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GB0404748D0 - Trench field effect transistor and method of making it - Google Patents

Trench field effect transistor and method of making it

Info

Publication number
GB0404748D0
GB0404748D0 GB0404748A GB0404748A GB0404748D0 GB 0404748 D0 GB0404748 D0 GB 0404748D0 GB 0404748 A GB0404748 A GB 0404748A GB 0404748 A GB0404748 A GB 0404748A GB 0404748 D0 GB0404748 D0 GB 0404748D0
Authority
GB
Grant status
Grant
Patent type
Prior art keywords
trench
field
making
effect
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GB0404748A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

GB0404748A 2004-03-03 2004-03-03 Trench field effect transistor and method of making it Ceased GB0404748D0 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB0404748A GB0404748D0 (en) 2004-03-03 2004-03-03 Trench field effect transistor and method of making it

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0404748A GB0404748D0 (en) 2004-03-03 2004-03-03 Trench field effect transistor and method of making it
PCT/IB2005/050652 WO2005088723A1 (en) 2004-03-03 2005-02-23 Trench field-effect transistor

Publications (1)

Publication Number Publication Date
GB0404748D0 true GB0404748D0 (en) 2004-04-07

Family

ID=32088615

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0404748A Ceased GB0404748D0 (en) 2004-03-03 2004-03-03 Trench field effect transistor and method of making it

Country Status (2)

Country Link
GB (1) GB0404748D0 (en)
WO (1) WO2005088723A1 (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4528460B2 (en) * 2000-06-30 2010-08-18 株式会社東芝 Semiconductor element
US6586833B2 (en) * 2000-11-16 2003-07-01 Silicon Semiconductor Corporation Packaged power devices having vertical power mosfets therein that are flip-chip mounted to slotted gate electrode strip lines
US6815767B2 (en) * 2001-02-01 2004-11-09 Mitsubishi Denki Kabushiki Kaisha Insulated gate transistor

Also Published As

Publication number Publication date Type
WO2005088723A1 (en) 2005-09-22 application

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)