SG11201401309PA - Composition for polishing purposes, polishing method using same, and method for producing substrate - Google Patents

Composition for polishing purposes, polishing method using same, and method for producing substrate

Info

Publication number
SG11201401309PA
SG11201401309PA SG11201401309PA SG11201401309PA SG11201401309PA SG 11201401309P A SG11201401309P A SG 11201401309PA SG 11201401309P A SG11201401309P A SG 11201401309PA SG 11201401309P A SG11201401309P A SG 11201401309PA SG 11201401309P A SG11201401309P A SG 11201401309PA
Authority
SG
Singapore
Prior art keywords
polishing
composition
same
purposes
producing substrate
Prior art date
Application number
SG11201401309PA
Inventor
Kohsuke Tsuchiya
Yoshio Mori
Shinichiro Takami
Shuhei Takahashi
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of SG11201401309PA publication Critical patent/SG11201401309PA/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02024Mirror polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201401309PA 2011-10-24 2012-10-09 Composition for polishing purposes, polishing method using same, and method for producing substrate SG11201401309PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011233208 2011-10-24
PCT/JP2012/076125 WO2013061771A1 (en) 2011-10-24 2012-10-09 Composition for polishing purposes, polishing method using same, and method for producing substrate

Publications (1)

Publication Number Publication Date
SG11201401309PA true SG11201401309PA (en) 2014-06-27

Family

ID=48167605

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201401309PA SG11201401309PA (en) 2011-10-24 2012-10-09 Composition for polishing purposes, polishing method using same, and method for producing substrate

Country Status (9)

Country Link
US (1) US9579769B2 (en)
JP (1) JP5860057B2 (en)
KR (1) KR101983868B1 (en)
CN (1) CN103890114B (en)
DE (1) DE112012004431T5 (en)
MY (1) MY171840A (en)
SG (1) SG11201401309PA (en)
TW (1) TWI547531B (en)
WO (1) WO2013061771A1 (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6751015B2 (en) * 2013-03-15 2020-09-02 キャボット マイクロエレクトロニクス コーポレイション Aqueous cleaning composition for post-chemical mechanical planarization of copper
JP6360311B2 (en) * 2014-01-21 2018-07-18 株式会社フジミインコーポレーテッド Polishing composition and method for producing the same
JP6389629B2 (en) * 2014-03-31 2018-09-12 ニッタ・ハース株式会社 Polishing composition
JP6389630B2 (en) * 2014-03-31 2018-09-12 ニッタ・ハース株式会社 Polishing composition
JP6185432B2 (en) * 2014-06-24 2017-08-23 株式会社フジミインコーポレーテッド Silicon wafer polishing composition
JP6435689B2 (en) * 2014-07-25 2018-12-12 Agc株式会社 Abrasive, polishing method, and additive liquid for polishing
CN104130717B (en) * 2014-08-07 2016-06-08 佳明新材料科技有限公司 A kind of solar silicon wafers lapping liquid formula
EP3261114B1 (en) * 2015-02-19 2021-01-13 Fujimi Incorporated Composition for silicon wafer polishing and polishing method
CN107735478A (en) * 2015-06-26 2018-02-23 福吉米株式会社 Composition for polishing
JP6960336B2 (en) * 2015-10-23 2021-11-05 ニッタ・デュポン株式会社 Polishing composition
SG11201803362VA (en) * 2015-10-23 2018-05-30 Nitta Haas Inc Polishing composition
JP6348927B2 (en) * 2016-04-27 2018-06-27 株式会社フジミインコーポレーテッド Silicon wafer polishing composition
JP6678076B2 (en) * 2016-06-30 2020-04-08 花王株式会社 Polishing liquid composition for silicon wafer
KR102515815B1 (en) * 2016-11-09 2023-03-30 가부시키가이샤 후지미인코퍼레이티드 Polishing composition and silicon wafer polishing method
US20200010727A1 (en) * 2017-02-20 2020-01-09 Fujimi Incorporated Intermediate polishing composition for silicon substrate and polishing composition set for silicon substrate
US10961487B2 (en) 2017-11-30 2021-03-30 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device cleaning solution, method of use, and method of manufacture
KR102544607B1 (en) * 2017-11-30 2023-06-19 솔브레인 주식회사 Chemical-mechanical polishing slurry composition and method for manufacturing semiconductor by using the same
JP7138432B2 (en) * 2017-12-26 2022-09-16 花王株式会社 Silicon wafer manufacturing method
JP7141837B2 (en) * 2018-03-23 2022-09-26 株式会社フジミインコーポレーテッド Polishing composition, method for producing polishing composition, polishing method, and method for producing semiconductor substrate
CN113195657A (en) * 2018-12-12 2021-07-30 巴斯夫欧洲公司 Chemical mechanical polishing of copper and ruthenium containing substrates
CN110054995A (en) * 2019-06-05 2019-07-26 连云港众成磨料有限公司 A kind of grinding-material handling semiconductor element electronic chip surface removal amount
JP7477964B2 (en) * 2019-12-13 2024-05-02 インテグリス・インコーポレーテッド Chemical mechanical polishing composition and chemical mechanical polishing method using the same

Family Cites Families (20)

* Cited by examiner, † Cited by third party
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JP2001015461A (en) 1999-06-29 2001-01-19 Toshiba Corp Polishing solution and polishing method
US6685757B2 (en) 2002-02-21 2004-02-03 Rodel Holdings, Inc. Polishing composition
JP2004128069A (en) 2002-09-30 2004-04-22 Fujimi Inc Grinder composition and grinding method using it
JP4212861B2 (en) 2002-09-30 2009-01-21 株式会社フジミインコーポレーテッド Polishing composition and silicon wafer polishing method using the same, and rinsing composition and silicon wafer rinsing method using the same
JP4593064B2 (en) * 2002-09-30 2010-12-08 株式会社フジミインコーポレーテッド Polishing composition and polishing method using the same
JP2005158867A (en) 2003-11-21 2005-06-16 Jsr Corp Set for adjusting water-based dispersing element for chemical-mechanical polishing
WO2006009160A1 (en) * 2004-07-23 2006-01-26 Hitachi Chemical Co., Ltd. Cmp polishing agent and method for polishing substrate
JP4808394B2 (en) * 2004-10-29 2011-11-02 株式会社フジミインコーポレーテッド Polishing composition
JP2007103515A (en) * 2005-09-30 2007-04-19 Fujimi Inc Polishing method
CN101291778B (en) * 2005-10-19 2012-06-20 日立化成工业株式会社 Cerium oxide slurry, cerium oxide polishing slurry and method for polishing substrate using the same
JP5204960B2 (en) 2006-08-24 2013-06-05 株式会社フジミインコーポレーテッド Polishing composition and polishing method
KR100725803B1 (en) * 2006-12-05 2007-06-08 제일모직주식회사 Slurry compositions for polishing silicone wafer finally and methods for polishing silicone wafer finally by using the same
US20100112728A1 (en) * 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
EP2237311A4 (en) 2008-02-01 2011-11-30 Fujimi Inc Polishing composition and polishing method using the same
JP5297695B2 (en) * 2008-05-30 2013-09-25 Sumco Techxiv株式会社 Slurry supply device and semiconductor wafer polishing method using the same
WO2009154164A1 (en) 2008-06-18 2009-12-23 株式会社 フジミインコーポレーテッド Polishing composition and polishing method using the same
JP5255343B2 (en) * 2008-06-27 2013-08-07 株式会社フジミインコーポレーテッド Polishing composition and polishing method using the same
JP5474400B2 (en) * 2008-07-03 2014-04-16 株式会社フジミインコーポレーテッド Semiconductor wetting agent, polishing composition and polishing method using the same
JP5362319B2 (en) 2008-10-21 2013-12-11 花王株式会社 Polishing liquid composition
JP5413456B2 (en) 2009-04-20 2014-02-12 日立化成株式会社 Polishing liquid for semiconductor substrate and method for polishing semiconductor substrate

Also Published As

Publication number Publication date
MY171840A (en) 2019-11-04
US20140302752A1 (en) 2014-10-09
KR101983868B1 (en) 2019-05-29
CN103890114A (en) 2014-06-25
US9579769B2 (en) 2017-02-28
WO2013061771A1 (en) 2013-05-02
DE112012004431T5 (en) 2014-07-10
TWI547531B (en) 2016-09-01
CN103890114B (en) 2015-08-26
JP5860057B2 (en) 2016-02-16
JPWO2013061771A1 (en) 2015-04-02
KR20140080543A (en) 2014-06-30
TW201333131A (en) 2013-08-16

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