SG11201405091TA - Polishing agent, polishing agent set, and substrate polishing method - Google Patents
Polishing agent, polishing agent set, and substrate polishing methodInfo
- Publication number
- SG11201405091TA SG11201405091TA SG11201405091TA SG11201405091TA SG11201405091TA SG 11201405091T A SG11201405091T A SG 11201405091TA SG 11201405091T A SG11201405091T A SG 11201405091TA SG 11201405091T A SG11201405091T A SG 11201405091TA SG 11201405091T A SG11201405091T A SG 11201405091TA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing
- polishing agent
- substrate
- agent
- agent set
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012035432 | 2012-02-21 | ||
| PCT/JP2013/053559 WO2013125446A1 (en) | 2012-02-21 | 2013-02-14 | Polishing agent, polishing agent set, and substrate polishing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201405091TA true SG11201405091TA (en) | 2014-09-26 |
Family
ID=49005633
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201606827RA SG10201606827RA (en) | 2012-02-21 | 2013-02-14 | Polishing agent, polishing agent set, and substrate polishing method |
| SG11201405091TA SG11201405091TA (en) | 2012-02-21 | 2013-02-14 | Polishing agent, polishing agent set, and substrate polishing method |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201606827RA SG10201606827RA (en) | 2012-02-21 | 2013-02-14 | Polishing agent, polishing agent set, and substrate polishing method |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10557058B2 (en) |
| JP (1) | JP6044630B2 (en) |
| KR (1) | KR102005132B1 (en) |
| CN (3) | CN107617968A (en) |
| SG (2) | SG10201606827RA (en) |
| TW (1) | TWI550045B (en) |
| WO (1) | WO2013125446A1 (en) |
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| CN104582899B (en) * | 2012-08-30 | 2018-11-09 | 日立化成株式会社 | The grinding method of grinding agent, grinding agent set agent and matrix |
| SG11201506296VA (en) | 2013-02-21 | 2015-09-29 | Fujimi Inc | Polishing composition and method for producing polished article |
| EP2977423B1 (en) * | 2013-03-19 | 2022-09-28 | Fujimi Incorporated | Polishing composition |
| US10717899B2 (en) | 2013-03-19 | 2020-07-21 | Fujimi Incorporated | Polishing composition, method for producing polishing composition and polishing composition preparation kit |
| EP3007213B1 (en) * | 2013-06-07 | 2020-03-18 | Fujimi Incorporated | Use of a composition for silicon wafer polishing |
| KR102225154B1 (en) | 2013-06-12 | 2021-03-09 | 쇼와덴코머티리얼즈가부시끼가이샤 | Polishing liquid for cmp, and polishing method |
| US9778122B2 (en) | 2013-08-01 | 2017-10-03 | Mts Systems Corporation | Two-axis sensor body for a load transducer |
| US10591373B2 (en) | 2013-08-01 | 2020-03-17 | Mts Systems Corporation | Load transducer having a biasing assembly |
| JP6428625B2 (en) * | 2013-08-30 | 2018-11-28 | 日立化成株式会社 | Slurry, polishing liquid set, polishing liquid, and substrate polishing method |
| WO2015037311A1 (en) | 2013-09-10 | 2015-03-19 | 日立化成株式会社 | Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate |
| KR101405333B1 (en) * | 2013-09-12 | 2014-06-11 | 유비머트리얼즈주식회사 | Abrasive particles, polishing slurry and method of manufacturing a semiconductor device using the same |
| WO2015052988A1 (en) * | 2013-10-10 | 2015-04-16 | 日立化成株式会社 | Polishing agent, polishing agent set and method for polishing base |
| KR102138406B1 (en) | 2013-12-26 | 2020-07-27 | 히타치가세이가부시끼가이샤 | Abrasive, abrasive set, and method for polishing substrate |
| JP6349852B2 (en) * | 2014-03-27 | 2018-07-04 | 日立化成株式会社 | Abrasive, stock solution for abrasive, and polishing method |
| JP6569191B2 (en) * | 2014-06-10 | 2019-09-04 | 日立化成株式会社 | Abrasive, abrasive set, and substrate polishing method |
| JP6268069B2 (en) * | 2014-09-12 | 2018-01-24 | 信越化学工業株式会社 | Polishing composition and polishing method |
| US20160181435A1 (en) * | 2014-12-22 | 2016-06-23 | Wafertech, Llc | Floating gate transistors and method for forming the same |
| JP6563957B2 (en) * | 2014-12-26 | 2019-08-21 | 花王株式会社 | Polishing liquid composition for polishing silicon oxide film |
| US9505952B2 (en) | 2015-03-05 | 2016-11-29 | Cabot Microelectronics Corporation | Polishing composition containing ceria abrasive |
| US9758697B2 (en) | 2015-03-05 | 2017-09-12 | Cabot Microelectronics Corporation | Polishing composition containing cationic polymer additive |
| US10414947B2 (en) | 2015-03-05 | 2019-09-17 | Cabot Microelectronics Corporation | Polishing composition containing ceria particles and method of use |
| TWI666308B (en) * | 2015-06-26 | 2019-07-21 | 日商日立化成股份有限公司 | Abrasive, storage solution for abrasive, and grinding method |
| KR102628333B1 (en) * | 2015-09-09 | 2024-01-22 | 가부시끼가이샤 레조낙 | Polishing liquid, polishing liquid set, and base polishing method |
| US10432461B2 (en) * | 2015-12-04 | 2019-10-01 | T-Mobile Usa, Inc. | Peer-to-peer distribution of radio protocol data for software defined radio (SDR) updates |
| WO2018142516A1 (en) * | 2017-02-01 | 2018-08-09 | 日立化成株式会社 | Polishing fluid, polishing fluid set, and polishing method |
| US11078380B2 (en) * | 2017-07-10 | 2021-08-03 | Entegris, Inc. | Hard abrasive particle-free polishing of hard materials |
| US10316218B2 (en) * | 2017-08-30 | 2019-06-11 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them |
| SG11202002314WA (en) * | 2017-09-29 | 2020-04-29 | Hitachi Chemical Co Ltd | Polishing solution, polishing solution set, and polishing method |
| JP7176225B2 (en) * | 2018-04-27 | 2022-11-22 | 昭和電工マテリアルズ株式会社 | Polishing liquid, polishing liquid set and polishing method |
| CN114193328A (en) * | 2020-09-18 | 2022-03-18 | 中国科学院微电子研究所 | Polishing agent container and polishing agent supply method |
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| JP5648567B2 (en) | 2010-05-07 | 2015-01-07 | 日立化成株式会社 | Polishing liquid for CMP and polishing method using the same |
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| JP5590144B2 (en) | 2010-11-22 | 2014-09-17 | 日立化成株式会社 | Slurry, polishing liquid set, polishing liquid, and substrate polishing method |
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| WO2013175859A1 (en) * | 2012-05-22 | 2013-11-28 | 日立化成株式会社 | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
| JP5943073B2 (en) * | 2012-05-22 | 2016-06-29 | 日立化成株式会社 | Slurry, polishing liquid set, polishing liquid and polishing method for substrate |
| JP5943072B2 (en) * | 2012-05-22 | 2016-06-29 | 日立化成株式会社 | Slurry, polishing liquid set, polishing liquid and polishing method for substrate |
| JP6060970B2 (en) * | 2012-05-22 | 2017-01-18 | 日立化成株式会社 | Slurry, polishing liquid set, polishing liquid and polishing method for substrate |
| JP6428625B2 (en) * | 2013-08-30 | 2018-11-28 | 日立化成株式会社 | Slurry, polishing liquid set, polishing liquid, and substrate polishing method |
| WO2015037311A1 (en) * | 2013-09-10 | 2015-03-19 | 日立化成株式会社 | Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate |
-
2013
- 2013-02-14 JP JP2014500686A patent/JP6044630B2/en active Active
- 2013-02-14 CN CN201710996717.XA patent/CN107617968A/en active Pending
- 2013-02-14 SG SG10201606827RA patent/SG10201606827RA/en unknown
- 2013-02-14 US US14/379,954 patent/US10557058B2/en active Active
- 2013-02-14 SG SG11201405091TA patent/SG11201405091TA/en unknown
- 2013-02-14 KR KR1020147024760A patent/KR102005132B1/en active IP Right Grant
- 2013-02-14 CN CN201810916995.4A patent/CN108831830A/en active Pending
- 2013-02-14 WO PCT/JP2013/053559 patent/WO2013125446A1/en active Application Filing
- 2013-02-14 CN CN201380010364.1A patent/CN104137232A/en active Pending
- 2013-02-20 TW TW102105885A patent/TWI550045B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013125446A1 (en) | 2013-08-29 |
| CN108831830A (en) | 2018-11-16 |
| KR102005132B1 (en) | 2019-07-29 |
| US10557058B2 (en) | 2020-02-11 |
| JPWO2013125446A1 (en) | 2015-07-30 |
| US20150017806A1 (en) | 2015-01-15 |
| CN107617968A (en) | 2018-01-23 |
| SG10201606827RA (en) | 2016-10-28 |
| TWI550045B (en) | 2016-09-21 |
| KR20140129092A (en) | 2014-11-06 |
| TW201343825A (en) | 2013-11-01 |
| JP6044630B2 (en) | 2016-12-14 |
| CN104137232A (en) | 2014-11-05 |
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