CN103219386B - 一种具有高k绝缘区的横向功率器件 - Google Patents
一种具有高k绝缘区的横向功率器件 Download PDFInfo
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- CN103219386B CN103219386B CN201310141405.2A CN201310141405A CN103219386B CN 103219386 B CN103219386 B CN 103219386B CN 201310141405 A CN201310141405 A CN 201310141405A CN 103219386 B CN103219386 B CN 103219386B
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- 238000009413 insulation Methods 0.000 title claims abstract description 54
- 239000004065 semiconductor Substances 0.000 claims abstract description 58
- 230000005669 field effect Effects 0.000 claims abstract description 5
- 230000035755 proliferation Effects 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000012212 insulator Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- -1 SOI Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000012774 insulation material Substances 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 230000005684 electric field Effects 0.000 abstract description 27
- 238000000034 method Methods 0.000 abstract description 17
- 238000009826 distribution Methods 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 9
- 239000011810 insulating material Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
Abstract
Description
Claims (6)
Priority Applications (1)
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CN201310141405.2A CN103219386B (zh) | 2013-04-22 | 2013-04-22 | 一种具有高k绝缘区的横向功率器件 |
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CN201310141405.2A CN103219386B (zh) | 2013-04-22 | 2013-04-22 | 一种具有高k绝缘区的横向功率器件 |
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CN103219386A CN103219386A (zh) | 2013-07-24 |
CN103219386B true CN103219386B (zh) | 2016-01-20 |
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Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103745997A (zh) * | 2013-12-31 | 2014-04-23 | 上海新傲科技股份有限公司 | 带有超结结构的高压晶体管及其制备方法 |
CN104201206B (zh) * | 2014-08-29 | 2016-09-21 | 电子科技大学 | 一种横向soi功率ldmos器件 |
CN105118861B (zh) * | 2015-08-21 | 2018-01-12 | 西南交通大学 | 一种横向finfet器件 |
TWI641131B (zh) * | 2016-08-23 | 2018-11-11 | 新唐科技股份有限公司 | 橫向雙擴散金屬氧化半導體元件 |
CN107863387B (zh) * | 2017-08-07 | 2021-03-23 | 南京邮电大学 | 一种横向功率器件的高压互连结构 |
CN107785414B (zh) * | 2017-10-27 | 2020-10-02 | 电子科技大学 | 具有混合导电模式的横向功率器件及其制备方法 |
CN111640786B (zh) * | 2020-06-12 | 2021-11-23 | 电子科技大学 | 一种具有多沟槽的ligbt器件 |
CN113782591A (zh) * | 2021-09-10 | 2021-12-10 | 南京邮电大学 | 一种介质增强横向超结功率器件 |
CN113871489B (zh) * | 2021-12-02 | 2022-02-22 | 南京邮电大学 | 一种全环绕多通道漂移区横向功率器件及其制造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1630092A (zh) * | 2003-12-15 | 2005-06-22 | 电子科技大学 | 具有表面横向3d-resurf层的新型功率器件 |
DE102005003127B3 (de) * | 2005-01-21 | 2006-06-14 | Infineon Technologies Ag | Laterales Halbleiterbauelement mit hoher Spannungsfestigkeit und Verfahren zur Herstellung desselben |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2008086366A2 (en) * | 2007-01-09 | 2008-07-17 | Maxpower Semiconductor, Inc. | Semiconductor device |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1630092A (zh) * | 2003-12-15 | 2005-06-22 | 电子科技大学 | 具有表面横向3d-resurf层的新型功率器件 |
DE102005003127B3 (de) * | 2005-01-21 | 2006-06-14 | Infineon Technologies Ag | Laterales Halbleiterbauelement mit hoher Spannungsfestigkeit und Verfahren zur Herstellung desselben |
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