CN1290162C - 抛光剂及基片的抛光方法 - Google Patents

抛光剂及基片的抛光方法 Download PDF

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Publication number
CN1290162C
CN1290162C CNB028003535A CN02800353A CN1290162C CN 1290162 C CN1290162 C CN 1290162C CN B028003535 A CNB028003535 A CN B028003535A CN 02800353 A CN02800353 A CN 02800353A CN 1290162 C CN1290162 C CN 1290162C
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China
Prior art keywords
polishing
acid
polishing agent
particles
insulating film
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Expired - Lifetime
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CNB028003535A
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Chinese (zh)
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CN1457506A (zh
Inventor
町井洋一
小山直之
西山雅也
吉田诚人
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Resonac Corp
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Hitachi Chemical Co Ltd
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Publication of CN1457506A publication Critical patent/CN1457506A/zh
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/20—Compounds containing only rare earth metals as the metal element
    • C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C01F17/224—Oxides or hydroxides of lanthanides
    • C01F17/235—Cerium oxides or hydroxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G25/00—Compounds of zirconium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/10—Solid density
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CNB028003535A 2001-02-20 2002-02-20 抛光剂及基片的抛光方法 Expired - Lifetime CN1290162C (zh)

Applications Claiming Priority (29)

Application Number Priority Date Filing Date Title
JP44252/01 2001-02-20
JP44252/2001 2001-02-20
JP2001044252 2001-02-20
JP2001197274 2001-06-28
JP197274/2001 2001-06-28
JP197274/01 2001-06-28
JP350598/2001 2001-11-15
JP2001350598 2001-11-15
JP350598/01 2001-11-15
JP378838/2001 2001-12-12
JP2001378838 2001-12-12
JP378838/01 2001-12-12
JP2001400866 2001-12-28
JP400891/2001 2001-12-28
JP400876/2001 2001-12-28
JP400872/01 2001-12-28
JP400876/01 2001-12-28
JP2001400876 2001-12-28
JP400882/01 2001-12-28
JP2001400872 2001-12-28
JP400866/01 2001-12-28
JP400888/2001 2001-12-28
JP2001400891 2001-12-28
JP400888/01 2001-12-28
JP400866/2001 2001-12-28
JP400882/2001 2001-12-28
JP2001400882 2001-12-28
JP2001400888 2001-12-28
JP400872/2001 2001-12-28

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2005101082599A Division CN1746255B (zh) 2001-02-20 2002-02-20 抛光剂及基片的抛光方法

Publications (2)

Publication Number Publication Date
CN1457506A CN1457506A (zh) 2003-11-19
CN1290162C true CN1290162C (zh) 2006-12-13

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CNB028003535A Expired - Lifetime CN1290162C (zh) 2001-02-20 2002-02-20 抛光剂及基片的抛光方法
CN2005101082599A Expired - Lifetime CN1746255B (zh) 2001-02-20 2002-02-20 抛光剂及基片的抛光方法

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Country Status (6)

Country Link
US (1) US6786945B2 (enExample)
EP (2) EP1369906B1 (enExample)
JP (2) JPWO2002067309A1 (enExample)
KR (1) KR100512134B1 (enExample)
CN (2) CN1290162C (enExample)
WO (1) WO2002067309A1 (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
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CN102666014A (zh) * 2010-03-12 2012-09-12 日立化成工业株式会社 悬浮液、研磨液套剂、研磨液以及使用它们的基板的研磨方法
CN104321854A (zh) * 2012-05-22 2015-01-28 日立化成株式会社 悬浮液、研磨液套剂、研磨液、基体的研磨方法及基体
CN104877633A (zh) * 2015-05-26 2015-09-02 上海大学 镁元素掺杂氧化硅溶胶复合磨粒、抛光液及其制备方法
US9881802B2 (en) 2010-11-22 2018-01-30 Hitachi Chemical Company, Ltd Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
US9932497B2 (en) 2012-05-22 2018-04-03 Hitachi Chemical Company, Ltd. Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate
US9988573B2 (en) 2010-11-22 2018-06-05 Hitachi Chemical Company, Ltd. Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
US10196542B2 (en) 2012-02-21 2019-02-05 Hitachi Chemical Company, Ltd Abrasive, abrasive set, and method for abrading substrate
US10557059B2 (en) 2012-05-22 2020-02-11 Hitachi Chemical Company, Ltd. Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate
US10557058B2 (en) 2012-02-21 2020-02-11 Hitachi Chemical Company, Ltd. Polishing agent, polishing agent set, and substrate polishing method

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US7563753B2 (en) * 2001-12-12 2009-07-21 Hynix Semiconductor Inc. Cleaning solution for removing photoresist
US7316603B2 (en) * 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
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TW592894B (en) * 2002-11-19 2004-06-21 Iv Technologies Co Ltd Method of fabricating a polishing pad
WO2004053456A2 (en) * 2002-12-09 2004-06-24 Corning Incorporated Method using multi-component colloidal abrasives for cmp processing of semiconductor and optical materials
US7553345B2 (en) * 2002-12-26 2009-06-30 Kao Corporation Polishing composition
US20040123528A1 (en) * 2002-12-30 2004-07-01 Jung Jong Goo CMP slurry for semiconductor device, and method for manufacturing semiconductor device using the same
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
JP2004297035A (ja) * 2003-03-13 2004-10-21 Hitachi Chem Co Ltd 研磨剤、研磨方法及び電子部品の製造方法
KR100539983B1 (ko) * 2003-05-15 2006-01-10 학교법인 한양학원 Ｃｍｐ용 세리아 연마제 및 그 제조 방법
JP3974127B2 (ja) * 2003-09-12 2007-09-12 株式会社東芝 半導体装置の製造方法
TW200521217A (en) * 2003-11-14 2005-07-01 Showa Denko Kk Polishing composition and polishing method
KR100682188B1 (ko) * 2003-11-25 2007-02-12 주식회사 하이닉스반도체 포토레지스트 세정액 조성물 및 이를 이용한 패턴 형성방법
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US9293344B2 (en) * 2004-07-23 2016-03-22 Hitachi Chemical Company, Ltd. Cmp polishing slurry and method of polishing substrate
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KR101675378B1 (ko) * 2010-02-25 2016-11-23 삼성전자주식회사 연마 슬러리 및 그를 이용한 절연막 평탄화 방법
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