AU2001260904A1 - Power transistors for radio frequencies - Google Patents

Power transistors for radio frequencies

Info

Publication number
AU2001260904A1
AU2001260904A1 AU2001260904A AU6090401A AU2001260904A1 AU 2001260904 A1 AU2001260904 A1 AU 2001260904A1 AU 2001260904 A AU2001260904 A AU 2001260904A AU 6090401 A AU6090401 A AU 6090401A AU 2001260904 A1 AU2001260904 A1 AU 2001260904A1
Authority
AU
Australia
Prior art keywords
power transistors
radio frequencies
frequencies
radio
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001260904A
Inventor
Andrej Litwin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefonaktiebolaget LM Ericsson AB
Original Assignee
Telefonaktiebolaget LM Ericsson AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefonaktiebolaget LM Ericsson AB filed Critical Telefonaktiebolaget LM Ericsson AB
Publication of AU2001260904A1 publication Critical patent/AU2001260904A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
AU2001260904A 2000-05-17 2001-05-17 Power transistors for radio frequencies Abandoned AU2001260904A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE0001815A SE520109C2 (en) 2000-05-17 2000-05-17 Power transistors for radio frequencies
SE0001815 2000-05-17
PCT/SE2001/001098 WO2001088980A1 (en) 2000-05-17 2001-05-17 Power transistors for radio frequencies

Publications (1)

Publication Number Publication Date
AU2001260904A1 true AU2001260904A1 (en) 2001-11-26

Family

ID=20279700

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001260904A Abandoned AU2001260904A1 (en) 2000-05-17 2001-05-17 Power transistors for radio frequencies

Country Status (6)

Country Link
US (1) US6507047B2 (en)
EP (1) EP1287559A1 (en)
AU (1) AU2001260904A1 (en)
SE (1) SE520109C2 (en)
TW (1) TW469647B (en)
WO (1) WO2001088980A1 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100413060C (en) * 2003-09-04 2008-08-20 松下电器产业株式会社 Semiconductor device
US7829883B2 (en) * 2004-02-12 2010-11-09 International Business Machines Corporation Vertical carbon nanotube field effect transistors and arrays
US20110068410A1 (en) * 2009-09-18 2011-03-24 Garnett Martin E Silicon die floorplan with application to high-voltage field effect transistors
CN102034823B (en) * 2009-09-30 2013-01-02 意法半导体研发(深圳)有限公司 Layout and bonding pad floor planning for power transistor with favorable SPU (Short-to-Plus Unpowered) and STOG (Short-to-Open circuit Grounded) performance
US8519916B2 (en) * 2010-08-11 2013-08-27 Sarda Technologies, Inc. Low interconnect resistance integrated switches
US8896034B1 (en) 2010-08-11 2014-11-25 Sarda Technologies, Inc. Radio frequency and microwave devices and methods of use
US9236378B2 (en) 2010-08-11 2016-01-12 Sarda Technologies, Inc. Integrated switch devices
US9425262B2 (en) 2014-05-29 2016-08-23 Fairchild Semiconductor Corporation Configuration of portions of a power device within a silicon carbide crystal
CN104778307B (en) * 2015-03-12 2017-08-25 浙江大学 Based on GaAs PHEMT MMIC heat emulation equivalent models
US10134839B2 (en) * 2015-05-08 2018-11-20 Raytheon Company Field effect transistor structure having notched mesa
US10128365B2 (en) 2016-03-17 2018-11-13 Cree, Inc. Bypassed gate transistors having improved stability
US9786660B1 (en) 2016-03-17 2017-10-10 Cree, Inc. Transistor with bypassed gate structure field
US9947616B2 (en) 2016-03-17 2018-04-17 Cree, Inc. High power MMIC devices having bypassed gate transistors
US9774322B1 (en) 2016-06-22 2017-09-26 Sarda Technologies, Inc. Gate driver for depletion-mode transistors
US10763334B2 (en) 2018-07-11 2020-09-01 Cree, Inc. Drain and/or gate interconnect and finger structure
US10483352B1 (en) 2018-07-11 2019-11-19 Cree, Inc. High power transistor with interior-fed gate fingers
US10600746B2 (en) 2018-07-19 2020-03-24 Cree, Inc. Radio frequency transistor amplifiers and other multi-cell transistors having gaps and/or isolation structures between groups of unit cell transistors
US10770415B2 (en) 2018-12-04 2020-09-08 Cree, Inc. Packaged transistor devices with input-output isolation and methods of forming packaged transistor devices with input-output isolation
US11417746B2 (en) 2019-04-24 2022-08-16 Wolfspeed, Inc. High power transistor with interior-fed fingers

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69007351T2 (en) 1989-06-30 1994-09-08 Texas Instruments Inc Thermally optimized transistor connected in parallel.
US5319237A (en) * 1990-03-09 1994-06-07 Thomson Composants Microondes Power semiconductor component
US5270554A (en) * 1991-06-14 1993-12-14 Cree Research, Inc. High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide
US5264713A (en) * 1991-06-14 1993-11-23 Cree Research, Inc. Junction field-effect transistor formed in silicon carbide
US5294814A (en) * 1992-06-09 1994-03-15 Kobe Steel Usa Vertical diamond field effect transistor
US5726463A (en) * 1992-08-07 1998-03-10 General Electric Company Silicon carbide MOSFET having self-aligned gate structure
US5686737A (en) 1994-09-16 1997-11-11 Cree Research, Inc. Self-aligned field-effect transistor for high frequency applications
FR2737342B1 (en) 1995-07-25 1997-08-22 Thomson Csf SEMICONDUCTOR COMPONENT WITH INTEGRATED THERMAL DISSIPATOR
US5801442A (en) * 1996-07-22 1998-09-01 Northrop Grumman Corporation Microchannel cooling of high power semiconductor devices
JP3481813B2 (en) * 1997-02-28 2003-12-22 Ｎｅｃ化合物デバイス株式会社 Semiconductor device

Also Published As

Publication number Publication date
TW469647B (en) 2001-12-21
US6507047B2 (en) 2003-01-14
SE0001815L (en) 2002-01-17
SE520109C2 (en) 2003-05-27
US20020014670A1 (en) 2002-02-07
WO2001088980A1 (en) 2001-11-22
SE0001815D0 (en) 2000-05-17
EP1287559A1 (en) 2003-03-05

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