SG11201405381WA - Abrasive composition and method for producing semiconductor substrate - Google Patents

Abrasive composition and method for producing semiconductor substrate

Info

Publication number
SG11201405381WA
SG11201405381WA SG11201405381WA SG11201405381WA SG11201405381WA SG 11201405381W A SG11201405381W A SG 11201405381WA SG 11201405381W A SG11201405381W A SG 11201405381WA SG 11201405381W A SG11201405381W A SG 11201405381WA SG 11201405381W A SG11201405381W A SG 11201405381WA
Authority
SG
Singapore
Prior art keywords
semiconductor substrate
abrasive composition
producing semiconductor
producing
abrasive
Prior art date
Application number
SG11201405381WA
Inventor
Yoshio Mori
Kohsuke Tsuchiya
Maki Asada
Shuhei Takahashi
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of SG11201405381WA publication Critical patent/SG11201405381WA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Composite Materials (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201405381WA 2012-03-14 2013-03-12 Abrasive composition and method for producing semiconductor substrate SG11201405381WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012057641 2012-03-14
PCT/JP2013/056702 WO2013137212A1 (en) 2012-03-14 2013-03-12 Abrasive composition and method for producing semiconductor substrate

Publications (1)

Publication Number Publication Date
SG11201405381WA true SG11201405381WA (en) 2014-10-30

Family

ID=49161118

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201405381WA SG11201405381WA (en) 2012-03-14 2013-03-12 Abrasive composition and method for producing semiconductor substrate

Country Status (7)

Country Link
US (1) US9685341B2 (en)
JP (1) JP6133271B2 (en)
KR (1) KR101970858B1 (en)
DE (1) DE112013001454T5 (en)
SG (1) SG11201405381WA (en)
TW (1) TWI558800B (en)
WO (1) WO2013137212A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5893706B2 (en) * 2013-10-25 2016-03-23 花王株式会社 Polishing liquid composition for silicon wafer
KR102209686B1 (en) * 2014-06-27 2021-01-29 동우 화인켐 주식회사 Etching solution composition for metal layer and manufacturing method of an array substrate for liquid crystal display using the same
KR102204210B1 (en) * 2014-06-27 2021-01-18 동우 화인켐 주식회사 Etching solution composition for metal layer and manufacturing method of an array substrate for Liquid crystal display using the same
JP6559936B2 (en) * 2014-09-05 2019-08-14 日本キャボット・マイクロエレクトロニクス株式会社 Slurry composition, rinse composition, substrate polishing method and rinse method
KR20180122318A (en) * 2016-03-01 2018-11-12 가부시키가이샤 후지미인코퍼레이티드 A polishing method of a silicon substrate and a polishing composition set
CN109673157B (en) * 2016-08-31 2021-05-07 福吉米株式会社 Polishing composition and polishing composition kit
EP3584298B1 (en) * 2017-02-17 2022-12-28 Fujimi Incorporated Polishing method using a polishing composition
JP6879798B2 (en) * 2017-03-30 2021-06-02 株式会社フジミインコーポレーテッド Polishing composition and polishing method
US10479911B1 (en) 2018-06-05 2019-11-19 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks exhibiting reduced edge roll off
CN113330539A (en) * 2019-01-23 2021-08-31 中央硝子株式会社 Dry etching method, dry etchant and storage container therefor
JP2021105145A (en) 2019-12-27 2021-07-26 ニッタ・デュポン株式会社 Composition for polishing, and method of polishing silicon wafer
JP2022099606A (en) 2020-12-23 2022-07-05 ニッタ・デュポン株式会社 Polishing composition and silicon wafer polishing method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000256656A (en) * 1999-03-04 2000-09-19 Hitachi Chem Co Ltd Cmp abrasive material and abrasion of substrate
US6786945B2 (en) * 2001-02-20 2004-09-07 Hitachi Chemical Co., Ltd. Polishing compound and method for polishing substrate
JP4668528B2 (en) 2003-09-05 2011-04-13 株式会社フジミインコーポレーテッド Polishing composition
US20060135045A1 (en) * 2004-12-17 2006-06-22 Jinru Bian Polishing compositions for reducing erosion in semiconductor wafers
JP2007214205A (en) 2006-02-07 2007-08-23 Fujimi Inc Polishing composition
JP2009147267A (en) 2007-12-18 2009-07-02 Dai Ichi Kogyo Seiyaku Co Ltd Polishing compound for chemical mechanical polishing
CN101933124B (en) * 2008-02-06 2012-07-04 Jsr株式会社 Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method
JP5781287B2 (en) 2009-10-01 2015-09-16 ニッタ・ハース株式会社 Polishing composition
JPWO2011158718A1 (en) * 2010-06-18 2013-08-19 日立化成株式会社 Polishing liquid for semiconductor substrate and method for manufacturing semiconductor wafer

Also Published As

Publication number Publication date
JP6133271B2 (en) 2017-05-24
DE112013001454T5 (en) 2015-01-15
TWI558800B (en) 2016-11-21
US20150079789A1 (en) 2015-03-19
KR101970858B1 (en) 2019-04-19
JPWO2013137212A1 (en) 2015-08-03
US9685341B2 (en) 2017-06-20
KR20140139541A (en) 2014-12-05
WO2013137212A1 (en) 2013-09-19
TW201350563A (en) 2013-12-16

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