JP2009010402A5 - - Google Patents

Download PDF

Info

Publication number
JP2009010402A5
JP2009010402A5 JP2008206941A JP2008206941A JP2009010402A5 JP 2009010402 A5 JP2009010402 A5 JP 2009010402A5 JP 2008206941 A JP2008206941 A JP 2008206941A JP 2008206941 A JP2008206941 A JP 2008206941A JP 2009010402 A5 JP2009010402 A5 JP 2009010402A5
Authority
JP
Japan
Prior art keywords
polishing
substrate
abrasive
particles
abrasive according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008206941A
Other languages
English (en)
Japanese (ja)
Other versions
JP4941430B2 (ja
JP2009010402A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008206941A priority Critical patent/JP4941430B2/ja
Priority claimed from JP2008206941A external-priority patent/JP4941430B2/ja
Publication of JP2009010402A publication Critical patent/JP2009010402A/ja
Publication of JP2009010402A5 publication Critical patent/JP2009010402A5/ja
Application granted granted Critical
Publication of JP4941430B2 publication Critical patent/JP4941430B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2008206941A 2001-02-20 2008-08-11 研磨剤及び基板の研磨方法 Expired - Lifetime JP4941430B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008206941A JP4941430B2 (ja) 2001-02-20 2008-08-11 研磨剤及び基板の研磨方法

Applications Claiming Priority (21)

Application Number Priority Date Filing Date Title
JP2001044252 2001-02-20
JP2001044252 2001-02-20
JP2001197274 2001-06-28
JP2001197274 2001-06-28
JP2001350598 2001-11-15
JP2001350598 2001-11-15
JP2001378838 2001-12-12
JP2001378838 2001-12-12
JP2001400866 2001-12-28
JP2001400891 2001-12-28
JP2001400888 2001-12-28
JP2001400866 2001-12-28
JP2001400888 2001-12-28
JP2001400882 2001-12-28
JP2001400891 2001-12-28
JP2001400876 2001-12-28
JP2001400876 2001-12-28
JP2001400882 2001-12-28
JP2001400872 2001-12-28
JP2001400872 2001-12-28
JP2008206941A JP4941430B2 (ja) 2001-02-20 2008-08-11 研磨剤及び基板の研磨方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2002566539A Division JPWO2002067309A1 (ja) 2001-02-20 2002-02-20 研磨剤及び基板の研磨方法

Publications (3)

Publication Number Publication Date
JP2009010402A JP2009010402A (ja) 2009-01-15
JP2009010402A5 true JP2009010402A5 (enExample) 2011-05-19
JP4941430B2 JP4941430B2 (ja) 2012-05-30

Family

ID=27580547

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2002566539A Withdrawn JPWO2002067309A1 (ja) 2001-02-20 2002-02-20 研磨剤及び基板の研磨方法
JP2008206941A Expired - Lifetime JP4941430B2 (ja) 2001-02-20 2008-08-11 研磨剤及び基板の研磨方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2002566539A Withdrawn JPWO2002067309A1 (ja) 2001-02-20 2002-02-20 研磨剤及び基板の研磨方法

Country Status (6)

Country Link
US (1) US6786945B2 (enExample)
EP (2) EP1369906B1 (enExample)
JP (2) JPWO2002067309A1 (enExample)
KR (1) KR100512134B1 (enExample)
CN (2) CN1290162C (enExample)
WO (1) WO2002067309A1 (enExample)

Families Citing this family (149)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030087178A1 (en) * 2001-04-20 2003-05-08 Adrian Lungu Photopolymerizable element for use as a flexographic printing plate and a process for preparing the plate from the element
US7563753B2 (en) * 2001-12-12 2009-07-21 Hynix Semiconductor Inc. Cleaning solution for removing photoresist
US7316603B2 (en) * 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
TWI282360B (en) * 2002-06-03 2007-06-11 Hitachi Chemical Co Ltd Polishing composition and polishing method thereof
TW592894B (en) * 2002-11-19 2004-06-21 Iv Technologies Co Ltd Method of fabricating a polishing pad
WO2004053456A2 (en) * 2002-12-09 2004-06-24 Corning Incorporated Method using multi-component colloidal abrasives for cmp processing of semiconductor and optical materials
US7553345B2 (en) * 2002-12-26 2009-06-30 Kao Corporation Polishing composition
US20040123528A1 (en) * 2002-12-30 2004-07-01 Jung Jong Goo CMP slurry for semiconductor device, and method for manufacturing semiconductor device using the same
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
JP2004297035A (ja) * 2003-03-13 2004-10-21 Hitachi Chem Co Ltd 研磨剤、研磨方法及び電子部品の製造方法
KR100539983B1 (ko) * 2003-05-15 2006-01-10 학교법인 한양학원 Ｃｍｐ용 세리아 연마제 및 그 제조 방법
JP3974127B2 (ja) * 2003-09-12 2007-09-12 株式会社東芝 半導体装置の製造方法
EP1682625A1 (en) * 2003-11-14 2006-07-26 Showa Denko K.K. Polishing composition and polishing method
KR100682188B1 (ko) * 2003-11-25 2007-02-12 주식회사 하이닉스반도체 포토레지스트 세정액 조성물 및 이를 이용한 패턴 형성방법
TWI334882B (en) 2004-03-12 2010-12-21 K C Tech Co Ltd Polishing slurry and method of producing same
TW200613485A (en) * 2004-03-22 2006-05-01 Kao Corp Polishing composition
US7497967B2 (en) * 2004-03-24 2009-03-03 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Compositions and methods for polishing copper
US9293344B2 (en) * 2004-07-23 2016-03-22 Hitachi Chemical Company, Ltd. Cmp polishing slurry and method of polishing substrate
US7161247B2 (en) * 2004-07-28 2007-01-09 Cabot Microelectronics Corporation Polishing composition for noble metals
US20060021972A1 (en) * 2004-07-28 2006-02-02 Lane Sarah J Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
JP2006121001A (ja) * 2004-10-25 2006-05-11 Matsushita Electric Ind Co Ltd 半導体装置の製造方法および研磨剤
JP2006140361A (ja) * 2004-11-12 2006-06-01 Showa Denko Kk 研磨組成物
US20060108325A1 (en) * 2004-11-19 2006-05-25 Everson William J Polishing process for producing damage free surfaces on semi-insulating silicon carbide wafers
US20060135045A1 (en) * 2004-12-17 2006-06-22 Jinru Bian Polishing compositions for reducing erosion in semiconductor wafers
US7476620B2 (en) * 2005-03-25 2009-01-13 Dupont Air Products Nanomaterials Llc Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers
US20060216935A1 (en) * 2005-03-28 2006-09-28 Ferro Corporation Composition for oxide CMP in CMOS device fabrication
US7294044B2 (en) * 2005-04-08 2007-11-13 Ferro Corporation Slurry composition and method for polishing organic polymer-based ophthalmic substrates
US7467988B2 (en) * 2005-04-08 2008-12-23 Ferro Corporation Slurry composition and method for polishing organic polymer-based ophthalmic substrates
TWI361218B (en) * 2005-04-14 2012-04-01 Showa Denko Kk Polishing composition
TWI271555B (en) * 2005-06-13 2007-01-21 Basf Ag Slurry composition for polishing color filter
JP4679277B2 (ja) * 2005-07-11 2011-04-27 富士通セミコンダクター株式会社 半導体装置の製造方法
JP4481898B2 (ja) * 2005-07-25 2010-06-16 ユシロ化学工業株式会社 水性砥粒分散媒組成物
JP2007053213A (ja) * 2005-08-17 2007-03-01 Sumitomo Bakelite Co Ltd 研磨用組成物
TWI385226B (zh) 2005-09-08 2013-02-11 羅門哈斯電子材料Ｃｍｐ控股公司 用於移除聚合物阻障之研磨漿液
US7803203B2 (en) * 2005-09-26 2010-09-28 Cabot Microelectronics Corporation Compositions and methods for CMP of semiconductor materials
US20070075042A1 (en) * 2005-10-05 2007-04-05 Siddiqui Junaid A Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method
JP2007214518A (ja) 2006-02-13 2007-08-23 Fujifilm Corp 金属用研磨液
US20070209287A1 (en) * 2006-03-13 2007-09-13 Cabot Microelectronics Corporation Composition and method to polish silicon nitride
US7732393B2 (en) * 2006-03-20 2010-06-08 Cabot Microelectronics Corporation Oxidation-stabilized CMP compositions and methods
TW200801178A (en) * 2006-03-22 2008-01-01 Fujifilm Corp Cleaning solution for substrate for use in semiconductor device and cleaning method using the same
JPWO2007123235A1 (ja) * 2006-04-24 2009-09-10 日立化成工業株式会社 Ｃｍｐ用研磨液及び研磨方法
CN101073880B (zh) * 2006-05-16 2010-08-11 智胜科技股份有限公司 研磨垫及其制造方法
US7550092B2 (en) * 2006-06-19 2009-06-23 Epoch Material Co., Ltd. Chemical mechanical polishing composition
JP4197018B2 (ja) * 2006-07-31 2008-12-17 カシオ計算機株式会社 液晶表示装置の製造方法
US7538969B2 (en) * 2006-08-23 2009-05-26 Imation Corp. Servo pattern with encoded data
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
US20080083078A1 (en) * 2006-09-27 2008-04-10 Fellinger Thomas J Variable-length roller assembly for a rotary scrubber
US20080116171A1 (en) * 2006-11-22 2008-05-22 Clarkson University Method For The Preferential Polishing Of Silicon Nitride Versus Silicon Oxide
JP5281758B2 (ja) * 2007-05-24 2013-09-04 ユシロ化学工業株式会社 研磨用組成物
US20090031636A1 (en) * 2007-08-03 2009-02-05 Qianqiu Ye Polymeric barrier removal polishing slurry
US20090047870A1 (en) * 2007-08-16 2009-02-19 Dupont Air Products Nanomaterials Llc Reverse Shallow Trench Isolation Process
CN100469531C (zh) * 2007-09-14 2009-03-18 中国科学院上海光学精密机械研究所 氧化锌单晶衬底级基片的抛光方法
KR101232585B1 (ko) * 2007-09-21 2013-02-12 캐보트 마이크로일렉트로닉스 코포레이션 아미노실란으로 처리된 연마제 입자를 이용한 연마 조성물 및 방법
JP2009123880A (ja) * 2007-11-14 2009-06-04 Showa Denko Kk 研磨組成物
KR101564676B1 (ko) * 2008-02-01 2015-11-02 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 이를 이용한 연마 방법
JP5385306B2 (ja) * 2008-02-12 2014-01-08 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド セリア材料およびセリア材料を形成する方法
JP5326492B2 (ja) * 2008-02-12 2013-10-30 日立化成株式会社 Ｃｍｐ用研磨液、基板の研磨方法及び電子部品
JP5403922B2 (ja) * 2008-02-26 2014-01-29 富士フイルム株式会社 研磨液および研磨方法
US8617275B2 (en) * 2008-04-23 2013-12-31 Hitachi Chemical Company, Ltd. Polishing agent and method for polishing substrate using the polishing agent
JP5287174B2 (ja) * 2008-04-30 2013-09-11 日立化成株式会社 研磨剤及び研磨方法
US20090307986A1 (en) * 2008-06-12 2009-12-17 Hung-Hui Huang Polishing composition and making method thereof for polishing a substrate
JP5894734B2 (ja) * 2008-06-18 2016-03-30 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
US8247327B2 (en) * 2008-07-30 2012-08-21 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates
EP2321378B1 (en) * 2008-09-12 2014-03-05 Ferro Corporation Chemical-mechanical polishing compositions and methods of making and using the same
JP5516396B2 (ja) * 2008-10-01 2014-06-11 旭硝子株式会社 研磨スラリー、その製造方法、研磨方法および磁気ディスク用ガラス基板の製造方法
US9074170B2 (en) 2008-10-21 2015-07-07 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
JP5499556B2 (ja) * 2008-11-11 2014-05-21 日立化成株式会社 スラリ及び研磨液セット並びにこれらから得られるｃｍｐ研磨液を用いた基板の研磨方法及び基板
JP2010153781A (ja) * 2008-11-20 2010-07-08 Hitachi Chem Co Ltd 基板の研磨方法
JP2010153782A (ja) * 2008-11-20 2010-07-08 Hitachi Chem Co Ltd 基板の研磨方法
CN103342986B (zh) * 2008-12-11 2015-01-07 日立化成株式会社 Cmp用研磨液以及使用该研磨液的研磨方法
JP5434111B2 (ja) * 2009-02-06 2014-03-05 三菱化学株式会社 自立基板の製造方法
JP5418590B2 (ja) * 2009-06-09 2014-02-19 日立化成株式会社 研磨剤、研磨剤セット及び基板の研磨方法
JP4894981B2 (ja) * 2009-10-22 2012-03-14 日立化成工業株式会社 研磨剤、濃縮１液式研磨剤、２液式研磨剤及び基板の研磨方法
DE102009051008B4 (de) * 2009-10-28 2013-05-23 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
US20120214307A1 (en) * 2009-11-12 2012-08-23 Hitachi Chemical Company, Ltd. Chemical-mechanical polishing liquid, and semiconductor substrate manufacturing method and polishing method using said polishing liquid
KR101675378B1 (ko) * 2010-02-25 2016-11-23 삼성전자주식회사 연마 슬러리 및 그를 이용한 절연막 평탄화 방법
JP5819589B2 (ja) * 2010-03-10 2015-11-24 株式会社フジミインコーポレーテッド 研磨用組成物を用いた方法
CN102666014B (zh) * 2010-03-12 2017-10-31 日立化成株式会社 悬浮液、研磨液套剂、研磨液以及使用它们的基板的研磨方法
JP5648567B2 (ja) 2010-05-07 2015-01-07 日立化成株式会社 Ｃｍｐ用研磨液及びこれを用いた研磨方法
RU2577281C2 (ru) * 2010-09-08 2016-03-10 Басф Се Водная полирующая композиция и способ химико-механического полирования материалов подложек для электрических, механических и оптических устройств
KR101894712B1 (ko) * 2010-09-08 2018-09-04 바스프 에스이 산화규소 유전체 필름 및 폴리실리콘 및/또는 질화규소 필름을 함유하는 기판의 화학적 기계적 연마 방법
GB2484348A (en) * 2010-10-08 2012-04-11 Rec Wafer Norway As Abrasive slurry and method of production of photovoltaic wafers
KR20130129399A (ko) * 2010-11-22 2013-11-28 히타치가세이가부시끼가이샤 지립의 제조 방법, 슬러리의 제조 방법 및 연마액의 제조 방법
US9988573B2 (en) * 2010-11-22 2018-06-05 Hitachi Chemical Company, Ltd. Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
JP5626358B2 (ja) 2010-11-22 2014-11-19 日立化成株式会社 スラリー、研磨液セット、研磨液、及び、基板の研磨方法
TWI573863B (zh) * 2010-12-28 2017-03-11 聖高拜陶器塑膠公司 包括氧化鋯顆粒的拋光漿料以及使用這種拋光漿料之方法
SG191877A1 (en) * 2011-01-25 2013-08-30 Hitachi Chemical Co Ltd Cmp polishing fluid, method for manufacturing same, method for manufacturing composite particle, and method for polishing base material
CN102240967A (zh) * 2011-06-24 2011-11-16 中国科学院福建物质结构研究所 可用于光电器件衬底的氧化锌单晶抛光技术
DE102011085833B4 (de) * 2011-11-07 2016-03-31 Photonic Sense GmbH Zusammensetzung zur Stabilisierung von Siliziumpartikeln in wässrigen Medien und deren Verwendung
CN103144011B (zh) * 2011-12-06 2016-05-18 有研半导体材料有限公司 一种控制硅片抛光表面微粗糙度的方法及抛光装置
US9346977B2 (en) 2012-02-21 2016-05-24 Hitachi Chemical Company, Ltd. Abrasive, abrasive set, and method for abrading substrate
CN108831830B (zh) 2012-02-21 2024-05-17 株式会社力森诺科 研磨剂、研磨剂组和基体的研磨方法
SG11201405381WA (en) * 2012-03-14 2014-10-30 Fujimi Inc Abrasive composition and method for producing semiconductor substrate
WO2013175856A1 (ja) * 2012-05-22 2013-11-28 日立化成株式会社 スラリー、研磨液セット、研磨液、基体の研磨方法及び基体
KR102034330B1 (ko) 2012-05-22 2019-10-18 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체
SG11201407086TA (en) 2012-05-22 2015-02-27 Hitachi Chemical Co Ltd Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate
WO2013175854A1 (ja) * 2012-05-22 2013-11-28 日立化成株式会社 スラリー、研磨液セット、研磨液、基体の研磨方法及び基体
SG11201407021QA (en) * 2012-05-22 2014-12-30 Hitachi Chemical Co Ltd Abrasive grains, slurry, polishing solution, and manufacturing methods therefor
CN104321403A (zh) * 2012-05-22 2015-01-28 日立化成株式会社 磨粒、悬浮液、研磨液及这些的制造方法
WO2014032012A1 (en) 2012-08-24 2014-02-27 Ecolab Usa Inc. Methods of polishing sapphire surfaces
US9163162B2 (en) 2012-08-30 2015-10-20 Hitachi Chemical Company, Ltd. Polishing agent, polishing agent set and method for polishing base
CN102967632B (zh) * 2012-11-30 2016-01-20 淄博包钢灵芝稀土高科技股份有限公司 用电导率指导抛光粉生产和产品质量控制的方法
CN103072086A (zh) * 2012-12-20 2013-05-01 杭州天诚机电设备有限公司 旋转磨料射流清洁方法及装置
JP2014130957A (ja) * 2012-12-28 2014-07-10 Kao Corp 半導体基板用研磨液組成物
WO2014129408A1 (ja) * 2013-02-21 2014-08-28 株式会社フジミインコーポレーテッド 研磨用組成物および研磨物製造方法
WO2014150884A1 (en) 2013-03-15 2014-09-25 Ecolab Usa Inc. Methods of polishing sapphire surfaces
US8906252B1 (en) * 2013-05-21 2014-12-09 Cabot Microelelctronics Corporation CMP compositions selective for oxide and nitride with high removal rate and low defectivity
WO2014199739A1 (ja) 2013-06-12 2014-12-18 日立化成株式会社 Ｃｍｐ用研磨液及び研磨方法
US10131819B2 (en) 2013-08-30 2018-11-20 Hitachi Chemical Company, Ltd Slurry, polishing solution set, polishing solution, and substrate polishing method
SG11201600902WA (en) 2013-09-10 2016-03-30 Hitachi Chemical Co Ltd Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate
US9281210B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
WO2015098197A1 (ja) 2013-12-26 2015-07-02 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
JP6732402B2 (ja) * 2014-07-17 2020-07-29 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
US20170275498A1 (en) * 2014-09-30 2017-09-28 Fujimi Incorporated Polishing composition
US9758697B2 (en) * 2015-03-05 2017-09-12 Cabot Microelectronics Corporation Polishing composition containing cationic polymer additive
US9505952B2 (en) * 2015-03-05 2016-11-29 Cabot Microelectronics Corporation Polishing composition containing ceria abrasive
US10414947B2 (en) 2015-03-05 2019-09-17 Cabot Microelectronics Corporation Polishing composition containing ceria particles and method of use
CN104877633A (zh) * 2015-05-26 2015-09-02 上海大学 镁元素掺杂氧化硅溶胶复合磨粒、抛光液及其制备方法
KR102463863B1 (ko) * 2015-07-20 2022-11-04 삼성전자주식회사 연마용 조성물 및 이를 이용한 반도체 장치의 제조 방법
SG11201801790UA (en) 2015-09-09 2018-04-27 Hitachi Chemical Co Ltd Polishing liquid, polishing liquid set, and substrate polishing method
JP6645136B2 (ja) * 2015-11-20 2020-02-12 日立化成株式会社 半導体基板の製造方法及び洗浄液
CN105332043A (zh) * 2015-11-24 2016-02-17 苏州盖德精细材料有限公司 一种不锈钢常温电解抛光液及其制备方法
US10442055B2 (en) 2016-02-18 2019-10-15 Iowa State University Research Foundation, Inc. Lubricated mechanical polishing
CN106366940A (zh) * 2016-08-31 2017-02-01 常熟市光学仪器有限责任公司 用于加工光学玻璃的抛光液
JP6720791B2 (ja) * 2016-09-13 2020-07-08 Ａｇｃ株式会社 研磨剤と研磨方法、および研磨用添加液
CN106392792A (zh) * 2016-09-20 2017-02-15 福建福晶科技股份有限公司 一种用于高速抛光光学圆柱棒的装置
US10377014B2 (en) 2017-02-28 2019-08-13 Ecolab Usa Inc. Increased wetting of colloidal silica as a polishing slurry
CN106956212B (zh) * 2017-03-17 2018-12-04 衢州学院 一种采用化学抛光液和陶瓷抛光盘的氮化铝基片抛光方法
KR102278257B1 (ko) * 2017-03-27 2021-07-15 쇼와덴코머티리얼즈가부시끼가이샤 슬러리 및 연마 방법
WO2018179061A1 (ja) * 2017-03-27 2018-10-04 日立化成株式会社 研磨液、研磨液セット及び研磨方法
KR102475282B1 (ko) * 2017-03-29 2022-12-07 삼성전자주식회사 화학적 기계적 연마용 슬러리 조성물
WO2019043819A1 (ja) 2017-08-30 2019-03-07 日立化成株式会社 スラリ及び研磨方法
CN107841288A (zh) * 2017-12-12 2018-03-27 戚明海 Cmp研磨剂及其制造方法
KR20190074594A (ko) * 2017-12-20 2019-06-28 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물
KR20190074597A (ko) 2017-12-20 2019-06-28 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물
KR102478439B1 (ko) 2018-01-18 2022-12-15 쇼와덴코머티리얼즈가부시끼가이샤 연마액, 연마액 세트 및 연마 방법
CN110153873B (zh) * 2018-02-14 2021-06-11 台湾积体电路制造股份有限公司 研磨设备、检测装置以及半导体基板的研磨方法
WO2020021680A1 (ja) 2018-07-26 2020-01-30 日立化成株式会社 スラリ及び研磨方法
KR102576637B1 (ko) 2018-03-22 2023-09-07 가부시끼가이샤 레조낙 연마액, 연마액 세트 및 연마 방법
JP6939741B2 (ja) * 2018-08-31 2021-09-22 信越化学工業株式会社 希土類化合物粒子の製造方法
WO2020065723A1 (ja) 2018-09-25 2020-04-02 日立化成株式会社 スラリ及び研磨方法
US10759970B2 (en) * 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
KR20200076991A (ko) 2018-12-20 2020-06-30 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물
TWI846844B (zh) * 2019-03-25 2024-07-01 美商Ｃｍｃ材料有限責任公司 增進化學機械拋光（ｃｍｐ）漿料中粒子分散之添加劑
KR20210052694A (ko) * 2019-10-30 2021-05-11 삼성전자주식회사 Ito막 연마용 cmp 슬러리 조성물 및 이를 이용하는 반도체 소자의 제조 방법
JP7279850B2 (ja) * 2020-11-11 2023-05-23 株式会社レゾナック 研磨液及び研磨方法
JP7193033B2 (ja) 2020-11-11 2022-12-20 昭和電工マテリアルズ株式会社 研磨液及び研磨方法
CN115039203B (zh) * 2021-01-06 2025-11-07 株式会社力森诺科 研磨液、研磨液组及研磨方法
KR102679084B1 (ko) 2021-08-30 2024-06-27 주식회사 케이씨텍 산화세륨 연마입자 및 연마 슬러리 조성물

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3123452A (en) * 1964-03-03 Glass polish and process of polishing
US3097083A (en) * 1959-07-02 1963-07-09 American Potash & Chem Corp Polishing composition and process of forming same
US3761571A (en) * 1970-02-10 1973-09-25 Atomic Energy Authority Uk Production of ceria
FR2604443A1 (fr) * 1986-09-26 1988-04-01 Rhone Poulenc Chimie Composition de polissage a base de cerium destinee au polissage des verres organiques
JPH062582B2 (ja) * 1987-12-02 1994-01-12 多木化学株式会社 結晶質酸化第二セリウムゾル及びその製造法
FR2724331B1 (fr) * 1994-09-12 1996-12-13 Rhone Poulenc Chimie Dispersions colloidales d'un compose de cerium a ph eleve et leurs procedes de preparation
JP2864451B2 (ja) * 1994-11-07 1999-03-03 三井金属鉱業株式会社 研磨材及び研磨方法
JP3230986B2 (ja) * 1995-11-13 2001-11-19 株式会社東芝 ポリッシング方法、半導体装置の製造方法及び半導体製造装置。
JP2746861B2 (ja) * 1995-11-20 1998-05-06 三井金属鉱業株式会社 酸化セリウム超微粒子の製造方法
US6420269B2 (en) * 1996-02-07 2002-07-16 Hitachi Chemical Company, Ltd. Cerium oxide abrasive for polishing insulating films formed on substrate and methods for using the same
JPH09270402A (ja) 1996-03-29 1997-10-14 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の製造法
US5962343A (en) * 1996-07-30 1999-10-05 Nissan Chemical Industries, Ltd. Process for producing crystalline ceric oxide particles and abrasive
KR19980019046A (ko) * 1996-08-29 1998-06-05 고사이 아키오 연마용 조성물 및 이의 용도(Abrasive composition and use of the same)
JPH10106986A (ja) 1996-09-30 1998-04-24 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
JP3462052B2 (ja) * 1996-09-30 2003-11-05 日立化成工業株式会社 酸化セリウム研磨剤および基板の研磨法
JPH10172934A (ja) * 1996-12-05 1998-06-26 Fujimi Inkooporeetetsudo:Kk 研磨用組成物
JPH10172937A (ja) * 1996-12-05 1998-06-26 Fujimi Inkooporeetetsudo:Kk 研磨用組成物
JPH10172936A (ja) * 1996-12-05 1998-06-26 Fujimi Inkooporeetetsudo:Kk 研磨用組成物
US5876490A (en) * 1996-12-09 1999-03-02 International Business Machines Corporatin Polish process and slurry for planarization
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
JP3550285B2 (ja) 1997-10-31 2004-08-04 昭和電工株式会社 半導体装置用金属膜研磨スラリー
JPH11181403A (ja) * 1997-12-18 1999-07-06 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
JP3160248B2 (ja) * 1998-07-14 2001-04-25 インターナショナル・ビジネス・マシーンズ・コーポレ−ション デュアル原子価の希土類添加物を含む研摩用スラリー
JP2000053946A (ja) * 1998-08-05 2000-02-22 Showa Denko Kk 研磨材組成物
JP2000084832A (ja) * 1998-09-16 2000-03-28 Fuji Photo Film Co Ltd 研磨用組成物
JP3983949B2 (ja) * 1998-12-21 2007-09-26 昭和電工株式会社 研磨用酸化セリウムスラリー、その製造法及び研磨方法
JP2000192015A (ja) * 1998-12-25 2000-07-11 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JP3107546B2 (ja) * 1999-01-12 2000-11-13 日本ミクロコーティング株式会社 化学的機械的研磨加工方法
JP4277243B2 (ja) * 1999-05-17 2009-06-10 日立化成工業株式会社 セリウム化合物研磨剤及び基板の研磨法
US6248395B1 (en) * 1999-05-24 2001-06-19 Komag, Inc. Mechanical texturing of glass and glass-ceramic substrates
JP4544379B2 (ja) * 1999-06-28 2010-09-15 日産化学工業株式会社 ガラス製ハードディスク用研磨剤
JP2001031951A (ja) * 1999-07-22 2001-02-06 Hitachi Chem Co Ltd 研磨剤及び基板の研磨方法
JP2001077061A (ja) * 1999-09-03 2001-03-23 Seimi Chem Co Ltd 半導体用研磨剤
KR20020070319A (ko) * 1999-12-14 2002-09-05 로델 홀딩스 인코포레이티드 반도체 기판용 연마 조성물
JP2001192647A (ja) * 2000-01-14 2001-07-17 Seimi Chem Co Ltd 酸化セリウム含有研磨用組成物及び研磨方法
JP2001348563A (ja) * 2000-06-06 2001-12-18 Toray Ind Inc 研磨剤
JP2002097459A (ja) * 2000-09-25 2002-04-02 Toray Ind Inc 研磨剤
JP4885352B2 (ja) * 2000-12-12 2012-02-29 昭和電工株式会社 研磨材スラリー及び研磨微粉

Similar Documents

Publication Publication Date Title
JP2009010402A5 (enExample)
TWI453272B (zh) 研磨液
EP2017318B1 (en) Chemical mechanical polishing aqueous dispersion preparation set, method of preparing chemical mechanical polishing aqueous dispersion, chemical mechanical polishing aqueous dispersion, and chemical mechanical polishing method
TWI398473B (zh) 用於拋光在鑲嵌結構中之鋁／銅及鈦之組合物
KR102150403B1 (ko) 연마용 조성물
TWI286157B (en) Bicine/tricine containing composition and method for chemical-mechanical planarization
EP2071615A1 (en) Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method for semiconductor device
TWI608089B (zh) Grinding composition
KR101472617B1 (ko) 금속용 연마액 및 연마 방법
TW201116614A (en) Abrasive agent, condensed one-liquid type abrasive agent, two-liquid type abrasive agent and polishing method of substrate
CN104755580A (zh) 研磨用组合物
CN102127370A (zh) 用于cmp的涂覆金属氧化物颗粒
CN1193408C (zh) 含肽半导体用研磨剂
TW200302865A (en) Anionic abrasive particles treated with positively-charged polyelectrolytes for CMP
JPWO2007116770A1 (ja) 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット
TWI683896B (zh) 研磨用組成物
CN101796160A (zh) 包含离子型聚电解质的铜化学机械抛光组合物及方法
KR20150055617A (ko) 연마용 조성물
CN101597477A (zh) 化学机械研磨用水系分散体、电路基板及其制造方法
JP2011165759A (ja) Ｃｍｐ研磨液及びこのｃｍｐ研磨液を用いた研磨方法
TWI276171B (en) Metal polishing slurry and polishing method thereof
JPWO2016158328A1 (ja) 研摩材および研摩スラリー
TWI825146B (zh) 化學機械研磨用水系分散體及其製造方法、以及化學機械研磨方法
TW201139633A (en) Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing method using same, and kit for preparing aqueous dispersion for chemical mechanical polishing
TW200428509A (en) Chemical mechanical polishing agent kit and chemical mechanical polishing method using the same