10432152B2 (en) 2015-05-22 2019-10-01 Nxp Usa, Inc. RF amplifier output circuit device with integrated current path, and methods of manufacture thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3784884A (en) * 1972-11-03 1974-01-08 Motorola Inc Low parasitic microwave package
JPS5791542A (en) * 1980-11-29 1982-06-07 Toshiba Corp High frequency transistor device
EP0180906B1 (en) * 1984-11-02 1989-01-18 Siemens Aktiengesellschaft Wave resistance-adapted chip support for a microwave semiconductor
US4967258A (en) * 1989-03-02 1990-10-30 Ball Corporation Structure for use in self-biasing and source bypassing a packaged, field-effect transistor and method for making same
JP2864841B2 (en) * 1992-02-04 1999-03-08 三菱電機株式会社 High frequency high power transistor
JPH10294401A (en) * 1997-04-21 1998-11-04 Matsushita Electric Ind Co Ltd Package and semiconductor device

Also Published As

Publication number Publication date
WO2000075990A1 (en) 2000-12-14

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase